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Assignment 3

1. A abrupt Si p-n junction has dopant concentration NA = 1015 cm3 and ND = 2X1015 cm3 . Calculate
built in potential, depletion width, peak and average electric field at equilibrium and 5V reverse bias.
Comment on the results.
2. In a p-n junction under thermal equilibrium, both the electron and hole currents are zero seperately.
Prove that this is possible only whenDp


3. A Si p-n junction has dopant concentration NA = 1017 cm3 on p-side and built-in voltage of 0.8 V at
300 K, and 0.785 V at 310 K. Calculate the dopant concentration on n-side, and change in the band
gap energy per degree change in temperature T. Use Eg= 1.12 eV at 300 K.
4. Show that the electron and hole concentration product remains n2i in space charge region.
5. Calculate contact potential for a Si p-n junction at 300 K for NA = 5X1013 and NA = 1019 , with
ND = 1014 , 1015 , 1016 , 1017 , 1018 , and 1019 and plot it vs ND .
6. The doping distribution in a sample is given by (ND NA ) = ax (f or d x d), and 0 (otherwise).
Assume that the electric field vanishes at x = d. Derive the expression for the electric field for
(d x d), and sketch it. What is the expression for the maximum electric field in terms of a and
d? Determine the expression for the built-in potential across the junction in terms of a and d, and
sketch it.
7. Show that the peak electric field in the depletion region is controlled by the doping of lightly doped
side of the junction.
8. For an ideal silicon p-n abrupt junction with NA = 1017 cm3 and ND = 1015 cm3 (a) calculate built
in potential at 250, 300, 350, 400, 450 and 500 K and plot it versus T. Comment on the results.
9. In a p+ n junction reverse biased at 10V, the capacitance is 10pF. If the doping of the n side is
doubled and the reverse bias changed to 80V, what is the capacitance?
10. A one-sided p+ n Si junction at 300 K is doped with NA = 1019 cm3 . Design the junction so that
Cj = 0.85 pF at reverse bias Vr = 4.0 V.
11. A one-sided abrupt p+ n Si junction at 300 K with NA = 1019 cm3 and ND = 1016 cm3 is at
thermal equilibrium. Plot (a) electron and hole concentration in space charge region, and (b) Diffusion
and drift components of current for electron and hole.
12. For a for Si doped with 2X1015 /cm3 donor impurity and having 4X1014 EHP/cm3 created uniformly
at t=0. Assume that n = p = 5s. Calculate the recombination coefficient r . Assume that this
value of r applies when the GaAs sample is uniformly exposed to a steady state optical generation
rate gop = 1019 EHP/cm3 s. Find the steady state excess carrier concentration n = p.
13. A Si sample with 1015 /cm3 donors is uniformly optically excited at room temperature such that
1019 /cm3 electron-hole pairs are generated per second. Find the separation of the quasi-Fermi levels
and the change of conductivity upon shining the light. Electron and hole lifetimes are both 10s.
Dp = 12 cm2 /s.
14. Light is incident on a silicon bar doped with 1016 cm3 donors, creating 1021 cm3 s1 electron hole
pairs uniformly throughout the sample. There are 1015 cm3 bulk recombination centers at Ei with
electron and hole capture cross sections of 1014 cm2 .(a) Calculate the steady-state hole and electron
concentrations with the light turned on. (b) At time t = 0 the light is turned off. Calculate the time
response of the total hole density and find the lifetime. The thermal velocity is 107 cm.s1 , and there
is no current flowing.

15. For a 2-cm long doped Si bar (ND = 1016 cm3 ) with across-sectional area=0.05cm2 , what is the
current if we apply 10V across it? If we generate 1020 electron hole pairs per second/ cm3 uniformly
in the bar and the lifetime n = p = 100s, what is the new current? Assume the low-level r doesnt
change for high-level injection. If the voltage is then increased to 100,000V, what is the new current?
Assume p = 500cm2 /V s, n = 1070cm2 /V s