2SK3797

2006-11-08 1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI)
2SK3797

Switching Regulator Applications


Low drain-source ON resistance: R
DS (ON)
= 0.32 (typ.)
High forward transfer admittance: |Y
fs
| = 7.5 S (typ.)
Low leakage current: I
DSS
= 100 A (V
DS
= 600 V)
Enhancement model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)



Absolute Maximum Ratings (Ta = 25C)
Characteristic Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
600 V
Gate-source voltage V
GSS
30 V
DC (Note 1) I
D
13
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
52
A
Drain power dissipation (Tc = 25C)
P
D
50 W
Single pulse avalanche energy
(Note 2)
E
AS
1033 mJ
Avalanche current I
AR
13 A
Repetitive avalanche energy (Note 3) E
AR
5.0 mJ
Channel temperature T
ch
150 C
Storage temperature range T
stg
-55~150 C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
2.5 C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 C/W
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device.
Note 2: V
DD
= 90 V, T
ch
= 25C (initial), L = 10.7 mH, I
AR
= 13 A, R
G
= 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

1: Gate
2: Drain
3: Source


JEDEC
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
1
3
2
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2SK3797
2006-11-08 2
Electrical Characteristics (Ta = 25C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= 25 V, V
DS
= 0 V 10 A
Gate-source breakdown voltage V
(BR) GSS
I
G
= 10 A, V
DS
= 0 V 30 V
Drain cutoff current I
DSS
V
DS
= 600 V, V
GS
= 0 V 100 A
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 600 V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.0 4.0 V
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
= 6.5 A 0.32 0.43
Forward transfer admittance Y
fs
V
DS
= 10 V, I
D
= 7.0 A 2.1 7.5 S
Input capacitance C
iss
3100
Reverse transfer capacitance C
rss
20
Output capacitance C
oss

V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
270
pF
Rise time t
r
60
Turn-on time t
on
110
Fall time t
f
50
Switching time
Turn-off time t
off








215
ns
Total gate charge Q
g
62
Gate-source charge Q
gs
40
Gate-drain charge Q
gd

V
DD


400 V, V
GS
= 10 V, I
D
= 13 A
22
nC

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
I
DR
13 A
Pulse drain reverse current (Note 1) I
DRP
52 A
Forward voltage (diode) V
DSF
I
DR
= 13 A, V
GS
= 0 V 1.7 V
Reverse recovery time t
rr
1050 ns
Reverse recovery charge Q
rr

I
DR
= 13 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/s 15 C

Marking

R
L
=
30
0 V
10 V
V
GS
V
DD


200 V
I
D
= 6.5 A V
OUT
50
Duty
<
=
1%, t
w
= 10 s
Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3797 Part No. (or abbreviation code)
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2SK3797
2006-11-08 3
5V
7V
5.8V
8V
6.2V
6.6V
10V
5.4V
V
GS
= 4 V




DRAIN CURRENT I
D
(A)

R
DS (ON)
I
D

D
R
A
I
N

S
O
U
R
C
E

O
N

R
E
S
I
S
T
A
N
C
E

R
D
S

(
O
N
)


(

)


DRAINSOURCE VOLTAGE V
DS
(V)

I
D
V
DS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

14
6
4
0
12
2
DRAINSOURCE VOLTAGE V
DS
(V)

I
D
V
DS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

GATESOURCE VOLTAGE V
GS
(V)

I
D
V
GS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

0
0 2 4 6 8 10
10
30
10V
20
25
5
GATESOURCE VOLTAGE V
GS
(V)

V
DS
V
GS
0
6
8
10
0 4 8 12 16 20
8
10
4
2
DRAIN CURRENT I
D
(A)

Y
fs
I
D


F
O
R
W
A
R
D

T
R
A
N
S
I
E
N
T

A
D
M
I
T
T
A
N
C
E

Y
f
s

(
S
)

0.1
0.1 1 10 100
0.3
1
0.1
10
100
0.1 100 10
0 2 4 8
COMMON SOURCE
Tc = 25C
PULSE TEST
10
25
20
10
5
0
30
0 10 30
COMMON SOURCE
Tc = 25C
PULSE TEST
6.2V
7V
6.6V
25 20 5
V
GS
= 4V
8V
15
5V
15
5.8V
5.4V
COMMON SOURCE
Tc = 25
PULSE TEST
I
D
= 13 A
I
D
= 6.5 A
I
D
= 3 A
V
GS
= 10 V
V
GS
= 15 V
COMMON SOURCE
Tc = 25C
PULSE TEST
Tc = 55C
100
25
6
15
D
R
A
I
N

S
O
U
R
C
E

V
O
L
T
A
G
E



V
D
S


(
V
)

COMMON SOURCE
V
DS
= 20 V
PULSE TEST
Tc = 25C Tc = 100C
Tc = 55C
COMMON SOURCE
V
DS
= 20 V
PULSE TEST
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2SK3797
2006-11-08 4





DRAINSOURCE VOLTAGE V
DS
(V)

Capacitance V
DS


C
A
P
A
C
I
T
A
N
C
E


C


(
p
F
)

0.1
10
100
1000
10000
1 10 100


CASE TEMPERATURE Tc (C)

R
DS (ON)
Tc
D
R
A
I
N

S
O
U
R
C
E

O
N

R
E
S
I
S
T
A
N
C
E

R
D
S

(
O
N
)


(

)

160 40 0 40 80 120 80
1
0.8
0.6
0.4
0.2
0

TOTAL GATE CHARGE Q
g
(nC)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS

D
R
A
I
N

S
O
U
R
C
E

V
O
L
T
A
G
E



V
D
S


(
V
)


G
A
T
E

T
H
R
E
S
H
O
L
D

V
O
L
T
A
G
E



V
t
h


(
V
)

CASE TEMPERATURE Tc (C)

V
th
Tc

0
1
2
3
5
80 40 0 40 80 120 160
4

D
R
A
I
N

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N



P
D


(
W
)

CASE TEMPERATURE Tc (C)

P
D
Tc
80
40
0
0 40 80 120 160
20
60
DRAINSOURCE VOLTAGE V
DS
(V)

I
DR
V
DS


D
R
A
I
N

R
E
V
E
R
S
E

C
U
R
R
E
N
T



I
D
R


(
A
)

0
0.1
0.2
1
10
100
0.6 0.8 1.2 0.4 1
0 60 80 100
500
400
0
40 20
8
4
16
20
0
COMMON SOURCE
V
GS
= 10 V
PULSE TEST
I
D
= 13A
6.5
3
COMMON SOURCE
V
DS
= 10 V
I
D
= 1 mA
PULSE TEST
COMMON SOURCE
V
GS
= 0 V
f = 1 MHz
Tc = 25C
C
iss
C
oss
C
rss
COMMON SOURCE
Tc = 25C
PULSE TEST
5
3 1 V
GS
= 0, 1 V
10

G
A
T
E

S
O
U
R
C
E

V
O
L
T
A
G
E


V
G
S


(
V
)

V
DS
V
GS
V
DD
= 100 V
200V
400V
COMMON SOURCE
I
D
= 13 A
Tc = 25C
PULSE TEST
12 300
200
100
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2SK3797
2006-11-08 5






15 V
15 V
TEST CIRCUIT WAVEFORM
I
AR

B
VDSS

V
DD
V
DS
R
G
= 25
V
DD
= 90 V, L = 10.7mH

=
V
DD
B
VDSS
B
VDSS 2
I L
2
1

AS
CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)

E
AS
T
ch


A
V
A
L
A
N
C
H
E

E
N
E
R
G
Y


E
A
S


(
m
J
)

1200
800
400
1000
0
25 50 75 100 125 150

r
th
t
w

PULSE WIDTH t
w
(s)



N
O
R
M
A
L
I
Z
E
D

T
R
A
N
S
I
E
N
T

T
H
E
R
M
A
L

I
M
P
E
D
A
N
C
E


r
t
h

(
t
)
/
R
t
h

(
c
h
-
c
)

0.01
10
0.1
1
10
100 1 10 100 1 10
0.001
DRAINSOURCE VOLTAGE V
DS
(V)


SAFE OPERATING AREA

D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)


0.1
1
1
10
100
10 1000 100

0.01
Duty=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
*SINGLE NONREPETITIVE
PULSE Tc = 25C
CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN TEMPERATURE
DC OPERATION
Tc = 25C
1 ms *
V
DSS
max
I
D
max (CONTINOUS)
I
D
max (PULSED) *
100 s *
T
P
DM
t
Duty = t/T
R
th (ch-c)
= 2.5C/W
600
200
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2SK3797
2006-11-08 6


RESTRICTIONS ON PRODUCT USE
20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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