Document Number: 81008 For technical questions, contact: emittertechsupport@vishay.com www.vishay.

com
Rev. 2.0, 29-Jun-09 1
TSAL5300
High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
Vishay Semiconductors

DESCRIPTION
TSAL5300 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Leads with stand-off
Peak wavelength:
p
= 940 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: = 22
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
Note
Test conditions see table Basic Characteristics
Note
MOQ: minimum order quantity
Note
T
amb
= 25 C, unless otherwise specified
96 11505
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) (deg)
P
(nm) t
r
(ns)
TSAL5300 45 22 940 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSAL5300 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1
TSAL5300-MSZ Tape and ammopack MOQ: 5000 pcs, 1000 pcs/ammopack T-1
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5 V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 s I
FM
200 mA
Surge forward current t
p
= 100 s I
FSM
1.5 A
Power dissipation P
V
160 mW
Junction temperature T
j
100 C
Operating temperature range T
amb
- 40 to + 85 C
Storage temperature range T
stg
- 40 to + 100 C
Soldering temperature t 5 s, 2 mm from case T
sd
260 C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered
on PCB
R
thJA
230 K/W

www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81008
2 Rev. 2.0, 29-Jun-09
TSAL5300
Vishay Semiconductors
High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
T
amb
= 25 C, unless otherwise specified
0
20
40
60
80
100
120
140
160
180
0 10 20 30 40 50 60 70 80 90 100
21211 T
amb
- Ambient Temperature (C)
P
V

-

P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n

(
m
W
)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (C)
21212
I
F

-

F
o
r
w
a
r
d

C
u
r
r
e
n
t

(
m
A
)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.35 1.6 V
I
F
= 1 A, t
p
= 100 s V
F
2.6 3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
Reverse current V
R
= 5 V I
R
10 A
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
25 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
30 45 150 mW/sr
I
F
= 1 A, t
p
= 100 s I
e
260 350 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms
e
35 mW
Temperature coefficient of
e
I
F
= 20 mA TK
e
- 0.6 %/K
Angle of half intensity 22 deg
Peak wavelength I
F
= 100 mA
p
940 nm
Spectral bandwidth I
F
= 100 mA 50 nm
Temperature coefficient of
p
I
F
= 100 mA TK
p
0.2 nm/K
Rise time
I
F
= 100 mA t
r
800 ns
I
F
= 1 A t
r
500 ns
Fall time
I
F
= 100 mA t
f
800 ns
I
F
= 1 A t
f
500 ns
Virtual source diameter Method: 63 % encircled energy d 2.3 mm

Document Number: 81008 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 2.0, 29-Jun-09 3
TSAL5300
High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
Vishay Semiconductors

BASIC CHARACTERISTICS
T
amb
= 25 C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
t
p
- Pulse Duration (ms) 96 11987
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
I
-

F
o
r
w
a
r
d

C
u
r
r
e
n
t

(
A
)
F

t
p
/T = 0.01
I
FSM
= 1 A (Single Pulse)
0.05
0.1
0.5
1.0
V
F
- Forward Voltage (V) 13600
10
1
10
0
10
2
10
3
10
4
t
P
= 100 s
t
P
/T = 0.001
0
I
F

-

F
o
r
w
a
r
d

C
u
r
r
e
n
t

(
m
A
)
4 3 2 1
14327
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
I
F
- Forward Current (mA)
I
-

R
a
d
i
a
n
t

I
n
t
e
n
s
i
t
y

(
m
W
/
s
r
)
e
-

R
a
d
i
a
n
t

P
o
w
e
r

(
m
W
)
e
I
F
- Forward Current (mA) 13602
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100

- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
I
e

r
e
l
;
140
94 7993
I
F
= 20 mA

e

r
e
l

T
amb
- Ambient Temperature (C)
890
0
0.25
0.5
0.75
1.0
1.25
- Wavelength (nm)
14291
-

R
e
l
a
t
i
v
e

R
a
d
i
a
n
t

P
o
w
e
r
e
r
e
l

I
F
= 100 mA

990 940

www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81008
4 Rev. 2.0, 29-Jun-09
TSAL5300
Vishay Semiconductors
High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs

Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
94 8883
0.6
0.9
0.8
0
30
10 20
40
50
60
70
80
0.7
1.0
0 0.2 0.4
I
e

r
e
l
-

R
e
l
a
t
i
v
e

R
a
d
i
a
n
t

I
n
t
e
n
s
i
t
y

-

A
n
g
u
l
a
r

D
i
s
p
l
a
c
e
m
e
n
t
3
4
.
4

0
.
5
5
<
0
.
7
1.1 0.25
0.5
+ 0.15
- 0.05
5 0.15
2.54 nom.
0.5
+ 0.15
- 0.05

5
.
8

0
.
1
5
8
.
7

0
.
3
7
.
7

0
.
1
5
1

m
i
n
.
Area not plane
technical drawings
according to DIN
specifications
6.544-5258.05-4
Issue: 8; 19.05.09
96 12122
A C
(
3
.
6
)
1
1
.
4

0
.
3
R2.49 (sphere)

Document Number: 81008 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 2.0, 29-Jun-09 5
TSAL5300
High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
Vishay Semiconductors

Fig. 10 - 5 mm Devices on Tape
AMMOPACK
The tape is folded in a concertina arrangement and laid in
cardboard box.
If components are required with cathode before the anode
(figure 12), then start of tape should be taken from the side
of the box marked -. If components are required with anode
before cathode, then tape should be taken from the side of
the box marked +.
Fig. 11 - Tape Direction
TAPE DIMENSIONS TSAL5300
OPTION H 0.5 mm QUANTITY/BOX
CS21Z 22 1000
FSZ 27 1000
GSZ 29 1000
MSZ 25.5 1000
0
.
3

0
.
2
2.54
+ 0.6
- 0.1
12.7 0.2
5.08
0.7
1
8
+

1
-

0
.
5
9

0
.
5
Measure limit over 20 index-holes: 1
1
2

0
.
3
0.9 max.
6.35 0.7
4 0.2
12.7 1
1

2
19314
Tape feed direction
Diodes: cathode before anode
Transistors: collector before emitter
Label
Tape feed direction
C
B
A
94 8667
Diodes: anode before cathode
Transistors: emitter before collector

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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