0

5
2
-
6
2
5
9




R
e
v

B



8
-
2
0
0
2
MIN TYP MAX
3 4.5 6
2.1 3.4
2.5 3.4
500
3000
100
Characteristic / Test Conditions
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 500A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 60A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 60A, T
j
= 125C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V, V
CE

= 0V)
UNIT
Volts
mA
nA
Symbol
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
S
O
T
-
2
2
7
G
E
E
C
ISOTOP

"UL Recognized"
APT60GF120JRD
1200V
MAXIMUM RATINGS All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
APT60GF120JRD
1200
20
30
115
60
360
360A @ 960V
521
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
@ T
C
= 25C
Reverse Bias Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
G
C
E
The Fast IGBT

is a new generation of high voltage power IGBTs. Using Non-

Punch Through Technology the Fast IGBT combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed
.
Low Forward Voltage Drop 20 kHz operation @ 800V, 24A
Low Tail Current 10 kHz operation @ 800V, 40A
RBSOA and SCSOA Rated Ultra Low Leakage Current
Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT

& FRED
0
5
2
-
6
2
5
9




R
e
v

B



8
-
2
0
0
2
APT60GF120JRD DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
RBSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE

= 0V, V
CE

= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE

= 600V
I
C

= 60A
T
J
= 150C, R
G

= 5, V
GE

=
15V, L = 100H,V
CE

= 960V
Inductive Switching (25C)
V
CC

= 800V
V
GE

= 15V
I
C

= 60A
R
G

= 5
T
J

= +25C
Inductive Switching (125C)
V
CC

= 800V
V
GE

= 15V
I
C

= 60A
R
G

= 5
T
J

= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
MIN TYP MAX
7080
815
441
9
695
65
390
360
52
79
676
56
TBD
8404
6806
52
65
764
126
TBD
11878
8955
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
C/W
gm
MIN TYP MAX
.24
.66
29.2
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
5
2
-
6
2
5
9




R
e
v

B



8
-
2
0
0
2
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V) V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V) FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V) T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C) 5T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
B
V
C
E
S
,


C
O
L
L
E
C
T
O
R
-
T
O
-
E
M
I
T
T
E
R

B
R
E
A
K
D
O
W
N
V
C
E
,

C
O
L
L
E
C
T
O
R
-
T
O
-
E
M
I
T
T
E
R


V
O
L
T
A
G
E

(
V
)
I
C
,

C
O
L
L
E
C
T
O
R


C
U
R
R
E
N
T

(
A
)
I
C
,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

(
A
)
V
O
L
T
A
G
E


(
N
O
R
M
A
L
I
Z
E
D
)
I
C
,

D
C


C
O
L
L
E
C
T
O
R


C
U
R
R
E
N
T
(
A
)
V
C
E
,

C
O
L
L
E
C
T
O
R
-
T
O
-
E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
)
V
G
E
,

G
A
T
E
-
T
O
-
E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
)
I
C
,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

(
A
)
TYPICAL PERFORMANCE CURVES
V
GE
= 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
C
=25C
T
J
= 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE
= 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE
= 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J
= 25C
T
J
= 125C
T
J
= -55C
I
C
= 80A
T
J
= 25C
T
C
=125C
T
C
=25C
T
C
=125C
V
CE
= 960V
V
CE
= 600V
V
CE
= 240V
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C=
30A
I
C=
60A
I
C=
120A
APT60GF120JRD
T
C
=-55C
T
C
=-55C
0 1 2 3 4 0 .5 1 1.5 2 2.5 3 3.5 4 4.5
0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160
8 10 12 14 16 -50 -25 0 25 50 75 100 125
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
4
3.5
3
2.5
2
1.5
1
0.5
0
160
140
120
100
80
60
40
20
0
I
C=
120A
I
C=
30A
I
C=
60A
120
100
80
60
40
20
0
350
300
250
200
150
100
50
0
4
3.5
3
2.5
2
1.5
1
0.5
0
1.2
1.15
1.1
1.05
1.0
0.95
0.90
0.85
0.8
Graph does not apply
0
5
2
-
6
2
5
9




R
e
v

B



8
-
2
0
0
2
APT60GF120JRD
V
CE
= 800V
R
G
= 5
L = 100 H
V
GE
= 15V
T
J
=25C
T
J
=125C
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 800V
V
GE
= +15V
R
G
= 5
V
CE
= 800V
V
GE
= +15V
R
G
= 5
V
CE
= 800V
V
GE
= +15V
R
G
= 5
S
W
I
T
C
H
I
N
G


E
N
E
R
G
Y


L
O
S
S
E
S

(

J
)
E
O
N
2
,

T
U
R
N

O
N

E
N
E
R
G
Y

L
O
S
S

(

J
)
t
r
,

R
I
S
E

T
I
M
E

(
n
s
)
t
d
(
O
N
)
,

T
U
R
N
-
O
N

D
E
L
A
Y

T
I
M
E

(
n
s
)

S
W
I
T
C
H
I
N
G


E
N
E
R
G
Y

L
O
S
S
E
S

(

J
)
E
O
F
F
,

T
U
R
N


O
F
F


E
N
E
R
G
Y


L
O
S
S

(

J
)
t
f
,

F
A
L
L

T
I
M
E

(
n
s
)
t
d

(
O
F
F
)
,

T
U
R
N
-
O
F
F

D
E
L
A
Y

T
I
M
E

(
n
s
)
10 20 30 40 50 60 70 0 20 40 60 80 100 120
10 20 30 40 50 60 70 80 90 100 110 120 10 20 30 40 50 60 70
10 20 30 40 50 60 70 80 90 100 110120 10 20 30 40 50 60 70 80 90 100110 120
0 10 20 30 -25 0 25 50 75 100 125
800
800
700
600
500
400
300
200
100
0
200
180
160
140
120
100
80
60
40
20
0
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
35000
30000
25000
20000
15000
10000
5000
0
70
60
50
40
30
20
10
0
200
180
160
140
120
100
80
60
40
20
0
35000
30000
25000
20000
15000
10000
5000
0
25000
20000
15000
10000
5000
0
E
on2
30A
E
on2
60A
E
off
60A
E
off
30A
E
off
120A
E
off
30A
E
off
60A
E
on2
30A
E
on2
60A
E
on2
120A
V
CE
= 800V
T
J
= 25C, T
J
=125C
R
G
= 5
L = 100 H
V
GE
= 15V
V
CE
= 800V
R
G
= 5
L = 100 H
V
GE
= 15V
T
J
= 125C
T
J
= 25C
T
J
= 125C
T
J
= 25C
V
CE
= 800V
R
G
= 5
L = 100 H
V
GE
= 15V
T
J
= 125C
T
J
= 25C
T
J
=125C
T
J
= 25C
V
CE
= 800V
V
GE
= +15V
T
J
= 125C
0
5
2
-
6
2
5
9




R
e
v

B



8
-
2
0
0
2
10 20 30 40 50 60 70 80 90 100
36
10
5
1
0.25
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t
1
/
t
2
Peak T
J
= P
DM
x Z
JC
+ T
C
t
1
t
2
P
D
M
Z

J
C
,

T
H
E
R
M
A
L

I
M
P
E
D
A
N
C
E

(

C
/
W
)
0.05
D=0.5
0.2
0.02
0.01
0.1
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0 10
10,000
5,000
1,000
500
100
400
350
300
250
200
150
100
50
0
C
,

C
A
P
A
C
I
T
A
N
C
E


(
P
F
)
I
C
,

C
O
L
L
E
C
T
O
R


C
U
R
R
E
N
T

(
A
)
F
M
A
X
,

O
P
E
R
A
T
I
N
G

F
R
E
Q
U
E
N
C
Y

(
k
H
z
)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18, Reverse Bias Safe Operating Area
0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 9001000
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
TYPICAL PERFORMANCE CURVES
T
J
= 125C
T
C
= 75C
D = 50 %
V
CE
= 800V
R
G
= 5
C
res
C
ies
C
oes
max max1 max 2
max1
d(on) r d(off ) f
diss cond
max 2
on2 off
J C
diss
JC
F min(f , f )
0.05
f
t t t t
P P
f
E E
T T
P
R

=
=
+ + +

=
+

=
APT60GF120JRD
0
5
2
-
6
2
5
9




R
e
v

B



8
-
2
0
0
2
APT60GF120JRD
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 22, Turn-on Switching Waveforms and Definitions
I
C
A
D.U.T.
APT 60GF120JRD
V
CE
Figure 21, Inductive Switching Test Circuit
18V
V
CC
0
t
f
Collector Voltage
Collector Current
10%
90%
T
J
= 125 C
t
d(off)
Gate Voltage
Switching Energy
90%
5 %
t
r
Collector Voltage
Collector Current
90%
T
J
= 125 C
5%
t
d(on)
Gate Voltage
Switching
Energy
10%
10%
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T. DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
0
5
2
-
6
2
5
9




R
e
v

B



8
-
2
0
0
2
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 80C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 60A
Maximum Forward Voltage I
F
= 120A
I
F
= 60A, T
J
= 150C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN TYP MAX
2.5
2.0
2.0
APT60GF120JRD
60
100
540
MAXIMUM RATINGS All Ratings: T
C
= 25C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
APT60GF120JRD
MIN TYP MAX
70 85
70
130
170
170
18 30
29 40
630
1820
12
12
900
600
UNIT
ns
Amps
nC
Volts
A/s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt

= -15A/s, V
R
= 30V,

T
J
= 25C
Reverse Recovery Time T
J
= 25C
I
F
= 60A, di
F
/dt

= -480A/s, V
R
= 650V T
J
= 100C
Forward Recovery Time T
J
= 25C
I
F
= 60A, di
F
/dt

= 480A/s, V
R
= 650V T
J
= 100C
Reverse Recovery Current T
J
= 25C
I
F
= 60A, di
F
/dt

= -480A/s, V
R
= 650V T
J
= 100C
Recovery Charge T
J
= 25C
I
F
= 60A, di
F
/dt

= -480A/s, V
R
= 650V T
J
= 100C
Forward Recovery Voltage T
J
= 25C
I
F
= 60A, di
F
/dt

= 480A/s, V
R
= 650V T
J
= 100C
Rate of Fall of Recovery Current T
J
= 25C
I
F
= 60A, di
F
/dt

= -480A/s, V
R
= 650V (See Figure 33) T
J
= 100C
DYNAMIC CHARACTERISTICS
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
10
-5
10
-4
10
-3
10
-2
10
-1
1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Z

J
C
,

T
H
E
R
M
A
L

I
M
P
E
D
A
N
C
E

(

C
/
W
)
0.45
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t
1
/
t
2
Peak T
J
= P
DM
x Z
JC
+ T
C
t
1
t
2
P
D
M
0.1
0.02
0.05
0.2
D=0.5
0.01
SINGLE PULSE
0
5
2
-
6
2
5
9




R
e
v

B



8
-
2
0
0
2
APT60GF120JRD TYPICAL PERFORMANCE CURVES
t
r
r
,

R
E
V
E
R
S
E

R
E
C
O
V
E
R
Y

T
I
M
E
I
R
R
M
,

R
E
V
E
R
S
E

R
E
C
O
V
E
R
Y

C
U
R
R
E
N
T
I
F
,

F
O
R
W
A
R
D

C
U
R
R
E
N
T
(
n
a
n
o
-
S
E
C
O
N
D
S
)
(
A
M
P
E
R
E
S
)
(
A
M
P
E
R
E
S
)
t
f
r
,

F
O
R
W
A
R
D

R
E
C
O
V
E
R
Y

T
I
M
E
K
f
,

D
Y
N
A
M
I
C

P
A
R
A
M
E
T
E
R
S
Q
r
r
,

R
E
V
E
R
S
E

R
E
C
O
V
E
R
Y

C
H
A
R
G
E
(
n
a
n
o
-
S
E
C
O
N
D
S
)
(
N
O
R
M
A
L
I
Z
E
D
)
(
n
a
n
o
-
C
O
U
L
O
M
B
S
)
V
f
r
,

F
O
R
W
A
R
D

R
E
C
O
V
E
R
Y

V
O
L
T
A
G
E
(
V
O
L
T
S
)
T
J
= 100C
V
R
= 650V
T
J
= 100C
T
J
= 150C
T
J
= 25C
T
J
= -55C
t
rr
I
RRM
Q
rr
Q
rr
t
rr
60A
30A
120A
60A
30A
120A
30A
60A
t
fr
0 1 2 3 4 5 10 50 100 500 1000
0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150
0 200 400 600 800 1000 0 200 400 600 800 1000
5000
4000
3000
2000
1000
0
2.0
1.6
1.2
0.8
0.4
0.0
1500
1250
1000
750
500
250
0
V
fr
30
25
20
15
10
5
0
T
J
= 100C
V
R
= 650V
I
F
= 60A
T
J
= 100C
V
R
= 650V
T
J
= 100C
V
R
= 650V
V
F
, ANODE-TO-CATHODE VOLTAGE (VOLTS) di
F
/dt, CURRENT SLEW RATE (AMPERES/SEC)
Figure 2, Forward Voltage Drop vs Forward Current Figure 3, Reverse Recovery Charge vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/SEC) T
J
, JUNCTION TEMPERATURE (C)
Figure 4, Reverse Recovery Current vs Current Slew Rate Figure 5, Dynamic Parameters vs Junction Temperature
di
F
/dt, CURRENT SLEW RATE (AMPERES/SEC) di
F
/dt, CURRENT SLEW RATE (AMPERES/SEC)
Figure 6, Reverse Recovery Time vs Current Slew Rate Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
200
160
120
80
40
0
60
45
30
15
0
300
240
180
120
60
0
120A
0
5
2
-
6
2
5
9




R
e
v

B



8
-
2
0
0
2
APT60GF120JRD
SOT-227 (ISOTOP

) Package Outline
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter/Anode Collector/Cathode
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter/Anode
Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
Figure 32, Diode Reverse Recovery Test Circuit and Wave Forms
PEARSON 411
CURRENT
TRANSFORMER
di
F
/dt Adjust
30H
D.U.T.
+15v
-15v
0v
V
r
t
rr
/
Q
rr
Waveform
0.5 I
RRM
4
3
1
2
5
5
0.75 I
RRM
Zero
6
1
2
3
4
6
di
F
/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Peak Reverse Recovery Current.
t
rr
- Reverse Recovery Time Measured from Point of I
F
Q
rr
- Area Under the Curve Defined by I
RRM
and t
rr
.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of t
rr.
Current Falling Through Zero to a Tangent Line { diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM
.
6
Q
rr

=
1
/
2

(
t
rr

.

I
RRM
)
Figure 33, Diode Reverse Recovery Wave Forms and Definitions