MITSUBISHI IGBT MODULES

CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE

TC Measured
Point
A
E B
F G H U
J
CM

C2E1 E2 C1
G2 G2

D 2 - Mounting
C Holes
K (6.5 Dia.) V
G1 E1

L Description:
M N Mitsubishi IGBT Modules are de-
3-M5 Nuts
O O
signed for use in switching applica-
TAB#110 t=0.5
tions. Each module consists of two
P Q P S
IGBTs in a half-bridge configuration
with each transistor having a re-
R verse-connected super-fast recov-
T
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
E2 ment.
G2 Features:
u Low Drive Power
C2E1 E2 C1 u Low VCE(sat)
u Discrete Super-Fast Recovery
E1 Free-Wheel Diode
G1 u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Outline Drawing and Circuit Diagram Applications:
u AC Motor Control
Dimensions Inches Millimeters Dimensions Inches Millimeters u Motion/Servo Control
A 3.7 94.0 M 0.47 12.0 u UPS
B 3.15±0.01 80.0±0.25 N 0.53 13.5 u Welding Power Supplies
C 1.89 48.0 O 0.1 2.5 Ordering Information:
D 0.94 24.0 P 0.63 16.0 Example: Select the complete
E 0.28 7.0 Q 0.98 25.0 module number you desire from
F 0.67 17.0 R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
the table - i.e. CM150DU-12H is a
600V (VCES), 150 Ampere Dual
G 0.91 23.0 S 0.3 7.5
IGBT Module.
H 0.91 23.0 T 0.83 21.2
J 0.43 11.0 U 0.16 4.0 Current Rating VCES
Type Amperes Volts (x 50)
K 0.71 18.0 V 0.51 13.0
CM 150 12
L 0.16 4.0

Sep.2000
 MITSUBISHI IGBT MODULES

CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Symbol Ratings Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 150 Amperes
Peak Collector Current ICM 300* Amperes
Emitter Current** (Tc = 25°C) IE 150 Amperes
Peak Emitter Current** IEM 300* Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 600 Watts
Mounting Torque, M5 Main Terminal – 2.5~3.5 N·m
Mounting Torque, M6 Mounting – 3.5~4.5 N·m
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts
IC = 150A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge QG VCC = 300V, IC = 150A, VGE = 15V – 300 – nC
Emitter-Collector Voltage** VEC IE = 150A, VGE = 0V – – 2.6 Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 13.2 nF
Output Capacitance Coes VCE = 10V, VGE = 0V – – 7.2 nF
Reverse Transfer Capacitance Cres – – 2 nF
Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 150A, – – 100 ns
Load Rise Time tr VGE1 = VGE2 = 15V, – – 350 ns
Switch Turn-off Delay Time td(off) RG = 4.2Ω, Resistive – – 300 ns
Times Fall Time tf Load Switching Operation – – 300 ns
Diode Reverse Recovery Time** trr IE = 150A, diE/dt = -300A/µs – – 160 ns
Diode Reverse Recovery Charge** Qrr IE = 150A, diE/dt = -300A/µs – 0.36 – µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.21 °C/W
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.47 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W

Sep.2000
 MITSUBISHI IGBT MODULES

CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
300 300 5
Tj = 25oC 14 13 VCE = 10V VGE = 15V

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR CURRENT, IC, (AMPERES)

VGE = 20V Tj = 25°C Tj = 25°C
240 240 Tj = 125°C 4 Tj = 125°C
15

COLLECTOR-EMITTER
12

180 180 3
11

120 120 2
10

60 9 60 1
8
0 0 0
0 2 4 6 8 10 0 4 8 12 16 20 0 80 160 240 320
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)
10 103 102
Tj = 25°C Tj = 25°C VGE = 0V
SATURATION VOLTAGE, VCE(sat), (VOLTS)

CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8
IC = 300A
COLLECTOR-EMITTER

101 Cies
6
IC = 150A
102
4 Coes
100

2
Cres
IC = 60A

0 101 10-1
0 4 8 12 16 20 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
104 103 102 20
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

VCC = 300V di/dt = -300A/µsec IC = 150A

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

VGE = ±15V Tj = 25°C

REVERSE RECOVERY TIME, trr, (ns)

RG = 4.2 Ω 16
103 Tj = 125°C VCC = 200V
SWITCHING TIME, (ns)

tf VCC = 300V
trr 12
td(off)
102 102 101
td(on)
Irr 8
tr
101
4

100 101 100 0

101 102 103 101 102 103 0 100 200 300 400
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

Sep.2000
 MITSUBISHI IGBT MODULES

CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT) (FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)

10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101
101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Zth = Rth • (NORMALIZED VALUE)

Zth = Rth • (NORMALIZED VALUE)

Per Unit Base = Rth(j-c) = 0.21°C/W Per Unit Base = Rth(j-c) = 0.47°C/W
100 100

10-1 10-1 10-1 10-1

10-2 10-2 10-2 10-2

10-3 10-3 10-3 10-3

10-5 10-4 10-3 10-5 10-4 10-3
TIME, (s) TIME, (s)

Sep.2000