TK12A50D

2008-09-10 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
TK12A50D

Switching Regulator Applications


Low drain-source ON-resistance: R
DS (ON)
= 0.45 (typ.)
High forward transfer admittance: |Y
fs
| = 6.0 S (typ.)
Low leakage current: I
DSS
= 10 A (V
DS
= 500 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)



Absolute Maximum Ratings (Ta = 25C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
500 V
Gate-source voltage V
GSS
30 V
DC (Note 1) I
D
12
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
48
A
Drain power dissipation (Tc = 25C)
P
D
45 W
Single pulse avalanche energy
(Note 2)
E
AS
364 mJ
Avalanche current I
AR
12 A
Repetitive avalanche energy (Note 3) E
AR
4.5 mJ
Channel temperature T
ch
150 C
Storage temperature range T
stg
-55 to 150 C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
2.78 C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V
DD
= 90 V, T
ch
= 25C(initial), L = 4.3 mH, R
G
= 25 , I
AR
= 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm
1: Gate
2: Drain
3: Source


JEDEC
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
1
3
2
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TK12A50D
2008-09-10 2
Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= 30 V, V
DS
= 0 V 1 A
Drain cut-off current I
DSS
V
DS
= 500 V, V
GS
= 0 V 10 A
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 500 V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.0 4.0 V
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
= 6 A 0.45 0.52
Forward transfer admittance Y
fs
V
DS
= 10 V, I
D
= 6 A 1.5 6.0 S
Input capacitance C
iss
1350
Reverse transfer capacitance C
rss
6
Output capacitance C
oss

V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
135
pF
Rise time t
r
22
Turn-on time t
on
55
Fall time t
f
15
Switching time
Turn-off time t
off








100
ns
Total gate charge Q
g
25
Gate-source charge Q
gs
16
Gate-drain charge Q
gd

V
DD
400 V, V
GS
= 10 V, I
D
= 12 A
9
nC

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
I
DR
12 A
Pulse drain reverse current (Note 1) I
DRP
48 A
Forward voltage (diode) V
DSF
I
DR
= 12 A, V
GS
= 0 V 1.7 V
Reverse recovery time t
rr
1300 ns
Reverse recovery charge Q
rr

I
DR
= 12 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/s 12 C

Marking


R
L
= 33
0 V
10 V
V
GS
V
DD
200 V
I
D
= 6 A V
OUT
50
Duty 1%, t
w
= 10 s
Lot No.
K12A50D Part No. (or abbreviation code)
A line indicates
Lead(Pb)-Fee Finish.
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TK12A50D
2008-09-10 3
0.1
0.1 1 10 100
1
10
V
GS
= 10 V15 V
0.1
10
100
0.1 1 100
25
100
Tc = 55C
1
10

D
R
A
I
N
-
S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E


R
D
S

(
O
N
)


(

)

COMMON SOURCE
Tc = 25C
PULSE TEST
DRAIN CURRENT I
D
(A)
10
6
4
0
0 2 4 6 8 10
V
GS
= 4.5V
5
6
5.5
6.25
6.5
8, 7
10
8
2
20 50
V
GS
= 5 V
5.5
6
6.5
7.5
10, 8
6.75
7
40 30 10
0
0 2 4 6 8
8
Tc = 55C
25
100
12
16
20
4
10 0
I
D
= 12 A
4 8 12 16
3
6
20
10
8
6
4
2
DRAIN-SOURCE VOLTAGE V
DS
(V)

I
D
V
DS



R
DS (ON)
I
D

DRAIN CURRENT I
D
(A)

Y
fs
I
D

F
O
R
W
A
R
D

T
R
A
N
S
F
E
R

A
D
M
I
T
T
A
N
C
E

Y
f
s

(
S
)

DRAIN-SOURCE VOLTAGE V
DS
(V)

I
D
V
DS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

GATE-SOURCE VOLTAGE V
GS
(V)

I
D
V
GS


D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)


D
R
A
I
N
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
D
S


(
V
)


GATE-SOURCE VOLTAGE V
GS
(V)

V
DS
V
GS
COMMON SOURCE
Tc = 25C
PULSE TEST
COMMON SOURCE
Tc = 25C
PULSE TEST
COMMON SOURCE
V
DS
= 20 V
PULSE TEST
COMMON SOURCE
Tc = 25
PULSE TEST
COMMON SOURCE
V
DS
= 20 V
PULSE TEST

D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

20
16
12
8
4
0
24
0
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TK12A50D
2008-09-10 4

1
0.1
10
100
1000
10000
1 10 100
C
iss

C
oss

C
rss

0
0.1
0.2
1
10
100
0.6 0.8 1.2
V
GS
= 0, 1 V
10
5
1
3
0.4 1.0 1.4

D
R
A
I
N

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N



P
D


(
W
)

CASE TEMPERATURE Tc (C)

P
D
Tc


DRAIN-SOURCE VOLTAGE V
DS
(V)

I
DR
V
DS

D
R
A
I
N

R
E
V
E
R
S
E

C
U
R
R
E
N
T

I
D
R


(
A
)


CASE TEMPERATURE Tc (C)

V
th
Tc


DRAIN-SOURCE VOLTAGE V
DS
(V)

CAPACITANCE V
DS


C
A
P
A
C
I
T
A
N
C
E


C


(
p
F
)

G
A
T
E
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
G
S


(
V
)

TOTAL GATE CHARGE Q
g
(nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS

D
R
A
I
N
-
S
O
U
R
C
E

V
O
L
T
A
G
E


V
D
S


(
V
)

0 10 40
500
200
100
300
400
0
30 20
COMMON SOURCE
I
D
= 12 A
Tc = 25C
PULSE TEST
20
8
4
12
16
0
V
DD
= 100 V
200 V
GS

400
V
DS

D
R
A
I
N
-
S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E


R
D
S

(
O
N
)


(

)

160 40 0 40 80 120 80
2.5
2.0
1.5
1.0
0.5
0
I
D
= 12 A
3
6
V
GS
= 10 V
CASE TEMPERATURE Tc (C)

R
DS (ON)
Tc
COMMON SOURCE
PULSE TEST

COMMON SOURCE
Tc = 25C
PULSE TEST
G
A
T
E

T
H
R
E
S
H
O
L
D

V
O
L
T
A
G
E

V
t
h


(
V
)

0
1
2
3
5
80 40 0 40 80 120 160
4
COMMON SOURCE
V
DS
= 10 V
I
D
= 1 mA
PULSE TEST

80
40
0
0 40 80 120 160
20
60
200
COMMON SOURCE
V
GS
= 0 V
f = 1 MHz
Tc = 25C
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TK12A50D
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0.001
1
1
10
100
10 1000 100
100 s *
1 ms *
V
DSS
max
0.01
0.1
DC OPERATION
Tc = 25C
0.01
10
0.1
1
10
100 1m 10m 100m 1 10
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.001
500
400
300
200
100
0
25 50 75 100 125 150
T
P
DM
t
Duty = t/T
R
th (ch-c)
= 2.78C/W

CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)

E
AS
T
ch

A
V
A
L
A
N
C
H
E

E
N
E
R
G
Y

E
A
S


(
m
J
)


r
th
t
w

PULSE WIDTH t
w
(s)

N
O
R
M
A
L
I
Z
E
D

T
R
A
N
S
I
E
N
T

T
H
E
R
M
A
L

I
M
P
E
D
A
N
C
E


r
t
h

(
t
)
/
R
t
h

(
c
h
-
c
)

SINGLE PULSE
15 V
15 V
TEST CIRCUIT WAVEFORM
I
AR

B
VDSS

V
DD
V
DS
R
G
= 25
V
DD
= 90 V, L = 4.3 mH

=
V
DD
B
VDSS
B
VDSS 2
I L
2
1

AS

DRAIN-SOURCE VOLTAGE V
DS
(V)

SAFE OPERATING AR
I
D
max (PULSED) *
I
D
max (CONTINUOUS) *
* SINGLE NONREPETITIVE PULSE
Tc=25C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
D
R
A
I
N

C
U
R
R
E
N
T


I
D


(
A
)

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TK12A50D
2008-09-10 6



RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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