UNISONIC TECHNOLOGIES CO.

, LTD
S8550

PNP SILICON TRANSISTOR

LOW VOLTAGE HIGH

CURRENT SMALL SIGNAL PNP
TRANSISTOR

DESCRIPTION

The UTC S8550 is a low voltage high current small signal PNP
transistor, designed for Class B push-pull audio amplifier and
general purpose applications.

1
TO-92

FEATURES

* Collector current up to 700mA

* Collector-Emitter voltage up to 20 V
* Complementary to UTC S8050

ORDERING INFORMATION
Order Number
Lead Free Plating
Halogen Free
S8550L-x-T92-B
S8550G-x-T92-B
S8550L-x-T92-K
S8550G-x-T92-K

Package
TO-92
TO-92

Pin Assignment
1
2
3
E
B
C
E
B
C

Packing
Tape Box
Bulk

MARKING

www.unisonic.com.tw
Copyright 2014 Unisonic Technologies Co., Ltd

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PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified.)

PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-700
mA
Collector Dissipation (TA=25C)
PC
1
W
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-65 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified.)

PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT)
VBE(SAT)
VBE
fT
Cob

TEST CONDITIONS
IC =-100A, IE =0
IC =-1mA, IB =0
IE =-100A, IC =0
VCB =-30V, IE =0
VEB =-5V, IC =0
VCE =-1V, IC =-1mA
VCE =-1V, IC =-150mA
VCE =-1V, IC =-500mA
IC =-500mA, IB =-50mA
IC =500mA, IB =-50mA
VCE =-1V, IC =-10mA
VCE =-10V, IC =-50mA
VCB =10V, IE =0, f =1MHz

MIN
-30
-20
-5

TYP

MAX

-1
-100
100
120
40

UNIT
V
V
V
A
nA

400
-0.5
-1.2
-1.0

100
9.0

V
V
V
MHz
pF

CLASSIFICATION OF hFE2
RANK
RANGE

C
120-200

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

D
160-300

E
280-400

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TYPICAL CHARACTERISTICS

Static Characteristics
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
-0.3

IB=-1.5mA

-0.2

IB=-1.0mA

-0.1

IB=-0.5mA

Base-Emitter on Voltage

Saturation Voltage, (mV)

-101

-100

-0.2
-0.4
-0.6
-0.8
Base-Emitter Voltage, VBEO (V)

102

101

100
-100

-10
-10
Collector Current, IC (mA)

-10

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

-103

Saturation Voltage

-103

VBE(SAT)

-102
VCE(SAT)

103

VCE=-10V

-100
-101
-102
Collector Current, IC (mA)

IC=10xIB

-101
-10-1

-1.0

Current Gain-Bandwidth Product

103

101

-104

VCE=-1V

-10-1
0

102

100
-10-1

-0.4
-0.8
-1.2
-1.6
-2.0
Collector-Emitter Voltage, VCEO (V)

-102
Collector Current, IC (mA)

VCE=-1V
DC Current Gain, hFE

-0.4

Current Gain-Bandwidth Product, fT

(MHz)

DC Current Gain
103

Capacitance, COB (pF)

Collector Current, IC (mA)

-0.5

-100
-101
-102
Collector Current, IC (mA)

-103

Collector Output Capacitance

f=1MHz
IE=0

102

101

100
-100

-101
-102
-103
Collector-Base Voltage, VCBO (V)

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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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