Académique Documents
Professionnel Documents
Culture Documents
Aluno:________________________________________ Turno:_____________
EXPERINCIA 1
Objetivos:
Conhecer os equipamentos utilizados para efetuar as prticas;
Iniciar as prticas em circuitos com diodo retificador e diodo zener.
Comprovar o funcionamento dos diodos na 1 e 2 aproximaes.
Tempo de Execuo: ____ aulas
Desenvolvimento
Equipamentos e materiais necessrios:
3 - diodos 1N4007 por aluno;
1 - diodo Zener de 5V1/500mW por aluno;
10 - resistores de 1K de 1/8W;
1 - potenciometro de 10K por aluno;
1 - placa de montagem com pontes de terminais para cada aluno;
2 - multmetro analgico ou digital;
2 - ferro de solda;
1 - Fonte Analgica Tektronix;
* - Solda;
2 - suporte para ferro de solda;
* - Cabos banana-banana e banana- garra;
1) Para cada um dos circuitos (1, 2, 3, 4, 5, 6, 7 e 8), calcule as correntes e
tenses nos resistores com os diodos em 1 e 2 aproximaes.
2) Somente aps o clculo monte os circuitos na placa de pontes de terminais;
3) Realize as medidas de tenso sobre os resistores e os diodos, tambm e nos
pontos indicados para cada circuito procurando preencher com cuidado a sua
tabela.(Ex: VAB)
4) Monte e identifique quais so as funes Lgicas dos circuitos 9 e 10.
Relatrio:
Fazer relatrio detalhado (1 por Aluno) mostrando todas as caractersticas e
concluses observadas nesta experincia, entregando-o na data estabelecida.
Tabela do Circuito 1
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
D1
3
Tabela do Circuito 2
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
D1
Tabela do Circuito 3
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
R2
R3
D1
5
Tabela do Circuito 4
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
R2
R3
D1
6
Tabela do Circuito 5
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
R2
R3
D1
D2
D3
VAB
7
Tabela do Circuito 6
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
D1
Com a fonte em 0V, Observe o que acontece quando voc aumenta a
tenso em passos de 0,5V at o valor mximo de 10V. Anote suas
observaes!
Tabela do Circuito 7
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
D1
Com a fonte em 0V, Observe o que acontece quando voc aumenta a tenso
em passos de 0,5V at o valor mximo de 10V. Anote suas observaes!
Tabela do Circuito 8
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
D1
Observe o que acontece quando voc varia o potencimetro. Anote suas
observaes!
10
Circuito 9
Sada
Circuito 10
Sada
11
Cortar aqui
----------------------------------------------
12
EXPERINCIA 2
Objetivos:
Conhecer os equipamentos utilizados para efetuar as prticas;
Iniciar as prticas de retificadores.
Comprovar o funcionamento dos retificadores com e sem filtros
capacitivos.
Tempo de Execuo: ____ aulas
Desenvolvimento
Equipamentos e materiais necessrios:
1 - transformador de 12V+12V ou 9V+9V;
1 - osciloscpio analgico;
1 - placa de montagem com pontes de terminais; (de cada equipe)
1 - multmetro digital MINIPA;
1 - suporte para ferro de solda;
* - Cabos banana-banana e banana- garra;
1) Medir as formas de onda da sada de calibrao do osciloscpio,
apresentando os ajustes de Volts/Div. dos canais 1 e 2, Time/Div. E ajustes
das pontas de prova. Apresente ainda a freqncia e a tenso pico-a-pico.
2) Medir e apresentar as formas de onda do secundrio do transformador
apresentando os valores para: Freqncia, Perodo, Tenso pico a pico, e
tenso RMS.
3) Implementar um circuito retificador de meia onda, anotando as formas de onda
de entrada, sada e seus valores de pico;
4) Testar o circuito montado anteriormente com capacitores eletrolticos de 10,
100, e 1000uF, e anotar as formas de onda da tenso de sada;
5) Implementar um circuito retificador de onda completa com 2 diodos, anotando
as formas de onda de entrada, sada e seus valores de pico;
6) Testar o circuito montado anteriormente com capacitores eletrolticos de 10,
100, e 1000uF, e anotar as formas de onda da tenso de sada;
7) Implementar um circuito retificador de onda completa em Ponte (4 diodos),
anotando as formas de onda de entrada, sada e seus valores de pico;
8) Testar o circuito montado anteriormente com capacitores eletrolticos de 10,
100, e 1000uF, e anotar as formas de onda da tenso de sada;
*obs: utilizar um resistor de carga para os retificadores de 1K.
Relatrio:
Fazer relatrio detalhado (1 por Aluno) mostrando todas as caractersticas e concluses
observadas nesta experincia, entregando-o na data estabelecida.
13
Visto Projeto:___________
Escala Volts/DIV
Canal1:____________Ponta de Prova:_____
Canal2:____________Ponta de Prova:_____
Escala Time/DIV
TIME/DIV:_____________
Observaes
14
Visto Projeto:___________
Escala Volts/DIV
Canal1:____________Ponta de Prova:_____
Canal2:____________Ponta de Prova:_____
Escala Time/DIV
TIME/DIV:_____________
Observaes
15
Observaes
16
Escala Volts/DIV
Canal1:_____________Ponta de Prova:_____
Canal1:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Escala Time/DIV
Escala Time/DIV
TIME/DIV:_____________
TIME/DIV:_____________
Observaes
17
Observaes
18
Escala Volts/DIV
Canal1:_____________Ponta de Prova:_____
Canal1:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Escala Time/DIV
Escala Time/DIV
TIME/DIV:_____________
TIME/DIV:_____________
Observaes
19
Observaes
20
Escala Volts/DIV
Canal1:_____________Ponta de Prova:_____
Canal1:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Escala Time/DIV
Escala Time/DIV
TIME/DIV:_____________
TIME/DIV:_____________
Observaes
21
Cortar aqui
----------------------------------------------
1. Projeto:_______________________________________________Visto:_______
2. Projeto:_______________________________________________Visto:_______
3. Projeto:_______________________________________________Visto:_______
4. Projeto:_______________________________________________Visto:_______
5. Projeto:_______________________________________________Visto:_______
6. Projeto:_______________________________________________Visto:_______
7. Projeto:_______________________________________________Visto:_______
8. Projeto:_______________________________________________Visto:_______
22
EXPERINCIA 3
Objetivos:
Aprender como interpretar os dados da especificao tcnica do
fabricante;
Conhecer os equipamentos utilizados para efetuar as prticas;
Comprovar o funcionamento dos ceifadores polarizados.
Tempo de Execuo: ____ aulas
Desenvolvimento
Equipamentos e materiais necessrios:
1 Gerador de Funes;
1 Fonte Analgica Tektronix;
2 Pontas de prova para osciloscpio;
1 Osciloscpio analgico;
2 Diodos de sinal 1N4148
1 Resistor de 1K
1 Placa de montagem com pontes de terminais; (de cada equipe)
1 Multmetro digital MINIPA;
1 Suporte para ferro de solda;
* - Cabos banana-banana e banana- garra;
1. Implemente o seguinte circuito Ceifador polarizado.
Observaes
24
Escala Volts/DIV
Canal1:_____________Ponta de Prova:_____
Canal1:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Escala Time/DIV
Escala Time/DIV
TIME/DIV:_____________
TIME/DIV:_____________
Observaes
25
Observaes
26
Escala Volts/DIV
Canal1:_____________Ponta de Prova:_____
Canal1:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Escala Time/DIV
Escala Time/DIV
TIME/DIV:_____________
TIME/DIV:_____________
Observaes
27
Cortar aqui
----------------------------------------------
1) Projeto:_______________________________________________
Visto:_______
2) Projeto:_______________________________________________
Visto:_______
3) Projeto:_______________________________________________
Visto:_______
4) Projeto:_______________________________________________
Visto:_______
5) Projeto:_______________________________________________
Visto:_______
6) Projeto:_______________________________________________
Visto:_______
28
EXPERINCIA 4
Objetivos:
Aprender como interpretar os dados da especificao tcnica do
fabricante;
Conhecer os equipamentos utilizados para efetuar as prticas;
Comprovar o funcionamento dos Grampeadores e Multiplicadores.
Tempo de Execuo: ____ aulas
Desenvolvimento
Equipamentos e materiais necessrios:
1 Osciloscpio analgico;
2 Pontas de prova para osciloscpio;
2 Diodos 1N4004 ou 1N4007
2 Capacitores eletrolticos de 1000uF/25V ou maior
1 Resistor de 1K
1 Placa de montagem com pontes de terminais; (de cada equipe)
1 Suporte para ferro de solda;
* - Cabos banana-banana e banana- garra;
1. Implemente o seguinte circuito Grampeador.
29
Relatrio:
Fazer relatrio detalhado (1 por Aluno) mostrando todas as caractersticas e concluses
observadas nesta experincia, entregando-o na data estabelecida.
30
Escala Volts/DIV
Canal1:_____________Ponta de Prova:_____
Canal1:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Escala Time/DIV
Escala Time/DIV
TIME/DIV:_____________
TIME/DIV:_____________
Observaes
31
Cortar aqui
----------------------------------------------
1) Projeto:_______________________________________________
Visto:_______
2) Projeto:_______________________________________________
Visto:_______
32
EXPERINCIA 5
Objetivos:
Aprender como interpretar os dados da especificao tcnica do
fabricante;
Conhecer os equipamentos utilizados para efetuar as prticas;
Iniciar o trabalho com transistores como chave.
Tempo de Execuo: ____ aulas
Desenvolvimento
Equipamentos e materiais necessrios:
1 Fonte Analgica;
1 Multmetro;
1 Placa de Pontes de Terminais da EQUIPE;
* - Resistores diversos e demais componentes da EQUIPE;
* - Cabos banana jacar da EQUIPE.
1) Considerando o circuito abaixo, calcule e realize as medidas pedidas:
IC
VBB VBE
e IB =
;
IB
Rb
33
IC
VBB VBE
e IB =
;
IB
Rb
34
Tabela do Circuito
Ganho do transistor
Bc
=
Vin = 12V
Vi = GND
IC calculado
IB calculado
IC medido
IB medido
VCE medido
VBE medido
Observaes
35
Cortar aqui
----------------------------------------------
1) Projeto:_______________________________________________
Visto:_______
2) Projeto:_______________________________________________
Visto:_______
36
EXPERINCIA 6
Objetivos:
Aprender como interpretar os dados da especificao tcnica do
fabricante;
Conhecer os equipamentos utilizados para efetuar as prticas;
Iniciar o trabalho com transistores como AMPLIFICADORES
Tempo de Execuo: ____ aulas
Desenvolvimento:
Equipamentos e materiais necessrios:
1 Fonte Analgica;
1 Osciloscpio Digital;
2 Pontas de prova para osciloscpio;
1 Multmetros;
1 Placa de Pontes de Terminais da EQUIPE;
Cabos banana jacar da EQUIPE;
Componentes diversos da EQUIPE.
1) Considerando o circuito a seguir, calcule os resistores de polarizao e realize
as medidas pedidas com os seguintes dados: iB = 250A, VCC = 12V e VBB =
2V. Utilize as formulas propostas para realizao dos clculos.
a) Com o circuito alimentado corretamente e sem conectar o gerador de
funes e o osciloscpio, medir a corrente IC;
b) Conecte o canal 1 do osciloscpio no gerador de funes e ajuste a
freqncia para 1KHz, com forma de onda senoidal;
c) Conecte o gerador de funes juntamente com o canal 1 do
osciloscpio entrada do circuito (Vin) com seu ajuste de amplitude
em ZERO;
d) Conecte o canal 2 do osciloscpio na sada do circuito indicada como
Vout.
e) Comece a aumentar a amplitude do gerador at obter o melhor sinal de
sada amplificado, e sem distoro;
f) Anotar os valores corretos de amplitude encontrados;
g) Desenhar a forma de onda do canal 1 (Vin) e canal 2 (Vout) do
osciloscpio (entrada e sada respectivamente);
h) Mantendo o valor da amplitude encontrado, aumente gradativamente a
freqncia no gerador de funes at obter uma reduo do ganho de
sada do amplificador em 70,7% do valor mximo obtido no item f;
Relatrio:
Fazer relatrio detalhado (1 por aluno) mostrando todas as caractersticas e
concluses observadas nesta experincia, entregando-o na data estabelecida
para esta turma.
37
RB =
R1 R 2
R1 + R 2
V BB = 12
IB =
R2
R1 + R 2
V BB
RB
R L = 3,3 k
R E = 1k
38
Escala Volts/DIV
Canal1:_____________Ponta de Prova:_____
Canal1:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Canal2:_____________Ponta de Prova:_____
Escala Time/DIV
Escala Time/DIV
TIME/DIV:_____________
TIME/DIV:_____________
39
Cortar aqui
----------------------------------------------
1) Projeto:_______________________________________________
Visto:_______
40
41
43
Funcionamento
O primeiro passo para construo de uma fonte de alimentao saber qual a
tenso de sada que se deseja ter. Neste projeto de fonte possumos 2 tenses, 1
regulada e uma fixa de 5V/1A. A tenso regulada ser aborda mais frente.
Como a rede eltrica possui sua tenso eficaz muito mais alta que a grande
maioria dos equipamentos eletrnicos opera, necessitamos de um componente
que reduza este valor de tenso alternada. Como estamos considerando uma
fonte de alimentao linear utilizaremos um transformador, para realizar este
servio. O Diagrama em blocos da figura 1 representa esta seqncia.
Vout = Vref * (1 +
Pot
) + ( IADJ * P 2)
R1
45
Onde:
Vo- tenso de sada ;
Iadj corrente de ajuste.
POT Valor do potencimetro utilizado.
Atravs deste clculo, podemos alterar o valor de tenso mximo que o
regulador apresentar em sua sada. Este procedimento deve ser realizado com
bastante cuidado e ateno, pois sero necessrias alteraes de componentes do
circuito como:
46
47
49
Fone:____________________
Atendente:___________________________________
QTD DESCRIO DOS COMPONENTES E MATERIAIS
1
1
2
2
2
2
1
1
1
2
1
1
1
1
1
1
1
1
5
2
1
1
1
1
2
1
2
8
18
6
Preo
unitrio R$
50
http://onsemi.com
Mechanical Characteristics
CASE 5903
AXIAL LEAD
PLASTIC
MARKING DIAGRAM
AL
1N
400x
YYWW
AL
= Assembly Location
1N400x = Device Number
x
= 1, 2, 3, 4, 5, 6 or 7
YY
= Year
WW
= Work Week
MAXIMUM RATINGS
Rating
Symbol
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
Volts
VRSM
60
120
240
480
720
1000
1200
Volts
VR(RMS)
35
70
140
280
420
560
700
Volts
IO
1.0
Amp
IFSM
30 (for 1 cycle)
Amp
TJ
Tstg
65 to +175
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Typ
Max
Unit
vF
0.93
1.1
Volts
VF(AV)
0.8
Volts
0.05
1.0
10
50
30
IR
IR(AV)
Symbol
Package
Shipping
1N4001
Axial Lead
1000 Units/Bag
1N4001FF
Axial Lead
3000 Units/Box
1N4001RL
Axial Lead
1N4002
Axial Lead
1000 Units/Bag
1N4002FF
Axial Lead
3000 Units/Box
1N4002RL
Axial Lead
1N4003
Axial Lead
1000 Units/Bag
1N4003FF
Axial Lead
3000 Units/Box
1N4003RL
Axial Lead
1N4004
Axial Lead
1000 Units/Bag
1N4004FF
Axial Lead
3000 Units/Box
1N4004RL
Axial Lead
1N4005
Axial Lead
1000 Units/Bag
1N4005FF
Axial Lead
3000 Units/Box
1N4005RL
Axial Lead
1N4006
Axial Lead
1000 Units/Bag
1N4006FF
Axial Lead
3000 Units/Box
1N4006RL
Axial Lead
1N4007
Axial Lead
1000 Units/Bag
1N4007FF
Axial Lead
3000 Units/Box
1N4007RL
Axial Lead
http://onsemi.com
2
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
DIM
A
B
D
F
K
F
A
MILLIMETERS
MIN
MAX
4.07
5.20
2.04
2.71
0.71
0.86
--1.27
27.94
---
F
K
http://onsemi.com
3
INCHES
MIN
MAX
0.160
0.205
0.080
0.107
0.028
0.034
--0.050
1.100
---
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
CENTRAL/SOUTH AMERICA:
Spanish Phone: 3033087143 (MonFri 8:00am to 5:00pm MST)
Email: ONlitspanish@hibbertco.com
TollFree from Mexico: Dial 018002882872 for Access
then Dial 8662979322
ASIA/PACIFIC: LDC for ON Semiconductor Asia Support
Phone: 3036752121 (TueFri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
00180044223781
Email: ONlitasia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
http://onsemi.com
4
1N4001/D
1N4148 / 1N4448
FAST SWITCHING DIODE
Features
Mechanical Data
Case: DO-35
Leads: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.13 grams (approx.)
DO-35
Dim
Min
25.40
Max
4.00
0.60
2.00
All Dimensions in mm
Symbol
1N4148
Unit
100
VRRM
VRWM
VR
75
VR(RMS)
1N4448
VRM
53
IFM
IO
150
mA
IFSM
1.0
2.0
Pd
500
1.68
mW
mW/C
RqJA
300
K/W
Tj , TSTG
-65 to +175
Electrical Characteristics
300
500
mA
Characteristic
Symbol
Min
VFM
0.62
1.0
0.72
1.0
IF = 10mA
IF = 5.0mA
IF = 100mA
IRM
5.0
50
30
25
mA
mA
mA
nA
VR = 75V
VR = 70V, Tj = 150C
VR = 20V, Tj = 150C
VR = 20V
Capacitance
Cj
4.0
pF
VR = 0, f = 1.0MHz
trr
4.0
ns
IF = 10mA to IR =1.0mA
VR = 6.0V, RL = 100W
1N4148
1N4448
1N4448
Max
Unit
Test Condition
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
1 of 2
1N4148 / 1N4448
10,000
100
IR, LEAKAGE CURRENT (nA)
1000
10
1.0
0.1
1000
100
10
VR = 20V
0.01
0
2 of 2
100
200
1N4148 / 1N4448
BC548
BC548A
BC548B
BC548C
TO-92
C
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
30
VCES
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
5.0
IC
500
mA
TJ, Tstg
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
Characteristic
RJC
RJA
Max
Units
BC548 / A / B / C
625
5.0
83.3
mW
mW/C
C/W
200
C/W
548-ABC, Rev B
(continued)
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
IC = 10 mA, IB = 0
30
V(BR)CBO
IC = 10 A, IE = 0
30
V(BR)CES
IC = 10 A, IE = 0
30
V(BR)EBO
IE = 10 A, IC = 0
5.0
ICBO
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = +150 C
15
5.0
nA
A
800
220
450
800
0.25
0.60
0.70
0.77
V
V
V
V
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
VBE(on)
Base-Emitter On Voltage
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA
VCE = 5.0 V, IC = 2.0 mA
VCE = 5.0 V, IC = 10 mA
548
548A
548B
548C
110
110
200
420
0.58
NF
Noise Figure
125
900
10
dB
BC327/328
BC327/328
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC337/BC338
TO-92
Parameter
Collector-Emitter Voltage
: BC327
: BC328
Value
Units
-50
-30
V
V
-45
-25
V
V
Collector-Emitter Voltage
: BC327
: BC328
VCEO
VEBO
Emitter-Base Voltage
-5
IC
-800
mA
PC
625
mW
TJ
Junction Temperature
150
TSTG
Storage Temperature
-55 ~ 150
Parameter
Collector-Emitter Breakdown Voltage
: BC327
: BC328
Test Condition
IC= -10mA, IB=0
BVEBO
ICES
BVCES
hFE1
hFE2
Min.
Typ.
Units
-45
-25
V
V
-50
-30
V
V
-5
V
-2
-2
DC Current Gain
Max.
100
40
-100
-100
nA
nA
630
VCE (sat)
-0.7
VBE (on)
Base-Emitter On Voltage
-1.2
fT
100
MHz
Cob
Output Capacitance
12
pF
V
V
hFE Classification
Classification
16
25
40
hFE1
100 ~ 250
160 ~ 400
250 ~ 630
hFE2
60-
100-
170-
BC327/328
Typical Characteristics
-20
mA
- 5.0 A
I B = - 4.5m
I B = 4.0mA
A
I B = - 3.5m A
I B = - 3.0m A
I B = - 2.5m
mA
IB =
- 2.0
IB =
-400
-300
1.5
IB = -
IB=
-500
mA
-200
PT = 60
0mW
IB = - 1.0mA
IB = - 0.5mA
-100
A
- 80
A
- 70
I =
B
-16
IB=
A
- 60
IB=
-12
IB=
- 40
IB = -
-8
30A
0A
IB = - 2
-4
IB = - 10A
IB = 0
IB = 0
-0
-1
-2
-3
-4
-5
-10
PULSE
V CE = - 2.0V
100
- 1.0V
10
-1
-10
-100
-30
-40
-50
1000
1
-0.1
-20
-1000
-10
IC = 10 IB
PULSE
V CE(sat)
-1
-0.1
V BE(sat)
-0.01
-0.1
-1
-10
-100
-1000
-1000
1000
=6
00
mW
A
- 50
VCE = -1V
PULSE
-100
-10
-1
-0.1
-0.4
VCE = -5.0V
100
10
-0.5
-0.6
-0.7
-0.8
-0.9
-1
-10
-100
BC327/328
Package Dimensions
TO-92
+0.25
4.58 0.20
4.58 0.15
0.10
14.47 0.40
0.46
1.27TYP
[1.27 0.20]
1.27TYP
[1.27 0.20]
0.20
(0.25)
+0.10
0.38 0.05
1.02 0.10
3.86MAX
3.60
+0.10
0.38 0.05
(R2.29)
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx
FACT
ActiveArray
FACT Quiet series
Bottomless
FAST
FASTr
CoolFET
CROSSVOLT FRFET
GlobalOptoisolator
DOME
EcoSPARK
GTO
E2CMOS
HiSeC
EnSigna
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHER
SMART START
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
GENERAL
DATA
500 mW
DO-35 GLASS
500 Milliwatt
Hermetically Sealed
Glass Silicon Zener Diodes
Specification Features:
Complete Voltage Range 1.8 to 200 Volts
DO-204AH Package Smaller than Conventional DO-204AA Package
Double Slug Type Construction
Metallurgically Bonded Construction
Mechanical Characteristics:
CASE 299
DO-204AH
GLASS
Symbol
Value
Unit
500
4
mW
mW/C
65 to +200
PD
TJ, Tstg
0.7
HEAT
SINKS
0.6
0.5
0.4
3/8
3/8
0.3
0.2
0.1
0
20
40
60
80
100
120
140
160
180 200
300
2.460 V
200
62200 V
100
0
0.2
0.4
0.6
0.8
1000
7000
5000
2000
1000
700
500
200
I R , LEAKAGE CURRENT ( A)
V = VZTJ.
400
TJ = TL + TJL.
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
TJL = JLPD.
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ(TJ) may be estimated. Changes in
voltage, VZ, can then be found from:
500
100
70
50
20
10
7
5
2
1
0.7
0.5
+125C
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
+25C
0.002
0.001
10
11
12
13
14
15
(55C to +150C temperature range; 90% of the units are in the ranges indicated.)
+12
+10
+8
+6
+4
+2
RANGE
VZ @ IZT
(NOTE 2)
0
2
4
5
6
7
8
9
VZ, ZENER VOLTAGE (VOLTS)
10
11
12
100
70
50
30
20
3
2
1
10
200
180
160
140
VZ @ IZT
(NOTE 2)
100
120
130
140
150
160
170
180
190
20
+2
20 mA
0
0.01 mA
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
2
4
200
100
70
50
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
200
1 V BIAS
20
10
50% OF
VZ BIAS
0 V BIAS
50
TA = 25C
100
100
VZ @ IZ
TA = 25C
+4
500
70
+6
1000
30
50
VZ, ZENER VOLTAGE (VOLTS)
120
VZ @ IZ (NOTE 2)
RANGE
10
7
5
TA = 25C
0 BIAS
30
20
1 VOLT BIAS
10
7
5
50% OF VZ BIAS
3
2
1
1
10
20
50
100
120
140
160
180
190
200
220
RECTANGULAR
WAVEFORM
TJ = 25C PRIOR TO
INITIAL PULSE
11 V91 V NONREPETITIVE
30
5% DUTY CYCLE
20
10
7
5
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
10
20
50
100
200
500
1000
1000
500
1000
700
500
300
200
RECTANGULAR
WAVEFORM, TJ = 25C
100
70
50
30
20
10
7
5
3
2
1
0.01
200
47 V
100
27 V
50
20
6.2 V
10
5
2
1
0.1
10
100
0.1
1000
0.2
0.5
100
70
50
5 mA
20
20 mA
1000
TJ = 25C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
IZ = 1 mA
10
20
50
100
MAXIMUM
MINIMUM
500
I F , FORWARD CURRENT (mA)
1000
700
500
200
TJ = 25C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
VZ = 2.7 V
10
7
5
2
200
100
50
20
75C
10
25C
5 150C
0C
1
1
10
20
30
50
70 100
0.4
0.5
0.6
0.7
0.8
0.9
1.1
TA = 25
0.1
0.01
1
10
11
12
13
14
15
16
29
30
10
TA = 25
0.1
0.01
15
16
17
18
19
20
21
22
23
24
25
26
27
28
10
TA = 25
0.1
0.01
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
250
260
Figure 13. Zener Voltage versus Zener Current VZ = 30 thru 105 Volts
10
0.1
0.01
110
120
130
140
150
160
170
180
190
200
210
220
230
240
Figure 14. Zener Voltage versus Zener Current VZ = 110 thru 220 Volts
ELECTRICAL CHARACTERISTICS (TA = 25C, VF = 1.5 V Max at 200 mA for all types)
T
Type
Number
(Note 1)
Nominal
Zener Voltage
VZ @ IZT
(Note 2)
Volts
Test
Current
IZT
mA
Maximum
DC Zener Current
IZM
(Note 4)
mA
1N4370A
1N4371A
1N4372A
1N746A
1N747A
1N748A
2.4
2.7
3
3.3
3.6
3.9
20
20
20
20
20
20
30
30
29
28
24
23
1N749A
1N750A
1N751A
1N752A
1N753A
1N754A
4.3
4.7
5.1
5.6
6.2
6.8
20
20
20
20
20
20
1N755A
1N756A
1N757A
1N758A
1N759A
7.5
8.2
9.1
10
12
20
20
20
20
20
Type
Number
(Note 1)
Nominal
Zener Voltage
VZ
(Note 2)
Volts
Test
Current
IZT
mA
1N957B
1N958B
1N959B
1N960B
1N961B
1N962B
6.8
7.5
8.2
9.1
10
11
18.5
16.5
15
14
12.5
11.5
4.5
5.5
6.5
7.5
8.5
9.5
1N963B
1N964B
1N965B
1N966B
1N967B
1N968B
12
13
15
16
18
20
10.5
9.5
8.5
7.8
7
6.2
1N969B
1N970B
1N971B
1N972B
1N973B
1N974B
22
24
27
30
33
36
1N975B
1N976B
1N977B
1N978B
1N979B
1N980B
39
43
47
51
56
62
TA = 150C
IR @ VR = 1 V
A
150
135
120
110
100
95
100
75
50
10
10
10
200
150
100
30
30
30
22
19
17
11
7
5
85
75
70
65
60
55
2
2
1
1
0.1
0.1
30
30
20
20
20
20
6
8
10
17
30
50
45
40
35
30
0.1
0.1
0.1
0.1
0.1
20
20
20
20
20
Maximum
DC Zener Current
IZM
(Note 4)
mA
IR Maximum
A
700
700
700
700
700
700
1
0.5
0.5
0.5
0.25
0.25
47
42
38
35
32
28
150
75
50
25
10
5
5.2
5.7
6.2
6.9
7.6
8.4
11.5
13
16
17
21
25
700
700
700
700
750
750
0.25
0.25
0.25
0.25
0.25
0.25
26
24
21
19
17
15
5
5
5
5
5
5
9.1
9.9
11.4
12.2
13.7
15.2
5.6
5.2
4.6
4.2
3.8
3.4
29
33
41
49
58
70
750
750
750
1000
1000
1000
0.25
0.25
0.25
0.25
0.25
0.25
14
13
11
10
9.2
8.5
5
5
5
5
5
5
16.7
18.2
20.6
22.8
25.1
27.4
3.2
3
2.7
2.5
2.2
2
80
93
105
125
150
185
1000
1500
1500
1500
2000
2000
0.25
0.25
0.25
0.25
0.25
0.25
7.8
7
6.4
5.9
5.4
4.9
5
5
5
5
5
5
29.7
32.7
35.8
38.8
42.6
47.1
Type
Number
(Note 1)
Nominal
Zener Voltage
VZ
(Note 2)
Volts
Test
Current
IZT
mA
1N981B
1N982B
1N983B
1N984B
1N985B
1N986B
68
75
82
91
100
110
1.8
1.7
1.5
1.4
1.3
1.1
230
270
330
400
500
750
1N987B
1N988B
1N989B
1N990B
1N991B
1N992B
120
130
150
160
180
200
1
0.95
0.85
0.8
0.68
0.65
900
1100
1500
1700
2200
2500
IZK
mA
Maximum
DC Zener Current
IZM
(Note 4)
mA
2000
2000
3000
3000
3000
4000
0.25
0.25
0.25
0.25
0.25
0.25
4500
5000
6000
6500
7100
8000
0.25
0.25
0.25
0.25
0.25
0.25
4.5
4.1
3.7
3.3
3
2.7
5
5
5
5
5
5
51.7
56
62.2
69.2
76
83.6
2.5
2.3
2
1.9
1.7
1.5
5
5
5
5
5
5
91.2
98.8
114
121.6
136.8
152
Tolerance Designation
The type numbers shown have tolerance designations as follows:
1N4370A series: 5% units, C for 2%, D for 1%.
1N746A series: 5% units, C for 2%, D for 1%.
1N957B series: 5% units, C for 2%, D for 1%.
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
Nominal zener voltage is measured with the device junction in thermal equilibrium at the lead
temperature of 30C 1C and 3/8 lead length.
ELECTRICAL CHARACTERISTICS (TA = 25C, VF = 1.5 V Max at IF = 100 mA for all types)
Zener Voltage
VZ @ IZT = 50 A
Volts
Maximum
Reverse Current
IR A
Test
Voltage
VR Volts
Maximum
Zener Current
IZM mA
(Note 2)
Maximum
Voltage Change
VZ Volts
(Note 4)
1
1
1
1
1
120
110
100
95
90
0.7
0.7
0.75
0.8
0.85
0.8
7.5
7.5
5
4
1
1.5
2
2
2
85
80
75
70
65
0.9
0.95
0.95
0.97
0.99
4.935
5.355
5.88
6.51
7.14
10
10
10
10
10
3
3
4
5
5.1
60
55
50
45
35
0.99
0.97
0.96
0.95
0.9
7.125
7.79
8.265
8.645
9.5
7.875
8.61
9.135
9.555
10.5
10
1
1
1
1
5.7
6.2
6.6
6.9
7.6
31.8
29
27.4
26.2
24.8
0.75
0.5
0.1
0.08
0.1
11
12
13
14
15
10.45
11.4
12.35
13.3
14.25
11.55
12.6
13.65
14.7
15.75
0.05
0.05
0.05
0.05
0.05
8.4
9.1
9.8
10.6
11.4
21.6
20.4
19
17.5
16.3
0.11
0.12
0.13
0.14
0.15
1N4703
1N4704
1N4705
1N4706
1N4707
16
17
18
19
20
15.2
16.15
17.1
18.05
19
16.8
17.85
18.9
19.95
21
0.05
0.05
0.05
0.05
0.01
12.1
12.9
13.6
14.4
15.2
15.4
14.5
13.2
12.5
11.9
0.16
0.17
0.18
0.19
0.2
1N4708
1N4709
1N4710
1N4711
1N4712
22
24
25
27
28
20.9
22.8
23.75
25.65
26.6
23.1
25.2
26.25
28.35
29.4
0.01
0.01
0.01
0.01
0.01
16.7
18.2
19
20.4
21.2
10.8
9.9
9.5
8.8
8.5
0.22
0.24
0.25
0.27
0.28
1N4713
1N4714
1N4715
1N4716
1N4717
30
33
36
39
43
28.5
31.35
34.2
37.05
40.85
31.5
34.65
37.8
40.95
45.15
0.01
0.01
0.01
0.01
0.01
22.8
25
27.3
29.6
32.6
7.9
7.2
6.6
6.1
5.5
0.3
0.33
0.36
0.39
0.43
Type
Number
(Note 1)
Nom (Note 1)
Min
Max
1N4678
1N4679
1N4680
1N4681
1N4682
1.8
2
2.2
2.4
2.7
1.71
1.9
2.09
2.28
2.565
1.89
2.1
2.31
2.52
2.835
7.5
5
4
2
1
1N4683
1N4684
1N4685
1N4686
1N4687
3
3.3
3.6
3.9
4.3
2.85
3.135
3.42
3.705
4.085
3.15
3.465
3.78
4.095
4.515
1N4688
1N4689
1N4690
1N4691
1N4692
4.7
5.1
5.6
6.2
6.8
4.465
4.845
5.32
5.89
6.46
1N4693
1N4694
1N4695
1N4696
1N4697
7.5
8.2
8.7
9.1
10
1N4698
1N4699
1N4700
1N4701
1N4702
(Note 3)
Reverse leakage currents are guaranteed and measured at VR as shown on the table.
The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage,
C for 2%, D for 1%.
Maximum Zener current ratings are based on maximum Zener voltage of the individual units
and JEDEC 250 mW rating.
Nominal Zener voltage is measured with the device junction in thermal equilibrium at the lead
temperature at 30C 1C and 3/8 lead length.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted. Based on dc measurements at thermal equilibrium; lead length
= 3/8; thermal resistance of heat sink = 30C/W) VF = 1.1 Max @ IF = 200 mA for all types.
JEDEC
Type No.
(Note 1)
Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 3)
Test
Current
IZT
mA
ZZT @ IZT
Ohms
IR
A
VR
Volts
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
2.4
2.5
2.7
2.8
3
20
20
20
20
20
30
30
30
30
29
1200
1250
1300
1400
1600
100
100
75
75
50
1
1
1
1
1
0.085
0.085
0.08
0.08
0.075
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
3.3
3.6
3.9
4.3
4.7
20
20
20
20
20
28
24
23
22
19
1600
1700
1900
2000
1900
25
15
10
5
5
1
1
1
1
2
0.07
0.065
0.06
0.055
0.03
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
5.1
5.6
6
6.2
6.8
20
20
20
20
20
17
11
7
7
5
1600
1600
1600
1000
750
5
5
5
5
3
2
3
3.5
4
5
0.03
+0.038
+0.038
+0.045
+0.05
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
7.5
8.2
8.7
9.1
10
20
20
20
20
20
6
8
8
10
17
500
500
600
600
600
3
3
3
3
3
6
6.5
6.5
7
8
+0.058
+0.062
+0.065
+0.068
+0.075
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
11
12
13
14
15
20
20
9.5
9
8.5
22
30
13
15
16
600
600
600
600
600
2
1
0.5
0.1
0.1
8.4
9.1
9.9
10
11
+0.076
+0.077
+0.079
+0.082
+0.082
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
16
17
18
19
20
7.8
7.4
7
6.6
6.2
17
19
21
23
25
600
600
600
600
600
0.1
0.1
0.1
0.1
0.1
12
13
14
14
15
+0.083
+0.084
+0.085
+0.086
+0.086
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
22
24
25
27
28
5.6
5.2
5
4.6
4.5
29
33
35
41
44
600
600
600
600
600
0.1
0.1
0.1
0.1
0.1
17
18
19
21
21
+0.087
+0.088
+0.089
+0.09
+0.091
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
30
33
36
39
43
4.2
3.8
3.4
3.2
3
49
58
70
80
93
600
700
700
800
900
0.1
0.1
0.1
0.1
0.1
23
25
27
30
33
+0.091
+0.092
+0.093
+0.094
+0.095
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
47
51
56
60
62
2.7
2.5
2.2
2.1
2
105
125
150
170
185
1000
1100
1300
1400
1400
0.1
0.1
0.1
0.1
0.1
36
39
43
46
47
+0.095
+0.096
+0.096
+0.097
+0.097
Max Reverse
Leakage Current
(continued)
ELECTRICAL CHARACTERISTICS continued (TA = 25C unless otherwise noted. Based on dc measurements at thermal equilibrium; lead length = 3/8; thermal resistance of heat sink = 30C/W) VF = 1.1 Max @ IF = 200 mA for all types.
JEDEC
Type No.
(Note 1)
Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 3)
Test
Current
IZT
mA
ZZT @ IZT
Ohms
IR
A
VR
Volts
1N5266B
1N5267B
1N5268B
1N5269B
1N5270B
68
75
82
87
91
1.8
1.7
1.5
1.4
1.4
230
270
330
370
400
1600
1700
2000
2200
2300
0.1
0.1
0.1
0.1
0.1
52
56
62
68
69
+0.097
+0.098
+0.098
+0.099
+0.099
1N5271B
1N5272B
1N5273B
1N5274B
1N5275B
100
110
120
130
140
1.3
1.1
1
0.95
0.9
500
750
900
1100
1300
2600
3000
4000
4500
4500
0.1
0.1
0.1
0.1
0.1
76
84
91
99
106
+0.11
+0.11
+0.11
+0.11
+0.11
1N5276B
1N5277B
1N5278B
1N5279B
1N5280B
1N5281B
150
160
170
180
190
200
0.85
0.8
0.74
0.68
0.66
0.65
1500
1700
1900
2200
2400
2500
5000
5500
5500
6000
6500
7000
0.1
0.1
0.1
0.1
0.1
0.1
114
122
129
137
144
152
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
NOTE 1. TOLERANCE
The JEDEC type numbers shown indicate a tolerance of 5%. For tighter tolerance devices
use suffixes C for 2% and D for 1%.
NOTE 2. TEMPERATURE COEFFICIENT (VZ)
Test conditions for temperature coefficient are as follows:
a. IZT = 7.5 mA, T1 = 25C,
a. T2 = 125C (1N5221B through 1N5242B).
b. IZT = Rated IZT, T1 = 25C,
a. T2 = 125C (1N5243B through 1N5281B).
Device to be temperature stabilized with current applied prior to reading breakdown voltage
at the specified ambient temperature.
Max Reverse
Leakage Current
For more information on special selections contact your nearest Motorola representative.
*ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted.) (VF = 1.5 Volts Max @ IF = 100 mAdc for all types.)
Motorola
Type
Number
(Note 1)
Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 4)
Test
Current
IZT
mA
VR
Volts
Max DC
Zener
Current
IZM
(Note 2)
ZZT @ IZT
Ohms
ZZK @ IZK =
Ohms 0.25 mA
IR
A
1N5985B
1N5986B
1N5987B
1N5988B
1N5989B
2.4
2.7
3
3.3
3.6
5
5
5
5
5
100
100
95
95
90
1800
1900
2000
2200
2300
100
75
50
25
15
1
1
1
1
1
208
185
167
152
139
1N5990B
1N5991B
1N5992B
1N5993B
1N5994B
3.9
4.3
4.7
5.1
5.6
5
5
5
5
5
90
88
70
50
25
2400
2500
2200
2050
1800
10
5
3
2
2
1
1
1.5
2
3
128
116
106
98
89
1N5995B
1N5996B
1N5997B
1N5998B
1N5999B
6.2
6.8
7.5
8.2
9.1
5
5
5
5
5
10
8
7
7
10
1300
750
600
600
600
1
1
0.5
0.5
0.1
4
5.2
6
6.5
7
81
74
67
61
55
1N6000B
1N6001B
1N6002B
1N6003B
1N6004B
10
11
12
13
15
5
5
5
5
5
15
18
22
25
32
600
600
600
600
600
0.1
0.1
0.1
0.1
0.1
8
8.4
9.1
9.9
11
50
45
42
38
33
1N6005B
1N6006B
1N6007B
1N6008B
1N6009B
16
18
20
22
24
5
5
5
5
5
36
42
48
55
62
600
600
600
600
600
0.1
0.1
0.1
0.1
0.1
12
14
15
17
18
31
28
25
23
21
1N6010B
1N6011B
1N6012B
1N6013B
1N6014B
27
30
33
36
39
5
5
5
5
2
70
78
88
95
130
600
600
700
700
800
0.1
0.1
0.1
0.1
0.1
21
23
25
27
30
19
17
15
14
13
1N6015B
1N6016B
1N6017B
1N6018B
1N6019B
43
47
51
56
62
2
2
2
2
2
150
170
180
200
225
900
1000
1300
1400
1400
0.1
0.1
0.1
0.1
0.1
33
36
39
43
47
12
11
9.8
8.9
8
1N6020B
1N6021B
1N6022B
1N6023B
1N6024B
1N6025B
68
75
82
91
100
110
2
2
2
2
1
1
240
265
280
300
500
650
1600
1700
2000
2300
2600
3000
0.1
0.1
0.1
0.1
0.1
0.1
52
56
62
69
76
84
7.4
6.7
6.1
5.5
5
4.5
NOTE 3.
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz.
NOTE 2.
This data was calculated using nominal voltages. The maximum current handling capability
on a worst case basis is limited by the actual zener voltage at the operating point and the power derating curve.
NOTE 4.
Nominal Zener Voltage (VZ) is measured with the device junction in thermal equilibrium at the
lead temperature of 30C 1C and 3/8 lead length.
ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted.) (VF = 1.3 Volts Max, IF = 100 mAdc for all types.)
Max Reverse
Leakage Current
IR at VR
(A)
Motorola
Type
Number
Min
(Note 1)
Max
(Note 1)
Max Zener
Impedance
(Note 3)
ZZT @ IZT
(Ohms)
Max
BZX55C2V4RL
BZX55C2V7RL
BZX55C3V0RL
BZX55C3V3RL
BZX55C3V6RL
2.28
2.5
2.8
3.1
3.4
2.56
2.9
3.2
3.5
3.8
85
85
85
85
85
5
5
5
5
5
50
10
4
2
2
100
50
40
40
40
1
1
1
1
1
155
135
125
115
105
BZX55C3V9RL
BZX55C4V3RL
BZX55C4V7RL
BZX55C5V1RL
BZX55C5V6RL
3.7
4
4.4
4.8
5.2
4.1
4.6
5
5.4
6
85
75
60
35
25
5
5
5
5
5
2
1
0.5
0.1
0.1
40
20
10
2
2
1
1
1
1
1
95
90
85
80
70
BZX55C6V2RL
BZX55C6V8RL
BZX55C7V5RL
BZX55C8V2RL
BZX55C9V1RL
5.8
6.4
7
7.7
8.5
6.6
7.2
7.9
8.7
9.6
10
8
7
7
10
5
5
5
5
5
0.1
0.1
0.1
0.1
0.1
2
2
2
2
2
2
3
5
6
7
64
58
53
47
43
BZX55C10RL
BZX55C11RL
BZX55C12RL
BZX55C13RL
BZX55C15RL
9.4
10.4
11.4
12.4
13.8
10.6
11.6
12.7
14.1
15.6
15
20
20
26
30
5
5
5
5
5
0.1
0.1
0.1
0.1
0.1
2
2
2
2
2
7.5
8.5
9
10
11
40
36
32
29
27
BZX55C16RL
BZX55C18RL
BZX55C20RL
BZX55C22RL
BZX55C24RL
15.3
16.8
18.8
20.8
22.8
17.1
19.1
21.1
23.3
25.6
40
50
55
55
80
5
5
5
5
5
0.1
0.1
0.1
0.1
0.1
2
2
2
2
2
12
14
15
17
18
24
21
20
18
16
BZX55C27RL
BZX55C30RL
BZX55C33RL
BZX55C36RL
BZX55C39RL
25.1
28
31
34
37
28.9
32
35
38
41
80
80
80
80
90
5
5
5
5
2.5
0.1
0.1
0.1
0.1
0.1
2
2
2
2
5
20
22
24
27
28
14
13
12
11
10
BZX55C43RL
BZX55C47RL
BZX55C51RL
BZX55C56RL
BZX55C62RL
40
44
48
52
58
46
50
54
60
66
90
110
125
135
150
2.5
2.5
2.5
2.5
2.5
0.1
0.1
0.1
0.1
0.1
5
5
10
10
10
32
35
38
42
47
9.2
8.5
7.8
7
6.4
BZX55C68RL
BZX55C75RL
BZX55C82RL
BZX55C91RL
64
70
77
85
72
80
87
96
160
170
200
250
2.5
2.5
2.5
1
0.1
0.1
0.1
0.1
10
10
10
10
51
56
62
69
5.9
5.3
4.8
4.3
VZT at IZT
(V)
IZT
(mA)
Tamb
25C
Max
Tamb
125C
Max
VR
(V)
IZM
(mA)
(Note 2)
on a worst case basis is limited by the actual zener voltage at the operating point and the power derating curve.
NOTE 3.
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limtis are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz.
This data was calculated using nominal voltages. The maximum current handling capability
*ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted.) (VF = 1.5 Volts Max @ IF = 100 mAdc for all types.)
Impedance (Ohm)
@ IZT
f = 1000 Hz
Temp. Coefficient
(Typical)
(mV/C)
Device
D
i Type
T
(Note 2)
Min
Max
IZT =
(mA)
Max
(Note 3)
Max
@ VR =
(Volt)
Min
Max
Capacitance
(Typical)
(pF)
VR = 0,
f = 1.0 MHz
BZX79C2V4RL
BZX79C2V7RL
BZX79C3V0RL
BZX79C3V3RL
BZX79C3V6RL
2.2
2.5
2.8
3.1
3.4
2.6
2.9
3.2
3.5
3.8
5
5
5
5
5
100
100
95
95
90
100
75
50
25
15
1
1
1
1
1
3.5
3.5
3.5
3.5
3.5
0
0
0
0
0
255
230
215
200
185
BZX79C3V9RL
BZX79C4V3RL
BZX79C4V7RL
BZX79C5V1RL
BZX79C5V6RL
3.7
4
4.4
4.8
5.2
4.1
4.6
5
5.4
6
5
5
5
5
5
90
90
80
60
40
10
5
3
2
1
1
1
2
2
2
3.5
3.5
3.5
2.7
2
+0.3
+1
+0.2
+1.2
+2.5
175
160
130
110
95
BZX79C6V2RL
BZX79C6V8RL
BZX79C7V5RL
BZX79C8V2RL
BZX79C9V1RL
5.8
6.4
7
7.7
8.5
6.6
7.2
7.9
8.7
9.6
5
5
5
5
5
10
15
15
15
15
3
2
1
0.7
0.5
4
4
5
5
6
0.4
1.2
2.5
3.2
3.8
3.7
4.5
5.3
6.2
7
90
85
80
75
70
BZX79C10RL
BZX79C11RL
BZX79C12RL
BZX79C13RL
BZX79C15RL
9.4
10.4
11.4
12.4
13.8
10.6
11.6
12.7
14.1
15.6
5
5
5
5
5
20
20
25
30
30
0.2
0.1
0.1
0.1
0.05
7
8
8
8
10.5
4.5
5.4
6
7
9.2
8
9
10
11
13
70
65
65
60
55
BZX79C16RL
BZX79C18RL
BZX79C20RL
BZX79C22RL
BZX79C24RL
15.3
16.8
18.8
20.8
22.8
17.1
19.1
21.2
23.3
25.6
5
5
5
5
5
40
45
55
55
70
0.05
0.05
0.05
0.05
0.05
11.2
12.6
14
15.4
16.8
10.4
12.9
14.4
16.4
18.4
14
16
18
20
22
52
47
36
34
33
BZX79C27RL
BZX79C30RL
BZX79C33RL
BZX79C36RL
BZX79C39RL
25.1
28
31
34
37
28.9
32
35
38
41
2
2
2
2
2
80
80
80
90
130
0.05
0.05
0.05
0.05
0.05
18.9
21
23.1
25.2
27.3
23.5
26
29
31
34
30
27
25
23
21
BZX79C43RL
BZX79C47RL
BZX79C51RL
BZX79C56RL
BZX79C62RL
40
44
48
52
58
46
50
54
60
66
2
2
2
2
2
150
170
180
200
215
0.05
0.05
0.05
0.05
0.05
30.1
32.9
35.7
39.2
43.4
37
40
44
47
51
21
19
19
18
17
BZX79C68RL
BZX79C75RL
BZX79C82RL
BZX79C91RL
BZX79C100RL
64
70
77
85
94
72
79
87
96
106
2
2
2
2
1
240
255
280
300
500
0.05
0.05
0.1
0.1
0.1
47.6
52.5
62
69
76
46
51
57
56
60
95
107
119
17
16.5
29
28
27
BZX79C110RL
BZX79C120RL
BZX79C130RL
BZX79C150RL
BZX79C160RL
104
114
124
138
153
116
127
141
156
171
1
1
1
1
1
650
800
950
1250
1400
0.1
0.1
0.1
0.1
0.1
84
91
99
114
122
63
69
75
87
93
131
144
158
185
200
26
24
23
21
20
BZX79C180RL
BZX79C200RL
168
188
191
212
1
1
1700
2000
0.1
0.1
137
152
105
120
228
255
18
17
Zener Voltage
(Note 1)
(Note 4)
Leakage Current
(A)
NOTE 1. Zener voltage is measured under pulse conditions such that TJ is no more than 2C
above TA.
NOTE 3. ZZT is measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz.
Tolerance designation The type numbers listed have zener voltage min/max limits as
Impedance ()
Max (Note 2)
VR Min
Nominal
Min
Max
at IZT
BZX83
ZPD
Typ.
yp Temp.
p
C ff
Coeff.
at IZT
% per C
at IZ = 1 mA
Device Type
V
BZX83
ZPD
at IR
BZX83C2V7RL
BZX83C3V0RL
BZX83C3V3RL
BZX83C3V6RL
BZX83C3V9RL
ZPD2.7RL
ZPD3.0RL
ZPD3.3RL
ZPD3.6RL
ZPD3.9RL
2.7
3
3.3
3.6
3.9
2.5
2.8
3.1
3.4
3.7
2.9
3.2
3.5
3.8
4.1
85
90
90
90
85
600
600
600
600
600
500
500
500
500
500
0.09...0.04
0.09...0.03
0.08...0.03
0.08...0.03
0.07...0.03
1
1
1
1
1
100 mA
160 mA
130 mA
120 mA
110 mA
BZX83C4V3RL
BZX83C4V7RL
BZX83C5V1RL
BZX83C5V6RL
BZX83C6V2RL
ZPD4.3RL
ZPD4.7RL
ZPD5.1RL
ZPD5.6RL
ZPD6.2RL
4.3
4.7
5.1
5.6
6.2
4
4.4
4.8
5.2
5.8
4.6
5
5.4
6
6.6
80
78
60
40
10
600
600
550
450
500
500
480
400
1
1
200
0.06...0.01
0.05...+0.02
0.03...+0.04
0.02...+0.06
0.01...+0.07
0.8
1
2
115 mA
112 mA
100 nA
100 nA
100 nA
BZX83C6V8RL
BZX83C7V5RL
BZX83C8V2RL
BZX83C9V1RL
BZX83C10RL
ZPD6.8RL
ZPD7.5RL
ZPD8.2RL
ZPD9.1RL
ZPD10RL
6.8
7.5
8.2
9.1
10
6.4
7
7.7
8.5
9.4
7.2
7.9
8.7
9.6
10.6
8
7
7
10
15
150
50
50
50
70
+0.02...+0.07
+0.03...+0.07
+0.04...+0.07
+0.05...+0.08
+0.05...+0.08
3
5
6
7
7.5
100 nA
100 nA
100 nA
100 nA
100 nA
BZX83C11RL
BZX83C12RL
BZX83C13RL
BZX83C15RL
BZX83C16RL
ZPD11RL
ZPD12RL
ZPD13RL
ZPD15RL
ZPD16RL
11
12
13
15
16
10.4
11.4
12.4
13.8
15.3
11.6
12.7
14.1
15.6
17.1
20
20
25
30
40
70
90
110
110
170
+0.05...+0.09
+0.06...+0.09
+0.07...+0.09
+0.07...+0.09
+0.08...+0.095
8.5
9
10
11
12
100 nA
100 nA
100 nA
100 nA
100 nA
BZX83C18RL
BZX83C20RL
BZX83C22RL
BZX83C24RL
BZX83C27RL
BZX83C30RL
BZX83C33RL
ZPD18RL
ZPD20RL
ZPD22RL
ZPD24RL
ZPD27RL
ZPD30RL
ZPD33RL
18
20
22
24
27
30
33
16.8
18.8
20.8
22.8
25.1
28
31
19.1
21.2
23.3
25.6
28.9
32
35
50
55
55
80
80
80
80
170
220
220
220
250
250
250
+0.08...+0.10
+0.08...+0.10
+0.08...+0.10
+0.08...+0.10
+0.08...+0.10
+0.08...+0.10
+0.08...+0.10
14
15
17
18
20
22
24
100 nA
100 nA
100 nA
100 nA
100 nA
100 nA
100 nA
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified. IZT = 250 A and VF = 1 V Max @ IF = 200 mA for all
ELECTRICAL CHARACTERISTICS types)
Type
Number
(Note 1)
Nominal
Zener Voltage
VZ
(Note 2)
(Volts)
Max Zener
Impedance
ZZT
(Note 3)
(Ohms)
Max
Reverse
Current
IR
(A)
MZ4614
MZ4615
MZ4616
MZ4617
MZ4618
1.8
2
2.2
2.4
2.7
1200
1250
1300
1400
1500
MZ4619
MZ4620
MZ4621
MZ4622
MZ4623
3
3.3
3.6
3.9
4.3
MZ4624
MZ4625
MZ4626
MZ4627
MZ4099
MZ4100
MZ4101
MZ4102
MZ4103
MZ4104
Test
Voltage
VR
(Volts)
7.5
5
4
2
1
1
1
1
1
1
120
110
100
95
90
1600
1650
1700
1650
1600
0.8
7.5
7.5
5
4
1
1.5
2
2
2
85
80
75
70
65
4.7
5.1
5.6
6.2
6.8
1550
1500
1400
1200
200
10
10
10
10
10
3
3
4
5
5.2
60
55
50
45
35
7.5
8.2
8.7
9.1
10
200
200
200
200
200
10
1
1
1
1
5.7
6.3
6.7
7
7.6
31.8
29
27.4
26.2
24.8
@
(Note 5)
M
l
Motorola
Type No.
(Note 1)
Nominal
Zener
Voltage
VZ @ IZT
Volts
(Note 2)
MZ5520B
MZ5521B
MZ5522B
MZ5523B
MZ5524B
MZ5525B
MZ5526B
MZ5527B
MZ5528B
MZ5529B
MZ5530B
VR Volts
Maximum
DC Zener
Current
IZM
mAdc
(Note 5)
Regulation
Factor
VZ
Volts
(Note 6)
Low
VZ
Current
IZL
mAdc
1
3
2
2
2
1
1.5
2
2.5
3.5
98
88
81
75
68
0.85
0.75
0.6
0.65
0.3
2.0
2.0
1.0
0.25
0.25
1
1
0.5
0.5
0.1
0.05
5
6.2
6.8
7.5
8.2
9.1
61
56
51
46
42
38
0.2
0.1
0.05
0.05
0.05
0.1
0.01
0.01
0.01
0.01
0.01
0.01
Max Zener
Impedance
ZZT @ IZT
Ohms
(Note 3)
IR
Adc
(Note 4)
3.9
4.3
4.7
5.1
5.6
20
20
10
5
3
22
18
22
26
30
6.2
6.8
7.5
8.2
9.1
10
1
1
1
1
1
1
30
30
35
40
45
60
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
it applies only to the B suffix device. The actual IZM for any device may not exceed the value
of 400 milliwatts divided by the actual VZ of the device.
NOTES:
1. PACKAGE CONTOUR OPTIONAL WITHIN A AND B
HEAT SLUGS, IF ANY, SHALL BE INCLUDED
WITHIN THIS CYLINDER, BUT NOT SUBJECT TO
THE MINIMUM LIMIT OF B.
2. LEAD DIAMETER NOT CONTROLLED IN ZONE F
TO ALLOW FOR FLASH, LEAD FINISH BUILDUP
AND MINOR IRREGULARITIES OTHER THAN
HEAT SLUGS.
3. POLARITY DENOTED BY CATHODE BAND.
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B
D
F
DIM
A
B
D
F
K
MILLIMETERS
MIN
MAX
3.05
5.08
1.52
2.29
0.46
0.56
1.27
25.40
38.10
INCHES
MIN
MAX
0.120 0.200
0.060 0.090
0.018 0.022
0.050
1.000 1.500
CASE 299-02
DO-204AH
GLASS
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MPQ (Units)
RL, RL2(1)
5K
TA, TA2(1)
5K
GENERAL
DATA
11.3 WATT
DO-41 GLASS
1 WATT
ZENER REGULATOR
DIODES
3.3100 VOLTS
Specification Features:
Complete Voltage Range 3.3 to 100 Volts
DO-41 Package
Double Slug Type Construction
Metallurgically Bonded Construction
Oxide Passivated Die
Mechanical Characteristics:
CASE: Double slug type, hermetically sealed glass
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230C, 1/16 from
case for 10 seconds
FINISH: All external surfaces are corrosion resistant with readily solderable leads
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION: Any
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea
CASE 59-03
DO-41
GLASS
MAXIMUM RATINGS
Rating
DC Power Dissipation @ TA = 50C
Derate above 50C
Operating and Storage Junction Temperature Range
Symbol
Value
Unit
PD
1
6.67
Watt
mW/C
TJ, Tstg
65 to +200
1.25
L = 1
L = 1/8
L = LEAD LENGTH
TO HEAT SINK
L = 3/8
0.75
0.5
0.25
20
40
60
80 100 120 140 160
TL, LEAD TEMPERATURE (C)
180
200
RANGE
0
2
4
2
5
6
7
8
9
VZ, ZENER VOLTAGE (VOLTS)
10
11
12
100
70
50
30
20
RANGE
10
7
5
VZ @ IZT
3
2
1
10
20
30
50
VZ, ZENER VOLTAGE (VOLTS)
70
100
175
150
125
100
75
50
25
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.9
VZ @ IZ
TA = 25C
+4
+2
20 mA
0
0.01 mA
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
2
4
100
70
50
30
0.8
+6
RECTANGULAR
WAVEFORM
TJ = 25C PRIOR TO
INITIAL PULSE
11 V100 V NONREPETITIVE
5% DUTY CYCLE
20
10
7
5
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
PW, PULSE WIDTH (ms)
10
20
50
100
200
500
1000
1000
500
1000
700
500
TJ = 25C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
VZ = 2.7 V
200
47 V
100
27 V
50
20
10
6.2 V
5
2
IZ = 1 mA
200
100
70
50
5 mA
20
20 mA
10
7
5
2
1
0.1
0.2
0.5
1
2
5
10
IZ, ZENER CURRENT (mA)
20
50
100
5
7 10
20 30
VZ, ZENER CURRENT (mA)
50
70 100
10000
7000
5000
400
300
200
1000
700
500
0 V BIAS
100
C, CAPACITANCE (pF)
2000
200
100
70
50
I R , LEAKAGE CURRENT ( A)
TJ = 25C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
1 V BIAS
50
20
10
8
20
4
10
7
5
5
10
20
VZ, NOMINAL VZ (VOLTS)
50
100
1000
500
+125C
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
+25C
0.002
MINIMUM
MAXIMUM
200
100
50
20
75C
10
25C
5 150C
0C
0.001
1
3
10
11
12
13
14
15
0.4
0.5
0.6
0.7
0.8
0.9
1.1
*ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 1.2 V Max, IF = 200 mA for all types.
JEDEC
Type No.
(Note 1)
Nominal
Zener Voltage
VZ @ IZT
Volts
(Notes 2 and 3)
Test
Current
IZT
mA
ZZT @ IZT
Ohms
ZZK @ IZK
Ohms
IZK
mA
IR
A Max
VR
Volts
Surge Current @
TA = 25C
ir mA
(Note 5)
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
3.3
3.6
3.9
4.3
4.7
76
69
64
58
53
10
10
9
9
8
400
400
400
400
500
1
1
1
1
1
100
100
50
10
10
1
1
1
1
1
1380
1260
1190
1070
970
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
5.1
5.6
6.2
6.8
7.5
49
45
41
37
34
7
5
2
3.5
4
550
600
700
700
700
1
1
1
1
0.5
10
10
10
10
10
1
2
3
4
5
890
810
730
660
605
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
8.2
9.1
10
11
12
31
28
25
23
21
4.5
5
7
8
9
700
700
700
700
700
0.5
0.5
0.25
0.25
0.25
10
10
10
5
5
6
7
7.6
8.4
9.1
550
500
454
414
380
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
13
15
16
18
20
19
17
15.5
14
12.5
10
14
16
20
22
700
700
700
750
750
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
9.9
11.4
12.2
13.7
15.2
344
304
285
250
225
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
22
24
27
30
33
11.5
10.5
9.5
8.5
7.5
23
25
35
40
45
750
750
750
1000
1000
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
16.7
18.2
20.6
22.8
25.1
205
190
170
150
135
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
36
39
43
47
51
7
6.5
6
5.5
5
50
60
70
80
95
1000
1000
1500
1500
1500
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
27.4
29.7
32.7
35.8
38.8
125
115
110
95
90
1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4763A
1N4764A
56
62
68
75
82
91
100
4.5
4
3.7
3.3
3
2.8
2.5
110
125
150
175
200
250
350
2000
2000
2000
2000
3000
3000
3000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
5
5
42.6
47.1
51.7
56
62.2
69.2
76
80
70
65
60
55
50
45
Leakage Current
The JEDEC type numbers listed have a standard tolerance on the nominal zener voltage of
5%. C for 2%, D for 1%.
The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed
on IZT or IZK.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) (VF = 1.2 V Max, IF = 200 mA for all types.)
Zener Voltage
VZT (V)
(Notes 2 and 3)
Zener Impedance
ZZ (ohms)
(Note 4)
Leakage
Current
(A)
(mA)
VR (V)
IR
Max
Surge
Current
TA = 25
25C
C
ir (mA)
(Note 5)
400
500
500
500
600
1
1
1
1
1
1
1
1
1
1.5
60
30
5
3
3
1380
1260
1190
1070
970
10
7
4
3.5
3
500
400
300
300
200
1
1
1
1
0.5
2
2
3
4
4.5
1
1
1
1
1
890
810
730
660
605
25
25
25
20
20
5
5
7
8
9
200
200
200
300
350
0.5
0.5
0.5
0.5
0.5
5
6.5
7
7.7
8.4
1
1
0.5
0.5
0.5
550
500
454
414
380
14.1
15.6
17.1
19.1
21.2
20
15
15
15
10
10
15
15
20
24
400
500
500
500
600
0.5
0.5
0.5
0.5
0.5
9.1
10.5
11
12.5
14
0.5
0.5
0.5
0.5
0.5
344
304
285
250
225
20.8
22.8
25.1
28
31
23.3
25.6
28.9
32
35
10
10
8
8
8
25
25
30
30
35
600
600
750
1000
1000
0.5
0.5
0.25
0.25
0.25
15.5
17
19
21
23
0.5
0.5
0.5
0.5
0.5
205
190
170
150
135
BZX85C36RL
BZX85C39RL
BZX85C43RL
BZX85C47RL
BZX85C51RL
34
37
40
44
48
38
41
46
50
54
8
6
6
4
4
40
45
50
90
115
1000
1000
1000
1500
1500
0.25
0.25
0.25
0.25
0.25
25
27
30
33
36
0.5
0.5
0.5
0.5
0.5
125
115
110
95
90
BZX85C56RL
BZX85C62RL
BZX85C68RL
BZX85C75RL
BZX85C82RL
52
58
64
70
77
60
66
72
80
87
4
4
4
4
2.7
120
125
130
150
200
2000
2000
2000
2000
3000
0.25
0.25
0.25
0.25
0.25
39
43
47
51
56
0.5
0.5
0.5
0.5
0.5
80
70
65
60
55
BZX85C91RL
BZX85C100RL
85
96
96
106
2.7
2.7
250
350
3000
3000
0.25
0.25
62
68
0.5
0.5
50
45
T
Type
(Note 1)
VZ
Min
VZ
Max
Test
C
Current
t
IZT
(mA)
BZX85C3V3RL
BZX85C3V6RL
BZX85C3V9RL
BZX85C4V3RL
BZX85C4V7RL
3.1
3.4
3.7
4
4.4
3.5
3.8
4.1
4.6
5
80
60
60
50
45
20
15
15
13
13
BZX85C5V1RL
BZX85C5V6RL
BZX85C6V2RL
BZX85C6V8RL
BZX85C7V5RL
4.8
5.2
5.8
6.4
7
5.4
6
6.6
7.2
7.9
45
45
35
35
35
BZX85C8V2RL
BZX85C9V1RL
BZX85C10RL
BZX85C11RL
BZX85C12RL
7.7
8.5
9.4
10.4
11.4
8.7
9.6
10.6
11.6
12.7
BZX85C13RL
BZX85C15RL
BZX85C16RL
BZX85C18RL
BZX85C20RL
12.4
13.8
15.3
16.8
18.8
BZX85C22RL
BZX85C24RL
BZX85C27RL
BZX85C30RL
BZX85C33RL
Max
at IZT
Max at IZ
Nominal zener voltages between the voltages shown and tighter voltage tolerances.
For detailed information on price, availability, and delivery, contact your nearest Motorola representative.
The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current IZT. However, actual device capability is as described
in Figure 5 of General Data DO-41 glass.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 1.2 V Max, IF = 200 mA for all types.
VZ Max
Test Current
IZT
(mA)
Typ
Max
IR = 1 A
Surge
Current
TA = 25C
ir (ma)
(Note 5)
3.7
4
4.4
4.8
5.2
4.1
4.6
5
5.4
6
100
100
100
100
100
4
4
4
2
1
7
7
7
5
2
0.7
1.5
1190
1070
970
890
810
MZPY6.2RL
MZPY6.8RL
MZPY7.5RL
MZPY8.2RL
MZPY9.1RL
5.8
6.4
7
7.7
8.5
6.6
7.2
7.9
8.7
9.6
100
100
100
100
50
1
1
1
1
2
2
2
2
2
4
2
3
5
6
7
730
660
605
550
500
MZPY10RL
MZPY11RL
MZPY12RL
MZPY13RL
MZPY15RL
9.4
10.4
11.4
12.4
14.2
10.6
11.6
12.7
14.1
15.8
50
50
50
50
50
2
3
3
4
4
4
7
7
9
9
7.5
8.5
9
10
11
454
414
380
344
304
MZPY16RL
MZPY18RL
MZPY20RL
MZPY22RL
MZPY24RL
15.3
16.8
18.8
20.8
22.8
17.1
19.1
21.2
23.3
25.6
25
25
25
25
25
5
5
6
7
8
10
11
12
13
14
12
14
15
17
18
285
250
225
205
190
MZPY27RL
MZPY30RL
MZPY33RL
MZPY36RL
MZPY39RL
25.1
28
31
34
37
28.9
32
35
38
41
25
25
25
10
10
9
10
11
25
30
15
20
20
60
60
20
22.5
25
27
29
170
150
135
125
115
MZPY43RL
MZPY47RL
MZPY51RL
MZPY56RL
MZPY62RL
40
44
48
52
58
46
50
54
60
66
10
10
10
10
10
35
40
45
50
60
80
80
100
100
130
32
35
38
42
47
110
95
90
80
70
MZPY68RL
MZPY75RL
MZPY82RL
MZPY91RL
MZPY100RL
64
70
77
85
94
72
79
88
96
106
10
10
10
5
5
65
70
80
120
130
130
160
160
250
250
51
56
61
68
75
65
60
55
50
45
VZ Min
MZPY3.9RL
MZPY4.3RL
MZPY4.7RL
MZPY5.1RL
MZPY5.6RL
Zener Impedance
(Note 4)
f = 1 kHz (ohms)
Blocking
Volt Min (V)
Nominal zener voltages between the voltages shown and tighter voltage tolerances.
For detailed information on price, availability, and delivery, contact your nearest Motorola representative.
The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current IZT, however, actual device capability is as described
in Figure 5 of General Data DO-41 glass.
B
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
K
F
DIM
A
B
D
F
K
A
F
K
MILLIMETERS
MIN
MAX
4.07
5.20
2.04
2.71
0.71
0.86
1.27
27.94
INCHES
MIN
MAX
0.160 0.205
0.080 0.107
0.028 0.034
0.050
1.100
CASE 59-03
DO-41
GLASS
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MPQ (Units)
RL, RL2
6K
TA, TA2
4K
GENERAL
DATA
13 WATT
DO-41
SURMETIC 30
1 to 3 Watt Surmetic 30
Silicon Zener Diodes
1 TO 3 WATT
ZENER REGULATOR
DIODES
3.3400 VOLTS
. . . a complete series of 1 to 3 Watt Zener Diodes with limits and operating characteristics
that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an
axial-lead, transfer-molded plastic package offering protection in all common environmental conditions.
Specification Features:
Surge Rating of 98 Watts @ 1 ms
Maximum Limits Guaranteed On Up To Six Electrical Parameters
Package No Larger Than the Conventional 1 Watt Package
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION: Any
WEIGHT: 0.4 gram (approx)
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea
CASE 59-03
DO-41
PLASTIC
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
PD
Watts
24
mW/C
PD
1
6.67
Watt
mW/C
TJ, Tstg
65 to +200
5
L = 1/8
L = LEAD LENGTH
TO HEAT SINK
4
L = 3/8
3
L = 1
20
40
60
80 100 120 140 160
TL, LEAD TEMPERATURE (C)
180
200
30
20
10
7
5
3
2
1
0.7
0.5
D =0.5
0.2
0.1
t2
DUTY CYCLE, D =t1/t2
0.02
0.01
D=0
0.3
0.0001 0.0002
t1
PPK
0.05
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
t, TIME (SECONDS)
0.1
0.2
10
1K
RECTANGULAR
NONREPETITIVE
WAVEFORM
TJ = 25C PRIOR
TO INITIAL PULSE
500
300
200
100
50
30
20
10
0.1
1
2 3
5
10
PW, PULSE WIDTH (ms)
20 30 50
100
3
2
1
0.5
TA = 125C
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0005
0.0003
TA = 125C
10
20
50 100
NOMINAL VZ (VOLTS)
200
400
1000
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order
to calculate its value. The following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = LA PD + TA
LA is the lead-to-ambient thermal resistance (C/W) and
PD is the power dissipation. The value for LA will vary and
depends on the device mounting method. LA is generally
3040C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by:
TJ = TL + TJL
500 mW DO-35 Glass Data Sheet
6-124
2
0
2
4
3
6
7
8
9
10
VZ, ZENER VOLTAGE @ IZT (VOLTS)
11
12
200
100
50
20
10
10
20
50
100
200
400
VZ, ZENER VOLTAGE @ IZT (VOLTS)
1000
50
30
20
50
30
20
(Figures 7, 8 and 9)
100
10
5
3
2
1
0.5
0.3
0.2
0.1
3
4
5
6
7
VZ, ZENER VOLTAGE (VOLTS)
10
10
5
3
2
1
0.5
0.3
0.2
0.1
0
10
10
2
1
0.5
0.2
0.1
100
150
200
250
300
350
VZ, ZENER VOLTAGE (VOLTS)
30
40
50
60
70
80
VZ, ZENER VOLTAGE (VOLTS)
90
100
400
20
80
70
60
50
L
40
30
TL
20
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
10
0
1/8
1/4
3/8
1/2
5/8
3/4
L, LEAD LENGTH TO HEAT SINK (INCH)
7/8
*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
PD
1.5
12
Watts
mW/C
*ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted. VF = 1.5 Volts Max @ lF = 200 mAdc for all types.)
Motorola
Type
Number
(Note 1)
Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 2 and 3)
Test
Current
IZT
mA
ZZT @ IZT
Ohms
ZZK
Ohms
1N5913B
1N5914B
1N5915B
1N5916B
1N5917B
3.3
3.6
3.9
4.3
4.7
113.6
104.2
96.1
87.2
79.8
10
9
7.5
6
5
1N5918B
1N5919B
1N5920B
1N5921B
1N5922B
5.1
5.6
6.2
6.8
7.5
73.5
66.9
60.5
55.1
50
1N5923B
1N5924B
1N5925B
1N5926B
1N5927B
8.2
9.1
10
11
12
1N5928B
1N5929B
1N5930B
1N5931B
1N5932B
Max. Reverse
Leakage Current
IZK
mA
IR
A
500
500
500
500
500
1
1
1
1
1
100
75
25
5
5
1
1
1
1
1.5
454
416
384
348
319
4
2
2
2.5
3
350
250
200
200
400
1
1
1
1
0.5
5
5
5
5
5
2
3
4
5.2
6
294
267
241
220
200
45.7
41.2
37.5
34.1
31.2
3.5
4
4.5
5.5
6.5
400
500
500
550
550
0.5
0.5
0.25
0.25
0.25
5
5
5
1
1
6.5
7
8
8.4
9.1
182
164
150
136
125
13
15
16
18
20
28.8
25
23.4
20.8
18.7
7
9
10
12
14
550
600
600
650
650
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
9.9
11.4
12.2
13.7
15.2
115
100
93
83
75
1N5933B
1N5934B
1N5935B
1N5936B
1N5937B
22
24
27
30
33
17
15.6
13.9
12.5
11.4
17.5
19
23
26
33
650
700
700
750
800
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
16.7
18.2
20.6
22.8
25.1
68
62
55
50
45
1N5938B
1N5939B
1N5940B
1N5941B
1N5942B
36
39
43
47
51
10.4
9.6
8.7
8
7.3
38
45
53
67
70
850
900
950
1000
1100
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
27.4
29.7
32.7
35.8
38.8
41
38
34
31
29
1N5943B
1N5944B
1N5945B
1N5946B
1N5947B
56
62
68
75
82
6.7
6
5.5
5
4.6
86
100
120
140
160
1300
1500
1700
2000
2500
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
42.6
47.1
51.7
56
62.2
26
24
22
20
18
@ VR
Volts
Maximum DC
Zener
Current
IZM
mAdc
(continued)
*Indicates JEDEC Registered Data.
*ELECTRICAL CHARACTERISTICS continued (TL = 30C unless otherwise noted. VF = 1.5 Volts Max @ lF = 200 mAdc for all
types.)
Motorola
Type
Number
(Note 1)
Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 2 and 3)
Test
Current
IZT
mA
ZZT @ IZT
Ohms
ZZK
Ohms
1N5948B
1N5949B
1N5950B
1N5951B
1N5952B
91
100
110
120
130
4.1
3.7
3.4
3.1
2.9
200
250
300
380
450
1N5953B
1N5954B
1N5955B
1N5956B
150
160
180
200
2.5
2.3
2.1
1.9
600
700
900
1200
Max. Reverse
Leakage Current
IZK
mA
IR
A
3000
3100
4000
4500
5000
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
69.2
76
83.6
91.2
98.8
16
15
13
12
11
6000
6500
7000
8000
0.25
0.25
0.25
0.25
1
1
1
1
114
121.6
136.8
152
10
9
8
7
@ VR
Volts
Maximum DC
Zener
Current
IZM
mAdc
The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed
on IZT or IZK.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 1.5 V Max, IF = 200 mA for all types)
Motorola
Type No.
(Note 1)
Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 2)
Test
Current
IZT
mA
Maximum
Zener
Current
IZM
mA
Surge
Current
@ TA = 25C
ir mA
(Note 4)
ZZT @ IZT
Ohms
ZZK @ IZK
Ohms
IZK
mA
3EZ3.9D5
3EZ4.3D5
3EZ4.7D5
3EZ5.1D5
3.9
4.3
4.7
5.1
192
174
160
147
4.5
4.5
4
3.5
400
400
500
550
1
1
1
1
80
30
20
5
1
1
1
1
630
590
550
520
4.4
4.1
3.8
3.5
3EZ5.6D5
3EZ6.2D5
3EZ6.8D5
3EZ7.5D5
5.6
6.2
6.8
7.5
134
121
110
100
2.5
1.5
2
2
600
700
700
700
1
1
1
0.5
5
5
5
5
2
3
4
5
480
435
393
360
3.3
3.1
2.9
2.66
3EZ8.2D5
3EZ9.1D5
3EZ10D5
3EZ11D5
8.2
9.1
10
11
91
82
75
68
2.3
2.5
3.5
4
700
700
700
700
0.5
0.5
0.25
0.25
5
3
3
1
6
7
7.6
8.4
330
297
270
245
2.44
2.2
2
1.82
3EZ12D5
3EZ13D5
3EZ14D5
3EZ15D5
12
13
14
15
63
58
53
50
4.5
4.5
5
5.5
700
700
700
700
0.25
0.25
0.25
0.25
1
0.5
0.5
0.5
9.1
9.9
10.6
11.4
225
208
193
180
1.66
1.54
1.43
1.33
3EZ16D5
3EZ17D5
3EZ18D5
3EZ19D5
16
17
18
19
47
44
42
40
5.5
6
6
7
700
750
750
750
0.25
0.25
0.25
0.25
0.5
0.5
0.5
0.5
12.2
13
13.7
14.4
169
159
150
142
1.25
1.18
1.11
1.05
3EZ20D5
3EZ22D5
3EZ24D5
3EZ27D5
20
22
24
27
37
34
31
28
7
8
9
10
750
750
750
750
0.25
0.25
0.25
0.25
0.5
0.5
0.5
0.5
15.2
16.7
18.2
20.6
135
123
112
100
1
0.91
0.83
0.74
3EZ28D5
3EZ30D5
3EZ33D5
3EZ36D5
28
30
33
36
27
25
23
21
12
16
20
22
750
1000
1000
1000
0.25
0.25
0.25
0.25
0.5
0.5
0.5
0.5
21
22.5
25.1
27.4
96
90
82
75
0.71
0.67
0.61
0.56
3EZ39D5
3EZ43D5
3EZ47D5
3EZ51D5
39
43
47
51
19
17
16
15
28
33
38
45
1000
1500
1500
1500
0.25
0.25
0.25
0.25
0.5
0.5
0.5
0.5
29.7
32.7
35.6
38.8
69
63
57
53
0.51
0.45
0.42
0.39
3EZ56D5
3EZ62D5
3EZ68D5
3EZ75D5
56
62
68
75
13
12
11
10
50
55
70
85
2000
2000
2000
2000
0.25
0.25
0.25
0.25
0.5
0.5
0.5
0.5
42.6
47.1
51.7
56
48
44
40
36
0.36
0.32
0.29
0.27
3EZ82D5
3EZ91D5
3EZ100D5
3EZ110D5
82
91
100
110
9.1
8.2
7.5
6.8
95
115
160
225
3000
3000
3000
4000
0.25
0.25
0.25
0.25
0.5
0.5
0.5
0.5
62.2
69.2
76
83.6
33
30
27
25
0.24
0.22
0.2
0.18
3EZ120D5
3EZ130D5
3EZ140D5
3EZ150D5
120
130
140
150
6.3
5.8
5.3
5
300
375
475
550
4500
5000
5000
6000
0.25
0.25
0.25
0.25
0.5
0.5
0.5
0.5
91.2
98.8
106.4
114
22
21
19
18
0.16
0.15
0.14
0.13
3EZ160D5
3EZ170D5
3EZ180D5
3EZ190D5
160
170
180
190
4.7
4.4
4.2
4
625
650
700
800
6500
7000
7000
8000
0.25
0.25
0.25
0.25
0.5
0.5
0.5
0.5
121.6
130.4
136.8
144.8
17
16
15
14
0.12
0.12
0.11
0.1
Leakage
Current
IR @ VR
A Max
Volts
(continued)
ELECTRICAL CHARACTERISTICS continued (TA = 25C unless otherwise noted) VF = 1.5 V Max, IF = 200 mA for all types)
Motorola
Type No.
(Note 1)
Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 2)
Test
Current
IZT
mA
ZZT @ IZT
Ohms
ZZK @ IZK
Ohms
IZK
mA
3EZ200D5
3EZ220D5
3EZ240D5
3EZ270D5
200
220
240
270
3.7
3.4
3.1
2.8
875
1600
1700
1800
8000
9000
9000
9000
0.25
0.25
0.25
0.25
0.5
1
1
1
3EZ300D5
3EZ330D5
3EZ360D5
3EZ400D5
300
330
360
400
2.5
2.3
2.1
1.9
1900
2200
2700
3500
9000
9000
9000
9000
0.25
0.25
0.25
0.25
1
1
1
1
NOTE 1. TOLERANCES
Suffix 5 indicates 5% tolerance. Any other tolerance will be considered as a special device.
NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT
Motorola guarantees the zener voltage when measured at 40 ms 10 ms 3/8 from the diode
body, and an ambient temperature of 25C (+8C, 2C)
Maximum
Zener
Current
IZM
mA
Surge
Current
@ TA = 25C
ir mA
(Note 4)
152
167
182
205
13
12
11
10
0.1
0.09
0.09
0.08
228
251
274
304
9
8
8
7
0.07
0.06
0.06
0.06
Leakage
Current
IR @ VR
A Max
Volts
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) VF = 1.5 V Max, IF = 200 mA for all types.
Type No.
(Note 1)
Min
Max
Test
Current
IZT
mA
MZD3.9
MZD4.3
MZD4.7
MZD5.1
MZD5.6
3.7
4
4.4
4.8
5.2
4.1
4.6
5
5.4
6
MZD6.2
MZD6.8
MZD7.5
MZD8.2
MZD9.1
5.8
6.4
7
7.7
8.5
MZD10
MZD11
MZD12
MZD13
MZD15
Zener Voltage
(Note 2)
Surge Current
@ TL = 25C
ir mA
(Note 3)
Typ
Max
Blocking Voltage
IR = 1 A
Typical
TC
%/C
100
100
100
100
100
3.8
3.8
3.8
2
1
7
7
7
5
2
1.5
0.06
+0.055
+0.03
+0.03
+0.038
1380
1260
1190
1070
970
6.6
7.2
7.9
8.7
9.6
100
100
100
100
50
1
1
1
1
2
2
2
2
2
4
1.5
2
2
3.5
3.5
+0.045
+0.05
+0.058
+0.062
+0.068
890
810
730
660
605
9.4
10.4
11.4
12.4
13.8
10.6
11.6
12.7
14.1
15.8
50
50
50
50
50
2
4
4
5
5
4
7
7
10
10
5
5
7
7
10
+0.075
+0.076
+0.077
+0.079
+0.082
550
500
454
414
380
MZD16
MZD18
MZD20
MZD22
MZD24
15.3
16.8
18.8
20.8
22.8
17.1
19.1
21.2
23.3
25.6
25
25
25
25
25
6
6
6
6
7
15
15
15
15
15
10
10
10
12
12
+0.083
+0.085
+0.086
+0.087
+0.088
344
304
285
250
225
MZD27
MZD30
MZD33
MZD36
MZD39
25.1
28
31
34
37
28.9
32
35
38
41
25
25
25
10
10
7
8
8
21
21
15
15
15
40
40
14
14
17
17
20
+0.09
+0.091
+0.092
+0.093
+0.094
205
190
170
150
135
MZD43
MZD47
MZD51
MZD56
MZD62
40
44
48
52
58
46
50
54
60
66
10
10
10
10
10
24
24
25
25
25
45
45
60
60
80
20
24
24
28
28
+0.095
+0.095
+0.096
+0.096
+0.097
125
115
110
95
90
MZD68
MZD75
MZD82
MZD91
MZD100
64
70
77
85
94
72
79
88
96
106
10
10
10
5
5
25
30
30
60
60
80
100
100
200
200
34
34
41
41
50
+0.097
+0.098
+0.098
+0.099
+0.11
80
70
65
60
55
MZD110
MZD120
MZD130
MZD150
MZD160
104
114
124
138
153
116
127
141
156
171
5
5
5
5
5
80
80
110
110
150
250
250
300
300
350
50
60
60
75
75
+0.11
+0.11
+0.11
+0.11
+0.11
50
45
MZD180
MZD200
168
188
191
212
5
5
150
150
350
350
90
90
+0.11
+0.11
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 1.5 V Max, lF = 200 mA for all types
Motorola
Type No.
(Note 1)
Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 2)
VR
Volts
Surge
Current
@ TA = 25C
ir mA
(Note 4)
Test Current
IZT
mA
ZZT @ IZT
Ohms
ZZK @ IZK
Ohms
IZK
mA
MZP4728A
MZP4729A
MZP4730A
MZP4731A
MZP4732A
3.3
3.6
3.9
4.3
4.7
76
69
64
58
53
10
10
9
9
8
400
400
400
400
500
1
1
1
1
1
100
100
50
10
10
1
1
1
1
1
1380
1260
1190
1070
970
MZP4733A
MZP4734A
MZP4735A
MZP4736A
MZP4737A
5.1
5.6
6.2
6.8
7.5
49
45
41
37
34
7
5
2
3.5
4
550
600
700
700
700
1
1
1
1
0.5
10
10
10
10
10
1
2
3
4
5
890
810
730
660
605
MZP4738A
MZP4739A
MZP4740A
MZP4741A
MZP4742A
8.2
9.1
10
11
12
31
28
25
23
21
4.5
5
7
8
9
700
700
700
700
700
0.5
0.5
0.25
0.25
0.25
10
10
10
5
5
6
7
7.6
8.4
9.1
550
500
454
414
380
MZP4743A
MZP4744A
MZP4745A
MZP4746A
MZP4747A
13
15
16
18
20
19
17
15.5
14
12.5
10
14
16
20
22
700
700
700
750
750
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
9.9
11.4
12.2
13.7
15.2
344
304
285
250
225
MZP4748A
MZP4749A
MZP4750A
MZP4751A
MZP4752A
22
24
27
30
33
11.5
10.5
9.5
8.5
7.5
23
25
35
40
45
750
750
750
1000
1000
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
16.7
18.2
20.6
22.8
25.1
205
190
170
150
135
MZP4753A
MZP4754A
MZP4755A
MZP4756A
MZP4757A
36
39
43
47
51
7
6.5
6
5.5
5
50
60
70
80
95
1000
1000
1500
1500
1500
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
27.4
29.7
32.7
35.8
38.8
125
115
110
95
90
MZP4758A
MZP4759A
MZP4760A
MZP4761A
MZP4762A
56
62
68
75
82
4.5
4
3.7
3.3
3
110
125
150
175
200
2000
2000
2000
2000
3000
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
42.6
47.1
51.7
56
62.2
80
70
65
60
55
MZP4763A
MZP4764A
1M110ZS5
1M120ZS5
1M130ZS5
91
100
110
120
130
2.8
2.5
2.3
2
1.9
250
350
450
550
700
3000
3000
4000
4500
5000
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
69.2
76
83.6
91.2
98.8
50
45
1M150ZS5
1M160ZS5
1M180ZS5
1M200ZS5
150
160
180
200
1.7
1.6
1.4
1.2
1000
1100
1200
1500
6000
6500
7000
8000
0.25
0.25
0.25
0.25
5
5
5
5
114
121.6
136.8
152
Leakage
Current
IR
@
A Max
current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed
on IZT or IZK.
NOTE 4. SURGE CURRENT (ir) NON-REPETITIVE
The rating listed in the electrical characteristics table is maximum peak, non-repetitive,
reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second
duration superimposed on the test current, IZT, however, actual device capability is as
described in Figure 3 of General Data Surmetic 30.
NOTE 5. SPECIAL SELECTIONS AVAILABLE INCLUDE:
Nominal zener voltages between those shown. Tight voltage tolerances such as 1% and
2%. Consult factory.
B
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
K
F
DIM
A
B
D
F
K
A
F
K
MILLIMETERS
MIN
MAX
4.07
5.20
2.04
2.71
0.71
0.86
1.27
27.94
INCHES
MIN
MAX
0.160 0.205
0.080 0.107
0.028 0.034
0.050
1.100
CASE 59-03
DO-41
PLASTIC
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MPQ (Units)
RL
6K
TA
4K
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
1N5333B
through
1N5388B
5 Watt Surmetic 40
Silicon Zener Diodes
This is a complete series of 5 Watt Zener Diodes with tight limits and better operating
characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.
All this is in an axial-lead, transfer-molded plastic package that offers protection in all common environmental conditions.
5 WATT
ZENER REGULATOR
DIODES
3.3200 VOLTS
Specification Features:
CASE 17
PLASTIC
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
PD
Watts
40
mW/C
65 to +200
TJ, Tstg
8
L = LEAD LENGTH
L = TO HEAT SINK
L = (SEE FIGURE 5)
L = 1/8
6
L = 3/8
4
L = 1
2
0
0
20
40
60
80
100
120
140
160
180
200
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.2 Max @ IF = 1 A for all types)
JEDEC
Type No.
(Note 1)
Nominal
Zener
Voltage
VZ @ IZT
Volts
(Note 2)
Test
Current
IZT
mA
ZZT @IZT
Ohms
(Note 2)
ZZK @ IZK = 1 mA
Ohms
(Note 2)
IR
A
1N5333B
1N5334B
1N5335B
1N5336B
1N5337B
3.3
3.6
3.9
4.3
4.7
380
350
320
290
260
3
2.5
2
2
2
400
500
500
500
450
1N5338B
1N5339B
1N5340B
1N5341B
1N5342B
5.1
5.6
6
6.2
6.8
240
220
200
200
175
1.5
1
1
1
1
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
7.5
8.2
8.7
9.1
10
175
150
150
150
125
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
11
12
13
14
15
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
Max Reverse
Leakage Current
Maximum
Regulator
Current
Max Voltage
IZM
Regulation
mA
VZ, Volt
(Note 5)
(Note 4)
VR
Volts
Max
Surge
Current
ir, Amps
(Note 3)
300
150
50
10
5
1
1
1
1
1
20
18.7
17.6
16.4
15.3
0.85
0.8
0.54
0.49
0.44
1440
1320
1220
1100
1010
400
400
300
200
200
1
1
1
1
10
1
2
3
3
5.2
14.4
13.4
12.7
12.4
11.5
0.39
0.25
0.19
0.1
0.15
930
865
790
765
700
1.5
1.5
2
2
2
200
200
200
150
125
10
10
10
7.5
5
5.7
6.2
6.6
6.9
7.6
10.7
10
9.5
9.2
8.6
0.15
0.2
0.2
0.22
0.22
630
580
545
520
475
125
100
100
100
75
2.5
2.5
2.5
2.5
2.5
125
125
100
75
75
5
2
1
1
1
8.4
9.1
9.9
10.6
11.5
8
7.5
7
6.7
6.3
0.25
0.25
0.25
0.25
0.25
430
395
365
340
315
16
17
18
19
20
75
70
65
65
65
2.5
2.5
2.5
3
3
75
75
75
75
75
1
0.5
0.5
0.5
0.5
12.2
12.9
13.7
14.4
15.2
6
5.8
5.5
5.3
5.1
0.3
0.35
0.4
0.4
0.4
295
280
265
250
237
1N5358B
1N5359B
1N5360B
1N5361B
1N5362B
22
24
25
27
28
50
50
50
50
50
3.5
3.5
4
5
6
75
100
110
120
130
0.5
0.5
0.5
0.5
0.5
16.7
18.2
19
20.6
21.2
4.7
4.4
4.3
4.1
3.9
0.45
0.55
0.55
0.6
0.6
216
198
190
176
170
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
30
33
36
39
43
40
40
30
30
30
8
10
11
14
20
140
150
160
170
190
0.5
0.5
0.5
0.5
0.5
22.8
25.1
27.4
29.7
32.7
3.7
3.5
3.3
3.1
2.8
0.6
0.6
0.65
0.65
0.7
158
144
132
122
110
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
47
51
56
60
62
25
25
20
20
20
25
27
35
40
42
210
230
280
350
400
0.5
0.5
0.5
0.5
0.5
35.8
38.8
42.6
42.5
47.1
2.7
2.5
2.3
2.2
2.1
0.8
0.9
1
1.2
1.35
100
93
86
79
76
1N5373B
1N5374B
1N5375B
1N5376B
1N5377B
68
75
82
87
91
20
20
15
15
15
44
45
65
75
75
500
620
720
760
760
0.5
0.5
0.5
0.5
0.5
51.7
56
62.2
66
69.2
2
1.9
1.8
1.7
1.6
1.5
1.6
1.8
2
2.2
70
63
58
54.5
52.5
1N5378B
1N5379B
1N5380B
1N5381B
1N5382B
100
110
120
130
140
12
12
10
10
8
90
125
170
190
230
800
1000
1150
1250
1500
0.5
0.5
0.5
0.5
0.5
76
83.6
91.2
98.8
106
1.5
1.4
1.3
1.2
1.2
2.5
2.5
2.5
2.5
2.5
47.5
43
39.5
36.6
34
(continued)
ELECTRICAL CHARACTERISTICS continued (TA = 25C unless otherwise noted, VF = 1.2 Max @ IF = 1 A for all types)
JEDEC
Type No.
(Note 1)
Nominal
Zener
Voltage
VZ @ IZT
Volts
(Note 2)
Test
Current
IZT
mA
ZZT @IZT
Ohms
(Note 2)
ZZK @ IZK = 1 mA
Ohms
(Note 2)
IR
A
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
1N5388B
150
160
170
180
190
200
8
8
8
5
5
5
330
350
380
430
450
480
1500
1650
1750
1750
1850
1850
0.5
0.5
0.5
0.5
0.5
0.5
Max Reverse
Leakage Current
VR
Volts
Max
Surge
Current
ir, Amps
(Note 3)
114
122
129
137
144
152
1.1
1.1
1
1
0.9
0.9
Maximum
Regulator
Current
Max Voltage
IZM
Regulation
mA
VZ, Volt
(Note 5)
(Note 4)
3
3
3
4
5
5
31.6
29.4
28
26.4
25
23.6
Test conditions for voltage regulation are as follows: VZ measurements are made at 10% and
then at 50% of the IZ max value listed in the electrical characteristics table. The test current
time duration for each VZ measurement is 40 10 ms. (TA = 25C +8, 2C). Mounting contact
located as specified in Note 2.
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 10 ms prior
to reading. Mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips
to the body of the diode. (TA = 25C +8, 2C).
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
it applies only to the B-suffix device. The actual IZM for any device may not exceed the value
of 5 watts divided by the actual VZ of the device. TL = 75C at 3/8 maximum from the device
body.
300
200
10
VZ , TEMPERATURE COEFFICIENT
(mV/C) @ I ZT
VZ , TEMPERATURE COEFFICIENT
(mV/C) @ I ZT
TEMPERATURE COEFFICIENTS
100
6
4
2
RANGE
0
2
3
7
5
6
8
VZ, ZENER VOLTAGE @ IZT (VOLTS)
10
RANGE
50
30
20
10
5
0
20
40
200 220
20
10
D = 0.5
D = 0.2
2
1
PPK
t1
D = 0.1
t2
D = 0.05
D = 0.01
0.5
D=0
0.2
0.00
1
0.01
0.05
0.1
0.5
10
20
50
100
t, TIME (SECONDS)
40
40
i r , PEAK SURGE CURRENT (AMPS)
30
20
L
10
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0
0.2
0.4
0.6
0.8
L, LEAD LENGTH TO HEAT SINK (INCH)
20
PW = 1 ms*
10
PW = 8.3 ms*
4
2
1
0.4
*SQUARE WAVE
0.2
0.1
PW = 1000 ms*
3
8 10
20
30
40
60 80 100
200
NOMINAL VZ (V)
30
20
T = 25C
10
1000
VZ = 3.3 V
I Z , ZENER CURRENT (mA)
PW = 100 ms*
5
2
1
0.5
VZ = 200 V
PLOTTED FROM INFORMATION
GIVEN IN FIGURE 6
0.2
0.1
TC = 25C
100
10
1
0.1
10
100
PW, PULSE WIDTH (ms)
100
0
4
5
6
7
8
VZ, ZENER VOLTAGE (VOLTS)
10
1000
T = 25C
100
10
0.1
100
10
0.1
10
20
30
40
50
60
VZ, ZENER VOLTAGE (VOLTS)
70
80
80
100
120
140
160
180
VZ, ZENER VOLTAGE (VOLTS)
200
220
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order
to calculate its value. The following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = LA PD + TA
LA is the lead-to-ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL + TJL
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 5 for dc power.
TJL = JL PD
B
NOTE:
1. LEAD DIAMETER & FINISH NOT CONTROLLED
WITHIN DIM F.
D
K
2
DIM
A
B
D
F
K
INCHES
MIN
MAX
0.330 0.350
0.130 0.145
0.037 0.043
0.050
1.000 1.250
MILLIMETERS
MIN
MAX
8.38
8.89
3.30
3.68
0.94
1.09
1.27
25.40 31.75
F
K
CASE 17-02
PLASTIC
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MPQ (Units)
RL
4K
TA
2K
Chaves ticas
PASTILHA
AlGaAs Emissor
NPN Fototransistor
ATUAO
Refletiva
ELEMENTOS
Emissor Hialino
Sensor Fume
ESPECIFICAES TCNICAS
If = 100mA
If = 20mA
Vr = 4V
1,3V
1,2V
1,7V
1,5V
10A
9,70,2
If = 100mA
940nm
Ic = 100A
Ib = 0
Ie = 100A
Ib = 0
Vce = 10V
Vce = 5V
If = 40mA
5,10,2
18,350,4
Tenso Reversa
(Vf)
Corrente Reversa
(If)
Comprimento de
onda
TensodeRuptura
C E (Vbceo)
Tenso deRuptura
E C (Vbeco)
Corrente Escuro
(Iceo)
Corrente Claro
(IL)
30V
5V
0,1A
50A
10,00,4
Ponto indica o Fototransistor
CHAVE DE CODIGO
C 7L3
3,80,2
18,10,2
Min.
.6
R1
OUT
Mx.
Cond. Teste
2,650,2
IN
Tp.
Parmetro
LM117/217
LM317
DESCRIPTION
The LM117/LM217/LM317 are
monolithic
integrated circuit in TO-220, ISOWATT220, TO-3
and D2PAK packages intended for use as
positive adjustable voltage regulators.
They are designed to supply more than 1.5A of
load current with an output voltage adjustable
over a 1.2 to 37V range.
The nominal output voltage is selected by means
of only a resistive divider, making the device
exceptionally easy to use and eliminating the
stocking of many fixed regulators.
TO-3
D2PAK
TO-220
ISOWATT220
Parameter
Value
Unit
40
IO
Output Current
T op
Intenrally Limited
P tot
Power Dissipation
T st g
Storage Temperature
-55 to 150
-25 to 150
0 to 125
C
C
o
C
o
Internally Limited
o
- 65 to 150
THERMAL DATA
Symbol
Parameter
November 1999
TO-3
Max
Max
4
35
TO-220
3
50
ISOWATT220
4
60
D2PAK
3
62.5
Unit
o
o
C/W
C/W
1/11
LM117/217/317
CONNECTION DIAGRAM AND ORDERING NUMBERS (top view)
TO-220
ISOWATT220
D2PAK
Type
TO-3
LM117
LM117K
LM217
LM217K
LM217T
LM317
LM317K
LM317T
SCHEMATIC DIAGRAM
2/11
TO-3
TO-220
ISOWATT220
D PAK
LM217D2T
LM317P
LM317D2T
LM117/217/317
BASIC ADJUSTABLE REGULATOR
ELECTRICAL CHARACTERISTICS (Vi - Vo = 5 V, Io = 500 mA, IMAX = 1.5A and PMAX = 20W, unless
otherwise specified)
Symbol
Parameter
Test Conditions
LM117/LM217
Min.
V o
V o
Line Regulation
Load Regulation
Vi - Vo = 3 to 40 V
Vo 5V
Io = 10 mA to IMAX
T j = 25 o C
o
Max.
LM317
Min.
Unit
Typ.
Max.
0.01
0.02
0.01
0.04
%/V
0.02
0.05
0.02
0.07
%/V
15
25
mV
20
50
20
70
mV
0.1
0.3
0.1
0.5
0.3
0.3
1.5
50
100
50
100
I ADJ
0.2
0.2
V REF
Reference Voltage
Vi - Vo = 2.5 to 40 V
(between pin 3 and pin Io = 10 mA to IMAX
1)
PD PMAX
Output Voltage
Temperature Stability
1.25
1.3
1.25
1.3
Vo 5V
Io = 10 mA to IMAX
I ADJ
Vo
Vo
I o (m in)
I o (max )
Maximum Load
Current
T j = 25 C
Typ.
T j = 25 C
1.2
1
3.5
Vi - Vo 15 V
PD < PMAX
1.5
Vi - Vo = 40 V
PD < PMAX
o
Tj = 25 C
eN
SVR
B = 10Hz to 10KHz
Tj = 25 oC
Supply Voltage
Rejection (*)
Tj = 25 oC
f = 120 Hz
1.2
C ADJ =0
C ADJ =10F
66
2.2
1
5
3.5
10
mA
2.2
0.4
0.4
0.003
0.003
65
65
dB
80
dB
80
1.5
66
3/11
LM117/217/317
Figure 1 : Output Current vs. Input-output
Differential Voltage.
APPLICATION INFORMATION
The LM117/217/317 provides an internal
reference voltage of 1.25V between the output
and adjustments terminals. This is used to set a
constant current flow across an external resistor
divider (see fig. 4), giving an output voltage VO of:
R2
VO = VREF ( 1 + ) + IADJ R2
R1
The device was designed to minimize the term
IADJ (100A max) and to maintain it very constant
with line and load changes. Usually, the error
term IADJ R2 can be neglected. To obtain the
previous requirement, all the regulator quiescent
current is returned to the output terminal,
imposing a minimum load current condition. If the
load is insufficient, the output voltage will rise.
Since the LM117/217317 is a floating regulator
and sees only the input-to-output differential
4/11
LM117/217/317
to improve the ripple rejection of about 15 dB
(CADJ).
An 1F tantalium (or 25FAluminium electrolitic)
capacitor on the output to improve transient
response.
In additional to external capacitors, it is good
D1 protect the device against input short circuit, while D2 protects against output short circuit for capacitors discharging
Io =
Vr ef
R1
+ IADJ
1.25V
R1
5/11
LM117/217/317
Figure 8 : 5V Electronic Shut-down Regulator
6/11
LM117/217/317
DIM.
MIN.
A
inch
TYP.
MAX.
MIN.
TYP.
11.7
MAX.
0.460
0.96
1.10
0.037
0.043
1.70
0.066
8.7
0.342
20.0
0.787
10.9
0.429
16.9
0.665
26.2
3.88
1.031
4.09
0.152
39.50
1.555
30.10
1.185
0.161
P003N
7/11
LM117/217/317
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
D1
0.107
1.27
0.050
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
L5
H2
G1
F1
L2
F2
Dia.
L5
L9
L7
L6
8/11
L4
P011C
LM117/217/317
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.4
0.7
0.015
0.027
0.75
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9.3
0.354
0.366
3.2
0.118
0.126
L3
L3
L6
F1
L7
F2
G1
1 2 3
L2
L4
P011G
9/11
LM117/217/317
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
8.95
9.35
0.352
0.368
10
10.4
0.393
0.409
4.88
5.28
0.192
0.208
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
C2
A2
A
C
DETAILA
DETAILA
A1
B2
L2
L3
P011P6/F
10/11
LM117/217/317
Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
11/11
LM137/LM337
3-Terminal Adjustable Negative Regulators
General Description
The LM137/LM337 are adjustable 3-terminal negative voltage regulators capable of supplying in excess of 1.5A over
an output voltage range of 1.2V to 37V. These regulators
are exceptionally easy to apply, requiring only 2 external
resistors to set the output voltage and 1 output capacitor for
frequency compensation. The circuit design has been optimized for excellent regulation and low thermal transients.
Further, the LM137 series features internal current limiting,
thermal shutdown and safe-area compensation, making
them virtually blowout-proof against overloads.
The LM137/LM337 serve a wide variety of applications including local on-card regulation, programmable-output voltage regulation or precision current regulation. The LM137/
LM337 are ideal complements to the LM117/LM317
adjustable positive regulators.
n
n
n
n
n
n
n
n
n
Device
LM137/337
Typical Applications
Design
Load
Dissipation
Current
TO-3 (K)
20W
1.5A
TO-39 (H)
2W
0.5A
LM337
TO-220 (T)
15W
1.5A
LM337
SOT-223
(MP)
2W
1A
Features
n
n
n
n
Rated
Power
Package
00906731
Scale 1:1
00906701
*C2 = 1 F solid tantalum is required only if regulator is more than 4" from
power-supply filter capacitor
Output capacitors in the range of 1 F to 1000 F of aluminum or tantalum
electrolytic are commonly used to provide improved output impedance and
rejection of transients
DS009067
www.national.com
November 2001
LM137/LM337
(Notes 1,
4)
Internally Limited
40V
55C to +150C
0C to +125C
LM337I
40C to +125C
Storage Temperature
LM337
65C to +150C
300C
260C
ESD Rating
2k Volts
Conditions
LM137
Min
Line Regulation
Load Regulation
Thermal Regulation
Tj = 25C, 10 ms Pulse
LM337
Typ
Max
0.01
0.02
Min
Units
Typ
Max
0.01
0.04
%/V
(Note 2) IL = 10 mA
10 mA IL IMAX
0.3
0.5
0.3
1.0
0.002
0.02
0.003
0.04
%/W
65
100
65
100
Tj = 25C (Note 3)
0.02
0.05
0.02
0.07
Load Regulation
0.3
0.3
1.5
Temperature Stability
TMIN Tj TMAX
0.6
2.5
2.5
10
mA
1.2
1.5
mA
0.6
%/V
%
%
1.5
2.2
3.5
1.5
2.2
3.7
H Package
0.5
0.8
1.8
0.5
0.8
1.9
K, MP and T Package
0.24
0.4
0.15
0.4
H Package
0.15
0.17
0.10
Tj = 25C, 10 Hz f 10 kHz
0.003
60
CADJ = 10 F
66
77
66
0.17
0.003
60
dB
77
dB
Long-Term Stability
0.3
0.3
H Package
12
15
12
15
C/W
K Package
2.3
2.3
C/W
T Package
Thermal Resistance, Junction to
Ambient (No Heat Sink)
C/W
H Package
140
140
C/W
K Package
35
35
C/W
50
170
C/W
C/W
T Package
MP Package
Note 1: Unless otherwise specified, these specifications apply 55C Tj +150C for the LM137, 0C Tj +125C for the LM337; VIN VOUT = 5V; and IOUT
= 0.1A for the TO-39 package and IOUT = 0.5A for the TO-3, SOT-223 and TO-220 packages. Although power dissipation is internally limited, these specifications
are applicable for power dissipations of 2W for the TO-39 and SOT-223 (see Application Hints), and 20W for the TO-3, and TO-220. IMAX is 1.5A for the TO-3,
SOT-223 and TO-220 packages, and 0.2A for the TO-39 package.
Note 2: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to heating effects are
covered under the specification for thermal regulation. Load regulation is measured on the output pin at a point 18" below the base of the TO-3 and TO-39 packages.
www.national.com
LM137/LM337
(Continued)
Schematic Diagram
00906702
Thermal Regulation
When power is dissipated in an IC, a temperature gradient
occurs across the IC chip affecting the individual IC circuit
components. With an IC regulator, this gradient can be especially severe since power dissipation is large. Thermal
regulation is the effect of these temperature gradients on
output voltage (in percentage output change) per Watt of
power change in a specified time. Thermal regulation error is
independent of electrical regulation or temperature coefficient, and occurs within 5 ms to 50 ms after a change in
power dissipation. Thermal regulation depends on IC layout
as well as electrical design. The thermal regulation of a
voltage regulator is defined as the percentage change of
VOUT, per Watt, within the first 10 ms after a step of power is
applied. The LM137s specification is 0.02%/W, max.
00906703
FIGURE 1.
www.national.com
LM137/LM337
Thermal Regulation
(Continued)
FIGURE 2.
Connection Diagrams
TO-3
Metal Can Package
TO-220
Plastic Package
00906705
Bottom View
Order Number LM137K/883
LM137KPQML and LM137KPQMLV(Note 5)
See NS Package Number K02C
Order Number LM337K STEEL
See NS Package Number K02A
Case is Input
TO-39
Metal Can Package
00906707
Front View
Order Number LM337T
See NS Package Number T03B
3-Lead SOT-223
00906706
Bottom View
Order Number LM137H, LM137H/883 or LM337H
LM137HPQML and LM137HPQMLV(Note 5)
See NS Package Number H03A
00906734
Front View
Order Number LM337IMP
Package Marked N02ASee NS Package Number MA04A
Case Is Input
Note 5: See STD Mil DWG 5962P99517 for Radiation Tolerant Devices
www.national.com
LM137/LM337
Application Hints
Typical Applications
00906709
Current Regulator
00906732
00906711
00906733
00906713
supply is shorted
**When C2 is larger than 10 F and VOUT is larger than 25V, D2
protects the LM137 in case the output is shorted
www.national.com
LM137/LM337
Typical Applications
(Continued)
00906714
00906710
00906712
www.national.com
LM137/LM337
Load Regulation
Current Limit
00906716
00906717
Adjustment Current
Dropout Voltage
00906718
00906719
Temperature Stability
00906720
00906721
www.national.com
LM137/LM337
Ripple Rejection
Ripple Rejection
00906722
00906723
Ripple Rejection
Output Impedance
00906724
00906725
00906726
www.national.com
00906727
LM137/LM337
Physical Dimensions
inches (millimeters)
www.national.com
LM137/LM337
Physical Dimensions
www.national.com
10
LM137/LM337
Physical Dimensions
11
www.national.com
Physical Dimensions
www.national.com
National Semiconductor
Europe
Fax: +49 (0) 180-530 85 86
Email: europe.support@nsc.com
Deutsch Tel: +49 (0) 69 9508 6208
English Tel: +44 (0) 870 24 0 2171
Franais Tel: +33 (0) 1 41 91 8790
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: ap.support@nsc.com
National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
www.fairchildsemi.com
MC78XX/LM78XX/MC78XXA
Description
Output Current up to 1A
Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24V
Thermal Overload Protection
Short Circuit Protection
Output Transistor Safe Operating Area Protection
TO-220
1
D-PAK
1
1. Input 2. GND 3. Output
Rev. 1.0.0
2001 Fairchild Semiconductor Corporation
MC78XX/LM78XX/MC78XXA
Symbol
Value
Unit
VI
VI
35
40
V
V
RJC
C/W
oC/W
RJA
65
TOPR
0 ~ +125
-65 ~ +150
TSTG
C
C
Output Voltage
Symbol
VO
Conditions
MC7805/LM7805
Min.
Typ.
Max.
TJ =+25 oC
4.8
5.0
5.2
4.75
5.0
5.25
VO = 7V to 25V
4.0
100
VI = 8V to 12V
1.6
50
IO = 5.0mA to1.5A
100
IO =250mA to
750mA
50
Unit
Regline
TJ=+25 oC
Regload
TJ=+25 oC
IQ
TJ =+25 oC
5.0
8.0
IO = 5mA to 1.0A
0.03
0.5
VI= 7V to 25V
0.3
1.3
IO= 5mA
-0.8
mV/ oC
42
V/Vo
62
73
dB
IO = 1A, TJ =+25 oC
f = 1KHz
15
230
mA
2.2
Quiescent Current
Quiescent Current Change
Output Voltage Drift
IQ
VO/T
VN
Ripple Rejection
RR
f = 120Hz
VO = 8V to 18V
Dropout Voltage
VDrop
Output Resistance
Short Circuit Current
Peak Current
rO
ISC
VI = 35V, TA =+25
IPK
TJ =+25 C
oC
mV
mV
mA
mA
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
MC78XX/LM78XX/MC78XXA
Output Voltage
Symbol
VO
Conditions
MC7806
Min.
Typ.
Max.
TJ =+25 oC
5.75
6.0
6.25
5.7
6.0
6.3
VI = 8V to 25V
120
VI = 9V to 13V
1.5
60
IO =5mA to 1.5A
120
IO =250mA to750A
60
Unit
Regline
TJ =+25 oC
Regload
TJ =+25 oC
IQ
TJ =+25 oC
5.0
8.0
IO = 5mA to 1A
0.5
VI = 8V to 25V
1.3
IO = 5mA
-0.8
mV/ oC
VN
45
V/Vo
Ripple Rejection
RR
f = 120Hz
VI = 9V to 19V
59
75
dB
Dropout Voltage
VDrop
IO = 1A, TJ =+25 oC
f = 1KHz
19
250
mA
2.2
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage
Output Resistance
IQ
VO/T
rO
ISC
VI= 35V, TA
Peak Current
IPK
TJ =+25 oC
=+25 oC
mV
mV
mA
mA
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
MC78XX/LM78XX/MC78XXA
Output Voltage
Symbol
VO
Conditions
MC7808
Min.
Typ. Max.
TJ =+25 oC
7.7
8.0
8.3
7.6
8.0
8.4
VI = 10.5V to 25V
5.0
160
VI = 11.5V to 17V
2.0
80
IO = 5.0mA to 1.5A
10
160
5.0
80
Unit
Regline
TJ =+25 oC
Regload
TJ =+25 oC
IQ
TJ =+25 oC
5.0
8.0
IO = 5mA to 1.0A
0.05
0.5
VI = 10.5A to 25V
0.5
1.0
IO = 5mA
-0.8
mV/ oC
Quiescent Current
Quiescent Current Change
Output Voltage Drift
IQ
VO/T
mV
mV
mA
mA
VN
52
V/Vo
Ripple Rejection
RR
56
73
dB
IO = 1A, TJ=+25 C
f = 1KHz
17
230
mA
2.2
Dropout Voltage
Output Resistance
Short Circuit Current
Peak Current
VDrop
rO
ISC
IPK
VI= 35V, TA
o
TJ =+25 C
=+25 oC
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
MC78XX/LM78XX/MC78XXA
Output Voltage
Symbol
VO
Conditions
MC7809
Min.
Typ.
Max.
TJ =+25C
8.65
9.35
8.6
9.4
VI = 11.5V to 25V
180
VI = 12V to 17V
90
IO = 5mA to 1.5A
12
180
IO = 250mA to 750mA
90
Unit
V
mV
Regline
TJ=+25C
Regload
TJ=+25C
IQ
TJ=+25C
5.0
8.0
IO = 5mA to 1.0A
0.5
VI = 11.5V to 26V
1.3
IO = 5mA
-1
mV/ C
VN
58
V/Vo
RR
f = 120Hz
VI = 13V to 23V
56
71
dB
IO = 1A, TJ=+25C
17
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage
Ripple Rejection
Dropout Voltage
IQ
VO/T
VDrop
mV
mA
mA
Output Resistance
rO
f = 1KHz
ISC
250
mA
Peak Current
IPK
TJ= +25C
2.2
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
MC78XX/LM78XX/MC78XXA
Output Voltage
Symbol
VO
Conditions
MC7810
Min.
Typ.
Max.
TJ =+25 C
9.6
10
10.4
9.5
10
10.5
VI = 12.5V to 25V
10
200
VI = 13V to 25V
100
IO = 5mA to 1.5A
12
200
IO = 250mA to 750mA
400
Unit
V
mV
Regline
TJ =+25C
Regload
TJ =+25C
IQ
TJ =+25C
5.1
8.0
IO = 5mA to 1.0A
0.5
VI = 12.5V to 29V
1.0
IO = 5mA
-1
mV/C
VN
58
V/Vo
Ripple Rejection
RR
f = 120Hz
VI = 13V to 23V
56
71
dB
Dropout Voltage
VDrop
IO = 1A, TJ=+25 C
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage
IQ
VO/T
mV
mA
mA
Output Resistance
rO
f = 1KHz
17
ISC
VI = 35V, TA=+25 C
250
mA
Peak Current
IPK
TJ =+25 C
2.2
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
MC7812
Min.
Typ. Max.
Unit
TJ =+25 oC
11.5
12
12.5
11.4
12
12.6
VI = 14.5V to 30V
10
240
VI = 16V to 22V
3.0
120
IO = 5mA to 1.5A
11
240
IO = 250mA to 750mA
5.0
120
TJ =+25 oC
5.1
8.0
IO = 5mA to 1.0A
0.1
0.5
VI = 14.5V to 30V
0.5
1.0
IO = 5mA
-1
mV/ oC
VN
76
V/Vo
Ripple Rejection
RR
f = 120Hz
VI = 15V to 25V
55
71
dB
Dropout Voltage
VDrop
IO = 1A, TJ=+25 oC
f = 1KHz
18
230
mA
2.2
Output Voltage
VO
TJ =+25 oC
Regline
Regload TJ =+25 oC
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage
Output Resistance
IQ
IQ
VO/T
rO
ISC
VI = 35V, TA
Peak Current
IPK
TJ = +25 oC
=+25 oC
V
mV
mV
mA
mA
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
MC78XX/LM78XX/MC78XXA
Output Voltage
Symbol
VO
MC7815
Conditions
Min.
Typ.
Max.
TJ =+25 oC
14.4
15
15.6
14.25
15
15.75
VI = 17.5V to 30V
11
300
VI = 20V to 26V
150
IO = 5mA to 1.5A
12
300
IO = 250mA to
750mA
150
Unit
Regline
TJ =+25 oC
Regload
TJ =+25 oC
IQ
TJ =+25 oC
5.2
8.0
IO = 5mA to 1.0A
0.5
VI = 17.5V to 30V
1.0
-1
mV/ oC
90
V/Vo
Quiescent Current
Quiescent Current Change
Output Voltage Drift
IQ
VO/T
IO = 5mA
o
mV
mV
mA
mA
VN
Ripple Rejection
RR
f = 120Hz
VI = 18.5V to 28.5V
54
70
dB
Dropout Voltage
VDrop
IO = 1A, TJ=+25 oC
Output Resistance
rO
f = 1KHz
19
ISC
VI = 35V, TA=+25 oC
250
mA
2.2
Peak Current
IPK
TJ =+25 C
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
MC7818
Min.
Typ. Max.
Unit
TJ =+25 oC
17.3
18
18.7
17.1
18
18.9
VI = 21V to 33V
15
360
VI = 24V to 30V
180
IO = 5mA to 1.5A
15
360
IO = 250mA to 750mA
5.0
180
TJ =+25 oC
5.2
8.0
IO = 5mA to 1.0A
0.5
VI = 21V to 33V
IO = 5mA
-1
mV/ oC
VN
110
V/Vo
Ripple Rejection
RR
f = 120Hz
VI = 22V to 32V
53
69
dB
Dropout Voltage
VDrop
IO = 1A, TJ=+25 oC
f = 1KHz
22
250
mA
2.2
Output Voltage
VO
TJ =+25 oC
Regline
Regload TJ =+25 oC
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage
Output Resistance
IQ
IQ
VO/T
rO
ISC
VI = 35V, TA
Peak Current
IPK
TJ =+25 oC
=+25 oC
V
mV
mV
mA
mA
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
TJ =+25 oC
Output Voltage
VO
MC7824
Min.
Typ. Max.
23
24
25
22.8
24
25.25
VI = 27V to 38V
17
480
VI = 30V to 36V
240
IO = 5mA to 1.5A
15
480
IO = 250mA to 750mA
5.0
240
Unit
Regline
TJ =+25 oC
Regload
TJ =+25 oC
IQ
TJ =+25 oC
5.2
8.0
IO = 5mA to 1.0A
0.1
0.5
VI = 27V to 38V
0.5
IO = 5mA
-1.5
mV/ oC
VN
60
V/Vo
Ripple Rejection
RR
f = 120Hz
VI = 28V to 38V
50
67
dB
Dropout Voltage
VDrop
IO = 1A, TJ=+25 oC
f = 1KHz
28
230
mA
2.2
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage
Output Resistance
IQ
VO/T
rO
ISC
VI = 35V, TA=+25
Peak Current
IPK
TJ =+25 oC
oC
mV
mV
mA
mA
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
10
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
Min.
Typ.
Max.
4.9
5.1
4.8
5.2
VI = 7.5V to 25V
IO = 500mA
50
VI = 8V to 12V
50
50
VI= 8V to 12V
TJ =+25
Output Voltage
VO
Regline
oC
TJ =+25 oC
Quiescent Current
Quiescent Current
Change
Regload
IQ
1.5
25
TJ =+25 oC
IO = 5mA to 1.5A
100
IO = 5mA to 1A
100
IO = 250mA to 750mA
50
TJ =+25
oC
V/T
mV
mV
5.0
0.5
0.8
0.8
Io = 5mA
-0.8
mV/ oC
VI = 8 V to 25V, IO = 500mA
VI = 7.5V to 20V, TJ =+25
IO = 5mA to 1A
IQ
Unit
oC
mA
mA
VN
f = 10Hz to 100KHz
TA =+25 oC
10
V/Vo
Ripple Rejection
RR
f = 120Hz, IO = 500mA
VI = 8V to 18V
68
dB
Dropout Voltage
VDrop
IO = 1A, TJ =+25 oC
f = 1KHz
17
250
mA
2.2
Output Resistance
rO
ISC
VI= 35V, TA
Peak Current
IPK
TJ= +25 oC
=+25 oC
Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
11
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
Min.
Typ.
Max.
5.58
6.12
5.76
6.24
60
VI= 9V to 13V
60
60
VI= 9V to 13V
TJ =+25
Output Voltage
VO
Regline
oC
TJ =+25 oC
Quiescent Current
Regload
IQ
1.5
30
TJ =+25 oC
IO = 5mA to 1.5A
100
IO = 5mA to 1A
100
IO = 250mA to 750mA
5.0
50
TJ =+25
oC
IQ
V/T
mV
mV
4.3
0.5
VI = 9V to 25V, IO = 500mA
0.8
=+25 oC
0.8
IO = 5mA
-0.8
mV/ oC
IO = 5mA to 1A
Quiescent Current Change
Unit
mA
mA
VN
f = 10Hz to 100KHz
TA =+25 oC
10
V/Vo
Ripple Rejection
RR
f = 120Hz, IO = 500mA
VI = 9V to 19V
65
dB
Dropout Voltage
VDrop
IO = 1A, TJ =+25 oC
f = 1KHz
17
250
mA
2.2
Output Resistance
rO
ISC
VI= 35V, TA
Peak Current
IPK
TJ=+25 oC
=+25 oC
Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
12
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
Min.
Typ.
Max.
TJ =+25 C
7.84
8.16
7.7
8.3
80
Output Voltage
VO
Regline
80
80
40
TJ =+25 C
IO = 5mA to 1.5A
12
100
IO = 5mA to 1A
12
100
IO = 250mA to 750mA
50
TJ =+25 C
5.0
IO = 5mA to 1A
0.5
0.8
TJ =+25 oC
Unit
V
mV
Quiescent Current
Quiescent Current Change
Regload
IQ
IQ
V/T
mV
mA
mA
0.8
IO = 5mA
-0.8
mV/ oC
VN
f = 10Hz to 100KHz
TA =+25 oC
10
V/Vo
Ripple Rejection
RR
f = 120Hz, IO = 500mA
VI = 11.5V to 21.5V
62
dB
Dropout Voltage
VDrop
IO = 1A, TJ =+25 oC
Output Resistance
rO
f = 1KHz
18
ISC
250
mA
2.2
Peak Current
IPK
TJ=+25 C
Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
13
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
Min.
Typ.
Max.
8.82
9.0
9.18
8.65
9.0
9.35
90
45
90
TJ
Output Voltage
VO
Regline
=+25C
TJ =+25C
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Regload
IQ
IQ
V/T
45
TJ =+25C
IO = 5mA to 1.0A
12
100
IO = 5mA to 1.0A
12
100
IO = 250mA to 750mA
50
TJ
=+25 C
Unit
V
mV
mV
5.0
6.0
0.8
mA
0.8
IO = 5mA to 1.0A
0.5
IO = 5mA
-1.0
mV/ C
mA
VN
f = 10Hz to 100KHz
TA =+25 C
10
V/Vo
Ripple Rejection
RR
f = 120Hz, IO = 500mA
VI = 12V to 22V
62
dB
Dropout Voltage
VDrop
IO = 1A, TJ =+25 C
2.0
f = 1KHz
17
250
mA
2.2
Output Resistance
rO
ISC
VI= 35V, TA
Peak Current
IPK
TJ=+25C
=+25 C
Note:
1. Load and line regulation are specified at constant, junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
14
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
Min.
Typ.
Max.
9.8
10
10.2
9.6
10
10.4
100
50
100
TJ
Output Voltage
VO
Regline
=+25C
TJ =+25 C
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Regload
IQ
IQ
V/T
50
TJ =+25 C
IO = 5mA to 1.5A
12
100
IO = 5mA to 1.0A
12
100
IO = 250mA to 750mA
50
TJ
=+25 C
5.0
6.0
0.5
0.8
IO = 5mA to 1.0A
0.5
IO = 5mA
-1.0
Unit
V
mV
mV
mA
mA
mV/ C
V/Vo
VN
f = 10Hz to 100KHz
TA =+25 C
10
Ripple Rejection
RR
f = 120Hz, IO = 500mA
VI = 14V to 24V
62
dB
Dropout Voltage
VDrop
IO = 1A, TJ =+25C
2.0
f = 1KHz
17
250
mA
2.2
Output Resistance
rO
ISC
VI= 35V, TA
Peak Current
IPK
TJ=+25 C
=+25 C
Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
15
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
Min.
Typ.
Max.
11.75
12
12.25
11.5
12
12.5
10
120
120
10
120
TJ
Output Voltage
VO
Regline
=+25 C
TJ =+25 C
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Regload
IQ
IQ
V/T
60
TJ =+25 C
IO = 5mA to 1.5A
12
100
IO = 5mA to 1.0A
12
100
IO = 250mA to 750mA
50
5.1
6.0
TJ
=+25C
Unit
V
mV
mV
mA
0.8
0.8
IO = 5mA to 1.0A
0.5
IO = 5mA
-1.0
mV/C
mA
VN
f = 10Hz to 100KHz
TA =+25C
10
V/Vo
Ripple Rejection
RR
f = 120Hz, IO = 500mA
VI = 14V to 24V
60
dB
Dropout Voltage
VDrop
IO = 1A, TJ =+25C
2.0
f = 1KHz
18
250
mA
2.2
Output Resistance
rO
ISC
VI= 35V, TA
Peak Current
IPK
TJ=+25 C
=+25 C
Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
16
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
Min.
Typ.
Max.
14.7
15
15.3
14.4
15
15.6
10
150
150
11
150
TJ
Output Voltage
VO
Regline
=+25 C
TJ =+25C
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Regload
IQ
IQ
V/T
75
TJ =+25 C
IO = 5mA to 1.5A
12
100
IO = 5mA to 1.0A
12
100
IO = 250mA to 750mA
50
TJ
=+25 C
Unit
V
mV
mV
5.2
6.0
0.8
mA
0.8
IO = 5mA to 1.0A
0.5
IO = 5mA
-1.0
mV/C
mA
VN
f = 10Hz to 100KHz
TA =+25 C
10
V/Vo
Ripple Rejection
RR
f = 120Hz, IO = 500mA
VI = 18.5V to 28.5V
58
dB
Dropout Voltage
VDrop
IO = 1A, TJ =+25 C
2.0
f = 1KHz
19
250
mA
2.2
Output Resistance
rO
ISC
VI= 35V, TA
Peak Current
IPK
TJ=+25C
=+25 C
Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
17
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
Min.
Typ.
Max.
17.64
18
18.36
17.3
18
18.7
15
180
180
15
180
TJ
Output Voltage
VO
Regline
=+25 C
TJ =+25 C
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Regload
IQ
IQ
V/T
90
TJ =+25C
IO = 5mA to 1.5A
15
100
IO = 5mA to 1.0A
15
100
IO = 250mA to 750mA
50
TJ
=+25 C
5.2
6.0
0.8
0.8
IO = 5mA to 1.0A
0.5
IO = 5mA
-1.0
Unit
V
mV
mV
mA
mA
mV/ C
V/Vo
VN
f = 10Hz to 100KHz
TA =+25C
10
Ripple Rejection
RR
f = 120Hz, IO = 500mA
VI = 22V to 32V
57
dB
Dropout Voltage
VDrop
IO = 1A, TJ =+25C
2.0
f = 1KHz
19
250
mA
2.2
Output Resistance
rO
ISC
VI= 35V, TA
Peak Current
IPK
TJ=+25 C
=+25C
Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
18
MC78XX/LM78XX/MC78XXA
Symbol
Conditions
Min.
Typ.
Max.
23.5
24
24.5
23
24
25
18
240
240
18
240
TJ
Output Voltage
VO
Regline
=+25 C
TJ =+25 C
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Regload
IQ
IQ
V/T
120
TJ =+25 C
IO = 5mA to 1.5A
15
100
IO = 5mA to 1.0A
15
100
IO = 250mA to 750mA
50
TJ
=+25 C
Unit
V
mV
mV
5.2
6.0
0.8
mA
0.8
IO = 5mA to 1.0A
0.5
IO = 5mA
-1.5
mV/ C
mA
VN
f = 10Hz to 100KHz
TA = 25 C
10
V/Vo
Ripple Rejection
RR
f = 120Hz, IO = 500mA
VI = 28V to 38V
54
dB
Dropout Voltage
VDrop
IO = 1A, TJ =+25 C
2.0
f = 1KHz
20
250
mA
2.2
Output Resistance
rO
ISC
VI= 35V, TA
Peak Current
IPK
TJ=+25 C
=+25 C
Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
19
MC78XX/LM78XX/MC78XXA
20
MC78XX/LM78XX/MC78XXA
Typical Applications
MC78XX/LM78XX
Input
Output
Figure 5. DC Parameters
MC78XX/LM78XX
Input
Output
MC78XX/LM78XX
Input
Output
Input
MC78XX/LM78XX
Output
21
MC78XX/LM78XX/MC78XXA
MC78XX/LM78XX
Input
Output
CI
Co
Output
Input
MC78XX/LM78XX
CI
Co
I RI 5IQ
VO = VXX(1+R2/R1)+IQR2
Figure 10. Circuit for Increasing Output Voltage
Input
CI
Output
MC7805
LM7805
LM741
Co
IRI 5 IQ
VO = VXX(1+R2/R1)+IQR2
Figure 11. Adjustable Output Regulator (7 to 30V)
22
MC78XX/LM78XX/MC78XXA
Input
Output
MC78XX/LM78XX
Input
MC78XX/LM78XX
Output
MC78XX/LM78XX
LM741
23
MC78XX/LM78XX/MC78XXA
MC7815
MC7915
Output
Input
MC78XX/LM78XX
Output
Input
MC78XX/LM78XX
24
MC78XX/LM78XX/MC78XXA
Mechanical Dimensions
Package
TO-220
4.50 0.20
2.80 0.10
(3.00)
+0.10
1.30 0.05
18.95MAX.
(3.70)
3.60 0.10
15.90 0.20
1.30 0.10
(8.70)
(1.46)
9.20 0.20
(1.70)
9.90 0.20
(45
1.52 0.10
0.80 0.10
2.54TYP
[2.54 0.20]
10.08 0.30
(1.00)
13.08 0.20
1.27 0.10
+0.10
0.50 0.05
2.40 0.20
2.54TYP
[2.54 0.20]
10.00 0.20
25
MC78XX/LM78XX/MC78XXA
D-PAK
MIN0.55
0.91 0.10
9.50 0.30
0.50 0.10
0.76 0.10
0.50 0.10
1.02 0.20
2.30TYP
[2.300.20]
(3.05)
(2XR0.25)
(0.10)
2.70 0.20
6.10 0.20
9.50 0.30
0.76 0.10
26
(1.00)
6.60 0.20
(5.34)
(5.04)
(1.50)
(0.90)
2.30 0.20
(0.70)
2.30TYP
[2.300.20]
(0.50)
2.30 0.10
0.89 0.10
MAX0.96
(4.34)
2.70 0.20
0.80 0.20
0.60 0.20
(0.50)
6.10 0.20
5.34 0.30
0.70 0.20
6.60 0.20
MC78XX/LM78XX/MC78XXA
Ordering Information
Product Number
Package
Operating Temperature
LM7805CT
4%
TO-220
0 ~ + 125C
Product Number
Package
Operating Temperature
MC7805CT
MC7806CT
MC7808CT
MC7809CT
MC7810CT
TO-220
MC7812CT
MC7815CT
MC7818CT
MC7824CT
MC7805CDT
4%
MC7806CDT
MC7808CDT
MC7809CDT
D-PAK
MC7810CDT
0 ~ + 125C
MC7812CDT
MC7815CDT
MC7818CDT
MC7824CDT
MC7805ACT
MC7806ACT
MC7808ACT
MC7809ACT
MC7810ACT
2%
TO-220
MC7812ACT
MC7815ACT
MC7818ACT
MC7824ACT
27
MC78XX/LM78XX/MC78XXA
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
www.fairchildsemi.com
6/1/01 0.0m 001
Stock#DSxxxxxxxx
2001 Fairchild Semiconductor Corporation
LM35/LM35A/LM35C/LM35CA/LM35D
Precision Centigrade Temperature Sensors
General Description
The LM35 series are precision integrated-circuit temperature sensors, whose output voltage is linearly proportional to
the Celsius (Centigrade) temperature. The LM35 thus has
an advantage over linear temperature sensors calibrated in
Kelvin, as the user is not required to subtract a large constant voltage from its output to obtain convenient Centigrade scaling. The LM35 does not require any external calibration or trimming to provide typical accuracies of g (/4 C
at room temperature and g */4 C over a full b55 to a 150 C
temperature range. Low cost is assured by trimming and
calibration at the wafer level. The LM35s low output impedance, linear output, and precise inherent calibration make
interfacing to readout or control circuitry especially easy. It
can be used with single power supplies, or with plus and
minus supplies. As it draws only 60 mA from its supply, it has
very low self-heating, less than 0.1 C in still air. The LM35 is
rated to operate over a b55 to a 150 C temperature
range, while the LM35C is rated for a b40 to a 110 C
range (b10 with improved accuracy). The LM35 series is
Features
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Connection Diagrams
TO-92
Plastic Package
TO-46
Metal Can Package*
SO-8
Small Outline Molded Package
TL/H/5516 2
TL/H/55161
TL/H/5516 21
Top View
N.C. e No Connection
Typical Applications
TL/H/5516 3
TL/H/5516 4
Choose R1 e b VS/50 mA
VOUT e a 1,500 mV at a 150 C
e a 250 mV at a 25 C
TL/H/551624
eb 550 mV at b 55 C
TL/H/5516
RRD-B30M75/Printed in U. S. A.
LM35/LM35A/LM35C/LM35CA/LM35D
Precision Centigrade Temperature Sensors
December 1994
215 C
a 35V to b 0.2V
a 6V to b 1.0V
Output Voltage
Output Current
10 mA
b 60 C to a 180 C
Storage Temp., TO-46 Package,
b 60 C to a 150 C
TO-92 Package,
b 65 C to a 150 C
SO-8 Package,
b 65 C to a 150 C
TO-202 Package,
Lead Temp.:
TO-46 Package, (Soldering, 10 seconds)
300 C
TO-92 Package, (Soldering, 10 seconds)
260 C
a 230 C
TO-202 Package, (Soldering, 10 seconds)
Accuracy
(Note 7)
Conditions
TA e a 25 C
TA eb10 C
TA e TMAX
TA e TMIN
Typical
Tested
Limit
(Note 4)
g 0.2
g 0.5
g 0.2
g 0.5
Design
Limit
(Note 5)
Units
(Max.)
g 0.4
g 1.0
g 0.4
g 0.4
g 1.0
g 0.4
g 1.5
g 0.15
g 0.3
a 10.0
a 9.9,
a 10.1
mV/ C
g 0.18
Sensor Gain
(Average Slope)
TMINsTAsTMAX
a 10.0
a 9.9,
a 10.1
Load Regulation
(Note 3) 0sILs1 mA
TA e a 25 C
TMINsTAsTMAX
g 0.4
g 1.0
g 0.5
Line Regulation
(Note 3)
TA e a 25 C
4VsVSs30V
g 0.02
Quiescent Current
(Note 9)
VS e a 5V, a 25 C
VS e a 5V
VS e a 30V, a 25 C
VS e a 30V
56
105
56.2
105.5
Temperature
Coefficient of
Quiescent Current
Tested
Limit
(Note 4)
g 0.3
TMINsTAsTMAX
4VsVSs30V, a 25 C
4VsVSs30V
Typical
C
C
C
C
g 0.3
Nonlinearity
(Note 8)
Change of
Quiescent Current
(Note 3)
LM35CA
Design
Limit
(Note 5)
g 0.01
g 0.35
g 0.4
g 3.0
g 0.5
g 0.1
g 0.02
g 0.05
g 0.01
133
56
91
56.2
91.5
2.0
0.2
0.5
a 0.39
a 0.5
a 2.0
0.2
0.5
Minimum Temperature
for Rated Accuracy
In circuit of
Figure 1 , IL e 0
a 1.5
TJ e TMAX, for
1000 hours
g 0.08
67
131
68
1.0
g 1.0
g 1.0
g 1.0
g 3.0
mV/mA
mV/mA
g 0.1
mV/V
mV/V
g 0.05
67
116
mA
mA
mA
mA
2.0
mA
mA
a 0.39
a 0.5
mA/ C
a 1.5
a 2.0
g 0.08
114
68
1.0
Note 1: Unless otherwise noted, these specifications apply: b 55 C s TJ s a 150 C for the LM35 and LM35A; b 40 s TJ s a 110 C for the LM35C and LM35CA; and
0 s TJ s a 100 C for the LM35D. VS e a 5Vdc and ILOAD e 50 mA, in the circuit of Figure 2. These specifications also apply from a 2 C to TMAX in the circuit of
Figure 1 . Specifications in boldface apply over the full rated temperature range.
Note 2: Thermal resistance of the TO-46 package is 400 C/W, junction to ambient, and 24 C/W junction to case. Thermal resistance of the TO-92 package is
180 C/W junction to ambient. Thermal resistance of the small outline molded package is 220 C/W junction to ambient. Thermal resistance of the TO-202 package
is 85 C/W junction to ambient. For additional thermal resistance information see table in the Applications section.
(Continued)
LM35
Parameter
Accuracy,
LM35, LM35C
(Note 7)
Conditions
TA e a 25 C
TA eb10 C
TA e TMAX
TA e TMIN
Typical
Tested
Limit
(Note 4)
g 0.4
g 1.0
g 0.5
g 0.8
g 1.5
g 0.8
g 1.5
Accuracy,
LM35D
(Note 7)
TA e a 25 C
TA e TMAX
TA e TMIN
Nonlinearity
(Note 8)
TMINsTAsTMAX
g 0.3
Sensor Gain
(Average Slope)
TMINsTAsTMAX
a 10.0
a 9.8,
a 10.2
Load Regulation
(Note 3) 0sILs1 mA
TA e a 25 C
TMINsTAsTMAX
g 0.4
g 2.0
g 0.5
Line Regulation
(Note 3)
TA e a 25 C
4VsVSs30V
g 0.02
Quiescent Current
(Note 9)
VS e a 5V, a 25 C
VS e a 5V
VS e a 30V, a 25 C
VS e a 30V
56
105
56.2
105.5
Change of
Quiescent Current
(Note 3)
4VsVSs30V, a 25 C
4VsVSs30V
Temperature
Coefficient of
Quiescent Current
LM35C, LM35D
Design
Limit
(Note 5)
Typical
Tested
Limit
(Note 4)
g 0.4
g 1.0
g 0.5
g 1.5
g 0.8
g 1.5
g 0.8
g 0.6
g 2.0
g 1.5
g 0.01
g 0.9
g 2.0
g 0.5
a 10.0
a 9.8,
a 10.2
mV/ C
g 0.4
g 0.5
g 0.2
g 0.02
g 0.01
161
56
91
56.2
91.5
3.0
0.2
0.5
a 0.39
a 0.7
a 2.0
0.2
0.5
Minimum Temperature
for Rated Accuracy
In circuit of
Figure 1 , IL e 0
a 1.5
TJ e TMAX, for
1000 hours
g 0.08
80
158
82
2.0
C
C
C
C
g 0.2
g 5.0
g 0.1
Units
(Max.)
C
C
C
g 0.9
g 0.5
Design
Limit
(Note 5)
g 2.0
g 2.0
g 5.0
mV/mA
mV/mA
g 0.2
mV/V
mV/V
g 0.1
80
141
mA
mA
mA
mA
3.0
mA
mA
a 0.39
a 0.7
mA/ C
a 1.5
a 2.0
g 0.08
138
82
2.0
Note 3: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be
computed by multiplying the internal dissipation by the thermal resistance.
Note 4: Tested Limits are guaranteed and 100% tested in production.
Note 5: Design Limits are guaranteed (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to
calculate outgoing quality levels.
Note 6: Specifications in boldface apply over the full rated temperature range.
Note 7: Accuracy is defined as the error between the output voltage and 10mv/ C times the devices case temperature, at specified conditions of voltage, current,
and temperature (expressed in C).
Note 8: Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the devices rated temperature
range.
Note 9: Quiescent current is defined in the circuit of Figure 1 .
Note 10: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when
operating the device beyond its rated operating conditions. See Note 1.
Note 11: Human body model, 100 pF discharged through a 1.5 kX resistor.
Note 12: See AN-450 Surface Mounting Methods and Their Effect on Product Reliability or the section titled Surface Mount found in a current National
Semiconductor Linear Data Book for other methods of soldering surface mount devices.
Thermal Response
in Still Air
Thermal Response in
Stirred Oil Bath
Minimum Supply
Voltage vs. Temperature
Quiescent Current
vs. Temperature
(In Circuit of Figure 1 .)
TL/H/5516 17
Quiescent Current
vs. Temperature
(In Circuit of Figure 2 .)
TL/H/5516 18
Noise Voltage
Start-Up Response
TL/H/5516 22
Applications
The TO-46 metal package can also be soldered to a metal
surface or pipe without damage. Of course, in that case the
Vb terminal of the circuit will be grounded to that metal.
Alternatively, the LM35 can be mounted inside a sealed-end
metal tube, and can then be dipped into a bath or screwed
into a threaded hole in a tank. As with any IC, the LM35 and
accompanying wiring and circuits must be kept insulated
and dry, to avoid leakage and corrosion. This is especially
true if the circuit may operate at cold temperatures where
condensation can occur. Printed-circuit coatings and varnishes such as Humiseal and epoxy paints or dips are often
used to insure that moisture cannot corrode the LM35 or its
connections.
These devices are sometimes soldered to a small lightweight heat fin, to decrease the thermal time constant and
speed up the response in slowly-moving air. On the other
hand, a small thermal mass may be added to the sensor, to
give the steadiest reading despite small deviations in the air
temperature.
Still air
Moving air
Still oil
Stirred oil
(Clamped to metal,
Infinite heat sink)
TO-46,
TO-46,
TO-92,
TO-92,
SO-8
SO-8
TO-202
TO-202 ***
no heat sink small heat fin* no heat sink small heat fin** no heat sink small heat fin** no heat sink small heat fin
100 C/W
180 C/W
140 C/W
220 C/W
110 C/W
85 C/W
60 C/W
400 C/W
40 C/W
90 C/W
70 C/W
105 C/W
90 C/W
25 C/W
40 C/W
100 C/W
40 C/W
90 C/W
70 C/W
100 C/W
30 C/W
45 C/W
40 C/W
50 C/W
(24 C/W)
(55 C/W)
(23 C/W)
* Wakefield type 201, or 1 disc of 0.020 sheet brass, soldered to case, or similar.
** TO-92 and SO-8 packages glued and leads soldered to 1 square of (/16 printed circuit board with 2 oz. foil or similar.
TL/H/5516 19
CAPACITIVE LOADS
Like most micropower circuits, the LM35 has a limited ability
to drive heavy capacitive loads. The LM35 by itself is able to
drive 50 pf without special precautions. If heavier loads are
anticipated, it is easy to isolate or decouple the load with a
resistor; see Figure 3 . Or you can improve the tolerance of
capacitance with a series R-C damper from output to
ground; see Figure 4 .
When the LM35 is applied with a 200X load resistor as
shown in Figure 5, 6, or 8, it is relatively immune to wiring
TL/H/5516 6
TL/H/55167
TL/H/5516 8
TL/H/55169
TL/H/5516 10
TL/H/5516 11
TL/H/5516 12
TL/H/5516 13
FIGURE 13. Temperature To Digital Converter (Serial Output) ( a 128 C Full Scale)
TL/H/5516 14
TL/H/5516 16
* e 1% or 2% film resistor
-Trim RB for VB e 3.075V
-Trim RC for VC e 1.955V
-Trim RA for VA e 0.075V a 100mV/ C c Tambient
-Example, VA e 2.275V at 22 C
TL/H/5516 15
Block Diagram
TL/H/5516 23
10
11
LM35/LM35A/LM35C/LM35CA/LM35D
Precision Centigrade Temperature Sensors
National Semiconductor
GmbH
Livry-Gargan-Str. 10
D-82256 F4urstenfeldbruck
Germany
Tel: (81-41) 35-0
Telex: 527649
Fax: (81-41) 35-1
National Semiconductor
Japan Ltd.
Sumitomo Chemical
Engineering Center
Bldg. 7F
1-7-1, Nakase, Mihama-Ku
Chiba-City,
Ciba Prefecture 261
Tel: (043) 299-2300
Fax: (043) 299-2500
National Semiconductor
Hong Kong Ltd.
13th Floor, Straight Block,
Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
Hong Kong
Tel: (852) 2737-1600
Fax: (852) 2736-9960
National Semiconductores
Do Brazil Ltda.
Rue Deputado Lacorda Franco
120-3A
Sao Paulo-SP
Brazil 05418-000
Tel: (55-11) 212-5066
Telex: 391-1131931 NSBR BR
Fax: (55-11) 212-1181
National Semiconductor
(Australia) Pty, Ltd.
Building 16
Business Park Drive
Monash Business Park
Nottinghill, Melbourne
Victoria 3168 Australia
Tel: (3) 558-9999
Fax: (3) 558-9998
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
TDA2030
14W Hi-Fi AUDIO AMPLIFIER
DESCRIPTION
The TDA2030 is a monolithic integrated circuit in
Pentawatt package, intended for use as a low
frequency class AB amplifier. Typically it provides
14W output power (d = 0.5%) at 14V/4; at 14V
the guaranteed output power is 12W on a 4 load
and 8W on a 8 (DIN45500).
The TDA2030 provides high output current and has
very low harmonic and cross-over distortion.
Further the device incorporates an original (and
patented) short circuit protection system comprising an arrangement for automatically limiting the
dissipated power so as to keep the working point
of the output transistors within their safe operating
area. A conventional thermal shut-down system is
also included.
Pentawatt
Parameter
Value
Unit
18
Vs
Supply voltage
Vi
Input voltage
Vi
15
Io
3.5
20
-40 to 150
Ptot
Tstg, Tj
Vs
TYPICAL APPLICATION
March 1993
1/11
TDA2030
PIN CONNECTION (top view)
+VS
OUTPUT
-VS
INVERTING INPUT
NON INVERTING INPUT
TEST CIRCUIT
2/11
TDA2030
THERMAL DATA
Symbol
R th j-case
Parameter
Thermal resistance junction-case
Value
Unit
C/W
max
ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Vs = 14V, T amb = 25C unless otherwise
specified)
Symbol
Parameter
Vs
Supply voltage
Id
Ib
Vos
Ios
Po
Output power
Test conditions
Distortion
Power Bandwidth
(-3 dB)
Ri
Gv
Gv
eN
iN
SVR
Typ.
Max.
Unit
18
40
60
mA
0.2
20
mV
20
200
nA
Vs = 18V
d = 0.5%
Gv = 30 dB
f = 40 to 15,000 Hz
RL = 4
RL = 8
d = 10%
f = 1 KHz
RL = 4
RL = 8
Min.
12
8
14
9
W
W
18
11
W
W
Gv = 30 dB
Po = 0.1 to 12W
RL = 4
Gv = 30 dB
f = 40 to 15,000 Hz
0.2
0.5
Po = 0.1 to 8W
RL = 8
Gv = 30 dB
f = 40 to 15,000 Hz
0.1
0.5
Gv = 30 dB
Po = 12W
R L = 4
0.5
f = 1 kHz
29.5
B = 22 Hz to 22 KHz
RL = 4
Gv = 30 dB
Rg = 22 k
Vripple = 0.5 Veff
fripple = 100 Hz
Id
Drain current
Po = 14W
Po = W
Tj
R L = 4
R L = 8
40
10 to 140,000
Hz
90
dB
30
30.5
dB
10
80
200
pA
50
dB
900
500
mA
mA
145
3/11
TDA2030
Figure 1. Output power vs.
supply voltage
F ig u re 3 . Di stor ti on v s.
output power
Fi gur e 4. Di stortion v s.
output power
F ig u re 6 . Di stor ti on v s.
frequency
F igu r e 7. Di stor ti on vs .
frequency
4/11
TDA2030
Figure 10. Supply voltage
rejection vs. voltage gain
APPLICATION INFORMATION
Figure 13. Typical amplifier
with split power supply
5/11
TDA2030
APPLICATION INFORMATION (continued)
Figure 17. Bridge amplifier configuration with split power supply (Po = 28W, Vs = 14V)
6/11
TDA2030
PRACTICAL CONSIDERATIONS
Printed circuit board
The layout shown in Fig. 16 should be adopted by
the designers. If different layouts are used, the
ground points of input 1 and input 2 must be well
decoupled from the ground return of the output in
which a high current flows.
Assembly suggestion
No electrical isolation is needed between the
Component
Recomm.
value
R1
22 k
Increase of gain
R2
680
Increase of gain
R3
22 k
Increase of input
impedance
Decrease of input
impedance
R4
Frequency stability
Danger of osccilat. at
high frequencies
with induct. loads
R5
3 R2
Upper frequency
cutoff
C1
1 F
Input DC
decoupling
Increase of low
frequencies cutoff
C2
22 F
Inverting DC
decoupling
Increase of low
frequencies cutoff
C3, C4
0.1 F
Supply voltage
bypass
Danger of
oscillation
C5, C6
100 F
Supply voltage
bypass
Danger of
oscillation
C7
0.22 F
Frequency stability
Danger of oscillation
1
2 B R1
Upper frequency
cutoff
C8
D1, D2
1N4001
Purpose
Larger than
recommended value
Smaller bandwidth
Smaller than
recommended value
Danger of
oscillation
Larger bandwidth
7/11
TDA2030
SHORT CIRCUIT PROTECTION
The TDA2030 has an original circuit which limits the
current of the output transistors. Fig. 18 shows that
the maximum output current is a function of the
collector emitter voltage; hence the output transistors work within their safe operating area (Fig. 2).
This function can therefore be considered as being
F i gu r e 1 8. Ma ximum
o u tpu t c urr en t v s .
voltage [VCEsat ] across
each output transistor
THERMAL SHUT-DOWN
The presence of a thermal limiting circuit offers the
following advantages:
1. An overload on the output (even if it is permanent), or an abovelimit ambient temperaturecan
be easily supported since the Tj cannot be
higher than 150C.
2. The heatsink can have a smaller factor of safety
compared with that of a conventional circuit.
There is no possibility of device damage due to
high junction temperature.If for any reason, the
8/11
TDA2030
Figure 20. Output power and
d ra i n cu r ren t vs. c ase
temperature (RL = 4)
F i gu r e
2 2.
Ma ximum
allowable power dissipation
vs. ambient temperature
Dimension : suggestion.
The following table shows the length that
the heatsink in fig.23 must have for several
values of Ptot and Rth.
Ptot (W)
Length of heatsink
(mm)
Rth of heatsink
( C/W)
12
60
40
30
4.2
6.2
8.3
9/11
TDA2030
PENTAWATT PACKAGE MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
4.8
0.189
1.37
0.054
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
0.35
0.55
0.014
0.022
0.8
1.05
0.031
0.041
F1
1.4
3.4
G1
6.8
H2
H3
0.039
0.055
0.126
0.134
0.142
0.260
0.268
0.276
10.4
10.05
0.409
10.4
0.396
0.409
17.85
0.703
L1
15.75
0.620
L2
21.4
0.843
L3
22.5
0.886
L5
2.6
0.102
0.118
L6
15.1
15.8
0.594
0.622
L7
6.6
0.236
0.260
4.5
M1
0.177
Dia
0.157
3.65
3.85
0.144
0.152
D1
M1
L1
L2
G
L7
L6
F
H2
F1
Dia.
G1
L3
H3
L5
10/11
MAX.
TDA2030
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain
- Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
11/11
LM3914
Dot/Bar Display Driver
General Description
The LM3914 is a monolithic integrated circuit that senses
analog voltage levels and drives 10 LEDs, providing a linear
analog display. A single pin changes the display from a moving dot to a bar graph. Current drive to the LEDs is regulated
and programmable, eliminating the need for resistors. This
feature is one that allows operation of the whole system from
less than 3V.
The circuit contains its own adjustable reference and accurate 10-step voltage divider. The low-bias-current input
buffer accepts signals down to ground, or V, yet needs no
protection against inputs of 35V above or below ground. The
buffer drives 10 individual comparators referenced to the
precision divider. Indication non-linearity can thus be held
typically to 12%, even over a wide temperature range.
Versatility was designed into the LM3914 so that controller,
visual alarm, and expanded scale functions are easily added
on to the display system. The circuit can drive LEDs of many
colors, or low-current incandescent lamps. Many LM3914s
can be chained to form displays of 20 to over 100 segments. Both ends of the voltage divider are externally available so that 2 drivers can be made into a zero-center meter.
The LM3914 is very easy to apply as an analog meter circuit.
A 1.2V full-scale meter requires only 1 resistor and a single
3V to 15V supply in addition to the 10 display LEDs. If the 1
resistor is a pot, it becomes the LED brightness control. The
simplified block diagram illustrates this extremely simple external circuitry.
When in the dot mode, there is a small amount of overlap or
fade (about 1 mV) between segments. This assures that at
no time will all LEDs be OFF, and thus any ambiguous display is avoided. Various novel displays are possible.
DS007970
Much of the display flexibility derives from the fact that all
outputs are individual, DC regulated currents. Various effects
can be achieved by modulating these currents. The individual outputs can drive a transistor as well as a LED at the
same time, so controller functions including staging control
can be performed. The LM3914 can also act as a programmer, or sequencer.
The LM3914 is rated for operation from 0C to +70C. The
LM3914N-1 is available in an 18-lead molded (N) package.
The following typical application illustrates adjusting of the
reference to a desired value, and proper grounding for accurate operation, and avoiding oscillations.
Features
Drives LEDs, LCDs or vacuum fluorescents
Bar or dot display mode externally selectable by user
Expandable to displays of 100 steps
Internal voltage reference from 1.2V to 12V
Operates with single supply of less than 3V
Inputs operate down to ground
Output current programmable from 2 mA to 30 mA
No multiplex switching or interaction between outputs
Input withstands 35V without damage or false outputs
LED driver outputs are current regulated,
open-collectors
n Outputs can interface with TTL or CMOS logic
n The internal 10-step divider is floating and can be
referenced to a wide range of voltages
n
n
n
n
n
n
n
n
n
n
www.national.com
January 2000
LM3914
Typical Applications
0V to 5V Bar Graph Meter
DS007970-1
Note: Grounding method is typical of all uses. The 2.2 F tantalum or 10 F aluminum electrolytic capacitor is needed if leads to the LED supply are 6" or
longer.
www.national.com
1365 mW
25V
25V
35V
100 mV to V+
Conditions (Note 2)
Min
Typ
Max
Units
10
mV
15
mV
COMPARATOR
Gain (ILED/VIN)
0V VIN V+ 1.5V
No Change in Display
8
25
35
mA/mV
100
nA
35
VOLTAGE-DIVIDER
Divider Resistance
Total, Pin 6 to 4
Accuracy
(Note 3)
12
17
0.5
1.28
1.34
VOLTAGE REFERENCE
Output Voltage
Line Regulation
3V V+ 18V
0.01
0.03
%/V
Load Regulation
0.4
1.2
75
120
A
mA
OUTPUT DRIVERS
LED Current
LED Current Difference (Between
Largest and Smallest LED Currents)
LED Current Regulation
Dropout Voltage
Saturation Voltage
ILED = 20 mA
ILED = 2 mA
ILED = 20 mA
2V VLED 17V
Output Leakage
(Dot Mode)
(Note 5)
13
0.4
1.2
0.1
0.25
0.15
Pins 1018
Pin 1
10
0.12
60
mA
mA
1.5
0.4
0.1
10
0.1
10
150
450
2.4
4.2
mA
6.1
9.2
mA
SUPPLY CURRENT
Standby Supply Current
(All Outputs Off)
V+ = 5V,
IL(REF) = 0.2 mA
V+ = 20V,
IL(REF) = 1.0 mA
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
www.national.com
LM3914
LM3914
(Continued)
Note 2: Unless otherwise stated, all specifications apply with the following conditions:
3 VDC V+ 20 VDC
3 VDC VLED V+
0V VIN V+ 1.5V
0.015V VRLO 12 VDC
TA = +25C, IL(REF) = 0.2 mA, VLED = 3.0V, pin 9 connected to pin 3 (Bar Mode).
0.015V VRHI 12 VDC
For higher power dissipations, pulse testing is used.
Note 3: Accuracy is measured referred to +10.000 VDC at pin 6, with 0.000 VDC at pin 4. At lower full-scale voltages, buffer and comparator offset voltage may add
significant error.
Note 4: Pin 5 input current must be limited to 3 mA. The addition of a 39k resistor in series with pin 5 allows 100V signals without damage.
Note 5: Bar mode results when pin 9 is within 20 mV of V+. Dot mode results when pin 9 is pulled at least 200 mV below V+ or left open circuit. LED No. 10 (pin
10 output current) is disabled if pin 9 is pulled 0.9V or more below VLED.
Note 6: The maximum junction temperature of the LM3914 is 100C. Devices must be derated for operation at elevated temperatures. Junction to ambient thermal
resistance is 55C/W for the molded DIP (N package).
Definition of Terms
Accuracy: The difference between the observed threshold
voltage and the ideal threshold voltage for each comparator.
Specified and tested with 10V across the internal voltage divider so that resistor ratio matching error predominates over
comparator offset voltage.
Adjust Pin Current: Current flowing out of the reference adjust pin when the reference amplifier is in the linear region.
Comparator Gain: The ratio of the change in output current
(ILED) to the change in input voltage (VIN) required to produce it for a comparator in the linear region.
Dropout Voltage: The voltage measured at the current
source outputs required to make the output current fall by
10%.
Input Bias Current: Current flowing out of the signal input
when the input buffer is in the linear region.
DS007970-2
www.national.com
Reference Voltage vs
Temperature
DS007970-20
DS007970-21
LM3914
(Continued)
LED Current-Regulation
Dropout
DS007970-22
DS007970-23
DS007970-24
LED Current vs
Reference Loading
DS007970-25
DS007970-26
Common-Mode Limits
DS007970-27
Output Characteristics
DS007970-29
DS007970-30
DS007970-28
www.national.com
LM3914
Block Diagram
DS007970-3
www.national.com
DS007970-4
Since the 120 A current (max) from the adjust terminal represents an error term, the reference was designed to minimize changes of this current with V+ and load changes.
DS007970-5
CURRENT PROGRAMMING
A feature not completely illustrated by the block diagram is
the LED brightness control. The current drawn out of the reference voltage pin (pin 7) determines LED current. Approximately 10 times this current will be drawn through each
lighted LED, and this current will be relatively constant despite supply voltage and temperature changes. Current
drawn by the internal 10-resistor divider, as well as by the external current and voltage-setting divider should be included
in calculating LED drive current. The ability to modulate LED
brightness with time, or in proportion to input voltage and
other signals can lead to a number of novel displays or ways
of indicating input overvoltages, alarms, etc.
www.national.com
LM3914
Functional Description
LM3914
(Continued)
LED No. 1 of the second device comes on. The connection
for cascading in dot mode has already been described and is
depicted below.
As long as the input signal voltage is below the threshold of
the second LM3914, LED No. 11 is off. Pin 9 of LM3914
No. 1 thus sees effectively an open circuit so the chip is in
dot mode. As soon as the input voltage reaches the threshold of LED No. 11, pin 9 of LM3914 No. 1 is pulled an LED
drop (1.5V or more) below VLED. This condition is sensed by
comparator C2, referenced 600 mV below VLED. This forces
the output of C2 low, which shuts off output transistor Q2, extinguishing LED No. 10.
VLED is sensed via the 20k resistor connected to pin 11. The
very small current (less than 100 A) that is diverted from
LED No. 9 does not noticeably affect its intensity.
An auxiliary current source at pin 1 keeps at least 100 A
flowing through LED No. 11 even if the input voltage rises
high enough to extinguish the LED. This ensures that pin 9 of
LM3914 No. 1 is held low enough to force LED No. 10 off
when any higher LED is illuminated. While 100 A does not
normally produce significant LED illumination, it may be noticeable when using high-efficiency LEDs in a dark environment. If this is bothersome, the simple cure is to shunt LED
No. 11 with a 10k resistor. The 1V IR drop is more than the
900 mV worst case required to hold off LED No. 10 yet small
enough that LED No. 11 does not conduct significantly.
DS007970-6
www.national.com
LM3914
Typical Applications
Zero-Center Meter, 20-Segment
DS007970-7
www.national.com
LM3914
Typical Applications
(Continued)
Expanded Scale Meter, Dot or Bar
DS007970-8
*This application illustrates that the LED supply needs practically no filtering
Calibration: With a precision meter between pins 4 and 6 adjust R1 for voltage VD of 1.20V. Apply 4.94V to pin 5, and adjust R4 until LED No. 5 just lights.
The adjustments are non-interacting.
Application Example:
Grading 5V Regulators
Highest No.
LED on
Color
VOUT(MIN)
10
Red
5.54
Red
5.42
Yellow
5.30
Green
5.18
Green
5.06
5V
5
Green
4.94
Green
4.82
Yellow
4.7
Red
4.58
Red
4.46
www.national.com
10
LM3914
Typical Applications
(Continued)
Exclamation Point Display
DS007970-9
LEDs light up as illustrated with the upper lit LED indicating the actual input voltage. The display appears to increase resolution and provides an analog
indication of overrange.
DS007970-10
*The input to the Dot-Bar Switch may be taken from cathodes of other LEDs. Display will change to bar as soon as the LED so selected begins to light.
11
www.national.com
LM3914
Typical Applications
(Continued)
Bar Display with Alarm Flasher
DS007970-11
Full-scale causes the full bar display to flash. If the junction of R1 and C1 is connected to a different LED cathode, the display will flash when that LED lights,
and at any higher input signal.
DS007970-12
Hysteresis is 0.5 mV to 1 mV
www.national.com
12
LM3914
Typical Applications
(Continued)
DS007970-13
The LED currents are approximately 10 mA, and the LM3914 outputs operate in saturation for minimum dissipation.
*This point is partially regulated and decreases in voltage with temperature. Voltage requirements of the LM3914 also decrease with temperature.
13
www.national.com
LM3914
Typical Applications
(Continued)
20-Segment Meter with Mode Switch
DS007970-14
*The exact wiring arrangement of this schematic shows the need for Mode Select (pin 9) to sense the V+ voltage exactly as it appears on pin 3.
Programs LEDs to 10 mA
Application Hints
Three of the most commonly needed precautions for using
the LM3914 are shown in the first typical application drawing
showing a 0V5V bar graph meter. The most difficult problem occurs when large LED currents are being drawn, especially in bar graph mode. These currents flowing out of the
ground pin cause voltage drops in external wiring, and thus
errors and oscillations. Bringing the return wires from signal
sources, reference ground and bottom of the resistor string
(as illustrated) to a single point very near pin 2 is the best solution.
Long wires from VLED to LED anode common can cause oscillations. Depending on the severity of the problem 0.05 F
to 2.2 F decoupling capacitors from LED anode common to
pin 2 will damp the circuit. If LED anode line wiring is inaccessible, often similar decoupling from pin 1 to pin 2 will be
sufficient.
If LED turn ON seems slow (bar mode) or several LEDs light
(dot mode), oscillation or excessive noise is usually the problem. In cases where proper wiring and bypassing fail to stop
oscillations, V+ voltage at pin 3 is usually below suggested
limits. Expanded scale meter applications may have one or
both ends of the internal voltage divider terminated at rela-
www.national.com
14
(Continued)
Greatly Expanded Scale (Bar Mode Only)
DS007970-15
15
www.national.com
LM3914
Application Hints
LM3914
Application Hints
(Continued)
Non-Interacting Adjustments for Expanded Scale Meter (4.5V to 5V, Bar or Dot Mode)
DS007970-16
Other Applications
DS007970-17
www.national.com
16
LM3914
Connection Diagrams
Plastic Chip Carrier Package
Dual-in-Line Package
DS007970-18
Top View
Order Number LM3914V
See NS Package Number V20A
DS007970-19
Top View
Order Number LM3914N-1
See NS Package Number NA18A
Order Number LM3914N *
See NS Package Number N18A
* Discontinued, Life Time Buy date 12/20/99
17
www.national.com
LM3914
Physical Dimensions
www.national.com
18
Physical Dimensions
National Semiconductor
Europe
Fax: +49 (0) 1 80-530 85 86
Email: europe.support@nsc.com
Deutsch Tel: +49 (0) 1 80-530 85 85
English Tel: +49 (0) 1 80-532 78 32
Franais Tel: +49 (0) 1 80-532 93 58
Italiano Tel: +49 (0) 1 80-534 16 80
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: sea.support@nsc.com
National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
4N25
4N26
4N27
4N28
GlobalOptoisolator
The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix V must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
Symbol
Value
Unit
Reverse Voltage
VR
Volts
IF
60
mA
PD
120
mW
1.41
mW/C
INPUT LED
OUTPUT TRANSISTOR
CollectorEmitter Voltage
VCEO
30
Volts
EmitterCollector Voltage
CollectorBase Voltage
VECO
Volts
VCBO
70
Volts
IC
150
mA
PD
150
mW
1.76
mW/C
VISO
7500
Vac(pk)
PD
250
2.94
mW
mW/C
TA
55 to +100
Tstg
55 to +150
TL
260
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
SCHEMATIC
4
PIN 1.
2.
3.
4.
5.
6.
LED ANODE
LED CATHODE
N.C.
EMITTER
COLLECTOR
BASE
Min
Typ(1)
Max
Unit
VF
1.15
1.3
1.05
1.5
Volts
IR
100
Capacitance (V = 0 V, f = 1 MHz)
CJ
18
pF
Characteristic
INPUT LED
Forward Voltage (IF = 10 mA)
TA = 25C
TA = 55C
TA = 100C
OUTPUT TRANSISTOR
CollectorEmitter Dark Current
(VCE = 10 V, TA = 25C
4N25,26,27
4N28
ICEO
1
1
50
100
nA
(VCE = 10 V, TA = 100C)
All Devices
ICEO
ICBO
0.2
nA
V(BR)CEO
30
45
Volts
V(BR)CBO
70
100
Volts
V(BR)ECO
7.8
Volts
hFE
500
CCE
pF
CCB
19
pF
CEB
pF
2 (20)
1 (10)
7 (70)
5 (50)
VCE(sat)
0.15
0.5
Volts
ton
2.8
toff
4.5
tr
1.2
COUPLED
IC (CTR)(2)
mA (%)
tf
1.3
VISO
7500
Vac(pk)
RISO
1011
CISO
0.2
pF
1.
2.
3.
4.
2
PULSE ONLY
PULSE OR DC
1.8
1.6
1.4
TA = 55C
1.2
25C
100C
1
1
10
100
IF, LED FORWARD CURRENT (mA)
1000
TYPICAL CHARACTERISTICS
10
NORMALIZED TO:
IF = 10 mA
1
0.1
0.01
IF = 10 mA
20
16
5 mA
12
8
2 mA
1 mA
0
10
50
10
7
5
NORMALIZED TO TA = 25C
2
1
0.7
0.5
0.2
0.1
60
40
20
20
40
60
80
100
100
NORMALIZED TO:
VCE = 10 V
TA = 25C
100
50
VCC = 10 V
20
t, TIME (s)
24
1
2
5
10
20
IF, LED INPUT CURRENT (mA)
28
0.5
10
VCE = 30 V
10
RL = 1000
RL = 100
0.1
20
40
60
80
100
1
0.1
tf
10 V
0
{
tf
tr
tr
0.2
0.5
1
2
5
10
20
IF, LED INPUT CURRENT (mA)
50
100
VCC = 10 V
100
70
50
RL = 1000
20
10
7
5
100
10
VCC = 10 V
20
RL = 1000
10
7
5
100
10
2
1
0.1
0.2
0.5 0.7 1
5 7 10
20
1
0.1
50 70 100
0.2
0.5 0.7 1
5 7 10
20
50 70 100
4
IF = 0
IB = 7 A
18
6 A
16
5 A
4 A
3 A
1
10
12
14
16
C, CAPACITANCE (pF)
12
10
CEB
8
6
4
1 A
20
f = 1 MHz
CCB
14
2 A
18
CLED
CCE
0
0.05 0.1
0.2
0.5
10
20
V, VOLTAGE (VOLTS)
TEST CIRCUIT
WAVEFORMS
INPUT PULSE
VCC = 10 V
IF = 10 mA
RL = 100
10%
INPUT
OUTPUT
OUTPUT PULSE
90%
tr
ton
tf
toff
50
A
6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
B
1
F 4 PL
SEATING
PLANE
J 6 PL
0.13 (0.005)
G
M
E 6 PL
D 6 PL
0.13 (0.005)
T A
T B
DIM
A
B
C
D
E
F
G
J
K
L
M
N
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.300 BSC
0
15
0.015
0.100
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
7.62 BSC
0
15
0.38
2.54
ANODE
CATHODE
NC
EMITTER
COLLECTOR
BASE
THRU HOLE
A
6
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F 4 PL
H
C
T
G
J
K 6 PL
E 6 PL
0.13 (0.005)
D 6 PL
0.13 (0.005)
T A
SEATING
PLANE
T B
SURFACE MOUNT
DIM
A
B
C
D
E
F
G
H
J
K
L
S
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.020
0.025
0.008
0.012
0.006
0.035
0.320 BSC
0.332
0.390
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.51
0.63
0.20
0.30
0.16
0.88
8.13 BSC
8.43
9.90
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
A
6
B
1
F 4 PL
C
T
SEATING
PLANE
DIM
A
B
C
D
E
F
G
J
K
L
N
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.400
0.425
0.015
0.040
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
10.16
10.80
0.38
1.02
D 6 PL
E 6 PL
0.13 (0.005)
T A
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
www.fairchildsemi.com