Vol. I HDMAbout Volume II This Designer's Manual is specifically dedicated to International Rectifier’s commercial line of HEXFET surface mount (D-Pak, I-Pak, SOT89) and DIP devices. These power MOSFETs are recognized throughout the world as the industry standard for ruggedness, low Rosier), and consistency of mechanical and electrical specifications. To locate the device to fll your specific design needs, see the Table of Contents and/or Selector Guide section. DATA SHEETS The technical data sheets contained in this Volume |I cover all product upgrades, as well as our new HEXFET Ill generation of power MOSFETs. You are invited to contact your local IR field representative or our home office for additional product data or applications assistance. OTHER PUBLICATIONS International Rectifier also has Designer's Manuals covering 10-220, TO-3P, FullPaks, and other HEXFET devices, as well as separate manuals for government and space products, and applications and reliability data. These and other technical publications featuring IGBTS, power ICs, etc., are listed in the Available Literature section of this Designer's Manual. For ordering information, see page 156. HEXFET is a trademark of International RectifierInternational [zr] Rectifier HEXFET DESIGNER’S MANUAL Dil PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 © 1991 International Rectifier Printed in US.A. 0691-650International Rectifier IgaR HEXFET DESIGNER’S MANUAL Volume II POWER MOSFETs DIP, D-PAK, I-PAK, and SOT-89 HDM-1 First Printing PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 © 1901 International Rectir Printed in US.A. O691-M50—— HEXFET Power MOSFETs —————— LT An Introduction to HEXFET Power MOSFETs Foreword ‘Since the introduction of the HEXFET power MOSFET in 1979, International Rectifier has become the acknowledged technology and market leader in power MOSFETs worldwide. HEXFETs set the standard for the industry in device characteristics and ratings, product quality and reliability, and breadth of line. HEXFET Ill devices, specially designed for high-volume low-cost manufacture at HEXFET ‘America, are recognized as the most rugged standard-product power MOSFET in the industry. Introduced in late 1986, HEXFET II! devices are so rugged that designers can eliminate external protection circuitry and more readily use HEXFETS in such applications as motor control ‘and power supplies. International Rectifier provides three key ruggedness ratings on HEXFET Ml devices: ‘Single-shot avalanche energy to accommodate occasional high-energy over- voltage transients. Repetitive avalanche energy to eliminate external protection circuitry. Dynamic dvidt capability to withstand harsh conditions in motor control and similar applications without externally-connected diodes. HEXFET Ill cell density has been optimized for each voltage range to provide lower on- resistance per unit area, HEXFET power MOSFETS remain the first choice for the full range ‘of commercial, industrial, and aerospaceldefense power supply and motor control applications. Producing HEXFET Ill power MOSFETs at HEXFET America, International Rectifier integrates design, process, and manufacturing to provide the world’s most reliable power MOSFET at the lowest cost-per-amp. ‘Tne information presented in this publication belavd tobe secure and rliable. Howaver,Itanatonal ect can assume no ‘eeponsby for fo use nor enynerngorent of patents or hor rights ltr partis which may resi rom ts use, No icone is oar Iyapntan hr a obo ro of ral Rett No Patt ay sal eee rt ‘route o device descbed herein. Intsatona)Recfer doesnot ecommand te us a ts devices ine support appicatons wherein such use may cect treaton ite DRty duet dee tare oF maluncon. Usrs of nemational Restor devices me support appiaions assume al ik of such the and indemniosrtrnatonal Rectan agains ll damages reuting from such vse. ‘copyright 106, irtrnaonaReciter Corporton, El Segundo, CA. Al rights reserved Reprodsclon or uae of eater pectoral comet without express permission i wing Is ProhedHEXFET Power MOSFETs Table of Contents HEXFET Power MOSFETs Alpha-Numeric Index ... Product Selection Guide . Package Styles, Channel DIP, N-Channel . 1 DIP, P-Channel . 39 D-Pak and |-Pak, N-Channel 63 D-Pak and |-Pak, P-Channel . 105 SOT89 .... eee ear era ee 131 Logic Level Devices DIPs .... 133 D-Paks and I-Paks .. 141 Appendices Appendix A: Peak Diode Recovery dv/dt Test Circuit . 149 Appendix B: Package Outline Mechanical Drawings . 151 Appendix C: Tape and Reel Information 153 Appendix D: Part Marking Information . 155 Appendix E: Other Available Literature .. 156 Other Surface Mount Products ......................0000005 157 Worldwide Operations . Back CoverAlpha-Numeric Index Part Number Page IRFDO14.. IRFD024.. IRFD110. IRFD120.. IRFD1Z0. IRFD210.. IRFR024/U024. IRFR110/U110.. IRFR120/U120. IRFR210/U210 IRFR214/U214 IRFR220/U220 Part Number IRFR224/U224. IRFR310/U31 IRFR320/U320. IRFR420/U420... IRFR9014/U9014. IRFR9024/U9024. IRFR9110/U911 IRFR9120/U9120. IRFR9210/U9210. IRFR9220/U9220. IRFRC20/UC20. IRLRO14/U01 IRLR024/U024. IRLR110/U11 IRLR120/U12 International {rer)RectifierSelection Guide Logic Level D-Pak (5 volt gate) BVpgs Drain- | Rogien Drain- | Ip Continuous | low Max. to-Source tee On | Brain Current | Pulsed Drain Breakdown | Resistance | 25°C Current Part Number (Volts) (Q) (Amps) (Amps) Page Number | Case Style IRLROA 60 020 85 31 141 IRLRO2S 0.10 16 64 143 IRLANIO 400 054 46 18 145 IRLR120 027 84 3a 147 oe Logic Level DIP (5 volt gate) BVpsg Drain- | Rogien) Drain- | lp Continuous | low Max. to-Sourcs | to-Source On | Drain Current | Pulsed Drain Breakdown | Resistance | 25:0 Current Part Number (Volts) (Q) (Amps) (Amps) Page Number | Case Style IRLDO18 60 0.20 17 14 133 1ALDO24 0.10 25 20 135 IRLDI10 100 054 10 80 137] HD-1 | E IRLD120 027 13 10 139 Logic Level |-Pak (5 volt gate) BVpgs Drain- | Rosion) Drain- | fp Continuous ] Tow Max. to-Source | to-Soutoe On | Drain Current | Pulsed Drain Breakdown | Resistance | 25°C Current Part Number (Votts) (a) (Amps) (Amps) _|PageNumber| Case Stylo IRLUOI4 60 020 8s 3 141 IRLUO24 0.10 16 64 143 IRLUNIO 100 054 46 18 145 IRLUT20 o27 a4 at 147 |-Pak TO-2S1AA zer|RectifierSelection Guide SOT-89 BVogs Drain- | Psion) Drain- | fp Continuous | Tow Max. to-Soures | to-Source On | Drain Current | Pulsed Drain Breakdown | Resistance 25°C Current PartNumber | _(Votts) @) (Amps) (Amps) _|PageNumber| Case Siyle IRFS1Z0 100 24 0.90 36 131 oe SOT-89 D-Pak N-Channel BVoss Drain- | Roston) Drain- | fp Continuous | — tow Max. to-Source | to-Source On | Drain Current | Pulsed Drain Breakdown | Resistance 25°C Current Part Number | (Volts) @ (amps) (Amps) _|PageNumber| Case Style TRFROT 60 020 4 34 6 IRFRO24 0.10 16 64 69 IRFRI10 100 0.54 47 19 75 IRFRI20 o27 84 34 at IRFR210 200 15 27 80 87 \RFR220, 0.80 43 18 95 IRFR214 250 20 22 a8 89 IRFR224 44 38 14 97 D-Pak IRFRS10 “400 36 17 50 99 TO2520A IRFR320 18 3a rn 101 IRFR420 500 30 24 80 403 1BFRO20 600 44 20 80 129 D-Pak P-Channel BVpss Drain- Tp Continuous | Tou Mi to-Source Drain Current | Pulsed Drain Breakdown | Resistance 25°C Current Part Number | _ (Vols) @) (amps) (Amps) _|Page Number | Case Style 1RFR9014 60 050 56 “22 105 IRFR9O24 0.28 96 38 te TRFRST10, “100 12 34 “14 117 IRFR9120 0.60 63 25 119 TRFRS210, 200 30 20 “80 125 D-Pak IRFR9220, 15 36 14 127 TO-2528A vi rer) RectifierSelection Guide DIP N-Channel ‘BVpss Drain- | Rosjen) Drain- | Ip Continuous | Tou Max. 1o-Souree | to-Souree On | Drain Curent | Pulsed Drain Breakdown | Resistance 25°C Current Part Number | _ (Volts) @) (Amps) (Amps) _|PageNumber| Case Style IRFDOT4 0 020 17 14 1 IRFDO24 0.10 25 20 iz IRFD1Z0 100 24 0.50 40 25 IRFD110 054 1.0 80 13 IRFD120 027 13 10 19 IRFD210 200 15 0.60 48 at HD-1 IRFD220 0.80 0.80 64 37 DIP P-Channel BVpgs Drain- | Rogien) Drain- | Ip Continuous | Ip Max. to-Source | to-Soutoe On | Drain Current | Puised Drain Breakdown | Resistance Current Part Number | (Volts) (a) (Amps) _|Page Number | Case Style TRFOS014 60 0.50 88 38 IRFD9024 0.28 13, a TAFDST1O “100 12 56 a7 IRFOS120 0.60 8.0 53 HD-1 TAFDS210 "200 30 “32 8 IRFO9220 15 46 st |-Pak N-Channel ‘BVp55 Drain- | Posten) Drain- | Ip Continuous | low Max. to-Source | to-Source On | Drain Current | Pulsed Drain Breakdown | Resistance 25°C Current Part Number | (Volts) (Q) (Amps) (Amps) _|PageNumber| Case Style IRFUOTS 60 020 a4 34 cy IRFUG24 0.10 16 64 69 IRFUTIO 100 054 a7 19 75 IRFUIZ0 027 84 34 81 1RFU210 200 15 27 80 87 1RFUZ20 0.80 48 18 95 j WRFU214 250 20 22 es 89 IRFUZ24 44 38 14 7 1RFU31O 400 36 17 50 99 IRFUSz0 18 34 rn 101 |-Pak IRFU420 500 3.0 24 80 103 ae IRFUCZ0 600 44 20 80 128 International {ror|Rectifier viiSelection Guide |-Pak P-Channel BVoss Drain- | Rogen Draln- [fp Continuous | _ tow Max. to-Source | to-Source On | Drain Current | Pulsed Drain Breakdown | Resistance | 25°C Current PartNumber | (Volts) @) (Amps) (Amps) _|Page Number | Case Siyle IRFUSOT4 60 050 56 22 105 IRFU9024 02a 96 38 a TaFUSTIO | __-100 12 34 “14 117 IRFUS120 0.80 63 25 119 TRFUS2I0. | 200 30 20 80 15 |-Pak 1RFU9220 15 38 14 127 TO.2518A Data Sheets ‘The HEXFET deviees listed in this Designer's Manual fepresent International Rectii’s power MOSFET line fas of June, 1991, The deta presented in this man ‘supersedes all previous specifications, In the interest of product improvement, Iniematonal Rector ravers the sigh to change spctications witout neice, viiiInternational zeR|Rectifier PD-9.700 IRFDO14 HEXFET® Power MOSFET * Dynamic dv/dt Rated + For Automatic Insertion Vv, Vv + End Stackable BVoss 60 Rosen) 0.200 Ip 1.7A n-channel Description - ‘Third Generation HEXFETS from Intemational Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The 4-pin DIP package is a low cost machine insertable case style which can tbe stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Max. Units lp @ Te = 25°C __| Continuous Drain Currant, Ves@10V 17 lp @ Te= 100°C _| Continuous Drain Current, Vos@10V 12 A low Pulsed Drain Currant © 4 Po@ Te = 25°C _| Maximum Power Dissipation 13 Ww Linear Derating Factor 0.0088 WiKO VY, ‘Gate-fo-Source Breakdown Volage 320 Vv [Ene ‘Singlo Pulse Avalanche Energy @ 130 nd levee Peak Diode Recovery dvidt © 45 Wis) It Operating Junction and “5510 4175 Tete Storage Temperature Range *c Soldering Temperature, for 10 see. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Max. Units Raa ‘Junction-to-Ambient, Typical Socket Mount 120 kwIRFD014 [TOR eee Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. | Typ. [Max. | Units Test Conditions [BVoss | Drain-to-Source Breakdown Volage | 60 | | — | V _|Vas-OV, Ipn250uA [ABVoss/AT, | Temp. Coefficient of Breakdown Voltage | —- |0.063| — | Vi°C |Relerence to 25°C, lo=tmA. Rosie __ | Static Drain-to-Source On Resistance | — 020 | 2 _|Vase10V, Ip =1.080 [Vosiny | Gate Threshold Voltage 20 40 [| _V_[Vos=Vos: lo-2501A Se Forward Transconductance: 13 = |S _[Vps=25V, lpget 0A loss Zero Gate Voltage Collector Current | 250 | HA |Vos=60V, VaseOV Vos=48V, Vas=0V, 1y=150°C loss Gate-to-Source Forward Leakage wa [Was=20V. Gate-io-Source Reverse Leakage = Vos=-20V [&; [Total Gate Charge Ipe0A, VognABV, Vos=10V [Os [Gate-1o-Source Charge nC | Soe Fig 6 and 13@ Os [Gateto-Drain (Miller) Charge tow Turn-On Delay Time Voo-30V, lp=t0A he Rise Time ns |Ron240, Rpe2.72 tom Turn-Off Delay Time = See Fig. 10 u Fall Time te Internal Drain Inductance Bolweon lead, ‘6mm (0.25in.) 2 re Taternal Source Inductance momen Bek Pere 7 contact. af Ca Tnput Capacitance 310 Vase0V, Vose25v Coss [Output Capacitance 160 pF | fa1.0Mnz on Roverse Transfer Capacitance a7 f= Soo Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter ‘Min. | Typ. | Max. [ Units "Test Conditions is Continuous Source Current ~ p=). © ‘a oe low Pulsed Source Current —~|-|[ integral reverse (Body Diode) © pn junction diode. fs Vso Diode Forward Voltage == [= [16 | V_[in25°6, iga-7A, Ves0VO te Floverse Recovery Time 34 140 [ns _|Ty=25°C, Ip=t0A, Orn Reverse Recovery Charge 0.086) (0.40 | HC |difstet00AuS® ton Forward Turn-On Time intrinsic Turn-on time i nogigRle (turn-on f dominated by Ls + La) Notes: © Repetitive rating; Pulse width limited by @ gg S10A, didts90A\us, VoosBVoss, © Mounting surtace: ‘max. junction temperature (See figure 11) Tjs175°C Suggested Rgw240. flat, smooth, greased ®Voo=25V, Starting Ty-25°C, L=55mH, © Pulse width < 300s; duty Cycle <2% = OKA = CW Fig=252, Peak Inge1.7A (Seo figure 12)IRFD014 |p, Drain Current (amps) Ip, Drain Current (amps) 450 LL 20us PULSE. WIDTH Te = e59C wT 0 oF Vps, Drain-to-Source Voltage (volts) Fig1. Typical Output Characteristics, To = 25°C Vos = 25 20us PULSE WIOTH Vos, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics 0 ‘0 Ip, Drain Current (amps) BOus PULSE WIDTH Te = 1758C wot ‘0 oF Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To = 150°C 3 3° aoe T Sos é S20 {++} Ss 82 Sais Be gz Beso g £ ELA zoos i ee ves = 107 eo 40-20 0 20 «0 60 60 100 120 v40 160 180 Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. TemperatureIRFDO14 [TOR] 600 ee) om mT star] & Vas. Gate-to-Source Vottaae (volts) 8 Capacitance (pF) E Pht _| Peer rer) Lebel SEE FIGURE 13 io ‘7 °o > ° Sree ieccie: Vos. Drain-to-Source Voltage (volts) 4g, Total Gate Charge (nC) Fig5. Typical Capacitance Vs. Drain- Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage 102 OPERATION IN THIS AREA LIMITED 8 Fos on) 104] 109 Ip, Drain Current (Amps) Igo, Reverse Drain Current (Amps) : 7 Te25P 1 1Sra7sve , | vos Vf gy STaece pus woo 05 7.0 7.5 zo 25 ‘oa? 8 a ® 5 ao f 5 tre FS aoF Vso, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig7. Typical Source-Drain Diode Fig8. Maximum Safe Operating Area Forward Voltage[TOR] 20 16 0.8 IRFDO14 Ip, Drain Current (amps) eee «LLL TT ‘Te, Case Temperature (°C) Fig 9, Maximum Drain Current Vs. Case Temperature 102 302 ‘SINGLE PULSE (THERMAL RESPONSE) ‘Thermal Responce (Z aic) rts we sot? tony te tyom Fig 10b. Switching Time Waveforms NOTES: 4, OUTY FACTOR, O=ts/e2 2. PEAK Ty=Pow x Zinje + Te 0-4 1 10 yo® 10 4), Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRFD014 [TOR L x0 Vasypscotiin _ Y0s>——A0— wombat 200 Fahour. es Ro I, é Voo Eo 3 sovyL, 4 E 0 tp 0.019 g Bw Fig 12a. Unclamped Inductive Test Circuit 3 100 BY, 7 oss A is Be A Yoo , eee =m ots 78 Starting Ty, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms i AE oH Mel. lo.u.t. 7 Vos Ves Jamal lL, few) ‘Charge —~ Ie Ip cet Sarotng Peso Fig 13a. Basic Gate Charge Wavetorm Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix D: Part Marking Information international 2R|Rectifierinternational @R| Rectifier PD-9.699 IRFD024 HEXFET® Power MOSFET + Repetitive Avalanche Rated 7 + Dynamic dv/dt Rated BV, 60V + For Automatic Insertion ee + End Stackable s Rpsion) 0.102 7 Ip 2.5A s n-channel Description ‘Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. The 4-pin DIP package is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Max. Units Ip @ Te = 25°C | Continuous Drain Current, Vas@10V 25 ly @ Te = 100°C _| Continuous Drain Current, Vas@10V 18 A low Pulsed Drain Current © 20 Pp@ Te = 25°C _| Maximum Power Dissipation 13 w Linear Derating Factor 0.0088 WK, Ne Gate-1o-Source Breakdown Voliage 320 Vv [Ens ‘Single Pulse Avalanche Energy @ a ind levest Peak Diode Recovery dv/at 55 Vins [ts [Operating Junction and “$5 0 +175 lena Storage Temperature Range °c ‘Soldering Temperature, for 10 sec. '300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Max. Units Rasa ‘Junetion-to-Ambiont, Typical Socket Mount 120 KwIRFD024 TOR] Electrical Characteri 'S @ Ty = 25°C (unless otherwise specified) Parameter Min. [ Typ. | Max. | Units Test Conditions [BVoss __| Drain-to-Source Breakdown Vohage V_|Vas=0V, Ip-250uA [ABVoss/aTy | Temp. Costficient of Breakdown Voltage VPC _|Reterence to 25°C, Ip=tmA Posie) | Static Drain-to-Source On Resistance 2 _[Vognt0V, Ip =1. 5A® VVostay | Gato Threshold Voltage V_|Vos=Vos. lp=2501A on Forward Transconductance S_|Vps25V, Ips=1.5A@ oss Zero Gate Voltage Collector Current HA [Vos=60V, Vas0V Vos=48V, Vas0V, Ty=150°C Toss (Gate-1o Source Forward Leakage ma [Was=20V. Gate-1o-Source Reverse Leakage Vos~20V Ig, Total Gate Charge To=14A, Vog=48V, Vaan 10V [Qe Gate-to-Source Charge 10 | eo0 Fig 6 and 130 [Qe Gate-to-Drain (Miller) Charge jon Turn-On Delay Tne Vpo30V, lo=t4A He Rise Time ns |Ro=182, Rox2.00 to Turn-Off Delay Time S00 Fig, 10 w Fall Time te ‘internal Drain Inductance wl oH d ts Tnteral Source Inductance = [eo] — Se terered a ‘a contact. ‘ on input Capacitance = Ves=0V, Vos=25¥ [Coss [Output Capacitance =| oF on Reverse Transfer Capacitance Source-Drain Diode Ratings and Characteristics Parameter Min. [ Typ. [ Max. | Units “Test Conditions is Continuous Source Current - [| 2s NOBEET nial ° (Body Diode) a. | showing tho lo Pulsed Source Current = [= | 20 integral reverse (Body Diode) © rn junction diode. fe Vso Diode Forward Voltage = 15 | V | y=25°C, lge2.5A, Vos-0VO le Reverse Recovery Time ao 200 |ns_|Ty=25°C, le=t4A, on Reverse Recovery Charge 0.22 0.88 [ uC _|di/ct=100AuS® ten Forward Turn-On Time Into non tine i nogigitle (urr-on fs dominated by Lg + Up) ing; Pulse with limited by @Igpst4A, difdtst 1OA/US, VopSBVogs, _ @ Mounting surtace: ‘max. junction temperature (See figure 11) T,s175°C Suggested ig 182 flat, smooth, greased ® Vop=25V, Stating Ty-25°C, Lnt7.5mH, @ Pulse with < 200s; duty Cycle <2% = OKW= "CW Ran250, Peak \4gn2.5A (Soe figure 12)TOR] IRFD024 = E é = © so} E g = = 8 3 : 5 a a | 109} 20us PULSE: WIOTH ous PULSE WIDTH To = 258C Tg = 175°C sot 10° ot wot 108 108 Vos. Drain-to-Source Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, To = 25°C To = 150°C Soy tae Hi | q 3 tr E = 2p +14 & Se = og 5 g8,t14 5 33 3 BE = 23 = 221.4 7 5 3 é © CET Vos = 25¥ z wl zeus PULSE WIOTH| gg = 10v a a ) QBS=AT2O OBO A0GO BO 100 T20 140 160780 Ves, Gate-to-Source Voltage (volts) Ty, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. TemperatureIRFD024 TOR] a 20 Weg OV 7 = TE aT TT Piss = Cgs + Coa Cas SHORTED) i rsa ~ Coa 2 Yos = 4 10 3 = Cas * Ca Zt tt Ue oe c § & 2 Sm] I! st ies 8 if 8 3 Coss 3 sx é | 5 2 é $ 3 ; | . res 3 on Test 1RCuIT sce PIE 13, or 4 tera °% = 1 ee Vos, Drain-to-Source Voltage (volts) Qa, Total Gate Charge (nC) Fig. Typical Capacitance Vs. Drain- Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage 102) RATIO THES ARER CIATT i 5 (ON) Drain Current (Amps) res25ee rc a} rgaa7sec gp, Reverse Drain Current (Amps) Ves = OV o. [sinae puse wl ‘ aa ae Tz Te Zo bat Fp 2 8? 8 soe 2 409 Vso. Source-to-Drain Voltage (volts) Vps. Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 10Ip, Drain Current (amps) IRFD024 Vos er a bur. 25 r Yoo 2.9 Pale With sts Duty Factor $041% ¥ 15) 4 Fig 10a. Switching Time Test Circuit 10 Vos 90% f os | | 0.9 aa t a a Vos Tc, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 103 102 Thermal Responce (Z ac) 10°? 15 104 108108 HHL AEE Ponce) fon) yom Fig 10b. Switching Time Waveforms NOTES TOUTY FACTOR, O9ty/te 2. PEAK TypPan X Zatge t Te 4 10 ioe 203 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case "IRFD024 TSR) L 250 TTT % var tptoobiain — VOS>—J 0p 1.08 eee sorrow 234 hd Toit | Yoo ~ y 2 3 iso G g 3 E too Fig 12a. Unclamped Inductive Test Circuit 2 BY, 2 50 a : a so 78) aes 150 75 Starting Ty, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current Curent Regulator __ ‘Sere Type 1 our | : | it, tov lout. 7 Vos Ves iy Vo Jama TL crane Charge — «6 * Caan Sarping sions Fig 13a, Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix D: Part Marking Information International 2z| Rectifier 12Intemational 2F|Rectifier PD-9.328) IRFD110 HEXFET® Power MOSFET + Repetitive Avalanche Rated D + Dynamic dv/dt Rated BV, 1400V + For Automatic Insertion oss + End Stackable a Rpsion) 0.542 s Ip 1.0A n-channel Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The 4-pin DIP package is a low cost machine insertable case ‘style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Max Tas GO To= 256 | Continuous Drain Curent, Veg@T0V 10 lip @ Tc = 100°C | Continuous Drain Current, Vas@10V. 0.71 A oa Pulsed Drain Curent © 80 P5@ Te= 250 | Maximum Power Dissipation 13 Ww Linear Derating Factor 0.0083 WK® [Was Gatero-Soutce Breskdown Vokage 220 v E; Single Pulse Avalanche Energy @ 140 md as ‘Avalanche Current © 10 A lean Repetitive Avalanche Energy © 2.13 mM wen Peak Diode Recovery dvct © 55 Vins IT, [Operating Junction and 7-85 10 +175 Ir Storage Tomperature Range *c Soldering Temperature, for 10386. 300 (0.089 in. (nm) rom case) Thermal Resistance Parameter Max Unis Roa ‘Junetion-to-Ambient, Typical Socket Mount 120 Kw® 13IRFD110 TOR] Kh Electrical Characteristics @ T, = 25°C (unless otherwise specified) Parameter Min. [Typ. [Max. | Unis TTest Condiions BVoss | Drainto-Source Breakdown Voltage | 100| — | | V_|Vas-0V, Ip-250A [aBVoss/aT, | Temp. Costfcient of Breakdown Voltage 0:12 | = [Wre [Reference to 25°C, Ip-tmA Rosion | Static Drainto-Source On Resistance G|Vag=10V, Ip =0.60A [Vesisy | Gate Threshold Voltage V_[Vos=Ves, lo=250HA Ste Forward Transconductanoe S_[Vps=50V, lpg=0.60A0 loss Zero Gate Voltage Collector Current WA [Vos=100V, Vas=0V Vos=80V, VasOV, Ty= 150°C loss Gate-to-Source Forward Leakage na [Was=20V Gatoto-Source Reverse Leakage Vas=-20V Qo Total Gate Charge lp=5.6A, Vos 80V, Ves=10V [Qos [Gate-to-Source Charge "© | Se0 Fig 6 and 19 [gs [Gate-to-Drain (Miller) Charge ajo Turn-On Delay Time Vo0-50V, lp-5.6A te Rise Time 16 ns |Ree240, Rya8.40. eon ‘Tum-Off Delay Time 15 See Fig. 100 w Fall Time 94 bo Internal Drain Inductance 40 Botwoon lead, ‘6mm (0.25in.) > te Internal Source inductance = [eo] = | |fompackage, i contact. as Cas Input Capacitance == [180 |= Vase 0V, Vps=25v Coxe ‘Output Capacitance at pF | f=1.0Mhz Crs Reverse Transfer Capacitance 15 Soo Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. [ Max. | Units “Test Condiions Is ‘Continuous Source Current ~ | 10 bol P (Body Diode) a trowng tna les Pulsed Source Gurrent = |— [eo intogral reverse {Body Diode) © Pn junction diode. le Vso Diode Forward Voltage = 25 [V_[Ty25°G, ign1.0A, Vag-0VO te Reverse Recovery Time 50 | = | 200 [ns _|Ty-25°C, =5.6A, Orr Reverse Recovery Charge 022 0.88 | uC |didt=100AS ton Forward Turn-On Time nvnsc turn-on time is negigibe (urn-n le dominated by Us + Lo) Notes: © Repetitive rating; Pulse width limited by @ Ip. g 5.6A, dU&75A/Us, VoosBVags, © Mounting surface: max, junction temperature (See figure 11) T,175*C Suggested Rge240 flat, smooth, greased ®Voo=25V, Starting Ty=25°C, Le52mH, © Pulse width < 300us; duty Cycle <2% = © KW = CW Rig=250, Peak Ias=2.0A (See figure 12) 14 :(TeR] IRFD110 ‘o 109 Ip, Drain Current (amps) Ip, Drain Current (amps) 30 WH TH) 2ous PULSE WIOTH| | Tg = 258C wt 1 ro 20us PULSE WIDTH To = 1758C wt @ wo Vps, Drain-to-Source Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristios, Fig 2. Typical Output Characteristics, To = 25°C To = 150°C ips Se 2 z at t i a é e ., | | & Ss E-| 32 3 3 é | = 2, § ge -| 14 = a os im 5 “| if i We pase won) 2 veg = | a > = 7 = 7 0 °.055zap=20 0 20 40 60 80 100 120 140 160 180 Vas, Gate-to-Source Voltage (volts) Ty, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. os On-Resistance Vs. ‘emperature 15IRFD110 09 1 aa a [Heiss = Cos + Coa. Cag SHORTED] fe ess = oe = Veg = 20 | xa] oss = Cas + Cog 3 Vos > 50 K 7 7 gs a = ¢ 2 J Se Be 8 I~ | 8 5 8 t i- fe g 2 & | 1 & a ® & | ry 3 T Cras. = Fon rest crncutT ; Pte r * ain Fo at OFEEEerrie Price areaprrne rarer uarTetaao! Vos, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain- to-Source Voltage vst sot sp, Reverse Drain Current (Amps) Vos = Ov BOT ae os ae Te Vsp, Source-to-Drain Voltage (volts) aT oF Fig7. Typical Source-Drain Diode Forward Voltage 16 Ip, Drain Current (Amps) Qg, Total Gate Charge (nC) Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage OPERATION IN THIS AREA CIMITED 7 BY as (on) ieaB0 1yea758c SINGLE Pus we see art Vos, Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating AreaIRFD110 Ip, Drain Current (amps) 0.0 Pulse Wit < tus Duy Factor sa. + Fig 10a. Switching Time Test Circuit Vos 90% \ ft Vi | oa LA ae Stones Vos ‘aon & taom To, Case Temperature (°C) Fig9. Maximum Drain Current Vs. Case Temperature 103 102 10 Ghul AB Erase) Thermal Responce (Z ac) 10°? we 104 10810 Fig 10b. Switching Time Waveforms Tr BUTY FACTOR, D=ty/tg 2. PEM Ty-Poy X Zena + Te 7 10 102102 1), Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 17IRFD110 TOR] L 0 Vn iptoabiin VOS——-—— f op reawtera Sour. ee woe cortoy at BY dy El Yoo > 20 +—+ 2 T 4 B a | Yoo10 8 | | lea 2 0 | Fig 12a. Unclamped Inductive Test Circuit 2 g ; BVpss g [~ t Bx —} | Noo o bee Starting Ty, Junction Temperature ( (°0) Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms —imettaguae r ‘Sane Type 1 | wour : ! Soka ) haw a ry | I I ut. 7 Vos Vos mal ‘Charge — le bo care sarpig Fst Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix D: Part Marking Information International oR] Rectifier 18International zor) Rectifier PD-9.385G IRFD120 Ea neve HEXFET® Power MOSFET + Repetitive Avatanche Rated focal * Dynamic dv/dt Rated + For Automatic Insertion BVpss 100V + End Stackable Ros(on) 0.272 7 Ip 1.3A oe n-channel Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The 4-pin DIP package is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Max Uris ip @ Te = 25°0 _| Continuous Drain Curent, Vos@10V 13 lp @ Tc = 100°C _| Continuous Drain Current, Ves@10V 0.94 A ot Pulsed Drain Curent © 10 Po@ Te = 25°C _| Maximum Power Dissipation 13 Ww. Linear Deratng Factor ord we Vv, Gate-to-Source Breakdown Volage 220 v eae Singlo Pulse Avalanche Energy @ 100 md a Avalanche Curent © 13 A lem Repotive Avalanche Energy © 018 md avr Peak Diode Recovery duct © 55 Vins ts Operating Junction and i075 Hera Storage Temperature Range ° Soldering Temperature for 10300. 300 (0.069 in. (1.6mm) from e336) stance Parameter Max. Unis Rays Junction-to-Ambient, Typical Socket Mount 120 Kw® 19IRFD120 TOR Se Electrical Characteristics @ Ty = 25°C (unless otherwise specified) | Parameter Min. | Typ. [Max. | Unite Test Conditions BVoss _|Drainto-Souree Breakdown Vottage | 100| — | | V | Vage0V, Ip=250uA, a8 op, Gost of akon Volga Wee [Reserce 366. elm] Rosie | Static Drain-o-Source On Resistance Vosun | Gate Threshold Votage te Forward Transconductance 0.80 loss Zero Gate Voltage Collector Current | — 2 |Vase10V, ip 20.7600 V|Vos-Vas.b=25uA = |S _ |Vps=50V, pan0.78A0, | HA |Vos=100V, VoseOV 7000] __[Vos-80. Vag=0V. 11505 less [Gateto-Source Forward Leakage a [Wass20V [Gate-o-Source Reverse Leakage Ves~20V Io, Total Gate Charge Ip=9.2A, Vog=80V, Vog=10V [Ops (Gate-to-Source Charge lt essa ana ain [Gas Gate-to-Drain (Miler) Charge seq) | Tuen-On Delay Time Voo=50V, Ip=9.24 a Rise Time na |Rect80, Roes.20 lean | Turn-Off Delay Time sssraiog u Fall Time to Internal Drain Inductance Datwoon load, ‘6mm (0.25in.) to) oH trom package, Te Pirtoal Soares ae =peat= from package A contact, i Cas Tapul Gapactance =| 380 = Ves=0V, Vogn25v [Cou | Output Capacitance 150 pF | fet.onhe Ces Reverse Transfer Capaciiance 34 See Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. [ Max. | Units Test Conditions is Continuous Source Current ~[-)13 ere) ° symbol (Body Diode) ‘A | showing the iow Pulsed Source Gurrent =|=—| 0 integral reverse (Body Diode) © Pn junction diode. le Veo Diode Forward Voltage = 25 | V_[Ty=25°G, ignt 3A, Vag-0VO te Reverse Recovery Time 260 [ns _|T)=25°O, Ipn9.2A, On Reverse Recovery Charge o33| = [13 | nC |diistat00Ms@ ten Forward Turn-On Time Intinsc turn-on time & negigle (turn-on fs dominated by Ls + Lo) Notes ‘© Repetitive rating; Pulse width limited by @ lgp59.2A, difdts110A/us, VopsBVpss, © Mounting surface: max, junction temperature (See figure 11) 7,2175%C Suggested Re=182 flat, smooth, greased ® Voo=25V, Starting Ty-25°C, La24mH, © Pulse width < 300ps; duty Cycle <2% OK W= "CW Fig=252, Peak Ing=2.6A (See figure 12) 20TOR) gn Ee s ; & «J ie Zous PUCSE WIDTH| Te = 25°C wot 100 oF Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To = 25°C si & E é g 6 60) Vos = 50V 20us PULSE WIOTH| > | Ves, Gate-to-Source Voltage (volts) Fig3. Typical Transfer Characteristics Jp, Drain Current (amps) IRFD120 20us PULSE WIDTH Te = S750C 10 ro Vps. Drain-to-Source Voltage (volts) wt Fig2. Typical Output Characteristics, To = 150°C 2s TT 8 Boas 3 20 St eS, 5 +} 36 BE 22, 8 & 2 05 e é, veg = 0 D204 BOBO 100 120 140 760 FeO gama =e Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. ‘Temperature 211% Cas SHORTED so | 3 2 Cc 2 3 T s i | 3 % x ie] Sa é 2 i 2 | 8 15 6, mM 3g CT [ | l [ Css. > FOR TEST CIRCUIT fee il = | Ske Fioune 13 4 10° 10! 0 4 e 12 1 20, Vos, Drain-to-Source Voltage (volts) Q,, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain- Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage 104 . =] onevarion tw Wes epee LIeITeD s : BY Figs (an) e i < a = E 10 3 : s 5 6 ou g So: § é é 2° e Yes ~ ov ie SINGLE Pus 05 06 07 O8 OS zee Eeea rie Ree eee eee creme Vso, Source-to-Drain Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward VoltageTOR] IRFD120 Bo fa TTT bu. Yoo 12 E Pale Wt <8 ee Duy Facer s 07% § Fig 10a. Switching Time Test Circuit Sos 4 gs Vos 6 90% fos oa 10% rr Ves Te, Case Temperature (°C) taon) be tao Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 103 10? 3 u 3 10 3g 3 : 2 TANPREAE “REP on eee WPioury racron, o-ty/t aa ean 18 104) 103 10d 1 10 102103 1h, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRFD120 [TER] L 300 vapee YOO e=]e-a eres bed i 7 0.U.T. 2 250 BOTTOM 2.64 Ro le ae vo = € Ban ae voy 4 2 . aoia gs @ Fig 12a. Unclamped Inductive Test Circuit S 100 i Boss 2 50 a a er Starting T,, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms ee t ‘Same Type 1 | sour Vos jamak owt ‘Charge — Ie bo Current Sampling Ressiors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing ‘Appendix D: Part Marking Information International zer|Rectifier 24International zor] Rectifier PD-9.380H IRFD1Z0 HEXFET® Power MOSFET + Repetitive Avalanche Rated D + Dynamic dv/dt Rated BY, 4100V + For Automatic Insertion pss 100 + End Stackable a Rosen) 2.4Q Ip 0.50A n-channel Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The 4-pin DIP package is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surtace for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Max. Units Ip @ Te = 25°C _| Continuous Drain Current, Vas@10V 050 lp @ Tc = 100°C | Continuous Drain Current, Ves@10V 0.36 A Now Pulsed Drain Current © 40 Po@ Tc = 25°C _| Maximum Power Dissipation 1.25 Ww. Linear Derating Factor 0.10 WK Vas. ‘Gate-to-Source Breakdown Volage 220 Vv Ex Single Pulse Avalanche Energy @ 98 md hs ‘Avalanche Current © 0.50 A [Ea Repetitive Avalanche Energy © 0.13 md lever Peak Diode Recovery dvist @ 85 Vins It, [Operating Junction and “S510 +175 \Tstq_ ‘Storage Temperature Range °c ‘Soldering Temperature, for 10 sec. ‘300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Max. Units Ran “Janetion-o-Ambient, Typical Socket Mount 120 Kw 25IRFD1Z0 TOR] Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Pararetar Win. [ Typ. [Max. | Units Test Condiions Boag | Braivt>-Source Breakdown Vakage | 100] — Ves lx280uA ABVoss/aT | Temp, Cooicient of Breakdown Vottago | - [0.12] -- | WhO [Roterence to 25°C, -imA Raosion) | Static Drainto-Source On Resistance 7 @_[Veg=10V, bp =0.30A0 Vesiiy | Gate Threshold Vottage = V_[Vos=Vos, lo=2501A is Forward Transconductance 0.60 | — | —- |S | Vpg-50V. Ipg0.90A0 ings {Zero Gate Votage Colcior Curent 250 | WA |Vos=100V, Vag-0V 1000] _|Vos=80V, Vose0V.T)=180°% GSS | Gato-to-Source Forward Leakage 500 |, [Vas=20V (Gateo-Source Reverse Leakage “B00 | ™* | Veg=-200 a Total Gato Charge 16 aan vaso va [Qe [Gate-to-Souree Charge 068] nC |oc5 Figs and 190 [Qze | Gate-o-Drain Miler) Charge 098 a Turn-On Delay Tino 73 ana eaak a Fise Tine as 4 pea eee icon | Tum olay Tine = pn Bouatise t Fall Time [47 bo Internal Drain Inductance = [40 [ Between lead, ‘6mm (0.25in.) 0} nn cz} |femeosane, contact. 5 ‘s| aa [pet Capactance 3 Vos-0V, Voge250 (Con [Output Capactance 78 pF | set. oMne (Gas [Reverse Tranter Copadtance 28 See Fig. 5 Source-Drain Diode Ratings and Characteristics Paraneier Min. [ Typ. [ Max, Unis [Tost Gondions is Continuous Source Curent = P= | 0s ° (@ody Diode) a [song loa] Pulsed Source Curent = [=a ntogralroverso (Body Diode) © rn junction diode. 4 Veo Diode Forward Volage = TH |W] 1y225°6, ige0.5A, Vag ov ter Reverse Recovery Time. 42 71 ns _|Ty=25°C, Ip=0.9A, Gin | Reverse Recovery Chargo a4} = [oat | nO] t00RS ten Forward Turn Time nia eo ine noghgBle Gur-on domia by Tp FT] © Repetitive rating; Pulse width imited by @igp¢ O.5A, didt<25As, Voo oom [| T 3 25 é 5 3 ze eZ #2,, Hi & CI J COE oo Meo sao 20 0 e040 GO BO 100-120 440 160 80 Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance. Vs. Temperature 27IRFD1Z0 TOR 70) Nog = OF = a Soe * Spe: Cas SHORTED “30 = Cog + Cog 6 0 r Capacitance (pF) | Ves, Gate-to-Source Voltage (volts) Spee oe Lt i bo eS as Vos, Drain-to-Source Voltage (volts) Q,, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain- Fig 6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage 0 Fj openarion In Teis ana Lim 8 Fos (ow) Ip, Drain Current (Amps) Isp, Reverse Drain Current (Amps) Vos = Ov a Ce ore Fe Fe Sore Fae Vso, Source-to-Drain Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 28IRFD1ZO 108 102 ‘SINGLE PULSE Thermal Responce (Z auc) oF ot 10? (THERMAL RESPONSE) 107 [TOR| os os +H é T S ost tt é Fig 10a, Switching Time Test Circuit S 02; zt s T 7 g 4 ome f\ Sot - + y \/ | | x Ltt 10% fy mo 7S tog C7 Tc, Case Temperature (°C) or) ty tom tr Fig 9. Maximum Drain Current Vs. Fig 1b. Switching Time Waveforms Case Temperature berhed! NOTES: 1. DUTY FACTOR, Dsti/e2 2. PEAK Ty=Pou * Zenje + Te 108 om 1 10 107 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 29IRFD1ZO Eas, Single Pulse Energy (mJ) Fig 12b. Unclamped Inductive Waveforms. 10 Charge — Fig 13a. Basic Gate Charge Waveform Starting T,, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current — Quer eguleor ‘Same Type | asDur. Vos jamal TL lb * bb Ccurre Sampling Resistors Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit ‘Appendix B: Package Outline Mechanical Drawing Appendix D: Part Marking Information 30 international eR] RectifierInternational 2R/ Rectifier PD-9.386F IRFD210 HEXFET® Power MOSFET + Repetitive Avalanche Rated D + Dynamic dv/dt Rated BVpss 200V + For Automatic Insertion Dee + End Stackable c Rosin) 1.52 Ip 0.60A 1 n-channel Description . Third Generation HEXFETS from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. The 4-pin DIP package is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual dr pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Max. Units ip @ To = 25% __| Continuous Drain Current, Vag@T0V 0.60) lp @ Te = 100°C _| Continuous Drain Current, Vas@10V 0.38 A ow Pulsed Drain Gurrent © 48 Po@ Te = 250 | Maximum Power Dissipation 40 W Linear Derating Factor 0.0083 Wk® Vi Gate-1o-Source Breakdown Voltage 420 Vv Ens Single Pulse Avalanche Energy @ 79 ad a ‘Avalanche Current © 0.60 A [Eas Repetitive Avalanche Energy © 0.10 md laviet Peak Diode Recovery dvd © 50 Vine ity [Operating Junction and “S50 +150, an Storage Temperature Range *c ‘Soldering Temperature, for 10 se {000.068 in 1.6mm) from case) Thermal Resistance Parameter Max. Onis Raga Junction-to-Ambient, Typical Socket Mount 120 Kw® 31IRFD210 Electrical Characteristics @ Ty = 25°C (unless otherwise specified) rameter Min. [ Typ. [Max. | Units Test Condiions [BVoss | Drainto-Source Breakdown Votage | 200 | | -- | V_|VagrOV, Ipn250uA [ABVpss/AT,| Temp. Coefficient of Breakdown Voltage | -- | 0:30 | — | iG |Reference to 25°C, Ip=tmA Rosie) | Statle Drain-to-Source On Resistance | — | — | 15 | |Vasm10V, Ip =0.98A@ Vesin | Gate Threshold Voltage 20 | = [40 | V_|Vps=Ves. lo=250uA oe Forward Transconductance 010 | = |= |S |Vpge50V, Ingu0.36A0. loss Zero Gate Votage Collector Current | — | — | 250} HA |Vog=200V, Vage0V. = [= [i000 Vos=160V, Vase0V, Ty= 125°C. loss [Gate-1o-Source Forward Leakage = |= [500 [Ves20¥" [Gate-to-Source Reverse Leakage = |= [500 Vas~20V [o, [Total Gate Charge = [= [ee Ib=8.9A, Vog-160V, Vagnt0V [Qe [Gate-to-Source Charge = [48] 2 | coe Fig and 130 [gs [Gate-to-Drain ("Mille") Charge = 145, ton) ‘Turn-On Delay Time a2 Voo=100V, jpx3.3A a Rise Time 7 T=] ag |Rox240, Ronson tao Turn-Off Delay Time 4 Seo Fig. 10 t Fall Time. 39 to Intemal Drain Inductance 40 [Between Toad, {6mm (0.25in,) 0} ts Internal Source Inductance = [eo] = | % |ftom package, contact. Ges input Capacitance = [10 Vas=0V, Vos=25¥ Coxe Output Capacitance =| pF | fa1.0Mhz on Reverse Transfer Capacitance = [5 See Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. [Max. | Units Test Conditions is Continuous Source Current - | — [oso ° eee Meee ism Pulsed Source Current -~T-[4s integral reverse = (Body Diode) © Pn junction diode. le Vso Diode Forward Voltage a= [= [20 Tv [125°C 1gn0.608, Vgsn0VO te Reverse Recovery Time 75 | — [310] ns _|Tyn25°C, l3.3A, Oan Reverse Recovery Charge 033) 14 [HC |dict~100auSO tn Forward Turn-On Time nrinsic tron time i negligible (urn-on is dominated by Us + to) Notes: © Repetitive rating; Pulse width limited by @ Ign 3.2, d/=TOAINs, VoosBVpss, © Mounting surtace: max. junction temperature (See figure 11) ‘Tys150"C Suggested Ra=240. flat, smooth, gr ® Voo=50V, Starting Ty25°C, Lea2mH, © Pulse width < 300s; duty Cycle <2% = OKW = °CIW Rg=250, Poak l_get.2A (See figure 12) 32IRFD210 Ip, Drain Current (amps) Ip, Drain Current (amps) 45 20u5 PULSE WIOTH Te = 25°C 109 wa to-Source Voltage (volts) wt Vos, Drai Fig 1. Typical Output Characteristics, Te = 25°C wt l Vos = 50¥ 20us PULSE_WIOTH’ Aare rrreeereeernreeeeeee ea Vos. Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics 0 Ew =e 8 5 8 s 8 al hun Hse wroTH ee Goose a @ a Vos. Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To = 150°C bata To = 38 : B10 as 3 H 20 Beis 22 aon & Eos i ea ace AER a ee Tee Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. ‘TemperatureIRFD210 TOR Pe T)'es = Ov f= Ine 20 Piss = Cys + Cog. Cas SHORTED] Io = 3.38 ese rg 2 aD Fo + 7. s™ | i & aL 8 8 as ae 5 t i Hye 100] Coss: 2 i | 3 7 PRA 3 ie > T TRCUTT ak I Bo, Vos, Drain-to-Source Voltage (volts) Fig5. Typical Capacitance Vs. Drain- to-Source Voltage 109 é = E 6 g 6 2 8 : é es 2. Tz Te Vso, Source-to-Drain Voltage (volts) Fig7. Typical Source-Drain Diode Forward Voltage Ip, Drain Current (Amps) Q,, Total Gate Charge (nC) Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage ‘OPERATION IN THIS AREA LIMITED BY Fos in) SINGLE PuLse| Po! 8 ae Vos. Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating Area ore Fa 8 P30?To, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 103 102 3 N gro 2 : at € = SINGLE PULSE - (THERMAL. RESPONSE) ot 1 10110? [TOR] IRFD210 Vos Ro --OSEE 4 r z ae os | | Reve = 4 aa ¥ E 03 Fig 10a. Switching Time Test Circuit 3 g \ Bos sooo ” i | co A! 0 ee vos ALT AY eon) Taom tt Fig 10b. Switching Time Waveforms NOTES: 1. DUTY FACTOR, Omts/e2 2. PEAK T)-PoM x Ztnje * Te 108 on 1 10 103 1h, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 35IRFD210 TOR L 200 Yan pte cba Vos >—.—--— roe sk mele ut — ale re (|i) 4) . 7 si peels all: 2 Tov, 4 zB | s aoia 3 + g = Fig 12a, Unclamped Inductive Test Circuit Vr 7 ‘0 | rT] BYpss 3 1 | ; bore rr a re) Starting Ty, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Vos Charge — bY Carer Sarping Reiss Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery duit Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix D: Part Marking Information International 2R| Rectifierinternational 2R]Rectifier PD-9.417E IRFD220 HEXFET® Power MOSFET + Repetitive Avalanche Rated 5 + Dynamic dv/dt Rated BVps¢ 200V + For Automatic Insertion oss + End Stackable ie Rpsion) 0.802 7 Ip 0.80A artis n-channel Description = Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. The 4-pin DIP package is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Max, Units lp @ Te = 25°C _| Continuous Drain Current, Vog@10V. 0.80 ip @ Te = 100°C | Continuous Drain Current, Vog@10V 0.50 A Tom Pulsed Drain Gurrent © 64 Po@ Te = 25°C _| Maximum Power Dissipation 10 Ww Linear Derating Factor 0.0085 wKe Wes Gate-to-Source Breakdown Votage 220 v Eas ‘Single Pulse Avalanche Energy @ 59 md ag ‘Avalanche Current © 52 A Ean. Repetitive Avalanche Energy © 0.10 md [viet Peak Diode Recovery dvi © 50 Vine Ty ‘Operating Junction and +55 to +150 ITs1¢ ‘Storage Temperature Range °c Soldering Temperature, for 10 see, 300 (0.069 in, (1.8mm) from case) Thermal Resistance Parameter Max Unite Raa “Jonction-to-Ambient, Typical Socket Mount 120 Kw 37IRFD220 TOR] Electrical Characteristics @ T, = 25°C (unless otherwise spe Parameter Mio. [ Typ. [Max.| Units [BVoss | Drain-io-Source Breakdown Vottage | 200 | | — | V_|Vase0V, Ip=250uA. [ABVoss/AT, | Temp. Coefficient of Breakdown Voltage VrC_[Reterence to 25°C, p= 1mA Rosen | Static Drain-o-Source On Resistance 0 [Vese10V, Ip =0.48A9 Vesen) | Gate Threshold Votage V_[Vos=Vas lox250uA a Forward Transconductanoe S_|Vps=50V, Ipgn0.48A@ loss | Zove Gate Votage Collecor Current WA |Vs=200V, Vas-OV Vos 160V, VegeOV 1351256 Tess | Gateto-Souroe Forward Leakage 7a [Wes=20V [Gate-o-Source Reverso Leakage Vas~20¥ o Total Gate Charge lo=52A, Vose160V, [Ope (Gato-1o-Souree Charge nC |Vaget0V0 Oxe [Gate-1o-Drain (Miler) Charge ac Tun-On Delay Tie Voo=100V, bp SZA a Fico Tine ns |Ro=182, Ro=190 aon Turn-Off Delay Timo © Fal Time tp Internal Drain Inductance Botwoon ead, ; mm (0.25in,) 9} a haenaleores baie =paop =] ™ frompacaan lia | contact. i input Capactance Vos=0V, Vos=25¥ (Output Capactance Oh Crs Reverse Transfer Capaciance 30 Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. | Max. | Units: Test Conditions is Continuous Source Current = | — oso MOSFET eymbot > (Body Diode) a. | showing the ew Pulsed Source Current = |= |e intogralroverso ol (ody Diode) © -n junction diode. le Veo. Diode Forward Voltage 7 18 [_V_[Tye25°G, Ign0.80A, Vag-0V® te Reverse Recovery Time 75 300 | ns |Tj=25°C, Ie=5.2A, on Reverse Recovery Charge 046] — | 1.8 [| nC |dictat00anso tn Forward Turn-On Time intinsic tron tine a noghgBle (ron le dominated by Us + Uo) Notes: © Repetitive rating; Pulse width limited by @ Iso52A, diGt<95Alis, VopsBVpss, © Mounting surface: max. junction temperature T)S180°C Suggested Fig 182. flat, smooth, greased ® Voo=50V, Starting Ty=25°C, L=36mH, © Pulse width < 300us; duty Cycle <2% @OKW=*CW Rig=250,, Peak Iaget.6Ainternational 2R|Rectifier PD-9.696 IRFD9014 HEXFET® Power MOSFET + Repetitive Avalanche Rated D r + Dynamic dv/dt Rated BV, + For Automatic Insertion oss “60V + End Stackable a Rosion) 0.502 + P-Channel 2 'b 414A channel Description oan ‘Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. The 4-pin DIP package is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Max. Unis ip @ Te = 25°C | Continuous Drain Current, Vas@-10V “it ip @ Te = 100°C | Continuous Drain Currert, Vag@-10V 08 A ow Pulsed Drain Curent © 28 Po@ Te = 25°C | Maximum Power Dissipation 13) Ww Linear Derating Factor 0.0083 WK® Was Gato-to-Souree Breakdown Volage 120 Vv [Eas ‘Single Pulse Avalanche Energy © 140) md la ‘Avalanche Current © Aa A [Ewe Repetitive Avalanche Enorgy © 0.43 md ldvict Peak Diode Recovery dv/dt @ 45 Vins Ty ‘Operating Junction and 55 to +175 HTsta Storage Temperature Range “c ‘Soldering Temperature, for 10 sec. 300 (0,063 in, (1.6mm) from case) Thermal Resistance [ Parameter = Max Unite Raw “Janetion-o-Ambient, Typical Socket Mount 120 wd 39RFD9014 [TOR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min [ Typ. [Max. | Unis Test Condiions Voss | Drain-to-Source Breakdown Vollage | -60 | — V_|Wes=0¥, p= 250uA [aBVoss/aTy | Temp. Coefficient of Breakdown Voltage | —- [0.060| -- | VIG [Reference to 25°C, Ip=imA osion) | Static Drain-o-Souree On Resistance = [050 [8 |Vos=-10V, p=-0.6609) Vasqn | Gate Threshold Voltage 20 V_|Vos=Vos. lox 250A a Forward Transcondvetance 070 S_[Vog™25V, Ing=-0.66A ss Zero Gate Voltage Collecior Current HA |Vos=-60V. Ves-0V = Vos=-48V, Vag=0V, Ty=150°C lass Gateto-Souree Forward Leakage va [ase-20¥ Gate-to-Source Reverse Leakage Vgs=20V_ a Total Gate Charge Sa TASCA [Qy, | Gate-to-Souree Charge nC | Yage-t0ve on [Gate-o-Drain (Miler) Chaige eon Turn-On Delay Time Voo-20V, lo=-6.7A, a pein ns |Ro=24, Ro=4.00@ tein Turn-Off Delay Time ¥ Fall Time 7 to Internal Drain Inductance Between lead, i ts Internal Source Inductance 60 ape center ot ale ‘sl contact. i on input Capacitance 270 Ves=0V, Vos= 250 Cone Output Capacitance 170 pF | fat.oMhz Cine Reverso Transfer Capacitance a Source-Drain Diode Ratings and Characteristics Parameter Min. [ Typ. | Max. | Units Test Condiions Is Continuous Source Current = pt an ° (Body Diode) i. sowing ine sea isa Pulsed Source Gurrent ~ |= [88 integral reverse (Body Diode) © p-n junction diode. le Veo Diode Forward Volage “SB [ V_[T25°O, Iga-t.4A, VagsOV@ Mee Reverse Recovery Time 40 160 | ns_|Tj=25°C, Ip=-6.7A, |Qar Reverse Recovery Charge 0.048 0.19 | HC |di/dt=-100AuS® en Forward Turn-On Time ninsi um-on ime is nagige (ur-en fs dominated by Us Lo) Notes: ‘© Repetitive rating; Pulse width fmited by @ iggs-6,7A, dildts-B0A/Us, VopSBVoss, © Mounting surtace: max. junction temperature, T)S175°C Suggested Rgx240 flat, smooth, greased @Vpo=-25V, Starting Tye25°C, LaStmH, _ @ Pulse width < 300us; duty Cycle <2% © Kav = *CW Fge250, Peak lage-2.08 For more information on the same die in a TO-252AA package refer to IRFR901: 40International 2R|Rectifier PD-9.698 IRFD9024 HEXFET® Power MOSFET + Repetitive Avalanche Rated 7 + Dynamic dv/dt Rated -60V + For Automatic Insertion BVpss + End Stackable : Rosion) 0.280 + P-Channel 7 lb -1.6A ae -channel Description p Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. The 4-pin DIP package is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Wa Ua [p@ Te = 25°C _| Coninvous Drain Curent, Ves@-10V “16 lp @ Te = 100°C _| Continuous Drain Current, Ves@-10V_ a A oa Pulsed Drain Curent © 3 Po@ Te = 25°0 | Maximum Power Dissipation 13 Ww Linear Derating Factor 0.0083 WK® vi Gatoto-Souree Breakdown Vokage 220 v E Single Pulse Avalanche Energy @ 140 ml ta Avalanche Current As A Esa Ropetive Avalanche Enorgy © oa mu wet Peak Diode Recovery vat © 45 Vins ry, Operating Junction and Bio 175 ex Storage Temperature Rango © Soldering Temperature, or 10 90, 300 (0.063 in (rm) from e388) Thermal Resistance Parameiar Wax Unie Rasa Junction-to-Ambient, Typical Socket Mount 120 Kw® aIRFD9024 TOR EEE! Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Typ. [Max. | Unis Test Conditions BVoss __| Drainto-Source Breakdown Voltage ‘VaseOV, Ip=-250KA, [ABVoss/aTy | Temp. Costfcient of Breakdown Voltage (0.058 terence to 25°C, Ip=-1mA Rosi ‘Static Drain-to-Source On Resistance | — Vas=10V, Ip =-0.96A@ Vast) | Gate Threshold Volage 20 | = Vos=Ves. lo=-250HA lon. Forward Transconductanoe 13 [= Vog25V, Inge-0.9640, loss Zero Gate Voltage Collector Current | — | — Vos=-60V, Vog=0V == Vos=-48V, Vas=0V, Ty= 150°C. loss [Gate-1o-Source Forward Leakage =l[= Vos=20V Gate-to-Source Reverse Leakage == Ves=20V [Qa Total Gate Charge. a lps-11A, Vos=-48V, Vase-10V [Oe (Gate-to-Source Charge = [= Soo Fig 6 and 130 (Qs (Gate-o-Drain (Miler) Charge == T" tony [Turn-On Delay Time = [as [= Vooe-30V, Ipe-t1A a Rise Time Gy ne |Poe180, Rqn2.50 tam [Turn-Off Delay Time 15, See Fig. 10 % Fall Time 2 [= to ‘Internal Drain Inductance 40 | ~ Batween lead, ‘6mm (0.25in.) 2) ts intemal Soures Inductance = Peep] ee eerie NC, | contact. 4 on Input Capacitance 570 Vose0V, Vos=25¥ Coss [Output Capactance 360 pF | fx1.0Mhz Cre Reverse Transter Capaciance = [es [= See Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. | Max. | Units “Test Conditions is Continuous Source Current = 16 ° oe , eee ism Pulsed Source Current - 13 integral reverse (Body Diode) © Pn junction diode, f Veo Diode Forward Voltage = [83 | V [225°C Iga .6A, Vege OVO te reverse Recovery Time 50 200 | _ns_|Ty=25°C, Ip=-11A, Ona Reverse Recovery Charge 0:6 0.64 [ UC |dilate100AuS® fon Forward Turn-On Time inrinsie tron time is negiibe (turn-on dominated by Us + Lo) © Repetitive rating: Pulse width imted by @ pS-11A, didts-140Ahis, VoosBVoss, © Mounting surace: max. junction temperature (See igure 11) Tys175%C Suggested gs 18 flat, smooth, greased ®Voow-25V, Staring Tya25°C, Lat7mH, _@ Pulse width < 300us; duty Cycle <2% = ©KW~= "CW Rge250, Peak Ing 32A Se 42IRFD9024 g & = & 3 £ 6 20us PULSE WIDTH| 2500 10 oF -Vps, Drain-to-Source Voltage (volts) Te = aw Fig 1. Typical Output Characteristics, To = 25°C & § 109 § 6 Vos = -25V { 204s PULSE WIOTH| | -Vos, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics -lp, Drain Current (amps) % wt (Normalized) Rosier), Drain-to-Source On Resistance PULSE WIOTH 17500 100 -Vps, Drain-to-Source Voltage (volts) a Fig 2. Typical Output Characteristics, To = 150°C ol 8-4-2002 45 GO BO TOO TOO TAO TOO 180 Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. TemperatureIRFD9024 [TOR] F 20-5 Coo | ips ce TLL Ciss = Cys + Sg, Cds SHORTED] Crss = Coa 1000 Coss = Cas * Cao I {| | t LU I 6 #2 ‘a 058 Capacitance (pF) z it -Vgs, Gate-to-Source Voltage (volts) FOR TEST CIRCUIT orgs: T — {GURE_1; 2 CUTE" te ‘io -Vps, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain- Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage 10? 2 5 ws met i B to = 3 en ; g i 3: 3 f: : a 5 E Te=25°C 8 : ores -Vgp, Source-to-Drain Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 44IRFD9024 Bo 20 rr aa = Yoo ue F g ie & Dany acon 209% Z 12 + 5 Fig 10a. Switching Time Test Circuit 6 | fete ton) te tyon 4 s Vos er 1 10% Sod ryt 1At 7\I | GSS soe es Sse C To, Case Temperature (°C) Fig 9, Maximum Drain Current Vs. Case Temperature 103 402 10 ‘Thermal Responce (Z asc) 10°? 15 04 108 0 Fig 100. Switching Time Waveforms cali co! NOTES: Tr BUTY FACTOR, O=ty/te 21 PEAK Ty-Pow X Zane * To 7 10 soe 403 1), Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 45IRFD9024 [TOR 400 =] rae {| Za I 200] ZA Eqs, Single Pulse Energy (mJ) io = -25¥ ° 2 = mwa Ass Starting Ty, Junction Temperature (°C) Voo BVoss. Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms ee ei Sane ye | sour | ‘Charge — Ig Ib ‘Cure Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing ‘Appendix D: Part Marking Information International zer|Rectifier 46Intemational 2R|Rectifier PD-9.389G IRFD9110 HEXFET® Power MOSFET + Repetitive Avalanche Rated + Dynamic dv/dt Rated + For Automatic Insertion + End Stackable + P-Channel Description Third Generation HEXFETs from Intemational Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, BVpss -100V Rosion) 1.22 Ip -0.70\ p-channel and low on resistance. ‘The 4-pin DIP package is a low cost machine insertable case style which can be stacked in muttiple combinations on standard 0.1 inch pin centers. The ‘dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt Absolute Maximum Ratings Similar to MO-001AN Parameter Max. Units in @ Te = 25°C _ | Continuous Drain Current, Ves@-10V 0.70 ly @ Te = 100°C | Continuous Drain Current, Ves@-10V 70.49 A Tow Pulsed Drain Current © “56 Po@ Te = 25°C _| Maximum Power Dissipation 13 Ww Linear Derating Factor 0.0083 WK® Ve Gate-to-Source Breakdown Voltage 420 v Eas ‘Single Pulse Avalanche Energy @ 140, md Nast Avalanche Current © 0.70 A [Ena Repetitive Avalanche Energy © 013 md ldvict Peak Diode Recovery dvict @ 55, Vins Ty ‘Operating Junction and -5510 +175 [Tsro [Storage Temperature Range °C ‘Soldering Temperature, for 10 sec. ‘300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Max. Units Ray ‘Junction-to-Ambient, Typical Socket Mount 120 KWw® 47IRFD9110 TOR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Paraneter Wie. [ Typ. [Max. | Unis Test Condlions Voz | Braivto Source Breakdown Vokage | -100 V_|es=0 fox 250uA [SBVpsg/AT, | Temp. Coefficient of Breakdown Voltage | WFC [Reference to 25°C, Ip=-1mA. Fioseny [Ste Drainto Source On Resistance | ~ [Vas 10V. lp 0.4200 Vesin Gate Threshold Voltage “2.0 V_[Vos=Ves, ln=-2504A. Os Forward Transconductance 0.60 S_|Vps=-50V, Ipg=-0.42AD_ loss Zero Gate Voltage Collector Current. = HA | Vos=-100V, Ves=0V_ = Vos= 80V, Vogs0V. T1500 loss Gate-to-Source Forward Leakage na [Vos -20V Gatto Source Roverse Leakage Wes=20 [oa otal Gate Charge Ip=-4.0A, Vog=-80V, Vose-10¥ a Gate-o-Souree Charge nea leer ees sag) [On| Gato-o-Drain Cllr) Charge faery | Turm-On Delay Tine aanrnre te Fice Tine ie laeeoaalieania Taam | Turi Datay Tne pours t Fal Time Tnernal Dale dtanoo Boiwaon fad, 6mm (0.25in.) to} an {trom package, ts internal Source inductance =peot= trom package, 7 contact I Gaz [Taput Capacance 300 Ves-0V, Voow 25 (Gens | Output Capactance 4 pe | fetiowhe (Gas [Reverso Tranter Capactance a eect S00 Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions a Tentnuous Source Gurent = 070] Iwosrer ° 0 symbol (Cody Diode) 1a. | spowig ths Ton Pulsed Source Curent = |= | s8 gral reverse (Cody Diode) © pa luncion dodo, os ao Diode Forward Vohage [=| SS |_| y28°6, ge 070A Vgn VO rs Reverse Recovery Tine a 160-| ns] Tye25°0, Io OA, aa Reverse Recovery Charge [0.075 0:30 | HC |dildt=100Aus® ten Forward Turn Tine ness one rege (ron dominated by Up + Note © Repetitive rating; Pulse width limitod by @ jggc-4.0A, dUGS-75AIS, VooSBVoss, © Mounting surface: mma nein femperatre (See feure 11) eo t7seg Sueestea Reezua flat smooth, greased ® Voo=-25V, Starting Ty=25°C, L=53mH, © Pulse width < 300s; duty Cycle <2% © Kw = "Cw Fig=252, Peak Inge-2.0A (See figure 12)IRFD9110 Ip, Drain Current (amps) -lp, Drain Current (amps) "45H 20us PULSE WIOTH| Te = 25°C ry -Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To = 25°C 18 so % Vps = -50V 20us PULSE WIDTH St -Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Ip, Drain Current (amps) (Normalized) Ros(on), Drain-to-Source On Resistance so “4.50 2008 PULSE WIDTH Tg = 1750 Fc a Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To = 150°C 2.0 Tp = aoe as os ss SO BO TOO TED 300 10 TBO © S60=«d=2o 0 20a Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 49IRFD9110 [TOR 3 Nog = OW = 20 iss 7 Cos * Soe Cos SHORTED] a [ooss = 8 a ° g NA £ s o So SSH 4 5 5 B 8 a i g & + $ vo LI 6 | it s Fon Test CIRCUIT { LT 7 SEE FIGURE 13 oe a D -Vps, Drain-to-Source Voltage (volts) Q,, Total Gate Charge (nC) Fig. Typical Capacitance Vs. Drain- Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage 18 wo «Ey overarion au tris anes LDWITED z 8Y Fos om é aa < Zw z eae £ = 3 z: 2 Be gw 8 3 s 5 Sa 3 Bou g i frenesec ~ a Tyet7S°C es = ov a sineue Pu.se wi 2 + = a Dp ae -Vsp, Source-to-Drain Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig7. Typical Source-Drain Diode Fig8. Maximum Safe Operating Area Forward Voltage[TOR IRFD9110 Vos we 08 1 Vos 7hour, Be -10V Pace Wid ye & DayFacor 305% 5 ¥ Be Fig 10a. Switching Time Test Circuit g aon) t yon _t £ Ves ae 10% 0.0, a Cr Vos. Te, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 103 u 8B 10 3 : E Stine Puce | 2 THERA RESPONSE LT of tte re 1 ot 108 ®t 7 0 = 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal impedance, Junction-to-Case 51IRFD9110 [TOR] ae orton =2 08 é 20 : & 2% - - a 1 2 [fy 2 00 t a (ee ee ga > ee eT ae Starting Ty, Junction Temperature (°C) BVose Fig 12c, Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped inductive Waveforms ia ! ! | | put. 7,Vos e Charge — bb caret Sarping Rais Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit ‘Appendix B: Package Outline Mechanical Drawing ‘Appendix D: Part Marking Information international 2®/Rectifier 52International zeR|Rectifier PD-9.331H IRFD9120 HEXFET® Power MOSFET + Repetitive Avalanche Rated o * Dynamic dv/dt Rated BVpeg -100V + For Automatic Insertion bees . et le e Rosen) 0.602 « P-Channel Ip -1.0A -channel Description P ‘Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The 4-pin DIP package is a low cost machine insertable: case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Max This ip @ Tc = 25°C _| Continuous Drain Current, Veg@-10V 1.0 ip @ Te = 100-0 | Continuous Drain Curent, Vas@-10¥ 270 A om Pulsed Drain Current © 8.0 Pp@ Te = 25° | Maximum Power Dissipation 125 Ww Linear Deraing Factor 3.0089 WKS) Na Gate-10-Source Breakdown Votage 220 v [Ess Singl Pulse Avalanche Energy @ 140 mi tae Avalanche Current © 30 A Eas Repetve Avalanche Energy © 0.13 mi Jove Peak Diode Recovery did @ 55 Vins Ty Operating Junction and 5510 +175 Tir Storage Tomperature Range < Soldering Temperature, for 10380, 300 (0.069 in (6mm) from case) Thermal Resistance Parameter Max. This Rosa, ‘Junction-to-Ambient, Typical Socket Mount 120 KWO 53IRFD9120 [TOR] Electrical Characteristics @ T, = 25°C (unless otherwise specified) Parameter Min. [Typ Units “Test Conditions BVoss | Drain-1o-Source Breakdown Voltage = V_[Ves=0V, p= 250uA [ABVpss/a7, | Temp. Cootficient of Breakdown Vollage 0.10 WG |Reterence to 25°C, Ip=-imA Rosion) _| Static Drain-to-Source On Resistance 2 [Vas=t0V, lp = 0.6089 Vests) | Gate Threshold Votage V_[Vos=Ves, lo=-250KA Os Forward Transconductance 'S_|Vps=-50V, Ipg=-0.60A0 loss Zoro Gate Voltage Collector Current HA |Vos=-100V, Ves=0V Vos=-80V, Vas=0V, Tua 150°C. oss Gate-10-Source Forward Leakage na Was=20V Gate to-Source Reverse Leakage Vos=20V [Qo Total Gate Charge Ip=-6.8A, Vpg=-80V, Veg=-10V_ Jas Gate-to-Source Charge PO | Seo Fig 6 and 130 on [Gate-to-Drain (‘Miler Charge ony Turn-On Delay Time 86 Voow-50V, lon-6.8A a Rise Time 29 ns |Ro=182, Ry=7.10 tao TurOft Delay Time 2 See Fig. 10 fh Fall Time. = [es t= tb Internal Drain Inductance = pao] — Between lead, Jémm (0.25in.) to] ts Internal Source Inductance = Peo [=] [tom package, ‘sl contact. i Cis input Capacitance 390 | — Vas=0V, Vos=-25¥ Coxe Output Capacitance 170 pF | fet.omnz Cras Reverse Transfer Capacitance 45 S00 Fig. 5 J Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. [ Max. | Units Test Condit ls Continuous Source Current ~~ | 10 MOSFET Aba > ay Bec) eset lew Pulsed Source Gurrent = [= | 80 integral reverse (Body Diode) © Pn junction diode. ls Veo Diode Forward Voltage == [63 | V[7-25°6, get. 08, Vag 0VO. [te Reverse Recovery Time 8 200 | ns _|Ty-25°C, le=-6.8A, On Reverse Recovery Charge 0.47) 0.66 | HC |dildt=100AS® ton Forward Turn-On Time Intrinsic turn-on time is negligible (wen-on is dominated by Ls + Lp) Notes: © Ropsttve rating; Pulse wicth Imited by @ jgnc-6.8A, d/dts-110AVUS, VoosBVpss, © Mounting surtace: ‘max. junction temperature (See figure 11) 742175 Suggested Rew 181) flat, smooth, greased ® Voo=-25V, Starting Ty=25% Fig=250, Peak lage +, L=55mH, @ Pulse width < 300us; duty Cycle <2% @KW= °C/W (OA (See figure 12) 54Ap, Drain Current (amps) -Ip, Drain Current (amps) 0 20us PULSE WIDTH| To = 259C 08 a -Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To = 25°C Vos = -50V 20us PULSE WIOTH aS Hea Sees Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics go 5 é 6 = Fl sous PULSE WIDTH Eth Te = 17580 Fo ot Vos, Drain-to-Source Votage (vols) Fig 2. Typical Output Characteristics, Te = 150°C 3.0 ee [ee é 24 Se | 88.5 ge | € 3s S21. g 6 = 05 é % © Sgazadm20 020 ad BOBO 100 320 140 160 Te Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. ‘Temperature 55 0IRFD9120 TOR] Teg 2 OV aE Ds ee] aaa ananl ees) cies = Cys + Coq, Cas SHORTED, =|? 7 Crs * Cod 3 rs oe) 2 & S i 3 so 8 i 3 # £ é™ T & | 6 1s L 3 1 | | eee s Fon Test cracutT SEE FIGURE 13, fT aE Sa Vps, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig5. Typical Capacitance Vs. Drain- Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage (OPERATION IN THIS AREA LIMITED BY Fos (on) t wo! i 8 g € 3 6 & $ 3 { : Veg = OV sIusue Puse| wis 20 3.0 7 30 oF Fa FS 49 FF are F408 -Vsp, Source-to-Drain Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 56[TOR IRFD9120 Vos. Bo oy T | L | ta) 08 +} 1 ce Bo 4 | at = Duty Factor 0.1% 5 O68 ¥ 5 i + CTT Fig 10a. Switching Time Test Circuit 8 | [ go ry T aor te tyom tt s tt | Ves 6 {| { 10% | | Sool } } ryt T rsa 1 i pg lauiaa at ait 30% TT ag 7 To, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. ‘Thermal Responce (Z ac) Case Temperature 103 10 EaBEoonse 04 se 10 193 108 Fig 10b. Switching Time Waveforms 1 OUTY FACTOR, O=ty/te 4 yo 10 108 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 57350 | “TOP eee T ‘orton é E a0 2 B aw g 2 0 L S 3 t F 100 a | Bo e==rrrt a rr Starting Ty, Junction Temperature (°C) BVoss. Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Se [Sane pe i 1 i | ! hav. | L I lout. 7 Vos Vos )-amal ll e age — bb * ee Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix D: Part Marking Information International 2R| Rectifier 58Target Data Sheet PD-9.387G International (rer|Rectifier IRFD9210 HEXFET® Power MOSFET + Repetitive Avalanche Rated 7 + Dynamic dv/dt Rated BVpcs -200V + For Automatic Insertion bss + End Stackable i. Rpsion) 3.02 + P-Channel 'b -0.44 a -channel Description p Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. The 4-pin DIP package is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parar ir Max. Units Ip @ To = 25°C _| Continuous Drain Curent, Vax@-10V “0.40 is@ Te = 100°C | Continuous Oran Curent, Vog@-10V. 225 A ior Pulsed Drain Curent © 22 Po@ Tes 25O | Maximum Power Dissipation 10 w Tinear Deratng Factor 0088 WK Ves _ Gate-to-Source Breakdown Voltage #20 Vv Eas Single Pulse Avalanche Energy @ 59 md ta ‘Avalanche Curent © “2.40 A leas Repeiive Avalanche Energy © 0.10 nd lve Peak Diode Recovery duet 50 Vins Tt Operating Juneton and “Bo +180 [Tara Storage Temperature Range “ Soldering Temperature, tor 10806, 300 (0.063 n (1.6m) rom ease) Thermal Resistance Paraneior Wax Unie Ra |[Sunotion-to-Ambient, Typieal Socket Mount 120 kKw® 59IRFD9210 Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. [Typ. [Max. | Units ‘Test Conditions [BVoss | Drain-1o-Source Breakdown Voliage V_|Vas0V, Ip=-250uA |aBVoss/AT, | Temp. Coetficient of Breakdown Voltage VPC _|Reterence to 25°C, Ip=-tmA Static Drain-o-Souroe On Resistance _|Vege-10V, lp «0.2409 [Gate Threshold Voltage V_ [Vos=Vos, low-250uA Forward Transconductance 'S_[Vose-50V, Ing=-0.2440) Zero Gate Voltage Collecior Current HA |Vose-200V, Vese0V Vos=-160V, Ves+0V,Ty=125°C Gate-o-Source Forward Leakage na [Was=-20V. Gate-to-Source Reverse Leakage Vos=20V loe-2.4A, Vog=-160V, [Gate-0-Source Charge [Gaterto-Drain (Miller) Charge FTurn-On Delay Time AC | Vage-10V0" Rosen, Ves Ste loss loss [a Total Gate Charge [Qe [Qs nn Vpp=-100V, Ip=-2.4A a Riso Time 7 as tom ‘Tum-Off Delay Time eee w Fall Time 3 to Internal Drain Inductance 40 Between lead, ‘6mm (0.25in.) to] is Internal Source Inductance ee /oeor (gece ee | om eanoe contact. Cas input Capacitance 160 Vos=0V, Vos=25¥ on (Output Capacitance 50 pF | fa1.0Mhz Cans [Reverse Transfer Capacitance = ey = Source-Drain Diode Ratings and Characteristics Parameter Win. [ Typ. | Max. | Units “Test Conditions: is Continuous Source Gurrent ~ 04 OST aate ° (ob Neeeztere we Pulsed Source Current ~ "32 integral reverse (Body Diode) © Pn junction diode. ls [Vso Diode Forward Voltage a= |= [58 [V1 128°, ige-04A, Veg 0VO te Reverse Recovery Time wa ila |_ns_|Tyn25°C, Ie=-2.4A, Opn Reverse Recovery Charge ala wa [uC |dildte-100ApS® lon Forward Turn-On Time nose turn-on tie s negligible (turn-on is dominated by Ls + Lo) © Repetitive rating; Pulse wicth imited by @ Igos-2.4A, didts-S0AMus, VopsBVoss, © Mounting surtace: ‘max. junction temperature Tys150°C Suggested Rq=240 flat, smooth, greased ®Vop~-50V, Starting Tj=25°C, Lat40mH, — @ Pulse width < 300us; duty Cycle <2% = O@Kw= "CW Rig=250, Peak Ins-0.8A, ‘Target Data Sheet: Specification Pending; Contact Factory for Update 60Target Data Sheet PD-9.439B International 2F|Rectifier IRFD9220 HEXFET® Power MOSFET + Repetitive Avalanche Rated D + Dynamic dv/dt Rated + For Automatic Insertion + End Stackable + P-Channel ° Ss p-channel Description BVpss -200V Rpscon) 1.52 'b -o.58a} ‘Third Generation HEXFETs from Intemational Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. The 4-pin DIP package is a low cost machine insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain pin serves as a thermal link to the mounting surface for power HD-1 dissipation levels up to 1 watt. Absolute Maximum Ratings Parameter Max. Units )@ To = 25S _| Continuous Drain Current, Vas@-10V -0.58 lp @ Te = 100°C | Continuous Drain Current, Veg@-10V_ 0.36 A tom. Pulsed Drain Current © 46 Po@ Te = 25°C _| Maximum Power Dissipation 40 Ww near Derating Facior 7.0085) 7} (os. Gate-to-Source Breakdown Voltage £20 Vv. Ens Single Pulse Avalanche Energy 2 39 md tan ‘Avalanche Current © 0.58 A Ean Repetve Avalanche Energy © 0.10 md avret Peak Diode Recovery dvidt © 50 Vis rt (Operating Junction and “B50 +150 lTsto Storage Temperature Range ne Soklering Temperature, fr 10 sec. 300 (0,063 in. (1.6mm) from ease) Thermal Resistance Parameter Max. Unite [Rasa ‘Junction-to-Ambient, Typical Socket Mount 120 KW® 61IRFD9220 — EE Electrical Characteristics @ T, = 25°C (unless otherwise specified) TOR] Parameter Min. [Typ. [Max. | Unis Test Gondiions |BVoss Drain-to-Source Breakdown Voltage -200 - | V_|Vas=0V, Ip=-250pA {ABVoss/AT, | Temp. Coefficient of Breakdown Voltage Reference 10 25°C, Ip=-ImA Rosien) __ | Static Drain-to-Souree On Resistance Vas=-10V, Ip =-0.35A@ asim | Gate Threshold Voltage Vos=Ves. for 2501A Ste Forward Transconductance loss [Zero Gate Votage Collector Current |60V, Vgs=0V, T)=125°C_ Iess Gate-to-Source Forward Leakage 20 Gate-to-Source Reverse Leakage Vase20V Total Gate Charge Ip=-4.0A, Vpg=-160V, Gateto-Source Charge Ves=-10V0 [Gate-to-Drain (Mille") Charge = Turn-On Delay Time = [20 Voo="100V, Ip-4.0A Rise Time 30 Rget80, Ros250 Turn-Off Delay Time 25 Fall Time 20 Internal Drain Inductance 40 Boiween lead, ‘6mm (0.25in.) ‘o} Ts Internal Soures Inductance =e] ™ Generate NEY, contact. i Ces Input Capacitance = [sao [= Vas=0V, Vog=-25¥ Coss. Output Capacitance 105 pF | f=1.0Mhz Cras Flverse Transter Capackance 25 Source-Drain Diode Ratings and Characteristics I Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ = | -0.58 MOSFET symbol eo (Body Diode) a. [showing a ew Pulsed Source Current = |= [46 integral reverse | & (Body Diode) @ P-n junction diode. Is. Veo Diode Forward Vollage = 63 | V_|7)-25°0, Ig=-0.6A, Vage0V® te Roverse Recovery Time ia tla | _ns_|T)=25°C, le=-4.0A, Qa Reverse Recovery Charge nia [ - [nia | KC [didte-100AuS® en Forward Turn-On Time intisie tron tine & negligible (ur-on dominated by Us + Up) Notes: Repetitive rating; Pulse width limited by @ Igps-4,0A, dildts-9OAMs, VoosBVos5, @ Mounting surtace: ‘max. junction temperature Tys150°C Suggested Rg=24Q flat, smooth, greased ® Voo=-50V, Starting Ty=25°C, La4imH, @ Pulse width < 300s; duly Cycle <2% © KW = “CW. Rig=250,, Peak Inge=-1.2A, Target Data Sheet: Specification Pending; Contact Factory for Update 62PD-9,701 zeR|Rectifier IRFRO14 meRInecuner AI I HEXFET® Power MOSFET IRFU014 + Surface Mount (IRFRO14) + Straight Lead (IRFUO14) + Dynamic dvidt Rated BVpss 60V Rosion) 0.202 Ip 8.4A Description n-channel Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, infra red, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 2watts | _D-Pak are possible in SMD applications. TO252AA |-Pak TO.251AA Absolute Maximum Ratings Parameter Max. Units 1b @ Te = 25°C _| Continuous Drain Current, Vos@10V. 84 ip @ Te = 100°C | Continuous Drain Current, Vas@10V 6.0 A low Pulsed Drain Current © 34 Po@ Te = 25°C _| Maximum Power Dissipation 30 Ww Linear Derating Factor 0.20 WK. Ves Gate-to-Source Breakdown Votage _ 220 Vv Eas ‘Single Pulse Avalanche Energy @ 47 lovidt Peak Diode Recovery dvict 45 Vins. Ty ‘Operating Junction and “$510 +175 ‘Storage Temperature Range “c Soldering Temperature, for 10 586. '300 (0,063 in, (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. | Units Fasc ‘Tunetion-to-Case = 50 [Recs Case-to-Sink © _ 17 = kKw® [Ra ‘Junction-to-Ambient, Typical Socket Mount| = 110 63IRFRO14, IRFU014 [TOR] Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parametor Min. | Typ. Units Test Conditions BVpss___|Drainto-Source Breakdown Voltage | 60 | — V_[Ves0V, Ip-250uA. [aBVoss/at, | Temp. Costfcient of Breakdown Voltage 083 VPC [Reterence to 25°C, Ip=1mA Rosion, | Static Drain-to-Source On Resistance | — | — B_[Vas=10V, Ip =5.0A Vestny | Gate Threshold Votage V_[Vos=Vas. lo-250WA as Forward Transconductance = |S _[Vps=25V, Ips5.04 loss | Zero Gate Voltage Collector Current HA” [Vps=60V, Vas-OV Vos=48V, Vas=OV,Ty=150°C less (Gate-to- Source Forward Leakage =[= wa [Was=20V. Gate-o-Source Reverse Leakage Vas=-20V [G0 Total Gate Charge Ip=10A, Vos=48V, Vag=10V Om Gate-o-Source Charge "© | Soe Fig 6 and 13@ Os Gateto-Drain (Miller) Charge eon Turn-On Delay Time 10 Voo=80V, Ip-t0A a Rise Time 50 ns |PRou240, Ryu2.70 tan Tum-Off Delay Time = [13 Seo Fig. 100 % Fall Time. 19 lo Internal Drain Inductance 45 ‘Between lead, mm (0.25in,) 9 is internal Source Inductance Sol764[ eat al copra ‘sl contact. i Cae input Capacitance 300 | = Vas=0V, Vos=2 Coss ‘Output Capacitance 160 | — | pF | fe1.0Mhz Cree Reverse Transfer Capacitance 29 ‘See Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. [Max. | Units TTest Conditions 15 Continuous Source Current 7 84 = ° (Boxy Dose) a | tow ism Pulsed Source Current — || 34 integral reverse ody Diode) © rn junction diode. fs Veo Diode Forward Voliage = 16 | V [125°C n8.4A, Vgg-0VO te Reverse Recovery Time 34 140 [ns _|Ty=25°C, lem 10A, Onn Reverse Recovery Charge 0.090] —~ | 0.40] KC |dilct=100A/uS® ton Forward Tura-On Time nnse turn-on time is nope (turn-on dominated by Ls + Lo) Notes: © Ropetitve rating; Pulse wieth imited by @ len<.4A, dit<9OAIus, VoosBVoss, _ @ Mounting surtace: ‘max, junction temperature See igure 11) T,e175°C Suggested R-240 flat, smooth, greased ®Voo=25V, Starting Ty=25°C, L-B50uH, © Pulse width < 300s; duty Cycle <2% = OKW = °CIW Rig=252, Peak Ing=8.48 (See figure 12) 64[TeR] Ip, Drain Current (amps) ‘20us PULSE WIDTH Te = 25°C wt 108 oF Vps. Drain-to-Source Voltage (volts) Fig1. Typical Output Characteristi To = 25°C ‘0! Ip, Drain Current (amps) Vos = 25 20us PULSE WIDTH ATECEEETEEEOT ae Vas, Gate-to-Source Voltage (volts) Fig3. Typical Transfer Characteristics 0 |p, Drain Current (amps) to-Source On Resistance (Normalized) Rosjon), Drait w IRFU014, IRFRO14 T20us PULSE WIDTH| t Dlr T 10 17580 Vps, Drain-to-Source Voltage (volts) Fig2. Typical Output Characteristics, tp a2 ¢ 20 40 6) ao To = 150°C = We vos = 10¥ 120-440 #60 160 Ty, Junction Temperature (°C) Fig 4, Normalized On-Resi Temperature fance Vs. 65IRFRO14, IRFU014 [FoR] — eS 609 a erve TTT 7 z os Zi : ca s Sx 5 8 5 8. é= @ = &. 1 . S Td FTEST-CrRCUTT Tee Fioune 13 af °9 > . 7 is Vos, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain- Fig 6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage 1 > Spoon eis wer CierTeD = BY Pos on E ot 7 & Zz | E See é 5 5 5 .° 7 g: 5 & é sh 4 Tenstec 8 + Scere i | vos oy], “PATTI TT ese Sol woo 5 1 tS zo 25 or F FS 4 2B yg FB yee FS gos Vsp. Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 66Ip, Drain Current (amps) + | PN al IRFU014, IRFRO14 Fig 10a. Switching Time Test Circuit \ Vos IN fe coe is 4 1 | _ 1 1 10% ! Al 50 5 100 125 150 Vos he tajon) tr tyom te Te, Case Temperature (°C) Fig 9, Maximum Drain Current Vs. Case Temperature SINGLE PULSE ‘Thermal Responce (Z asc) 10° 107 10 (THERMAL RESPONSE) Fig 10b. Switching Time Waveforms es Peed noTes: {DUTY FACTOR, D=ti/¢2 2. PEAK T)=PoM * Zenye + Te 0.8 1 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 67IRFRO14, IRFU014 Venipbetan — YOs>— espe Fig 12a, Unclamped Inductive Test Circuit 8Voss Noo Fig 12b. Unclamped Inductive Waveforms. ‘Charge — Fig 13a. Basic Gate Charge Waveform TOR| a a” 4 ; BOTTOM 8.48 ge & ae j 7 T Zo {tt 2 5 deb » eae Starting T,, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current — -Loertfeguetor _ [Sane Type I eeDur. Ig bo Curent Saning Resistors Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix C: Tape & Reel Information Appendix D: Part Marking Information 68 Intemational z@R|RectifierInternational zeR|Rectifier PD-9.702 IRFRO24 HEXFET® Power MOSFET + Surface Mount (IRFR024) + Straight Lead (IRFU024) + Dynamic dvidt Rated Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, IRFU024 Ss n-channel BVpss 60V Ros(on) 0.102 Ip 16A and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, infra red, or ‘wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 2 watts are possible in SMD applications, af TO.282AA |-Pak TO.25144 Absolute Maximum Ratings Parameter Max. Units ip @ Te = 25°C _| Continuous Drain Current, Ves@10V 16 ly @ Te = 100°C | Continuous Drain Current, Vas@10V rT A ow Pulsed Drain Current © 4 Po@ Te = 25°O _| Maximum Power Dissipation 50 w Linear Derating Factor 0.33 Wik [Ves Gate-o-Source Breakdown Voliage 3220 v E, ‘Single Pulse Avalanche Energy @ 81 md ldvidt Peak Diode Recovery dvict @ 55, Vins ITs ‘Operating Junction and “$5 t0 +175 Storage Temperature Range “c ‘Soldering Temperature, for 10 sec. ‘300 (0.063 in, (1.6mm) from case) Thermal Resistance Parameter Min. Tye. Max. [Unis Fasc ‘Junetion-to-Case - 30 [Pcs Case-to-Sink © 17 —=__| Kw Pay ‘Junction-to-Ambient, Typical Socket Mount | 110 69IRFRO24, IRFU024 TSR] eee ee ce eteee eRe SPREE eee a eee tse a Electrical Characteristics @ Ty = 25°C (unless otherwise specified) c Parameter Min. [Typ- [Max. | Unis est Condiions Voss | Drainto-Souree Breakdown Vokage | 60 | V_[WessBV, =250uA. [sBVoss/A, | Temp. Coefficient of Breakdown Votage | [0.061] | Wet [Reference to 25°O, boTA Rosion) Static Drain-to-Source On Resistance | — | [010 [A _|Vog=10V, Ip =9.6A@ Vesiay [Gale Threshold Votage 2d [= [40 | V[VoseVos. -250uA Gis Forward Transconductance - S__|Vps=25V, Ipg=9.6AQ_ loss | Zero Gate Votage Collector Gurrat 250} uA |Vose60V, Vase0V 1000 Vos=48V. Vas=0V.T,=150° less [Gateto Source Foward Leakage =| s00 |", ves=20¥ Gatet-Source Reverse Leakage = [500 Ves=20V a, Total Gate Charge =| 28 Reavy Op. Gate-o-Source Charge = [54] 00 looper 1a lO, | Gate-o-Drain (Miler) Charge = [18 gon, Tutn-On Delay Time a6 [~ ena ian ie Rise Time T1=| ,, |reien mean gon | Turn-Of Delay Time a f= Bscestiae t Fall Time 37. ey Internal Drain Inductance 45 ‘Between lead, 6mm (0.25in.) to} ts Internal Source Inductance Tas] =| " |tomesckas, | el contact i [Gag put Capachance w= Ves-0V, Wog-2(Soe feu 12) (Cou | Output Capacitance 360 pF | fet.omne (Cisz [Reverse Transter Capacitance = [7 [= Seo Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Min. [ Typ. [ Max. | Units | Test Conditions ie Continsous Source Gurent - [=| 16 pI . (Body Diode) A. | showing tre len Pulsed Source Current [|e integral reverse (@ody Diode) © Brn junction diode i Vso. Diode Forward Voltage = | = [45 [Vv Tr n25c, 1g=16A, Vgg-0VO a Reverse Recovery Tine o 200_| 1 | Ty- 25° rat 4A, Onn Reverse Recovery Charge 022 | — [008 | nC jdildt=-1004/s® ten Forward Tur-On Time nwo oan mot ng (un-on dominated by Ly + Ep) Notes: © Repetitive rating; Pulse width imited by ‘max. junction temperature (See figure 11) ® Voo25V, Starting Ty=25°C, L=450uH, Rg=252, Peak Ing i6A (Soe figure 12) 70 ® ls0S16A, dildts1 10A/ys, VopsBVpss, © Mounting surface: ‘T.c175°C Suggested Ro=180 flat, smooth, greased © Poise width < 300s; duty Cycle <2% — @Kiw = “CWlp, Drain Current (amps) Ip, Drain Current (amps) wo i iz 20us PULSE. WIDTH Te = 25° wt oF ow Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To = 25°C ‘0! Vos = 25 20us PULSE _WIOTH| aoe eee eee cece reer Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics 109 Ip, Drain Current (amps) & Bous PULSE WIOTH| To = 175°C wt ro oF Vos. Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Te = 150°C ip > tae Source On Resistance (Normalized) os : Nag = tor| So=40=20 020408080 100 Te0 140 160 0 Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature ° 1IRFRO24, IRFU024 a Was = OV, 7 = nee Tae ee (ae iss = Cys * Cog Cys SHORTED res oo z tos TS 1000} Coss = Cas + Coa . 5 LiL = g | S55 2 Cy > 8 as - S a 3 | Sos 3 3 sm {it s g °° o MN a oa alae Pre tres, 8 Fon Test cracurT SS i See FIGURE 13, ol, il . Se ecaee i eaeeeeaeereca ta f rr Vps, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain- to-Source Voltage a E é = 104) 5 3 = é 2 wi 8 & g a Ves = ov aa oF TE Te Vsp, Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage 72 Zo Q,, Total Gate Charge (nC) Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage (OPERATION IN THIS AREA LIMITED BY Fas (ont Ip, Drain Current (Amps) Ten280C Tye475% since Purse] Pao 8 40 2 gt Vos, Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating AreaIp, Drain Current (amps) 16 22 1} IRFU024, IRFRO24 a \ oLtiLit 87ST To, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature SINGLE PULSE (THERMAL, RESPONSE) Thermal Responce (Z aic) 108) 10) 10 Fig 10a. Switching Time Test Circuit rv oon seceesrean | /\_i 10% A Ves AT XY tea ‘aon Fig 10b. Switching Time Waveforms TL Bel {DUTY FACTOR, O=t1/¢2 2. PEAK Ty=Pow x Zenje * Te rod ot 1 10 1s, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 73IRFRO24, IRFU024 Vary tp obs required peak Vos geese Fig 12b. Unclamped Inductive Waveforms ‘Charge — Fig 13a. Basic Gate Charge Waveform Eas, Single Pulse Energy (mJ) 20 oN ann 50750 150178 Starting Ty, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current ure egltoe ‘Sere Type Jamak fs * b cron Sampling Restore Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix C: Tape & Reel Information Appendix D: Part Marking Information 74 International [z¢R] RectifierPD-9.524C International ToR|Rectifier IRFR110 HEXFET® Power MOSFET l R F U 1 1 0 + Surface Mount (IRFR110) D + Straight Lead (IRFU110) + Repetitive Avalanche Rated BVoss_100V + Dynamic dv/dt Rated e Rosen) 0.54 : Ip 4.78 n-channel Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, infra red, or wave soldering techniques. The straight lead version (IRFU series) is for | through hole mounting applications. Power dissipation levels up to 2 watts are possible in SMD applications. declan ye Absolute Maximum Ratings Parameter Max. Unis lp @ Te = 25°C _| Continuous Drain Current, Vos@10V_ 47 lp @ Te = 100°C _| Continuous Drain Current, Ves@10V 33 A low Pulsed Drain Current © 19 Po@ Te = 25°C _| Maximum Power Dissipation 30 w Linear Derating Factor 0.20 WK Vos Gate-to-Source Breakdown Voltage 220 Vv [Ess ‘Single Pulse Avalanche Energy @ 100 md laa ‘Avalanche Current © 47, A [Eas Repetitive Avalanche Energy © 3.0 md léviet Peak Diode Recovery dict @ 55 Vis its (Operating Junction and “$5 to +175 Msn [Storage Temperature Range © Soldering Temperature, for 10 sec. '300 (0.063 in. (1.6mm) trom case) Thermal Resistance Parameter Min. Te. Max.__| Units Fac ‘Janetion-to-Case = — 5.0 Recs Case-io-Sink © 7 =| Kw Pasa Junction-o-Ambient, Typical Socket Mount = 110 75IRFR110, IRFU110 Electrical Characteristics @ T, = 25°C (unless otherwise specified) Parameter Min. [Typ. [Max. | Unis Test Condiions BVoss | Drainto-Source Breakdown Voltage | 100] -- | -- | V | Vasr0V, lp-250uA. [aBVoss/a7, | Temp. Costfcient of Breakdown Voltage VPC _[Reterence to 25°C, Ip=tmA Rosin __ | Static Drain-to-Source On Resistance 8 [Voge 10V, fp =2.6AD Vesie | Gate Threshold Voltage V_|Vos=Vos, lo=250uA lo Forward Transconductance 'S_|Vps=50V, Ingn2.8A@ loss Zero Gate Voltage Collector Current HA [Vps=100V, Vage0V Vos=80V, Vase OV, Ty=150°C less [Gate-1o-Source Forward Leakage na [Was=20V [Gate-to-Source Reverse Leakage Vos=20V, {Oa Total Gate Charge p=5.6A, Vog=80V, Ves=10V |. (Gate-to-Source Charge A | Soe Figé and 13 [Og | Gate-to-Drain ("Miller") Charge ton Turn-On Delay Time Voo50V, Ipp56A fe Fise Time ns |Rox240, Ro~8.40 aoe Turn-Off Delay Time S00 Fig. 10 w Fall Time bo Internal Drain Inductance Between ead, Jémm (0.25in.) >| ts Internal Source Inductance 75 nit | from package, ‘sl [contact é on input Capacitance 180 Vose0V, Vos=25V Cons [Output Capacitance = [80 pF | fat.omnz on Reverse Transfer Capackance res [Soo Fig. § Source-Drain Diode Ratings and Characteristics Parameter ‘Min. | Typ. [ Max. [ Units ‘Test Conditions is Continuous Source Current ~ 747 ° (Gody Diode) cae sw Pulsed Source Current ~[=[ integral reverse (Body Diode) © -n junction diode 5 Diode Forward Voltage = 25 | V_ | Ty-25°C, Ignd.7A, Vag-0VO Roverse Recovery Time 50 200 | ns _|Ty=25°C, Ien5.6A, Reverse Recovery Charge 022 0.88 [uC _|di/dte100AuS® Forward Tura-On Time nisictaron tne is rogigle (urn-on le dominated by Us + La) © Repetitive rating; Pulse width imited by @ IgpS4.7A, dUCSTSAIS, VopSBVpss, _ © Mounting surtace: max. junction temperature (See figure 11) T,S175°C Suggested Rg=242. flat, smooth, greased ® Vo0=25V, Starting Tyx25°C, L«74mH, © Pulse width < 300us; duty Cycle <2% = OKW = °C/W Rg=250, Peak Iage4.7A (See figure 12) 76Ip, Drain Current (amps) In, Drain Current (amps) w % <5 |z0us PULSE WIDTH| | To = 259C rf 00 ry Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To = 25°C pg = Sov 20us PULSE_WIOTH a Ves; Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics 0 IRFU110, IRFR110 3 § 3" g £ a s Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To = 150°C = sey | 3 q° | 3 3 ay Ei) 8 |_| 7 : PP oes 3 L °sg=4b=20 0 204d 60 80 100 120 140 160 180, Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. TemperatureIRFR110, IRFU110 [TOR 409) Vos 2 OT ens = C z a 3 € g., i g 3 Bo 5 s 2 ° cy a l l | see Ficune 13 oF °o 2 = = 70 Vos, Drain-to-Source Voltage (volts) Q,, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain- Fig 6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage OPERATION IN THIS AREA LIMITED 8¥ Fos on) Ip, Drain Current (Amps) Isp, Reverse Drain Current (Amps) EBT Be OS OTe Vp. Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 78IRFU110, IRFR110 Paleo With tus Duty Factor £0.% Ip, Drain Current (amps) J CLT] To, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 2 e075 ~—«00 5 t SINGLE PULSE (THERNAL_RESPONSE) Thermal Responce (Z sic) 10 107) ¥ Fig 10a. Switching Time Test Circuit i eee wx —Wy \/ | /\ 10% A Vos “AT TY Neon) te tyom te Fig 10b. Switching Time Waveforms THEE it Pbury Facron, omts/e2 2. PEAK T)=Pou x Zenje * Te 107 4 1 10 1), Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 79IRFR110, IRFU110 [TOR 75, wea 250) Lot sorta 2°78 BVoss Egg, Single Pulse Energy (mJ) & a a rr Starling Ty, Junction Temperature (°C) a Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12. Unclamped Inductive Waveforms. — Suman Reguaor ‘Same Type 1 aur, 10 ‘Charge — lk lb Cure Sapling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing ‘Appendix C: Tape & Reel Information International ‘Appendix D: Part Marking Information zeR|Rectifier 80International zer|Rectifier PD-9.523C, IRFR120 HEXFET® Power MOSFET IRFU120 + Surface Mount (IRFR120) > + Straight Lead (IRFU120) + Repetitive Avalanche Rated BVpss_100V + Dynamic dvidt Rated a Rosin) 0.272 fi Ip 8.40 Description n-channel Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, infra red, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 2 watts are possible in SMD applications. Sf TO.252AA |-Pak TO.251NA Absolute Maximum Ratings Parameter Max Unis ip @ Te = 25°C _| Continuous Drain Current, Vas@10V 84 lp @ To = 100°C | Continuous Drain Current, Vos@10V 60 a lost Pulsed Drain Current © 34 Po@ To = 25°C _| Maximum Power Dissipation 50 WwW Linear Derating Factor 0.33 WKO, Ve Gate-to-Source Breakdown Voltage 320 v Ex ‘Single Pulse Avalanche Energy © 210 mn Ia. ‘Avalanche Current © 84 A Esa Repetitive Avalanche Energy © 5.0 md [evict Peak Diode Recovery dviat @ 55 Vins ft Operating Junction and “$5 t0 +175 Tx ‘Storage Temperature Range *c Soldering Temperature, for 10 sec. '300 (0.063 in. (1.6mm) from case) 4 Thermal Resistance Parameter Typ. Max, [Units Rac ‘Junetion-to-Case sa 3.0 Pcs. (Case-to-Sink © = 17 | KWo Pasa ~Junction-to-Ambient, Typical Socket Mount | — = 110 81IRFR120, IRFU120 TOR, Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. [Typ. [Max. | Units Test Conditions [BVoss | Drainto-Source Breakdown Voltage | 100 V_|Vas=0V, lo-250uA. [ABVoss/aTy | Temp. Costficient of Breakdown Voltage | — VPC [Reference to 25°C, Ip=1mA Rosiony | Static Drain-to-Soures On Resistance | — B_|Vase10V, Ip =5.0AD Wasiey | Gate Threshold Vatage 20 V_[Vos-Ves.lp=250nA ote Forward Transconductance 16 S| Vps=50V, Ipe=5.0AD loss, [Zero Gate Votage Collector Current | — HA’ [Vos=100V, Vas=0V Vos=80V, Vas OV, Ty=150°C ess [Gate-io Source Forward Leakage ma [Was=20V (Gate-1o-Source Reverse Leakage Ves=-20V, lo, Total Gate Charge Tp=9.2A, Vog-80V, Vogut0V On (Gate-1o-Source Charge 10 | see Fg 8 and 190 Og Gateto-Drain (Miller) Charge ton) Turn-On Delay Time 6a | — Voo-50V, Ip-8 2A o Riso Time 27 ne |Reet80, Rya5.20 ton Turn-Off Delay Time 18 Seo Fig, 10 w Fall Time 7 Te Internal Drain Inductance 45 Botwoon lead, 7 ‘6mm (0.25in,) H_ | from package, ts Internal Source Inductance Sore 7 ra a cei oo a contact 4 on Input Capacitance ‘360. Vos=0V, Vos-25V Coue [Output Capacitance 150 pF | fat.0Mnz (Cras Roverse Transfer Capacitance =a T= See Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter ‘Win. | Typ. | Max. | Units “Test Conditions is Continuous Source Current -[- pea MOSFET AbD ° (Body Diode) a. | showing the su Pulsed Source Gurrent 38 integral reverse (Body Diode) © pn junction diode. is Veo Diode Forward Voliage 25 |W [Tn25°C, ign84A, Vasn0VO te Rloverse Recovery Time = [280 [ns _|Ty-25°C, ipa9.2A, (Onn Reverse Recovery Charge 033 1.3 | HC |divota100AuS® [hon Forward Turn-On Time nrinsc turn-on time is nogigbo (turn-on e dominated by Us + La) Notes: © Repetitive rating; Pulse width imited by @ Igo<8.4A, difdt<1 10A/Us, VoosBVpgs, © Mounting surtace: max. junction temperature (See figure 11) ® Vop=50V, Starting Ty=25°C, Lad.AmH, Rig=250, Peak I_gn8.4A (Seo figure 12) Tys175°C Suggested Rq=182 flat, smooth, greased @ Pulse width < 300us; duty Cycle <2% = ©KW = "CW 82TOR] IRFU120, IRFR120 1o!fecroe z = 5 a 5 = g 5 2 oO Ew Bo t Hh 20s PULSE WIOTH [eos FALSE wioTH Tos oste Foe 17500 1078 100 102 sot 100 0 Vps, Drain-to-Source Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, To = 25°C To = 150°C 30 a nf Bas at +4 a 3 ©, 3 Se | 8 gif 1 3 3 i § 34, & € 5 10° g { se 6 08 Vos = Ov zg Hee = ous puse wrote] & 4 gL | Vgg = 10¥ eee OSS=ATTET OBO AEB BO TOO TEDDIES 0 Ves, Gate-to-Source Voltage (volts) T,, Junction Temperature (°C) Fig 3. Typical Transter Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 83IRFR120, IRFU120 Capacitance (pF) Isp, Reverse Drain Current (Amps) 20 FS aw Tp = Se + Ogg, Cys SHORTED] 60 i i f ~ Vos, Gate-to-Source Voltage (volts) t tr u FOR TEST CIRCUIT | * + SEE FIGURE 13 f TTT i= Ai) se Vos, Drain-to-Source Voltage (volts) Q4, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain- Fig 6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage BY Fos (oN) é = fe 109 £ 8 g 4 g 3 a Yes = 0V since Puse| Vsp, Source-to-Drain Voltage (volts) Vps; Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 84TOR 10 Ip, Drain Current (amps) PSC IRFU120, IRFR120 Fig 10a. Switching Time Test Circuit Vos 0% | \/ \ iV 10% ! I ears eae en eo rece Mages ‘en ten To, Case Temperature (°C) Fig 9, Maximum Drain Current Vs. Case Temperature 40 8 No é Eon SINGLE PULSE 2 Thera spose 104! 10° 104 10% Fig 10b. Switching Time Waveforms NOTES: 1. DUTY FACTOR, O=ti/t2 2. PEAK Ty=Pou * Ztnje * Te 107) 0.4 1 10 ‘ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 85IRFR120, IRFU120 TER L soo vayiptoottin VOS— [Te 3B She Het hour. =f ere Rg 4) . & ah Vo = = B | roy, A 2 | agra ' sol 2 N @ Fig 12a. Unclamped Inductive Test Circuit 2 200 BY _ [1 PYoss B 00 a » bene s 8 5 mm wes Starting Ty, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12. Unclamped Inductive Waveforms, _— Serra Regular Same Type if 1 | pp —senal(g) EE ! ! put. 7 Vos age — 7 I fee Canet Sarlng Retr Fig 13a, Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix : Package Outline Mechanical Drawing Appendix C: Tape & Reel Information Appendix D: Part Marking Information TOR tare ler 86PD-9.526B, international 2F| Rectifier IRFR210 HEXFET® Power MOSFET IRFU210 + Surface Mount (IRFR210) D + Straight Lead (IRFU210) BV 200V + Repetitive Avalanche Rated oss + Dynamic dv/dt Rated a Roscon) 1.52 : Ip 2.6 n-channel Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for DP. through hole mounting appications. Powerdssipationlevels upto 2watts | DRAKE are possible in SMD applications. TO-251AA, Absolute Maximum Ratings Parameter Max, Units: Ip @ Te = 25°C __| Continuous Drain Current, Vag@10V 26 lp @ Te = 100°C | Continuous Drain Current, Vqs@10V_ 17 A Hom Pulsed Drain Current © 8.0 Po@ Ts = 25°C _| Maximum Power Dissipation 25 Ww Linear Derating Factor 020 wKo Was Gate-to-Souree Breakdown Volage 220) Vv [Eas ‘Singlo Pulse Avalanche Energy @ 64 Ey] on ‘Avalanche Current © 27 A [Ema Repetitive Avalanche Energy © 25 md lave Peak Diode Recovery dvict © 50 Vins Ts Operating Junction and -55 to +150 lTara Storage Temperature Range “c Soldering Temperature, for 10 sec. ‘300 (0.063 in, (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units Rais ‘Junetion-to-Case i = 5.0 |Bocs. ‘Case-to-Sink © 17 = KWo Rasa, Junction-to-Ambient, Typical Socket Mount =_ 110 87IRFR210, IRFU210 TOR) Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. | Typ. [Max. | Units Test Conditions [BVoss | Drai-io-Source Breakdown Vollage | 200 Ves-0V, Ip=250uA [ABVpss/AT| Temp. Coefficient of Breakdown Voltage Retorence to 25°C, Iga tmA Rosen) __| Static Drain-1o-Source On Resistance Vas=10V, Ip =1.6A asin, | Gate Threshold Volage Vos=Ves: lp=250uA a Forward Transconductance Vps=50V, Ing=1.6A9) loss Zero Gate Voltage Collector Current Vps=200V, VaseOV Vps=160V, Vas-0V.Ty=125°C less Galoste Source Forward Leakage Vess=20¥ Gate-to-Source Reverse Leakage Vos=-20V 2, Total Gate Charge lonB.3A, Voan 100, Ose Gatoto-Source Charge Ves=10V® om [Gate-o-Drain (Miller) Charge son Turn-On Delay Time Vpo#100V, lpx3.34 h Rise Time 3 zt Figu240, ip~3020 tac Turn-Off Delay Time ¥ Fall Time tp Internal Drain Inductance = Between lead, e Jémm (0.25in.) °} nH | from package Ts Pintemat Soares intance == rom package, ) contact. i's} Gas input Capacitance 740 Vose0V, Vase25 Coss Output Capacitance 53 pF | f=1.0Mhz om Reverse Transfer Capacitance = [15 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. [ Max. | Units Test Conditions ls Continuous Source Gurrent ~|-)a7 noseeTa 3 (God Dios) stone te A is Pulsed Source Gurrent =] ~ [eo Integral reverse (Body Diode) © p-n junction diode, f Vso Diode Forward Voltage =| = [20 [V_|pn28°0, 1622.70, Voge0VO) le Reverse Rocovery Time 75 [=] 310 | ns_|Ty-25°O, Ip-3.9, on Reverse Recovery Charge daa] = | 14 | ue |dict=100As® on Forward Turn-On Time nvinsie non time & maggie (ur-on is dominatod by Us + Lp) Notes: © Repetitive rating; Pulse wicth limited by @ Igp&2.7A, d/StSTOAIUS, VooSBVoss, © Mounting surtace: max. junction mperature Tjs150°C Suggested Ron240t flat, smooth, greased ® Voo=50V, Starting Ty=25°C, Let6mH, __ @ Pulse width = 300us; duty Cycle <2% © Kaw = °C Fig=252, Peak Inge2.6A For more information on the same die in a HD-1 package refer to IRFD210. 88International zeR|Rectifier PD-9.703 IRFR214 HEXFET® Power MOSFET IRFU214 * Surface Mount (IRFR214) + Straight Lead (IRFU214) BV, 250V + Repetitive Avalanche Rated Oss + Dynamic dv/dt Rated e Rosen) 2.0 Ip 2.2A oy n-channel Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. The D-Pak is designed for surface mounting using vapor phase, infra red, or wave solderit g techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 2 watts | D-Pak are possible in SMD applications. sea | Pak ‘Absolute Maximum Ratings Parameter Max. Units lp @ To = 25°C _| Continuous Drain Current, Vas@10V 22 ly @ Te = 100°C | Continuous Drain Current, Vas@10V 1a A low Puised Drain Gurrent © 38 Po@ Te = 25° _| Maximum Power Dissipation 25 Ww inear Derating Factor 0.20 WKo Vas Gate-to-Source Breakdown Votiage 220 Vv E Single Pulse Avalanche Energy @ 6 md laa ‘Avalanche Current © 22 A Ean Repetitive Avalanche Energy © 25 md levit Peak Diode Recovery dviat 20 Vins ts (Operating Junction and “BS to +150 Tex ‘Siorage Temperature Rango *c Soldering Temperature, for 10 sec 300 (0,069 in, (1.6mm) from ease) Thermal Resistance Parameter Min hyp. Max__| Unis Rese. Junction-to-Case _ 5.0 Recs. Case-to-Sink © aot Kw® Rasa Junction-to-Ambient, Typical Socket Mount 110°IRFR214, IRFU214 TOR Parameter Max. | Units Test Condiions BVoss__|Drair-to-Source Breakdown Vollage V_|Vas-0V, lon250uA, [ABVosg/AT, | Temp. Costfcient of Breakdown Voltage 10.39 | — | WPO [Reference to 25°C, Ip=tmA Rosin | Static Drainto-Source On Resistance | — 20 | @ _[Voget0V, Ip =1 3AD Vestn | Gate Threshold Voltage 20 V_[VoseVos. lo=2501A le Forward Transconductance 12 [= S| Vpse50V, Ipg=1.3A@ loss Zero Gate Votage Collector Current | | — | 250 | HA | Vpg=250V, VageOV 1000 Vps=200V, Vas=OV,T=125°C Tess Gate-to-Source Forward Leakage 500 |, [Vas=20V Gate-to-Source Reverse Leakage 500 Vose-20V Oy Total Gate Charge 82 ip#2.7A, Vose200V, [ge [Gate-to-Source Charge 1.8] nC | Vegei0vd [Qe Gatexto-Drain (Miller) Charge ~[= [4s aon Turn-On Delay Time = 70 [= Voo=125V, Ipe2.7A Ie Rise Time = [78 ns |Ror240, Pou45Q@ aon ‘Tur-Off Delay Time 16 w Fail Time 70 tb Internal Drain inductance 45 Between lead, iE 6mm (0.25in.) > ts Tatermal Source Inductance Servet] ct leases 7 [contact a Cas Input Capacitance 140 Ves 0V, Vog-25V Coxe (Output Capacitance a pF | fat.oMhz (Cr Reverse Transfer Capacitance = [e6 [= Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions ls Continuous Source Current ~ f= [2 ° (ey Bose) | mewrge sm Pulsed Source Current _ 88 integral reverse (Body Diode) © Pn junction diode. Is Vso Diode Forward Voltage = | 20 | V [128°C ig=22A, Vage0VO te Reverse Recovery Time 7 | = | 390 | ns _|T)e25°C, m2.7A, on Reverse Recovery Charge 032[ = [13 | HO |dildtt00aus@ on Forward Turn-On Time intros rn-on tf nogigbe (turn-on dominated by Lg + Lo) ® Repetitive rating; Pulse width limited by @ lgp2.2A, dildts65A/us, VooSBVoss, © Mounting surface: ‘max, junction tamporature (S90 fgure 11) T)$150°C Suggested Rg=240. flat, smooth, greased ® Voo*50V, Starting Tye25*C, Le2tmH, © Pulse wicth < 300us; duy Cyclo <2% © © Kw = *Crw Rg=252, Peak Iag=2.2A —— 90Ip, Drain Current (amps) {p, Drain Current (amps) 109} aH i }20us PULSE WIOTH To = 250c 1 wt Vos, Drain-to-Source Voltage (volts) wt Fig 1. Typical Output Characteristics, To = 25°C wa Vpg = SOV 20us PULSE WIDTH Tere een Een error Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics IRFU214, IRFR214 lo, Drain Current (amps) Rous PULSE WIDTH| Tc = 150°C “ot rr Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Te = 150°C. 3.0 Bee 25 wt (Normalized) os Ros(on, Drain-to-Source On Resistance Vos = 700 °-Sgq ad 20020 ad G0 8000 420 140 Teo Tu, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature a1IRFR214, IRFU214 [TOR Tp = 2A Vg = 2004: 08 vos = i250 e Vos = Sv | 2 200} Coss = Cas + Coo Capacitance (pF) 5 rir Ves, Gate-to-Source Voltage (volts) | | Cogs. — {t ‘ lee a iit ‘FOR TEST CIRCUIT 10 308 0 2 4 © e 10 Vps, Drain-to-Source Voltage (volts) Q,, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain- Fig 6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage 10% 108 zg - BY gs (ON g < ed i Es = wl é 3 : 8 Terese oe 7s 77 TE 7 mes we? ef at Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 92TOR] IRFU214, IRFR214 20 Pulse Wh tu Bus soma = ¥ é 1a Fig 10a. Switching Time Test Circuit 3 £ $, Vos. 6°" oon Nf Ss y 7 /\_Ni 10% A a ar a Ves —A_ {A EY Tc, Case Temperature (°C) tgon) te tego) Fig 9, Maximum Drain Current Vs. Fig 10. Switching Time Waveforms Case Temperature 10 My é 4 ‘SINGLE PULSE Eo: (THERMAL RESPONSE) : a LS z cm Slee NOTES: 4. DUTY FACTOR, Dets/e2 2. PEAK Ty=Fou x Zthjo * Te 107 107) 10 10° 10 Of 1 10 1h, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRFR214, IRFU214 TOR, L 180 v 7 venippaan — YOS eat ce =| Eur. > sorrow 2.28 Ro .. 2” + oo . roy, fk Be » Y cota 8 if é Fig 12a, Unclamped Inductive Test Circuit 3 4 BV, 7 oss re Yoo « foot =o me 80 Fig 12b. Unclamped Inductive Waveforms ‘Charge — Fig 13a. Basic Gate Charge Waveform Starting Ty, Junction Temperature (°C) Fig 12c, Maximum Avalanche Energy vs. Drain Current Regulator ‘Sere Type 1 es0Ur, aT eH Is bo ‘Curent Sapling Resistors Fig 1b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix C: Tape & Reel Information Appendix D: Part Marking Information 94 International TeaR| RectifierInternational zer|Rectifier PD-9.525C IRFR220 HEXFET® Power MOSFET IRFU220 + Surface Mount (IRFR220) D + Straight Lead (IRFU220) BY, 200V + Repetitive Avalanche Rated oss + Dynamic dv/dt Rated a Rpsqon) 0.802 : Ip 4.84 ae n-channel Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. The D-Pak is de ved for surface mounting using vapor phase, infra red, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 2watts | _D-Pak are possible in SMD applications. ORS I Pak Absolute Maximum Ratings Parameter Max. Units Ip @ Te = 25°C _| Continuous Drain Current, Vos@10V 48 Ip @ To= 100°C | Continuous Drain Curent, Vos@10V 30 a low Pulsed Drain Current © 18 P@ Te = 25°C _| Maximum Power Dissipation 42 W Linear Derating Factor 0.39 We Vas Gate-to-Souree Breakdown Voltage $20 v Ess Single Pulse Avalanche Energy @ 120) md as ‘Avalanche Current © 48 A Esa Repetitive Avalanche Energy © 42 md lavict Peak Diode Recovery dvidt © 50 Vie ity [Operating Junction and “$510 +150 Here Slorage Temperature Range *c Soldering Temperature, for 10 see 300 (0,063 in, (1.6mm) from case) Thermal Resistance Parameter Min Ty. Max. | Unis Rose Junction-to-Case_ _ = 3.0 [Recs _ ‘Case-to-Sink © 17 = Kw® Ray Junction-to-Ambient, Typical Socket Mount = 170 95RFR220, IRFU220 TOR Electrical Characteristics @ T, = 25°C (unless otherwise specified) Paramotor Min. | Typ. [Max. | Units TTest Conditions ‘BVoss __| Drain-to-Source Breakdown Vokage | 200, Vase 0V, Ip=250uA [ABVpss/AT, | Temp. Coefficient of Breakdown Voltage |_—~ Reference to 25°C, Ip=1mA, Rosier) | Static Drain-to-Source On Resistance = Vas=10V, lp =2.98@ asin | Gate Threshold Voltage: Vos=Ves. lo=250uA te Forward Transconductance Vp5=50V, Ips=2.9A loss Zoro Gate Voltage Collector Current | — Vos200V, Vase0V = 1000 Vos=160V, Vas-0V,Ty= 125°C. less Gate-to-Source Forward Leakage na Was=20¥ Gate-to-Source Reverse Leakage Vos=20V a, Total Gate Charge = Ips5.2A, Voge 160V, las (Gate-to-Souree Charge = nC |Vaget0V@ [Os [Gate-to-Drain (‘Miller) Charge ton Turn-On Delay Time Vpo=100V, Ip=5.2A Q Riise Time 22 a Figa180, Ro=190 om Turn-Off Delay Time toy -] ™ be w Fall Time 13 [= 1 Internal Drain Inductance = [4s | = Beiwoon lead, ' ‘6mm (0.25in.) | nH |trom package, ts Internal Source Inductance = 7s P= cleaner ie. ‘sl contact. 4 Cis Input Capacitance 260 Vase0V. Vos=25V Coss Output Capacitance 100 pF | fe1.0Mhz om leverse Transfer Capacitance 30 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. [Max. | Units TTest Conditions Is Continuous Source Current ~ f~ | 48 MOSFET eymbo! ° (Body Diode) a | showing tho lew Pulsed Source Gurrent ~|-| 1 integral reverse (Body Diode) © Pin junction diode, ls Vso Diode Forward Voltage == [= [48 [Vv [1n2806 1eaa8A, Vas-0V te Reverse Recovery Time 75_| = | 300 | ns _|Tyx25°C, lpa5.2A, (Ona Reverse Recovery Charge 046 | — [18 [HC |dilctet00as@ tn Forward Tumn-On Time intnei non ne fs nogige (turn-on fs donated by Le + Lo) Notes: © Repsttive rating; Pulse width limited by @Igo integral reverse (Body Diode) © Pn junction diode. ls Vso Diode Forward Voltage 16 | V_[Ty=25°6, Ig=3.1A, VggeOVO te Reverse Recovery Time 120 600 | ns _|Ty=25°C, Ira3.3A, (Ona Reverse Recovery Charge 064 3.0 | HC |dildta100AS® ton Forward Turn-On Time nase turn-on time ls nogigbe (turn-on s dominated by Lg + Lo) Notes ‘© Repetitive rating; Pulse width limited by @ Igo3.1A, dildts65A/Us, VooSBVoss, © Mounting surtace: ‘max, junction temperature T,S150°C Suggested Rg=182 flat, smooth, greased ®Voox50V, Starting Ty=25°C, Le20mH, _ @ Pulse width < 300us; duty Cycle <2% — OKAV = CW Fig=25Q, Peak Inga31A For more information on the same die in a TO-220 package refer to IRF720. 102International zeR| Rectifier HEXFET® Power MOSFET PD-9.599 IRFR420 IRFU420 + Surface Mount (IRFR420) D + Straight Lead (IRFU420) BV, + Repetitive Avalanche Rated pss 500V + Dynamic dv/dt Rated 7 Rosen) 3.02 i. Ip 2.40 n-channel ‘Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, infra red, oF wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 2 watts are possible in SMD applications. of TO-2528A_|-Pak TO2SIRA Absolute Maximum Ratings Parameter Max. Units ip @ Te = 25°C _| Continuous Drain Current, Ves@10V_ 24 Ip @ Te = 100°C _| Continuous Drain Current, Ves@10V 15 A ow Pulsed Drain Current © 80 [P>@ Te = 25°C _| Maximum Power Dissipation 2 Ww Linear Derating Factor 0.33 WiK® Ves ‘Gate-1o-Source Breakdown Vollage 320 v E, ‘Single Pulse Avalanche Energy @ 170 md he ‘Avalanche Current © 24 A Ean Repetitive Avalanche Energy © 42 mu laviet Peak Diode Recovery dvict 35 Vins ty (Operating Junction and “$5 t0 +150 [sre Storage Temperature Range C Soldering Temperature, for 10 666. '300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min, Typ. Max. | Unis Rac ‘Junction-to-Gase 3.0 [Pcs Case-to-Sink © —__] kwo Paya ‘Junction-to-Ambient, Typical Socket Mount = 110 103IRFR420, IRFU420 [TOR] Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Mio. [Typ. [Max. | Units Test Conditions BVoss | Drainto-Source Breakdown Vottage | 500 | —~ V_|VasOV, Ipn250KA [aBVoss/aT,| Temp. Coefficient of Breakdown Voltage | —- | 0.58 VPC | Reterence to 25°C, Ip=tmA Rossen) | Static Drainto-Source On Resistance | — | — 2 [Vaget0V, Ip =1.4A® Ves | Gate Threshold Votage V_|Vos=Vas. lon 250A Ste Forward Transconductance = |S _[Vps50V, Inge! 4A@ loss Zoro Gate Voltage Collector Current 250 | HA |Vog=500V, Vas=OV 1000 Vos=400V, Vag-0V,T=125°C. loss [Gato-io-Source Forward Leakage 500 |, [Ves=20V (Gato-1o-Source Reverse Loakage = 500 Ves=-20V [a Total Gate Charge 19 1b=2.1, Voged00V, [Qe Gate-1o-Source Charge 33] nC |Vase10V@ [Oe Gate-o-Drain (Miller) Charge = [13 to Tumn-On Delay Time 30 | Voo=250V, Ipn2.1A he Rise Time 86 ip Turn-Otf Delay Time 33 te econ t Fall Time 16 to Internal Drain inductance 45 Between lead, mm (0.25in.) to) Ta ia Sos anes = papa] ™ fiorewaae, iy contact. om Tnput Capacitance 360 \Vas=0V, Vos=25V Cone Output Capacitance 92 pF | fat.oMnz Cass Reverse Transfer Capacitance = [37 |= de Ratings and Characteristi Parameter Min. | Typ. [Max. | Units Test Conditions Is Continuous Source Current — | 24 a ° (Body Diode) ia Sroweg te tow Pulsed Source Gurrent = |=] a0 integral reverse (Body Diode) © rn junction diode. ls Veo Diode Forward Voltage a= [= [16 | V[7n25°6, 1gn24A, Vgs-0VO te Reverse Recovery Time 130 520 [ns _|Ty=25°C, lpn2.1A, Ona Reverse Recovery Charge 0.35, 1.4 | HC |diidte100A/uS® on Forward Turn-On Time intinse turn-on ime is nog (turn-on dominated by Lg + Lo) © Repetitive rating; Pulse width limited by @ Igp<2.4A, didts50A/s5, VoosBVogs, _ © Mounting surtace: max, junction temperature T)s150°C Suggested Rox182. flat, smooth, greased ® Voo=50V, Starting Ty=25°C, LeSdmH, © Pulse width < 300s; duty Cycle <2% = OKW= °CW Fig=250, Peak Ingn2.4A For more information on the same die in a TO-220 package refer to IRF820. 104Intemational 2F|Rectifier HEXFET® Power MOSFET + Surface Mount (IRFR9014) + Straight Lead (IRFU9014) + Repetitive Avalanche Rated + Dynamic dv/dt Rated + P-Channel PD-9.654 IRFR9014 IRFU9014 s Description ‘Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, p-channel BVpss_-60V Rosin) 0.502 Ip -5.6A and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, intra red, or wave soldering techniques. The straight lead version (IRFU series) is for 8 ff through hole mounting applications. Power dissipation levels upto 2 watts | D-Pak Lpak are possible in SMD applications. abbak. Absolute Maximum Ratings Parameter Max Units lp @ Te = 25°C _| Continuous Drain Current, Vas@-10V_ 5.6 lp @ Te = 100°C_| Continuous Drain Current, Vos@-10V_ 3.9 A om, Pulsed Drain Current © 22 Po@ Te = 25°C _| Maximum Power Dissipation 30 Ww Linear Derating Factor 0.20 WKO_ Nas. ‘Gate-1o-Source Breakdown Vollage 320 v [Eas Single Pulse Avalanche Energy @ 140 nd la Avalanche Current © “56 A lExe Repetitive Avalanche Energy © 3.0 md ldvect Peak Diode Recovery dvict “45. Vins IT, ‘Operating Junction and “5510 +175 Mera ‘Storage Temperature Range °c Soldering Temperature, for 10 $66. 300 (0,063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Tye. Max. [Unis Rac ‘Tunation-to-Case = 5.0 Rac Case-to-Sink © 17 — | Kw [Pay Junetion-to-Ambiont, Typical Socket Mount o 110 105IRFR9014, IRFU9014 TOR Electrical Characteristics @ T, = 25°C (unless otherwise specified) Parameter Min. [Typ. [Max. | Units Test Condiions [BVoss | Drain-o-Source Breakdown Vokage V_[Ves=0V, lo=-250uA |aBVoss/aT, | Temp. Costficient of Breakdown Voltage WiC [Reference to 25°C, Ip=-tmA Rosiony | Static Drainto-Soures On Resistance 8 _[Vase-10V. Ip 3.449, Vestn | Gate Threshold Voltage V__|Vos=Ves. lo= 250A on Forward Transconductance S__|Vps=25V, Ipge-3.4AD, loss Zero Gate Voltage Collector Current HA |Vos=-60V, Vas=0V Vos=-48V, Vas=0V. y= 150°C less Gate -o-Source Forward Leakage na [Ves=20V [Gate-to-Source Reverse Leakage Vas=20V [Qo Total Gste Charge, lp=-5.6A, Vos=-48V, Vase-10V Qe (Gate-to-Source Charge nC | sco Fig 6 ard 13 [Qa Gate-to-Drain (‘Miler) Charge Ion Turn-On Delay Time a - Vopr-20V, Ipe-5.6A fe Riso Time 40 | ag | Rge240, Road 90 oe Turn-Off Delay Time 13] 00 Fig, 10 u Fall Time 7 t Intomal Drain Inductance 45 Beiween ead, yi ‘6mm (0.25in.) >| ts intemal Source Inductance 7 site ent on kee ‘a contact. i om Input Capacitance = | 280 | = Vas=0V, Vos=25V Coxe [Output Capactance 170 pF | fe1.0Mnz on Reverse Transfer Capacitance = [a7 [= ‘See Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. [Max. | Units TTest Oondiions i Continuous Source Current 56 aa ° i (ody Diode) a [srowng oa Pulsed Source Current =~|=|2 integral reverse (Body Diode) © -n junction diode, fe Diode Forward Voltage = [= [55] VW [12560 igo 560, Ve Reverse Recovery Time 35 140 | ns_|Ty-25°C, lp=-5.6A, Reverse Recovery Charge 0.049 1020 | HC |dildte-1000S9 Forward Turn-On Time nrinsic turn-on time is nog (turn-on fe dominated by Le + Lp) © Ropottve rating; Pulse wicth mited by @ Igp<-5.6A, lldts-90Ahus, VopeBVoss, © Mounting surface: ‘max. junction temperature (Seo igure 11) T,e175°C Suggested Re=240 fla, smooth, greased @Voo~-25V, Starting Tye25°C, L=5.3mH, —_@ Pulse width < 300s; duly Cycle <2% OK = “CW gn25Q, Peak I4s=-5.6A (See figure 12) 106[TOR| -Ip, Drain Current (amps) 2.5 wo 20u8 ANN wroTH To = 25°C ws 107 wo -Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To = 25°C so! -Ip, Drain Current (amps) & wo Vps = -25¥) 20us PULSE_WIOTH See eeee ree areas: -Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics IRFU9014, IRFR9014 lp, Drain Current (amps) 20us PULSE WIDTH] wt Te = 175°C sot 10° 108 -Vps, Drain-to-Source Voltage (volts) Fig2. Typical Output Characteristics, To = 150°C (Normalized) ~ os othe! Ted 0 B0-AT BOBO 100 120 440 160 80 iss 100 Rosion), Drain-to-Source On Resistance Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 107IRFR9014, IRFU9014 2 \ t | 3s g til § s 3 i ie g 1] 8 Eo GY CoS | Fol ' 64 at 1 i ; | S54 fan | “See Flcuhe 13 108 sof Vos, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain- to-Source Voltage & -len, Reverse Drain Current (Amps) ves = OV 35 T° “Vp, Source-to-Drain Voltage (volts) wt he 25 aT Fig7. Typical Source-Drain Diode Forward Voltage 108 -lp, Drain Current (Amps) 10 Q4, Total Gate Charge (nC) Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage 10 7 aTroveste ress t single euse ia igs 1 102 “Vos, Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating AreaIn, Drain Current (amps) IRFU9014, IRFR9014 6.0 so i ao 2 } Fig 10a. Switching Time Test Circuit 4 tory yom Ves 10% 1 1.9 ORE ea se Tc, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 1 fea uy SHNERBAEYHEEPonse Thermal Responce (Z asc) Naves: 1 DUTY FACTOR, O=ty/tg 2. PEAK TyPow X Zense * Te, 10°? 103 0 aos oF 04 10 1, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 109IRFR9014, IRFU9014 TOR L 400 | Veyiptoconn Vos jee) eee eee Fohour. 3 Prsotton “2:08 Pe Yoo Em Catt i Lov) % e010 1g 200 { {|} 3 @ Fla t2a, Unclamped Inductive Test Crcut a +} a ybore| LP 2% 5075 soos tS Starting Ty, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current BVoss Fig 12b. Unclamped Inductive Waveforms. Four 7, Vos Vos )-3mal LT aaa . Charge — o bo cent Sarping Restore Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing ‘Appendix C: Tape & Reel Information International Appendix D: Part Marking Information zeR] Rectifier 110International zeR|Rectifier PD-9.655 IRFR9024 HEXFET® Power MOSFET IRFU9024 + Surface Mount (IRFR9024) 7 + Straight Lead (IRFU9024) + Repetitive Avalanche Rated BVpss -60V + Dynamic dvidt Rated 2 Rpsion) 0.282 + P-Channel é Ip -9.6A Description P-channel Third Generation HEXFETs from Intemational Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, infra red, or wage soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 2 watts are possible in SMD applications. of TO252AA |-Pak TO-251AA Absolute Maximum Ratings Parameter Max. Units 1p@ Te = 256 _| Continuous Drain Current, Vag@-10V 96 lp @ Te = 100°C _| Continuous Drain Current, Vas@-10V “6.8 A lou Pulsed Drain Current © 38 Pp@ Te = 25° _| Maximum Power Dissipation 50 w Tinear Derating Factor 0.33) WK Was ‘Gate-1o-Source Breakdown Volage 320 v [Ess Single Pulse Avalanche Energy @ 300 md a ‘Avalanche Current © 96 A Eng Repetitive Avalanche Energy © 5.0 mu jovidt Peak Diode Recovery dvict “45 Vins Ty ‘Operating Junction and “$510 +175 sta Storage Temperature Range *c Soldering Temperature, for 10 sec. '300 (0,069 in. (1.6mm) from case) Thermal Resistance Parameter Min. |__‘Typ. ‘Max. Units osc unetions = ~ 3.0 Rocs Case-o-Sink © 17 —__]| kwo Pay Junction-to-Ambient, Typical Socket Mount = 110 11IRFR9024, IRFU9024 Electrical Characteristics @ T, = 25°C (unless otherwise specified) Parameter ‘Min. [Typ. [Max. | Units Test Conditions [BVoss___ | Drainto-Source Breakdown Voltage V_|Vas=0V, lo=-250uA [aBVoss/AT, | Temp. Coefficient of Breakdown Voltage VC [Reference 10 25°C, Ip=-1mA sion __| Statie Drain-to-Source On Resistance 8 [Vage10V. Ip =-5.8AD Vestn | Gate Threshold Votage V|Vos=Ves, lp=-250A te Forward Transconductance S__|Vps=-25V, Ipg= 5.809, loss [Zero Gate Voltage Collector Current HA |Vos=-60V, VaseOV Vos=-48V, Vas=0V.Ty=150°C loss Gaate-t-Source Forward Leakage na [Was=20V Gate to-Source Reverse Leakage Vas=20V, a, Total Gate Charge Ioe-11A, Vooe-48V, Voge {Qu Gate-to-Source Charge MC | Soo Fig 6 and 13@ Qs Gate-o-Drain (Miller) Charge es Tum-On Delay Time o Rise Time i tan Turn-Off Delay Time 00 Fig, 100 w Fall Time te Internal Drain Inductance Betwoon ead, 7 6mm (0.25in.) | ts Internal Source Inductance = [7s] =] fom package, ‘sl contact f Cis Input Capacitance 570 Vas=0V, Vos=25V Coss ‘Output Capacitance 360 | — | pF | fa1.0Mhz Cras Reverse Transfer Capacitance = [65 | = [See Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Win. | Typ. | Max. | Units “Test Conditions is Continuous Source Gurrent ~ [96 ° (Body Diode) Hig brerkhtaa a Pulsed Source Current = “38 integral reverse (Body Diode) © Pn junction diode, ls Vso Diode Forward Voltage a |= [63 [VW 11 225'6, tga 916A, Ves-0VO te Reverse Recovery Time 50 200 | ns _|Tye25°G, Ir=-11A, Onn Reverse Recovery Charge 0.16 0.64] uC |dicta-100AuS® ten Forward Turn-On Time Ininsic turn-on time is nogigile (Wwrn-on fs dominated by Ly + Up) Notes: © Repettve rating; Pulse width limited by @ Isg<-9.6A, diets-140Aus, Vopt 8 s | oe % _ I | = g 8 TT T i} a = LU i & | bt mH iN 8 FoR Test CIRCUIT Char aoe SEE FIGURE 13 Q 4 sree se eenO eee eeae-ceeeeaO crores ‘10° 308 -Vps, Drain-to-Source Voltage (volts) Fig5. Typical Capacitance Vs. Drain- to-Source Voltage -lsp, Reverse Drain Current (Amps) % | Veg = ov wis 35 7s 35 -Vsp, Source-to-Drain Voltage (volts) 5 7 Fig7. Typical Source-Drain Diode Forward Voltage 114 “lp, Drain Current (Amps) Q,, Total Gate Charge (nC) Fig6. Typical Gate Charge Vs. Gate- to-Source Voltage PEM Iy IN Ts ARE TMT Pos (on) oo. LSINSLE PULSE wae ty 3 gf? 5 409 Sige -Vps, Drain-to-Source Votage (volts) Fig 8. Maximum Safe Operating AreaTo, Case Temperature (°C) Fig 9, Maximum Drain Current Vs. Case Temperature 10 SHNERAP REE once Thermal Responce (Z aic) 10°? 10 40 1073 ToR! IRFU9024, IRFR9024 Vos. a ed eal T 4 Vo s ; Bo orm] E Fig 10a. Switching Time Test Circuit sO SN Rigg eee ania 6 10% fea ——} ! 1 | 1 1 1 1 i Pad Fig 10b. Switching Time Waveforms Tu rl ores: 4. DUTY FACTOR, D=ty/t2 2. PEAK TysPow % Zango. + Te 108 0.4 1 10 4h, Rectangular Pulse Duration (seconds) Fig 11, Maximum Effective Transient Thermal Impedance, Junction-to-Case 115IRFR9024, IRFU9024 L Vay iptoabnin Vos routed post, z Yoo = B 2 a ° 8 2 2 2 i a b—tp BVoss Fig 12b. Unclamped Inductive Waveforms. Charge — Fig 13a. Basic Gate Charge Waveform “cot Bs ae “9 Bs | o bee 1 rr a Starting Ty, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current (ges i ! | | ! hav. ! L ! ae four, EM Fajour. 7. Vos Vos Smal Uf * bb rer Samoing Raise Fig 13b. Gate Charge Test Circult Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix C: Tape & Reel Information Appendix D: Part Marking information 116 International 2R| Rectifierinternational 2R|Rectifier PD-9.519D IRFR9110 HEXFET® Power MOSFET + Surface Mount (IRFR9110) + Straight Lead (IRFU9110) + Repetitive Avalanche Rated + Dynamic dv/dt Rated + P-Channel Description Third Generation HEXFETs from Intemational Rectifier provide the designer IRFU9110 D BVpss_-100V : Rogion 1.20 Ip -3.4A p-channel with the best combination of fast switching speed, ruggedized device design, and low on resistance. The D-Pak is designed for surface mounting using vapor phase, infra red, or afl wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels upto 2watts | DPaK are possible in SMD applications. abba, Absolute Maximum Ratings Parameter Max. Units 1p @ Te = 25° _| Continuous Drain Curent, Vag@-10V : ip @ Te = 100°C | Continuous Drain Current, Vos@-10V 24 A Tow Pulsed Drain Current © a4 P>@ Te =25°C | Maximum Power Dissipation 230. Ww Linear Derating Factor 0.20 WKO Vas Gate-to-Source Breakdown Voltage 220 v Eas ‘Single Pulse Avalanche Energy ® 140. mu as ‘Avalanche Current © 3a A [Ean Repetitive Avalanche Energy © 2.0 md laviet Peak Diode Recovery dvidt © 55 Vins rt [Operating Junction and 5104175 [Tera Storage Temperature Range: “c Soldering Temperature, for 10 see. '300 (0,069 i, (1.6mm) from ease) Thermal Resistance Parameter Win Te. Max. [Unie ac Tanetionto-Case = = 50 Pcs Caseto-Sink © a7 =| Kwo aun ‘Junetionto-Ambient, Typical Socket Mount 110 7IRFR9110, IRFU9110 TOR ———— SE Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. [Ty Units Test Conditions BVoss__|Drain-to-Source Breakdown Vattage | -100 V_|Vas=0V, lpw-250uA ‘4BVps/aT, | Temp. Costfcient of Breakdown Voltage | —- [0.091 VPC [Reterence to 25°C, Io=-tmA Rosie) _|Statle Drain-to-Source On Resistance 2 [Vage-10V, Ip = 2.089 Vestn) | Gate Threshold Votage V_|Vos=Vas. l= 250uA, te Forward Transconductance S_[Vpse-50V, Ipg=-2.0A9, loss Zero Gate Voltage Collector Current HA [Vos=-100V, Vos 0V Vos=-80V, Vos=0V. Tyr 150°C Toss (Gate-to Source Forward Leakage na [Ves=20V [Gate-to-Source Reverse Leakage Vas=20V [oy Total Gate Charge = |= [87 Tp=-4.0A, Vog=-80V, [Oe Gate-1o-Source Charge = |= [22] ne |yice-tove [Opa Gate-to-Drain (Miller) Charge = |= [at os Turn-On Delay Time = [0 | Voow-50V, Ip-4.0A h. Rise Time 27 = ton Turn-Off Delay Time 15 aH eae u Fall Time. 7 ny Internal Drain Inductance | 45 [Between lead, /émm (0.25in.) to) ts internal Soures Inductance = [TEP =| [ea cererstaie MEY, | contact 4 on Input Capacitance == [200 Ves=0V, Vos=-25V Coxe ‘Output Capacitance = [94 pF | f=1.0Mhz ns Reverse Transfer Capacitance = pe | = Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions is ‘Continuous Source Current ~[—-]3e MoSRET Gail ° (ay Say , Mee low Pulsed Source Current = p= |e integral reverse (Body Diode) @ Pn junction diode, fe Vso Diode Forward Voltage 7 “55 |_V_[ 72250, ign-3.4A, Vege OVO te Reverse Recovery Time a 160 | ns _|Ty=25°O, Ip=-6.0A, on 39 Recovery Charge [0.075 0.30 | HC |di/dt-100A SO on Forward Turn-On Time ins trn-on time is nego (turn-on i dorinated by Lg + La) Notes: © Repetitive rating; Pulse wicth limited by @ Igo3.4A, d/Ghs-75A/us, VopSBVog¢. © Mounting surtace: ‘max. junction temperature T)s175°C Suggested Rg=240 flat, smooth, greased ® Voow-25V, Starting Ty-25°C, La20mH, __@ Pulse width < 300us; duty Cycle <2% = OK W= "CW Rige250, Peak Iase-3.48 For more information on the same die in a HD-1 package refer to IRFD9110. 118Intemational 2F|Rectifier HEXFET® Power MOSFET PD-9.520D, IRFR9120 IRFU9120 + Surface Mount (IRFR9120) 5 + Straight Lead (IRFU9024) BV, -100V * Repetitive Avalanche Rated oss + Dynamic dw/dt Rated a Rosqon) 0.62 + P-Channel Is Ip -6.3A ‘channel Description = Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. The D-Pak is designed for surface mounting using vapor phase, infra red, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 2 watts Desk ae ! -Pal are possible in SMD applications. TO2S1AA Absolute Maximum Ratings Parameter Max. Unite ip @ Te = 25°C _| Continuous Drain Currort, Veg@-10V 63) lp @ Tc = 100°C | Continuous Drain Current, Vgs@-10V_ 45 A iow Pulsed Drain Curent © 25 Po@ Te = 25°0 _| Maximum Power Dissipation 50 Ww Linear Derating Factor 0.33 WIkO_ ¥ Gate-to-Souree Breakdown Voliage 320 Vv E Single Pulse Avalanche Energy @ 270 md rs ‘Avalanche Current © 63) nN Ean Repetitive Avalanche Energy © 50 mi lovee Peak Diode Recovery dvidt © 55 Vins it ‘Operating Junction and “S510 +175 Tera Storage Temperature Rango “c ‘Soldering Temperature, for 10 sec [300 (0.083 in, (1.6mm) from case) Thermal Resistance Parameter Min, Te. Wax. [Unis axe Junaton-t-Case = 3.0 oc Caseto-Sirk 17 | Kw Pasa i Tntomal Souree Inductance = [7s] = | wt trompackage,, | 7 contact. as Gis Input Capacitance 390 Ves=0V, Vos=-25V Coxe [Output Capacitance 170 pF | fe1.0Mhz [Coss Reverse Transfer Capacitance = [45 [= [Soe Fig. 5 Source-Drain Diode Ratings and Characteristics Parameter Min. [ Typ. [ Max. | Units ‘Test Conditions is ‘Continuous Source Current ~ [| 33 ° (Body Diode) a [tong a Tow Pulsed Source Current = f= |e integral reverse (Body Diode) © Pn junction diode. fs Vso Diode Forward Voltage 63 | V_[Tp250, em 0 he Reverse Recovery Time 9 200 | as_|Ty=25°C, I |Qnn Reverse Recovery Charge 0.17 | — [066 | C |dicte-100AS en Forward Turn-On Time intinsic turn-on time Is reglgile (urn-on ie dominatod by Lg + Up) Notes: ‘© Repetitive rating; Pulse width limited by ‘max. junction temperature (See figure 11) ® Vop=-25V, Starting Ty=25°C, Lat1mH, Rig=250, Peak lag=-6.34 (See figure 12) 120 © koS-6.2A,cits-110A%is,VoosBVoss, Mounting sutace TyS175*C Suggested Rg~182 flat, smooth, greased @ Pulse width < 300us; duty Cycle <2% OKA = "CWTOR] IRFU9120, IRFR9120 q ga E 101] e z z g g 3 8 = s : 6 & a 109) * soo) hos Purse WoT ois pase wor Te = 25°C Te = 175°C 108 10 10° 108 Vos, Drain-to-Source Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, Te = 25°C To = 150°C 2 . Bes } | fj @ 0 g E é 2, & Se i 88. g ge z 22,,] * é Vos = -0¥ é 109} 20us PULSE WIDTH c edad = [————————E—E-_-_iNl BoB TOTEOTIO TEE Te0 -Ves, Gate-to-Source Voltage (volts) Ty, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 121IRFR9120, IRFU9120 TER 09 ee Cas SHORTED! 780 3 @ eo 5 = S 3 oii [aa I 1 3 i. SS g 3 CPN TH 3° | & ion t Cogs: 8 - | 5 é 4 - - ‘sol > i Pg | rl Thess $ For Test exncurT Commi Ssey * See FIGURE 13 ot —. ° 4 ose Po -Vps, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig5. Typical Capacitance Vs. Drain- Fig 6. Typical Gate Charge Vs. Gate- to-Source Voltage to-Source Voltage 103 Ess oveetrion ty Tees ance LiMiTED 8Y_Fgs (on) 109} Ip, Drain Current (Amps) -Isp, Reverse Drain Current (Amps) Terese 2 TH rGea7see i [SINGLE Fuse TH -Vsp, Source-to-Drain Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 122To, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 10 HMB BSE RPE onse Thermal Responce (Z asc) 10 108 10-4 109 10 TOR IRFU9120, IRFR9120 ro { |_| 50 tt Sy | gefttt ; a i é a t Fig 10a. Switching Time Test Circuit z, t f Ven St aoe) 5 t 10% 3 ryt 10 } iAl | 4 V/\I a 20% Swe esas c Fig 10b. Switching Time Waveforms NOTES: £, DUTY FACTOR, Onty/t 2. PEAK TypPou X Zena * To 0.4 1 10 1h, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 123IRFR9120, IRFU9120 TOR] L 00 Vayippetuin Vos) — at 2 ai) LY oo LProv, 4 Dre | soe Fig 12a. Unclamped Inductive Test Circuit — | Vos. \, 9 boa \ 2507S t#)SCaSStSOTS yy Starting Ty, Junction Temperature (°C) BVpss Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Eeonens [~~ "Same Type — =! pe Vos Smal UT c Zeman > ‘Charge — le bo ‘Curent SampingRsistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix C: Tape & Reel Information International Appendix D: Part Marking Information =| Rectifier 124Target Data Sheet PD-9.521C. internat tae IRFR9210 weRinecumer 0 A te HEXFET® Power MOSFET IRFU9210 + Surface Mount (IRFR9210) D — + Straight Lead (IRFU9210) f + Repetitive Avalanche Rated BVpss_-200V + Dynamic dv/dt Rated 6 Rosen) 3.02 + P-Channel Ip -2.0A Description pane Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. 8 ‘The D-Pak is designed for surface mounting using vapor phase, intra red, or ‘wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications, Power dissipation levels up to 2 watts | _O-Pak are possible in SMD applications. eee beak Absolute Maximum Ratings Parameter Max. Units Ip @ Te = 25°C _| Continuous Drain Current, Vos@-10V lp @ Te = 100°C | Continuous Drain Current, Vgs@-10V 3 A low Pulsed Drain Current © 1.0 Po@ Te = 25°C _| Maximum Power Dissipation 25. w Linear Derating Factor 0.20 WKO [Wes ‘Gate-to-Source Breakdown Voltage 320 v Eas ‘Single Pulse Avalanche Energy © 4 md aa ‘Avalanche Current © “2.0 A Ean Repetitive Avalanche Energy © 25 md idvict Peak Diode Recovery dvict @ “5.0 wins Ty (Operating Junction and “55 10 +150 [Tera ‘Storage Temperature Range °C ‘Soldering Temperature, for 10 sec. ‘300 (0.063 in. (1.6mm) trom case) Thermal Resistance Parameter Tye Max._| Unis [Reso Junction-1o-Case = 50 Roos Case-to-Sink © 1. = __] kw Fa -Junction-o-Ambient, Typical Socket Mount | = = 110 125IRFR9210, IRFU9210 TOR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. [Typ. [Max. | Units Test Conditions BVoss | Drainto-Source Breakdown Voltage =| = |_V_|Wese0V, lor 250KA [aBVogs/AT7 | Temp. Costfcient of Breakdown Voltage ila ference 10 25°C, Ip=-tmA Rosie, | Static Drain-to-Source On Resistance 3.0 | 8 [Vage-10V, bp =-1.20@ Vesey | Gate Threshold Votage V_[Vos=Vos. lp=-250uA, te Forward Transconductance S_[Vps=-50V, Ipge-1.2AD, oss Zero Gate Voltage Collector Current | — | — |-250| HA |Vosx-200V, VageOV Vos=-160V, Vas=OV.T)=125°C IGSS___| Gato-1o-Source Forward Leakage na [Vos=20V Gate-10-Source Reverse Leakage Ves=20V [So Total Gate Charge lpe-2.4A, Vos=-160V, [Qs [Gate-io-Source Charge nO | Yoge-t0V0 Qs [Gate-to-Drain (“Miler”) Charge ton) Tum-On Delay Time Vopr-100V, Ipe-24A a Rise Time ns |Rac240, Ro-42n® aon ‘Tumn-Off Delay Time % Fall Time af te Internal Drain Inductance 45 |= Belween oad, P JSmm (0.25in.) >| is Internal Source Induciance = [7s] = | ™ |ftom package, ‘J contact. Cae input Capacitance = | 160 [= Vos=0V, Vos=-25V Om ‘Output Capacitance = [50 pF | f=1.0Mnz Cras Reverse Transfer Capacitance 12 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. | Max. | Units “Test Conditions Is Continuous Source Current ~ | 20 2 > ak , hee Tow Pulsed Source Current = |= | 280 integral reverse (Body Diode) © P-n junction diode, fe Vso Diode Forward Volage = 58 | _V_[Tyna5e te Reverse Recovery Time Wa nia |_ns_|T)=25°O, le=2. Opa Reverse Recovery Charge nla | = | nla | BC |di/ct=-100AS® on Forward Turn-On Time nvinsc turn-on time is nogigo (turn-on le dominated by Ls + Lo) ited by @ IgpS-2.0A, dicts-20Ajs, VoosBVoss, © Mounting surtace: ‘max. junction temperature T)S150°C Suggested Rgw240. flat, smooth, greased ® Voos-50V, Starting Tya25°C, LatSmH, _@ Pulse wieth < 300us; duty Cycle <2% © © Ka "Cw Fge250, Peak lage-2.08 Target Data Sheet: Specification Pending; Contact Factory for Update —————— — ————————————eeeeeeER_ 126Target Data Sheet PD-9.522C International zeR| Rectifier IRFR9220 HEXFET® Power MOSFET IRFU9220 + Surface Mount (IRFR9220) 5 + Straight Lead (IRFU9220) BVpss -200V + Repetitive Avalanche Rated oss : Dynamic v/s Rated 2 Rogqon) 1.52 + P-Channel ie Ip -3.6A channel Description B ‘Third Generation HEXFETs from Intemational Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, intra red, or wave soldering techniques. The straight lead version (IRFU series) is for | > 5 through hole mounting applications. Power dissipation levels upto 2watts | 72.5. | pay are possible in SMD applications. bbe, Absolute Maximum Ratings Parameter Max. Units ip @ Te = 25°C _| Continuous Drain Current, Vas@-10V 36 lp @ Te = 100°C | Gontinuous Drain Current, Vas@-10V 23 A Tou Pulsed Drain Current © “14 Po@ Te = 25°0 _| Maximum Power Dissipation 2 Ww Linear Derating Factor 0.33) wWiKo Vas. ‘Gate-to-Source Breakdown Volage 220 v Eas Single Pulse Avalanche Energy @ 84 nd Tha ‘Avalanche Current © “36 A Eng Repetitive Avalanche Energy © 42 nd viet Peak Diode Recovery dvict “5.0 Vins) ty ‘Operating Junction and “55 to +150 [Tera Storage Temperature Range °c Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Tye. Max. | Unis ase Junetion-to-Case = 30 R Case-to-Sink © 17 —__| kwo Pasa Junetion-to-Ambient, Typical Socket Mount |___-— = 110 127IRFR9220, IRFU9220 TOR) ee Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. | Typ. [Max. | Units Test Conditions BVoss | Drainto-Souree Breakdown Vottage __|-200| — | — | V_|Vas-0V, lpe-250uA, |ABVpss/aT, | Temp. Costficient of Breakdown Voltage | — =| WrC |Reteronce to 25°C, Ip=-1mA Rosny | Static Drainto-Source On Resistance | — 15 [_|Vage-10V, bp =-2.2A0 Vesiny | Gate Threshold Votage 20 =40 | ~V_|Vos=Vos. Ip=-250uA le Forward Transconductance la = |S [Vpg=-50V, Ipge-2.209 loss [Zero Gate Voltage Collector Curent = “250 | WA |Vos=-200V, Vase0V = 1000) Vos=-160V, Vos~0V.Ty=125°C. NGS | Gate-to-Source Forward Leakage 500 |, [Vas=20V (Gate-1o-Source Reverse Leakage = [= [00 Vas=20V a. Total Gate Charge = 13 To=-40A, Vpg=160V, [Qe Gate-to-Source Charge = [24] 06 |Vece10v@ [Qs Gate-to-Drain (“Miller”) Charge 76, eon Turn-On Delay Time Voo=-100V, Ipe-4.0A a Rise Time 35 af tao Turn-Off Delay Time 15 gee (tetera u Fall Time 25 bo Internal Drain Inductance = [45 Between lead, ‘6mm (0.25in.) | ts Internal Source Inductance ef eresi (cea tren [eomeoaaee ca ‘a contact. 4 Cis Input Capactance = [3% [= Vos=0V, Vos=-25V Cons Output Capacitance 105 pF | fe1.OMnz ne Reverse Transfer Capacitance 2 [= Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. [Max. | Units Test Conditions is ‘Continuous Source Current ~ [36 Tani ° (800/ Dice) a | sowing ns Tow Pulsed Source Gurrent = [=p integral reverse (Body Diode) @ Pn junction dlode. 5 Veo Diode Forward Voltage = 63 | V_| T2500, ew-B.6A, Vas0VO he Reverse Recovery Time Wa iva [18 _|T)=25°C, Ip=-4.0A, |Qpa Reverse Recovery Charge nla nia | BC |dildte-100AuS® en Forward Turn-On Time nvneic tron tine is negligible (uen-on is dominated by Ls + Le) © Repatitive rating; Pulse width limited by @ igoS-3.6A, dildts-90AJus, VoosBVoss, © Mounting surface: ‘max. junction temperature T,<150°C Suggested Re=240d flat, smooth, greased ®Voo=-50V, Starting Ty=25°C, L=9.7mH, © Pulse width < 300us; duty Cycle <2% = OKW = °C Rg=250, Peak las=-3.6A, ‘Target Data Sheet: Specification Pending; Contact Factory for Update 128Intemational 2R|Rectifier PD-9.637B IRFRC20 HEXFET® Power MOSFET IRFUC20 + Surface Mount (IRFRC20) D + Straight Lead (IRFUC20) BV, 600V + Repetitive Avalanche Rated oss + Dynamic dvidt Rated 7 Rogqon) 4.4Q 7 Ip 2.0A oe n-channel Description ‘Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, infra red, or wave soldering techniques. The straight lead version (IRFU series) is for D-Pak through hole mounting applications. Power dissipation levels upto 2watts | O25. | pay are possible in SMD applications. Topeka Absolute Maximum Ratings Parameter Max. Unis ip @ Te = 25°C _| Continuous Drain Current, Vas@i0V. 20 lo @ To = 100°C | Continuous Drain Current, Vag@10V 13 A lo Pulsed Drain Current © 80 Po@ Te = 25°0 _| Maximum Power Dissipation 2 W Linear Derating Factor 0.39 70) Vas Gate-o-Souree Breakdown Voage 320 v [Ess Single Pulse Avalanche Energy @ 100 md ag ‘Avalanche Current © 20 A [Eva Repetive Avalanche Energy © 42 md lavct Peak Diode Recovery dvict © 30 Vine ia ‘Operating Junction and -55 to +150 Hara Storage Temperature Range *c ‘Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Tye. Max_[ Units Rove Junetion-1o-Case = 30 [Racs Caseto-Sink © 17, =| kw® Pau Junetion-1o-Ambient, Typical Socket Mount | __—= = 110) 129IRFRC20, IRFUC20 TOR] Electrical Characteristics @ Ty 25°C (unless otherwise specified) Parameter Min. [Typ. | Max. [ Units Test Condiions BVoss | Drain-to-Source Breakdown Votage | 600 | ~ | — | V_|Vas-OV, Ip-250A [4BVp5s/AT | Temp. Coefficient of Breakdown Voltage | — | 0.88 | — | Wir |[Reterence to 25°C, In-tmA Rosien) | Static Drain-o-Source On Resistance | — | ~ | 44 | & |Vosnt0V, Ip=t.2ad Vasiny | Gate Threshold Votage 20 | = | 40 | V_|Vos=Ves, lo=2501A ae Forward Transconductance 40 [= | — |S [Vpge100V, Ipget.20 oss [Zero Gate Voltage Collector Current ==] 250 | HA [Vos=600V, Vas-0V 1000 Vos=460V, VageOV.T 125% less (Gate-io-Souree Forward Leakage 500 |, [Vase20V Gate-to-Souree Reverse Leakage = [= [500 Vas=-20V [a Total Gate Charge = [=e ip=2.0A, Voo-480V, On Gate-to-Souree Charge = [= [a0] ac | Wetove [aa Gate-o-Drain (Miler) Charge = |= [es a Turn-On Delay Time = [ae [ Voo=200, lynZ.0A a Rise Time 23 | = | ag: |Rget80, Rp=15090 ean | Turn-Off Delay Time 20 | = w Fall Time 25 rr) Intemal Drain Inductance 45 Between fad, ; ‘6mm (0.25in} o| Ta | eral Sours advoanas Prep] ftom package, of contact, us| Gas input Capacitance = [380 | = Ves=0V, Vosn25V Cous (Output Capacitance 4 pF | fet.oMhz Crs Reverse Transfer Capackance 26 Source-Drain Diode Ratings and Characteristics Parameter Typ. | Max, | Units Test Condlions is Continvous Source Current ~ 20 > (Body Diode) : caing wet lsu Pulsed Source Current - [| 380 integral reverse (Body Diode) © -n Junction diode. f Veo Diode Forward Voltage: = [= [46 TV 85°6, ge 2.0A, Voge a Reverse Recovery Time 140 380 | _ns | Ty-25°C, l=22A, Onn Reverse Recovery Charge 034 [ -~ [13 | HC |dildta100Aps® en Forward Turn-On Time nine tron timo i nog (tron donnated by La + La) Not © Repetitive rating; Pulse width limited by @ Ign <2.0A, difdtsAOAIus, VogSBVogs, © Mounting surface: max, junction temperature T)s150°C Suggested Ro=t8. fla, smooth, greased ® Voo=50V, Starting Tyx25*C, L=49mH, @ Pulse wieth = 200us; duy Cycle <2% © O©KW= “CW Rege250, Peak Iagn2.0A 130zer|Rectifier PD-9.438C IRFS1Z0 HEXFET® Power MOSFET + Repetitive Avalanche Rated D + Dynamic dvidt Rated BV 400V + Surface Mount a 7 Rpgon) 2.4Q 7 Ip 0.90A 7 n-channel Description Third Generation HEXFETs from Intemational Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, ae and low on resistance. ‘The SOT-89 package is a sub-compact surface mount case style designed {for vapor phase, infra red, or wave soldering production processes. Power dissipation levels up to 2 watts are possible in SMD applications. SOT-89 Absolute Maximum Ratings Parameter Max. Units ip @ Te= 25°06 _| Continuous Drain Current, Vas@10V 0.90 lp @ Te = 100°C _| Continuous Drain Current, Vog@10V 0.64 A low Pulsed Drain Current © 36 Po@ Te = 25°C _| Maximum Power Dissipation 43 w Linear Derating Factor 0.28 wWiKO [Vas Gate-to-Source Breakdown Voltage 320 v [Eas ‘Single Pulse Avalanche Energy ® 98 md aa ‘Avalanche Current © 0.90 A Ean Repetitive Avalanche Energy © 0.49) md lévict Peak Diode Recovery dvict @ 55 Vins ty ‘Operating Junction and “SB to 4175 *C era ‘Storage Temperature Range asst 1 Thermal Resistance Parameter Typ. Max. [Units ase ‘Junction-1o-Case = 35 Pcs Case-to-Sink © 50. =| kwo 131IRFS1ZO TOR a a Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. [Typ. [Max. [ Units “Test Conditions BVoss__| Drain-io-Source Breakdown Votage | 100 | --- | — | V_|Vagn0V, Ipe250nA [aBVoss/aTy | Temp. Costficient of Breakdown Voltage oz VPC [Reference to 25°C, IpxtmA Rosie ___| Static Drain-to-Source On Resistance D[Vag=10V, Ip =0.54A Vostey | Gate Threshold Votage V_[VoseVos. bpe250uA Bre Forward Transconductance S$ [Vp¢=50V, Ing=0.54A9) loss Zero Gate Voltage Collector Current HA [Vos 100V, Vos=0V Vos=80V, Vase0V, Ty=150°C IGSS | Gate-to-Source Forward Leakage wa [Ves=20v Gate-o-Source Reverse Leakage Vas=-20V e Total Gate Charge ip=0.90A, Vpge80V, [Qs [Gato-to-Source Charge MC | Veget0VO [Os Gate-to-Drain (“Miler) Charge: aon) | Tutn-On Delay Time Voo=50V, Ip=0.90A a Riso Time tao Turn-Off Delay Time ee | eee t Fall Time. To Internal Drain Inductance Between lead, mm (0.25in.) to i internal Source Inductance = Pao] = | ™ |trom package, ‘a contact. On input Capacitance = [0 [= Vas=0V, Vose25V Coxe Output Capacitance = [18 |= | pF Cons Reverse Transfer Capacitance - [2a [= Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. [ Max. | Units ‘Test Conditions Is Continuous Source Current | 09 MOSFET symbol ° (Cody Dice) | snowing tho Isa Pulsed Source Gurrent = >= | se (Body Diode) © ls Diode Forward Voltage = 14 [Vv 5 Igs0.9A, Vag=0VO Reverse Recovery Time @ 71 | ns _|Typ25°C, Ipx0.9A, Reverse Recovery Charge, 0.14) 0.41 | HC | dildt-100ApS® Forward Turn-On Time Ininsic turn-on time is negligible (turn-on dominated by Lg + La) © Repetitive rating; Pulse wicth limited by @ Ig | Us Internal Source Inductance = [7s [=| % |tempackage, 7 contact is Cas input Capacitance 880 | = Vas=0V, Vose25v Coss (Output Capacitance 350 pF | fe1.0Mne Cres Reverse Transter Capacitance 54 Source-Drain Diode Ratings and Characteristics Parameter Min. | Typ. | Max. | Units ‘Test Gondiions is Continuous Source Current -~|-| 6 ° (Gody Diode) Be lanonmg ues se Pulsed Source Curcent =~ |= [es integral reverse (Body Diode) © Pn junction diode. f Vso Diode Forward Voliage = 15 | V_|[1-25°C, Ien16A, VaseOV@ te Reverse Recovery Time 70 140 [ns _|Ty=25°C, ip=t6A, ar Reverse Recovery Charge 0.19} ~ [078] KC |dildt-100AS® ton Forward Turn-On Time ntinsic Wn-on tine & noglgRo (Wuen-on fs dominated bj Ls va) Notes: © Ropeitve rating; Pulse wicth limited by @ gp 16A, dict<140A/us, VooSBVoss, _ @ Mounting surtace: max. junction temperature T,S175°C Suggested Rg=9.02 flat, smooth, greased ®Voo=25V, Starting Ty=25°C, L=450uH, @ Pulse width < 300us; duty Cycle <2% @Kiw="Cw Rig=250, Peak Ing=16A, For more information on the same die in a TO-220 package refer to IRLZ24. 144Intemational 2R|Rectifier PD-9.633 IRLR110 HEXFET® Power MOSFET IRLU110 + Surface Mount (IRLR110) 5 + Straight Lead (IRLU110) + Repetitive Avalanche Rated + Dynamic dv/dt Rated + Logic Level Gate ° Ss n-channel BVpss_100V Ros(on) 0.542 Ip 4.6A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching speed, ruggedized device design, and low on resistance. ‘The D-Pak is designed for surface mounting using vapor phase, wave soldering techniques. The straight lead version (IRFU s & fl through hole mounting applications. Power dissipation levels up to 2watts | .D-Pak ipa are possible in SMD applications, Te osAn: Absolute Maximum Ratings Parameter Max. Units ip @ Te = 25°C _| Continuous Drain Current, Ves@5V 46 ly @ Te = 100°C _| Continuous Drain Current, Vas@SV 33 A ow Pulsed Drain Current © 18 Po@ Te = 25°C _| Maximum Power Dissipation 30 Ww Linear Derating Factor 020 Wik, v ‘Gate-1o-Source Breakdown Volage 10 v Eas ‘Single Pulse Avalanche Energy @ 700 a a ‘Bvalanche Current © 46 q Ean Repetitive Avalanche Energy © 30 nd viet Peak Diode Recovery dvict 55 Vins ity [Operating Junction and S510 H175 sta ‘Storage Temperature Range cy ‘Soldering Temperature, for 10 sec. 200 (0,063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Tye | Max Units Rac Junetion-to-Case 5.0 Pcs ‘Case-to-Sink © =| Kwe [Rasa ‘Junetion-te-Ambiort, Typical Socket Mount 110 145IRLR110, IRLU110 TOR Electrical Characteristics @ Ty = 25°C (unless Stherwise specified) Parameter Min. | Typ. [Max. | Units Test Conditions: [BVoss | Drain-to-Source Breakdown Volage | 100 V_|Ves0V, Ip=250uA [ABVoss/AT, Temp. Coefficient of Breakdown Voltage | —~ | 0.12 VPC [Reference 10 25°C, pxtmA Rosen) | Static Drainto-Soures On Resistance |Vas"5.0V, Ip =2.7A@ Vas=4.0V, Ip =2.38D Veg [Gate Threshold Votage Vos=Vas, o=250uA Ste [Forward Transconductance Vas=50V, Ipse2.7AD loss Zero Gate Voltage Collector Current Vos=100V, Vese0V Vos=80V, Vase 0V,Ty=150°C IGSS__| Gato-to-Source Forward Leakage Ves=10V [Gate-1o-Source Reverse Leakage Ves=-10V, [Q, [Total Gate Charge a zi fen aot soore nage lp=5.6A, Vos#80V, Vas=5.0V0] Os [Gate-to-Drain (Miller) Charge tej FTum-On Delay Time = [9s Vope50V, Ip-5.6A I Rise Time = [47 ns [Rgct20, Rya84n@ ton Tum-Off Delay Time 16 % Fall Time 7 to Internal Drain inductance = [4s] [Between lead, ‘6mm (0.25in.) to ts Internal Source Inductance Ea er-5t| eel ere eopeatnae as ‘el contact. f om Input Capacitance = [250 Ves=0V, Vos=25v Cone [Output Capacitance 30 pF | fa1.0Mnz [Cree [Reverse Transfer Capactance 15 Source-Drain Diode Ratings and Characteristics Parameter Min. ["Typ. [Max. | Unis Test Conditions is Continuous Source Current ~ |) 46 ° (Gedy Diode) ie lahomegte tt, lou Pulsed Source Current =|[-[ integral reverse (ody Diode) © [Pn junction diode, is Veo Diode Forward Voltage =| = 2B VT 2501pna 6A, Vas te Rloverse Recovery Time 89 | = [130] ns _|Tyn28°C, len5.6A, on Reverse Recovery Charge 035[ = [065 | HO |e t0085S> tn Forward Turs-On Time intrinsic tron time ts nogigite (Wwrn-en e dominatod by Us + Lp) Notes: © Repetitive rating; Pulse width imited by @ Igp

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