UNISONIC TECHNOLOGIES CO.

, LTD
5N50 Power MOSFET
www.unisonic.com.tw 1 of 6
Copyright 2012 Unisonic Technologies Co., Ltd QW-R502-476.G
5A, 500V N-CHANNEL
POWER MOSFET
DESCRI PTI ON
The UTC 5N50 is an N-channel power MOSFET adopting
UTCs advanced technology to provide customers with DMOS,
planar stripe technology. This technology is designed to meet the
requirements of the minimum on-state resistance and perfect
switching performance. It also can withstand high energy pulse in
the avalanche and communication mode.
The UTC 5N50 can be used in applications, such as active
power factor correction, high efficiency switched mode power
supplies, electronic lamp ballasts based on half bridge topology.
FEATURES
* R
DS(ON)
= 1.4 @V
GS
= 10 V
* 100% avalanche tested
* High switching speed
SYMBOL
1.Gate
3.Source
2.Drain

1
TO-252
TO-262
1
TO-220F
1
1
TO-220F1

ORDERI NG I NFORMATI ON
Ordering Number
Package
Pin Assignment
Packing
Lead Free Halogen Free 1 2 3
5N50L-TF3-T 5N50G-TF3-T TO-220F G D S Tube
5N50L-TF1-T 5N50G-TF1-T TO-220F1 G D S Tube
5N50L-T2Q-T 5N50G-T2Q-T TO-262 G D S Tube
5N50L-TN3-R 5N50G-TN3-R TO-252 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

5N50 Power MOSFET
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ABSOLUTE MAXI MUM RATI NGS (T
C
=25C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
500 V
Gate-Source Voltage V
GSS
30 V
Drain Current
Continuous I
D
5 A
Pulsed (Note 2) I
DM
20 A
Avalanche Current (Note 2) I
AR
5 A
Avalanche Energy
Single Pulsed (Note 3) E
AS
300 mJ
Repetitive (Note 2) E
AR
7.3 mJ
Peak Diode Recovery dv/dt

(Note 4) dv/dt 4.5 V/ns
Power Dissipation
TO-262
P
D

125 W
TO-220F/TO-220F1 38
TO-252 54 W
Junction Temperature T
J
+150 C
Storage Temperature T
STG
-55~+150 C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 21.5mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25, Starting T
J
= 25C
4. I
SD
5A, di/dt 200A/s, V
DD
BV
DSS
, Starting T
J
= 25C
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient
TO-262/TO-220F
TO-220F
JA

62.5 C/W
TO-252 110 C/W
Junction to Case
TO-262

JC

1 C/W
TO-220F/TO-220F1 3.25 C/W
TO-252 2.13 C/W
5N50 Power MOSFET
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ELECTRI CAL CHARACTERI STI CS (T
C
=25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
I
D
=250A, V
GS
=0V 500 V
Breakdown Voltage Temperature Coefficient BV
DSS
/ T
J
Reference to 25C, I
D
=250A 0.5 V/C
Drain-Source Leakage Current I
DSS

V
DS
=500V, V
GS
=0V 1
A
V
DS
=400V, T
C
=125C 10
Gate- Source Leakage Current
Forward
I
GSS

V
GS
=30V, V
DS
=0V 100 nA
Reverse V
GS
=-30V, V
DS
=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
V
DS
=V
GS
, I
D
=250A 2.0 4.0 V
Static Drain-Source On-State Resistance R
DS(ON)
V
GS
=10V, I
D
=2.5A 1.2 1.4
DYNAMIC PARAMETERS
Input Capacitance C
ISS

V
GS
=0V, V
DS
=25V,
f=1.0MHz
480 625 pF
Output Capacitance C
OSS
80 105 pF
Reverse Transfer Capacitance C
RSS
15 20 pF
SWITCHING PARAMETERS
Total Gate Charge Q
G

V
GS
=10V, V
DS
=400V,
I
D
=5A (Note 1, 2)
18 24 nC
Gate to Source Charge

Q
GS
2.2 nC
Gate to Drain Charge

Q
GD
9.7 nC
Turn-ON Delay Time

t
D(ON)

V
DD
=250V, I
D
=5A,
R
G
=25 (Note 1, 2)
12 35 ns
Rise Time t
R
46 100 ns
Turn-OFF Delay Time

t
D(OFF)
50 110 ns
Fall-Time t
F
48 105 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
I
S
5 A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
20 A
Drain-Source Diode Forward Voltage

V
SD
I
S
=5A, V
GS
=0V 1.4 V
Reverse Recovery Time t
rr
I
S
=5A, V
GS
=0V,
dI
F
/dt=100A/s (Note 1)
263 ns
Reverse Recovery Charge

Q
RR
1.9 C
Note: 1. Pulse Test: Pulse width 300s, Duty cycle 2%
2. Essentially independent of operating temperature
5N50 Power MOSFET
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TEST CI RCUI TS AND WAVEFORMS
50k
300nF
DUT
V
DS
10V
12V
Charge
Q
GS Q
GD
Q
G
V
GS
V
GS
200nF
SameType
asDUT
3mA

Gate Charge Test Circuit Gate Charge Waveforms


Resisti ve Switching Test Circuit Resisti ve Switching Waveforms
10V
t
P
R
G
DUT
L
V
DS
I
D
V
DD
t
P
V
DD
I
AS
BV
DSS
I
D
(t)
V
DS
(t)
Time
E
AS
=
2
1
LI
AS
2 BV
DSS
BV
DSS
-V
DD

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

5N50 Power MOSFET
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TEST CI RCUI TS AND WAVEFORMS(Cont .)
V
DS
+
-
DUT
R
G
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
Same Type
as DUT
I
SD
V
GS
L
Driver


Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
(Driver)
I
SD
(DUT)
V
DS
(DUT)
D=
Gate Pulse Width
Gate Pulse Period
10V
di/dt
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
V
DD
V
SD
Body Diode Forward
Voltage Drop
I
FM
, Body Diode Forward Current


5N50 Power MOSFET
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TYPI CAL CHARACTERI STI CS
DrainCurrentvs.Drain-Source
BreakdownVoltage
D
r
a
i
n

C
u
r
r
e
n
t
,

I
D
(

A
)
Drain-SourceBreakdownVoltage,BV
DSS
(V)
0.5 0
DrainCurrentvs.GateThresholdVoltage
D
r
a
i
n

C
u
r
r
e
n
t
,

I
D
(

A
)
GateThresholdVoltage,V
TH
(V)
1.5 2 3.5 1 3
0
50
100
150
200
250
300
0 100 300 500 600 200
0
50
100
150
200
250
300
400 2.5

D
r
a
i
n

C
u
r
r
e
n
t
,
I
D
(
A
)
D
r
a
i
n

C
u
r
r
e
n
t
,
I
D
(
A
)









UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.