Field-Effect Transistors

(FETs)
The FET differs from the BJ T in the following
important characteristics:
1.Its operation depends upon the flow of the majority
carriers only. It is therefore a unipolar device
2.simpler to fabricate and occupies less space in integrated
form
3.exhibits a high input resistance, typically many
megaohms
4.less noisy than a bipolar transistor
5.Exhibits no offset voltage at zero drain current, and
hence makes an excellent signal chopper
Almost all ICs are now made with MOSFETs.
FETs (Field-Effect Transistors) are much like BJTs (Bipolar
Junction Transistors).
Similarities:
Similarities:
Amplifiers
Switching devices
Impedance matching circuits
FET Types
FET Types

JFET
JFET Junction Field-Effect Transistor

MOSFET
MOSFET Metal-Oxide-Semiconductor Field-
Effect Transistor

D
D
-
-
MOSFET
MOSFET Depletion MOSFET

E
E
-
-
MOSFET
MOSFET Enhancement MOSFET
JFET Construction
JFET Construction
There are two types of
JFETs

n
n
-
-
channel
channel

p
p
-
-
channel
channel
The n-channel is more
widely used.
There are three terminals.

Drain
Drain (D) and
source
source (S) are connected to
the n-channel

Gate
Gate (G) is connected to the p-type material
N
N
-
-
Channel JFET Symbol
Channel JFET Symbol
7 7
JFET Operating Characteristics
JFET Operating Characteristics
There are three basic operating conditions for a
JFET:
V
GS
= 0, V
DS
increasing to some positive
value
V
GS
< 0, V
DS
at some positive value
Voltage-controlled resistor
As the reverse bias across the junction increases, so also does the
thickness of the region of immobile uncovered charges
The effective width of the channel will become progressively
decreased with increasing reverse bias
Accordingly, for a fixed drain-to-source voltage, the drain current
will be a function of the reverse-biasing voltage across the gate
junction.
For V
GS
= 0 small applied voltage V
DS
, I
D
increases linearly with
V
DS
.
With increasing current, the ohmic voltage drop between the
source and the channel region reverse-biases the junction, and the
conducting portion of the channel begins to constrict, the
constriction is more pronounced at distances farther from the
source
Eventually, a voltage V
DS
is reached at which the channel is
pinched off. This is the voltage, where the current I
D
begins to
level off and approach a constant value
If now a gate voltage V
GS
is applied in the direction to provide
additional reverse bias, pinch-off will occur for smaller values of
|V
DS
|, and the maximum drain current will be smaller.
JFET Operating Characteristics
JFET Operating Characteristics
At the pinch-off point:
Any further increase in
V
GS
does not produce any
increase in I
D
. V
GS
at
pinch-off is denoted as
V
V
p p
.
I
D
is at saturation or
maximum. It is referred to
as
I
I
DSS DSS
.
The ohmic value of the
channel is maximum.
q: electronic charge
N
D
: donor concentration
: dielectric constant of
channel material
for small I
D
The Transfer Characteristic: In amplifier applications the FET is
almost always used in the region beyond pinch-off (also called
constant current or current-saturation region).
I
DS
: Saturation drain current
I
DSS
: Value of the saturation drain current with the gate shorted tothe
shource(V
GS
= 0)
JFET
JFET
Transfer Characteristics
Transfer Characteristics
The transfer characteristic of input-to-output is not as
straightforward in a JFET as it is in a BJT.
In a BJT, indicates the relationship between I
B
(input)
and I
C
(output).
In a JFET, the relationship of V
GS
(input) and I
D
(output) is
a little more complicated:
2
V
V
1
DSS DS
P
GS
I I

=
18 18
JFET Transfer Curve
JFET Transfer Curve
This graph shows the value of I
D
for a given value of V
GS
.
Plotting the JFET Transfer Curve
Plotting the JFET Transfer Curve
Using I
DSS
and Vp (V
GS(off)
) values found in a specification sheet, the
transfer curve can be plotted according to these three steps:
Solving for V
GS
= 0V I
D
= I
DSS
2
P
GS
DSS D
V
V
1 I I

=
Step 1 Step 1
Solving for V
GS
= V
p
(V
GS(off)
) I
D
= 0A
2
P
GS
DSS D
V
V
1 I I

=
Step 2 Step 2
Solving for V
GS
= 0V to V
p
2
P
GS
DSS D
V
V
1 I I

=
Step 3 Step 3
p
p
-
-
Channel JFETS
Channel JFETS
The p-channel JFET
behaves the same as the
n-channel JFET, except
the polarities and
currents are reversed.
p
p
-
-
Channel JFET Characteristics
Channel JFET Characteristics
As V
GS
increases more
positively
The depletion zone
increases
I
D
decreases (I
D
< I
DSS
)
Eventually I
D
= 0A
Also note that at high levels of V
D
S the JFET reaches a
breakdown situation I
D
increases uncontrollably if V
DS
>
V
DSmax
.
MOSFETs
MOSFETs
MOSFETs have characteristics similar to J FETs and
additional characteristics that make them very useful.
There are two types of MOSFETs:

Depletion
Depletion
-
-
Type
Type

Enhancement
Enhancement
-
-
Type
Type
Depletion
Depletion
-
-
Type MOSFET Construction
Type MOSFET Construction
The
drain
drain (D) and
source
source (S)
connect to the to n-doped
regions. These n-doped regions
are connected via an n-channel.
This n-channel is connected to
the
gate
gate (G) via a thin
insulating layer of SiO
2
.
The n-doped material lies on a
p-doped substrate that may
have an additional terminal
connection called
substrate
substrate
(SS).
Basic MOSFET Operation
Basic MOSFET Operation
A depletion-type MOSFET can operate in two modes:
Depletion mode Depletion mode
Enhancement mode Enhancement mode
Depletion
Depletion
-
-
Type MOSFET in Depletion Mode
Type MOSFET in Depletion Mode
Depletion Mode Depletion Mode
The characteristics are similar to a JFET.
When V
GS
= 0V, I
D
= I
DSS
When V
GS
< 0V, I
D
< I
DSS
The formula used to plot the transfer
curve still applies:
2
P
GS
DSS D
V
V
1 I I

=
Depletion
Depletion
-
-
Type MOSFET in Enhancement Mode
Type MOSFET in Enhancement Mode
Enhancement Mode Enhancement Mode
V
GS
> 0V
I
D
increases above I
DSS
The formula used to plot
the transfer curve still
applies: 2
P
GS
DSS D
V
V
1 I I

=
Note that V
GS
is now a positive polarity
p
p
-
-
Channel D
Channel D
-
-
Type MOSFET
Type MOSFET
D
D
-
-
Type MOSFET Symbols
Type MOSFET Symbols
Enhancement
Enhancement
-
-
Type MOSFET Construction
Type MOSFET Construction
The drain drain (D) and source source (S) connect
to the to n-doped regions. These n-
doped regions are connected via an n-
channel
The gate gate (G) connects to the p-doped
substrate via a thin insulating layer of
SiO
2
There is no channel
The n-doped material lies on a p-doped
substrate that may have an additional
terminal connection called the
substrate substrate (SS)
Basic Operation of the Enhancement
Basic Operation of the Enhancement
-
-
Type MOSFET
Type MOSFET
The enhancement-type MOSFET only operates in the enhancement mode.
V
GS
is always positive
As V
GS
increases, I
D
increases
As V
GS
is kept constant
and V
DS
is increased,
then I
D
saturates (I
DSS
)
and the saturation level,
V
DSsat
is reached
Enhancement
Enhancement
-
-
Type MOSFET Transfer Curve
Type MOSFET Transfer Curve
To determine I
D
given V
GS
:
where:
V
T
= threshold voltage
or voltage at which the
MOSFET turns on
k = constant found in
the specification sheet
2
T GS D
) V V ( k I =
k can also be determined by using values at a
specific point and the formula:
2
T
GS(ON)
D(ON)
) V (V
I
k

=
V
DSsat
can be calculated by:
T GS Dsat
V V V =
p-Channel Enhancement-Type MOSFETs
The p-channel enhancement-type MOSFET is similar to the n-channel,
except that the voltage polarities and current directions are reversed.
MOSFET Symbols
MOSFET Symbols