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APM4953

Dual P-Channel Enhancement Mode MOSFET

Features

Pin Description

-30V/-4.9A, RDS(ON) = 53m(typ.) @ VGS = -10V

5

RDS(ON) = 80m(typ.) @ VGS = -4.5V

&

,

,

Super High Density Cell Design

/

Reliable and Rugged

SO-8 Package

"

SO 8

Applications

5

Power Management in Notebook Computer,


/

/

Portable Equipment and Battery Powered


Systems

,

Ordering and Marking Information


APM 4953

Tem p. R ange
P ackage C ode

A P M 4953
XXXXX

P-Channel MOSFET

X X X X X - D a te C o d e

Absolute Maximum Ratings


Symbol

P ackage C ode
K : S O -8
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel

H a n d lin g C o d e

A P M 4953 K :

,

(TA = 25C unless otherwise noted)

Parameter

Rating

VDSS

Drain-Source Voltage

-30

VGSS

Gate-Source Voltage

25

ID*

Maximum Drain Current Continuous

IDM

Maximum Drain Current Pulsed

TA = 25C

-4.9
-30

Unit
V
A

* Surface Mounted on FR4 Board, t 10 sec.


ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

www.anpec.com.tw

APM4953
Absolute Maximum Ratings (Cont.)
Symbol
PD

Parameter

Rating

Maximum Power Dissipation

TJ

(TA = 25C unless otherwise noted)

TA = 25C

2.5

TA = 100C

1.0

Maximum Junction Temperature

TSTG
*

Electrical Characteristics
Parameter

-55 to 150

Thermal Resistance - Junction to Ambient

Symbol

150

Storage Temperature Range

RJA

Unit

50

C/W

(TA=25C unless otherwise noted)

Test Condition

Min.

APM4953
=
Typ . Max.

Unit

Static
BV DSS
IDSS
VGS(th)
IGSS
R DS(ON)

Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage

VDS=VGS , IDS=-250A

VDS=-24V , VGS=0V
-1

-1.5

-1

-2

100

nA

Gate Leakage Current

VGS=25V , VDS=0V
VGS=-10V , IDS=-4.9A

>

53

60

VGS=-4.5V , IDS=-3.6A

80

95

ISD=-1.7A , VGS=0V

-0.7

-1.3
29

Diode Forward Voltage

Dynamic

-30

Drain-Source On-state
Resistance

V SD

VGS=0V , IDS=-250A

>

Qg

Total Gate Charge

VDS=-15V , IGS=-10V

22.3

lD=-4.6A

4.65

Q gs

Gate-Source Charge

Q gd

Gate-Drain Charge

td(ON)
Tr

Turn-on Delay Time


Turn-on Rise Time

10

18

15

20

td(OFF)

Turn-off Delay Time

22

38

15
1260

25

Tf

Turn-off Fall Time

C iss

Input Capacitance

C oss

Output Capacitance

C rss


  Notes

a
b

VDD=-15V , ID=-2A ,
VGEN=-10V , R G=6
R L=7.5
VGS=0V

VDS=-25V
Reverse Transfer Capacitance Frequency=1.0MHz

340

m
V

nC

ns

pF

220

: Pulse test ; pulse width 300s, duty cycle 2%


: Guaranteed by design, not subject to production testing

Copyright ANPEC Electronics Corp.


Rev. A.2 - Feb., 2003

www.anpec.com.tw

APM4953
Typical Characteristics

Output Characteristics

-V/5= 5,6,7,8,9,10V

20

25

-ID-Drain Current (A)

25

-V/5=4V

15
10

-V/5=3V

5
0

30

15
TJ=125C
TJ=-55C

10
TJ=25C

-V/5=2V
0

20

Threshold Voltage vs. Junction Temperature


RDS(on)-On-Resistance
()

1.00

-VGS(th)-Threshold Voltage (V)


(Normalized)

-IDS=250A

0.50
0.25

-25

25

50

75

0.12
0.10
V/5=-4.5V

0.08

V/5=-10V

0.06
0.04
0.02
0.00

100 125 150

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp.


Rev. A.2 - Feb., 2003

0.14

1.25

0.00
-50

On-Resistance vs. Drain Current

0.75

-VGS - Gate-to-Source Voltage (V)

-VDS - Drain-to-Source Voltage (V)

1.50

30

-ID-Drain Current (A)

Transfer Characteristics

12

15

-ID - Drain Current (A)

www.anpec.com.tw

APM4953
Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage


-I,= 4.9A

0.225

-VGS=10V
-ID=4.9A

1.75

0.200

1.50

0.175

1.25

0.125

1.00

0.150

0.75

0.100

0.50

0.075
0.050
0.025

2.00

RDS(on)-On-Resistance ()
(Normalized)


0.250

RDS(on)-On-Resistance
()


On-Resistance vs. Junction Temperature

0.25
1

0.00
-50

10

-25

2000
1600

Ciss

Capacitance (pF)

-VGS-Gate-Source Voltage (V)

Frequency=1MHz

2400

1200
800

Coss

400

100 125 150

2800

-VD=10V
-ID=4.9A

0

75

Capacitance

Gate Charge

50


(C)
TJ - Junction Temperature

-VGS - Gate-to-Source Voltage (V)

10

25

10

15

20

25

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp.


Rev. A.2 - Feb., 2003

Crss

10

15

20

25

30

-VDS - Drain-to-Source Voltage (V)

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APM4953
Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

Single Pulse Power

30

50

TJ=25C

30

TJ=150C

Power (W)

40

-IS-Source Current ()

10

20

10
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0
0.01

0.1

10

100

Time (sec)

-VSD-Source-to-Drain Voltage (V )

Normalized Thermal Transient Impedence, Junction to Ambient

Duty Cycle = 0.5

D= 0.2
D= 0.1

0.1

Normalized Effective Transient


Thermal Impedance

D= 0.05

D= 0.02

1.Duty Cycle, D=t1/t2


2.Per Unit Base=RthJA=50C/W
3.T JM -T A=P DMZ thJA
4.Surface Mounted

SINGLE PULSE

0.01
1E-4

1E-3

0.01

0.1

10

100

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp.


Rev. A.2 - Feb., 2003

www.anpec.com.tw

APM4953
Packaging Information

e1

0.015X45

SOP-8 pin ( Reference JEDEC Registration MS-012)

e2
D
A1

1
L

0.004max.

Dim

Mi ll im et er s

Inche s

Min.
1. 35

Max .
1. 75

Min.
0. 053

Max .
0. 069

A1
D
E

0. 10
4. 80
3. 80

0. 25
5. 00
4. 00

0. 004
0. 189
0. 150

0. 010
0. 197
0. 157

H
L
e1
e2

5. 80
0. 40
0. 33

6. 20
1. 27
0. 51

0. 228
0. 016
0. 013

0. 244
0. 050
0. 020

Copyright ANPEC Electronics Corp.


Rev. A.2 - Feb., 2003

1. 27BSC

0. 50BSC

www.anpec.com.tw

APM4953
Physical Specifications
Terminal Material
Lead Solderability

Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)


Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)

temperature

Reflow Condition

Peak temperature
183C
Pre-heat temperature

Time

Classification Reflow Profiles


Convection or IR/
Convection
Average ramp-up rate(183C to Peak)
3C/second max.
120 seconds max
Preheat temperature 125 25C)
60 150 seconds
Temperature maintained above 183C
Time within 5C of actual peak temperature 10 20 seconds
Peak temperature range
220 +5/-0C or 235 +5/-0C
Ramp-down rate
6 C /second max.
6 minutes max.
Time 25C to peak temperature

VPR
10 C /second max.
60 seconds
215-219C or 235 +5/-0C
10 C /second max.

Package Reflow Conditions


pkg. thickness 2.5mm
and all bgas
Convection 220 +5/-0 C
VPR 215-219 C
IR/Convection 220 +5/-0 C

pkg. thickness < 2.5mm and


pkg. volume 350 mm

Copyright ANPEC Electronics Corp.


Rev. A.2 - Feb., 2003

pkg. thickness < 2.5mm and pkg.


volume < 350mm
Convection 235 +5/-0 C
VPR 235 +5/-0 C
IR/Convection 235 +5/-0 C
www.anpec.com.tw

APM4953
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST

Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9

Description
245C,5 SEC
1000 Hrs Bias @ 125C
168 Hrs, 100% RH, 121C
-65C ~ 150C, 200 Cycles

Carrier Tape & Reel Dimensions


D

Po

P1
Bo

Ao

D1

Ko
T2

J
C

T1

Application

SOP- 8

330 1
F
5.5 1

T1

T2

62 +1.5

C
12.75+
0.15

2 0.5

12.4 0.2

2 0.2

12 0. 3

8 0.1

1.750.1

D1

Po

P1

Ao

Bo

Ko

1.55 +0.1 1.55+ 0.25 4.0 0.1

Copyright ANPEC Electronics Corp.


Rev. A.2 - Feb., 2003

2.0 0.1 6.4 0.1

5.2 0. 1

2.1 0.1 0.30.013

www.anpec.com.tw

APM4953
Cover Tape Dimensions
Application
SOP- 8

Carrier Width
12

Cover Tape Width


9.3

Devices Per Reel


2500

Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright ANPEC Electronics Corp.


Rev. A.2 - Feb., 2003

www.anpec.com.tw

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