EE 320L Electronics I LABORATORY

LABORATORY REPORT

Laboratory Experiment No. #9

Bipolar Junction Transitor (BJT)

Written by: Jordan D. Ulmer

Date Performed: 11/18/2014

Lab Partners: Josh Behnken

Lab Section 1, Tue,9:30 am-12:30 pm

Instructor: Mr. Mettler

Teaching Assistant: Roya Naderi

Jordan Daniel Ulmer

EE-320-L SDSU FA2014

Introduction:

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This laboratory is an introduction into the functionality of Bipolar Junction Transistors and their
modes of operation. This lab also covers the effect of cascading BJTs which are operating in
the Active Region.

Background:
Bipolar Junction Transistors (BJTs) are essentially two back to back diodes. BJTs have the
three distinct terminals, the Collector, Base, and Emitter - shown in the figure below.
Base

Collector

N-Type

P-Type

N-Type

Semi-Conductor

Semi-Conductor

Semi-Conductor

Excess

Excess holes

Emitter

Excess

Figure 1:(Background) A Fundamental Perspective Of An NPN BJT

Base

Collector

Emitter

Figure 2:(Background) NPN-BJT Similar To Two Diodes In Series

PreLab:
Not Applicable.

Time of print: 10:16 PM 11/19/2014

Jordan Daniel Ulmer

EE-320-L SDSU FA2014

Procedure:

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A.1 We first labeled, the Collector, Base and Emitter currents on an NPN BJT. We Also derived
the transistor parameters and in terms of these currents.
A.2 We then derived the gain (Transfer Function) for a Darlington Pair transistor configuration
(See The Figure Below)

.
Figure 3:(Procedure) The Darlington Configuration Used In Part A
B.1 We then assembled a single [2N4401] NPN BJT (See The Figures Below)

Figure 4:(Procedure) BJT Measurement Setup For Part B

Time of print: 10:16 PM 11/19/2014

Jordan Daniel Ulmer

EE-320-L SDSU FA2014

Page | 4

Figure 5:(Procedure) Values Used For BJT Measurement Setup For Part B
B.2 We then analyzed the use of and from a systems level perspective.
B.3 We then increased from 0 V to where = 0.5 mA, measuring and at a regular
interval of 0.5 V. We also determined the transistors mode of operation for each
successive measurement.
B.4 We then measured the Base Current and calculated the transistors characteristic and
values (Assuming Linearity In The Active Region Of Operation). We then validated the
calculated and by predicting and measuring the resultant Emitter Current .
B.5 To further validate the calculated and we then refer to the datasheet of the [2N4401]
NPN BJT.
B.6 We next set = 4 and = 2 and measured , , furthermore
determining the transistors region of operation.
B.7 We next set = 3 and = 5 and measured , , furthermore
determining the transistors region of operation.
C.1 We then assembled a Darlington Pair configuration to validate the gain derived in part A(See
Figure Below).
C.2 With = 1.2 and = 3 we then measured 1 , 1 , 2 , 2 and calculated 1 and 2
(Assuming Linearity In The Active Region Of Operation)
C.3 We then calculated the overall gain of the system from our measured input 2 and output 1
currents.
C.4 We then calculated the predicted gain from our derived gain equation in part A and
compared this predicted gain to our experimental gain.

Time of print: 10:16 PM 11/19/2014

Jordan Daniel Ulmer

EE-320-L SDSU FA2014

Results:

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B.3 With the single transistor configuration (See Figure 3 Above), we first increased from
0 V to where = 0.5 mA, measuring and at a regular interval of 0.5 V. We also
determined the transistors mode of operation for each successive measurement (Included
In Results For Brevity).
Table 1: (Results/Analysis) Single NPN BJT : Effect Of Due To An Increasing
( = )

Source

Base-Emitter Base-Collector

Voltage (V) Voltage (mV)

Collector

Voltage (V)

Current ()

4.6

0.5

450

4.06

550

3.56

100

1.5

574

3.03

215

587

2.49

329

2.5

595

1.96

449

2.77

598

-1.69

508

BJT Region Of Operation

Cutoff
0
Cutoff
0
Active
> 0.5 and < 0
Active
> 0.5 and < 0
Active
> 0.5 and < 0
Active
> 0.5 and < 0
Active
> 0.5 and < 0

B.4 We then measured the transistors Base Current and Emitter Current , setting =
2.77 V and = 5 V.
2.2 A
510.2 mA
B.6 We next set = 4 and = 2 and measured , .
3.5 A
Time of print: 10:16 PM 11/19/2014

Jordan Daniel Ulmer

EE-320-L SDSU FA2014

529 mV

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462 mV
B.7 We next set = 3 and = 5 and measured , .
0 A
300 mV
7.37 V
C.2 With = 1.2 and = 3 we then measured 1 , 1 , 2 , 2 (All Currents In A for
comparison):
1 0.2 A
1 49 A
2 37 A
2 8400 A

Time of print: 10:16 PM 11/19/2014

Jordan Daniel Ulmer

Analysis:

EE-320-L SDSU FA2014

Page | 7

A.1 We first labeled, the Collector, Base and Emitter currents , , respectively on an NPN
BJT. We Also derived the transistor parameters and in terms of these currents.

Figure 6:(Analysis) Collector, Base and Emitter Currents On An NPN BJT

( , ) =

( , ) =

() =

A.2 We then derived the gain (Transfer Function) for a Darlington Pair transistor configuration
(See Figure 2 Above)
=

2 2 1
=
= 2 (1 + 1)
1
1

B.2 We then analyzed the use of and from a systems level perspective.
or rather, the AC+DC 1 partition of this transistor configuration , acts as the input signal.
is clearly the input resistance and is notably very large 1M
B.3 We then increased from 0 V to where = 0.5 mA, measuring and at a regular
interval of 0.5 V. We also determined the transistors mode of operation for each
successive measurement (See Table 1).
B.4 We then measured the Base Current and calculated the transistors characteristic and
values (Assuming Linearity In The Active Region Of Operation). We then validated the
calculated and by predicting and measuring the resultant Emitter Current .

DC is considered as well as AC because there is no Emitter by pass capacitor present in this Transistor
configuration.

Time of print: 10:16 PM 11/19/2014

Jordan Daniel Ulmer

EE-320-L SDSU FA2014

0.508 mA
.4 =
230.9
0.0022 mA
.4 =

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( .4 + 1)
0.996
.4

.4

0.508 mA
0.51018 mA
0.996

0.5102 mA
B.5 To further validate the calculated and we then refer to the datasheet of the [2N4401]
NPN BJT.
100 < < 300
100 < 230.9 < 300
B.6 We next set = 4 and = 2 and measured
3.5 A ; 529 mV ; 462 mV
Because > and > the transistor is operating in the Saturation region.
B.7 We next set = 3 and = 5 and measured , .
0 A ; 300 mV ; 7.37 V
Because > and < the transistor is operating in the Active region (Where
was too small to measure , but should be NON-zero).
C.2 With = 1.2 and = 3 we measured currents in the Darlington Pair configuration:
1 0.2 A ; 1 49 A ; 2 37 A ; 2 8400 A
And then calculated 1 and 2 by assuming linearity in the active region of operation.
1 =
2 =

1 49 A

245
1 0.2 A

2 8400 A

227
2
37 A

C.3 We then calculated the overall gain of the system from our measured input 2 and output 1
currents.
=

2 8400 A
A

42000
1
0.2 A
A

C.4 We then calculated the predicted gain from our derived gain equation in part A and
compared this predicted gain to our experimental gain.
Time of print: 10:16 PM 11/19/2014

Jordan Daniel Ulmer

EE-320-L SDSU FA2014

Page | 9
2

=
= 2 (1 + 1) 227(245 + 1)
1

Because the output current was so Jumpy I trust the predicted values more than the
experimental values and so the percent error becomes:
% =

55842 42000

. %

55842

Time of print: 10:16 PM 11/19/2014

Jordan Daniel Ulmer

Conclusions:

EE-320-L SDSU FA2014

Page | 10

B.4 The calculated characteristic and values for the BJT yielded surprisingly accurate
results, considering that they were derived from the Base Current , where we assumed
linearity in the transistors active region of operation. We successfully validated the
calculated and of a single BJT by predicting and measuring the resultant Emitter
Current with less than a % error.
B.5 We took additional steps to further validate the calculated and parameters we by
referring to the datasheet of the [2N4401] NPN BJT. Unremarkably, our calculated
value fell into the range which the datasheet specified (100 < 230.9 < 300) . This
however was far from a conclusive validation, because the range of possible values is
so large.
C.2 The calculated 1 and 2 for the Darlington Pair Transistor Configuration yielded
1 245 and 2 227 both which are in the range which the datasheet designated
(100 < < 300)
C.3-4 After then calculating the predicted gain from our derived gain equation in part A we then
compared this predicted gain to our experimental gain.
Because the output current 2 was unstable, I trust the predicted values more than the
experimental values (But I Should Do A Mathematical Sensitivity Analysis To Know
This For Sure) and so the percent error becomes:
% =

55842 42000

. %

55842

Time of print: 10:16 PM 11/19/2014

Jordan Daniel Ulmer

Comments:

EE-320-L SDSU FA2014

Page | 11

I am still unclear on the exact thresholds which specify the Cutoff, Active and Saturation regions
of a Bipolar Junction Transistor. Here is a chart which details my current understanding:

Table 2: (Comments) The Regions Of Operation For An NPN-BJT

BJT Region Of
Operation
Forward Active

Saturation

Cutoff

Reverse Active

Indications

Implications

> 0.5 V

Collector Current flows from

< 0.4 V

And small Base Current flows from

> 0.5 V

Somehow Similar To The Triode Region Of A

> 0.4 V

MOSFET?

> 0.5 V
0 A

No Current Flows Through The Device!

< 0.5 V

Emitter Current flows from

> 0.4 V

And a small Base Current flows from

NOTE: Conventional Current Is Implied, Electrons Flow Would Be Opposite Of Hole Flow
In other words Its like there are two diodes connected in series
(Also See Figure 2)
Base
Collector

Emitter

Figure 7:(Comments) PNP-BJT Similar To Two Diodes In Series

Time of print: 10:16 PM 11/19/2014

Jordan Daniel Ulmer

Appendix:

EE-320-L SDSU FA2014

Page | 12

Table of Contents
EE 320L Electronics I LABORATORY ............................. 1
Introduction:................................................ 2
Background: ................................................. 2
PreLab: ..................................................... 2
Procedure: .................................................. 3
Results: .................................................... 5
Analysis: ................................................... 7
Conclusions:................................................ 10
Comments: .................................................. 11
Appendix: .................................................. 12
Figures: .................................................. 12
Tables: ................................................... 12

Figures:
Figure 1:(Background) A Fundamental Perspective Of An NPN BJT ............... 2
Figure 2:(Background) NPN-BJT Similar To Two Diodes In Series ................. 2
Figure 3:(Procedure) The Darlington Configuration Used In Part A ................. 3
Figure 4:(Procedure) BJT Measurement Setup For Part B ....................... 3
Figure 5:(Procedure) Values Used For BJT Measurement Setup For Part B ............ 4
Figure 6:(Analysis) Collector, Base and Emitter Currents On An NPN BJT ............ 7
Figure 7:(Comments) PNP-BJT Similar To Two Diodes In Series ................. 11

Tables:
Table 1: (Results/Analysis) Single NPN BJT : Effect Of Due To An Increasing
( = ).................................................... 5
Table 2: (Comments) The Regions Of Operation For An NPN-BJT ................ 11

Time of print: 10:16 PM 11/19/2014