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FEATURES
APPLICATIONS
13 kW
Notebook Computers
I/O Supplies
System Power Supplies
DESCRIPTION
The TPS51125 is a cost effective, dual-synchronous
buck controller targeted for notebook system power
supply solutions. It provides 5-V and 3.3-V LDOs and
requires few external components. The 270-kHz
VCLK output can be used to drive an external charge
pump, generating gate drive voltage for the load
switches without reducing the main converters
efficiency. The TPS51125 supports high efficiency,
fast transient response and provides a combined
power-good signal. Out-of-Audio mode light-load
operation enables low acoustic noise at much higher
efficiency than conventional forced PWM operation.
Adaptive on-time D-CAP control provides
convenient and efficient operation. The part operates
with supply input voltages ranging from 5.5 V to 28 V
and supports output voltages from 2 V to 5.5 V. The
TPS51125 is available in a 24-pin QFN package and
is specified from -40C to 85C ambient temperature
range.
20 kW
20 kW
VIN
30 kW
VIN
220 nF
3.3 m F
VO2
5.1 W
3.3 V
VREF
VFB1
VO2
VREG3
VBST2
100 kW
3.3 m F
5.1 W
VO1
DRVH1 21
PowerPAD
5V
LL1 20
EN0
SKIPSEL
GND
VIN
VREG5
330 m F
DRVL1 19
13
14
15
16
17
18
12 DRVL2
VREG5
0.1 m F
VBST1 22
TPS51125RGE
11 LL2
5.5 V
to
28 V
VO1 24
PGOOD 23
10 DRVH2
330 m F
EN0
ENTRIP1
VIN
10 m F x 2
VCLK
0.1 m F
VFB2
10 m F
TONSEL
10 m F x 2
130 kW
ENTRIP2
130 kW
VREG5
100 nF
VREF
VIN
33 m F
100 nF
15 V
VO1
620 kW
100 nF
100 nF
1m F
UDG-09019
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Out-of-Audio, D-CAP are trademarks of Texas Instruments.
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
ORDERING INFORMATION
ORDERABLE
DEVICE NUMBER
TA
PACKAGE
-40C to 85C
TPS51125RGET
TPS51125RGER
OUTPUT
SUPPLY
PINS
24
MINIMUM
QUANTITY
Tape-and-Reel
250
Tape-and-Reel
3000
ECO PLAN
Green (RoHS and no Sb/Br)
PARAMETER
(1)
MIN
MAX
VBST1, VBST2
0.3
36
VIN
0.3
30
LL1, LL2
2.0
30
5.0
30
VBST1, VBST2
(1)
(2)
0.3
0.3
DRVH1, DRVH2
1.0
36
0.3
0.3
DRVH1, DRVH2
(2)
Electrostatic discharge
kV
1.5
40
125
55
150
(2)
(1)
UNIT
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Voltage values are with respect to the corresponding LLx terminal.
DISSIPATION RATINGS
2-oz. trace and copper pad with solder.
(1)
PACKAGE
1.85 W
18.5 mW/C
0.74 W
VIN
5.5
TYP
MAX
0.1
34
0.1
5.5
0.1
5.5
DRVH1, DRVH2
0.8
34
0.1
5.5
LL1, LL2
1.8
28
0.1
5.5
0.1
5.5
40
85
UNIT
28
VBST1, VBST2
MIN
TPS51125
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ELECTRICAL CHARACTERISTICS
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
IVIN1
IVIN2
IVO1
VO1 current
IVO2
0.55
mA
6.5
0.8
1.5
mA
VO2 current
12
100
IVINSTBY
95
250
IVINSDN
10
25
VREF OUTPUT
VVREF
IVREF = 0 A
1.98
2.00
2.02
1.97
2.00
2.03
4.8
5.2
4.75
5.25
4. 75
5.25
100
175
250
Turns on
4.55
4.7
4.85
Hysteresis
0.15
0.25
0.3
VREG5 OUTPUT
VO1 = 0 V, IVREG5 < 100 mA, TA = 25C
VVREG5
IVREG5
VTH5VSW
R5VSW
5 V SW RON
V
mA
V
VREG3 OUTPUT
VO2 = 0 V, IVREG3 < 100 mA, TA= 25C
VVREG3
IVREG3
VTH3VSW
R3VSW
3 V SW RON
3.2
3.33
3.46
3.13
3.33
3.5
3.13
3.33
3.5
VO2 = 0 V, VREG3 = 3 V
100
175
250
Turns on
3.05
3.15
3.25
0.1
0.2
0.25
1.5
Hysteresis
VO2 = 3.3 V, IVREG3 = 100 mA
V
mA
V
1.95
1.98
2.01
1.98
2.01
2.04
2.00
2.035
2.07
(1)
(1)
2.00
-20
20
nA
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
CONDITIONS
MIN
TYP
MAX
UNIT
VOUT DISCHARGE
IDischg
10
60
mA
OUTPUT DRIVERS
RDRVH
DRVH resistance
RDRVL
DRVL resistance
tD
Dead time
1.5
1.5
DRVHx-off to DRVLx-on
10
DRVLx-off to DRVHx-on
30
ns
CLOCK OUTPUT
VCLKH
VCLKL
fCLK
Clock frequency
TA = 25 C
4.84
4.92
0.06
0.12
175
270
325
0.7
V
kHz
Forward voltage
VVREG5-VBSTx, IF = 10 mA, TA = 25 C
0.8
0.9
IVBSTLK
VBSTx = 34 V, LLx = 28 V, TA = 25 C
0.1
CH1 on time 1
2080
tON12
CH1 on time 2
1700
tON13
CH1 on time 3
1390
tON14
CH1 on time 4
1140
tON21
CH2 on time 1
1100
tON22
CH2 on time 2
900
tON23
CH2 on time 3
730
tON24
CH2 on time 4
600
tON(min)
Minimum on time
TA = 25 C
80
tOFF(min)
TA = 25 C
300
Internal SS time
1.1
1.6
2.1
PG in from lower
92.50%
95%
97.50%
PG in from higher
102.50
%
105%
107.50
%
PG hysteresis
2.50%
5%
7.50%
ns
SOFT START
tSS
ms
POWERGOOD
VTHPG
PG threshold
IPGMAX
PG sink current
PGOOD = 0.5 V
tPGDEL
PG delay
Delay for PG in
12
350
510
mA
670
TPS51125
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CONDITIONS
MIN
TYP
MAX
UNIT
IEN0
EN0 current
VEN
ENTRIP1, ENTRIP2
threshold
0.4
0.8
Enable, VCLK = on
2.4
1.6
VEN0 = 0.2 V
3.5
VEN0 = 1.5 V
1.75
2.5
Shutdown
350
400
450
Hysteresis
10
30
60
A
mV
1.5
1.9
2.1
2.7
3.6
4.7
PWM only
VSKIPSEL
1.5
Auto skip
1.9
2.7
9.4
2.1
TCIENTRIP
VOCLoff
VOCL(max)
VENTRIPx = 5 V
VZC
VGND-LLx voltage
VENTRIP
VENTRIPx-GND voltage,
10
4500
(2)
ppm/C
-8
185
205
225
-5
0.515
10.6
mV
tOVPDEL
OVP detect
110%
115%
120%
VUVP
tUVPDEL
20
32
40
tUVPEN
1.4
2.6
ms
4.1
4.2
4.3
0.43
0.48
2
UVP detect
55%
Hysteresis
60%
65%
10%
UVLO
VUVVREG5
VUVVREG3
Wake up
Hysteresis
Shutdown
0.38
(2)
VO2-1
THERMAL SHUTDOWN
TSDN
(2)
Shutdown temperature
Hysteresis
(2)
(2)
150
10
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
DEVICE INFORMATION
Table 1. TERMINAL FUNCTIONS TABLE
TERMINAL
NAME
NO.
I/O
DESCRIPTION
VIN
16
GND
15
Ground.
VREG3
3.3-V power supply output. Connect 10-F ceramic capacitor to Power GND near the device. A 1-F
ceramic capacitor is acceptable when not loaded.
VREG5
17
5-V power supply output. Connect 33-F ceramic capacitor to Power GND near the device.
VREF
2-V reference voltage output. Connect 220-nF to 1-F ceramic capacitor to Signal GND near the device.
Master enable input.
Open : LDOs on, and ready to turn on VCLK and switcher channels.
EN0
13
ENTRIP1
I/O
620 k to GND : enable both LDOs, VCLK off and ready to turn on switcher channels. Power
consumption is almost the same as the case of VCLK = ON.
GND : disable all circuit
ENTRIP2
VO1
24
VO2
VFB1
VFB2
PGOOD
23
I/O
Channel 1 and Channel 2 enable and OCL trip setting pins.Connect resistor from this pin to GND to set
threshold for synchronous RDS(on) sense. Short to ground to shutdown a switcher channel.
I/O
Output connection to SMPS. These terminals work as fixed voltage inputs and output discharge inputs.
VO1 and VO2 also work as 5 V and 3.3 V switch over return power input respectively.
I
O
SKIPSEL
14
TONSEL
DRVL1
19
DRVL2
12
VBST1
22
VBST2
DRVH1
21
DRVH2
10
LL1
20
LL2
11
VCLK
18
O
I
O
I
O
TPS51125
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VO1
PGOOD
VBST1
DRVH1
LL1
DRVL1
24
23
22
21
20
19
ENTRIP1
18 VCLK
VFB1
17 VREG5
VREF
16 VIN
TPS51125RGE
ENTRIP2
13 EN0
7
10
11
12
DRVL2
14 SKIPSEL
LL2
DRVH2
VFB2
VBST2
15 GND
VREG3
VO2
TONSEL
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
TPS51125
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TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
TYPICAL CHARACTERISTICS
VIN SUPPLY CURRENT1
vs
JUNCTION TEMPERATURE
800
IVIN1 - VIN Supply Current1 - mA
700
700
600
500
400
300
200
100
600
500
400
300
200
100
0
-50
50
100
150
TJ - Junction Temperature - C
10
15
20
25
V IN - Input Voltage - V
Figure 1.
Figure 2.
8
IVIN2 - VIN Supply Current2 - mA
7
6
5
4
3
2
7
6
5
4
3
2
1
0
-50
50
100
150
Figure 3.
10
10
15
20
25
V IN - Input Voltage - V
T J - Junction Temperature - C
Figure 4.
TPS51125
www.ti.com
250
250
200
150
100
50
200
150
100
50
0
50
50
100
150
10
TJ - Junction Temperature - C
Figure 5.
20
25
Figure 6.
25
15
V IN - Input Voltage - V
20
15
10
20
15
10
0
-50
50
100
150
10
15
20
25
V IN - Input Voltage - V
T J - Junction Temperature - C
Figure 7.
Figure 8.
11
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
VCLK FREQUENCY
vs
JUNCTION TEMPERATURE
325
13
300
f CLK - VCLK Frequency - kHz
14
12
11
10
9
8
275
250
225
200
7
175
-50
6
-50
50
100
150
0
50
100
T J - Junction Temperature - C
T J - Junction Temperature - C
Figure 9.
Figure 10.
SWITCHING FREQUENCY
vs
INPUT VOLTAGE
SWITCHING FREQUENCY
vs
INPUT VOLTAGE
500
500
TONSEL = 2V
f SW - Swithching Frequency - kHz
TONSEL = GND
400
300
CH2
200
CH1
100
400
CH2
300
CH1
200
100
10
12
14
16
18
20
22
24
26
V IN - Input Voltage - V
10
12
14
16
18
20
22
24
26
V IN - Input Voltage - V
Figure 11.
12
150
Figure 12.
TPS51125
www.ti.com
SWITCHING FREQUENCY
vs
INPUT VOLTAGE
500
500
CH2
400
TONSEL = 3.3V
300
CH1
200
100
CH2
TONSEL = 5V
400
CH1
300
200
100
10
12
14
16
18
20
22
24
26
10
V IN - Input Voltage - V
12
14
16
Figure 13.
20
22
24
26
Figure 14.
SWITCHING FREQUENCY
vs
OUTPUT CURRENT
SWITCHING FREQUENCY
vs
OUTPUT CURRENT
500
500
TONSEL = GND
TONSEL = 2V
f SW - Swithching Frequency - kHz
18
V IN - Input Voltage - V
400
300
CH2 PWM Only
200
CH1 PWM Only
100
CH2 Auto-skip
CH2 OOA
CH1 OOA
400
200
100
CH2 OOA
CH1 OOA
CH1 Auto-skip
0
0.001
0.01
0.1
CH1 Auto-skip
10
0
0.001
0.01
0.1
10
Figure 15.
Figure 16.
13
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
SWITCHING FREQUENCY
vs
OUTPUT CURRENT
500
500
400
TONSEL = 5V
f SW - Swithching Frequency - kHz
TONSEL = 3.3V
300
CH1 PWM Only
200
CH2 Auto-skip
100
CH2 OOA
400
200
CH2 Auto-skip
CH2 OOA
100
CH1 OOA
CH1 OOA
CH1 Auto-skip
CH1 Auto-skip
0
0.001
0.01
0.1
0
0.001
10
0.01
0.1
Figure 17.
10
Figure 18.
150
5.05
140
130
120
110
100
90
80
70
60
50
40
-50
0
TJ
50
100
- Junction Temperature - C
5.00
4.95
150
4.90
0
20
40
60
80
100
Figure 19.
14
Figure 20.
TPS51125
www.ti.com
3.35
2.015
V VREF - VREF Output Voltage - V
2.020
3.3
3.25
2.010
2.005
2.000
1.995
1.990
1.985
3.2
1.980
20
40
60
80
100
20
Figure 21.
100
3.360
OOA
OOA
5.050
80
5.075
5.000
60
Figure 22.
5.025
40
Auto-skip
PWM Only
4.975
4.950
0.001
0.01
0.1
10
3.330
Auto-skip
3.300
PWM Only
3.270
3.240
0.001
0.01
0.1
10
Figure 23.
Figure 24.
15
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
5.050
5.075
IO = 0A
5.025
5.000
IO = 6A
4.975
4.950
3.330
IO = 0A
3.300
IO = 6A
3.270
3.240
10
12
14
16
18
20
22
24
26
10
V IN - Input Voltage - V
Figure 25.
100
Auto-skip
VIN=8V
h - Efficiency - %
h - Efficiency - %
18
20
22
24
26
Auto-skip
80
60
VIN=12V
VIN=20V
40
OOA
VIN=8V
60
VIN=12V
40
20
VIN=20V
OOA
PWM Only
PWM Only
0
0.001
0.01
0.1
10
0
0.001
0.01
0.1
5-V Switcher ON
1
10
Figure 27.
16
16
3.3-V EFFICIENCY
vs
OUTPUT CURRENT
80
20
14
Figure 26.
5-V EFFICIENCY
vs
OUTPUT CURRENT
100
12
V IN - Input Voltage - V
Figure 28.
TPS51125
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VOUT2 (100mV/div)
VOUT1 (100mV/div)
IIND (5A/div)
IIND (5A/div)
IOUT2 (5A/div)
IOUT1 (5A/div)
Figure 29.
Figure 30.
ENTRIP2 (2V/div)
ENTRIP1 (2V/div)
VOUT1 (2V/div)
VOUT2 (2V/div)
PGOOD (5V/div)
PGOOD (5V/div)
Figure 31.
Figure 32.
17
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
VREG5 (200mV/div)
VREG3 (200mV/div)
VOUT2 (200mV/div)
VOUT1 (200mV/div)
Figure 33.
Figure 34.
ENTRIP1 (5V/div)
ENTRIP2 (5V/div)
VOUT1 (2V/div)
VOUT2 (2V/div)
PGOOD (5V/div)
PGOOD (5V/div)
DRVL2 (5V/div)
DRVL1 (5V/div)
Figure 35.
18
Figure 36.
TPS51125
www.ti.com
APPLICATION INFORMATION
PWM Operations
The main control loop of the switch mode power supply (SMPS) is designed as an adaptive on-time pulse width
modulation (PWM) controller. It supports a proprietary D-CAP mode. D-CAP mode does not require external
compensation circuit and is suitable for low external component count configuration when used with appropriate
amount of ESR at the output capacitor(s).
At the beginning of each cycle, the synchronous top MOSFET is turned on, or becomes ON state. This
MOSFET is turned off, or becomes OFF state, after internal one shot timer expires. This one shot is determined
by VIN and VOUT to keep frequency fairly constant over input voltage range, hence it is called adaptive on-time
control. The MOSFET is turned on again when the feedback point voltage, VFB, decreased to match with internal
2-V reference. The inductor current information is also monitored and should be below the over current threshold
to initiate this new cycle. Repeating operation in this manner, the controller regulates the output voltage. The
synchronous bottom or the rectifying MOSFET is turned on at the beginning of each OFF state to keep the
conduction loss minimum.The rectifying MOSFET is turned off before the top MOSFET turns on at next switching
cycle or when inductor current information detects zero level. In the auto-skip mode or the OOA skip mode, this
enables seamless transition to the reduced frequency operation at light load condition so that high efficiency is
kept over broad range of load current.
SWITCHING FREQUENCY
CH1
CH2
GND
200 kHz
250 kHz
VREF
245 kHz
305 kHz
VREG3
300 kHz
375 kHz
VREG5
365 kHz
460 kHz
19
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
Loop Compensation
From small-signal loop analysis, a buck converter using D-CAPTM mode can be simplified as below.
VIN
R1
DRVH
PWM
VFB
+
+
R2
Control
logic
&
Driver
Lx
Ic
IL
DRVL
Io
2V
ESR
Vc
Voltage Divider
RL
Switching Modulator
Co
Output Capacitor
f
1
SW
2p ESR CO
4
(1)
TM
As f0 is determined solely by the output capacitor's characteristics, loop stability of D-CAP mode is determined
by the capacitor's chemistry. For example, specialty polymer capacitors (SP-CAP) have Co in the order of
several 100 F and ESR in range of 10 m. These will make f0 in the order of 100 kHz or less and the loop will
be stable. However, ceramic capacitors have f0 at more than 700 kHz, which is not suitable for this operational
mode.
Ramp Signal
The TPS51125 adds a ramp signal to the 2-V reference in order to improve its jitter performance. As described in
the previous section, the feedback voltage is compared with the reference information to keep the output voltage
in regulation. By adding a small ramp signal to the reference, the S/N ratio at the onset of a new switching cycle
is improved. Therefore the operation becomes less jitter and stable. The ramp signal is controlled to start with 20mV at the beginning of ON-cycle and to become 0 mV at the end of OFF-cycle in steady state. By using this
scheme, the TPS51125 improve jitter performance without sacrificing the reference accuracy.
20
TPS51125
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1
2Lf
(2)
21
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
ENTRIP1
ENTRIP2
VREF
VREG5
VREG3
CH1
CH2
VCLK
GND
Dont Care
Dont Care
Off
Off
Off
Off
Off
Off
R to GND
Off
Off
On
On
On
Off
Off
Off
R to GND
On
Off
On
On
On
On
Off
Off
R to GND
Off
On
On
On
On
Off
On
Off
R to GND
On
On
On
On
On
On
On
Off
Open
Off
Off
On
On
On
Off
Off
Off
Open
On
Off
On
On
On
On
Off
On
Open
Off
On
On
On
On
Off
On
Off
Open
On
On
On
On
On
On
On
On
22
TPS51125
www.ti.com
Powergood
The TPS51125 has one powergood output that indicates 'high' when both switcher outputs are within the targets
(AND gated). The powergood function is activated with 2-ms internal delay after ENTRIPx goes high. If the
output voltage becomes within +/-5% of the target value, internal comparators detect power good state and the
powergood signal becomes high after 510-s internal delay. Therefore PGOOD goes high around 2.5 ms after
ENTRIPx goes high. If the output voltage goes outside of +/-10% of the target value, the powergood signal
becomes low after 2-s internal delay. The powergood output is an open drain output and is needed to be pulled
up outside.
Also note that, in the case of Auto-skip or Out-of-Audio mode, if the output voltage goes +10% above the
target value and the power-good signal flags low, then the loop attempts to correct the output by turning on the
low-side driver (forced PWM mode). After the feedback voltage returns to be within +5% of the target value and
the power-good signal goes high, the controller returns back to auto-skip mode or Out-of-Audio mode.
Low-Side Driver
The low-side driver is designed to drive high current low RDS(on) N-channel MOSFET(s). The drive capability is
represented by its internal resistance, which are 4 for VREG5 to DRVLx and 1.5 for DRVLx to GND. A dead
time to prevent shoot through is internally generated between top MOSFET off to bottom MOSFET on, and
bottom MOSFET off to top MOSFET on. 5-V bias voltage is delivered from VREG5 supply. The instantaneous
drive current is supplied by an input capacitor connected between VREG5 and GND. The average drive current
is equal to the gate charge at Vgs = 5 V times switching frequency. This gate drive current as well as the highside gate drive current times 5 V makes the driving power which need to be dissipated from TPS51125 package.
High-Side Driver
The high-side driver is designed to drive high current, low RDS(on) N-channel MOSFET(s). When configured as a
floating driver, 5-V bias voltage is delivered from VREG5 supply. The average drive current is also calculated by
the gate charge at Vgs = 5 V times switching frequency. The instantaneous drive current is supplied by the flying
capacitor between VBSTx and LLx pins. The drive capability is represented by its internal resistance, which are
4 for VBSTx to DRVHx and 1.5 for DRVHx to LLx.
23
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
TPS51125
EN0
EN0
Control
Input
13
13
GND
GND
Control
Input
15
15
VCLK 18
100nF
100nF
VO1 (5V)
D0
D1
100nF
PGND
D2
100nF
PGND
15V/10mA
D4
1uF
PGND
24
TPS51125
www.ti.com
Current Protection
TPS51125 has cycle-by-cycle over current limiting control. The inductor current is monitored during the OFF
state and the controller keeps the OFF state during the inductor current is larger than the over current trip level.
In order to provide both good accuracy and cost effective solution, TPS51125 supports temperature
compensated MOSFET RDS(on) sensing. ENTRIPx pin should be connected to GND through the trip voltage
setting resistor, RTRIP. ENTRIPx terminal sources ITRIP current, which is 10 A typically at room temperature, and
the trip level is set to the OCL trip voltage VTRIP as below. Note that the VTRIP is limited up to about 205 mV
internally.
VTRIP (mV ) =
- 24 (mV )
(3)
External leakage current to ENTRIPx pin should be minimized to obtain accurate OCL trip voltage.
The inductor current is monitored by the voltage between GND pin and LLx pin so that LLx pin should be
connected to the drain terminal of the bottom MOSFET properly. Itrip has 4500 ppm/C temperature slope to
compensate the temperature dependency of the RDS(on). GND is used as the positive current sensing node so
that GND should be connected to the proper current sensing device, i.e. the source terminal of the bottom
MOSFET.
As the comparison is done during the OFF state, VTRIP sets valley level of the inductor current. Thus, the load
current at over current threshold, IOCP, can be calculated in Equation 4.
IOCP =
RDS(on )
2
RDS(on ) 2 L f
VIN
(4)
In an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output
voltage tends to fall down. Eventually, it ends up with crossing the under voltage protection threshold and
shutdown both channels.
25
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
UVLO Protection
TPS51125 has VREG5 under voltage lock out protection (UVLO). When the VREG5 voltage is lower than UVLO
threshold voltage both switch mode power supplies are shut off. This is non-latch protection. When the VREG3
voltage is lower than (VO2 - 1 V), both switch mode power supplies are also shut off.
Thermal Shutdown
TPS51125 monitors the temperature of itself. If the temperature exceeds the threshold value (typically 150C),
TPS51125 is shut off including LDOs. This is non-latch protection.
(VOUT - 2.0 ) R2
2.0
(5)
1
IIND(ripple ) f
(V
IN(max ) - VOUT
) V
OUT
VIN(max )
3
IOUT(max ) f
(V
IN(max ) - VOUT
VIN(max )
) V
OUT
(6)
The inductor also needs to have low DCR to achieve good efficiency, as well as enough room above peak
inductor current before saturation. The peak inductor current can be estimated as follows.
IIND(peak ) =
VTRIP
RDS (on )
1
Lf
(V
IN(max )
- VOUT
) V
OUT
VIN(max )
(7)
VOUT 20 (mV ) (1 - D )
2 (V ) IRIPPLE
20 (mV ) L f
2 (V )
where
26
TPS51125
www.ti.com
Layout Considerations
Certain points must be considered before starting a layout work using the TPS51125.
TPS51125 has only one GND pin and special care of GND trace design makes operation stable, especially
when both channels operate. Group GND terminals of output voltage divider of both channels and the VREF
capacitor as close as possible, connect them to an inner GND plane with PowerPad, overcurrent setting
resistor, EN0 pull-down resistor and EN0 bypass capacitor as shown in the thin GND line of Figure 40. This
trace is named Signal Ground (SGND). Group ground terminals of VIN capacitor(s), VOUT capacitor(s) and
source of low-side MOSFETs as close as possible, and connect them to another inner GND plane with GND
pin of the device, GND terminal of VREG3 and VREG5 capacitors and 15-V charge-pump circuit as shown in
the bold GND line of Figure 40. This trace is named Power Ground (PGND). SGND should be connected to
PGND at the middle point between ground terminal of VOUT capacitors.
Inductor, VOUT capacitor(s), VIN capacitor(s) and MOSFETs are the power components and should be
placed on one side of the PCB (solder side). Power components of each channel should be at the same
distance from the TPS51125. Other small signal parts should be placed on another side (component side).
Inner GND planes above should shield and isolate the small signal traces from noisy power lines.
PCB trace defined as LLx node, which connects to source of high-side MOSFET, drain of low-side MOSFET
and high-voltage side of the inductor, should be as short and wide as possible.
VREG5 requires capacitance of at least 33 F and VREG3 requires capacitance of at most 10 F. VREF
requires a 220-nF ceramic bypass capacitor which should be placed close to the device and traces should be
no longer than 10 mm.
Connect the overcurrent setting resistors from ENTRIPx to SGND and close to the device, right next to the
device if possible.
The discharge path (VOx) should have a dedicated trace to the output capacitor; separate from the output
voltage sensing trace. When LDO5 is switched over Vo1 trace should be 1.5 mm with no loops. When LDO3
is switched over and loaded Vo2 trace should also be 1.5 mm with no loops. There is no restriction for just
monitoring Vox. Make the feedback current setting resistor (the resistor between VFBx to SGND) close to the
device. Place on the component side and avoid vias between this resistor and the device.
Connections from the drivers to the respective gate of the high-side or the low-side MOSFET should be as
short as possible to reduce stray inductance. Use 0.65-mm (25 mils) or wider trace and via(s) of at least 0.5
mm (20 mils) diameter along this trace.
All sensitive analog traces and components such as VOx, VFBx, VREF, GND, EN0, ENTRIPx, PGOOD,
TONSEL and SKIPSEL should be placed away from high-voltage switching nodes such as LLx, DRVLx,
DRVHx and VCLK nodes to avoid coupling.
Traces for VFB1 and VFB2 should be short and laid apart each other to avoid channel to channel
interference.
In order to effectively remove heat from the package, prepare thermal land and solder to the packages
thermal pad. Three by three or more vias with a 0.33-mm (13 mils) diameter connected from the thermal land
to the internal ground plane should be used to help dissipation. This thermal land underneath the package
should be connected to SGND, and should NOT be connected to PGND.
27
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
SGND
VIN
VIN
220 nF
VOUT2
VFB2
VREF
VFB1
DRVL2
VOUT1
DRVL1
12
19
TPS51125
VREG5
PowerPAD
GND VREG3
PGND
PGND
17
15
33 mF
15 V
OUT
10 mF
VCLK
Charge
Pump
SGND
UDG-09020
28
TPS51125
www.ti.com
*
CH1 Vout divider
Driver and switch node traces are shown for CH1 only.
TPS51125
Top Layer
DRVH1*
LL1*
CVREF
DRVL1*
CVREG5
CH2 Vout divider
Connection to
GND island
CVREG3
Inner Layer
GND
GND island
Cout
HS-MOSFET
Vout1
LS-MOSFET
To VO1
Cin
VIN
GND
To VO2
Cin
Vout2
HS-MOSFET
L
Cout
Bottom Layer
LS-MOSFET
29
TPS51125
SLUS786G OCTOBER 2007 REVISED JUNE 2012
www.ti.com
Application Circuit
SGND
R1
13kW
R2
20kW
R4
30kW
R3
20kW
C6
0.22mF
R5
130kW
R6
130kW
3.3V/100mA
SGND
SGND
VREF
VIN
7 VO2
1
VIN
5.5 ~ 28V
RI
P1
EN
T
3
VR
E
EL
VF
B2
C2
10mF
4
TO
NS
RI
P2
EN
T
C1
10mF
VF
B1
VIN
6
VO1
24
PGOOD
23
VBST1
22
R8
100kW
C3
10mF
8 VREG3
PGND
VREG5
PGND
PGND
Q1
IRF7821
L1
3.3mH
C9
10mF
C8
10mF
9 VBST2
C4
0.1mF
R7
5.1W
C7
0.1mF
R9
5.1W
TPS51125RGE
(QFN24)
10 DRVH2
DRVH1
21
LL1
20
Q3
IRF7821
L2
3.3mH
VO2
3.3V/8A
VO1
5V/8A
11 LL2
C5
POSCAP
330mF
PowerPAD
Q2
FDS6690AS
DRVL1
VR
E
VC
LK
13
14
15
16
17
18
G5
VIN
PGND
GN
PGND
SK
IPS
EL
VO2_GND
EN
0
12 DRVL2
C10
POSCAP
330mF
Q4
FDS6690AS
19
VO1_GND
PGND
PGND
SGND
VREG5
EN0
5V/100mA
S1
C11
33mF
R10
620kW
C15
100nF
C13
100nF
VO1
VREF
D1
D3
15V/10mA
D4
D2
SGND
PGND
PGND
C12
100nF
C14
100nF
C16
1uF
PGND
PART NUMBER
SYMBOL
10 F, 25 V
Taiyo Yuden
TMK325BJ106MM
C3
10 F, 6.3 V
TDK
C2012X5R0J106K
C11
33 F, 6.3 V
TDK
C3216X5RBJ336M
C5, C10
330 F, 6.3 V, 25 m
Sanyo
6TPE330ML
L1, L2
TOKO
FDA1055-3R3M
Q1, Q3
30 V, 9.5 m
IR
IRF7821
Q2, Q4 (1)
30 V, 12 m
Fairchild
FDS6690AS
(1)
30
SPECIFICATION
Please use MOSFET with integrated Schottky barrier diode (SBD) for low side, or add SBD in parallel
with normal MOSFET.
TPS51125
www.ti.com
REVISION HISTORY
Changes from Revision E (May 2011) to Revision F
Page
Added Input voltage range parameter, LL1, LL2, pulse width < 20 ns with a value of -5 V to 30 V. ................................... 2
Page
31
26-Jan-2013
Device
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TPS51125RGER
VQFN
RGE
24
3000
330.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
TPS51125RGER
VQFN
RGE
24
3000
330.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
TPS51125RGET
VQFN
RGE
24
250
180.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
TPS51125RGET
VQFN
RGE
24
250
180.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
Pack Materials-Page 1
26-Jan-2013
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS51125RGER
VQFN
RGE
24
3000
367.0
367.0
35.0
TPS51125RGER
VQFN
RGE
24
3000
367.0
367.0
35.0
TPS51125RGET
VQFN
RGE
24
250
210.0
185.0
35.0
TPS51125RGET
VQFN
RGE
24
250
210.0
185.0
35.0
Pack Materials-Page 2
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