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ML
W. F. LOVERING
In the design of semiconductor devices, to maximise performance it is often necessary to strike a balance between
doping heavily to reduce series resistance and reducing
impurity concentration to raise the breakdown voltage. The
calculations needed for an optimum design are complicated,
because there is no simple relationship between the carrier
concentration n and the conductivity nepi, and the mobility n
is itself a complex function of n. The mobility in any doped
semiconductor is limited by two scattering processes: lattice
scattering and impurity scattering. The mobility limit due to
lattice scattering HL has been calculated for most semiconductors of device interest, and can be assumed to be a
fixed parameter. Various formulas have been suggested for
impurity scattering, but most reduce to a relationship of the
where N is the impurity
form Mi = Aj{N(B-CxInN},
concentration. Since the resultant mobility is due to the
combination of the two relaxation times, it is tempting to
combine the scattering mechanisms by the equation
1
ML
Mi
10
Fig. 1
a
b
c
d
Vol. 10 No. 13
K>
ND,crrr3
Dependence of mobility on donor concentration
T= 300 K
2
GaAs;/* L = 10 000cm
/Vs
2
InP; fiL = 5700 cm
/Vs
2
S\;HL = 1400 cm /Vs
Ge; ML = 4200 cm 2 /Vs
259
UL/{i+V(ND/\017)}
n/D{N2jkl-(Nki-Nkj)(Nkl-Nli)
iVV. = dNiJkl +
+
(Nki-NkJ)(Nkj~NlJ)}
= dNlJkl
(3)
References
1 CONWELL, E. M.: 'Properties of silicon and germanium', Proc. Inst.
Radio Eng., 1952, 40, pp. 1327-1337
2 MOLL, J. L.: 'Physics of semiconductors' (McGraw-Hill, 1964),
pp. 192-193
3 RODE, D. L.: 'Electron transport in GaAs', Phys. Rev., 1971, 3B, pp.
2534-2541
4 RODE, D. L.: 'Electron transport in InSb, InAs and InP', ibid., 1971,
3B, pp. 327-3299
(2)
n/D{NNlJkl-(N.l-NJ)(Nk.-Nl.)}
(4)
(5)
n'/D'{N'pqN'iJkl-(N'pl-N'pjWkg-N'lq)}
. . .
(6)
n/D{NtjklNpl-(Npl-Npj)(Nki-Nlt)}
n/D{NlJNpl-NkjNpt+NPJNkt-NpjNll}
and
N'pJ = dN
so that
Similarly,
N'kq-N'lq
= d(Nkq-Nlq)
n'/D'dN'pqNiJkl-d2(Npi-NpjXNkq-Nlq)
(7)
dNpq+(l+b)nlD{NpqNijkl-(Npl-Npj)(Nkq-Nlq)}