Aptc60Hm70Bt3G: Full - Bridge + Boost Chopper Coolmos Power Module

APTC60HM70BT3G
CoolMOS Q1 to Q4:
VDSS = 600V
RDSon = 70m max @ Tj = 25C
Full Bridge + boost chopper

CoolMOS Power module
CoolMOS Q5:
VDSS = 600V
RDSon = 45m max @ Tj = 25C
Application
Solar converter
Features
CoolMOS
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
28 27 26
24
22 21
19 18 17
30
15
31
32
13
1
9 10
12
All multiple inputs and outputs must be shorted together

7/24 ; 5/26
Very low stray inductance

Kelvin source for easy drive
Internal thermistor for temperature monitoring
High level of integration
Benefits
Optimized conduction & switching losses
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
All ratings @ Tj = 25C unless otherwise specified

1. Full bridge switches
1.1 CoolMOS characteristics (Per CoolMOS)
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25C
Tc = 80C
Continuous Drain Current

Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25C
Max ratings
600
39
29
160
20
70
250
20
1
1800
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1 - 13
APTC60HM70BT3G Rev 1 October, 2012
Symbol
VDSS
APTC60HM70BT3G
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current

Drain Source on Resistance
Gate Threshold Voltage
Gate Source Leakage Current
Test Conditions
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Min
Typ
Tj = 25C
Tj = 125C
VGS = 10V, ID = 39A

VGS = VDS, ID = 2.7mA
VGS = 20 V, VDS = 0V
2.1
Min
Typ
7
2.56
0.21
Max
25
250
70
3.9
100
Unit
Max
Unit
A
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS = 10V
VBus = 300V
ID = 39A
Td(on)
Tr
Td(off)
Turn-on Delay Time

Rise Time
Turn-off Delay Time
Tf
Fall Time
Eoff
Turn-off Switching Energy
Eoff
RthJC
Junction to Case Thermal resistance
259
nC
29
111
21
Inductive Switching @ 125C

VGS = 15V
VBus = 400V
ID = 39A
RG = 5
VGS = 15V
VBus = 400V
ID = 39A
RG = 5
nF
30
ns
283
84
Tj = 25C
980
Tj = 125C
1206
J
0.5
C/W
Max
Unit
Source - Drain diode ratings and characteristics

IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Tc = 25C
Tc = 80C
Typ
39
29
VGS = 0V, IS = - 39A

IS = - 39A
VR = 350V
diS/dt = 100A/s
A
1.2
6
V
V/ns
Tj = 25C
580
ns
Tj = 25C
23
www.microsemi.com
2 - 13
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
di/dt 100A/s
VR VDSS
Tj 150C
IS - 39A
APTC60HM70BT3G
2. Boost chopper Q5, CR5
2.1 Q5 CoolMOS characteristics
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25C
Tc = 80C
Continuous Drain Current

Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25C
Max ratings
600
49
38
130
20
45
250
15
3
1900
Unit
V
A
V
m
W
A
mJ
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current

Drain Source on Resistance
Gate Threshold Voltage
Gate Source Leakage Current
Test Conditions
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Min
Typ
Tj = 25C
Tj = 125C
VGS = 10V, ID = 24.5A

VGS = VDS, ID = 3mA
VGS = 20 V, VDS = 0V
2.1
40
3
Max
250
500
45
3.9
100
Unit
Max
Unit
A
m
V
nA
Dynamic Characteristics
Qg
Total gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Eon
Turn-on Switching Energy
Eoff
RthJC
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
VGS = 10V
VBus = 300V
ID = 49A
Inductive Switching (125C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5
Inductive switching @ 25C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
Inductive switching @ 125C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
Min
Typ
7.2
8.5
nF
150
nC
34
51
21
30
ns
100
45
675
520
1096
635
0.5
www.microsemi.com
C/W
3 - 13
Input Capacitance
Ciss
Coss
Output Capacitance
APTC60HM70BT3G
Source - Drain diode ratings and characteristics
IS
Continuous Source current
(Body diode)
VSD
dv/dt Peak Diode Recovery
trr
Qrr
Test Conditions
Min
Tc = 25C
Tc = 80C
Typ
49
38
VGS = 0V, IS = - 49A

IS = - 49A
VR = 350V
diS/dt = 100A/s
Max
Unit
A
1.2
4
V
V/ns
Tj = 25C
600
ns
Tj = 25C
17
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
di/dt 100A/s
VR VDSS
Tj 150C
IS - 49A
2.2 Chopper diode characteristics (CR5)

VRRM
IRM
IF
VF
Maximum Reverse Leakage Current
Min
Qrr
Typ
Max
600
VR=600V
DC Forward Current
trr
RthJC
Test Conditions
Maximum Peak Repetitive Reverse Voltage
IF = 30A
VR = 400V
di/dt =200A/s
Tj = 25C
Tj = 125C
25
500
Tc = 80C
IF = 30A
IF = 60A
IF = 30A
Unit
Tj = 125C
30
1.8
2.2
1.5
Tj = 25C
25
Tj = 125C
Tj = 25C
160
35
Tj = 125C
480
A
A
2.2
V
ns
nC
1.2
C/W
3. By pass diode (CR6)

Symbol
VR
VRRM
IF
IFSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
DC Forward Current
Non-Repetitive Forward Surge Current
t=10ms
Max ratings
Unit
1600
40
400
TC = 80C
TJ = 45C
Test Conditions
IR
Reverse Current
VR = 1600V
VF
Forward Voltage
IF = 40A
VT
rT
RthJC
On state Voltage
On state Slope resistance
Min
Tj = 25C
Tj = 125C
Tj = 25C
Tj = 125C
Typ
Max
20
2
1.3
1.1
0.8
10.5
A
mA
V
V
m
1.5
www.microsemi.com
Unit
C/W
4 - 13
APTC60HM70BT3G
4. Temperature sensor
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
R25/R25
B25/85
B/B
Characteristic
Resistance @ 25C
Min
Typ
50
5
3952
4
Max
Unit
k
%
K
%
Min
4000
-40
-40
-40
2
Typ
Max
Unit
V
T25 = 298.15 K
TC=100C
RT
R 25
T: Thermistor temperature
1 1 RT: Thermistor value at T

exp B 25 / 85

T25 T
5. Package characteristics
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range

Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
150
125
100
3
110
C
N.m
g
6. SP3F Package outline (dimensions in mm)
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5 - 13
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
APTC60HM70BT3G
7. Full bridge switches curves (Per CoolMOS)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (C/W)
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.3
0.2
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
10
rectangular Pulse Duration (Seconds)

Transfert Characteristics
Low Voltage Output Characteristics

140
160
VGS=15&10V
ID, Drain Current (A)
6.5V
6V
120
5.5V
80
5V
40
4.5V
100
4V
0
5
10
15
20
VDS, Drain to Source Voltage (V)
60
40
TJ=125C
20
25
TJ=25C
Capacitance vs Drain to Source Voltage
Coss
1000
Crss
100
ID, DC Drain Current (A)
Ciss
10000
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature

40
100000
C, Capacitance (pF)
80
0
0
35
30
25
20
15
10
5
0
10
Breakdown Voltage vs Temperature

1.2
1.1
1.0
0.9
0.8
25
25
10
20
30
40
50
50
75
100
125
150
RDS(on), Drain to Source ON resistance

(Normalized)
BVDSS, Drain to Source Breakdown

Voltage (Normalized)
VDS > ID(on)xRDS(on)MAX

250s pulse test @ < 0.5 duty cycle
120
TJ, Junction Temperature (C)
www.microsemi.com
50
75
100
125
TC, Case Temperature (C)
150
ON resistance vs Temperature
3.0
VGS=10V
ID= 39A
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
6 - 13
200
APTC60HM70BT3G
Delay Times vs Current
350
td(off)
300
250
150
80
tr and tf (ns)
VDS=400V
RG=5
TJ=125C
L=100H
200
100
50
VDS=400V
RG=5
TJ=125C
L=100H
100
60
40
tr
20
td(on)
10
20
30
40
50
60
70
10
20
Switching Energy (mJ)
50
60
70
Switching Energy vs Gate Resistance
1.5
Eoff
1
0.5
VDS=400V
ID=39A
TJ=125C
L=100H
4
3
Eoff
2
1
0
0
10
20 30 40 50
60
70
Source to Drain Diode Forward Voltage

1000
Operating Frequency vs Drain Current

IDR, Reverse Drain Current (A)
VDS=400V
D=50%
RG=5
TJ=125C
TC=75C
400
300
ZVS
200
100
0
15
20
25
30
0.5
0.7
0.9
1.1
1.3
1.5
Gate Charge vs Gate to Source Voltage

0.9
0.8
0.7
0.6
100
1
VSD, Source to Drain Voltage (V)
1.0
75
TJ=25C
10
0.3
Threshold Voltage vs Temperature
50
TJ=150C
100
35
1.1
25
5 10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
500
Frequency (kHz)
40
VDS=400V
RG=5
TJ=125C
L=100H
30
Switching Energy vs Current

2.5
VGS(TH), Threshold Voltage

(Normalized)
tf
125
14
ID=39A
TJ=25C
12
10
150
www.microsemi.com
VDS=120V
VDS=300V
VDS=480V
6
4
2
0
0
50
100 150 200

Gate Charge (nC)
250
300
7 - 13
td(on) and td(off) (ns)
Rise and Fall times vs Current

120
APTC60HM70BT3G
8. Chopper CoolMOS
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
10
rectangular Pulse Duration (Seconds)

Transfert Characteristics
Low Voltage Output Characteristics

140
360
VGS=15&10V
6.5V
280
6V
240
200
5.5V
160
120
5V
80
4.5V
40
4V
100
80
60
40
TJ=125C
20
TJ=25C
0
0
5
10
15
20
25
Normalized to
VGS=10V @ 50A
1.25
1.2
VGS=10V
1.15
1.1
1
2
3
4
5
6
DC Drain Current vs Case Temperature

50
RDS(on) vs Drain Current

1.3
VGS=20V
1.05
1
0.95
0.9
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS > ID(on)xRDS(on)MAX

250s pulse test @ < 0.5 duty cycle
120
40
30
20
10
0
20
40
60
80
100 120 140
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25
50
75
100
125
150
8 - 13
320
1.1
1.0
0.9
0.8
25
50
75
100
125
150
ON resistance vs Temperature
3.0
2.0
1.5
1.0
0.5
0.0
25
1000
1.0
VGS(TH), Threshold Voltage

(Normalized)
50
75
100
125
150
Maximum Safe Operating Area
Threshold Voltage vs Temperature

1.1
0.9
0.8
0.7
limited by RDSon
100
100 s
1 ms
Single pulse
TJ=150C
TC=25C
10
0.6
10 ms
1
25
50
75
100
125
150
Coss
Ciss
10000
1000
Crss
100
10
0
10
20
30
40
50
www.microsemi.com
100
1000
Gate Charge vs Gate to Source Voltage

Capacitance vs Drain to Source Voltage

100000
10
C, Capacitance (pF)
VGS=10V
ID= 50A
2.5
12
ID=50A
TJ=25C
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0
20
40
60 80 100 120 140 160

Gate Charge (nC)
9 - 13
BVDSS, Drain to Source Breakdown

Voltage (Normalized)
Breakdown Voltage vs Temperature

1.2
RDS(on), Drain to Source ON resistance

(Normalized)
APTC60HM70BT3G
APTC60HM70BT3G
Delay Times vs Current
140
Rise and Fall times vs Current

70
td(off)
100
VDS=400V
RG=5
TJ=125C
L=100H
80
60
40
VDS=400V
RG=5
TJ=125C
L=100H
60
50
tr and tf (ns)
tf
40
30
tr
20
td(on)
20
10
10
20 30 40 50
60 70 80
10
20
1.6
Eon
1.2
Eoff
0.8
0.4
VDS=400V
ID=50A
TJ=125C
L=100H
2
1.5
60
70
80
Eoff
Eon
1
0.5
0
10
20 30 40 50 60
70
80
Operating Frequency vs Drain Current

ZVS
ZCS
200
VDS=400V
D=50%
RG=5
TJ=125C
TC=75C
150
hard
switching
100
50
0
5
10
20
30
40
50
Gate Resistance (Ohms)
300
250
10 15 20 25 30 35 40 45 50
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Source to Drain Diode Forward Voltage

1000
IDR, Reverse Drain Current (A)
Frequency (kHz)
50
Switching Energy vs Gate Resistance

2.5
VDS=400V
RG=5
TJ=125C
L=100H
40
Switching Energy vs Current

2
30
TJ=150C
100
TJ=25C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
10 - 13
td(on) and td(off) (ns)
120
APTC60HM70BT3G
9. Chopper diode curves
1.4
1.2
D = 0.9
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
10
Rectangular Pulse Duration (Seconds)

Forward Current vs Forward Voltage
trr, Reverse Recovery Time (ns)
IF, Forward Current (A)
Trr vs. Current Rate of Charge
175
60
50
TJ=125C
40
30
20
TJ=25C
10
0
0.0
0.5
1.0
1.5
2.0
TJ=125C
VR=400V
150
125
60 A
100
30 A
75
15 A
50
2.5
200
TJ=125C
VR=400V
60 A
1.0
30 A
15 A
0.5
0.0
0
200
400
600
800
1000 1200
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (C)
QRR vs. Current Rate Charge
1.5
400
600
800
1000 1200
-diF/dt (A/s)
VF, Anode to Cathode Voltage (V)
-diF/dt (A/s)
IRRM vs. Current Rate of Charge
25
TJ=125C
VR=400V
20
30 A
60 A
15
15 A
10
5
0
0
200
400
600
800
1000 1200
-diF/dt (A/s)
Capacitance vs. Reverse Voltage

200
150
125
100
75
50
25
0
1
10
100
1000
VR, Reverse Voltage (V)
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11 - 13
C, Capacitance (pF)
175
APTC60HM70BT3G
10. Typical by pass CR6 diode curves
Forward Characteristic
Non-Repetitive Forward Surge Current

400
80
300
TJ=125C
IFSM (A)
IF (A)
60
40
TJ=45C
TJ=125C
200
100
20
TJ=25C
0
0.0
0.4
0.8
1.2
1.6
50Hz
80% VRRM
0
0.01
2.0
0.1
t (s)
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

1.6
1.4
0.9
1.2
0.7
1
0.8
0.5
0.6
0.3
0.4
0.2
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
10
COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. COOLMOS is a trademark of Infineon
Technologies AG.
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12 - 13
Rectangular Pulse Duration in Seconds
APTC60HM70BT3G
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Aptc60Hm70Bt3G: Full - Bridge + Boost Chopper Coolmos Power Module

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Aptc60Hm70Bt3G: Full - Bridge + Boost Chopper Coolmos Power Module

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APTC60HM70BT3G

Full Bridge + boost chopper

All multiple inputs and outputs must be shorted together

Very low stray inductance

All ratings @ Tj = 25C unless otherwise specified

Continuous Drain Current

APTC60HM70BT3G Rev 1 October, 2012

Zero Gate Voltage Drain Current

VGS = 10V, ID = 39A

Total gate Charge

Gate Source Charge

Gate Drain Charge

Turn-on Delay Time

Turn-off Switching Energy

Turn-off Switching Energy

Junction to Case Thermal resistance

Inductive Switching @ 125C

Source - Drain diode ratings and characteristics

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0V, IS = - 39A

APTC60HM70BT3G Rev 1 October, 2012

Continuous Drain Current

Zero Gate Voltage Drain Current

VGS = 10V, ID = 24.5A

Total gate Charge

Gate Source Charge

Gate Drain Charge

Turn-on Delay Time

Turn-on Switching Energy

Turn-off Switching Energy

Turn-on Switching Energy

Turn-off Switching Energy

Junction to Case Thermal resistance

APTC60HM70BT3G Rev 1 October, 2012

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0V, IS = - 49A

2.2 Chopper diode characteristics (CR5)

Maximum Reverse Leakage Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Maximum Peak Repetitive Reverse Voltage

Junction to Case Thermal resistance

3. By pass diode (CR6)

APTC60HM70BT3G Rev 1 October, 2012

1 1 RT: Thermistor value at T

Operating junction temperature range

6. SP3F Package outline (dimensions in mm)

APTC60HM70BT3G Rev 1 October, 2012

Thermal Impedance (C/W)

rectangular Pulse Duration (Seconds)

Low Voltage Output Characteristics

ID, Drain Current (A)

Capacitance vs Drain to Source Voltage

ID, DC Drain Current (A)

DC Drain Current vs Case Temperature

Breakdown Voltage vs Temperature

RDS(on), Drain to Source ON resistance

BVDSS, Drain to Source Breakdown

VDS > ID(on)xRDS(on)MAX

TJ, Junction Temperature (C)