BSS 84 P

SIPMOS Small-Signal-Transistor
Feature

Product Summary

P-Channel
Enhancement mode
Logic Level
Avalanche rated
dv/dt rated

VDS
RDS(on)
ID

-60

-0.17

PG-SOT-23
3

Qualified according to AEC Q101

Halogen-free according to IEC61249-2-21

Type

Package

Tape and Reel

BSS 84 P

PG-SOT-23

H6327:3000pcs/r. YBs

BSS 84 P

PG-SOT-23H6433:10000pcs/r. YBs

VPS05161

Drain
pin 3

Marking

Gate
pin1
Source
pin 2

Maximum Ratings, at TA = 25 C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

Value

TA=25C

-0.17

TA=70C

-0.14

I D puls

Pulsed drain current

Unit

-0.68

TA=25C

mJ

EAS

2.6

Avalanche energy, periodic limited by Tjmax

EAR

0.036

Reverse diode dv/dt

dv/dt

-6

Gate source voltage

VGS

20

Power dissipation

Ptot

0.36

-55... +150

Avalanche energy, single pulse

ID=-0.17 A , VDD=-25V, RGS=25W

kV/s

IS=-0.17A, VDS=-48V, di/dt=-200A/s, Tjmax=150C

TA=25C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Rev 2.6

Page 1

T j , Tstg

55/150/56

2011-06-01

BSS 84 P
Thermal Characteristics
Symbol

Parameter

Values

Unit

min.

typ.

max.

200

@ min. footprint

350

@ 6 cm 2 cooling area 1)

300

Characteristics
Thermal resistance, junction - soldering point

RthJS

K/W

(Pin 3)
SMD version, device on PCB:

RthJA

Electrical Characteristics, at TA = 25 C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

V(BR)DSS

-60

VGS(th)

-1

-1.5

-2

Static Characteristics
Drain-source breakdown voltage

VGS=0, ID =-250A

Gate threshold voltage, VGS = VDS

ID=-20A

Zero gate voltage drain current

I DSS

VDS=-60V, VGS=0, TA =25C

-0.1

-1

VDS=-60V, VGS=0, TA =125C

-10

-100

I GSS

-10

-100

nA

RDS(on)

12

RDS(on)

5.8

Gate-source leakage current

VGS=-20V, VDS=0

Drain-source on-state resistance

VGS=-4.5V, ID=-0.14A

Drain-source on-state resistance

VGS=-10V, ID=-0.17A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.6

Page 2

2011-07-11

BSS 84 P
Electrical Characteristics, at TA = 25 C, unless otherwise specified
Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

0.065

0.13

S
pF

Dynamic Characteristics
Transconductance

gfs

VDS2*ID*RDS(on)max ,
ID=-0.14A

Input capacitance

Ciss

VGS=0, VDS=-25V,

15

19

Output capacitance

Coss

f=1MHz

Reverse transfer capacitance

Crss

Turn-on delay time

td(on)

VDD=-30V, VGS=-4.5V,

6.7

10

Rise time

tr

ID=-0.14A, RG=25W

16.2

24.3

Turn-off delay time

td(off)

8.6

12.9

Fall time

tf

20.5

30.8

0.25

0.37

0.3

0.45

1.5

V(plateau) VDD=-48V, ID=-0.17A

-3.42

IS

-0.17 A

-0.68

ns

Gate Charge Characteristics

Gate to source charge

Qgs

Gate to drain charge

Qgd

Gate charge total

Qg

VDD=-48V, ID=-0.17A

VDD=-48V, ID=-0.17A,

nC

VGS=0 to -10V

Gate plateau voltage

Reverse Diode
Inverse diode continuous

TA=25C

forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage

VSD

VGS=0, IF=-0.17A

-0.93

Reverse recovery time

trr

VR=-30V, IF=lS,

23

34

ns

Reverse recovery charge

Qrr

diF/dt=100A/s

10

15

nC

Rev 2.6

Page 3

-1.24 V

2011-07-11

BSS 84 P
1 Power dissipation

2 Drain current

Ptot = f (TA)

ID = f (TA)

0.38

parameter: VGS 10 V

BSS 84 P

BSS 84 P

-0.18

W
A
0.32
-0.14
-0.12

0.24

ID

P tot

0.28

-0.1

0.2

-0.08

0.16
0.12

-0.06

0.08

-0.04

0.04

-0.02

0
0

20

40

60

80

100

120

0
0

160

20

40

60

80

100

120

TA

3 Safe operating area

4 Transient thermal impedance

ID = f ( VDS )

ZthJA = f (tp )

parameter : D = 0 , TA = 25 C

parameter : D = tp /T

1 BSS 84 P

-10

10 3

10 2

Z thJA

tp = 170.0s

/I D

-10

BSS 84 P

K/W

ID

-10

160

TA

-1

RD

o
S(

VD

1 ms

10 1

n)

D = 0.50
10 ms

0.20
0.10
-10 -2

10 0

0.05
single pulse

0.02

DC

-10 -3 -1
-10

-10

-10

0.01

-10

10

tp

VDS
Rev 2.6

10 -1 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10

Page 4

2011-07-11

BSS 84 P
5 Typ. output characteristic

6 Typ. drain-source on resistance

ID = f (VDS)

RDS(on) = f (ID)

parameter: Tj = 25 C

parameter: VGS ; Tj = 25 C

BSS 84 P
Ptot = 0.36W

26

j i

W
h

VGS [V]
g a
-2.5

-0.32
f

ID

-0.28

-0.24

-3.5

-4.0

-4.5

-5.0
-5.5

-6.0

-6.5

-7.0

-8.0

-0.12

18
16
14
12
10

h
i

-10.0

j
k

4 V
GS [V] =

-0.04

-0.5

-1

-1.5 -2

-2.5

-3

-3.5

-4

0
0

-5

a
b
c
d
e
f
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0

g
h
i
j
-5.5 -6.0 -6.5 -7.0

ID

7 Typ. transfer characteristics

8 Typ. forward transconductance

ID = f ( VGS ); |VDS | 2 x |ID | x RDS(on)max

gfs = f(ID)
parameter: Tj = 25 C

0.4

0.16

0.3

0.12

g fs

- ID

parameter: Tj = 25 C

0.25

0.1

0.2

0.08

0.15

0.06

0.1

0.04

0.05

0.02

0
0

0.04

0.08

0.12

0.16

0.22

-ID

- VGS

Rev 2.6

k
l
-8.0 -10.0

-0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 A -0.38

VDS

0
0

20

-0.08

0
0

-3.0

d g

-0.2
-0.16

BSS 84 P

22

R DS(on)

-0.4

Page 5

2011-07-11

BSS 84 P
9 Drain-source on-state resistance

10 Typ. gate threshold voltage

RDS(on) = f (Tj )

VGS(th) = f (Tj )

parameter : ID = -0.17 A, VGS = -10 V

parameter: VGS = VDS

21

BSS 84 P

2.4
V

18

98%

16

- V GS(th)

R DS(on)

14
12

1.8
1.6
1.4

10

98%
1.2

0.8

0.6

-20

20

60

2%

typ

0
-60

typ.

100

0.4
-60

180

-20

20

60

100

TA

160

TA

11 Typ. capacitances

12 Forward character. of reverse diode

C = f (VDS)

IF = f (VSD)

parameter: VGS =0, f=1 MHz

parameter: Tj , tp = 80 s

10

-10 0

BSS 84 P

A
pF
Ciss
C

IF

-10 -1

Coss

10

-10 -2
Tj = 25 C typ

Crss

Tj = 150 C typ
Tj = 25 C (98%)
Tj = 150 C (98%)
10

10

20

-0.4

-0.8

-1.2

-1.6

-2

-2.4 V

-3

VSD

- VDS

Rev 2.6

-10 -3
0

Page 6

2011-07-11

BSS 84 P
13 Typ. avalanche energy

14 Typ. gate charge

EAS = f (TA), parameter:

VGS = f (QGate )

ID = -0.17 A , VDD = -25 V, RGS = 25 W

parameter: ID = -0.17 A pulsed; Tj = 25 C

-16

BSS 84 P

mJ

V GS

E AS

-12
2

1.5

-10

0,2 VDS max

0,8 VDS max

-8

-6
1
-4
0.5
-2

0
25

45

65

85

105

125

165

0
0

0.2

0.4

0.6

0.8

1.2 nC

1.5

QGate

TA

15 Drain-source breakdown voltage

V(BR)DSS = f (TA)
BSS 84 P

-72

V (BR)DSS

-68
-66
-64
-62
-60
-58
-56
-54
-60

-20

20

60

100

180

TA

Rev 2.6

Page 7

2011-07-11

BSS 84 P

Published by
Infineon Technologies AG
81726 Munich, Germany
2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev 2.6

Page 7

2011-07-11