Académique Documents
Professionnel Documents
Culture Documents
27
Features
General Description
.
VDS
= 500V
ID
= 20.0A
RDS(ON) 0.27
@ VGS = 10V
@ VGS = 10V
Applications
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Power Supply
HID
Lighting
S
D G
G G
TO-247
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
VGSS
30
20
12.5
TC=25 C
ID
TC=100 C
(1)
IDM
80
245
1.96
W/ C
24.5
mJ
dv/dt
4.5
V/ns
EAS
950
mJ
TJ, Tstg
-55~150
Symbol
Rating
RJA
40
RJC
0.51
TC=25 C
Power Dissipation
Derate above 25 C
(1)
EAR
(3)
PD
(4)
Thermal Characteristics
Characteristics
(1)
Unit
o
C/W
MDQ18N50G
Part Number
Temp. Range
MDQ18N50GTP
-55~150 C
MDQ18N50GTH
Package
Packing
RoHS Status
TO-247
Tube
Pb Free
TO-247
Tube
Halogen Free
-55~150 C
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250A, VGS = 0V
500
VGS(th)
3.0
5.0
IDSS
IGSS
100
nA
RDS(ON)
0.22
0.27
gfs
13
48
12
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
15
Input Capacitance
Ciss
2430
Crss
10
Output Capacitance
Coss
302
td(on)
87
tr
80
174
45
20
1.4
375
ns
4.2
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
(3)
tf
IS = 20A, VGS = 0V
IF = 18A, dl/dt = 100A/s
(3)
nC
pF
ns
Notes :
1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C.
3. ISD 18.0A, di/dt200A/us, VDDBVdss, Rg =25, Starting TJ=25C
4. L=4.28mH, IAS=20A, VDD=50V, Rg =25, Starting TJ=25C
Ordering Information
40
0.3
RDS(ON) [ ]
0.4
Notes
1. 250 Pulse Test
2. TC=25
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
=15.0V
20
VGS=10.0V
0.2
VGS=20V
0.1
10
20
10
15
25
30
35
40
45
50
55
60
1.2
3.0
Notes :
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
Notes :
RDS(ON), (Normalized)
Drain-Source On-Resistance
20
1. VGS = 10 V
2. ID = 10 A
2.5
2.0
1.5
1.0
0.5
50
100
1.1
1.0
0.9
0.8
-50
0.0
-50
1. VGS = 0 V
2. ID = 250
150
50
100
150
200
100
Notes :
100
IDR
Reverse Drain Current [A]
ID [A]
* Notes ;
1. VDS=30V
10
150
25
10
0.2
0.4
0.6
0.8
1.0
1.2
VGS [V]
10
1
0.0
1
3
1. VGS = 0 V
2. 250 Pulse Test
60
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Note : ID = 18A
10
5000
100V
250V
Capacitance [pF]
400V
4000
Ciss
3000
Notes ;
2000
1. VGS = 0 V
2. f = 1 MHz
2
1000
Crss
0
0
10
20
30
40
0
0.1
50
10
22
10 s
100 s
20
10
18
10 ms
100 ms
DC
16
1 ms
10
Single Pulse
TJ=Max rated
TC=25
14
12
10
8
6
4
2
10
10
-1
10
-1
10
10
10
0
25
50
75
100
125
150
24000
10
single Pulse
RthJC = 0.51 /W
TC = 25
21000
15000
0.2
-1
10
Power (W)
Z JC(t),
Thermal Response
18000
D=0.5
0.1
0.05
0.02
10
9000
6000
Notes :
0.01
-2
12000
3000
single pulse
-5
10
-4
10
-3
10
-2
10
-1
10
10
0
1E-5
10
1E-3
0.01
0.1
1E-4
TO-247
L1
E2
D1
A2
b2
b1
b
E1
Dimension
Min(mm)
Max(mm)
4.70
5.31
A1
2.20
2.60
A2
1.50
2.49
0.99
1.40
b1
2.59
3.43
b2
1.65
2.39
0.38
0.89
20.30
21.46
D1
13.08
15.45
16.26
E1
13.06
14.02
E2
4.32
5.49
e
L
5.45BSC
19.81
20.57
L1
4.50
3.50
3.70
5.38
A1
6.20
6.15BSC
Physical Dimension
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.