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Homework # 2
Ignore all points assigned to problems below.
3.
1.
2.
4.
180
Clapter 3.
E3.10
E3.11
(a)
(b)
(c)
Plot on a linear scale the charge density p(x) in the depletion region,
including the contributions of the electrons and holes from your answer
in part (b). Estimate the percentage error in the charge on one side of
the junction, if we neglect the electron and hole charge.
Consider
a pn junction
potential
E3.1!
doping Na
through the
= Nd =
What is the magnitude of the electric field IEo(x = 0)1 (where the metal
lurgical junction is located at x = O) in thermal equilibrium?
(b)
(c)
= O increased
E3.1
cap2
hay
(a)
(b)
(c)
kno
1017 cm-l,
(a)
depletio
for a pn junction
junction is
is Emax
E3.
co
= if
E3
(a)
co
(b)
(c)
depletion
region width?
E3.14
= -2.5
width to 50 um?
in a pn junction witl
(a)
For VD
(b)
(c)
Plot the difference between Pma.(x) and p(x) and the difference between
Pmin(X) and p(x) on the same graph. Find the small-signal charge perunit
area qj in units C/cm2 for each case. Are they equal and opposite? Why
or why not?
a
p
n
186
Chapter 3.
@
P3.6
rate
-------o-:-:.f
The silicon structure in Fig. P3.6 consists of two pn junctions that are sepay um. The n-type to metal contact potential <Pnm = 400 mV = <Pn - <Pm = -$mn'
(a) Find the depletion widths for each junction in thermal equilibrium.
(b) Plot the electric field E(x) through the structure in thermal equilibrum.
(c) Plot the potential <Po(x) in thermal equilibrium, including the contact
potentials.
P3.7
The pn junction in Fig. P3.7 has a stepped doping concentration on each side
the metallurgical junction.
(a) Find the depletion width Xdo in thermal equilibrium.
(b) if the n and p sides of the junction are each depleted by um, sketch the
charge density, the electric field, and the potential.
<Pnm
o
Nd= 1016cm-3
2
Na = 5
1OJ6 cm-3
3
Nd
1016cm-3
<Pmn
X (um)
~ Figure P3.6
<Ppm
+
Na = 1016cm-3
VD
-0.5
O
0.5
X
(um)
Na = 5
1016 cm-3
Nd = 5
1OJ6 cm-3
Nd =
ol6cm-3
<Pmn
+
~ Figure P3.7