Open-Circuit End Effect Microstrip Line in Plasma Medium: OF Configuration

Comp., 1996, Vol. 19, pp.
171-176
Reprints available directly from the publisher
Photocopying permitted by license only
Active and Passive Elec.
(C) 1996 OPA (Overseas Publishers Association)

Amsterdam B.V. Published in The Netherlands under license by
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Printed in Malaysia
OPEN-CIRCUIT END EFFECT OF MICROSTRIP

LINE CONFIGURATION IN PLASMA MEDIUM
PREM BHUSHAN MITAL,
Fellow, IETE
Department of Electronics & Communication Engineering, C R State College of Engineering, Murthal
(Sonepat) Pin 131039 (INDIA)
31, 1995; in final form January 25, 1996)
August
(Received
The extension in length for open microstrip configuration in plasma media is determined using spectral
domain technique under quasi static approach [1, 2]. The results were verified by modifying Hammerstad equation for plasma media. Good agreement is found between the two results.
INTRODUCTION
The ideal field patterns of a open-circuited microstrip line are distorted with
fringing electric fields. The fringing fields and the increase in electrostatic energy as
a result of the extra stored energy is modeled by a capacitive termination CF. The
fringing capacitance at the termination of the line is equivalent to extending line by
A/ as given by the expression
A/?
tan
where
(Zo to Cv)
[3
Z0
to
(1)
propagation constant on the line
characteristic impedence of the line
angular frequency
FORMULATION
The microstrip in plasma medium is shown in Fig. 1 where
constant of plasma medium defined as
ep
A2= 1
ep
mp
(2)
where A is the plasma parameter
If
(x, y)
is the dielectric
static potential distribution in microstrip structure

171
P. MITAL
172
y y=
oo
P,o,n,o
(R) media
y=o
MICROSTRIP IN PLASMA MEDIUM

FIGURE 1
then
(13, y)
Fourier transform of
+(x, y)
j (x, y) dx dx
Assuming in media (1) + Ac y + Be -y
(3)
Ce -y + De y
& in media (2)
(4)
In Fourier transform domain, the boundary conditions are

at y
(13, 0)
(5)
oo
(13, o)
(6)
At interface
$(13, h + O)
and el:
d$
$(13, h
(13, h + O)
O)
(7)
d
y $(, h
O)
(13)
(8)
Taking f(x) as the change distribution on the strip conductor, total charge on strip
conductor
Q
f: f(x)
Hence
dx
MICROSTRIP LINE
173
f(x) ejinx dx
f(13)
(9)
Solving the above, we have
Ce -Ih
(x, h)
f()
(10)
(1 coth [3h + ep)
Hence the fourier transform of potential distribution is given as:
(13, h)
(11)
[(1 coth [3h + ep)
Line capacitance C is obtained using symmetry as
1
xr
Q2
fo {ep +
[(13)} 2
1 coth 13h} [3h
d(13h)
Taking approximately trial function for f(x)
(12)
Ixl which gives capacitance as
maximum
f(x)
={
-t/2 -< x -< t/2

elsewhere
2 sin
sin
If [3h
x, then d[3h
dx.
Hence
ro
[ep + er coth x]x

or
dx
(14)
P. MITAL
174
1.9
RT DUROID (r
2.
L)
---
I--
UJ
1.1
0-2
A =0.5
--"
A
0.9
A= 1-0
10 0
10wlh
FIGURE 2
C
sin
o.)
x(t)
sin
dx
x(.o
x(.o
2h
4h
(ep + er coth x)x

The effective permittivity of microstrip is given by
0.5
0.4
0.3
0.2
I0 -2
10
10 0
wlh
FIGURE 3
10
MICROSTRIP LINE
175
eef
(16)
C--
where C and Co are the capacitances per unit length of line with and without
dielectric. The effective dielectric constant is also given as
eeff--
r + P + r- P
2
to
12h h
1+
>- 1
(17)
And line extension A/? as given by Hammerstad is
[3]:
+ 0.262
e + 0.3 h
0.412
e 0.258 to + 0.813
(18)
NUMERICAL RESULTS
The results were obtained solving equations 15, 16, 17, and 18 numerically and are
plotted in Fig. 2 to 5.
11.0
10.0
z
o
u
9.0
-.A-,
1.0
8.0
7.0
10-2
10 0
10 -1
w/h
FIGURE 4
i0
E MITAL
176
0.4
0.3
0.2
100
10-
10
wlh
FIGURE 5
CONCLUSIONS
Calculations of length extension (A?) in plasma medium for various plasma
parameter values (A
.1,.3,.5,.7,.9) in an open microstrip configuration are
obtained using spectral domain technique under quasi static approach [4,5] and by
modifying Hammerstad equation for plasma media. Good agreement is found
between the two results.
ACKNOWLEDGEMENT
The author is indebted to Prof. B. Bhat and Prof. S.K. Koul, Centre for Applied
Research in Electronics, I.I.T. New Delhi for providing research facilities.
REFERENCES
1. E. Yamashita "Variational method for the analysis of Microstrip-like transmission lines", IEEE
trans. Microwave theory and techniques, Vol. MTT-16, pp. 529-535, August 1968.
2. B. Bhat & S.K. Koul "Lumped Capacitance, Open circuit end effects and edge capacitance of
microstrip-like transmission lines for microwave and millimeter wave applications", IEEE trans.,
Microwave theory and techniques, Vol. MTT-32, No. 4, pp. 433-439, April 1984.
3. E.O. Hammerstad "Equations for Microstrip Circuit design", 5th European MW conference, pp.
268-272, 1975.
4. E Silvester and E Benedek, "Equivalent capacitance of Microstrip Open Circuits", IEEE trans.
MTT-20, pp. 511-516.
5. B. Bhat & S.K. Koul, "Strip line-like transmission lines for Microwave Integrated Circuits", Willey
Eastern Ltd.
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Open-Circuit End Effect Microstrip Line in Plasma Medium: OF Configuration

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Open-Circuit End Effect Microstrip Line in Plasma Medium: OF Configuration

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Comp., 1996, Vol. 19, pp.

Active and Passive Elec.

(C) 1996 OPA (Overseas Publishers Association)

OPEN-CIRCUIT END EFFECT OF MICROSTRIP

where A is the plasma parameter

static potential distribution in microstrip structure

MICROSTRIP IN PLASMA MEDIUM

& in media (2)

In Fourier transform domain, the boundary conditions are

Solving the above, we have

(1 coth [3h + ep)

Hence the fourier transform of potential distribution is given as:

[(1 coth [3h + ep)

Line capacitance C is obtained using symmetry as

Taking approximately trial function for f(x)

-t/2 -< x -< t/2

[ep + er coth x]x

(ep + er coth x)x

And line extension A/? as given by Hammerstad is

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Shock and Vibration

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Electrical and Computer

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