1.What is the order of energy gap in a conductor, semi conductor, and insulator?.

2.Why does the conductivity of a semi conductor change with the rise in temperature ?
3. Is the number of electrons greater than, less than (or e!ual to the number of holes in
an
intrinsic semi conductor?
".#how in a energy band diagram the donor level for an $%type semi conductor.
&.. 'raw in a energy band the acceptor level for a (%type semi conductor .
).what is *nee voltage in a +unction 'iode?
,. In transistor a current controlled ortemperature controlled device?.
-. In a given diagram ,is the diode reverse (or forward biased?.
..which gate is represented by the following diagram?.
1/.0he ratio of number of free electrons to holes ne1nh for two different materials 2 and
3 are 1 and 41 respectively. $ame the type of semi conductor to which 2 and 3 belongs.
11.In half wave rectification , what is the output fre!uency if the input fre!uency is &/ h5.
What is the output fre!uency of a full wave rectification for the same input fre!uency.
12. 6ow can you relate drift velocity and mobility of an electron?
13. #how by the graph how does the current vary with the voltage change for a +unction
diode.
1". Why do semiconductors obey 7689# law for only low fields?
1&. 8ention the factors upon which 0ranconductance of a transistor depend.
1). :or faster action which transistor is used and why?
1,. What are input and output characteristics of a transistor? 'raw the graphs.
1-. 2 germanium diode is preferred to a silicon one for rectifying small voltages. ;<plain
why?
1..;<press by a truth table the output = for all possible inputs 2 and 3 in the circuit
shown below.
2/. Write the 3oolean e!uation and truth table for the circuit shown below.What is the
output when all the inputs are high?
23. :or a common emitter amplifier, current gain > &/. If the emitter current is ).)m2,
calculate collector and base current. 2lso calculate current gain, when emitter is wor*ing
as common base amplifier.
2".0he base current is 1//m2 and collector current is 3m2.
a ?alculate the values of b, Ie, and a
b 2 change of 2/m2 in the base current produces a change of /.&m2in the collector
current. ?alculate ba.c.
2&. In $($ transistor circuit, the collector current is &m2. If .&@ of the electrons emitted
reach the collector region, what is the base current?In a transistor circuit shown the
figure, the emitter current is &m2 and collector current ".,& m2. ?alculate the base
current and the value of Ab.
2,.2 circuit symbol of a logic gate and two input wave forms 2 and 3 are shown
a $ame the logic gate
b Bive the output wave form
2-. 0he diode shown in the figure has a constant voltage drop of /.&C at all currents and
a ma<imum power rating of 1//mW. What should be the value of resistance A connected
in series, for ma<imum current.?
2..:or a transistor wor*ing as a common base amplifier, current gain is /..). If the
emitter current is ,.2m2, then calculate the base current. 3/. :or a common emitter
amplifier, the current gain is ,/. If the emitter current is -.-m2, calculate the collector
and base current.
31.0he base current of a transistor is 1/& m2 and collector current is 2./& m2.
a 'eterine the value of D ,Ie , and E
b 2 change of 2, F2 in the base current produces a change of /.)& m2 in the collector
current . :ind Da.c.
32. In a silicon transistor, a change of ,.-.m2 in the emitter current produces a change of
,.- m2 in the collector current. What change in the base current is necessary to produce
an e!uivalent change in the collector current?

1. ?onductor % no energy gap #emi ?onductor % It is of the order of 1 ev. Insulator % ) ev
(or more than ) ev.
2. When a semi conductor is heated more G more electrons get enough energy to +ump
across the forbidden energy gap from valence band to the conduction band, where they
are free to conduct electricity. 0hereby increasing the conductivity of a semi conductor.
3. In an intrinsic semi conductor the number of free electrons and holes is same.
".
&.
).
). 2bout /.3C germanium .2bout /.),C for silicon.
,. 0ransistor is a current controlled devices.
-. Aeverse biased.
..$2$' B20;.
1/.If ne1nh >1 . 6ence 2 is intrinsic semi conductor.
If ne1nh 41 , ne4nh hence 3 is (%type.
11. :or half wave rectification &/ 65., :or :ull wave rectification 1//65.
12. 8obility of an electron is defined as the drift velocity of electron per unit electric
field, i.e. Fe> Ce 1; 8obility of a hole is defined as the drift velocity of hole per unit
electric field, i.e. Fh> Ch 1; 0he electrical conductivity(H is the reciprocal of resistivity
(p, therefore ?onductivity, H >11 I > e(ne Fe J nh Fh Where ne G nh are free electron
density G hole density respectively.
13. 'iagram
1". 0he drift velocity of a charge carrier is proportional to electric ;. 0herefore C >
e;01m ie. C a ; 3ut C cannot be increased indefinitely by increasing ; . 2t high speed
rela<ation time (0 begins to decrease due to increase in collision fre!uency. #K so drift
velocity saturates at thermal velocity (l7ms%1. 2n electric field of 1/) C1m causes
saturation of drift velocity. 6ence semi% conduction obey ohm9s law for low electrical
field and above this field ( ; 4 1/) C1m current becomes independent of potential.
1&. 0he factors upon which transconductance of a transistor depend are as follows%%
i Beometry of the transistor
ii 'oping levels.
iii 3iasing of the transistors.
1). :or faster action $($ 0ransistor is used .In an $($ transistor, current conduction is
mainly by free electron ,whereas in ($( type transistor .it is mainly holes #ince electron
are more mobile than holes we prefer $($ for faster action as well as high conduction
current.
1,. graphsK
1-. 3ecause the energy gap for Be ( ;g > /., ev is smaller than the energy gap for #i (;g
> 1.1ev . 8oreover, the germanium diode is much more open to the danger of high
temperature affect than silicon at high voltage.
1.. 0he output of the 2$' gate is = > 2.3 conse!uently the input of the 7A gate are 2
and 2.3 . 0hen the final = > 2 J 2.3
2/. 0he output of 7A gate is 2J3. ?onse!uently, the inputs of 2$' gate are 2J3 G ?
6ence the 3oolean e!uation for the given circuit is =>(2J3.?
21 2$' Bate using $2$' B20;K%
22. $70 gate using $2$' gateK%
0ruth 0ableK%
23. 6ere D >&/
Ie >).)m2
D >Ic1 Ib
Ic>D Ib >&/ Ib
Ie>Ic J Ib
Ib>/.12.m2
6ence,
Ic >&/ L ).)1&1 > ).",m2
D > E 1 (1 % E
E > D 1 (1 J D
E > /..-
2". 6ere
Ib > 1//F2 > /.1m2
Ic > 3m2
aD>Ic 1 Ib > 3/
D > E 1 (1% E
E > /..,
E > Ic 1 Ie
Ie > 3.1 m2
b M Ib > 2/F2 /./2 m2
Da.c. > M Ic 1 M Ib
Da.c. > 2&
2&. 6ere
Ic>.&@ of Ie > (.& 1 1// Ie
Ie > (1// 1 .& L & m2 > &.2)m2
Ie> IcJ Ib
Ib > /.2& m2
2). 6ere
Ie > &m2
Ic > ".,& m2
Ie > Ic J Ib
Ib > ,& L 1/%& 2
C > Ib Ab
C > &C
Ab > C 1 Ib
Ab > ).), *N
2,. 0his is 2$' logic gate
7utput wave form

2-. 6ere
e.m.f of the source, ; > 1.&C
Coltage drop across the diode , Cd > /.&C
8a<imum power rating of the diode
I > (( 1 Cd
I> /.22
(otential drop across resistance A
C> ; O Cd
> 1C
A > C 1 I > 1 1 /.2 > &N
2.. E > /..) , Ie > ,.2m2
E > Ic 1 Ie
Ic > E Ie > )..1 m2
Ib > Ie OIc
Ib > /.2. m2.
3/. D > ,/
Ie > -.-m2
Ie> Ic JIb
Ib > -.- 1 ,1
Ib > /.12" m2
31. 31. Ib > 1/& L 1/%) 2 Ic > 2./& L 1/%32
D > Ic 1 Ib > 1..&
2lso,
Ie > Ib J Ic > 2.1&& L 1/%3 2
E > Ic 1 Ie > /..&
MIb > 2,F2 > 2, L 1/%) 2
D > MIc 1 MIb > 2".1
32. MIe > ,.-. L 1/%3 2
M Ic > ,.- L 1/%3 2
$ow Ea.c. > M Ic 1 M Ie > /..--)
We have, Dac> Eac 1 (1%Eac > -).,2
2lso,
Dac > M Ic 1 MIb
MIb > M Ic 1 Dac
MIb > (,.- L 1/%3 1 (-).,2
MIb > -..." L 1/%)2