November 2008. Version 1.0 MagnaChip Semiconductor Ltd.

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Absolute Maximum Ratings (T
C
=25
o
)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS -40 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current

(Note 2)
TC=25
o
C
ID
43 A
TC=100
o
C 27 A
Pulsed Drain Current IDM -90 A
Power Dissipation
TC=25
o
C
PD
50
W
TC=100
o
C 20
Single Pulse Avalanche Energy (Note 3) EAS 128 mJ
Junction and Storage Temperature Range TJ, Tstg -55~+150
o
C


Thermal Characteristics

Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient

(Note 1) RJA 40
o
C/W
Thermal Resistance, Junction-to-Case RJC 2.5


MDD3752
P-Channel Trench MOSFET, -40V, -43A, 17m
General Description

The MDD3752 uses advanced MagnaChips Trench
MOSFET Technology to provided high performance in on-
state resistance, switching performance and reliability.

Low RDS(ON), Low Gate Charge can be offering superior
benefit in the application.

Applications
Inverters
General purpose applications

Features

VDS = -40V
ID = -43A @VGS = -10V
RDS(ON)
< 17m @ VGS = -10V
< 25m @ VGS = -4.5V
D
G
S
G
S



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Ordering Information

Part Number Temp. Range Package Packing RoHS Status
MDD3752RH -55~150
o
C D-PAK Tape & Reel Halogen Free


Electrical Characteristics (T
J
=25
o
C unless otherwise noted)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = -250A, VGS = 0V -40 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.0 -2.0 -3.0
Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V - -1
A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1
Drain-Source ON Resistance RDS(ON)
VGS = -10V, ID = -20A - 13 17
m
VGS = -4.5V, ID = -10A 19 25
Forward Transconductance gFS VDS = -10V, ID = -20A 40 - S
Dynamic Characteristics
Total Gate Charge Qg
VDD = -20V, ID = -20A,
VGS = -10V
- 44.1 -
nC Gate-Source Charge Qgs - 8.6 -
Gate-Drain Charge Qgd - 9.3 -
Input Capacitance Ciss
V
DS
= -20V, V
GS
= 0V,
f = 1.0MHz
- 2088 -
pF Reverse Transfer Capacitance Crss - 168 -
Output Capacitance Coss - 290 -
Turn-On Delay Time td(on)
VGS = -10V ,VDD = -20V,
ID = -1A, RGEN=6.0
- 17.6 -
ns
Turn-On Rise Time tr - 17.8 -
Turn-Off Delay Time td(off) - 59.0 -
Turn-Off Fall Time tf - 19.8 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -20A, VGS = 0V - - 1.2 V
Reverse Recovery Time trr IS = -20A, di/dt=100A/us - 40 - ns
Reverse Recovery Charge Qrr - 40 - nC

Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. PD is based on TJ(MAX)=150
O
C, PD(TC=25
O
C) is based on RJC.
3. Starting TJ=25C, L=1mH, IAS=-16A VDD=-20V, VGS=-10V









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Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature

Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
20
25
V
GS
= -10V
-4.5V
-8V
-4.0V
-3.0V

-
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
-V
DS
, Drain-Source Voltage [V]
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
4
8
12
16
20
-V
GS
, Gate-Source Voltage [V]
T
A
=25
Notes :
V
DS
= -10V

I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
2 4 6 8 10
0
20
40
60
80
100
120
T
A
= 25

R
D
S
(
O
N
)

[
m

]
,
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
V
GS
, Gate to Source Volatge [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
0
10
1
10
2
T
A
=125
Notes :
V
GS
= 0V
25


-
I
S
,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
-V
SD
, Source-Drain voltage [V]
0 20 40 60 80 100
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
V
GS
= -10V
-8V
-6V
-5V
-4.5V
-4V
V
GS
= -3.5V


N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
-I
D
, Drain Current [A]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Notes :
1. V
GS
= -10 V
2. I
D
= -20 A

R
D
S
(
O
N
)
,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
T
J
, Junction Temperature [
o
C]
































































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10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
100 s
100 ms

DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
Single Pulse
R
thJC
=2.5 /W
T
C
=25

-
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
-V
DS
, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

Fig.11 Transient Thermal Response Curve

0 10 20 30 40 50
0
2
4
6
8
10
V
DS
= -20V
Note : I
D
= -20A


-
V
G
S
,

G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e

[
V
]
Q
G
, Total Gate Charge [nC]
0 10 20 30 40
0.0
500.0p
1.0n
1.5n
2.0n
2.5n
3.0n
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss


C
a
p
a
c
i
t
a
n
c
e

[
F
]
-V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0
10
20
30
40
50

-
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
T
C
, Case Temperature [ ]
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
Duty Factor, D=t
1
/t
2
PEAK T
J
= P
DM
* Z
JC
* R
JC
(t) + T
C
R
JC
=2.5 /W
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01


Z

J
C (
t
)
,

T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
t
1
, Rectangular Pulse Duration [sec]



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Physical Dimensions



2 Leads, DPAK (TO252)


Dimensions are in millimeters unless otherwise specified
























































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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.


MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.