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ELEC 310

Homework # 2
Ignore all points assigned to problems below.

3.

1.

Problem E3-13 of Howe and Sodini.

2.

Problem P3.6 of Howe and Sodini.

See page 3 for this problem


See page 4 for this problem

4.

180

Clapter 3.

pn}unction and MOS Electrostatics

E3.10

This exercise investigates the depletion approximation,


diode with symmetrical doping Na = Nd = 1015 cm ".

E3.11

<Po(x) according to the depletian

(a)

Find the thermal equilibrium


approximation.

(b)

Plot on a linear scale the electron and hole concentrations


depletion region, in thermal equilibrium.

(c)

Plot on a linear scale the charge density p(x) in the depletion region,
including the contributions of the electrons and holes from your answer
in part (b). Estimate the percentage error in the charge on one side of
the junction, if we neglect the electron and hole charge.

Consider

a pn junction

potential

E3.1!

doping Na

diode with symmetrical

through the

= Nd =

What is the magnitude of the electric field IEo(x = 0)1 (where the metal
lurgical junction is located at x = O) in thermal equilibrium?

(b)

For what value of bias voltage VD is the electric field at x


by a factor of 3?

(c)

Plot IE(O)I as a function of VD for -7.5 V < VD < O.

= O increased

E3.1
cap2

hay

1019 cm " and n-side doping

(a)

Sketch the potential in thermal equilibrium, using the approximation


that the junction is "one-sided" as discussed in Ex. 3.5.

(b)

What is the electric field IEo(x = 0)1 (where the metallurgical


located at x = O) in thermal equilibrium?

(c)

if the maximum electric field allowable in the junction


V/cm what is the maximum reverse bias permitted?

Solve only this problem on this page

kno

1017 cm-l,

(a)

E3.U Consider a pn junction with p-side doping Na


Nd = 1017 cm ".

depletio

for a pn junction

junction is
is Emax

E3.
co

= if

ow doped silicon is used in partide detectors, in order to obtain a wide


region. Consider a pn junction with p-side doping Na = 5 X 1012 cm-3 and
oping Nd = 1017 cm ".

E3

(a)

What is the thermal equilibrium

co

(b)

What is the reverse bi as needed to increase the depletion

(c)

if the maximum electric field allowable in the junction is Emax = 5 x l~ 5x10^5


V/cm what is the maximum depletion width? What is the bias voltage
corresponding
to the maximum depletion width?

depletion

region width?

E3.14

We would like to investigate the charge distribution


doping levels Na = 1016 cm" and Nd = 5 x 1016 cm ".

= -2.5

width to 50 um?

in a pn junction witl

V, plot the charge density p(x).

(a)

For VD

(b)

We add to VD a time-varying voltage Vd (t) = (250 mV)cos (rot). Plot the


charge density when vD(t) = VD + Vd (t) is at its maximum (Pmaix and
its minimum (Pmin(X.

(c)

Plot the difference between Pma.(x) and p(x) and the difference between
Pmin(X) and p(x) on the same graph. Find the small-signal charge perunit
area qj in units C/cm2 for each case. Are they equal and opposite? Why
or why not?

a
p
n

186

Chapter 3.

pn}unction and MOS Electrostatics

@
P3.6
rate

-------o-:-:.f

Solve only this problem on this page

(a) What is the relationship between E(O-) and E(O+)?


(b) Sketch the electric field through the structure.

The silicon structure in Fig. P3.6 consists of two pn junctions that are sepay um. The n-type to metal contact potential <Pnm = 400 mV = <Pn - <Pm = -$mn'
(a) Find the depletion widths for each junction in thermal equilibrium.

(b) Plot the electric field E(x) through the structure in thermal equilibrum.
(c) Plot the potential <Po(x) in thermal equilibrium, including the contact
potentials.
P3.7
The pn junction in Fig. P3.7 has a stepped doping concentration on each side
the metallurgical junction.
(a) Find the depletion width Xdo in thermal equilibrium.
(b) if the n and p sides of the junction are each depleted by um, sketch the
charge density, the electric field, and the potential.

<Pnm

o
Nd= 1016cm-3

2
Na = 5

1OJ6 cm-3

3
Nd

1016cm-3

<Pmn

X (um)

~ Figure P3.6

<Ppm

+
Na = 1016cm-3

VD

-0.5
O
0.5
X

(um)

Na = 5

1016 cm-3

Nd = 5

1OJ6 cm-3

Nd =

ol6cm-3

<Pmn
+

~ Figure P3.7

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