DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N914; 1N916
High-speed diodes
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01

1996 Sep 03

Philips Semiconductors

Product specification

High-speed diodes

1N914; 1N916

FEATURES

DESCRIPTION

Hermetically sealed leaded glass

SOD27 (DO-35) package

The 1N914; 1N916 are high-speed switching diodes fabricated in planar

tecshnology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages. s

High switching speed: max. 4 ns

Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 100 V

handbook, halfpage
k

Repetitive peak forward current:

max. 225 mA.

MAM246

The diodes are type branded.

APPLICATIONS
High-speed switching.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

100

VR

continuous reverse voltage

75

IF

continuous forward current

75

mA

IFRM

repetitive peak forward current

225

mA

IFSM

non-repetitive peak forward current

t = 1 s

t = 1 ms

t=1s

0.5

see Fig.2; note 1

square wave; Tj = 25 C prior to
surge; see Fig.4

250

storage temperature

65

+200

junction temperature

175

Ptot

total power dissipation

Tstg
Tj

Tamb = 25 C; note 1

Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1996 Sep 03

mW

Philips Semiconductors

Product specification

High-speed diodes

1N914; 1N916

ELECTRICAL CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL

PARAMETER

CONDITIONS

VF

forward voltage

IF = 10 mA; see Fig.3

IR

reverse current

see Fig.5
VR = 20 V

Cd

trr

MAX.

UNIT

1000

mV

25

nA

VR = 75 V

VR = 20 V; Tj = 150 C

50

1N914

pF

1N916

pF

ns

diode capacitance

reverse recovery time

1N914

Vfr

MIN.

f = 1 MHz; VR = 0; see Fig.6

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.7

reverse recovery time

when switched from IF = 10 mA to

IR = 60 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.7

ns

forward recovery voltage

when switched from IF = 50 mA;

tr = 20 ns; see Fig.8

2.5

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length 10 mm

240

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 10 mm; note 1

500

K/W

Note
1. Device mounted on a printed circuit-board without metallization pad.

1996 Sep 03

Philips Semiconductors

Product specification

High-speed diodes

1N914; 1N916

GRAPHICAL DATA

MGD289

100

MBG464

600

handbook, halfpage

IF
(mA)

IF
(mA)

400
(1)

50

(2)

(3)

200

0
0

100

T amb ( C)

200

VF (V)

(1) Tj = 175 C; typical values.

(2) Tj = 25 C; typical values.
(3) Tj = 25 C; maximum values.

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

Fig.2

Maximum permissible continuous forward

current as a function of ambient
temperature.

Fig.3

Forward current as a function of forward

voltage.

MBG704

102
handbook, full pagewidth
IFSM
(A)

10

101
1

10

102

103

tp (s)

Based on square wave currents.

Tj = 25 C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Sep 03

104

Philips Semiconductors

Product specification

High-speed diodes

1N914; 1N916

MGD006

103
handbook, halfpage

MGD004

1.2

handbook, halfpage

IR
(A)

Cd
(pF)

102

1.0
(1)

(2)

(3)

10
0.8
1

0.6

101

102
0

100

Tj (oC)

0.4

200

(1) VR = 75 V; maximum values.

(2) VR = 75 V; typical values.
(3) VR = 20 V; typical values.

f = 1 MHz; Tj = 25 C.

Fig.5

Fig.6

Reverse current as a function of junction

temperature.

1996 Sep 03

10

VR (V)

20

Diode capacitance as a function of reverse

voltage; typical values.

Philips Semiconductors

Product specification

High-speed diodes

1N914; 1N916

handbook, full pagewidth

tr

tp
t

D.U.T.

10%

IF

R = 50
S

IF

SAMPLING
OSCILLOSCOPE

t rr
t

R = 50
i

V = VR I F x R S

MGA881

(1)

90%

VR

input signal

output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

1 k

450

I
90%

R S = 50

D.U.T.

OSCILLOSCOPE

V fr

R i = 50
10%
MGA882

t
tr

input
signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Sep 03

tp

output
signal

Philips Semiconductors

Product specification

High-speed diodes

1N914; 1N916

PACKAGE OUTLINE

handbook, full pagewidth

0.56
max
1.85
max

4.25
max

25.4 min

25.4 min

MLA428 - 1

Dimensions in mm.

Fig.9 SOD27 (DO-35).

DEFINITIONS
Data Sheet Status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Sep 03