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Laboratoire de Genie Chimique UMR 5503, Universite Paul Sabatier, 118 route de Narbonne, 31062 Toulouse cedex 04, France
b
Institute of Chemical Engineering, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
Received 23 July 2002; received in revised form 14 October 2002
Abstract
We have investigated the electrochemical oxidation of sulfuric acid on boron-doped synthetic diamond electrodes (BDD)
obtained by HF CVD on p-Si. The results have shown that high current efficiency for sulfuric acid oxidation to peroxodisulfuric
acid can be achieved in concentrated H2SO4 ( /2 M) at moderate temperatures (8 /10 8C). The main side reaction is oxygen
evolution. Small amounts of peroxomonosulfuric acid (Caros acid) have also been detected. A reaction mechanism involving
hydroxyl radicals, HSO4 and undissociated H2SO4 has been proposed. According to this mechanism electrogenerated hydroxyl
radicals at the BDD anode react with HSO4 and H2SO4 giving peroxodisulfate.
# 2002 Elsevier Science Ltd. All rights reserved.
Keywords: Diamond electrode; Electrosynthesis; Sulfuric acid; Peroxodisulfuric acid
1. Introduction
The electrolysis of sulfuric acid solution could allow,
in certain conditions, the electrosynthesis of persulfuric
acid H2S2O8. Persulfuric acid is widely used as oxidant
in many applications. In wastewater treatment it is used
for cyanides removal of effluents. Other applications
concern dyes oxidation, fibres whitening, promotion for
radical polymerization, total organic compound
measurements. . . [1]. Persulfuric acid is an important
intermediate product in the electrochemical production
of hydrogen peroxide [1 /3].
The S2O2
ions are formed from the oxidation of
8
SO2
and HSO4 species at very high potentials:
4
2
2HSO
4 0 S2 O8 2H 2e
2SO2
4
S2 O2
8 2e
E 2:123 V
E 2:01 V
(1)
(2)
E 1:023 V
(3)
0013-4686/02/$ - see front matter # 2002 Elsevier Science Ltd. All rights reserved.
PII: S 0 0 1 3 - 4 6 8 6 ( 0 2 ) 0 0 6 8 8 - 6
432
2. Experimental
Boron-doped diamond films, Diachem , were synthesized by the hot filament chemical vapor deposition
technique (HF CVD) on conducting p-Si substrate (0.1
V cm, Siltronix). The filament temperature ranged from
2440 to 2560 8C and the substrate one was kept at
830 8C. The reactive gas used was methane in an excess
of dihydrogen (1% CH4 in H2). The doping gas was
trimethylboron with a concentration of 3 ppm. The gas
mixture was supplied to the reaction chamber, providing
a 0.24 mm h1 growth rate for the diamond layer. The
diamond films were about 1 mm thick. This HF CVD
process, produces columnar, randomly textured, polycrystalline films.
Electrochemical measurements were carried out in a
conventional three-electrode cell using a computer
433
103 C 3
[H2 SO4 ]5:54910
(5)
3
4:98410
0:03389C 0:02862C
4
C3
(6)
+
+
HSO
4 OH 0 SO4 H2 O
k2
+
H2 SO4 OH+ 0 SO
H3 O
4
k3
+
+
SO
SO
0 S2 O2
4
4
8
(7)
(8)
(9)
(4)
In sulfuric acid solutions, sulfate anion, hydrogenosulfate anion and undissociated sulfuric acid coexist
[23 /26]. According to Librovich and Maiorov [23] the
concentrations of hydrogenosulfate ([HSO4]) and un-
Fig. 5. Concentration of SO2
4 , HSO4 ions and undissociated H2SO4
as a function of C according to Librovich and Maiorov [23].
434
k4
(10)
d[OH+ ]
dt
+
+
+ 2
k1 [HSO
4 ][OH ]k2 [H2 SO4 ][OH ]k4 [OH ]
(11)
The influence of the concentration C on the experimental current efficiency at T /9 8C is reported in Fig.
6. It appears two zones.
h
+
+
k1 [HSO
4 ][OH ] k2 [H2 SO4 ][OH ]
2
2k4 [OH+ ] k1 [HSO4 ][OH+ ] k2 [H2 SO4 ][OH+ ]
(12:a)
The relation (Eq. (12.a)) could be linearized:
h
1
1 h [HSO
4 ]
k1
k2
[H SO ]
2 4
+
+
2k4 [OH ] 2k4 [OH ] [HSO4 ]
(12:b)
zF F
I
2
([S2 O2
8 ]outlet [S2 O8 ]inlet )
(13)
Table 1
Values of the constant rate k1, k2, k3 and k4 of the sulfate radical at pH
1
k1 (dm3 mol 1 s 1)
435
(19)
Acknowledgements
1
2HSO
4 2O2
(14)
(15)
(16)
(17)
d[S2 O2
8 ]=dt
(18)
[S2 O2
8 ](k?1 k?2 [H ])
References
[1] N. Ibl, H. Vogt, in: J.O.M. Bockris, B.E. Conway, E. Yeager,
R.E. White (Eds.), Comprehensive Treatise of Electrochemistry,
vol. 2, Plenum Press, New York, 1981, p. 224.
[2] C. Oloman, A.P. Watkinson, Can. J. Chem. Eng. 54 (1976) 312.
[3] C. Comninellis, in: C.A.C. Sequeira (Ed.), Environmental Oriented Electrochemistry, Elsevier, Amsterdam, 1994.
[4] J.J. Carey, C.S. Christ, S.N. Lowery, US Patent 5399247 (1995).
[5] W. Haenni, H. Baumann, C. Comninellis, D. Gandini, P.
Niedermann, A. Perret, N. Skinner, Diamond Relat. Mater. 7
(1998) 569.
[6] A. Perret, W. Haenni, P. Niedermann, H. Baumann, N. Skinner,
C. Comninellis, D. Gandini, Proceedings of the International
Symposium on Diamond Related Materials 5th, PV 97-32, 275,
The Electrochemical Society Proceedings Series, Pennington, NJ,
1997.
[7] D. Gandini, P.A. Michaud, I. Duo, E. Mahe`, W. Haenni, A.
Perret, C. Comninellis, New Diamond Frontier Carbon Technol.
9 (1999) 303.
[8] A. Perret, W. Haenni, N. Skinner, X.-M. Tang, C. Comninellis,
D. Gandini, B. Correa, G. Foti, Diamond Relat. Mater. 8 (1999)
820.
[9] W. Starck, Z. Phys. Chem. 29 (1899) 385.
[10] W. Smit, J.G. Hoogland, Electrochim. Acta 16 (1971) 1.
[11] W.D. Bancroft, Trans. Electrochem. Soc. 71 (1937) 159.
[12] J.W. Schultze, Ber. Bunsengens. Phys. Chem. 73 (1969) 483.
[13] F. Foerster, in: J.A. Barth (Ed.), Elektrochemie wassiger Losungen, Leipzig, 1923.
[14] K. Elbs, O. Schonherr, Z. Elektrochem. 2 (1895) 245.
[15] E.V. Kasatkin, A.A. Rakov, Electrochim. Acta 10 (1965) 131.
[16] A. Frumkin, Electrochim. Acta 5 (1961) 265.
[17] P.-A. Michaud, E. Mahe, W. Haenni, A. Perret, C. Comninellis,
Electrochem. Solid-State Lett. 3 (2) (2000) 77.
[18] J.P. Hoare, The Electrochemistry of Oxygen, Wiley, New York,
1968.
[19] J.O.M. Bockris, J. Chem. Phys. 24 (1956) 817.
[20] S. Trasatti, J. Electroanal. Chem. 11 (1980) 125.
[21] P. Ruetschi, P. Delahay, J. Chem. Phys. 23 (1955) 556.
[22] J.E. Vitt, D.C. Johnson, J. Electrochem. Soc. 139 (3) (1992) 774.
[23] N.B. Librovich, V.D. Maiorov, Izv. Akad. Nauk SSSR Ser.
Khim. 3 (1977) 684.
436