CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure
Inventor(s):

ZENG DAWEN; YI SHENG; XIE CHANGSHENG; ZHANG SHUNPING

+

Applicant(s): UNIV HUAZHONG SCIENCE TECH +

Classification: - international: G01N27/00

The invention discloses a method for manufacturing a metal oxide semiconductor

(MOS) gas sensor array with a porous network structure. The method is used for
manufacturing a gas sensor array based on multiple different MOS sensor
elements with the porous network structure in situ on a same chip based on a
sacrificial template. The method is a preparation method for integrating material
devices, the preparation process comprises silk-screen printing, micro drip and
calcining process, the characteristics that a CNTs (carbon nanotubes) template
material is high in toughness, is unlikely to be mechanically damaged and is easily
subjected to heat treatment removal are utilized, the material serves as the
sacrificial template on the element surface, a sensitive material with the porous
network structure can be prepared in situ on the surface of the chip, and the
special porous network structure of the sensitive material is prevented from being
damaged, so that the excellent sensitive property of the sensitive material with the
porous network structure can be fully exerted. The sensor array obtained by the
method is fast in response, has high selectivity and is used for testing gases such
as formaldehyde, methanol, toluene and ammonia gas and concentrations thereof.
DescripTION
The method of manufacturing a porous network structure MOS gas sensor array
Art
[0001] The present invention belongs to the technical field of gas sensors, in
particular to a method for preparing a porous network of metal oxide
semiconductor structure (MOS) gas sensor array, the method is based on the
expense of carbon nanotubes (CNTs) template, and combined with screen printing
(SP), micro-infusion (MJ) and calcination (C) Integrated Device Technology
Materials Preparation (SPMJC method).
BACKGROUND

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure

[0002] MOS gas sensor has a simple structure and low cost characteristics,
environmental monitoring, food and public safety, aerospace, process control,
disease diagnosis and other fields are widely used. But MOS gas sensors for gas
with broad-spectrum response characteristics, can not differentiate between the
type of gas, that is less selective, become an obstacle MOS sensor application
bottlenecks. Effective way to increase selectivity is to present a plurality of gas
sensors based on the integration of different materials for the MOS sensor array,
which requires fixed location sensitive material to achieve the preparation of the
space in the manufacturing process of the array. There are two array fabrication
technologies: screen printing and micro drip. Using traditional screen printing
technology combined with multi-pass strategy, the sensor array can be produced
based on a number of different sensitive material of the sensor element, which
sensitive membrane has a porous structure, large surface area, high sensitivity and
fast response, but its process complexity, high cost and difficult to scale
manufacturing; micro-infusion technology, can easily produce a gas sensor array,
low cost, easy-to-scale manufacturing, but because of the sensitive material is a
dense film, gas sensor array poor sensitivity and slow response .
[0003] On the other hand, the sensitive film of the MOS array has a porous network
structure, the specific surface area can be obtained, a high activity, a substantial
increase in sensitivity and response speed of the sensor, and the expense of
preparing a template method is the special structure of the material Effective
methods. Conventional manufacturing method is a sensor or an array of first
having a specific structure have been prepared by ball milling a slurry material, and
then using the screen printing technique to be printed onto a substrate sensitive
membrane formed by sintering, and then the package, but the manufacturing
process easy to make the structure of the special preparation is destroyed.
[0004] If the sacrificial template-based method, the two kinds of array fabrication
techniques (screen printing and micro-infusion) effective combination, weaknesses,
and materials synthesis synchronized with the sensor array fabrication, integration,
you can overcome the traditional sensor array defects in the manufacturing
method, by a simple and effective method for manufacturing MOS gas sensor
array, the special structure of the sensitive film can be maintained on the array, a
sensor array manufactured with high selectivity and high sensitivity and fast
response.
SUMMARY
[0005] The present invention provides a method of manufacturing a MOS gas
sensor array, a porous network structure, and its object is both to ensure that the
special structure of the device is not destroyed in the manufacturing process, and
can easily be manufactured based on a plurality of different sensitive materials The
sensor array of sensor elements, in order to increase the selectivity, the sensitivity
and response speed of the array.

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure

[0006] The method for manufacturing a MOS gas sensor array of the present
invention provides the method comprising the steps of:
[0007] Step I pretreatment:
[0008] On a clean screen printing electrodes of the ceramic substrate and a heater
successively and sequentially performed by the leveling, drying and firing to give
the sensor array substrate;
[0009] The second step screen printing CNTs template material:
[0010] After the pretreatment of the sensor array substrate, screen printing CNTs
template material film to obtain a film of CNTs array template material and heat
treated to remove organic matter in the slurry is added to the printing;
[0011] Step 3 of infusion solution or sol of the precursor:
[0012] In various CNTs template material were obtained CNTs template material
film array film infusion of different precursor solution or sol, and sonicated and the
solution or sol infiltration CNTs template material film;
[0013] In the present invention, a M1C1-M2C2 -...- MiC1 -...- MnCn said solution or
sol of the precursor, wherein, is the number of elements in an array on, is an
integer of 2 , Mi represents the precursor of the metal element, the requirements of
the metal oxide of the element corresponds to the gas-sensitive semiconductor, Ci
represents the corresponding precursor solution or sol of the metal element
concentration 100-fold, MiCi to the array corresponds to the infusion section the ith element; i represents the number of array elements, which ranges from I to n, Ci
ranges from I to lOOmol / L;
[0014] Step 4 step heat treatment:
[0015] The template material through the membrane array of CNTs third
processing step carried out after the first step heat treatment to the precursor
solution of the metal salt or metal-containing organic compounds is converted to
the corresponding elements M0S, and sintered, or so that the precursor sol The
oxide sintered compact; and a second step heat treatment, i.e., heating is
continued so that CNTs template is sufficiently removed by oxidation, a gas sensor
array based on a plurality of different MOS sensor element having a porous
network structure.
[0016] The process of the present invention is based on CNTs sacrificial template,
a combination of screen printing, micro-infusion, and the sintering process, a
porous network structure in the surface of the sensor array in situ prepared MOS,
and the method can overcome the conventional sensor array Defects preparation

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure

methods, the preparation of a highly selective sensor arrays. Compared with the
prior art and the materials of the present invention has the following advantages:
[0017] 1. The solution to the traditional method of manufacturing a sensor
(materials synthesis and device fabrication separation) easy to damage the special
structure of the material shortcomings;
[0018] The traditional process of manufacturing the sensor is first combined into a
'sensitive material having a specific structure, and manufacturing and packaging
devices. MOS is a brittle material and the toughness is poor, which leads to the
preparation of the special structure of MOS device is easily destroyed in the
manufacturing process, so that did not play the role of a special structure. Material
of the present invention uses a method for preparing integrated device prepared
directly sensitive material having a specific structure in the surface of the sensor
array in situ, the preparation of materials and device fabrication together, avoiding
the special structure of the material is destroyed in the process of manufacture of
the device.
[0019] 2. The single-use screen printing to prepare a sensor array based on a
plurality of different sensor elements sensitive materials and sensitive material
having a porous network structure;
[0020] The traditional screen printing can only print one material to the preparation
of an array of a plurality of different sensors based on sensitive materials of the
sensor element, we need multi-pass, which makes the technology and complexity,
and sometimes it is difficult to achieved. The present invention is based on CNTs
sacrificial template method, combined with screen printing and micro-infusion
process, with only one screen printing combined with micro-infusion and
subsequent sintering in the sensor array can be manufactured in situ surface of a
porous network based on multiple MOS sensor array of sensor elements in
different structures.
The prepared sensor array [0021] 3. has good selectivity and a single sensor also
has high sensitivity and fast response rate;
[0022] Currently, the sensor array for reducing gas response can only be difficult to
pick out specific categories of gas. The present invention, the sensor array
according to Example 1, the parameter Znl5-Co05-1nl0-Sn20 manufacture of
HCHO, CH3COCH3 ^ C7H8, and large differences in response of NH3, with a
higher selectivity can be used to distinguish the type of gas, and a single sensor
also has high sensitivity and fast response speed characteristics.
[0023] The present invention provides a gas sensor having an array of a plurality of
different porous network structure of the MOS sensor elements exhibits a better
faster response, and have the advantage of a better selectivity for testing

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure

comprising various gases formaldehyde, methanol, toluene, ammonia, etc. and

their concentrations.
Brief Description
[0024] Figure 1 is a process for preparing a porous network structure having a
plurality of different sensor elements of the MOS sensor array based on a
schematic figure, 1- ceramic substrate, the first electrode is 2-, 3- heater, 4-CNTs
template material film 5-precursor / CNTs composite film, 6 MOS membrane
porous network structure;
4-element array of [0025] Figure 2 is based on Example 1 after pretreatment
X6mm) diagram in which, (a) an overall view (screen printing object) 4 array of a
plurality of devices, (b) an enlarged view of a single 4-element array ;
[0026] Figure 3 is based on Example 1 according to the screen-printed onto the
surface of the template material film FSEM photo CNTs on the array, wherein, (a) is
a low magnification photograph FSEM, (b) for high power FSEM photograph;
The sensor array consists of four physical surface of the photo MOS gas sensor
having a porous network structure composed of [0027] Figure 4 is prepared
according to Example 1 of the embodiment, wherein, ZnO gas sensitive element 1the membrane porous network structure, I1- porous network Co3O4 gas sensor
membrane structure, In2O3 gas sensor film II1- porous network structure, SnO2
gas sensor film IV- porous network structure;
[0028] FIG. 5 is based on the implementation of four kinds M0S 1 prepared in
Example on the sensor array having a porous network structure (Zn0, Co3O4,
In2O3 and SnO2) and the photo-sensitive element FSEM EDX spectrum, wherein,
(a) and ( b) for ZnO gas sensor membrane surface FSEM photo, (c) for the EDX
spectra of ZnO gas sensor membrane, (d) and (e) of Co3O4 gas sensor
membrane surface FSEM photos, (f) gas sensor for Co3O4 EDX spectra film, (g)
and (h) of In2O3 gas sensor membrane surface FSEM photos, for In2O3 gas
sensor film EDX spectrum, (j) and (k) of SnO2 gas sensor membrane surface
FSEM photos
(I) for the EDX spectra of SnO2 Gas Sensors film;
[0029] Figure 6 is the embodiment 1, the plurality of In2O3 film collected In2O3
powder XRD patterns;
[0030] Figure 7 is based on a single sensor In2O3 in Example 1 was implemented
in hierarchical porous structure at 300 C, with different concentrations of
formaldehyde gas sensitivity response curve;

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure

[0031] Figure 8 is based on an array of Example 1 was made up of four different

MOS-sensitive element consisting of a bar graph to different values in response to
the implementation of gas.
Specific embodiments
[0032] based on CNTs sacrificial template method, first using a screen printing
technique on a ceramic substrate pretreated get an array of CNTs template
material film, and then were injected into the use of micro-infusion process
template material in various CNTs membrane arrays different precursor solution or
sol, and finally heat treated to remove the template CNTs, in situ to give a part of
the genetic basis of a plurality of different sensor elements MOS sensor array
CNTs template porous network structure. Course of the process shown in Figure 1.
In this invention, the selection sensitive material precursor is critical, the metal
element contained in the request corresponds to the oxide is a gas-sensitive
semiconductor, the thermal decomposition temperature is lower than the oxidation
temperature CNTs started (450 C -550 C), and can be dissolved in a solvent or
may be prepared as a sol, the choice of the precursor with = Co (NO3) 2.6H20, In
(NO3) 3.5H20, Zn (CH3COO) 2.2H20, Cu (NO3) 2.3H20, Fe ( NO3) 3.9H20 and
SnCl4.5H20 metal salt solution, etc., Sn02, WO3, and TiO2 sol MOS etc., organic
solution of Ti (OC4H9) 4 (tetrabutyl titanate) and the like containing a metal
element, but is not limited to this, as long as meet the requirements can be. The
solvent may be water, ethanol, n-propanol, etc., but is not limited to this, as long as
can dissolve or disperse the precursor. [0033] The present invention relates to a
preparation method comprises the steps of:
[0034] (I) of the gas sensor array substrate pretreatment:
[0035] On the ceramic substrate followed by a clean screen printed electrodes and
heater, and in turn through leveling, drying and sintering;
[0036] (2) after pretreatment of the sensor array on the substrate, screen printed
CNTs template material film to obtain an array of CNTs template material film, and
the organic matter was removed by heat treatment is added to the printing paste;
[0037] (3) the preparation of the precursor solution or sol of the desired, water is
the preferred solvent, respectively, in each CNTs template material obtained CNTs
template material film infusion of different micro-arrays of film precursors, and
sonicated, The solution (or sol) CNTs penetrate the membrane;
[0038] M1C1-M2C2 -...- MiC1 -...- MnCn said solution or sol of the precursor,
wherein, is the number of array elements a, Mi represents the precursor of the
metal element, Ci represents the corresponding 100 times the precursor solution or
sol metal element concentration; i ranges from I to , metallic element precursor
solution or sol concentration range of 0.01mol / L-lmol / L, then Ci ranges I to

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure

100mol / L, concentration of the metal element is preferably a 0.05mol / L-0.2mol /

L. MiCi infusion corresponding to the array on the first i elements; infusion volume
is the area of CNTs film obtained by the screen printing decision, the amount of
infusion
0.1 L / mm2-0.3 L / mm2, preferably 0.2 L / mm2.
[0039] (4) of the array by different precursor / CNTs composite film composed of a
heat treatment step carried out, so that the precursor solution of the metal salt or
metal-containing organic compounds into the corresponding elements M0S, and
the oxide sintered followed by removal of CNTs, can be obtained by the gas sensor
array having a plurality of different porous network structure based MOS sensor
element.
[0040] during the heat treatment step should be heated:
[0041] The holding temperature of the first step of heating T1 satisfies: Td <T1 <T0,
so as to ensure that CNTs are not oxidized, and a metal salt or an organic metal
precursor is decomposed to the corresponding element and adheres to the CNTs
MOS surface, wherein, Td is a metal salt or metal-containing organic material
begins to decompose into a MOS element temperature, T0 is the temperature of
the beginning of oxidation CNTs; through the first heating step so that the precursor
solution of the metal salt or metal-containing organic compounds is converted to
the corresponding elements M0S and sintering, or direct the precursor sol to make
a sintered oxide.
[0042] The second step of heating the holding temperature T2 satisfy: T2> T0, in
order to ensure that the template is sufficiently removed by oxidation CNTs
wherein, T0 is the temperature of CNTs begins to oxidize.
[0043] Hereinafter, with reference to the specific embodiments of the present
invention will be further described. This needs to be noted that, for description of
these embodiments to assist in understanding the invention but are not intended to
limit the present invention. Moreover, various embodiments of the invention
described below are involved in the technical features as long as no conflict with
each other can be constituted in combination with each other.
[0044] Example 1:
[0045] Znl5-Co05-1nl0-Sn20 sensor array. Pretreatment of the substrate: ultrasonic
cleaning Al2O3 ceramic substrate, drying the substrate in a clean screen printing
on the gold electrode, leveling, drying and firing at 850 C furnace temperature,
the heater screen printing of ruthenium oxide, leveling, and dried , oven
temperature 850 C in sintering the substrate after pre-processing the sensor
array shown in Figure 2 a schematic view; screen printing to obtain an array of

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure

CNTs template material film composed of: After the pre-treatment of the sensor
array substrate, screen printing CNTs template material film to obtain an array of
CNTs template material film, and the heat treatment is 2 hours to remove the
organic matter added to the printing paste at 350 C, the resultant film surface
FSEM template material CNTs photograph shown in Figure 3; as used precursor
respectively, 0.15mol / L of Zn (CH3COO) 2.2H20 solution, 0.05mol / L of Co (NO3)
2.6H20 solution, 0.lmol / L of In (NO3) 3.5H2O aqueous solution of 0.2mol / L of
SnO2 aqueous sol; the heat treatment process is = T1 = 350 C, the heat 120min,
T2 = 650 C, the heat IOmin0 [0046] Figure 4 is a physical map of the sensor
array surface prepared, the array is composed of four kinds of different material
systems The gas sensor configuration. In order to observe whether the product
prepared porous network structure of CNTs inherited template, using a scanning
electron microscope, the film surface (FESEM FEI Sirion200) prepared observed,
which FSEM and EDX shown in Fig. Found four kinds of film in general is crisscrossed by quasi - nanometer fiber composition, porous, with an average diameter
of each fiber is about 50nm. For elemental analysis of the resulting film composed
of the film EDX analysis, the composition of elements are Al (part of the alumina
substrate), and the corresponding metal elements 0, the corresponding instructions
can M0S. To further verify whether the corresponding M0S, characterized by XRD
In2O3 film was collected from a plurality of In2O3 powder, the results shown in
Figure 6, it can be seen that all the diffraction peaks belong In2O3 body-centered
cubic structure (the lattice constant a = 1.009nm, corresponding to the standard
card 6-0416), and the respective diffraction peaks are relatively sharp, indicating
that the material has good crystallinity. In order to study the performance of a
single sensor gas sensing, In2O3 element to 300 C, the response 1-1OOppm
HCHO gas recovery curve shown in Figure 7, found that the elements of different
concentrations of formaldehyde gas have shown a good response - Reply
characteristics, response and recovery rate very quickly, with fast response rate,
and with increasing concentrations of formaldehyde gas, the response of the
sensor increases. Figure 8 shows a sensor array of four different materials from
the above-sensitive elements in the system to 300 C, of IOOppm of HCHO,
C7H8, NH3, and in response to the comparison of the value of the four gases
CH3COCH3, the selectivity of the resultant array can be better.
[0047] Example 2
[0048] ZnlO-ColO-1nlO-SnlO sensor array. According to the above steps, the
precursors used were 0.lmol / L of Zn (CH3COO) 2.2H20 solution, 0.lmol / L of Co
(NO3) 2.6H20 solution, 0.lmol / L of In (NO3) 3.5 H20 solution and 0.lmol / L of
SnO2 sol water; heat treatment process for = T1 = 350 C, the insulation 120min,
T2 = 650 C, the insulation IOmin0
[0049] Example 3

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure

[0050] Zn01-Co01-1n01-Sn01 sensor array. According to the above steps, the

precursors used were 0.01mol / L of Zn (CH3COO) 2.2H20 solution, 0.01mol / L of
Co (NO3) 2.6H20 solution, 0.01mol / L of In (NO3) 3.5H20 solution and 0.01mol / L
aqueous sol of SnO2; the heat treatment process is = T1 = 350 C, the heat
120min, T2 = 650 C, the heat IOmin0
[0051] Example 4
[0052] ZnlOO-ColOO-1nlOO-SnlOO sensor array. According to the above steps,
the precursors used were lmol / L of Zn (CH3COO) 2.2H20 solution, lmol / L of Co
(NO3) 2.6H20 solution, lmol / L of In (NO3) 3.520 solution and lmol / L The SnO2
sol water; heat treatment process for = T1 = 350 C, the insulation 120min, T2 =
650 C, the insulation IOmin.
[0053] Example 5
[0054] Cu20-Fe 15-Ti 10-W05 sensor array. According to the above steps, the
precursors used were 0.2mol / L of Cu (NO3) 2.3H20 solution, 0.15mol / L of Fe
(NO3) 3.9H20 solution, 0.lmol / L of Ti (OC4H9) 4 in ethanol and 0.05mol / L of
WO3 propanol sol; heat treatment process for = T1 = 400 C, the insulation
120min, T2 = 650 C, the insulation IOmin0
[0055] Example 6
[0056] CulO-FelO-TilO-WlO sensor array. According to the above steps, the
precursors used were
0.lmol / L of Cu (NO3) 2.3H20 solution, 0.lmol / L of Fe (NO3) 3.9H20 solution,
0.lmol / L of Ti (OC4H9) 4 in ethanol solution and 0.lmol / L of WO3 is propanol sol;
heat treatment process for = T1 = 400 C, the insulation 120min, T2 = 650 C, the
insulation IOmin0 [0057] Example 7
[0058] CuOl-FeOl-TiOl-WOl sensor array. According to the above steps, the
precursors used were 0.01mol / L of Cu (NO3) 2.3H20 solution, 0.01mol / L of Fe
(NO3) 3.9H20 solution, 0.01mol / L of Ti (OC4H9) 4 and the ethanol solution
0.01mol / L n-propanol sol of WO3; the heat treatment process is = T1 = 400 C,
the heat 120min, T2 = 650 C, the heat IOmin0
[0059] Example 8
[0060] CulOO-FelOO-TilOO-fflOO sensor array. According to the above steps, the
precursors used were IOOmoI / L of Cu (NO3) 2.3H20 solution, IOOmoI / L of Fe
(NO3) 3.9H20 solution, IOOmoI / L of Ti (OC4H9) 4 in ethanol solution and lOOmol
/ L The WO3 propanol sol; heat treatment process for = T1 = 400 C, the insulation
120min, T2 = 650 C, the insulation IOmin0

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure

[0061] In the present invention, the solvent and the precursor which is not limited to
the embodiments set forth several embodiments, as long as the metal salts of the
corresponding oxide is a semiconductor material, and can be dissolved or
dispersed in a solvent, . The sensor array is not limited to the preparation of the 4element array of the present invention is given, if the 6, 8, and other number of
elements constituting the columns of the array are integrated protection.
More preferred [0062] embodiment of the present invention only, but the present
invention should not be limited to the disclosed embodiments and the
accompanying drawings of the embodiments. Therefore, all equivalent or modified
without departing from the spirit of the present invention is accomplished under the
disclosed are within the scope of the claimed invention.
CLAIMS
1. A process for producing MOS gas sensor array, the method comprising the following
steps: Step I Pretreatment: on a clean screen printing electrodes of the ceramic substrate
and a heater successively and sequentially performed by the leveling, drying and firing to
give the sensor array substrate; a second step of screen printing CNTs template material:
After the substrate is pretreated sensor array, a screen printed CNTs template material film
to obtain a film of CNTs array template material and heat treated to remove the printing
paste Join organics; Step 3 infusion precursor solution or sol: template material,
respectively, in the respective CNTs obtained CNTs template material film array film
infusion of different precursor solution or sol, and sonicated, and the solution or sol
infiltration CNTs template material film; the present invention, a M1C1-M2C2 -...- MiC1 -...MnCn said solution or sol of the precursor, wherein, is the number of elements in an
array on, is greater than or equal an integer of 2, Mi represents the precursor of the
metal element, the requirements of the metal oxide of the corresponding element is a gassensitive semiconductor, Ci represents 100-fold the corresponding precursor solution or
sol of the metal element concentration, MiCi infusion corresponding to on the i-th element
of the array; i represents the number of array elements, which ranges from I to !!, Ci
ranges from I to lOOmol / L ;; step heat treatment step 4: 3 will go through CNTs array
template material film processing step after the first step heat treatment to the precursor
solution of the metal salt or metal-containing organic compounds is converted to the
corresponding elements M0S, and sintered, or so that the precursor oxide sintered sol;
and a second step heat treatment, i.e., heating is continued so that CNTs template is
sufficiently removed by oxidation, a gas sensor array having a plurality of different porous
network structure based MOS sensor element.
2. The production method according to any one of the MOS gas sensor array as claimed in
claim, characterized in that the third step, the precursor sol solution or infusion is the area
of the amount of CNTs film obtained by the screen printing decision.

CN103293186 (A) - Method for manufacturing metal oxide semiconductor

(MOS) gas sensor array with porous network structure
3. Preparation method of MOS gas sensor array according to any one of the preceding
claims, characterized in that, in step 3, the amount of infusion of the precursor solution or
sol of 0.1 L / mm2-0.3 L / mm2.
4. Preparation MOS gas sensor array according to any one of the preceding claims,
characterized in that the third step, the precursor solution or sol of a metal element
concentration in the range of 0.05mol / L-0.2mol / L.
5. A process according to any one of the MOS gas sensor array as claimed in claim
wherein the heat treatment step should be heated, the first step in a heated holding
temperature T1 satisfies: Td <T1 <T. A second step of heating the holding temperature T2
satisfy: T2> . , Where, Td is the metal salt begins to decompose into MOS temperature,
T0 is the temperature of the beginning of oxidation of the CNTs.
6. Preparation MOS gas sensor array according to any one of the preceding claims,
characterized in that the amount of infusion of the precursor solution or sol of 0.2 L /
mm2.
7. The production method according to any one of the MOS gas sensor array as claimed in
claim characterized in that the precursor of Co (NO3) 2.6H20, In (NO3) 3.5H20, Zn
(CH3COO) 2.2H20, Cu (NO3) 2.3 H20, Fe (NO3) 3.9H20 and SnCl4.5H20, SnO2 ^ ffO3
and TiO2, Ti, at least two (OC4H9) 4 in.
8. Preparation MOS gas sensor array according to any one of the preceding claims,
characterized in that the solvent or dispersant precursor is water, ethanol or n-propanol.
A use of claim 1 MOS gas sensor obtained by the method for preparing an array.