1.

Potentialenergyofanorbitingelectronisalways

negative.Itcanneverbepositive.
2. Valancebandinasolidcannotbeempty.
3. Conductionbandlieabovethevalanceband.
4. The neighboring atoms in a crystalline lattice
structureofasemiconductorlikeGeformcovalent
bond.
5. Intrinsic semiconductors are those which are
madeofthematerialinitspurestform.
6. For converting intrinsic semiconductor into N
typeextrinsic,apentavalentimpurityisaddedlike
Phosphorous, Arsenic, Antimony (Sb), and
Bismuth. While for Ptype extrinsic a trivalent
impuritylikeB,Al,Ga,andIndiumetc.isadded.
7. In Ntype electron are majority & holes are
minority carriers while vice versa in Ptype
semiconductors.
8. Number of electrons and holes are same in
intrinsic semiconductor but bot in extrinsic
semiconductor.

9. Both in Ntype and Ptype semiconductor

materialasawholeiselectricallyneutral.
10. Extrinsicsemiconductorsarewidelyusedbecause
it shows wide ranging characteristics depending
uponnatureandamountofimpurity.
11. Three most commonly used semiconductor
material are Ge, Si, GaAs. Transferredelectron
bulkeffectoccursingalliumarsenide.
12. GaAshashighestforbiddenenergygap.InGeits
valueis0.67ev.
13. Theprocessofaddingimpuritytosemiconductor
inacontrolledamountiscalleddoping.
14. NN junction and PP junction are regions
betweentworegionshavingdifferentpropertiesin
Ntype & PType semiconductor material
respectively.
15. In forward biased condition the potential of P
sidewithrespecttoNsideispositive.
16. In semiconductor diode relation of current is
exponentialwithvoltage.

17. CutinvoltageinsiliconandGEis0.6&0.2
18. The maximum voltage a diode can withstand in

reversebiasediscalledpeakinversevoltage.
19. The DC & AC opposition to the current flow in a
diode is called static & dynamic resistance
respectively.
20. When emitter junction is forward biased &
collector junction is reverse biased then
semiconductortransistoroperatesinactiveregion.
21. A zenor diode which generally operates in
reversebiasedmodeisusedtomaintainconstant
outputvoltageinapowersupply.
22. Theimportantspecificationsofazenordiodeare:
breakdown voltage, dynamic impedance and
powerdissipation.
23. When current through zenor diode increase by
somefactor,thevoltageremainsunaltered.
24. The dynamic impedance of a zenor diode
decreasewithincreaseincurrentthroughit.

25. When zenor diode are connected in series the

voltagesimplyadd.
26. The breakdown that occur in reverse biased
condition in narrow junction diode is called zenor
breakdown while in wider junction diode, it is
calledavalanchebreakdown.
27. Variationinbreakdownvoltagewithtemperature
is called temperature coefficient of a breakdown
diode. It is positive in zenor while negative in
avalanchediode.
28. Symbol.Representsazenordiode.
29. Some common name of diodes are: varactor,
Gunn, Tunnel, RIMPATT, IMPATT, backwardm ,
Schottkybarrier,LSA,CrystelandPINdiode.
30. TRAPATThashigherefficiencythanIMPATT.
31. Diode used at microwave frequencies are
schottky, barrier, crystal and backward while PIN
diodeisnotused.

32. The diode not suitable for low power osscilation

are Gunn, IMPATT and LSA while Tunnel diode is

suitable.
33. The diode which donot produce highest pulse
power are varacor, Gunn and schottky barrier
whileRIMPATTproduces.
34. Performances of the following diodes are based
on their negative resistance characteristic: Gunn,
IMPATT and Tunnel while in backward diode it is
notbasedonthis.
35. Like zenor avalanche diode also operate in
reverse biased mode so current is because of
minoritycarriers.
36. Twodiodeshavingrating6.2V&24Varezenor
and avalanche diodes (variation in voltage
possible).
37. The electrons present in outermost orbit are
calledvalanceelectrons.
38. The number of proton in an atom is called its
atomicnumber.

39. Electrons and holes are equal in germanium.

Adding small amount of antimony will produce

moreelectrons.
40. An ordinary PN junction diode with higher
impurity concentration in P and N region is called
tunneldiode,sodepletionwidthdecreases.Ithas
a neagative resistance region and it fabricate
eitherfromGEorGaAs.
41. Anexampleofpassivecomponentiscapacitor.
42. Intrinsic type, extrinsic type, Ptype & Ntype
semiconductors are electrically uncharged or
neutral.
43. In PN junction, the region containing
uncompensated acceptor and donor ions is called
depletionregion.
44. APNjunctiononlyconductsinforwarddirection.
45. In reverse biased PN junction, the current
through the junction increases abruptly at
breakdownvoltage.
46. TheVIplotofsiliconandGEis:

47. PlotbetweenVIforidealdiodeis:
48. Maximumrectificationefficiencyforhalfwave&

fullwaverectifieris40.6%&81.2%.
49. FigureforLED&Tunneldiodeare:
50. Barrier potential decreases in forward biased &
increasesinreversebiasedcondition.
51. All valance electrons tend to remain in valance
band as the temperature of semiconductor is
reducedtoabsolutezero.
52. Theenergygapisoftheorderof515evincase
ofinsulators.
53. Barrierpotentialforsilicondiodeis0.7V.Itis0.3
VforGE.
54. Holesandelectronsmoveawayfromjunctionin
reversebiasedcondition.
55. Whenanorbitingelectroniscompletelyremoved
fromanatom,itissaidtobeionized.
56. Silicon is Z=14, its outer shell is half filled and
electronicdistributionis2,8,4.

57. Maximum number of electron in valance shell

andMshellare8and18respectively.
58. Semiconductormaterialshavecovalentbonds.
59. Majorpartofcurrentinintrinsicsemiconductoris
duetoconductionbandelectrons.Theconduction
band electrons have more mobility than holes
becausetheyneedlessenergytomove.
60. Doping materials alter the crystal structures of
thepuresemiconductor,socalledimpurity.
61. Currentflowinasemiconductordependsonthe
phenomenonofdrift,diffusionandrecombination.
62. The process of adding impurity to pure
semiconductorsiscalleddoping.
63. Most widely used semiconducting material in
electronicdevicesissilicon.
64. Electronhole pairs are produced by thermal
energy.
65. When an electron falls into a hole then
recombinationtakesplace.

66. When a PN junction is formed, then barrier

potentialisformedbecauseofdiffusioncurrent.
67. The leakage current of a PN diode is caused by
heatenergy.
68. Electronic components which are made of a
semiconductormaterialareoftencalledsolidstate
devices.
69. Any voltage that is connected across a PN
junction is called bias voltage. It is DC voltage to
controloperation.
70. Theareawithinasemiconductordiodewhereno
mobilecurrentcarrierexist(becausetheymigrate)
iscalleddepletionregion.
71. In forward biased an external voltage is applied
whichispositiveatanodeorPregionandnegative
at cathode or Nregion. So it conduct current. In
silicon it should be more than 0.7V. It appear like
ONswitch.
72. Reverse current in silicon junction nearly double
forevery riseintemperature.

73. Fu
unctio
onof clamperisstointrod
duce DCleevelin
nto

AC signaalwith
hout DCso
ourceeclipp
peracctas rectiffier
(claamperhas1,clip
pperhas22diod
des).

74. V1a
andV
V2aree6and5.4V.
75. A semico
onductor has negative temp
peratu
ure

co
oefficiientw
whenheateed,reesistanceggodow
wn.
76. The resisstivity
y of pure
p
G
GE an
nd Si are 6
60 ohm
cm
mand
d6000
0ohm
mcm..
77. The stren
ngtho
ofaseemico
onducctorccrystaalcom
mes
fro
omellectro
onpairbon
nds.
78. Imp
purity leveel in extrinsic semiccondu
uctor is
ab
bout1
1atom
mineevery atom
m.
79. Currrentccondu
uction
ninseemico
onducctorissdue
eto
ho
olesaandfreeeleectrons.
80. The ran
ndom mo
otion of holes an
nd frree
electro
ons due
d
to
t th
hermaal aggitatio
on iss called
diffusio
on.

81. Inforwardbiasedresistanceisoftheorderof

whileitisoftheorderofM in reverse biased.

82. In reverse biased P-N junction, there is almost
no current.
83. A P-N junction acts like unidirectional switch.
84. Leakage current across a P-N junction is due to
minority carriers (of the order of A).
85. In extrinsic semiconductor the effect of
temperature rise is pronounced on minority

carriers. After critical temperature ( Si=

and

GE =
it becomes intrinsic semiconductor
because broken hole-electron become equal.
86. At room temperature an intrinsic silicon crystal
acts like an insulator.
87. Base region in N-P-N transistor is of boron.
.
1. Field Effect Transistors (FETs) are smaller
than BJTs. Manufacturing process is simple. MOS
technology is used so they are called MOSFET.
2. InNchannelMOSFETPtypesubstrateisused.
It has two Ntype regions which are heavily

doped,oneiscalledsource,otheriscalleddrain
region. voltageisappliedbetweendrainand
source.
3. Path between drain and source has high
resistanceofthevalueof .
4. In MOSFET three different operating states are
cutoff, triode, and saturation.
5. MOSFET would be in cutoff state if voltage
applied on gate is less than threshold voltage.
6. Threshold voltage is controlled during
fabrication process (0.5-1.0 V).
7. On gate an insulator used to cover Ptype
substrate is
. Then metal is deposited on
oxidelayertoformgateelectrodeofthedevice.
8. Ptype substrate between drain and source is
calledbodyofFET.
9. When voltage above threshold is applied at
gate terminal then carrier depletion channel is
formed between drain and source. If voltage is

applied between drain and source then current

flowthroughinducedNregion(nchannel).
10. TheFEToperatesonmajoritycarrieronly.
11. MOSFET operates both in depletion and
enhancementmodes.
12. An Nchannel depletion mode MOSFET is
normally ON device requiring negative gate
voltagetoturnitOFF.
13. In FET common source has high input &
outputresistance.
14. In FET common gate has low input & high
outputresistance.
15. In FET common drain has high input & low
outputresistance.
16. Input resistance of FET is not lower as
comparedtobipolar.
17. Grounding rings are used with MOSFETs in
order to avoid any stray or static voltage of the
gatewhichmaydestroy
layer.

18. The input gate current of a FET is negligibly

small.
19. FET has very high input impedance but not
morethanCCBJT.
20. For enhancement only Nchannel MOSFET,
polarityof ispositive.
21. Thebestelectronicdeviceforfastswitchingis
MOSFET.
22. FETs have similar proportions to NPN
transistors.
23. AMOSFETusestheelectricfieldofacapacitor
tocontrolthechannelcurrent.
24. In FET, there are two PN junctions at the
sides.
25. Thermal runaway is not possible in FET
because as the temperature of FET increase, the
mobilitydecreases.
26. The threshold voltage of an nchannel
MOSFETcanbeincreasebyreducingthechannel
length.

27. The MOSFET switch in its onstate may be

considerequivalenttocapacitor.
28. A switched mode power supply operating at
30 kHz to 100 kHz range uses MOSFET as the
mainswitchingelement.
29. ThechargecarriersinpchannelFETareholes
only,whileinnchannelelectronsonly.
30. MOSFETisaffectedbystaticelectricity.
31. Four diode bridge has lower peak inverse
requirement as compare to full wave rectifier
usingtwodiodes.
32. FET depends on the variation of the reverse
voltageforitsoperation.

1. Zenor diode has characteristics close to an

ideal voltage source while transistor in CB mode
isclosetoidealcurrentsource.
2. Gallium phosphide finds applications in light
emittingdiodewhileGalliumarsenideisusedfor
infraredLEDs.

LEDs normally work on voltage of 12V with

powerconsumptionof510mA.Itdonotrequire
heatingorwarmuptime.
4. A tunnel diode is used for microwave
frequencies. Varactor uses two junction of
oppositepolarity.
5. If isnoloadvoltage& isloadvoltagethen
regulationis:( )100.
6. If no load voltage is 52V and full load voltage is
50Vthen%agevoltageregulationis4%.
7. Excessive hum in power supply could be due to
capacitor.
8. The ideal characteristics of a stabilizer are
constant output voltage and low internal
resistance.
9. Silicondiodeislesssuitedforlowvoltagerectifier
operationbecauseitsbreakdownvoltageishigh.
10. As compared to full wave rectifier using two
diode, the four diode bridge rectifier has the
3.

dominantadvantageoflowerpeakinversevoltage
requirement.
11. Silicon diode are used in rectifier circuit more
abundantly because they can withstand higher
temperaturethanGE,CostmuchlessthanGE,and
turnoffisnearlydoublethanGE.
12. Acrystaldiodeisusedasrectifier.
13. InLEDlightisemittedbecauserecombinationof
chargetakesplace.
14. SCRisanactivedevice.
15. In semiconductor diode barrier offers opposition
tomajoritycarriersinbothregions.
16. The current in reverse bias, in a PN junction
diodemaybefewmicroorNanoamperes.
17. TheefficiencyofFullwaveisdoubleofHalfwave
rectifierbecauseitutilizesbothhalfcycleofinput.
18. The output of halfwave rectifier is suitable only
forrunningACmotors.
19. The primary function of a rectifier filter is to
removeripplesfromtherectifiedoutput.

20. InLCfilter,theripplefactorremainconstantwith

theloadcurrent.
21. In DC power supply a bleeder resistor is used to
improveregulationandfilteringaction.
22. RegulatorofDCpowersupplyuseZenorasmain
component.
23. IfinbridgerectifierACsourceisconnectedtoDC
terminals,thenallourdiodeswillburnout.
24. In an inverting type switching regulators, output
voltageisoppositetoinputvoltage.
25. A crystal diode has one PN junction and its
forwardresistanceisoftheorderof.Itisusedas
a rectifier in forward biased. Its DC resistance is
less than AC resistance. Its leakage current, which
is due to minority carriers, will increase with
temperature.Itisanonlineardevice.
26. If doping level is increased then width of
depletionregionincreases.
27. Zenor diode has one PN junction but doping
levelinZenorismorethancrystaldiode.

28. In the breakdown region Zenor behave like a

constantvoltagesource.
29. AZenordiodeisdestroyedifitcarriesmorethan
ratedcurrent,soaseriesresistanceisconnectedto
protecttheZenor.
30. Zenor diode which is a nonlinear device has
sharpbreakdownvoltage.
31. Solidstate rectifier has the lowest forward
resistance.
32. Main AC power is converted into DC power for
usinginelectronicequipment.
33. Outputofhalfwaverectifierisdifficulttofilter.
34. A 10V power supply would use electrolytic
capacitor as filter while 1000V supply would use
papercapacitorasfiltercapacitor.
35. The choke input filter circuit results in the best
voltageregulation.
36. Most widely used rectifier is fullwave bridge
rectifier.
37. Aphotodiodeisnormallyreversebiased.

38. Varactor which is usually reverse biased is

associatedwithvoltagecontrolledcapacitor.
39. Todisplay0in7segmentdisplayonlygsegment
shouldbeoff.
40. In an unregulated power supply if input AC
voltageincreases,theoutputvoltagedecreases.
41. Ifvoltageregulationis10%thenitisunregulated
powersupply.
42. Zenor diode can be used for both AC & DC
voltageregulators(inshunt).
43. Increasing junction temperature, voltage
breakdownpointforZenorandavalanchedecrease
andincreaserespectively.
44. Zenordiode,whicharegenerallymadeofsilicon,
hasothernamecalledbreakdowndiode.
45. ForincreasingvoltageratingtheZenordiodeare
connectedinseries.
46. In Zenor voltage regulator, the change in load
currentproducechangesinZenorcurrent.

47. A Zenor voltage regulator is used for very high

load current. It will cease to act as a voltage

regulatorifZenorcurrentbecomeszero.
48. If doping level is increased, the breakdown
voltageoftheZenorisdecreased.
49. A30VZenorwillhavedepletionlayerwidthmore
thanthatof10VZenor.
50. ThecurrentinZenordiodeislimitedbyexternal
resistance&powerdissipation.
51. When load current is zero, the Zenor current is
maximumandviceversa.
52. AnSCRhasfourlayersandthreePNjunctions.It
has three terminals: (i) Cathode, (ii) Anode, (iii)
Gate. It behaves as unidirectional switch. It is
sometimescalledthyristor.Thecontrolelementis
Gate which is positive w.r.t. cathode in normal
operation.Itcombinesthefeatureofrectifierand
transistor.
53. AnSCRisacurrenttriggereddevice,sototurnon
innormalwayappropriategatecurrentisapplied.

Toturnoffanodecurrentisreducedtozero.Only
smallleakagecurrentflowinoffcondition.
54. WecancontrolACpowerinaloadbyconnecting
twoSCRsinparallelcombination.
55. When SCR starts conducting, then gate loses all
control.

1. IncaseofforwardbiasedPNPtransistor:base&
collector are negative w.r.t. emitter, collector is
morenegativew.r.t.base.
2. In case of forward biased NPN transistor:
collector & base are positive w.r.t. Emitter,
Collectorismorepositivew.r.t.Base.
3. In bipolar transistor (PNP & NPN) emitter is
heavily doped and have low resistivity, base is
lightlydopedandhavehighresistivityandcollector
hashighresistivitythanemitter.
4. Current amplification factor and common
emitter forward amplification factor are / &
/ where=/(+1).

5. A small change in base current produce a large

change in collector current so is high as

comparedto.
6. Innormaloperationoftransistorcollectorbaseis
reverse biased while emitterbase is forward
biased.Somostoftheelectronsofemitterpassto
collector.
7. A PNP transistor has two Pregions and one N
region.ItisviceversainNPN.
8. CEtransistorhashighvoltage&currentgainand

output is
phase shift w.r.t. input. Its input
impedanceishigh.
9. When CE transistor is in cutoff then maximum
voltage appear across the collector and when
= / ,thenitissaidtobeinsaturation.
10. When thentransistorisinactiveregion.
11. When =0thentransistorisinsaturationmode.
12. When = thentransistorisincutoffstate.
Inthiscase =0& =0.

13. Biasing of transistor is necessary to fix the value

ofcurrentamplification.
14. Maximum current pass through emitter so
maximum power is dissipated in emitter that is
whyitisdopedheavily.
15. = is the approximation often used in
electroniccircuits.
16. WhenatransistorisfullyswitchedONitissaidto
besaturated.
17. If a change in base current does not change the
collectorcurrent,thetransistoramplifierissaidto
besaturated.
18. InBJTthelargestcurrentflowoccurinemitter.
19. In properly connected BJT, an increase in base
currentcauseincreaseinboth & .
20. EarlyeffectinBJTreferstobasenarrowing.
21. The positive swing of the output signal in a
transistor start clipping first when Qpoint of the
circuit moves towards the cutoff point( Negative
swingforsaturationpoint).

22. IncaseofBJTamplifier,biasstabilityisachieved

bykeepingthebasecurrentconstant.
23. Improper biasing of a transistor circuit leads to
distortioninoutputsignal.
24. WhenBJTisemployedasanamplifier,itoperates
intheactiveregion.
25. Voltagedividerbiasisindependentof.
26. Anidealamplifieristheonewhichrespondsonly
tosignalsatitsinputterminal.
27. The number of depletion layers in a transistor is
two.
28. Collector has the biggest size and base is lightly
doped.Collectorismoderatelydoped.
29. Atransistorisacurrentoperateddevice.
30. In an NPN transistor holes are the minority
carriers.
31. Valueofinatransistorislessthanone.
32. Inputimpedanceoftransistorislow& = +
33. Output impedance of transistor is high &
generally20<<500.

34. InputimpedanceishighinCC,outputimpedance

is high in CB while most commonly used

arrangementisCE.
35. Phase difference between input & output in CC,
CEandCBarezero,180degreeandzero.
36. VoltagegaininCC&CEislessthanone&highest
respectively.
37. Power gain of a transistor is highest in CE
arrangement.
38. Arrowinthesymbolofatransistorindicatesthe
directionofholescurrentintheemitter.
39. TheleakagecurrentinCEismorethanthatinCB
arrangement.
40. A heat sink is generally used with a transistor to
preventexcessivetemperaturerise.
41. Transistor biasing represents DC conditions so
biasingisdonetokeepproperdirectcurrent.
42. If biasing is not done, it results in unfaithful
amplification.

43. Forfaithfulamplification,thevalueof should

notfallbelow0.7Vforsilicontransistor.
44. For proper operation collector should have
proper reverse bias and for faithful amplification
shouldnotfallbelow1Vforsilicontransistor.
45. The point of intersection of DC & AC load lines
representsoperatingpoint,alsocalledQpoint.
46. The disadvantage of base resistor method of
transistorbiasingisthat,itissensitivetochangein
.
47. Theoperatingpointisalsocalledquiescentpoint.
ItshouldbelocatedatmiddleofDCloadline.
48. Thedisadvantageofvoltagedividerbiasisthat,it
hasmanyresistors.
49. Thepurposeofresistanceintheemittercircuitof
a transistor amplifier is to limit the change in
emittercurrent.
50. Intransistoramplifiercircuit = + .
51. For faithful amplification should not fall
below0.7VinGEtransistor.

52. In base resistor method if changes by 50 then

collectorcurrentalsochangesbyafactorof50too.
53. In the design of a biasing circuit, the value of
collector load
is determined by

consideration.
54. If temperature increase then value of
decrease.
55. isalmostindependentof .
56. Since collectorbase is reverse biased, so it
collects electrons from base in case of NPN and
holes from base in case of PNP transistor
(minority).
57. In NPN transistor, the function of emitter is to
emitorinjectelectronintothebase.
58. TheFETisunipolarwhilejunctiontransistorsare
bipolar.
59. Fortransistoraction,itisnecessarythatthebase
regionmustbeverynarrow.
60. Aquiescentstateofatransistorimpliesthatthe
transistorpindenotescollector.

61. In a tra
ansisttor syymbo
ol, if sslant line

arro
owhe
eadissdraw
wnto
oward
dthe bar,
thenitissPNPtranssistor.
62. Re
esistanceaacrosssemittterb
base&
&bassecollectoris
neaarlyeq
qual.
63. Re
esistanceaacrosssemittterb
base&
&bassecollectoris
neaarlyeq
qual.
64. Em
mitterrbase
ejuncction isforrward
dbiassedfo
oractive
opeerationforbothPNP&NP
PNtraansistors.
65. If emittter &
& colleector junctions are both reverse
biassed, then
t
transistor workks as open
n swittch. Itt is
likeclose
eswittchwhenb
bothaarefo
orwardbiased.
66. CE
E is the only
o
circu
uit which has voltaage and
a
currrentggainshigheerthaanuniity.
67. Cu
urrenttgain
nisth
helow
west inCB
Btran
nsistor.Wh
hile
volttageggainissthelowestinC
CCtraansisttor.
68. InCBconfiguratio
oninp
putim
mpedanceistheelowest
and
doutp
putim
mpedaanceiistheehighest.
69. If for npn
n
transsistorr = 0.77V & = 0.2
2V,
thenitissoperratingginno
ormalactivvemo
ode.

70. If base width is increased then of a bipolar

transistorreduces.
71. Early effect is because of reverse bias of base
collector.