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General Description
Applications
DC/DC converters
Branding Dash
5
1
2
SO-8
www.fairchildsemi.com
December 2008
Symbol
VDSS
Parameter
Ratings
30
Units
V
VGS
20
10.2
9.3
Pulsed
80
57
mJ
Power dissipation
2.5
20
mW/oC
Drain Current
ID
EAS
PD
TJ, TSTG
-55 to 150
Thermal Characteristics
RJC
25
oC/W
RJA
50
oC/W
RJA
125
C/W
Device
FDS8878
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
Parameter
Test Conditions
Min
Typ
Max
Units
30
-
250
100
nA
Off Characteristics
BVDSS
IDSS
IGSS
ID = 250A, VGS = 0V
VDS = 24V
VGS = 0V
TJ = 150oC
VGS = 20V
On Characteristics
VGS(TH)
rDS(on)
1.2
2.5
11.0
14.0
13.8
17.0
17.5
22.7
897
pF
190
pF
111
pF
0.7
2.9
5.0
17
26
nC
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
RG
Gate Resistance
Qg(TOT)
VGS = 0V to 10V
Qg(5)
VGS = 0V to 5V
Qg(TH)
VGS = 0V to 1V
Qgs
Qgs2
Qgd
VDD = 15V
ID = 10.2A
Ig = 1.0mA
14
nC
0.9
1.4
nC
2.5
nC
1.7
nC
3.3
nC
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tON
Turn-On Time
54
ns
td(ON)
ns
tr
Rise Time
29
ns
td(OFF)
45
ns
tf
Fall Time
18
ns
tOFF
Turn-Off Time
94
ns
ISD = 10.2A
1.25
ISD = 2.1A
1.0
trr
19
ns
QRR
9.5
nC
Notes:
1: Starting TJ = 25C, L = 1mH, IAS = 10.7A, VDD = 30V, VGS = 10V.
2: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RJC is guaranteed by design while RJA is determined by the users board design.
a) 50C/W when mounted on a 1in2 pad of 2 oz copper.
b) 125C/W when mounted on a minimum pad.
www.fairchildsemi.com
12
1.0
ID, DRAIN CURRENT (A)
1.2
0.8
0.6
0.4
VGS = 10V
VGS = 4.5V
0.2
RJA=50oC/W
0
0
0
25
50
75
125
100
150
25
50
75
100
125
TA , AMBIENT TEMPERATURE (oC)
150
NORMALIZED THERMAL
IMPEDANCE, ZJA
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
o
0.001
-4
10
-3
-2
10
10
-1
10
10
10
10
10
1000
VGS = 10V
SINGLE PULSE
o
100
TA = 25 C
10
1
0.5
-4
10
-3
-2
10
10
-1
10
10
10
10
10
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80
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
10
STARTING TJ = 25oC
60
VDS = 5V
40
TJ = 25oC
20
TJ = 150oC
STARTING TJ = 150oC
0
1
1
0.01
0.1
10
100
50
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
VGS = 10V
TA = 25oC
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
60
TJ = -55oC
VGS = 5V
40
VGS = 3.5V
20
40
ID = 10.2A
30
20
ID = 1A
10
VGS = 3V
0
0.0
0.2
0.4
0.6
0.8
10
1.4
NORMALIZED GATE
THRESHOLD VOLTAGE
1.6
1.2
1.0
1.0
0.8
0.8
VGS = 10V, ID = 10.2A
0.6
-80
0.6
-40
40
80
120
160
-80
40
80
120
160
-40
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2000
1000
1.4
C, CAPACITANCE (pF)
1.6
1.2
1.0
-40
40
80
120
160
0.1
WAVEFORMS IN
DESCENDING ORDER:
ID = 10.2A
ID = 1A
12
15
1ms
10ms
THIS AREA IS
LIMITED BY rDS(on)
100ms
1s
SINGLE PULSE
TJ = MAX RATED
0.1
0.01
0.01
18
10s
DC
TA = 25oC
0.1
10
100
100us
10
RJA = 125oC/W
0
3
30
100
VDD = 15V
1
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
10
CRSS = CGD
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BVDSS
VDS
tP
VDS
L
IAS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VDD
RG
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01
tAV
VDS
VDD
Qg(TOT)
VDS
VGS
VGS = 10V
Qg(5)
VGS
Qgs2
VDD
DUT
VGS = 5V
VGS = 1V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
VDS
tON
tOFF
td(ON)
td(OFF)
RL
tf
tr
VDS
90%
90%
VGS
VDD
10%
10%
DUT
90%
RGS
VGS
VGS
50%
10%
50%
PULSE WIDTH
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26
0.23 + Area
R JA = 64 + -------------------------------
(EQ. 1)
(EQ. 2)
200
RJA = 64 + 26/(0.23+Area)
RJA (oC/W)
ZJA, THERMAL
IMPEDANCE (oC/W)
150
120
90
150
100
50
0.001
0.01
0.1
1
AREA, TOP COPPER AREA (in2)
10
60
30
0
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
102
103
www.fairchildsemi.com
.SUBCKT FDS8878 2 1 3
*February 2005
Ca 12 8 7.8e-10
Cb 15 14 7.8e-10
Cin 6 8 .78e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
DRAIN
2
10
ESLC
+
LGATE
GATE
1
Lgate 1 9 5.29e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 0.18e-9
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 1.6e-3
Rgate 9 20 2.3
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 8.9e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
11
+
17
EBREAK 18
-
50
RDRAIN
6
8
EVTHRES
+ 19 8
EVTEMP
RGATE + 18 22
9
20
21
16
DBODY
MWEAK
MMED
MSTRO
RLGATE
LSOURCE
CIN
7
RSOURCE
RLgate 1 9 52.9
RLdrain 2 5 10
RLsource 3 7 1.8
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
DBREAK
5
51
ESG
RLDRAIN
RSLC1
51
RSLC2
Ebreak 11 7 17 18 32.9
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
LDRAIN
DPLCAP
12
S1A
S2A
14
13
13
8
S1B
CA
RLSOURCE
RBREAK
15
17
18
RVTEMP
S2B
13
CB
6
8
VBAT
5
8
EDS
19
IT
14
+
EGS
SOURCE
3
+
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}
.MODEL DbodyMOD D (IS=2.0E-12 IKF=10 N=1.01 RS=7.0e-3 TRS1=8e-4 TRS2=2e-7
+ CJO=3.5e-10 M=0.55 TT=7e-11 XTI=2)
.MODEL DbreakMOD D (RS=0.2 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=3.8e-10 IS=1e-30 N=10 M=0.45)
.MODEL MstroMOD NMOS (VTO=2.36 KP=150 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MmedMOD NMOS (VTO=1.95 KP=5.0 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.3)
.MODEL MweakMOD NMOS (VTO=1.57 KP=0.02 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=23 RS=0.1)
.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-8e-7)
.MODEL RdrainMOD RES (TC1=15e-3 TC2=0.1e-5)
.MODEL RSLCMOD RES (TC1=1e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=3e-6)
.MODEL RvtempMOD RES (TC1=-1.8e-3 TC2=2e-7)
.MODEL RvthresMOD RES (TC1=-2.0e-3 TC2=-6e-6)
MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-1.0)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.0 VOFF=-1.5).ENDSNote: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
www.fairchildsemi.com
RDRAIN
6
8
ESG
EVTHRES
+ 19 8
+
LGATE
DBREAK
50
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
EVTEMP
RGATE + 18 22
9
20
21
11
MWEAK
EBREAK
+
17
18
-
MMED
MSTRO
CIN
DBODY
16
RLGATE
LSOURCE
7
RSOURCE
i.it n8 n17 = 1
12
l.lgate n1 n9 = 5.29e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 0.18e-9
S1A
S2A
14
13
13
8
S1B
CA
res.rlgate n1 n9 = 52.9
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 1.8
RBREAK
15
17
18
RVTEMP
CB
6
8
-
19
IT
14
+
EGS
SOURCE
3
RLSOURCE
S2B
13
DRAIN
2
VBAT
5
8
EDS
-
+
8
22
RVTHRES
10
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JUNCTION
th
RTHERM1
CTHERM1
RTHERM2
RTHERM1 TH 8 1e-1
RTHERM2 8 7 5e-1
RTHERM3 7 6 1
RTHERM4 6 5 5
RTHERM5 5 4 8
RTHERM6 4 3 12
RTHERM7 3 2 18
RTHERM8 2 TL 25
RTHERM3
RTHERM4
CTHERM2
CTHERM3
CTHERM4
5
RTHERM5
CTHERM5
RTHERM6
CTHERM6
rtherm.rtherm1 th 8 =1e-1
rtherm.rtherm2 8 7 =5e-1
rtherm.rtherm3 7 6 =1
rtherm.rtherm4 6 5 =5
rtherm.rtherm5 5 4 =8
rtherm.rtherm6 4 3 =12
rtherm.rtherm7 3 2 =18
rtherm.rtherm8 2 tl =25
}
RTHERM7
CTHERM7
RTHERM8
CTHERM8
tl
CASE
0.28 in2
0.52 in2
0.76 in2
1.0 in2
CTHERM6
1.2e-1
1.5e-1
2.0e-1
2.0e-1
2.0e-1
CTHERM7
0.5
1.0
1.0
1.0
1.0
CTHERM8
1.3
2.8
3.0
3.0
3.0
RTHERM6
26
20
15
13
12
RTHERM7
39
24
21
19
18
RTHERM8
55
38.7
31.3
29.7
25
COMPONANT
11
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Global Power ResourceSM
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Green FPS e-Series
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IntelliMAX
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OPTOPLANAR
Build it Now
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Current Transfer Logic
EcoSPARK
EfficentMax
EZSWITCH *
tm
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FACT Quiet Series
FACT
FAST
FastvCore
FlashWriter *
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F-PFS
tm
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tm
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TINYOPTO
TinyPower
Saving our world, 1mW /W /kW at a time
TinyPWM
SmartMax
TinyWire
SMART START
SerDes
SPM
STEALTH
SuperFET
UHC
SuperSOT-3
Ultra FRFET
SuperSOT-6
UniFET
SuperSOT-8
VCX
SupreMOS
VisualMax
SyncFET
XS
* EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make changes at any time without notice to
improve design.
No Identification Needed
Full Production
Obsolete
Not In Production
12
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