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California, Berkeley is to become a professional researcher and educator in these fields. I feel that I need
academic preparation beyond my undergraduate education in order to make the meaningful technical
contributions to society in my career. My main motivation for applying to the Electrical Engineering and
Computer Science program at UC Berkeley stems from the presence of numerous outstanding faculty
members with research interests aligned with my own.
My passion for the Nature at the nanoscale has developed as a gradual crescendo rather than in subito
steps. My self-motivated research on quantum confinement effects on the electrostatics of nanoscale
MOS structures at the end of 3rd year gave me the maiden insight into a quantum phenomenon in
nanostructure. Developing our own self-consistent 1-D Schrdinger-Poisson solver, I along with one of
my friends examined the effects of wave function penetration on the electron distribution in nanoscale
double gate MOSFETs. This research having won us the 1st prize in IEEE R-10 Student Paper Contest 06
spring-boarded our confidence to take up harder research challenges. As I started my senior year
research on computational nanoelectronics under Prof. Anisul Haque, my first challenge was to find a
suitable topic that was tractable under our capability and computation resources and through which we
can make a tangible contribution to this field. I delved through current research on nanoscale device
modeling and through Intl Technology Roadmap for Semiconductors (ITRS) to capture device scaling
trends and familiarized myself with the different device simulators available at the nanoHUB
(http://www.nanohub.org). I found that, although effects of wave function penetration into gate oxide
on different parameters (gate capacitance, drain current) of bulk MOSFETs have been examined, 2-D
effects, such as DIBL, which are extremely important to assess the effects of scaling on device
performance, have always been neglected in such studies. Hence, we decided pursue a systematic study
of how wave function penetration effects on ballistic drain current evolve with the scaling of dimensions
(gate length and silicon body thickness) of nanoscale double gate MOSFETs using a 2-D quantum ballistic
model. Besides taking courses like `Semiconductor Devices' and `Optoelectronic Devices' in my senior
level for this research, I took up the venturesome task to master the most advanced concepts in
quantum transport (QT) through Datta's seminal text `Quantum Transport: Atom to Transistor' on my
own. MATLAB coding of the QT equations gave me hands-on-experience on deep and diverse concepts
of QT in a short period of time. MOS electrostatics was treated by self-consistent solution of 2-D
Schrdinger and Poisson equations and I incorporated a non-equilibrium Greens function based
technique to apply open boundary condition at the gate-gate oxide interface for solving the 2-D
Schrdinger equation. As our work has almost ended, it is satisfying to mention that we are the first to
explain the relation between wave function penetration effects on drain current and device scaling and
submission of our manuscript to `J. Appl. Phys.' is in the offing. Through this research, I received an
excellent training on the art of scientific research - the art of explaining numerical results not as
mathematical or programming artifacts, rather as physical phenomena, the art of scientific writing
relying less on equations and using concepts accessible to intended audience, the exercise of analytical
ability and adherence, the spirit of intellectual integrity. The exposure and training I got from this
research makes me feel confident that I would be able to cope with nanoelectronics research at my
graduate level.
this group also interests me. Besides, I am also interested in Prof. Javeys work on nanowire fabrication
and Prof. Chang-Hasnains research on nano-optoelectronics.
As I see my 2nd year students grasping eagerly and proactively ideas of Moore's law, nanomachines,
top-down and bottom-up approaches in their first electronics course with me, I feel that I have an innate
capability to convey basic and new concepts and motivate students to explore and research. I will be
instructing the course `Energy Conversion III in January 08 semester and I plan to introduce elementary
concepts of nano/micro-electromechanical systems into its traditional syllabus. I believe that by being a
professor of nano-science and -engineering in a research university, I can contribute to further
Feynman's vision not only by advancing the state of the art, but also by illuminating new avenues of
thought for my students. Having mingled with the best minds of the South Asia from backgrounds as
diverse as from fine arts to engineering at the 1st SAARC University Students Exchange Program at Delhi
in Dec. 07, I could understand how people from other disciplines view the role of technology in shaping
societys future and I could perceive why it is necessary to guide technological developments to fulfill
societys expectations. As the future of nanotechnology has inspired as much caution as optimism, I
intend also to utilize my expertise into policy issues to safeguard its advancement towards a direction
that is peaceful and addresses some of the most intriguing problems of our society. University of
California, Berkeley with her strength on nano-research and long history of producing veritable leaders
in the science and technology arena will undoubtedly give me the perfect opportunity to fulfill these
academic and professional goals of mine.