February 2001

2001 Fairchild Semiconductor Corporation FDD5614P Rev C(W)

FDD5614P
60V P-Channel PowerTrench

MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchilds high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
DC/DC converter
Power management
Load switch
Features
15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V
RDS(ON) = 130 m @ VGS = 4.5 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings TA=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage 20 V
ID Drain Current Continuous (Note 3) 15 A
Pulsed (Note 1a) 45
Power Dissipation for Single Operation (Note 1) 42
(Note 1a) 3.8
PD
(Note 1b) 1.6
W
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +175 C
Thermal Characteristics
RJC
Thermal Resistance, Junction-to-Case (Note 1) 3.5 C/W
RJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 40 C/W
RJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5614P FDD5614P 13 12mm 2500 units
F
D
D
5
6
1
4
P
FDD5614P Rev C(W)
Electrical Characteristics T
A
= 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS Single Pulse Drain-Source
Avalanche Energy
VDD = 30 V, ID = 4.5 A 90 mJ
IAR Maximum Drain-Source Avalanche
Current
4.5 A
Off Characteristics
BVDSS DrainSource Breakdown Voltage VGS = 0 V, ID = 250 A 60 V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 A, Referenced to 25C 49 mV/C
IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 A
IGSSF GateBody Leakage, Forward VGS = 20V, VDS = 0 V 100 nA
IGSSR GateBody Leakage, Reverse VGS = 20 V, VDS = 0 V 100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 1 1.6 3 V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 A, Referenced to 25C 4 mV/C
RDS(on) Static DrainSource
OnResistance
VGS = 10 V, ID = 4.5 A
VGS = 4.5 V, ID = 3.9 A
VGS = 10 V,ID = 4.5 A,TJ=125C
76
99
137
100
130
185
m
ID(on) OnState Drain Current VGS = 10 V, VDS = 5 V 20 A
gFS Forward Transconductance VDS = 5 V, ID = 3 A 8 S
Dynamic Characteristics
Ciss Input Capacitance 759 pF
Coss Output Capacitance 90 pF
Crss Reverse Transfer Capacitance
VDS = 30 V, V GS = 0 V,
f = 1.0 MHz
39 pF
Switching Characteristics (Note 2)
td(on) TurnOn Delay Time 7 14 ns
tr TurnOn Rise Time 10 20 ns
td(off) TurnOff Delay Time 19 34 ns
tf TurnOff Fall Time
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6
12 22 ns
Qg Total Gate Charge 15 24 nC
Qgs GateSource Charge 2.5 nC
Qgd GateDrain Charge
VDS = 30V, ID = 4.5 A,
VGS = 10 V
3.0 nC
DrainSource Diode Characteristics and Maximum Ratings
IS Maximum Continuous DrainSource Diode Forward Current 3.2 A
VSD DrainSource Diode Forward
Voltage
VGS = 0 V, IS = 3.2 A (Note 2) 0.8 1.2 V
F
D
D
5
6
1
4
P
FDD5614P Rev C(W)
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) R
JA
= 40C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
JA
= 96C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
) ON ( DS
D
R
P
F
D
D
5
6
1
4
P
FDD5614P Rev C(W)
Typical Characteristics
0
3
6
9
12
15
0 1 2 3 4 5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
-3.0V
-2.5V
-4.0V
-4.5V
V
GS
= -10V
-3.5V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
0 2 4 6 8 10
-ID, DRAIN CURRENT (A)
R
D
S
(
O
N
)
,

N
O
R
M
A
L
I
Z
E
D
D
R
A
I
N
-
S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E
V
GS
= -3.5V
-4.5V
-5.0V
-4.0V
-10V
-6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
S
(
O
N
)
,

N
O
R
M
A
L
I
Z
E
D

D
R
A
I
N
-
S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
EI
D
= -4.5A
V
GS
= -10V
0
0.1
0.2
0.3
0.4
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
R
D
S
(
O
N
)
,

O
N
-
R
E
S
I
S
T
A
N
C
E

(
O
H
M
)
I
D
= -2.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
1 2 3 4 5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
T
A
= -55
o
C
125
o
C
V
DS
= -5V
25
o
C
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,

R
E
V
E
R
S
E

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
D
D
5
6
1
4
P
FDD5614P Rev C(W)
Typical Characteristics
0
2
4
6
8
10
0 4 8 12 16
Q
g
, GATE CHARGE (nC)
V
G
S
,

G
A
T
E
-
S
O
U
R
C
E

V
O
L
T
A
G
E

(
V
)I
D
= -4.5A
V
DS
= -40V
-20V
-30V
0
200
400
600
800
1000
0 10 20 30 40 50 60
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
A
P
A
C
I
T
A
N
C
E

(
p
F
)C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
DC
10s
1s
100ms
100s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
0.1 1 10 100 1000
t
1
, TIME (sec)
P
(
p
k
)
,

P
E
A
K

T
R
A
N
S
I
E
N
T

P
O
W
E
R

(
W
)
SINGLE PULSE
R
JA
= 96C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r
(
t
)
,

N
O
R
M
A
L
I
Z
E
D

E
F
F
E
C
T
I
V
E

T
R
A
N
S
I
E
N
T

T
H
E
R
M
A
L

R
E
S
I
S
T
A
N
C
E
R
JA
(t) = r(t) + R
JA
R
JA
= 96C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
D
D
5
6
1
4
P
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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