sypeng@mail.ntust.edu.

tw
2014/9/19
Class Hours Friday 1:30pm~2:45pm~break~2:55pm~4:10pm

Office HoursFriday 4:30pm ~ 6:30pm
Office: EE209
Department of Electrical Engineering
National Taiwan University of Science and Technology

CMOS Fundamentals
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Outline
Silicon Crystal
Intrinsic Silicon and Band Diagram
Doped Silicon and Band Diagram
Current Densities
p-n Junction Diode
Reference:
1. Semiconductor Devices: Physics and Technology, by S.M. Sze
2. Operation and Modeling of the MOS Transistor, by Tsividis/McAndrew
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What is CMOS
CMOS
Complementary Metal-Oxide-Semiconductor
Substrate Material
Silicon: Neutral
Doner
P: Extra electron
Acceptor
B: Extra hole
Courtesy of Prof. B. A. Minch
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Silicon Atom
The positively charged nucleus is surrounded by electrons that move
within defined shells.
The potential differences between electron at different shells are very clear.
Silicon has 4 valence electrons at the outmost shell, which consists of 8
electron energy states.
1s
1s
2s
2p
3s
4s
5s
6s
3p
4p
5p
6p
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Silicon crystal lattice structure consists of two interleaved face
centered cubic (FCC) with displacement by a/4 in each
dimension.
Each Silicon atom is surrounded by 4 adjacent atoms with
equal distance.
Silicon Crystal
Lattice Structure
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Silicon Crystal
and Covalent Bond
The valence electrons in the
adjacent silicon atoms fill in the
empty electron states and form
covalent bonds.
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Electrons and Holes in Si
Electron and hole move in
opposite directions
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Band Diagram
With ionization energy, an electron can
break free of its ion core, creating a pair
of mobile electron and hole.
The energy states in solids lie in certain
ranges of values, which are separated by
bandgaps.
Insulator, semiconductor, and conductor
have different sizes of bandgaps.


SiO
2
Si

Al

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Fermi-Dirac Distribution
and Fermi Level
The possibility of an energy state being occupied is
statistically described by Fermi-Dirac distribution:
At Fermi level E
F
, the occupation probability is 0.5.
T~0 K T=300 K
1
( )
1
F
E E
k T
F E
e

=
+
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Fermi-Dirac Distribution
and Fermi Level
The possibility of an energy state being occupied is
statistically described by Fermi-Dirac distribution:
1
( )
1
F
E E
k T
F E
e

=
+
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Mobile Carrier Densities
in Intrinsic Semiconductors
The electron density within an energy interval around an energy E is given
by
The total electron density near the edge of conduction band is
The total hole density near the top edge of valence band is
(Mass Action Law valid in thermal equilibrium)
( , ) ( ) ( ) d n E d E N E F E d E =
( )
C F
E E
k T
C
n N e

=
( )
F V
E E
k T
V
p N e

=
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Fermi Level
for Intrinsic Semiconductors
For intrinsic semiconductors, n = p, we can define intrinsic carrier density
as
The Fermi level E
i
for an intrinsic semiconductor is given by
( ) ( )
kT
E E
V
kT
E E
C i
V i i C
e N e N n

= =
2
g
E
k T
i C V
n n p N N e

= =
lo g
2 2
C V V
i
C
N N N k T
E
N
| |
+
= +
|
\ .
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Impurity Doping
Doped Silicon Crystal: p-type Doped Silicon Crystal: n-type
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Electrons in n-type
Semiconductor
The extra electron introduced by the donor can move around
inside the crystal.
The space charge of the donor is positive.
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Doped Silicon Crystal: n-type
Donors form an energy level in the bandgap
close to the conduction-band edge.
The Fermi level is moved toward the
conduction-band edge.
More electrons in the conduction band than
holes in the valence band.
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Electrons and Holes
in p-type Semiconductor
The extra hole introduced by the acceptor can move around
inside the crystal.
The space charge of the acceptor is negative.
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Doped Silicon Crystal: p-type
Acceptors form an energy level in the bandgap
close to the valence-band edge.
The Fermi level is moved toward the valence-
band edge.
More holes in the valence band than electrons
in the conduction band.
Mass Action Law
Charge Neutrality
N-type: N
D
>>N
A
Majority electrons in conduction band


Minority holes in valence band

P-type: N
A
>>N
D

Majority holes in valence band


Minority electrons in conduction band
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Charge Density
2
i
n n p =
A D
n N p N + = +
( )
( )
2
2
0
1
4
2
n D A D A i D
n N N N N n N = + + ~
( )
( )
2
2
0
1
4
2
p A D A D i A
p N N N N n N = + + ~
2 2
0
0
i i
n
n D
n n
p
n N
= =
2 2
0
0
i i
p
p A
n n
n
p N
= =
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Fermi Level
( ) ( )
kT
E E
V
kT
E E
C i
V i i C
e N e N n

= =
P-type:
N-type:
( ) ( ) ( ) ( )
kT
E E
i
kT
E E
kT
E E
C
kT
E E
C n
i F F i i C F C
e n e e N e N n

= = =
0
( ) ( ) ( ) ( )
kT
E E
i
kT
E E
kT
E E
V
kT
E E
V p
F i V i i F V F
e n e e N e N p

= = =
0
i
E
i
E
( )
kT
E E
i n
i F
e n p

=
0
( )
kT
E E
i p
F i
e n n

=
0
Intrinsic carrier concentration:
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Basic Electrostatic Equations
Maxwell equations:
permittivity
charge density
Electric Potential Definition:
Poisson equation:
Laplacian operator:
electron potential energy at the band edges
Electric Field direction:
i
s
E

c
V =
0 s i r
c c c =
1 2
0
8 . 8 5 4 1 8 1 0 F / m c

=
1 1 . 9 f o r S i
r
c =
V E V =
2 2 2
2
2 2 2
x y z
c c c
A = V = + +
c c c
C V
E E q V q E V = V = V =
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Carrier Transport
electron current density:
electron flow velocity
n n
nqv J =
hole current density:
hole flow velocity p p
J p q v =
Diffusion: movement of carriers due to a concentration gradient.
n qD J
n diff n
V =
,
p qD J
p diff p
V =
,
Drift: movement of carriers due to an external field

n drift n
v =
,

p drift p
v =
,
n q J
n drift n
=
,
p q J
p drift p
=
,
electron diffusion coefficient
hole diffusion coefficient
electron mobility
hole mobility
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Current Densities
Einstein Relation:
T
U
q
kT D
= =

thermal voltage
Current Densities:
( ) n n U q n q n U q n q n qD J J J
T n n T n n n drift n diff n n
+ V = + V = + V = + =
, ,
( ) p p U q p q p U q p q p qD J J J
T p p T p p p drift p diff p p
+ V = + V = + V = + =
, ,
Equilibrium at a Potential Barrier
0
, ,
= +
drift n diff n
J J
0 = + V n n U
T
0 =
c
c

c
c
x
n
x
n
U
T

} }
=
2
1
2
1
1

d
U n
dn
T
n
n
T
U n
n
1 2
1
2
log

=
( )
T
U
e
n
n
1 2
1
2

=
The carrier increasing rate
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Continuity Equations
electron lifetime
hole lifetime
1
n n n
n
G R
t q
c
= + V
c
J
1
p p p
p
G R
t q
c
= + V
c
J
0 p p
n
n
n n
R
t

=
0 n n
p
p
p p
R
t

=
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p-n Junction Diode
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p-n Junction Diode
space charge
i
s
E

c
V =
V E V =
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p-n Junction Diode
2
lo g
D A
b i T
i
N N
q U
n
| |
u =
|
\ .
2
s D A
b i
D A
N N
d
q N N
c +
= u
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Depletion Width
The depletion width is
dominated by the impurity with
less concentration.
The depletion width is
increased if built-in potential
increases.
D
N
A
N
s
A
N
x
x
c
=
c
E c ) (
s
p A
x x qN
x
c
) (
) (
+
= E
s
n A
x x qN
x
c
) (
) (

= E
d
x qN
d
x qN
x qN
s
n D
s
n D
s
p A
bi
= E = + = u
c c c 2
1
2
1
2 2
max
2
2
p n
n D p A
x x d
x N x N
+ =
=
|
|
.
|

\
|
= u
2
log
i
A D
T bi
n
N N
U
2
s D A
b i
D A
N N
d
q N N
c +
= u
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Diode Thermal Equilibrium
If the potential is smaller than built-in potential, diffusion
current moves mobile carriers; more space charges will be
exposed, resulting in potential increment.
If the potential is larger than built-in potential, drift current
moves mobile carriers; less space charges will be exposed,
resulting in potential decrement.
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Forward Biased Diode
The applied voltage, V, lowers u
bi
and d.
The minority carrier concentrations at the
depletion edges increase exponentially with V.
The forward current density can be shown in
the form of
saturation current density
electron diffusion length
hole diffusion length
( )
/
1
V U t
n p S
J J J J e = + =
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Diode Current Derivation
Continuity Equations
Assuming no electron-hole pairs are generated in depletion
0
1
0
0
= V +

=
c
c
n
n
p p
J
q
n n
t
n
t
( ) n qD
q
n n
n
n
p p
V V =

1
0
t
( ) ) (
) (
2
2
0
x n
x
D
n x n
p n
n
p p
c
c
=

t
( ) 0
) (
) (
0
2
2
=

c
c
n n
p p
p
D
n x n
x n
x t
diffusion current
1
n n n
n
G R
t q
c
= + V
c
J
1
p p p
p
G R
t q
c
= + V
c
J
0 p p
n
n
n n
R
t

=
0 n n
p
p
p p
R
t

=
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Diode Current Derivation
( ) 0
) (
) (
0
2
2
=

c
c
n n
p p
p
D
n x n
x n
x t
Boundary Conditions:
( ) / /
0 0
( ) ( )
b i b i
n p
V V U t V U t
n p n p
n x n x e n n e

= ~ =
Ut V
p p p
e n x n
/
0
) ( ~
( ) 1 ) (
/
0 0
~
Ut V
p p p p
e n n x n
( )
( )
/
/
0 0
( ) 1
p n n
x x D
V U t
p p p
n x n n e e
t +
~
( )
( )
n p
L x x
Ut V
p
e e n
/
/
0
1
+
=
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Diode Current Derivation
( ) 1 ) ( ) (
/
0
= =
=
Ut V
n
p n
x x
p n p n
e
L
n qD
x n
dx
d
qD x J
p
( ) 1 ) ( ) (
/
0
= =
=
Ut V
p
n p
x x
n p n p
e
L
p qD
x p
dx
d
qD x J
n
( )
( )
/
/
0 0
( ) 1
p n
x x L
V U t
p p p
n x n n e e
+
=
( )
/
( ) ( ) 1
V U t
n p n p p n S
J J J J x J x J e = + = + =
0 0 n p p n
S
n p
q D n q D p
J
L L
= +
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Reverse Biased Diode
The applied voltage, V, increases u
bi
and d.
The minority carrier concentrations at the
depletion edges increase exponentially with V.
Thermal generation rate > recombination rate
near the depletion region edges.
The reverse current density is the saturation
current density, J
s
.
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Diode I-V Characteristics
Shockley Approximation:
Abrupt Junction
low injection condition
R
n
and R
p
~0 in the depletion
region
J
p
and J
n
are constant within
depletion region
( )
/
1
V U t
S
J J e =