IOE SYLLABUS for BEX - Electrical Engineering Material

ELECTRICAL ENGINEERING MATERIALS

EG 476 EE
Lecture : 3 Year : 1
Tutorial : 1 Part : B
COURSE OBJECTIVES:
To provide a basic understanding of the electric and magnetic properties of mate
rials used in electrical and electronics engineering.
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8

Theory of Metals: (6 hours)

Elementary quantum mechanical ideas
Free electron theory
Energy well model of a metal
Density of states function
The Fermi-Dirac distribution function
Thermionic emission
Work function
The Fermi level at equilibrium, contact potentials

2.0 Free Electron Theory of Conduction in Metals: (6 hours)

2.1 Thermal velocity of electrons at equilibrium
2.2 Lattice scattering, mean free time between collisions
2.3 Drift velocity of electrons in an electric field
2.4 Diffusion of electrons, diffusion coefficient, Einstein s relationship between
mobility and diffusion coefficients
2.5 Chemical and physical properties of common conducting materials such as Au,
Ag, Cu, Al, Mn, Ni, etc.
3.0
3.1
3.2
3.3

Conduction in Liquids and Gases: (2 hours)

Ionic conduction in electrolytes
Electrical conduction in gases
Arc discharges, electric breakdown

4.0 Dielectric Materials: (6 hours)

4.1 Macroscopic effects
4.2 Polarization, dielectric constant
4.3 Dielectric losses, frequency and temperature effects
4.4 Dielectric breakdown
4.5 Ferroelectricity and piezoelectricity
4.6 Properties of common dielectrics such as glass, porcelain, polyethylene, pvc
,
nylon, bakelite, rubber, mica, transformer oils, etc.
5.0 Magnetic Materials: (8 hours)
5.1 Ferromagnetism, ferrimagnetism, paramagnetism
5.2 Domain structure
5.3 Hysterisis loop, eddy current losses
5.4 Soft magnetic materials
5.5 Fe-si alloys, Ni-Fe alloys
5.6 Ferrites for high frequency transformers
5.7 Square loop materials for magnetic memory, relaxation oscillators
5.8 Hard magnetic materials such as carbon steels, Alnico alloys and barium ferr
ites
6.0
6.1
6.2
6.3
6.4
6.5

Semiconducting Materials: (12 hours)

Band structure of Group IV materials, energy gap
Density of states function
Fermi-Dirac distribution function
Hole and electron densities in an intrinsic crystal
Effective densities of states, intrinsic concentration

6.6 Fermi level of energy at equilibrium

6.7 Group III and Group IV impurities, acceptors and donors, p and n-type materi
als
6.8 Energy band diagrams for uniformly-doped and graded p- and n-type materials
6.9 Generation and recombination of electrons and holes, concept of lifetime
6.10 Mobility and diffusion coefficients for electrons and holes in semi conduct
ors
6.11 Transport and continuity equations for electrons and holes
6.12 Concept of diffusion length
6.13 Energy band diagram for a p-n junction, contact potentials
6.14 Metal-semiconductor contacts
6.15 Brief introduction to Crystallography/metallurgy (Phase diagram, transport
phenomenon)
7.0
7.1
7.2
7.3
7.4
7.6

Semiconductor Materials Processing: (5 hours)

Crystal growing
Doping by solid state diffusion, ion implantation
Oxidation
Photolithography the planar process
Metallization contacts

Textbooks:
1.0 R.A. Colcaser and S.Diehl-Nagle, Materials and Devices for Electrical Enginee
rs
and Physicists, McGraw-Hill, New York, 1985.
2.0 R.C. Jaeger, Introduction to Microelectronic Fabrication- - Volume IV , Addison
Wesley publishing Company, Inc.,1988.
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