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NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 600 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 C
Symbol Characteristic Max Units
2N4400 *MMBT4400
P
D
Total Device Dissipation
Derate above 25C
625
5.0
350
2.8
mW
mW/C
RJC
Thermal Resistance, Junction to Case 83.3 C/W
RJA
Thermal Resistance, Junction to Ambient 200 357 C/W
C
B
E
SOT-23
Mark: 83
MMBT4400 2N4400
C
B
E
TO-92
2001 Fairchild Semiconductor Corporation
2N4400/MMBT4400, Rev A
2
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0 mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 100 A, I
E
= 0 60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 100 A, I
C
= 0 6.0 V
I
CEX
Collector Cutoff Current V
CE
= 35 V, V
EB
= 0.4 V 0.1 A
I
BL
Emitter Cutoff Current V
CE
= 35 V, V
EB
= 0.4 V 0.1 A
ON CHARACTERISTICS*
h
FE
DC Current Gain V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 1.0 V, I
C
= 150 mA
V
CE
= 2.0 V, I
C
= 500 mA
20
40
50
20
150
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 150 mA, I
B
=15 mA
I
C
= 500 mA, I
B
= 50 mA
0.40
0.75
V
V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= 150 mA, I
B
=15 mA
I
C
= 500 mA, I
B
= 50 mA
0.75 0.95
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance V
CB
= 5.0 V, f = 140 kHz 6.5 pF
C
ib
Input Capacitance V
EB
= 0.5 V, f = 140 kHz 30 pF
h
fe
Small-Signal Current Gain I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
2.0
h
fe
Small-Signal Current Gain V
CE
= 10 V, I
C
= 1.0 mA, 20 250
h
ie
Input Impedance f = 1.0 kHz 0.5 7.5 K
h
re
Voltage Feedback Ratio 0.1 8.0 x 10
-4
h
oe
Output Admittance 1.0 30 mhos
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
t
d
Delay Time V
CC
= 30 V, I
C
= 150 mA, 15 ns
t
r
Rise Time I
B1
= 15 mA ,V
EB
= 2 V
t
s
Storage Time V
CC
= 30 V, I
C
= 150 mA 225 ns
t
f
Fall Time I
B1
= I
B2
= 15 mA 30 ns
20 ns
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
Y
P
I
C
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
I
N
C
F
E
125 C
25 C
- 40 C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
1 10 100 500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
C
E
S
A
T
25 C
C
= 10
125 C
- 40 C
Base-Emitter Saturation
Voltage vs Collector Current
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
B
E
S
A
T
C
= 10
25 C
125 C
- 40 C
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
B
E
(
O
N
)
C
V = 5V
CE
25 C
125 C
- 40 C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
n
A
)
A
V = 40V
CB
C
B
O
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