N-Channel MOSFET 500V, 20.0A, 0.

27
Features

General Description
.

VDS
= 500V
ID
= 20.0A
RDS(ON) 0.27

These N-channel MOSFET are produced using advanced

MagnaChips MOSFET Technology, which provides low onstate resistance, high switching performance and excellent
quality.

@ VGS = 10V
@ VGS = 10V

Applications
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.

Power Supply
HID
Lighting

S
D G
G G

TO-247

Absolute Maximum Ratings (Ta = 25oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

500

Gate-Source Voltage

VGSS

30

20

12.5

TC=25 C

Continuous Drain Current

Pulsed Drain Current

ID

TC=100 C

(1)

IDM

80

245

1.96

W/ C

24.5

mJ

dv/dt

4.5

V/ns

EAS

950

mJ

TJ, Tstg

-55~150

Symbol

Rating

RJA

40

RJC

0.51

TC=25 C

Power Dissipation

Derate above 25 C

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(1)

EAR

(3)

Single Pulse Avalanche Energy

PD

(4)

Junction and Storage Temperature Range

* ID limited by maximum junction temperature

Thermal Characteristics
Characteristics
(1)

Thermal Resistance, Junction-to-Ambient

(1)

Thermal Resistance, Junction-to-Case

Jun. 2011. Ver 1.2

Unit
o

C/W

MagnaChip Semiconductor Ltd.

MDQ18N50G N-Channel MOSFET 500V

MDQ18N50G

Part Number

Temp. Range

MDQ18N50GTP

-55~150 C

MDQ18N50GTH

Package

Packing

RoHS Status

TO-247

Tube

Pb Free

TO-247

Tube

Halogen Free

-55~150 C

Electrical Characteristics (Ta =25oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics
Drain-Source Breakdown Voltage

BVDSS

ID = 250A, VGS = 0V

500

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

3.0

5.0

Drain Cut-Off Current

IDSS

VDS = 500V, VGS = 0V

Gate Leakage Current

IGSS

VGS = 30V, VDS = 0V

100

nA

RDS(ON)

VGS = 10V, ID = 10A

0.22

0.27

gfs

VDS = 30V, ID = 10A

13

48

12

Drain-Source ON Resistance
Forward Transconductance

Dynamic Characteristics
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

15

Input Capacitance

Ciss

2430

Reverse Transfer Capacitance

Crss

10

Output Capacitance

Coss

302

Turn-On Delay Time

td(on)

87

tr

80

174

45

20

1.4

375

ns

4.2

Rise Time
Turn-Off Delay Time
Fall Time

td(off)

VDS = 400V, ID = 18A, VGS = 10V

(3)

VDS = 25V, VGS = 0V, f = 1.0MHz

VGS = 10V, VDS = 250V, ID = 18A,

(3)
RG = 25

tf

Drain-Source Body Diode Characteristics

Maximum Continuos Drain to
IS
Source Diode Forward Current
Source-Drain Diode Forward
VSD
Voltage
Body Diode Reverse Recovery
trr
Time
Body Diode Reverse Recovery
Qrr
Charge

IS = 20A, VGS = 0V
IF = 18A, dl/dt = 100A/s

(3)

nC

pF

ns

Notes :
1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C.
3. ISD 18.0A, di/dt200A/us, VDDBVdss, Rg =25, Starting TJ=25C
4. L=4.28mH, IAS=20A, VDD=50V, Rg =25, Starting TJ=25C

Jun. 2011. Ver 1.2

MagnaChip Semiconductor Ltd.

MDQ18N50G N-Channel MOSFET 500V

Ordering Information

40

0.3

RDS(ON) [ ]

ID,Drain Current [A]

0.4
Notes
1. 250 Pulse Test
2. TC=25

Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
=15.0V

20

VGS=10.0V

0.2

VGS=20V

0.1
10

20

10

15

VDS,Drain-Source Voltage [V]

25

30

35

40

45

50

55

60

ID,Drain Current [A]

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.1 On-Region Characteristics

1.2

3.0

Notes :

BVDSS, (Normalized)
Drain-Source Breakdown Voltage

Notes :

RDS(ON), (Normalized)
Drain-Source On-Resistance

20

1. VGS = 10 V
2. ID = 10 A

2.5

2.0

1.5

1.0

0.5

50

100

1.1

1.0

0.9

0.8
-50

0.0
-50

1. VGS = 0 V
2. ID = 250

150

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with

Temperature

Fig.4 Breakdown Voltage Variation vs.

Temperature

100
Notes :
100

IDR
Reverse Drain Current [A]

ID [A]

* Notes ;
1. VDS=30V

10

150

25

10

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-Drain Voltage [V]

VGS [V]

Fig.5 Transfer Characteristics

Jun. 2011. Ver 1.2

10

1
0.0

1
3

1. VGS = 0 V
2. 250 Pulse Test

Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature
3

MagnaChip Semiconductor Ltd.

MDQ18N50G N-Channel MOSFET 500V

60

MDQ18N50G N-Channel MOSFET 500V

6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd

Coss

Note : ID = 18A

10

VGS, Gate-Source Voltage [V]

5000
100V

250V

Capacitance [pF]

400V

4000

Ciss

3000

Notes ;

2000

1. VGS = 0 V
2. f = 1 MHz

2
1000

Crss

0
0

10

20

30

40

0
0.1

50

Fig.7 Gate Charge Characteristics

10

Fig.8 Capacitance Characteristics

Operation in This Area

is Limited by R DS(on)

22

10 s
100 s

20

10

18

10 ms
100 ms
DC

16

ID, Drain Current [A]

ID, Drain Current [A]

1 ms
10

Single Pulse
TJ=Max rated
TC=25

14
12
10
8
6
4
2

10

10

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

-1

10

-1

10

10

10

0
25

50

VDS, Drain-Source Voltage [V]

75

100

125

150

TC, Case Temperature [ ]

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current vs. Case

Temperature

24000

10

single Pulse
RthJC = 0.51 /W
TC = 25

21000

15000

0.2

-1

10

Power (W)

Z JC(t),
Thermal Response

18000

D=0.5

0.1
0.05
0.02

Duty Factor, D=t1/t2

PEAK TJ = PDM * Z JC* R JC(t) + TC
R JC=0.51 /W

10

9000
6000

Notes :

0.01
-2

12000

3000

single pulse
-5

10

-4

10

-3

10

-2

10

-1

10

10

0
1E-5

10

t1, Rectangular Pulse Duration [sec]

1E-3

0.01

0.1

Pulse Width (s)

Fig.12 Single Pulse Maximum Power

Dissipation

Fig.11 Transient Thermal Response Curve

Jun. 2011. Ver 1.2

1E-4

MagnaChip Semiconductor Ltd.

TO-247

Dimensions are in millimeters, unless otherwise specified

L1

E2

D1

A2

b2

b1
b

E1

Dimension

Min(mm)

Max(mm)

4.70

5.31

A1

2.20

2.60

A2

1.50

2.49

0.99

1.40

b1

2.59

3.43

b2

1.65

2.39

0.38

0.89

20.30

21.46

D1

13.08

15.45

16.26

E1

13.06

14.02

E2

4.32

5.49

e
L

5.45BSC
19.81

20.57

L1

4.50

3.50

3.70

5.38

Jun. 2011. Ver 1.2

A1

6.20
6.15BSC

MagnaChip Semiconductor Ltd.

MDQ18N50G N-Channel MOSFET 500V

Physical Dimension

MDQ18N50G N-Channel MOSFET 500V

DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.

Jun. 2011. Ver 1.2

MagnaChip Semiconductor Ltd.