Type 2N3499

Geometry 5620
Polarity NPN
Qual Level: JAN - JANTXV
Dat a Sheet No. 2N3499
Generic Part Number:
2N3499
REF: MIL-PRF-19500/366
Features:
General-purpose silicon transistor
for switching and amplifier appli-
cations.
Housed in TO-39 case.
Also available in chip form using
the 5620 chip geometry.
The Min and Max limits shown are
per MIL-PRF-19500/366 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter voltage V
CEO
100 V
Collector-Base Voltage V
CBO
100 V
Emitter-Base voltage V
EBO
6.0 V
Collector Current, Continuous I
C
500 mA
Power Dissipation, T
A
= 25
o
C 5.0 mW
Derate above 25
o
C 28.8 mW/
o
C
Operating Junction Temperature T
J
-65 to +200
o
C
Storage Temperature T
STG
-65 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
D
TO-39
Dat a Sheet No. 2N3499
OFF Characteristics Symbol Min Max Unit
Collector-Base Breakdown Voltage
I
C
= 10 A
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 A
Collector-Base Cutoff Current
V
CB
= 50 V
Emitter-Base Cutoff Current
V
EB
= 4 V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
100 --- V
V
(BR)CEO
100 --- V
V V
(BR)EBO
6.0 ---
I
CBO
--- 50 nA
I
EBO
--- 25 nA
ON Characteristics Symbol Min Max Unit
Forward Current Transfer Ratio
I
C
= 100 A, V
CE
= 10 V (pulsed) h
FE1
35 --- ---
I
C
= 1.0 mA, V
CE
= 10 V (pulsed) h
FE2
50 --- ---
I
C
= 10 mA, V
CE
= 10 V (pulsed) h
FE3
75 --- ---
I
C
= 150 mA, V
CE
= 10 V (pulsed) h
FE4
100 300 ---
I
C
= 300 mA, V
CE
= 10 V (pulsed) h
FE6
20 --- ---
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA V
BE(sat)1
--- 0.8 V dc
I
C
= 300 mA, I
B
= 300 mA V
BE(sat)3
--- 1.4 V dc
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA V
CE(sat)1
--- 0.2 V dc
I
C
= 300 mA, I
B
= 30 mA V
CE(sat)3
--- 0.6 V dc
Small Signal Characteristics Symbol Min Max Unit
Short Circuit Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V, f = 1 kHz
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Noise Figure
V
CE
= 10 V, I
C
= 0.5 mA, Rg = 1 kOhm, 1 kHz
Noise Figure
V
CE
= 10 V, I
C
= 0.5 mA, Rg = 1 kOhm, 1 kHz
pF
C
IBO
--- 80 pF
C
OBO
--- 10
|h
FE
| 1.5 8.0 ---
NF --- 16 dB
NF --- 6.0 dB
AC h
FE
75 375 ---
Switching Characteristics Symbol Min Max Unit
Saturated Turn On Switching time to 90%
I
C
= 150 mA, I
B1
= 15 mA, V
EB
= 2 V
Saturated Turn Off Switching time to 10%
I
C
= 150 mA, I
B2
= -I
B1
= 15 mA
t
ON
--- 115 ns
1150 ns t
OFF
---