BASIC ELECTRONIC DEVICES AND CIRCUITS

(Core Subject)

Course Code: 10B11EC211 Semester: 2
nd
Semester, B. Tech (ECE, CS, IT)
Credits: 4 Contact Hours: L-3, T-1,P-0


Course Overview
This course introduces the characteristics of electronic devices and their use in fundamental electronic
circuits.
The course is designed to keep real-world applications of the electronic circuits, while keeping the
mathematical rigor low level.

Course Objectives
The primary objective of this course is to:
1. Introduce the working, the characteristics and the applications of electronic devices.
2. Provide an understanding of working of basic electronic circuits.
3. Introduce the analysis techniques of the electronic circuits to enable the students to design
simple circuits.
4. Build the foundation necessary for future studies.

Course Outcomes
Upon successful completion of this course the students would have developed following skills/abilities:
1. Recognize the purpose served by basic electronic circuits.
2. Check whether the given circuit would give expected output.
3. Ability to design simple electronic circuits to meet a practical requirement.


Course Contents
Unit Topics References
(chapter number,
page no. etc)
Lec
tur
es
1.
Semiconductors
Intrinsic semiconductors (germanium and silicon), Charge
carriers (electrons and holes), Energy-band diagrams,
Extrinsic semiconductors (N-type and P-type and their
representation), Effect of temperature on conductivity. [2L]

[1, Ch. 3 (55-77)];
[2, Ch. 1 (3-10]

2
2.
Semiconductor Diodes
a) Unidirectional property, Formation of depletion layer,
Drift current, Diffusion current, PN-junction with no
bias, with forward bias and with reverse bias, Transition
and diffusion capacitances, Varactor diode. [2L]
b) V-I characteristics, Comparison of Si and Ge diodes,
Temperature effects, Diode resistance (static and
dynamic), Diode equation, Ideal diode, Circuit model of
a diode [2L]
[1, Ch. 4 (78-89)];
[2, Ch. 1 (10-28)]

4
3
Diode Applications
a) Block diagram of dc power supply, Half-wave and full-
wave (centre tap and bridge) rectifiers, PIV rating of
diode, Performance of half-wave and full-wave
rectifiers, Shunt capacitor filter, Its ripple factor. [2L]
b) Series and Parallel Clippers, Limiters, Clampers,
Voltage Multipliers. [2L]
[1,Ch. 4 (89-107)];
[2, Ch.2 (74-80)];

[2, Ch. 2 (81-91)]
4
4
Breakdown Diodes
a) Zener and avalanche breakdown, Zener diode,
Temperature coefficient, Analysis of Zener voltage
regulator, Other applications. [2L]
[1, Ch. 4 (112-
113)]; [2, Ch. 1
(37-40)]
2
5
Bipolar Junction Transistor (BJT
a) BJT Structure, Working of a transistor, Transistor
current equation, Collector reverse saturation current,
DC alpha of a transistor. [1L]
b) The three configurations, CB and CE input and output
characteristics, Comparison between three
configurations, Basic CE amplifier, DC load line. [2L]
c) Need of biasing a transistor, Choice of operating point,
Selection of operating point, Need for bias stabilization,
Fixed bias circuit, Saturation point, Collector-to-base
bias circuit, Emitter-feedback bias circuit, Emitter-bias
circuit, Voltage divider bias circuit. [2L]
[1, Ch. 5 (136-
174)];
[1, Ch. 7 (216-
241)];
[2, Ch. 3 (131-
147)];
[2, Ch. 4 (163-
204)]

5
6
Field-Effect Transistors (FETs)
a) Junction Field-Effect Transistor (JFET) : Basic
construction, Pinch-off voltage, Drain saturation
current, Output and transfer characteristics, Voltage
controlled resistor, JFET parameters, JFET small-signal
amplifier, Its AC analysis. [3L]
b) Metal Oxide Semiconductor Field Effect Transistor
(MOSFET) :(No numerical problems)
Depletion MOSFET : Structure, Working principle,
Circuit symbol, Output characteristics.
Enhancement MOSFET : Structure, Formation of
channel, Working principle, Circuit Symbol, Output
characteristics; CMOS and VMOS; Comparison
between JFET, MOSFET and BJT. [2L]
[1, Ch. 6 (196-
213)];
[2, Ch. 5 (245-
278)]

5
7
Transistor Amplifier
a) Meaning of amplification, A practical CE amplifier,
Need of DC analysis before AC analysis, Role of
capacitors. [2L]
b) Hybrid parameters of a BJT, Circuit model, Simplified
circuit model, Equivalent circuit method of AC
analysis. [2L]
[1, Ch. 8 (259-
281)];
[2, Ch. 8 (389-
399)]
4
8
Feedback in Amplifiers
Basic concepts of feedback, Types of feedback, Voltage
gain of feedback amplifier. Effects of negative feedback on
amplifier characteristics. [2L]
[1, Ch. 12 (381-
399];
[2, Ch. 17 (821-
828)]
2
9
Sinusoidal Oscillators
Need of oscillators, Types of oscillators, Positive feedback
to produce oscillations, The starting voltage, Tuned
collector oscillator, Hartley oscillator, Colpitts oscillator,
RC-phase shift oscillator, Wein bridge oscillator, Crystal
oscillator. [3L]
[1, Ch. 13 (404-
425)];
[2, Ch. 17 (837-
849)]
3
10
Operational Amplifiers
Schematic symbol of op-amp, Ideal op-amp, Inverting
amplifier, Virtual ground, Noninverting amplifier, Adders,
Subtractor, Voltage Follower. [2L]
[2, Ch. 13 (675-
687)]
2
11
Number Systems
Decimal or Denary system, Binary system, Binary-to-
decimal conversion, Decimal-to-binary conversion, Octal
number system, Decimal-to-octal conversion, Octal-to-
binary conversion, Binary-to-octal conversion,
Hexadecimal number system, Hex-to-decimal conversion,
Decimal-to-hex conversion, Hex-to-binary conversion,
Binary-to-hex conversion, Hexadecimal-octal conversion.
[2L]
[3, Ch. 1 (1-12)] 2
12
Logic Gates
Three basic operations of Boolean algebra, OR gate, AND
gate, NOT gate, NOR and NAND gates, Concept of
universal gate, Realization of logic functions using
universal gates (NAND, NOR), XOR and XNOR gates.
[2L]
[3, Ch2 (53-59)] 2
13
Boolean Theorems
a) Single variable theorems, Multivariable theorems
(Commutative, Associative, Distributive laws), De
Morgans theorems, Complement of an Expression,
Evaluation of Boolean expressions, Synthesis of
Boolean expressions. [2L]
b) Canonical forms (SOP from, POS form), Three-
variable Canonical expressions, Interconversions of
canonical forms, Simplification of Boolean
expressions using algebraic methods, Minimization
using Karnaugh map, Dont care conditions. [3L]
[3, Ch. 2 (35-49)];
[3, Ch. 3 (64-89)]
5
Total Periods
42


















Evaluation Scheme

Mid Term 30 Marks
End Term 45 Marks
Internal Assessment 25 Marks
Total 100 Marks



Internal Assessment breakup
Assignment 5 Marks
Quiz 5 Marks
Attendance 5 Marks
Class Response 5 Marks
Self Assessment of T-1 5 Marks
Total 25 Marks

Text and Reference Books
1. [Text] N N Bhargava, Basic Electronics and Linear Circuits McGraw Hill Education, 2nd
Editon, 2013.
2. [Text] Boylstad and Nashelsky, Electronic Devices and Circuit Theory, PHI, 8e, 2001.
3. [Text] Morris Mano, Digital Design, PHI, 3e, 2002.