D

TO-247

ARF442 200W 100V 13.56MHz

ARF443 200W 100V 13.56MHz

THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443.

RF OPERATION (1-15MHz )

POWER MOS IV

N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET

The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.

Specified 100 Volt, 13.56 MHz Characteristics:

Output Power = 200 Watts.
Gain = 22dB (Typ.)
Efficiency = 73% (Typ.)

Low Cost Common Source RF Package.

Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS
Symbol

All Ratings: TC = 25C unless otherwise specified.

Parameter

ARF442/443

VDSS

Drain-Source Voltage

300

VDGO

Drain-Gate Voltage

300

ID

UNIT
Volts

Continuous Drain Current @ TC = 25C

Amps

VGS

Gate-Source Voltage

30

Volts

PD

Total Power Dissipation @ TC = 25C

167

Watts

Junction to Case

0.75

C/W

RJC
TJ,TSTG
TL

-55 to 150

Operating and Storage Junction Temperature Range

300

Lead Temperature: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol
BVDSS

Characteristic / Test Conditions

MIN

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A)

300

VDS(ON) On State Drain Voltage

IDSS
IGSS
gfs
VGS(TH)

TYP

MAX

UNIT
Volts

(ID(ON) = 6.5A, VGS = 10V)

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)

250

Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C)

1000

Gate-Source Leakage Current (VGS = 30V, VDS = 0V)

100

Forward Transconductance (VDS = 10V, ID = 5.5A)

3.5

Gate Threshold Voltage (VDS = VGS, ID = 50mA)

4.5

A
nA
mhos

Volts

APT Website - http://www.advancedpower.com

USA
405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382-8028

FAX: (541) 388-0364

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61

EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord

This datasheet has been downloaded from http://www.digchip.com at this page

050-4506 Rev C

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

ARF442/443

DYNAMIC CHARACTERISTICS
Symbol

Characteristic

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

MIN

TYP

MAX

730

900

VDS = 100V

100

140

f = 1 MHz

33

50

MAX

Test Conditions
VGS = 0V

Reverse Transfer Capacitance

UNIT

pF

FUNCTIONAL CHARACTERISTICS
Symbol
GPS1

Characteristic
Common Source Amplifier Power Gain

Drain Efficiency

Electrical Ruggedness VSWR 30:1

GPS2
2

Test Conditions

MIN

TYP

VDD = 100V

17

18.9

dB

73

VGS = 0V
Pout = 200W
f = 13.56MHz

UNIT

No Degradation in Output Power

Common Source Amplifier Power Gain

VDD = 100V, Pout = 200W

22

dB

Drain Efficiency

IDQ = 50mA, f = 13.56MHz

65

1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

TYPICAL 13.56 MHz, 400 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT

.01F

Q1

RF
Input

L1

0.5H

BFC1

T1
2:1

C1

C2
T2

R1
75-480pF

RF
Output

C3
.01F

10K
C4

C5

.01F

Q2

.01F

RFC1

C6

C8

C7
.01F

.01F

C9
.01F

C10
+
.1F

VDD = 100V
10F (100V)

Parts List
C1 = 75-480pF Compression Mica
C2, C3, C4, C5, C6, C7 & C8 = .01F @ 200V, CK06
C9 = .1F @ 100V, CK06
C10 = 10F @ 100V Electrolytic
R1 = 10K, 5%, 1/4W, Carbon
Q1 = ARF442
Q2 = ARF443
L1 = 7.5 T of #18AWG, ID = .438", L = 0.5H

050-4506 Rev C

BFC1 = Balanced DC Feed Choke; 7 T of #22 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. i = 125
RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. i = 2000
T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. i = 850
T2 = 1:1 Z Transmission Line Transformer, using 50 coax.
Coax = 22" of mini 50 PTFE coax, OD = .095"
A large 2-hole balun core was constructed by gluing two Fair-Rite #2643102002, i = 850 cores together.
The transformer is constructed by winding 4.5 turns of the coax around the center of the balun core.
PCB = .062" G10 Epoxy Glass.

ARF442/443

RF POWER OUT (WATTS)

500

Performance of aTypical
Push-Pull Power Amplifier (2-Devices)
f = 13.56 MHz
V
= 100V

400

DD

300

200

100

4
5
6
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In

TJ = +25C
8
TJ = +125C

4
TJ = +125C
TJ = +25C

TJ = -55C

10

re N)
He (O
n
tio R DS
a
er By
Op ited
Lim

1
.5
TC =+25C
TJ =+150C

1
5
10
50 100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Maximum DC Safe Operating Area

DS

=V

GS

1.1

1.0

0.9

0.8

0.7

0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics

10
ID, DRAIN CURRENT (AMPERES)

VGS(TH), THRESHOLD VOLTAGE

(NORMALIZED)

12

.1

Figure 2, RF Power Out vs RF Power In

VDS = 30V
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE

BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN

VOLTAGE (NORMALIZED)

ID, DRAIN CURRENT (AMPERES)

TJ = -55C

1.2

16

-50

-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (C)
Figure 3, Threshold Voltage vs Temperature

1.2

1.1

1.0

0.9

0.8

0.7

-50

-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5, Breakdown Voltage vs Temperature

3,000
Ciss

500
Coss
Crss

100
50

10

.01

.05

.1

.5
1
5
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage

50

100

050-4506 Rev C

C, CAPACITANCE (pF)

1,000

ARF442/443
TO-247AD Package Outline

ARF442
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)

15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)

Source

6.15 (.242) BSC

20.80 (.819)
21.46 (.845)

3.55 (.138)
3.81 (.150)

ARF44E
2.87 (.113)
3.12 (.123)

4.50 (.177) Max.

0.40 (.016)
0.79 (.031)

1.65 (.065)
2.13 (.084)

19.81 (.780)
20.32 (.800)

GATE
SOURCE
DRAIN

1.01 (.040)
1.40 (.055)

2.21 (.087)
2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

ARF443
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)

15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)

Source

6.15 (.242) BSC

20.80 (.819)
21.46 (.845)

3.55 (.138)
3.81 (.150)

ARF44O
2.87 (.113)
3.12 (.123)

4.50 (.177) Max.

0.40 (.016)
0.79 (.031)

1.65 (.065)
2.13 (.084)

19.81 (.780)
20.32 (.800)

DRAIN
SOURCE
GATE

1.01 (.040)
1.40 (.055)

2.21 (.087)
2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

050-4506 Rev C

NOTE: The ARF442 and ARF443 comprise a symmetric pair of RF power transistors and
meet the same electrical specifications. The device pin-outs are the mirror image of each
other to allow ease of use as a push-pull pair.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA
405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382-8028 FAX: (541) 388 -0364

EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61