STP1806

N-CHANNEL 60V - 0.015 W - 50A TO-220

STripFET POWER MOSFET
TYPE
STP1806

VDSS

RDS(on)

ID

60 V

< 0.018 W

50 A

TYPICAL RDS(on) = 0.015 W

EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED

3
1

DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

TO-220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE

Ordering Information
SALES TYPE
STP1806

MARKING
P1806

PACKAGE
TO-220

PACKAGING
TUBE

ABSOLUTE MAXIMUM RATINGS

Symbol
VDS
VDGR
VGS
ID
ID
IDM()
Ptot
dv/dt (1)
EAS (2)
Tstg
Tj

Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kW)
Gate- source Voltage
Drain Current (continuous) at TC = 25C
Drain Current (continuous) at TC = 100C
Drain Current (pulsed)
Total Dissipation at TC = 25C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature

() Pulse width limited by safe operating area.

November 2004

Value
60
60
20
50
35
200
110
0.73
7
350

Unit
V
V
V
A
A
A
W
W/C
V/ns
mJ

-55 to 175

(1) ISD 50A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX

(2) Starting T j = 25 oC, ID = 25A, VDD = 30V

Rev.0.1

1/9

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STP1806
THERMAL DATA
Rthj-case
Rthj-amb
Tl

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

Max
Max

1.36
62.5
300

C/W
C/W
C

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol

Parameter

Test Conditions

Drain-source
Breakdown Voltage

ID = 250 A, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125C

IGSS

Gate-body Leakage
Current (VDS = 0)

VGS = 20 V

V(BR)DSS

Min.

Typ.

Max.

60

Unit
V

1
10

A
A

100

nA

ON (*)
Symbol

Parameter

Test Conditions

VGS(th)

Gate Threshold Voltage

VDS = VGS

RDS(on)

Static Drain-source On
Resistance

VGS = 10 V

ID = 250 A

Min.

Typ.

Max.

Unit

0.015

0.018

Typ.

Max.

Unit

ID = 27.5 A

DYNAMIC
Symbol

Parameter

Test Conditions

gfs (*)

Forward Transconductance

VDS = 15 V

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

ID = 27.5 A

Min.

18

1530
300
105

pF
pF
pF

2/9

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STP1806
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)
tr

Turn-on Delay Time

Rise Time

ID = 27.5 A
VDD = 30 V
RG = 4.7 W
VGS = 10 V
(Resistive Load, Figure 3)

16
8

Qg
Qgs
Qgd

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

VDD= 48 V ID= 55 A VGS= 10V

44.5
10.5
17.5

60

nC
nC
nC

Typ.

Max.

Unit

ns
ns

SWITCHING OFF
Symbol
td(off)
tf

Parameter
Turn-off Delay Time
Fall Time

Test Conditions

Min.

ID = 27.5 A
VDD = 30V
RG = 4.7W,
VGS = 10 V
(Resistive Load, Figure 3)

36
15

ns
ns

SOURCE DRAIN DIODE

Symbol

Parameter

ISD
ISDM ()

Source-drain Current
Source-drain Current (pulsed)

VSD (*)

Forward On Voltage

ISD = 55A

Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD = 55 A
di/dt = 100A/s
Tj = 150C
VDD = 30 V
(see test circuit, Figure 5)

trr
Qrr
IRRM

Test Conditions

Min.

Typ.

VGS = 0
75
170
4.5

Max.

Unit

50
200

A
A

1.5

V
ns
nC
A

(*) Pulse width [ 300 s, duty cycle 1.5 %.

() Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

3/9

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STP1806
Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

4/9

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STP1806
Normalized Gate Threshold Voltage vs Temperature

Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics

Normalized Breakdown Voltage vs Temperature.

5/9

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STP1806
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

6/9

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STP1806

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7/9

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STP1806

Revision History
Date

Revision

Tuesday 16 November
2004

0.2

Description of Changes
updating marking

8/9

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STP1806

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners.

2004 STMicroelectronics - All Rights Reserved

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