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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2720DX

GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up
to 1700V.

QUICK REFERENCE DATA


SYMBOL

PARAMETER

CONDITIONS

VCESM

Collector-emitter voltage peak value

VBE = 0 V

VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts

Collector-emitter voltage (open base)


Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time

PINNING - SOT399
PIN

PIN CONFIGURATION

DESCRIPTION

base

collector

emitter

Ths 25 C
IC = 5.5 A; IB = 1.38 A
f = 16 kHz
ICsat = 5.5 A; f = 16kHz

case isolated

TYP.

MAX.

UNIT

1700

5.5
7.4

825
10
25
45
1.0
8.5

V
A
A
W
V
A
s

SYMBOL

case

b
Rbe

1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

VCESM

Collector-emitter voltage peak value

VBE = 0 V

VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj

Collector-emitter voltage (open base)


Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature

average over any 20 ms period


Ths 25 C

MIN.

MAX.

UNIT

1700

-65
-

825
10
25
10
14
150
6
45
150
150

V
A
A
A
A
mA
A
W
C
C

MIN.

MAX.

UNIT

10

kV

ESD LIMITING VALUES


SYMBOL

PARAMETER

CONDITIONS

VC

Electrostatic discharge capacitor voltage Human body model (250 pF,


1.5 k)

1 Turn-off current.

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2720DX

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

without heatsink compound

Rth j-hs

Junction to heatsink

with heatsink compound

Rth j-a

Junction to ambient

in free air

TYP.

MAX.

UNIT

3.7

K/W

2.8

K/W

35

K/W

TYP.

MAX.

UNIT

2500

ISOLATION LIMITING VALUE & CHARACTERISTIC


Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Visol

Repetitive peak voltage from all


three terminals to external
heatsink

R.H. 65 % ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz


heatsink

MIN.
-

22

pF

MIN.

TYP.

MAX.

UNIT

1.0
2.0

mA
mA

7.5

13.5
65
1.6
19

1.0
1.0

V
V
V

5.5

7.5

TYP.

MAX.

UNIT

7.4
0.7

8.5
0.9

s
s

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS
2

ICES
ICES

Collector cut-off current

BVEBO
RBE
VCEsat
VBEsat
VF
hFE

Emitter-base breakdown voltage


Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
DC current gain

VBE = 0 V; VCE = VCESMmax


VBE = 0 V; VCE = VCESMmax;
Tj = 125 C
IB = 600 mA
VEB = 6 V
IC = 5.5 A; IB = 1.38 A
IC = 5.5 A; IB = 1.38 A
IF = 5.5 A
IC = 1 A; VCE = 5 V
IC = 5.5 A; VCE = 1 V

hFE

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

ts
tf

PARAMETER

CONDITIONS

Switching times (16 kHz line


deflection circuit)

ICsat = 5.5 A; LC = 750 H;


Cfb = 15.5 nF; VCC = 125 V;
IB(end) = 1.2 A; LB = 6 H; -VBB = 4 V;
-IBM = ICM/2

Turn-off storage time


Turn-off fall time

2 Measured with half sine-wave voltage (curve tracer).

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

ICsat

TRANSISTOR
IC

BU2720DX

+ 150 v nominal
adjust for ICsat

DIODE
t

Lc
IBend

IB

t
20us

D.U.T.

26us

LB

IBend

Cfb

64us
VCE

-VBB

Rbe

Fig.1. Switching times waveforms.

Fig.3. Switching times test circuit.

ICsat

hFE

BU2720/22DF

100

90 %

VCE = 5 V

Ths = 25 C
Ths = 85 C

IC

10 %
tf

10

ts
IB
IBend

t
1
0.01

- IBM

Fig.2. Switching times definitions.

September 1997

0.1

10

IC / A

100

Fig.4. DC current gain. hFE = f (IC)


Parameter Ths
(Low and high gain)

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

hFE

BU2720DX

BU2720/22DF

PTOT / W

100

BU2720DF

100
VCE = 1 V

Ths = 25 C
Ths = 85 C

IC = 4.5 A
f = 16 kHz
Ths = 85 C

10

10

1
0.01

0.1

10

IC / A

100

Fig.5. DC current gain. hFE = f (IC)


Parameter Ths
(Low and high gain)

VCEsat / V

0.5

1.5

IB / A

Fig.8. Limit Ptot; Ths = 85C


Ptot = f (IB(end)); IC = 4.5 A; f = 16 kHz

BU2720DF

PTOT / W

10

BU2720DF

100
Ths = 85 C
Ths = 25 C

IC = 5.5 A
f = 16 kHz
Ths = 85 C

IC/IB = 8

10
IC/IB = 4

0.1

0.01
0.1

10

IC / A

1
0.5

100

Fig.6. Typical collector-emitter saturation voltage.


VCEsat = f (IC); parameter IC/IB

VBEsat / V

1.5

IB / A

2.5

Fig.9. Limit Ptot; Ths = 85C


Ptot = f (IB(end)); IC = 5.5 A; f = 16 kHz

BU2720DF

ts/tf / us

BU2720AF

12
Ths = 85 C
Ths = 25 C

IC = 5.5 A

10

0.9

8
0.8

6
4.5 A

IC = 4.5 A
4

IC = 5.5 A

0.7

2
0.6

0.5

1.5

IB / A

0
0.5

Fig.7. Typical base-emitter saturation voltage.


VBEsat = f (IB); parameter IC

September 1997

1.5

IB / A

2.5

Fig.10. Limit storage and fall time.


ts = f (IB); tf = f (IB); parameter IC; Ths = 85C; f = 16 kHz

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

Normalised Power Derating

PD%

120

BU2720DX

VCC

with heatsink compound

110
100
90
80
70

LC

60
50

VCL

IBend

40

LB

30
20

CFB

T.U.T.

-VBB

10
0
0

20

40

60

80
Ths / C

100

120

140

Fig.13. Test Circuit RBSOA. VCC = 150 V;


-VBB = 1 - 4 V;
LC = 1 mH; VCL = 1500 V; LB = 1 - 3 H;
CFB = 1 - 4 nF; IB(end) = 1.2 - 4 A

Fig.11. Normalised power dissipation.


PD% = 100PD/PD 25C = f (Ths)

10

0.1

Zth / (K/W)

IC / A
26
24
22
20
18
16
14
12
10
8
6
4
2
0
100

0.5
0.2
0.1
0.05
0.02
PD

0.01
D=0
0.001
1E-06

tp

D=

1E-04

1E-02
t/s

tp
T

1E+00

Area where
fails occur

1000

1700

VCE / V

Fig.14. Reverse bias safe operating area. Tj Tjmax

Fig.12. Transient thermal impedance.


Zth j-hs = f(t); parameter D = tp/T

September 1997

BU2720AF/DF

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2720DX

MECHANICAL DATA
Dimensions in mm

5.8 max

16.0 max

Net Mass: 5.88 g

3.0

0.7
4.5
3.3

10.0
27
max

25
25.1
25.7

22.5
max
5.1
2.2 max
18.1
min

4.5
1.1
0.4 M
2
0.95 max
5.45

5.45

3.3

Fig.15. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2720DX

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997

Rev 1.300