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= |
.
|
\
|
=
(3)
where
0
is the permittivity of free space, C is the
capacitance, A is the area of a capacitor plate and
0
d is
the thickness of the airgap. Since at
equilibrium,
E M
F F = , we have:
2
0
2
0
2
2
) ( 2
x d
AV
kx
dt
x d
m
= +
(4)
This equation can be rearranged into a third-order
polynomial. After solving for x and choosing the stable
root, the pull-in voltage can be expressed as [4]:
A
kd
V
PI
0
3
0
27
8
= (5)
The distance where the pull-in occurs is:
3
0
d
x
PI
= (6)
and the pull-in gap is:
3
2
0
d
d
PI
= (7)
The spring constant is given by:
3
0
2
0
8
27
d
AV
k
PI
= (8)
If the voltage is increased beyond this pull-in voltage,
the resulting electrostatic force will cause the movable
plate to collapse onto the fixed plate and the capacitor
will be short-circuited.
By expanding (3) using a Taylor series approximation
about a minimal distance
0
x we get:
..... ) (
) ( 2
) 1 )( 2 (
) ( 2 ) ( 2
0
3
0
2
0
2
0
2
0
2
0
2
0
0
0
+
=
=
=
x x
x d
AV
x d
AV
x d
AV
F
x x
x x E
(9)
After rearranging the terms:
(
= ... 2 1
) ( 2
0 0
0
2
0 0
2
0
x d
x x
x d
AV
F
E
(10)
Substituting
E
F from (10) in (4), we get:
(
= + ... 2 1
) ( 2
0 0
0
2
0 0
2
0
2
2
x d
x x
x d
AV
kx
dt
x d
m
(11)
After rearrangement:
(
=
|
|
.
|
\
|
+
... 2 1
) ( 2
) (
0 0
0
2
0 0
2
0
3
0 0
2
0
2
2
x d
x
x d
AV
x
x d
AV
k
dt
x d
m
(12)
Thus, the electrostatic attraction force effectively
modifies the spring constant of the movable plate and the
term within parenthesis in the left hand side of (12)
represents the effective spring constant at a specified
voltage. The amount of modification is termed as spring
softening and can be expressed as:
3
0 0
2
0
) ( x d
AV
k
soft
=
(13)
Consequently, the resonant frequency of the structure
is shifted from:
m
k
res
= (14)
to
( )
soft res
k k
m
=
1
(15)
For a microphone, the resonant frequency of the
microphone structure must be well above the upper cut-
off frequency of the desired audio frequency range to
avoid audio distortion. Thus the chosen bias voltage must
not soften the spring constant of the diaphragm so much
that the altered fundamental resonant frequency of the
structure falls below the upper cut-off frequency of the
desired audio frequency range. The chosen bias voltage
must also ensure that the deflection of the diaphragm due
to the combined effects of the electrostatic and the
acoustical pressure is within the non-pull-in limit of the
structure.
4. Fully Clamped Square Diaphragm
Analysis
Due to the presence of residual stress and a
significantly large deflection of the diaphragm compared
to its thickness, the developed strain energy in the middle
of the diaphragm causes a stretch of the middle surface.
Consequently, the deflection of the middle surface no
longer depends solely on the external forces and the
rigidity of the diaphragm increases with the deflection.
[7]. This deflection dependent nonlinear behavior of a
fully clamped diaphragm is known as spring hardening
and a large deflection model of analysis must be applied
Proceedings of the International Conference on MEMS, NANO and Smart Systems (ICMENS03)
0-7695-1947-4/03 $17.00 2003 IEEE
4
to determine the deflection. Thus, the analytical solution
for diaphragm deflection from electrostatic forces must
account for this spring hardening effect in addition to the
nonlinear and non-uniform electrostatic forces.
Following the large deflection model, for a fully
clamped square diaphragm with built in residual stress,
the deflection of the midpoint of the diaphragm under a
uniform pressure load P can be expressed as [11]:
3
0
4
2 0
2
1 0
) ( ) ( h
a
tE
v C h
a
t
C h P + =
(16)
where P is the applied uniform pressure, t, the diaphragm
thickness, E, the Youngs modulus, v, the in-plane
Poissons ratio, , the residual stress, a, the half of the
diaphragm side length and
0
h , the deflection of the
diaphragm midpoint. The quantities, C
1
and C
2
are
numerical parameters and their values are given by:
) 1 /( ) 271 . 0 1 ( 994 . 1
and , 45 . 3
2
1
v v C
C
=
=
(17)
The deflection of the diaphragm from mid-side to mid-
side can be calculated from midpoint deflection as:
|
.
|
\
|
|
|
.
|
\
|
+ =
a
x
a
x
h x h
2
cos 401 . 0 1 ) 0 , (
2
2
0
(18)
and diagonal deflection can be calculated as:
|
.
|
\
|
|
|
.
|
\
|
+ + = =
a
x
a
x
a
x
h y x h
2
cos
1611 . 1
2
401 . 0 1 ) (
2
4
4
2
2
0
(19)
In [8], it was shown that for clamped diaphragms, a
fringe field correction is required for the Youngs
modulus as given by:
) 1 /(
2
v E E = (20)
where E
\
|
+ (21)
Rearranging and neglecting the time dependent term:
kx x
d
AV
d
AV
= +
3
0
2
0
2
0
2
0
2
(22)
The left hand side of (22) describes an approximate,
uniform, linear electrostatic force that can be used to
evaluate the pull-in voltage.
From (22), the effective linearized uniform
electrostatic pressure on the diaphragm due to an applied
bias voltage can be evaluated as:
|
|
.
|
\
|
+ =
3
0
2
0
2
0
2
1
d
x
d
V P
eff
(23)
Substituting x in (23) by the pull-in deflection from (6),
the effective pull-in pressure
PI eff
P
(24)
Next, substituting the pull-in deflection
0
3
1
d for
0
h ,
replacing ) (
0
h P by
PI eff
P
in (16), we obtain:
Proceedings of the International Conference on MEMS, NANO and Smart Systems (ICMENS03)
0-7695-1947-4/03 $17.00 2003 IEEE
5
3
0
4
2
0
2
1
2
0
2
0
3
) (
3 6
5
|
.
|
\
|
+ |
.
|
\
|
=
d
a
E t
v C
d
a
t
C
d
V
PI
(25)
The above equation can now be solved for the pull-in
voltage
PI
V as:
(
(
|
.
|
\
|
+ |
.
|
\
|
=
3
0
4
2
0
2
1
0
2
0
3
) (
3 5
6 d
a
E t
v C
d
a
t
C
d
V
PI
(26)
Equation (26) provides the desired approximation of the
pull-in voltage for a clamped square diaphragm.
6. Illustrative Example
To illustrate the above model of pull-in voltage
evaluation, a microphone structure having device
parameters as given in Table I has been used.
The left hand side of (17) is plotted in figure 4 for a
voltage range of 11 to 17.45 volts. Superimposed in the
figure is a plot of right hand side of (17) using 226.4 N/m
for the spring constant k . At a distance of one-third of
the airgap (1.167 m), the kx graph intersects the 17.45
volts constant voltage curve and thus gives the voltage
where the pull-in occurs.
The intersection of the kx graph with the 12 volts
constant voltage curve shows the stable equilibrium point
at that voltage. The diaphragm deflection at that point is
about 0.41 m. The pull-in voltage calculated using (26)
is 17.453 volts and this is in close agreement with Figure
4. The value of pull-in voltage calculated using equation
(26) is about 2.45 volts higher than that is calculated
using (5).
The midpoint to midpoint deflection profiles of the
diaphragm for different bias voltages is calculated using
(16) to (20) and (23) and are plotted in Figure 5.
Results from 3-D finite element analysis and the
developed analytical model for the diaphragm deflection
for different bias voltages are plotted in Figure 6. The
FEA results show that the pull-in occurs at 17.85 volts
and this is in close agreement with the analytical value.
Figure 7 shows the finite element analysis result of the
diaphragm collapse. The derivations carried out for a
fully clamped square diaphragm, can be extended to any
rectangular or circular diaphragm case by applying
appropriate load -deflection criteria and boundary
conditions.
Table 1. Device Parameters
Parameter Value
Diaphragm thickness, t 0.8 m
Diaphragm side length, a 1.2 mm
Airgap thickness, d
0 3.5 m
Youngs modulus, E 169 GPa
Poissons ratio, v 0.28
Residual stress - 20 MPa.
Figure 4. Electrostatic and elastic forces versus
displacement using parameters given in Table 1
Figure 5. The midpoint to midpoint deflection profiles
of the diaphragm for different bias voltages
Proceedings of the International Conference on MEMS, NANO and Smart Systems (ICMENS03)
0-7695-1947-4/03 $17.00 2003 IEEE
6
Figure 6. Comparison of diaphragm deflection
calculated using the analytical model and FEA
analysis for different bias voltages.
Figure 7. Finite element analysis results showing
diaphragm collapse due to pull-in phenomenon
7. Conclusions
An analytical method is presented to determine the
pull-in voltage of a MEMS capacitive microphone having
a clamped square diaphragm. The method incorporates
the nonlinear and non-uniform nature of the electrostatic
force associated with a clamped diaphragm deformation.
The spring hardening effect associated with deflection of
a clamped diaphragm with built-in residual stress has also
been addressed. The resulting analytical model provides a
more accurate approximation of the pull-in voltage. The
results from the analytical model are in close agreement
with finite element analysis results. The method can be
extended to determine the pull-in voltage for other
microstructures utilizing electrostatic actuation if the
airgap thickness is very small compared to lateral
dimensions.
8. Acknowledgements
This research has been made possible by the interest
and support provided by the Gennum Corporation of
Burlington, Ontario. The authors greatly acknowledge
the additional generous support of the following partners:
Canadian Microelectronics Corporation (CMC),
MICRONET, Natural Sciences and Engineering Research
Council of Canada (NSERC) and the IntelliSense
Corporation, Wilmington, MA, USA.
9. References
[1] C. Gibbons and R. N. Miles, Design of A Biomimetic
Directional Microphone Diaphragm, Proc. of IMECE Intern.l
Mechanical Engineering Congress and Exposition, November
5-10, 2000. Orlando, Florida, 2000, pp. 1-7.
[2] P. C. Hsu, C. H. Mastrangelo and K. D. Wise, A High
Density Polysilicon Diaphragm Condenser Microphone, in
Tech. Digest of. IEEE 11th International Conference on Micro
Electro Mechanical Systems (MEMS), Heidelberg, Germany,
1998, pp. 580-585.
[3] M. Pederson, W. Olthuis and P. Bergveld, High-
Performance Condenser Microphone with Fully Integrated
CMOS Amplifier and DC-DC Voltage Converter, Journal of
Microelectromechanical Systems, Vol. 7, No. 4, pp. 387-394,
Dec. 1998.
[4] S. D. Senturia, Microsystems Design, Kluwer
Academic Publishers, 2000.
[5] J. Pons-Nin, A. Rodriguez and L. M. Castaner, Voltage
and Pull-in in Current Drive of electrostatic Actuators", Journal
of Microelectromechanical Systems, Vol. 11, No. 3, pp. 196-
205, Jun. 2002.
[6] R. Puers and D. Lapadatu, Electrostatic Forces and Their
Effects on Capacitive Mechanical Sensors, Sensors and
Actuators A, Vol. 56, 1996, pp. 203-210.
[7] S. Timoshenko and S. Woinowsky-Krieger, Theory of
Plates and Shells, McGraw-Hill Book Company New York,
1959, pp. 397-428.
[8] P. M. Osterberg and S. D. Senturia, M-TEST: A Test
Chip for MEMS Material Property Measurement Using
Electrostatically Actuated Test Structures, Journal of
Microelectromechanical Systems, Vol. 6, No. 2, pp. 107-118,
June. 1997.
[9] Y. He, J. Machete, C. Gallegos and F. Maser, Accurate
Fully-Coupled Natural Frequency Shift of MEMS Actuators
Due to Voltage Bias and Other External Forces, in Tech.
Digest of. IEEE 12th International Conference on Micro Electro
Mechanical Systems (MEMS), Orlando, Florida, 1999, pp.321-
325.
[10] J. Bergqvist and J. Gobet, Capacitive Microphone with a
Surface Micromachined Backplate Using Electroplating
Technology, Journal of Microelectromechanical Systems, Vol.
3, No. 2, pp. 387-394, Jun. 1994.
[11] D. Maier-Schneider, J. Maibach and E. Obermeier, A
New Analytical Solution for the Load-Deflection of Square
Membranes", Journal of Microelectromechanical Systems, Vol.
4, No. 4, pp. 238-241, Dec. 1995.
Proceedings of the International Conference on MEMS, NANO and Smart Systems (ICMENS03)
0-7695-1947-4/03 $17.00 2003 IEEE