EE3

1. Thin-film integrated circuit refers to film thickness of approximately 1um.

2. Classifications of ICs according to functions include linear, digital and microwave. Which of
these classes greatl relies on h!rid technolog" Microwave ICs
3. The term #monolithic$ is derived from the %reek words monos and lithos which res&ectivel
mean single and stone (single stone)
'. (evices or com&onents such as transistors and diodes are mostl fa!ricated in ICs !
diffusion
). In most &lanar ICs, what do ou call the laer that &rotects the surface of the chi& from
e*ternal contaminants" Oxide layer
+. Which comes first in the &lanar &rocess of fa!ricating ICs" Crystal growth
,. - techni.ue used for o!taining a relativel large single crstal from a semiconductor
material. the &rocess consists essentiall of di&&ing a tin seed crstal into a cruci!le of
molten mass of the same su!stance and then slowl withdrawing it while rotating. Czochralsi
method.
/. In IC fa!rications, the su!strate is usuall &roduced ! Czochralsi process.
0. The &rocess used to grow a laer of single-crstal semiconductor as an e*tension of the
e*isting crstal wafer of the same material. epitaxial
11. In fa!ricating ICs using &lanar technolog, what is the !asic method of adding im&urities"
!iffusion
11. The introduction of im&urities into a semiconductor inside a hot furnace during IC
fa!rication. !iffusion
12. - method of introducing im&urities in IC fa!rication wherein the a&&ro&riate ions are carried
! an accelerating !eam. Ion"implantation
13. Which method of do&ing that is used in &roducing narrow regions in an IC" Ion"implantation
1'. T&e of diffusion in which the im&urit concentration at the semiconductor surface is
maintained at a constant level throughout the diffusion ccle. Constant"source diffusion
1). -n alternative method rather than diffusion in introducing im&urities into a semiconductor
wherein the im&urities are made to &enetrate into the wafer ! an ion !eam. Ion"implantation.
1+. - method of &roducing integrated circuit ! &hotogra&hing a &attern of the circuit on a
suita!le light-sensiti2ed surface of semicon-ductor and chemicall etching awa unwanted
&ortions of the surface. #hotolithographic process.
1,. In IC fa!rication, the &hoto-sensitive emulsion coated at the wafer surface to !e masked is
called photoresist
1/. The removal of unmasked 3ilicon (io*ide 43i526at the wafer surface in IC fa!rication etching
10. The removal of the remaining &hotoresist in the wafer after etching during IC fa!rication.
$tripping.
21. Covering or coating on a semiconductor surface to &rovide a masked area for selective etching
or de&osition masing
21. In most IC fa!rications, how is the connection &attern !etween com&onents defined" %y masing
22. What do ou call the &rocess of interconnecting the com&onents in an IC during fa!rication"
Metallization
23. The conducting material that is mostl used to interconnect com&onents on chi&s during
metalli2ation &rocess. &luminum
2'. Is the &rocess of making the semiconductor chi& or wafer insensitive to an contaminations
that might cause drift of &arameter or &remature failure. #assivation
2). 7assivation of semiconductor wafer ! forming a laer of an insulating o*ide on the surface
oxide passivation
2+. In monolithic ICs, electrical isolation !etween devices on the same su!strate is achieved !
fa!ricating them in an electricall isolated region known as isolation pocets or tu's.
2,. Which of the isolation techni.ues in IC fa!rication that is commonl used" (unction isolation
2/. Isolation of devices in integrated circuit ! forming a silicon o*ide laer around each
devices is known as o*ide insulation, and this is a good e*am&le of dielectric isolation
20. -n o&erational am&lifier must have at least how man usa!le terminals" 1) terminals
31. What t&e of am&lifier commonl used at the out&ut stage of o&-am&s" Complementary amplifier
31. the transistor configuration used at the out&ut com&lementar stage of most o&-am&s common"
collector
32. the stage followed ! the out&ut com&lementar in o&-am&s functional !lock diagram level
shifter
33. what is the &ur&ose of a level shifter in o&-am&s" *o set and+or ad,ust the output voltage to
zero when input signal is zero.
3'. 7rimaril, o&-am&s are o&erated with !i&olar &ower su&&l, however, we can also use single
&olarit &ower su&&l ! generating a reference voltage to ground.
3). Calculate the C899 of an o&-am& having a common-mode gain of 11 and a differential-mode gain
of 111,111. -.
3+. The non-inverting and inverting in&uts of an o&-am& have an in&ut voltage of 1.)m: and 1.1m:,
res&ectivel. If the o&-am& has a common-mode voltage gain of 11 and a differential mode gain
of 11111, what is its out&ut voltage" /..10/1
3,. What is the ma*imum out&ut voltage swing of an o&-am&" 21sat to 31sat
3/. The u-,'1 o&-am& has a C899 of 01d; and a differential-mode gain voltage am&lification of
211,111. What is the o&-am&<s common-mode voltage gain" 4.50)
30. The current needed at the in&ut of an o&-am& to o&erate it normall input 'ias current
'1. Ideal o&-am& re.uires no in&ut current, !ut real o&-am& needs a ver small in&ut current
called in&ut !ias current. -t !oth in&uts, the !ias currents have a slight difference. What
do ou call this difference" Input offset current
'1. the change in in&ut offset current due to tem&erature change input offset current drift
'2. the reason wh a slight difference !etween the in&ut !ias current occurs in o&-am&s is due to
the unsmmetrical circuit com&onent &arameters. This unsmmetrical condition also &roduces a
difference in in&ut voltage called what" Input threshold voltage
'3. ideall, the out&ut voltage of an o&-am& is 2ero when there is no in&ut signal, however, in
&ractical circuits, a small out&ut voltage a&&ears, this voltage is known as output offset
voltage
''. calculate the out&ut offset voltage of an inverting am&lifier using o&-am& with an in&ut
offset current of 11n-. the current is having an in&ut resistance of 11k-ohm and a feed!ack
resistance of 111k-ohm. 1..m1
'). an o&-am& inverting am&lifier uses a feed!ack resistor of 111k-ohm and in&ut resistor of 11k-
ohm. If the o&-am&s in&ut offset voltage is 2.1m:, a&&ro*imate the am&lifier out&ut offset
voltage due to this in&ut offset voltage. 00m1
'+. the out&ut offset voltage of an o&-am& is due to the in&ut offset current and voltage. If 1m:
is due to the in&ut offset current and 22m: due to the in&ut offset voltage, what is the
total out&ut offset voltage of the o&-am&" 05m1
',. how will ou minimi2e the out&ut offset voltage due to the in&ut offset current of an o&-am&"
%y installing a 'ias"current"compensating resistor
'/. the a&&ro*imate value of the !ias-current com&ensating resistor in o&-am& circuits is= e6ual
to the parallel com'ination of the input and feed'ac resistors
'0. in o&-am& analsis, the in&ut offset voltage is re&resented ! a 'attery
)1. what is the effect of the in&ut offset voltage to the out&ut voltage if the o&-am& has no
feed!ack element" Causes the out&ut to saturate either towards &ositive or negative.
)1. >ow can we minimi2e the effect of the in&ut offset current and in&ut offset voltage at the
out&ut offset voltage" %y maing the feed'ac resistance small
)2. -n o&-am& is wired as an inverting am&lifier with an in&ut and feed!ack resistances of 1k-ohm
and 111k-ohm res&ectivel. When the in&ut signal is set to 2ero, the out&ut was found to have
an offset voltage of 111m:. Calculate the in&ut offset voltage. 1..m1
)3. What is the most effective wa of minimi2ing the out&ut offset voltage of an o&-am&" %y
properly using and ad,usting the offset"null terminals
)'. In large signal dc-am&lifiers using o&-am&, which &arameter has the least effect on its
&erformance" !rift
)). ?or ac-am&lifiers using o&-am&s what &arameters can affect its &erformance. $lew rate and
fre6uency response
)+. If an o&-am& is used to am&lif small ac-signals, what &arameter should ou greatl consider
to ensure !etter &erformance" 7re6uency response
),. What do we mean ! internall com&ensated o&-am&s" o&-am&s with internal fre.uenc
com&ensation ca&acitor to prevent oscillation
)/. The fre.uenc at which the o&en-loo& gain of an o&-am& is 1.,1, times its value at ver low
fre.uenc. %rea fre6uency
)0. The reduction of o&-am&s gain due to increasing o&erating fre.uenc. 8oll"off
+1. ?re.uenc at which the voltage gain of o&-am& reduces to unit. 9nity"gain 'andwidth product
+1. -n o&-am& has a s&ecified transient res&onse rise time of 1.3us, calculate its unit-gain
!andwidth. 1.14:M;z
+2. What is the ma*imum signal fre.uenc that can !e used in an o&-am& having a s&ecified slew
rate of 1.)v@usec" The ma*imum out&ut voltage desired is ):. 14;z.
+3. What must !e the slew rate of an o&-am& to !e used in order to &rovide an undistorted out&ut
voltage of 11: at a fre.uenc of 111,111 rad@sec. 1..1+usec
+'. -n o&-am& 2ero crossing detector without hsteresis. ;as no feed'ac.
+). What is the noise gain of o&-am&s" 128f+8i
++. In most ac-am&lifiers using o&-am&s, the feed!ack resistor is shunted with a ver small
ca&acitance, what is its &ur&ose" *o minimize high"fre6uency noise
+,. -&&ro*imate the noise-gain of an inverting adder using o&-am&s if it has five in&uts six(4)
+/. What is true a!out the e*ternal fre.uenc-com&ensation ca&acitor" *he lower its value< the
wider its 'andwidth.
+0. T&ical value of the e*ternal fre.uenc-com&ensating ca&acitor of o&-am&s. 5.."5. u7
,1. The magnitude of the o&-am&s in&ut offset voltage !efore it can !e classified as a low-in&ut
offset voltage o&-am&. ..0m1.
,1. 5&-am&s whose internal transistor !iasing can !e controlled e*ternall are categori2ed as
programma'le"op"amps
,2. The most &o&ular o&-am& &ackages are the metal can, /-&in (I7, and the 38T. Which of these
corres&onds to T5-00" Metal can
,3. (ual-in-line or (IA &ackage is designated as *O"114
,'. ?or high-densit ICs, involving man o&-am&s, what &ackaging is most suita!le" $M*
,). - reactive device used in controlling electrical &ower ! using two windings on a common iron
core. The control winding is su&&lied with small dc-current which causes the reactance of a
large ac-winding to change accordingl. $atura'le reactor
,+. a satura!le reactor with regenerative feed!ack. Magnetic amplifier
,,. an electronic switch that has the highest single-device current ca&acit and can withstand
overloads !etter. ignitrons
,/. which &ower control switching method that greatl generates 9?I or E8I and is therefore
limited to low-fre.uenc a&&lications" #hase"control
,0. a converter that changes ac-voltage fre.uenc from one to another. Cycloconverter
/1. in electronic converters, what signal is mostl used to trigger the active device" $6uare
wave
/1. which of the trigger diodes has the highest-holding voltage" %idirectional"trigger diac
/2. general term of electronic devices used to control or trigger large-&ower switching devices.
%rea"over devices
/3. a !reak-over device that is !asicall a diode. *rigger diode
/'. the voltage decreased across the -node 4-6 and cathode 4B6 of an 3C9 from non-conducting
state to conducting state. %rea'ac voltage.
/). -n 3C9 rated 11- is used in the controlling switch in a circuit &owered ! )1 :dc. When the
3C9 fires 5C, its -node 4-6 to Cathode 4B6 voltage was o!served to !e 2:. Calculate the
!reak!ack voltage of the 3C9.
/+. Dse of heat sinks, forced air, and water cooling are e*am&les of e*ternal cooling in 3C9s and
other devices. Which of these is the onl recommended to !e used for the largest &ower
dissi&ating device" =ater cooling
/,. In connecting two 3C9s in series, during #5??$ state, the voltage source must !e &ro&erl
shared !etween them, !ut due to devices< differences, there might !e une.ual voltages across
each 3C9. >ow do we e.uali2e these voltages" %y using a 'locing"e6ualizing resistor
//. - circuit used for voltage e.uali2ation during 5C-5?? switching action of 3C9s in series.
$nu''er circuit
/0. in controlling electrical &ower using &hase control method with 3C9@triac !eing the active
device, what do we call the &eriod of the ccle !efore the device switches to conduction"
7iring delay angle
01. how man times &er second does an 3C9 is turned 5C and 5?? when it is o&erated in a full-wave
&hase control at a line fre.uenc of +1 >2" 10. times (7=)
01. a three terminal device that !ehaves roughl like 3C9s, e*ce&t that it can conduct current in
either direction when at 5C. $%$
02. a thristor that is ver similar to an 3C9 e*ce&t that it has a low voltage and current
ratings. It is ver tem&erature sta!le, and is therefore suita!le to !e used as a triggering
device. $9$
03. silicon unilateral switches 43D36, generall have a !reakover voltage of /:, however, this
value can !e altered ! normall connecting a 2ener diode. >ow is the diode installed"
!iode>s cathode to $9$>s gate and diode>s anode to $9$>s cathode
0'. a silicon unilateral switch 43D36 has a forward !reakover voltage of /:. a 2ener diode is
connected !etween its gate and cathode terminals with the diode<s cathode at 3D3<s gate. If
the 2ener voltage is 3.0:, what is the new forward !reakover voltage of the device" )./.1
0). relate the magnitude of the dc-out&ut voltage to the ac in&ut rms voltage of a full-wave
rectifier. 1dc?..@.1rms
0+. determine the dc-voltage of a full-wave !ridge rectifier when the in&ut ac-voltage is 2':rms.
01.41
0,. ri&&le factor of a full-wave rectifier. ..)-
0/. - 21:-dc &ower su&&l was found to have a ri&&le voltage of 2:rms when su&&ling 1.)am&s
load. Calculate its &ercent ri&&le. 1...A
00. Which &ower su&&l filter gives the smallest ri&&le voltage" Multi"section BC"filter
111. Which regulator is the most inefficient" $hunt
111. 3am&ling circuit used in most voltage regulators. 1oltage"divider networ
112. a 12:dc &ower su&&l is regulated using ,/1)IC and is used in TTA circuits that
re.uire a 1.2 am&s current. (etermine the dro&out voltage of the sstem. :1
113. a load draws 1- current from a 11-: regulated &ower su&&l. Calculate the &ower
dissi&ated ! the regulator if it has an in&ut voltage of 1+:. 4 watts
11'. what three-terminal IC regulator that has a varia!le negative voltage out&ut" 55:
11). in a three-terminal adEusta!le &ositive voltage regulator 431,6, what is the !andga&
voltage !etween the out&ut terminal and adEustment terminal" 1.0/1
11+. t&ical ri&&le reEection of most three-terminal voltage regulators. ..1A
11,. the three-terminal voltage regulators, such as the ,/** series has a t&ical current
rating of 1.) am&eres. If a high current is re.uired, sa 31 am&eres, how will ou make
modifications for this regulator in order to &rovide the re.uired current" %y the use of
external pass transistor
11/. active devices used in switching regulators ma e*&erience large over-currents during
conduction 4turn-on-state6 and large over-voltages during turn-off. These e*cessive currents
and voltages ma cause distraction or damage of the active devices. >ow do we &rotect them"
%y installing a snu''er circuit.
110. In switching 3C9s to on-state, the current rises ra&idl and some-times causes damage
to the device. 5ne wa of &reventing this to ha&&en is ! connecting an inductance in series
with the load. If for e*am&le, an 3C9 with a di@dt rating of 111-@us and is used in 221 :ac,
what should !e the value of the inductance to !e used" 0.)-u;
111. When 3C9s switches to #off$ from on-state, a voltage across the anode and cathode
rises ra&idl, this voltage change creates a voltage gradient internall and ma cause the
3C9 to trigger again. To &revent this unscheduled firing, a ca&acitor ma !e installed across
the 3C9. ?or an 3C9 with a ma*imum forward-!locking voltage of :?;8F)11: and a ma*imum dv@dt
of 2):@us,calculate the ca&acitance needed to &revent unscheduled firing if the 3C9 has a
load of 11-ohm. 0u7
111. 5ne of the maEor concerns in &ower electronics is to clean-u& or sha&e-u& the utilit-
su&&l voltage 4the wall outlet 221:@+1>26 from distur!ances such as overvolt, undervolt,
voltage s&ikes and harmonic distortions. What circuit is used for this" #ower conditioners
112. Barnaugh ma& is the most commonl used method in sim&lifing ;oolean e*&ression or
logical functions. In this method onl 1<s and 1<s are entered into the ta!le, while map"
entered varia'le techni6ue includes varia!le into the ta!le.
113. - suita!le method in sim&lifing ;oolean e*&ression when the sstem deals with more
than si* varia!les. Cuine"mcclusey ta'ular method
11'. If the fan out of a logic gate is not enough, a@an 'uffer should !e used.
11). Is considered as a controller inverter. DO8
11+. Bnown as universal gates EO8 and E&E!
11,. The num!er of C-C(-gates needed to form an 59-gate. 5
11/. ?li&-flo& that changes state ever time the in&ut is triggered. Master slave flip"flop
110. T&e of memor that is formed ! a series of magnetic !u!!les at the su!strate 'u''le
memory
121. (igital device similar to that of a 958 and whose internal connections of logic arras
can !e &rogrammed ! &assing high current through fusa!le links. #B& and #&B
121. - circuit used for selecting a single out&ut from multi&le in&uts universal logic
module (9BM)
122. What is formed when the com&lemented out&ut of the last stage of a shift register is
fed !ack to the in&ut of the first stage" *wisted ring counter
123. 9efers to the a!ilit of a logic circuit to withstand noise su&erim&osed on its in&ut
signal. Eoise immunity
12'. The num!er of logic gates of the same famil that can !e connected to the in&ut of a
&articular gate without degrading the circuit &erformance. 7an"in
12). - logic circuit famil with a su&&l voltage of 2):. and are generall used in
industr where machiner causes electrical noise and large &ower line transients to
occur.;B!*B
12+. in a transistor-transistor-logic 4TTA6, if the !ase collector Eunction of a transistor
is clam&ed with a 3chottk-diode it !ecomes 3chottk TTA. What is the significance of having
this diode" It increases the switching speed
12,. 7853 are generall su&&lied with a voltage u& to 1/ 1
12/. C853 can !e interlaced to C853 ! &roviding a pull"up resistor
120. a digital IC whose out&ut transistor has no internal &ull-u& resistor. Open"collector
configuration
131. in digital ICs, such as !uffers and registers, what out&ut configuration is used if
the are intended for #!using$ " tri"state output
131. in TTA ICs, which in&ut configurations gives a high-in&ut im&edance at !oth logic
states 4>I%> and A5W state6" $u'strate pnp input
132. what is the &ur&ose of internal clam&ing diodes at the in&ut of a logic circuit" *o
minimize negative ringing effects
133. in TTA ICs with more than one gates availa!le, sometimes not all gates are used. >ow
will ou handle these unused gates" 7orce the output to go ;IF;
13'. how will ou handle unused in&uts in a logic gate@logic IC" #ull them up or down<
depending on circuit function