MOS FIELD EFFECT TRANSISTOR

DESCRIPTION
The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2357: RDS(on) = 0.9 (VGS = 10 V, ID = 3.0 A)
2SK2358: RDS(on) = 1.0 (VGS = 10 V, ID = 3.0 A)
Low Ciss Ciss = 1050 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 Package
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (2SK2357/2358) VDSS 450/500 V
Gate to Source Voltage VGSS 30 V
Drain Current (DC) ID(DC) 6.0 A
Drain Current (pulse)* ID(pulse) 24 A
Total Power Dissipation (Tc = 25 C) PT1 35 W
Total Power Dissipation (Ta = 25 C) PT2 2.0 W
Channel Temperature Tch 150 C
Storage Temperature Tstg 55 to +150 C
Single Avalanche Current** IAS 6.0 A
Single Avalanche Energy** EAS 17 mJ
* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
2SK2357/2SK2358
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
1994
DATA SHEET
Document No. TC-2498
(O. D. No. TC-8046)
Date Published November 1994 P
Printed in Japan
Drain
Body
Diode
Gate
Source
10.0 0.3
0.7 0.1
2.7 0.2
4.5 0.2
1
5
.
0

0
.
3
3.2 0.2
2.5 0.1
0.65 0.1
1.3 0.2
1.5 0.2
2.54 2.54
3

0
.
1
1
2
.
0

0
.
2
1
3
.
5

M
I
N
.
4

0
.
2
1. Gate
2. Drain
3. Source
1 2 3
PACKAGE DIMENSIONS
(in millimeters)
MP-45F (ISOLATED TO-220)
2SK2357/2SK2358
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS(on) 0.7 0.9 VGS = 10 V 2SK2357
0.8 1.0 ID = 3.0 A 2SK2358
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 3.0 VDS = 10 V, ID = 3.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS 100 VGS = 30 V, VDS = 0
Input Capacitance Ciss 1050 VDS = 10 V
Output Capacitance Coss 200 VGS = 0
Reverse Transfer Capacitance Crss 26 f = 1 MHz
Turn-On Delay Time td(on) 14 ID = 3.0 A
Rise Time tr 9 VGS(on) = 10 V
Turn-Off Delay Time td(off) 56 VDD = 150 V
Fall Time tf 14 RG = 10 RL = 50
Total Gate Charge QG 27 ID = 6.0 A
Gate to Source Charge QGS 5.5 VDD = 400 V
Gate to Drain Charge QGD 12 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 IF = 6.0 A, VGS = 0
Reverse Recovery Time trr 300 IF = 6.0 A, VGS = 0
Reverse Recovery Charge Qrr 1.5 di/dt = 50 A/s
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
VDD
L
RG = 25
50
PG
VGS = 20 - 0 V
RG
RG = 10
D.U.T.
RL
VDD PG.
0
t
VGS
t = 1 s
Duty Cycle 1 %
VGS
Wave
Form
ID
Wave
Form
ID
0
0
10 %
10 %
90 %
90 %
10 %
90 %
ID
VGS (on)
td (off) td (on)
ton toff
tf tr
VGS

VDD
BVDSS
IAS
ID
VDS
Starting Tch
D.U.T.
Test Circuit 3 Gate Charge
D.U.T.
RL
VDD
50
IG = 2 mA
PG.
UNIT

V
S
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2SK2357/2SK2358
3
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40 60 100 120 140 160
20
40
60
80
100
Tc - Case Temperature - C
d
T

-

P
e
r
c
e
n
t
a
g
e

o
f

R
a
t
e
d

P
o
w
e
r

-

%
0 20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20 40 60 80 100 120 140 160
Tc - Case Temperature - C
P
T

-

T
o
t
a
l

P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n

-

W
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0 4 8 12 16
VDS - Drain to Source Voltage - V
I
D

-

D
r
a
i
n

C
u
r
r
e
n
t

-

A
10
8
6
2
FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
10 100 1000
VDS - Drain to Source Voltage - V
I
D

-

D
r
a
i
n

C
u
r
r
e
n
t

-

A
0.1
1.0
P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n

L
i
m
i
t
e
d
1
0

m
s
R
D
S
(o
n
)
L
i
m
i
t
e
d
(
a
t

V
G
S

=

1
0

V
)
ID (DC)
ID (pulse)
1
0
0



s
Tc = 25 C
Single Pulse
P
W

=

1
0



s
Pulsed
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0
VGS - Gate to Source Voltage - V
Ta = 25 C
25 C
75 C
Pulsed
10
50
0.05
0.1
I
D

-

D
r
a
i
n

C
u
r
r
e
n
t

-

A

50
40
30
20
10
125 C
1
5 10 15
80
1
0
0

m
s
1

m
s
4
6 V
8 V
10 V
VGS = 20 V
2SK2357/2SK2358
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
1
0.1
10 100 1 m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
r
t
h
(
c
h
-
c
)

(
t
)

-

T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

R
e
s
i
s
t
a
n
c
e

-

C
/
W
R
D
S
(
o
n
)

-

D
r
a
i
n

t
o

S
o
u
r
c
e

O
n
-
S
t
a
t
e

R
e
s
i
s
t
a
n
c
e

-

3.0
2.0
0
DRAIN TO SOURCE ON-STATE
RESITANCE vs. DRAIN CURRENT
1.0 100
ID - Drain Current - A
10
V
G
S
(
o
f
f
)

-

G
a
t
e

t
o

S
o
u
r
c
e

C
u
t
o
f
f

V
o
l
t
a
g
e

-

V
1.0
0
50 0 50 100 150
Tch - Channel Temperature - C
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
TC = 25 C
Single Pulse
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1.0
10
I
y
f
s
I

-

F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e

-

S
ID - Drain Current - A
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10 20
VGS - Gate to Source Voltage - V
R
D
S
(
o
n
)

-

D
r
a
i
n

t
o

S
o
u
r
c
e

O
n
-
S
t
a
t
e

R
e
s
i
s
t
a
n
c
e

-

Pulsed
30 0

1.5
1.0
0.5
100 1.0
2.0
3.0
4.0
VDS = 10 V
ID = 1 mA
1.0
Ta = 25 C
25 C
75 C
125 C
VDS = 10 V
Pulsed
0.01
Rth(ch-c) = 3.57 C/W
Rth(ch-a) = 62.5 C/W
ID = 3 A
ID = 6 A
2SK2357/2SK2358
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.6
1.2
0.8
0.4
0
50 0 50 100 150
VGS = 10 V
Tch - Channel Temperature - C
R
D
S
(
o
n
)

-

D
r
a
i
n

t
o

S
o
u
r
c
e

O
n
-
S
t
a
t
e

R
e
s
i
s
t
a
n
c
e

-

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE
10
1.0
0.5
0.1
1.5
VSD - Source to Drain Voltage - V
I
S
D

-

D
i
o
d
e

F
o
r
w
a
r
d

C
u
r
r
e
n
t

-

A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
t
r
r

-

R
e
v
e
r
s
e

R
e
c
o
v
e
r
y

D
i
o
d
e

-

n
s
ID - Drain Current - A
0 10 20 30 40
400
300
200
100
VDS
VGS
ID = 6 A
V
D
S

-

D
r
a
i
n

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e

-

V
Qg - Gate Charge - nC
V
G
S

-

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e

-

V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
14
12
10
8
6
4
2
0
Pulsed
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1 000
100
5
1 100 1000
VDS - Drain to Source Voltage - V
C
i
s
s
,

C
o
s
s
,

C
r
s
s

-

C
a
p
a
c
i
t
a
n
c
e

-

p
F
VGS = 0
f = 1.0 MHz
1.0 0
0.05
50
10
5 000
Ciss
VDD = 400 V
250 V
125 V
ID = 6 A
10 V VGS = 0
10
3 A
SWITCHING CHARACTERISTICS
1000
100
10
t
d
(
o
n
)
,

t
r
,

t
d
(
o
f
f
)
,

t
f

-

S
w
i
t
c
h
i
n
g

T
i
m
e

-

n
s
0.1 100
ID - Drain Current - A
VDD = 150 V
VGS = 10 V
RG = 25
td(off)
td(on)
1.0 10
0.5
tf
tr
Coss
Crss
800
600
400
1.0 10 100
di/dt = 50 A/ s
VGS = 10 V

200
0
2SK2357/2SK2358
6
SINGLE AVALANCHE CURRENT vs
INDUCTIVE LOAD
100
10
1.0
100 1.0 m 10 m 100 m
I
A
S

-

S
i
n
g
l
e

A
v
a
l
a
n
c
h
e

C
u
r
r
e
n
t

-

A
SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE
20
15
10
25
E
A
S

-

S
i
n
g
l
e

A
v
a
l
a
n
c
h
e

E
n
e
g
y

-

m
J
5
50 75 100 125
ID(peak) = IAS
RG = 25
VGS = 20 V 0 V
VDD = 150 V
IAS = 6.0 A
E
A
S
=
1
7
m
J

150 175
EAS = 17 mJ
RG = 25
VDD = 150 V
VGS = 20 V 0
Starting Tch = 25C
L - Inductive Load - H Starting Tch - Starting Channel Temperature - C
2SK2357/2SK2358
7
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
2SK2357/2SK2358
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
[MEMO]