EE420 POWER

ELECTRONICS
Chapter 07 Thyristors
Lecture 14-15

Dr. Tauseef Tauqeer
Thyristors
2
Learning objectives:
To learn about different type of thyristors,
Limitation of thyristors as switches,
Understand the gate characteristics and gate control
requirement of different type of thyristors.
Dr. Tauseef Tauqeer
Thyristors are family of power semiconductor devices and are used
extensively in the power electronics circuits.
Conventional thyristors are designed with gate controlled turned on
capability but without gate controlled turn-off capability, in which case
the thyristor can recover from its non-conducting state only when the
current is brought to zero by some other means.
Gate turn-off thyristors (GTOs) are designed to have both controlled
turn-on and turn-off capability.
Compared to the transistors, thyristors have lower on-state conduction
losses and higher power handling capability.
On the other hand transistors generally have superior switching
performances in terms of faster switching speed and lower switching
losses.
Advances are being continuously made to achieve devices with the
best of both (i.e. low on-state and switching losses, while increasing
their power handling capability.
7.1: Introduction
3 Dr. Tauseef Tauqeer
7.2: Thyristor Characteristics
4
Figure 7.1: Thyristor symbol and three pn junctions
A thyristor is a four layer semiconductor device of pnpn
structure with three pn junctions. It has three terminals:
anode, cathode, and gate.
Dr. Tauseef Tauqeer
7.2: Thyristor Characteristics

5
Figure 23-1(Mohan): Structural details of generic thyristor, vertical cross section
When the anode voltage is made positive with respect to cathode, the
junction J
1
and J
3
are forward biased. The junction J
2
is reverse
biased, and only a small leakage current flows from anode to
cathode.
Once a gate signal is applied it triggers the conduction. With higher
concentration of holes in the p-type layer it becomes a +ve feedback
process that can sustain even if the gate signal is removed.
(applied
electric field)
holes
electrons
electrons
Dr. Tauseef Tauqeer
7.2: Thyristor Characteristics

6
When the anode voltage is
made positive with respect to
cathode, the junction J
1
and
J
3
are forward biased. The
junction J
2
is reverse biased,
and only a small leakage
current flows from anode to
cathode. The thyristor is then
said to be in the Forward
Blocking, or Off State
Condition and the leakage
current is known as off-state
current I
D
.
If the anode-to-cathode voltage V
AK
is increased to a sufficiently large
value, the reverse biased junction J
2
breaks. This is known as
Avalanche Breakdown and the corresponding voltage is called forward
breakdown voltage V
BO
.
Figure 7.3: Thyristor circuit and vi
characteristics.
Dr. Tauseef Tauqeer
7.2: Thyristor Characteristics

7
Because the other junctions
J
1
and J
3
are already forward
biased, there is free
movement of carriers across
all three junctions, resulting
in a large forward anode
current. The device is then in
conducting state, or on state.
The voltage drop would be
due to the ohmic drop in the
four layers and it is small,
typically, 1 V.
Thyristor circuit and vi
characteristics.
Dr. Tauseef Tauqeer
7.2: Thyristor Characteristics

8
In the On state, the anode
current is limited by an external
impedance or a resistance R
L

as shown in figure.
Thyristor circuit and vi
characteristics.
Dr. Tauseef Tauqeer
7.2: Thyristor Characteristics

9
Thus the thyristor is a
latching device, it latches
into full conduction in its
forward direction.
Thus as described above, a
thyristor can be turned on
by increasing the forward
voltage V
AK
beyond V
BO
, but
such a turn on could be
destructive.
In practice, the forward
voltage V
AK
is maintained
below V
BO
and the thyristor
is turned on by applying a
positive voltage between its
gate and cathode.
Thyristor circuit and vi
characteristics.
Dr. Tauseef Tauqeer
7.2: Thyristor Characteristics

10
Latching Current I
L
is the
minimum anode current in
the on-state immediately
after the thyristor has
been turned on and the
gate signal has been
removed.
Once the thyristor is
turned on by a gating
signal and its anode
current is greater than the
holding current, the device
continues to conduct due
to positive feedback, even
if gating signal is removed.
Thyristor circuit and vi
characteristics.
Dr. Tauseef Tauqeer
7.2: Thyristor Characteristics

11
Once a thyristor conducts, it behaves like a conducting
diode and there is no control over the device. The device
continues to conduct because there is no depletion layer on
the junction J
2
due to free movement of carriers.
However, if the forward anode current is reduced below a
level known as the holding current I
H
, a depletion region
develops around junction J
2
due to reduced number of
carriers and the thyristor is in blocking state. Holding
Current (I
H
<I
L
) is the minimum anode current required to
maintain the thyristor in the on-state.
When the cathode voltage is positive with respect to the
anode, the junction J
2
is forward biased but junction J
1
and
J
3
are reverse biased. The thyristor is in Reverse Blocking
State and the reverse leakage current known as reverse
current I
R
flows through the device.
Dr. Tauseef Tauqeer
7.2: Thyristor Characteristics

12
Forward voltage drop from 0.5 to 2V
Triggered by a gate pulse of few mA.
Switching time 10 s to 400 s
After turn-on, the gate has no effect in turning off.
Have di/dt (up to 1000A/s) and dv/dt (1000V/s) limitations.
Thyristors available up to 6000 V, 6000 A.
Low cost, high efficiency, and high voltage and current capability.
Dr. Tauseef Tauqeer
There are Various methods to
turn on the Thyristor. Gate Current
is the most practical one.
If the thyristor is forward biased,
the injection of gate current by
applying positive gate voltage
between the gate and the cathode
terminals turns on the thyristor.
As the gate current is
increased, the forward blocking
voltage is decreased.
Figure 7.7: Effect of Gate current
on the forward blocking voltage
7.4: Thyristor Turn ON

Dr. Tauseef Tauqeer
The time delay known as turn on time, t
on
is defined as the time
interval between 10% of steady state gate current (0.1 I
G
) and
90% of the steady state thyristor on-state current (0.9 I
T
).
Figure 7.8: Turn ON
characteristics
t
on
= t
d
+ t
r
,
=delay time + rise time
t
d
is defined as the time
interval between 10% of gate
current and 10% of thyristor
on-state current.
t
r
is the time required for the
anode current to rise from
10% on-state current to 90%
of on-state current.
7.4: Thyristor Turn ON
Dr. Tauseef Tauqeer
7.4: Thyristor Turn ON

15
The following should be considered in designing the gate
control circuit
1. The gate signal should be removed after the thyristor
is turned on. A continuous gating signal would
increase the power loss in the gate junction.
2. There should be no gate signal when the thyristor is
reverse biased; otherwise the thyristor may fail due
to an increased leakage current.
3. The width of the gate pulse t
G
must be longer than
the time required for the anode current to rise to the
Latching current value I
L
. In practice, the pulse width
t
G
is normally made more than the turn-on time of
the thyristor.
Dr. Tauseef Tauqeer
7.5: Thyristor Turn OFF

16
A Thyristor that is in the on state, can be
turned off by reducing the forward current to
a level below the holding current I
H
. There
are various techniques for turning off
(commutation techniques) a thyristor.
In all the commutation techniques, the anode current is maintained
below the holding current for a sufficient long time so that all the
excess carriers in the four layers are swept out or recombined.
Due to two outer pn-junctions, J
1
and J
3
, the turn-off characteristics
would be similar to that of a diode, exhibiting reverse recovery time
t
rr
, and peak reverse recovery current I
RR
.

Dr. Tauseef Tauqeer
7.5: Thyristor Turn OFF
time ion recombinat
current recovery reverse
=
=
rc
rr
t
t
17
rc rr q
t t t + =
Turn-off time,
In line-commutated converter circuit where the input voltage is
alternating, a reverse voltage appears across the thyristor
immediately after the forward current goes through the zero value.
This reverse voltage accelerates the turn-off process by sweeping
out the excess carriers from the pn-junctions J
1
and J
3.

Dr. Tauseef Tauqeer
7.5: Thyristor Turn OFF
rc rr q
t t t + =
18
Turn-off time,
The inner pn-junction J
2
requires a time known as recombination time t
rc
to
recombine excess carriers. A negative reverse voltage would reduce this
recombination time. t
rc
is dependent on the magnitude of the reverse
voltage.
The turn off time t
q
is the sum of reverse recovery time t
rr
and recombination
time t
rc
. At the end of turn-off, a depletion layer develops across junction J
2

and the thyristor recovers its ability to withstands forward voltage. In all the
commutation techniques, a reverse voltage is applied across the thyristor
during the turn-off process.
Dr. Tauseef Tauqeer
7.5: Thyristor Turn OFF
19
The turn off time t
q
is the minimum value of time interval between
the instant when the on-state current has decreased to zero and the
instant when the thyristor is capable of withstanding forward voltage
without turning on. t
q
depends on the peak value of on-state current
and instantaneous on state voltage.
Reverse recovery charge Q
RR
is the amount of charge that has to be
recovered during turn-off process. Its value is determined from the
area enclosed by the path of reverse recovery current. The value of
Q
RR
depends on the rate of fall of on-state current and the peak
value of on-state current before turn-off. Q
RR
causes corresponding
energy loss within the device.

Dr. Tauseef Tauqeer
20
The manufacturer use various gate structures to
control di/dt, turn on time, and turn off time.
Thyristor can be easily turned on with a short pulse.
For turning off they require special drive circuitry or
special internal structure to aid in the turn-off process.
There are several versions of thyristors with turn-off
capability and the goal of any new device is to improve
the turn-off capability.
With the emergence of new devices with both turn-on
and turn-off capability, the device with just the turn-on
capability is referred to as Conventional Thyristor or
jus the Thyristor.
Other members of the thyristor or silicon-controlled
rectifier (SCR) family have other names based on
acronyms.
7.6: Thyristor Types
Dr. Tauseef Tauqeer
7.6: Thyristor Types
21
1) Phase-controlled thyristor (or SCR)
2) Bidirectional phase-controlled thyristor (BCT)
3) Fast switching thyristor (or SCR)
4) Light-activated silicon-controlled rectifier (LASCR)
5) Bidirectional triode thyristor (TRIAC)
6) Reverse-conducting thyristor (RCT)
7) Gate turn-off thyristor (GTO)
8) FET-controlled thyristor (FET-CTH)
9) MOS turn-off thyristor (MTO)
10)Emitter turn-off (control) thyristor (ETO)
11)Integrated gate-commutated thyristor (IGCT)
12)MOS-controlled thyristor (MCT)
13) Static Induction Thyristor (SITH)
Dr. Tauseef Tauqeer
Controlled Rectifier
In diode rectifier, the DC voltage at the output is fixed and can
not be controlled and thus called non-controlled rectifier
In Controlled Rectifier, the output DC voltage is adjustable
Phase controlled thyristors are used
The output voltage of the thyristor rectifier is varied by
controlling the delay or firing angle of thyristors
A phased control rectifier can be turned on by applying a short
pulse to the gate and turned off by natural line commutation
In case of highly inductive load, it is turned off by firing
another thyristor of the rectifier during the negative cycle of
the input voltage
Examples: DC Welders, DC Motor Drives, Battery Charging,
DC Power Supply etc.

Dr. Tauseef Tauqeer 22
( )
( )
( )
( )
2 2
( )
1
sin
2
1 cos
2
1
sin
2
1 sin 2
2 2
o dc m
m
o dc
o dc
o rms m
m
V V d
V
V
I
R
V V d
V
t
o
t
o
u u
t
o
t
u u
t
o
t o
t
=
= +
=
=
| |
= +
|
\ .
}
}
Single Phase Half Wave Rectifier (1/3)
Load is purely resistive, R
Dr. Tauseef Tauqeer 23
Single Phase Half Wave Rectifier (2/3)
Load is purely / highly inductive, L
Average voltage across inductor is zero
From to , the energy will be stored in inductor
Beyond , Ldi/dt becomes negative and forcing the
thyristor to remain on
-ev Ldi/dt will be equal to +ve Ldi/dt
The duration during the positive and negative cycle will e
the same i.e. - for +ve cycle and 2-- for ev cycle
So the thyristor conducts from to 2-
Dr. Tauseef Tauqeer 24

Dr. Tauseef Tauqeer 25
Freq=50 Hz Cycle
11.78msec
Angel Calculations
10msec=180deg
11.78msec=212deg
212-180=>32.14deg
Maths
= tan
1

= 32.14deg

=
2
+ ()
2

Z=5.904 Ohm
=

with lag
311/5.904=52.7A
V
L
Vs

V
R
I
R,L
V1
VSINE R1
5
D1
DIODE
VRload
C
u
r
r
e
n
t
V
1
(
+
)
L1
10mH
L
1
(
1
)
Single Phase Half Wave Rectifier
RL load (3/3)
Single Phase Full Wave Rectifier
Dr. Tauseef Tauqeer 26
RL load
( )
( )
( )
2 2
( )
( )
( )
2
sin
2
2
cos
2
sin
2
2
o dc m
m
o dc
o dc
o rms m
m
s
o rms
o rms
V V d
V
V
I
R
V V d
V
V
V
I
R
t
o
t
o
u u
t
o
t
u u
t
=
=
=
=
= =
=
}
}
If =0 then Vdc=2V
m
/
If =/2 then Vdc=0
If = then Vdc=-2V
m
/
So, V
dc
=+ve for 0< < /2
And, V
dc
=-ve for /2 < <