DS 75

DSA 75

Rectifier Diode
Avalanche Diode

VRSM

V(BR)min VRRM

DSI 75
DSAI 75

VRRM = 800-1800 V
IF(RMS) = 160 A
IF(AV)M = 110 A

Anode

Cathode

on stud

on stud

900
1300

800
1200

DS 75-08B
DS 75-12B

DSI 75-08B
DSI 75-12B

1300
1700
1900

1300
1760
1950

1200
1600
1800

DSA 75-12B
DSA 75-16B
DSA 75-18B

DSAI 75-12B
DSAI 75-16B
DSAI 75-18B

DO-203 AB
C
A

DS
DSA

DSI
DSAI

Only for Avalanche Diodes

1/4-28UNF
A = Anode

Symbol

Test Conditions

IF(RMS)
IF(AV)M

TVJ = TVJM
Tcase = 100C; 180 sine

PRSM

DSA(I) types, TVJ = TVJM, tp = 10 ms

IFSM

TVJ = 45C;
VR = 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

1400
1500

A
A

TVJ = TVJM
VR = 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

1250
1310

A
A

TVJ = 45C
VR = 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

9800
9450

A2s
A2s

TVJ = TVJM
VR = 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

7820
7210

A2s
A2s

-40...+180
180
-40...+180

C
C
C

I2t

TVJ
TVJM
Tstg
Md

C = Cathode

Maximum Ratings
160
110

A
A

20

kW

Mounting torque

2.4-4.5
21-40
21

Weight

Nm
lb.in.
g

Symbol

Test Conditions

IR

TVJ = TVJM; VR = VRRM

VF

IF

1.17

VT0
rT

For power-loss calculations only

TVJ = TVJM

0.75
2

V
mW

RthJC
RthJH

DC current
DC current

0.5
0.9

K/W
K/W

dS
dA
a

Creepage distance on surface

Strike distance through air
Max. allowable acceleration

4.05
3.9
100

mm
mm
m/s2

= 150 A; TVJ = 25C

Features
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips

Applications
High power rectifiers
Field supply for DC motors
Power supplies

Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits

Dimensions in mm (1 mm = 0.0394")

Characteristic Values
mA

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions
744

2000 IXYS All rights reserved

1-2

DS 75
DSA 75
200

105

1500

typ.

lim.

50Hz, 80%VRRM

TVJ= 180C
TVJ= 25C

TVJ = 45C

I2t

TVJ = 45C

1000

VR = 0 V

A2s

IFSM

IF 150

DSI 75
DSAI 75

TVJ = 180C
4

100

500

TVJ = 180C

50

0
0.0

0.5

1.0
VF

104

0
10-3

1.5 V

Fig. 1 Forward characteristics

10-2

10-1
t

100

5 6 7 ms
8 910
t

Fig. 3 I2t versus time (1-10 ms)

Fig. 2 Surge overload current

IFSM: crest value, t: duration

200

200
A

RthJA :

IF(AV)M

1 K/W
1.2 K/W

150
PF

DC
180 sin
120
60
30

150

1.6 K/W
2 K/W
3 K/W
4 K/W

100

100

DC
180 sin
120
60
30

50

50

0
0

50

100

150

200
00

50

IF(AV)M

150 C 200

100

40

80

120

Tamb

Fig. 4 Power dissipation versus forward current and ambient temperature

160 C 200
Tcase

Fig. 5 Max. forward current at case

temperature

1.5
K/W

30
60
120
180
DC

ZthJH
1.0

RthJH for various conduction angles d:

d

RthJH (K/W)

DC
180
120
60
30

0.900
1.028
1.085
1.272
1.476

0.5

Constants for ZthJH calculation:

i
0.0
10-3

10-2

10-1

100

Fig. 6 Transient thermal impedance junction to heatsink

2000 IXYS All rights reserved

101

102
t

103

1
2
3
4

Rthi (K/W)

ti (s)

0.0731
0.1234
0.4035
0.3000

0.0015
0.0237
0.4838
1.5

2-2