NATIONAL UNIVERSITY of SINGAPORE

Department of Electrical and Computer Engineering

EE2005 Electronics
Homework Assignment #9 Solution
1. Write down the transfer function that has the following phase response.

You may assume

the gain is unity and there is no positive zero in the transfer function.

(5 marks)

s
+1
1

2
50
kHz
(
)
H s =

s
s
+1
+1
2 300 Hz
2 300 kHz
2. Consider the amplifier shown in Fig. 9-2. Assume the BJT has =100, VA=100V.
Use the following model to verify your simulation results:
.model nbjt NPN is=3.3e-15 bf=100 rb=62.5 tf=1n cje=0.45p cjc=2p itf=1m xtf=5 vtf=10 vaf=100
(a) Design RE so that the small signal AC gain (AV=vo/vs) is 10.
(2 marks)
(4 marks)
(b) Design CS, CL and CB so that the fL is 200Hz.
(c) Create the netlist for the circuit below.
(2 marks)
(d) What is your simulated AV and fL?
(2 marks)
(e) Supposed Q1 is replaced with MOSFET M1 with the following device characteristics,
Kn=2mA/V2, VTHN=0.5V, and no body effect.
(2 marks)
What would be the required Ibias in order to maintain the same AV?
(f) Comment on the effect of CB on fL for part (e).
(3 marks)
10V
10V
RE

R1
100k

CL

Rx

vo
RL

Q1
CB

100k

R2
100k

RS
50

CS
Ibias

vs

100A

Rin

Fig. 9-2

IC
(a) g
= 4mA / V
m , Q1 =
VT

AV =

ro , Q1 =

VA
= 1M
IC

Rin =

1
g m , Q1

ro , Q1 + RE // RL
1

= 250
//
R RL g m , Q1
ro , Q1 + E

vo
Rin
Rin
=
g m , Q1 (RE // Rx // RL )
g m , Q1RE = 10 RE = 3k
vs Rin + RS
Rin + RS
1

(b)

2f L = b1 =

CL

CS

CB

= 2 200 Hz

C S sees the smallest resistance make C S smallest and

CS

CS

dominant

= 2 200 Hz CS = Req , CS C S = (RS + Rin )C S = 796 s C S = 2.65 F

C L and C B can be chosen such that CL , CB >> CS , for example 10 times larger
As Req , CL , Req , CB >> Req , CS , pick C L = C B = 10 F will meet the above criteria
(c)
*hw9 question 2
vs A 0 AC 1
Rs A B 50
Cs B C 2.65u
Ibias C 0 100u
Q1 D E C nbjt
R1 F E 100k
R2 E 0 100k
CB E 0 10u
RE F D 3k
CL D G 10u
RL G 0 100k
VDD F 0 10
.model nbjt NPN is=3.3e-15 bf=100 rb=62.5 tf=1n cje=0.45p cjc=2p itf=1m xtf=5
+vtf=10 vaf=100
.ac dec 10 0.1 100meg
.probe
.end

(d)

Simulated AV and fL are 19.4dB and 194.5Hz respectively.

(e)

g m , M 1 = 4 K n I D = 4 mA / V I D = 2mA
(f) If it is mosfet, the CB will not affect the fL because it is not in the signal path and has no
contribution to b1.

3. Write down the transfer function that has the following gain response.
is no positive zero in your transfer function.

H (s ) = 31.6

(s + 2 200) (s + 2 1k )

You can assume there

(s 2 400k + 1)
(s 2 30k + 1)

4. Consider the amplifier shown in Fig. 9-4. Assume the MOSFET has Kn=100A/V2,
VTHN=0.5V, Cgs=2pF, Cgd=0.5pF and no body effect.
(a) Design RREF and RB so that the small signal AC gain (AV=vo/vs) is -6.
(b) Design CL so that the fL is 50Hz.
(c) Can Miller Theorem be applied for fU estimation and what is the fU?
(d) Create the netlist for this circuit.
(e) What is your simulated AV and fL?
Use PSPICE and the following model to verify your results.
.model Nsimple_mos NMOS level=1 w=289u l=30u vto=0.5 tox=100n lambda=0.0
+cgdo=1.73n
15V

RE
RS
1k

CL

10k
CS

v1

M2

10F

vo
RL

15V

RREF

200k

RB

vs

M1
Fig. 9-4
(a)

Choose RB = 100k >> RS so that v1 vs

vo vo
= g m , M 2 (RE // RL ) = 6 g m , M 2 = 630 A / V = 4 K n I D , M 2
vs v1

I D , M 2 = I D , M 1 = 992 A = K n (VGS , M 1 VTHN ) VGS , M 1 = 3.65

2

RREF =

15 3.65
= 11.4k
992 A

(b)

b1 =
1

CL

CS

1
ReqCLCL

CL

= 2f L = 2 50 Hz

Q CS = CS ReqCS 1s negligible

2f L CL = 15.2nF

(c)

g m , M 2 Reqi = 630 (RS // RB ) 0.63 < 1 Miller Theorem cannot be used

ReqCgd = Reqi + (1 + g m , M 2 Reqi )Reqo

Reqi RS // RB 1k

Reqo = RE // RL = 9.5k

ReqCgd = 16.5k Cgd = 0.5 p 16.5k = 8.25n

ReqCgs RS // RB = 1k Cgs = 2 p 1k = 2n
fU =
(d)

2 ( Cgd + Cgs )

= 15.5MHz

*hw9 question 4
vs A 0 AC 1
Rs A B 1k
Cs B C 10u
RB C G 100k
M2 E C 0 0 nsimple_mos
RE E D 10k
M1 G G 0 0 nsimple_mos
RREF D G 11.4k
CL E H 15.2n
RL H 0 200k
vdd D 0 15
.model nsimple_mos nmos level=1 w=289u l=30u vto=0.5 tox=100n lambda=0 +cgdo=1.73n
.ac dec 10 0.1 100meg
.probe
.end

(d)
Simulated Gain=15.48dB, fL=50.48Hz, fU=17.154MHz

5. Determine Ho, initial phase and final phase for the following transfer functions:
i)
3.14 10 7 s

H (s ) =

(s + 2 500 k )(s + 2 10k )

= 10

Ho=10.

(s + 2 10k )

1
s

+ 1

2 500 k

Initial phase=90 deg, final phase=-90 deg

ii)

H (s ) =

1.88 10 8 (s + 2 40k )
(s + 2 300k )(s + 2 20k )

200
+ 1
2 40k

=
s
s

+ 1
+ 1

2 300k
2 20k
Ho=200
Initial phase=0, final phase=-90 deg
iii)

H (s ) =

2.37 1014 s 2
(s + 2 3M )(s + 2 100k )(s + 2 4k )(s + 2 20k )

= 20

s2
1

s
(s + 2 4k )(s + 2 20k ) s

+ 1
+ 1

2 100k
2 3M

Ho=20
Initial phase=180 deg, final phase=-180 deg
6. Consider the amplifier shown in Fig. 9-6. Assume the BJT has =100, VA=100V.
(f) Design RE so that the small signal AC gain (AV=vo/vs) is 100.
(g) Design CS, CL and CB so that the fL is 50Hz.
(h) This circuit would not function as it is. Describe what the problem is and suggest a way
to fix the problem without affecting (a) and (b).
10V
10V
RE

R1

CL

20k

RL

Q1
CB

100k

R2
20k

RS
50

CS
Ibias
500A

vs

Fig. 9-6

vo

(a)

gm =

IC
= 20m
VT

Rin

1
= 50
gm

AV =

Rin
g m (RE // RL ) = 100
Rin + RS

ro = 200k r = 5k

RE // RL = 10k R E = 11k
(b)

Q b1 =

The smallest do min ate

Make C S do min ate
1

= 2 50 C S = 31.8F

C S RS +

g
m

Make CL and CB negligible

CL

CB

b1
100

CL = C L (RE + RL ) C L = 2.87 F
CB = C B {R1 // R2 //[r (1 + g m RS )]} C B = 64F
(c)

VC ,Q1 = VDD = I bias R E = 4.5V

1
VB ,Q1 = VDD = 5
2
VB ,Q1 > VC ,Q1 not forward active region
Adjusting VB ,Q1 so that it is less than VC ,Q1