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Centro de Educao Profissional Irmo Mrio Cristvo

Curso Tcnico em Mecatrnica


Disciplina de Eletrnica Analgica

Apostila de Laboratrio de Eletrnica Analgica


Prof. Marcelo do C.C. Gaiotto.

Aluno:________________________________________ Turno:_____________

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

EXPERINCIA 1
Objetivos:
Conhecer os equipamentos utilizados para efetuar as prticas;
Iniciar as prticas em circuitos com diodo retificador e diodo zener.
Comprovar o funcionamento dos diodos na 1 e 2 aproximaes.
Tempo de Execuo: ____ aulas

Desenvolvimento
Equipamentos e materiais necessrios:
3 - diodos 1N4007 por aluno;
1 - diodo Zener de 5V1/500mW por aluno;
10 - resistores de 1K de 1/8W;
1 - potenciometro de 10K por aluno;
1 - placa de montagem com pontes de terminais para cada aluno;
2 - multmetro analgico ou digital;
2 - ferro de solda;
1 - Fonte Analgica Tektronix;
* - Solda;
2 - suporte para ferro de solda;
* - Cabos banana-banana e banana- garra;
1) Para cada um dos circuitos (1, 2, 3, 4, 5, 6, 7 e 8), calcule as correntes e
tenses nos resistores com os diodos em 1 e 2 aproximaes.
2) Somente aps o clculo monte os circuitos na placa de pontes de terminais;
3) Realize as medidas de tenso sobre os resistores e os diodos, tambm e nos
pontos indicados para cada circuito procurando preencher com cuidado a sua
tabela.(Ex: VAB)
4) Monte e identifique quais so as funes Lgicas dos circuitos 9 e 10.

Relatrio:
Fazer relatrio detalhado (1 por Aluno) mostrando todas as caractersticas e
concluses observadas nesta experincia, entregando-o na data estabelecida.

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Desenvolvimento do Circuito 1 Clculos

Tabela do Circuito 1
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
D1
3

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Desenvolvimento do Circuito 2 Clculos

Tabela do Circuito 2
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
D1

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Desenvolvimento do Circuito 3 Clculos

Tabela do Circuito 3
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
R2
R3
D1
5

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Desenvolvimento do Circuito 4 Clculos

Tabela do Circuito 4
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
R2
R3
D1
6

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Desenvolvimento do Circuito 5 Clculos

Tabela do Circuito 5
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
R2
R3
D1
D2
D3
VAB
7

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Desenvolvimento do Circuito 6 Clculos

Tabela do Circuito 6
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
D1
Com a fonte em 0V, Observe o que acontece quando voc aumenta a
tenso em passos de 0,5V at o valor mximo de 10V. Anote suas
observaes!

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Desenvolvimento do Circuito 7 Clculos

Tabela do Circuito 7
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
D1
Com a fonte em 0V, Observe o que acontece quando voc aumenta a tenso
em passos de 0,5V at o valor mximo de 10V. Anote suas observaes!

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Desenvolvimento do Circuito 8 Clculos

Tabela do Circuito 8
Valor de
Valor de
Valor Valor de
Tenso
Corrente
de
Corrente
Calculado
Calculada Tenso Medida
em 2
em 2
Medida
(A)
Aproximao Aproximao
(V)
(V)
(A)
R1
D1
Observe o que acontece quando voc varia o potencimetro. Anote suas
observaes!

10

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Circuito 9

Sada

Coloque as combinaes Binrias e observe o que acontece na sada. Anote suas


observaes!

Circuito 10

Sada

Coloque as combinaes Binrias e observe o que acontece na sada. Anote suas


observaes!

11

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Protocolo de recebimento de Relatrio esta parte fica no caderno de Laboratrio
Relatrio Recebido em : ______/______/______
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________

Cortar aqui

----------------------------------------------

Esta parte deve ser anexada no relatrio.


Aluno:___________________________________________________ Turno: _____________
Relatrio Recebido em : ______/______/______

1. Circuito 1: ____________________________________________ Visto:_______


2. Circuito 2: ____________________________________________ Visto:_______
3. Circuito 3: ____________________________________________ Visto:_______
4. Circuito 4: ____________________________________________ Visto:_______
5. Circuito 5: ____________________________________________ Visto:_______
6. Circuito 6: ____________________________________________ Visto:_______
7. Circuito 7: ____________________________________________ Visto:_______
8. Circuito 8: ____________________________________________ Visto:_______
9. Circuito 9: ____________________________________________ Visto:_______
10. Circuito 10:____________________________________________Visto:_______

12

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

EXPERINCIA 2
Objetivos:
Conhecer os equipamentos utilizados para efetuar as prticas;
Iniciar as prticas de retificadores.
Comprovar o funcionamento dos retificadores com e sem filtros
capacitivos.
Tempo de Execuo: ____ aulas

Desenvolvimento
Equipamentos e materiais necessrios:
1 - transformador de 12V+12V ou 9V+9V;
1 - osciloscpio analgico;
1 - placa de montagem com pontes de terminais; (de cada equipe)
1 - multmetro digital MINIPA;
1 - suporte para ferro de solda;
* - Cabos banana-banana e banana- garra;
1) Medir as formas de onda da sada de calibrao do osciloscpio,
apresentando os ajustes de Volts/Div. dos canais 1 e 2, Time/Div. E ajustes
das pontas de prova. Apresente ainda a freqncia e a tenso pico-a-pico.
2) Medir e apresentar as formas de onda do secundrio do transformador
apresentando os valores para: Freqncia, Perodo, Tenso pico a pico, e
tenso RMS.
3) Implementar um circuito retificador de meia onda, anotando as formas de onda
de entrada, sada e seus valores de pico;
4) Testar o circuito montado anteriormente com capacitores eletrolticos de 10,
100, e 1000uF, e anotar as formas de onda da tenso de sada;
5) Implementar um circuito retificador de onda completa com 2 diodos, anotando
as formas de onda de entrada, sada e seus valores de pico;
6) Testar o circuito montado anteriormente com capacitores eletrolticos de 10,
100, e 1000uF, e anotar as formas de onda da tenso de sada;
7) Implementar um circuito retificador de onda completa em Ponte (4 diodos),
anotando as formas de onda de entrada, sada e seus valores de pico;
8) Testar o circuito montado anteriormente com capacitores eletrolticos de 10,
100, e 1000uF, e anotar as formas de onda da tenso de sada;
*obs: utilizar um resistor de carga para os retificadores de 1K.

Relatrio:
Fazer relatrio detalhado (1 por Aluno) mostrando todas as caractersticas e concluses
observadas nesta experincia, entregando-o na data estabelecida.

13

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Projeto ponto de calibrao do osciloscpio: ____________

Visto Projeto:___________

Escala Volts/DIV
Canal1:____________Ponta de Prova:_____
Canal2:____________Ponta de Prova:_____
Escala Time/DIV
TIME/DIV:_____________

Observaes

14

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Projeto transformador e osciloscpio

Visto Projeto:___________

Escala Volts/DIV
Canal1:____________Ponta de Prova:_____
Canal2:____________Ponta de Prova:_____
Escala Time/DIV
TIME/DIV:_____________

Observaes

15

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Projeto:_________________________________________________ Visto Projeto:___________
Escala Volts/DIV
Canal1:____________Ponta de Prova:_____
Canal2:____________Ponta de Prova:_____
Escala Time/DIV
TIME/DIV:_____________

Observaes

16

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Projeto:_________________________________________________ Visto Projeto:___________


Escala Volts/DIV

Escala Volts/DIV

Canal1:_____________Ponta de Prova:_____

Canal1:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Escala Time/DIV

Escala Time/DIV

TIME/DIV:_____________

TIME/DIV:_____________

Observaes

17

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Projeto:_________________________________________________ Visto Projeto:___________
Escala Volts/DIV
Canal1:_____________Ponta de
Prova:_____
Canal2:_____________Ponta de
Prova:_____
Escala Time/DIV
TIME/DIV:_____________

Observaes

18

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Projeto:_________________________________________________ Visto Projeto:___________


Escala Volts/DIV

Escala Volts/DIV

Canal1:_____________Ponta de Prova:_____

Canal1:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Escala Time/DIV

Escala Time/DIV

TIME/DIV:_____________

TIME/DIV:_____________

Observaes

19

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Projeto:_________________________________________________ Visto Projeto:___________
Escala Volts/DIV
Canal1:_____________Ponta de
Prova:_____
Canal2:_____________Ponta de
Prova:_____
Escala Time/DIV
TIME/DIV:_____________

Observaes

20

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Projeto:_________________________________________________ Visto Projeto:___________


Escala Volts/DIV

Escala Volts/DIV

Canal1:_____________Ponta de Prova:_____

Canal1:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Escala Time/DIV

Escala Time/DIV

TIME/DIV:_____________

TIME/DIV:_____________

Observaes

21

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Protocolo de recebimento de Relatrio esta parte fica no caderno de Laboratrio
Relatrio Recebido em : ______/______/______
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________

Cortar aqui

----------------------------------------------

Esta parte deve ser anexada no relatrio.


Aluno:___________________________________________________ Turno: _____________
Relatrio Recebido em : ______/______/______

1. Projeto:_______________________________________________Visto:_______
2. Projeto:_______________________________________________Visto:_______
3. Projeto:_______________________________________________Visto:_______
4. Projeto:_______________________________________________Visto:_______
5. Projeto:_______________________________________________Visto:_______
6. Projeto:_______________________________________________Visto:_______
7. Projeto:_______________________________________________Visto:_______
8. Projeto:_______________________________________________Visto:_______

22

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

EXPERINCIA 3
Objetivos:
Aprender como interpretar os dados da especificao tcnica do
fabricante;
Conhecer os equipamentos utilizados para efetuar as prticas;
Comprovar o funcionamento dos ceifadores polarizados.
Tempo de Execuo: ____ aulas

Desenvolvimento
Equipamentos e materiais necessrios:
1 Gerador de Funes;
1 Fonte Analgica Tektronix;
2 Pontas de prova para osciloscpio;
1 Osciloscpio analgico;
2 Diodos de sinal 1N4148
1 Resistor de 1K
1 Placa de montagem com pontes de terminais; (de cada equipe)
1 Multmetro digital MINIPA;
1 Suporte para ferro de solda;
* - Cabos banana-banana e banana- garra;
1. Implemente o seguinte circuito Ceifador polarizado.

Siga o seguinte procedimento para o circuito acima:


1. Ajuste o canal 1 do osciloscpio em AC;
2. Ajuste o canal 2 do osciloscpio em DC;
3. Selecione a forma de onda do gerador como Senoidal;
4. Conecte o gerador de funes no canal 1 do osciloscpio e ajuste a
freqncia para 1KHz;
5. Agora, ajuste a amplitude do gerador para fornecer 15Volts de pico-a-pico;
6. Conecte o gerador de funes na entrada do circuito indicada como Vi
juntamente com o canal 1 do osciloscpio (respeite a indicao de + e - );
7. Conecte o canal 2 do osciloscpio na sada do circuito indicada como Vo;
8. Explicar teoricamente o funcionamento para justificar os resultados de sada;
9. Troque a forma de onda para Triangular;
10. Explicar teoricamente o funcionamento para justificar os resultados de sada;
11. Troque a forma de onda para quadrada;
12. Explicar teoricamente o funcionamento para justificar os resultados de sada;
13. Inverta a polaridade da fonte V1 e realize novamente os itens 1 6 7 8 9
10, para este novo circuito.
23

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Projeto:_________________________________________________ Visto Projeto:___________


Escala Volts/DIV
Canal1:_____________Ponta de
Prova:_____
Canal2:_____________Ponta de
Prova:_____
Escala Time/DIV
TIME/DIV:_____________

Observaes

24

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Projeto:_________________________________________________ Visto Projeto:___________


Escala Volts/DIV

Escala Volts/DIV

Canal1:_____________Ponta de Prova:_____

Canal1:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Escala Time/DIV

Escala Time/DIV

TIME/DIV:_____________

TIME/DIV:_____________

Observaes

25

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Projeto:_________________________________________________ Visto Projeto:___________
Escala Volts/DIV
Canal1:_____________Ponta de
Prova:_____
Canal2:_____________Ponta de
Prova:_____
Escala Time/DIV
TIME/DIV:_____________

Observaes

26

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Projeto:_________________________________________________ Visto Projeto:___________


Escala Volts/DIV

Escala Volts/DIV

Canal1:_____________Ponta de Prova:_____

Canal1:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Escala Time/DIV

Escala Time/DIV

TIME/DIV:_____________

TIME/DIV:_____________

Observaes

27

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Protocolo de recebimento de Relatrio esta parte fica no caderno de Laboratrio
Relatrio Recebido em : ______/______/______
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________

Cortar aqui

----------------------------------------------

Esta parte deve ser anexada no relatrio.


Aluno:___________________________________________________ Turno: _____________
Relatrio Recebido em : ______/______/______

1) Projeto:_______________________________________________

Visto:_______

2) Projeto:_______________________________________________

Visto:_______

3) Projeto:_______________________________________________

Visto:_______

4) Projeto:_______________________________________________

Visto:_______

5) Projeto:_______________________________________________

Visto:_______

6) Projeto:_______________________________________________

Visto:_______

28

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

EXPERINCIA 4
Objetivos:
Aprender como interpretar os dados da especificao tcnica do
fabricante;
Conhecer os equipamentos utilizados para efetuar as prticas;
Comprovar o funcionamento dos Grampeadores e Multiplicadores.
Tempo de Execuo: ____ aulas

Desenvolvimento
Equipamentos e materiais necessrios:
1 Osciloscpio analgico;
2 Pontas de prova para osciloscpio;
2 Diodos 1N4004 ou 1N4007
2 Capacitores eletrolticos de 1000uF/25V ou maior
1 Resistor de 1K
1 Placa de montagem com pontes de terminais; (de cada equipe)
1 Suporte para ferro de solda;
* - Cabos banana-banana e banana- garra;
1. Implemente o seguinte circuito Grampeador.

Siga o seguinte procedimento para o circuito acima:


1. Ajuste o canal 1 do osciloscpio em AC;
2. Ajuste o canal 2 do osciloscpio em DC;
3. Conecte o canal 1 do osciloscpio na sada do transformador que est sendo
utilizada e o canal 2 na sada do circuito indicada como Vout;
4. Explique teoricamente o funcionamento para justificar os resultados de sada,
identificando qual o tipo de grampeador (positivo ou negativo);

29

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

2. Implemente o seguinte circuito Multiplicador:

Siga o seguinte procedimento para o circuito acima:


1. Ajuste o canal 1 do osciloscpio em DC cuidado s utilize o canal 1 ;
2. Conecte o canal 1 do osciloscpio na sada do circuito indicada como Vout;
3. Explique teoricamente o funcionamento para justificar os resultados de sada,
identificando qual o tipo de multiplicador (meia onda ou onda completa);

Relatrio:
Fazer relatrio detalhado (1 por Aluno) mostrando todas as caractersticas e concluses
observadas nesta experincia, entregando-o na data estabelecida.

30

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Projeto:_________________________________________________ Visto Projeto:___________


Escala Volts/DIV

Escala Volts/DIV

Canal1:_____________Ponta de Prova:_____

Canal1:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Escala Time/DIV

Escala Time/DIV

TIME/DIV:_____________

TIME/DIV:_____________

Observaes

31

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Protocolo de recebimento de Relatrio esta parte fica no caderno de Laboratrio
Relatrio Recebido em : ______/______/______
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________

Cortar aqui

----------------------------------------------

Esta parte deve ser anexada no relatrio.


Aluno:___________________________________________________ Turno: _____________
Relatrio Recebido em : ______/______/______

1) Projeto:_______________________________________________

Visto:_______

2) Projeto:_______________________________________________

Visto:_______

32

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

EXPERINCIA 5
Objetivos:
Aprender como interpretar os dados da especificao tcnica do
fabricante;
Conhecer os equipamentos utilizados para efetuar as prticas;
Iniciar o trabalho com transistores como chave.
Tempo de Execuo: ____ aulas

Desenvolvimento
Equipamentos e materiais necessrios:
1 Fonte Analgica;
1 Multmetro;
1 Placa de Pontes de Terminais da EQUIPE;
* - Resistores diversos e demais componentes da EQUIPE;
* - Cabos banana jacar da EQUIPE.
1) Considerando o circuito abaixo, calcule e realize as medidas pedidas:

a) Medir o ganho do transistor no multmetro (hFE = beta) e anotar o valo na


tabela;
b) Para efeito de clculo considerar VBE = 0,7V e VBB = Vi (podendo ser 0V
e 5V);
c) Calcular a corrente IC e IB atravs das formulas:
=
d)
e)
f)
g)
h)

IC
VBB VBE
e IB =
;
IB
Rb

Com o ponto Vi em 5V: medir as tenses VBE e VCE;


Com o ponto Vi em GND: medir as tenses VBE e VCE;
Com o ponto Vi em 5V: medir as correntes de base (IB) e do coletor (IC);
Com o ponto Vi em GND: medir as correntes de base (IB) e do coletor (IC);
Comparar com as correntes e tenses tericas calculadas respectivamente
e anotar as concluses justificando-as;

33

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

2) Considerando o circuito abaixo, calcule e realize as medidas pedidas:

Figura: acionamento direto do rel.


a) Medir a corrente de acionamento do Rel para acionamento direto;
b) Utilizar o valor do ganho do transistor (hFE = beta) da experincia anterior;
c) Para efeitos de clculo da polarizao, considerar VBE = 0,7V e VBB =
12V;
d) Calcular a corrente IC e IB atravs das formulas:
=

IC
VBB VBE
e IB =
;
IB
Rb

e) Implementar o circuito de acionamento com transistor;

Acionamento com transistor


f)
g)
h)
i)

Com o ponto Vin em 12V: medir as tenses VBE e VCE;


Com o ponto Vin em GND: medir as tenses VBE e VCE;
Com o ponto Vin em 12V: medir as correntes de base (IB) e do coletor (IC);
Com o ponto Vin em GND: medir as correntes de base (IB) e do coletor
(IC);
j) Comparar com as correntes e tenses tericas calculadas respectivamente
e anotar as concluses justificando-as;
Relatrio:
Fazer relatrio detalhado (1 por aluno) mostrando todas as caractersticas e
concluses observadas nesta experincia, entregando-o na data estabelecida
para esta turma.

34

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Desenvolvimento do Circuito Clculos

Tabela do Circuito
Ganho do transistor

Bc

=
Vin = 12V

Vi = GND

IC calculado
IB calculado
IC medido
IB medido
VCE medido
VBE medido
Observaes

35

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Protocolo de recebimento de Relatrio esta parte fica no caderno de Laboratrio
Relatrio Recebido em : ______/______/______
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________

Cortar aqui

----------------------------------------------

Esta parte deve ser anexada no relatrio.


Aluno:___________________________________________________ Turno: _____________
Relatrio Recebido em : ______/______/______

1) Projeto:_______________________________________________

Visto:_______

2) Projeto:_______________________________________________

Visto:_______

36

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

EXPERINCIA 6
Objetivos:
Aprender como interpretar os dados da especificao tcnica do
fabricante;
Conhecer os equipamentos utilizados para efetuar as prticas;
Iniciar o trabalho com transistores como AMPLIFICADORES
Tempo de Execuo: ____ aulas

Desenvolvimento:
Equipamentos e materiais necessrios:
1 Fonte Analgica;
1 Osciloscpio Digital;
2 Pontas de prova para osciloscpio;
1 Multmetros;
1 Placa de Pontes de Terminais da EQUIPE;
Cabos banana jacar da EQUIPE;
Componentes diversos da EQUIPE.
1) Considerando o circuito a seguir, calcule os resistores de polarizao e realize
as medidas pedidas com os seguintes dados: iB = 250A, VCC = 12V e VBB =
2V. Utilize as formulas propostas para realizao dos clculos.
a) Com o circuito alimentado corretamente e sem conectar o gerador de
funes e o osciloscpio, medir a corrente IC;
b) Conecte o canal 1 do osciloscpio no gerador de funes e ajuste a
freqncia para 1KHz, com forma de onda senoidal;
c) Conecte o gerador de funes juntamente com o canal 1 do
osciloscpio entrada do circuito (Vin) com seu ajuste de amplitude
em ZERO;
d) Conecte o canal 2 do osciloscpio na sada do circuito indicada como
Vout.
e) Comece a aumentar a amplitude do gerador at obter o melhor sinal de
sada amplificado, e sem distoro;
f) Anotar os valores corretos de amplitude encontrados;
g) Desenhar a forma de onda do canal 1 (Vin) e canal 2 (Vout) do
osciloscpio (entrada e sada respectivamente);
h) Mantendo o valor da amplitude encontrado, aumente gradativamente a
freqncia no gerador de funes at obter uma reduo do ganho de
sada do amplificador em 70,7% do valor mximo obtido no item f;
Relatrio:
Fazer relatrio detalhado (1 por aluno) mostrando todas as caractersticas e
concluses observadas nesta experincia, entregando-o na data estabelecida
para esta turma.

37

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Circuito de polarizao por divisor de tenso na base


Desenvolvimento do Circuito Clculos

RB =

R1 R 2
R1 + R 2

V BB = 12
IB =

R2
R1 + R 2

V BB
RB

R L = 3,3 k
R E = 1k

Observaes dos clculos

38

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Projeto:_________________________________________________ Visto Projeto:___________


Escala Volts/DIV

Escala Volts/DIV

Canal1:_____________Ponta de Prova:_____

Canal1:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Canal2:_____________Ponta de Prova:_____

Escala Time/DIV

Escala Time/DIV

TIME/DIV:_____________

TIME/DIV:_____________

Observaes das medidas

39

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica


Protocolo de recebimento de Relatrio esta parte fica no caderno de Laboratrio
Relatrio Recebido em : ______/______/______
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________

Cortar aqui

----------------------------------------------

Esta parte deve ser anexada no relatrio.


Aluno:___________________________________________________ Turno: _____________
Relatrio Recebido em : ______/______/______

1) Projeto:_______________________________________________

Visto:_______

40

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

ANEXO Material de apoio

41

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

PROJETO DA FONTE REGULADA VERSO 2


FONTEC
Curso Tcnico em Mecatrnica
Disciplina de Eletrnica Analgica
Prof. Marcelo do C. C. Gaiotto

43

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Funcionamento
O primeiro passo para construo de uma fonte de alimentao saber qual a
tenso de sada que se deseja ter. Neste projeto de fonte possumos 2 tenses, 1
regulada e uma fixa de 5V/1A. A tenso regulada ser aborda mais frente.
Como a rede eltrica possui sua tenso eficaz muito mais alta que a grande
maioria dos equipamentos eletrnicos opera, necessitamos de um componente
que reduza este valor de tenso alternada. Como estamos considerando uma
fonte de alimentao linear utilizaremos um transformador, para realizar este
servio. O Diagrama em blocos da figura 1 representa esta seqncia.

Figura 1. Diagrama de blocos de acoplamento com transformador.


Toda fonte de alimentao de corrente contnua possui um bloco de
retificao. A configurao utilizada no bloco retificador do tipo retificador de
onda completa com dois diodos (D1 e D2). Este responsvel em tornar a
tenso alternada entregue pelo transformador em contnua, ou seja, elimina a
mudana de polaridade da tenso. Vejamos agora como fica esta alterao no
diagrama da figura 2.

Figura 2. Diagrama de blocos da etapa de retificadores.


Embora a tenso de sada do retificador seja contnua, ela ainda pulsada,
ou seja, muda de zero at o valor mximo. Para que esta oscilao (RIPPLE) no
prejudique o funcionamento nem os componentes de um circuito que possa ser
conectado nesta fonte devemos inserir uma nova etapa, a etapa de filtragem, que
ser composta pelo capacitor eletroltico (C1). O novo diagrama de blocos est
apresentado na figura 3.

Figura 3. Diagrama de blocos com a etapa de filtragem.


44

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Este projeto possui ainda capacitores cermicos adicionados ao circuito para


aumentar o coeficiente de filtragem.
At este ponto no temos novidades e dificuldades quanto configurao e
funcionamento. Para possibilitar a variao da tenso de sada de forma regulada
e controlada utilizamos uma etapa reguladora, como por exemplo, a do diagrama
em blocos da figura 4.

Figura 4. Diagrama de blocos da etapa de Regulagem.


O circuito regulador de tenso utilizado para desempenhar esta funo o
LM317. Este possibilita o acionamento de uma carga com consumo de at 1,5A
em sua sada. Repare que a sada do regulador possui um capacitor eletroltico,
possibilitando uma segunda filtragem, tornando nossa sada mais estvel. O
diagrama em blocos da parte regulada da fonte apresentado na figura 5.

Figura 5. Diagrama em blocos da parte regulada da fonte.


O circuito bsico de configurao do regulador utilizado foi extrado das folhas
de dados dos fabricantes que esto em anexo neste manual.
A fonte fixa composta por outro regulador de tenso LM317, porm com
seus resistores de ajuste fixos para que a tenso em sua sada seja de 5V, e
tambm um capacitor eletroltico aps o regulador, possibilitando uma segunda
filtragem, tornando nossa sada mais estvel, como desejvel para qualquer
circuito de alimentao para circuitos digitais da famlia TTL.
1. Procedimentos para clculos dos resistores das fontes reguladas
Podemos alterar as caractersticas de nossa fonte se calcularmos os valores
dos resistores que realizam a configurao do regulador, utilizando a seguinte
frmula fornecida pelo fabricante:

Vout = Vref * (1 +

Pot
) + ( IADJ * P 2)
R1
45

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Onde:
Vo- tenso de sada ;
Iadj corrente de ajuste.
POT Valor do potencimetro utilizado.
Atravs deste clculo, podemos alterar o valor de tenso mximo que o
regulador apresentar em sua sada. Este procedimento deve ser realizado com
bastante cuidado e ateno, pois sero necessrias alteraes de componentes do
circuito como:

Adequar os Capacitores eletrolticos tenso de operao;


Transformador tenso e corrente de sada para o valor que se
deseja trabalhar, levando em considerao as quedas de tenso dos
componentes envolvidos (***calcular o transformador***)
Fusvel redimensionar o fusvel para o novo circuito;
Re-projetar placa se for necessrio;

Esquema eltrico da fonte da FonTec V2.

46

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Esquema de ligao do fusvel, da chave de seleo de tenso, da chave


liga/desliga ao transformador e a rede eltrica.

Placa de Circuito impresso da fonte de tenso vista dos componentes, no


invertida e fora da medida real.

Placa de Circuito impresso da fonte de tenso vista dos componentes com as


trilhas, no invertida e fora da medida real.

47

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Exemplo de Caixa de montagem Patola PB209 e PB211.

Exemplo de disposio dos itens do painel frontal.


(no est em tamanho real apenas um exemplo)

Exemplo de disposio dos itens do painel traseiro.


(no est em tamanho real apenas um exemplo)

49

Centro de Educao Profissional Irmo Mrio Cristvo Laboratrio de Eletrnica Analgica

Lista de componentes da Fonte Regulada FONTEC V2


Loja:_______________________________

Fone:____________________

Atendente:___________________________________
QTD DESCRIO DOS COMPONENTES E MATERIAIS
1
1
2
2
2
2
1
1
1
2
1
1
1
1
1
1
1
1
5
2

1
1
1
1
2
1
2
8
18
6

Preo
unitrio R$

Transformador de 110V/220V de primrio, 15V+15V / 1A 2A


placa de fenolite face simples de 50x100 (mm)
LM317
Capacitores cermicos de 100nF
diodos retificadores 1N5404
diodos retificadores 1N4004
chave HH com marcao 110/200V
chave de alavanca 3 contatos e duas posies
capacitor eletroltico de 2200uF/50V
capacitor eletroltico de 2200uF/25V
borne para painel vermelho
borne para painel preto
borne para painel amarelo
porta fusvel para painel pequeno
fusvel de 500mA pequeno
rabicho para alimentao
Knob
potencimetro de 4K7 ou 5K
ps de borracha pequenos para colar
dissipadores DM830
metro de fio Preto 22
metro de fio vermelho 22
led vermelho 5mm
Suporte para led de 5mm para painel
caixa para montagem patola PB209 ou PB 211 preta
resistor de 1K
resistor de 270R
resistor de 680R
resistor de 120R
Parafusos M3x10 cabea cnica
Porcas para parafuso M3
Arruelas para parafuso M3
Total dos componentes

50

1N4001, 1N4002, 1N4003,


1N4004, 1N4005, 1N4006,
1N4007
1N4004 and 1N4007 are Preferred Devices

Axial Lead Standard


Recovery Rectifiers

http://onsemi.com

This data sheet provides information on subminiature size, axial


lead mounted rectifiers for generalpurpose lowpower applications.

LEAD MOUNTED RECTIFIERS


501000 VOLTS
DIFFUSED JUNCTION

Mechanical Characteristics

Case: Epoxy, Molded


Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable


Lead and Mounting Surface Temperature for Soldering Purposes:
220C Max. for 10 Seconds, 1/16 from case
Shipped in plastic bags, 1000 per bag.
Available Tape and Reeled, 5000 per reel, by adding a RL suffix to
the part number
Available in FanFold Packaging, 3000 per box, by adding a FF
suffix to the part number
Polarity: Cathode Indicated by Polarity Band
Marking: 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006,
1N4007

CASE 5903
AXIAL LEAD
PLASTIC

MARKING DIAGRAM
AL
1N
400x
YYWW
AL
= Assembly Location
1N400x = Device Number
x
= 1, 2, 3, 4, 5, 6 or 7
YY
= Year
WW
= Work Week

MAXIMUM RATINGS
Rating

Symbol

1N4001

1N4002

1N4003

1N4004

1N4005

1N4006

1N4007

Unit

*Peak Repetitive Reverse Voltage


Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

50

100

200

400

600

800

1000

Volts

*NonRepetitive Peak Reverse Voltage


(halfwave, single phase, 60 Hz)

VRSM

60

120

240

480

720

1000

1200

Volts

VR(RMS)

35

70

140

280

420

560

700

Volts

*RMS Reverse Voltage


*Average Rectified Forward Current
(single phase, resistive load,
60 Hz, TA = 75C)

IO

1.0

Amp

*NonRepetitive Peak Surge Current


(surge applied at rated load
conditions)

IFSM

30 (for 1 cycle)

Amp

Operating and Storage Junction


Temperature Range

TJ
Tstg

65 to +175

*Indicates JEDEC Registered Data

ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.

Semiconductor Components Industries, LLC, 2001

March, 2001 Rev. 7

Publication Order Number:


1N4001/D

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007


ELECTRICAL CHARACTERISTICS*
Rating
Maximum Instantaneous Forward Voltage Drop
(iF = 1.0 Amp, TJ = 25C)
Maximum FullCycle Average Forward Voltage Drop
(IO = 1.0 Amp, TL = 75C, 1 inch leads)
Maximum Reverse Current (rated dc voltage)
(TJ = 25C)
(TJ = 100C)

Typ

Max

Unit

vF

0.93

1.1

Volts

VF(AV)

0.8

Volts

0.05
1.0

10
50

30

IR

Maximum FullCycle Average Reverse Current


(IO = 1.0 Amp, TL = 75C, 1 inch leads)

IR(AV)

*Indicates JEDEC Registered Data

ORDERING & SHIPPING INFORMATION


Device

Symbol

Package

Shipping

1N4001

Axial Lead

1000 Units/Bag

1N4001FF

Axial Lead

3000 Units/Box

1N4001RL

Axial Lead

5000/Tape & Reel

1N4002

Axial Lead

1000 Units/Bag

1N4002FF

Axial Lead

3000 Units/Box

1N4002RL

Axial Lead

5000/Tape & Reel

1N4003

Axial Lead

1000 Units/Bag

1N4003FF

Axial Lead

3000 Units/Box

1N4003RL

Axial Lead

5000/Tape & Reel

1N4004

Axial Lead

1000 Units/Bag

1N4004FF

Axial Lead

3000 Units/Box

1N4004RL

Axial Lead

5000/Tape & Reel

1N4005

Axial Lead

1000 Units/Bag

1N4005FF

Axial Lead

3000 Units/Box

1N4005RL

Axial Lead

5000/Tape & Reel

1N4006

Axial Lead

1000 Units/Bag

1N4006FF

Axial Lead

3000 Units/Box

1N4006RL

Axial Lead

5000/Tape & Reel

1N4007

Axial Lead

1000 Units/Bag

1N4007FF

Axial Lead

3000 Units/Box

1N4007RL

Axial Lead

5000/Tape & Reel

http://onsemi.com
2

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007


PACKAGE DIMENSIONS
AXIAL LEAD
CASE 5903
ISSUE M

NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.

DIM
A
B
D
F
K

F
A

MILLIMETERS
MIN
MAX
4.07
5.20
2.04
2.71
0.71
0.86
--1.27
27.94
---

F
K

http://onsemi.com
3

INCHES
MIN
MAX
0.160
0.205
0.080
0.107
0.028
0.034
--0.050
1.100
---

1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007

ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION


NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Fax Response Line: 3036752167 or 8003443810 Toll Free USA/Canada
N. American Technical Support: 8002829855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor European Support
German Phone: (+1) 3033087140 (MonFri 2:30pm to 7:00pm CET)
Email: ONlitgerman@hibbertco.com
French Phone: (+1) 3033087141 (MonFri 2:00pm to 7:00pm CET)
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then Dial 8662979322
ASIA/PACIFIC: LDC for ON Semiconductor Asia Support
Phone: 3036752121 (TueFri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
00180044223781
Email: ONlitasia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com

EUROPEAN TOLLFREE ACCESS*: 0080044223781


*Available from Germany, France, Italy, UK, Ireland

For additional information, please contact your local


Sales Representative.

http://onsemi.com
4

1N4001/D

1N4148 / 1N4448
FAST SWITCHING DIODE

Features

Fast Switching Speed


General Purpose Rectification
Silicon Epitaxial Planar Construction

Mechanical Data
Case: DO-35
Leads: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.13 grams (approx.)

DO-35
Dim

Min

25.40

Max

4.00

0.60

2.00

All Dimensions in mm

Maximum Ratings @ TA = 25C unless otherwise specified


Characteristic

Symbol

Peak Repetitive Reverse Voltage


Working Peak Reverse Voltage
DC Blocking Voltage

1N4148

Unit

100

VRRM
VRWM
VR

75

VR(RMS)

RMS Reverse Voltage

1N4448

VRM

Non-Repetitive Peak Reverse Voltage

53

Forward Continuous Current (Note 1)

IFM

Average Rectified Output Current (Note 1)

IO

150

mA

IFSM

1.0
2.0

Pd

500
1.68

mW
mW/C

RqJA

300

K/W

Tj , TSTG

-65 to +175

Non-Repetitive Peak Forward Surge Current @ t = 1.0s


@ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range

Electrical Characteristics

300

500

mA

@ TA = 25C unless otherwise specified

Characteristic

Symbol

Min

VFM

0.62

1.0
0.72
1.0

IF = 10mA
IF = 5.0mA
IF = 100mA

Maximum Peak Reverse Current

IRM

5.0
50
30
25

mA
mA
mA
nA

VR = 75V
VR = 70V, Tj = 150C
VR = 20V, Tj = 150C
VR = 20V

Capacitance

Cj

4.0

pF

VR = 0, f = 1.0MHz

Reverse Recovery Time

trr

4.0

ns

IF = 10mA to IR =1.0mA
VR = 6.0V, RL = 100W

Maximum Forward Voltage

1N4148
1N4448
1N4448

Max

Unit

Test Condition

Notes: 1. Valid provided that device terminals are kept at ambient temperature.

DS12019 Rev. B-2

1 of 2

1N4148 / 1N4448

10,000

100
IR, LEAKAGE CURRENT (nA)

IF, INSTANTANEOUS FORWARD CURRENT (mA)

1000

10

1.0

0.1

1000

100

10

VR = 20V

0.01
0

VF, INSTANTANEOUS FORWARD VOLTAGE (V)


Fig. 1 Forward Characteristics

DS12019 Rev. B-2

2 of 2

100

200

Tj, JUNCTION TEMPERATURE (C)


Fig. 2, Leakage Current vs Junction Temperature

1N4148 / 1N4448

BC548
BC548A
BC548B
BC548C

TO-92
C

NPN General Purpose Amplifier


This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100A for characteristics.

Absolute Maximum Ratings*


Symbol

TA = 25C unless otherwise noted

Parameter

Value

Units

VCEO

Collector-Emitter Voltage

30

VCES

Collector-Base Voltage

30

VEBO

Emitter-Base Voltage

5.0

IC

Collector Current - Continuous

500

mA

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD

TA = 25C unless otherwise noted

Characteristic

RJC

Total Device Dissipation


Derate above 25C
Thermal Resistance, Junction to Case

RJA

Thermal Resistance, Junction to Ambient

1997 Fairchild Semiconductor Corporation

Max

Units

BC548 / A / B / C
625
5.0
83.3

mW
mW/C
C/W

200

C/W

548-ABC, Rev B

BC548 / BC548A / BC548B / BC548C

Discrete POWER & Signal


Technologies

(continued)

Electrical Characteristics
Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO

Collector-Emitter Breakdown Voltage

IC = 10 mA, IB = 0

30

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 10 A, IE = 0

30

V(BR)CES

Collector-Base Breakdown Voltage

IC = 10 A, IE = 0

30

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10 A, IC = 0

5.0

ICBO

Collector Cutoff Current

VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = +150 C

15
5.0

nA
A

800
220
450
800
0.25
0.60
0.70
0.77

V
V
V
V

ON CHARACTERISTICS
hFE

DC Current Gain

VCE = 5.0 V, IC = 2.0 mA

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(on)

Base-Emitter On Voltage

IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA
VCE = 5.0 V, IC = 2.0 mA
VCE = 5.0 V, IC = 10 mA

548
548A
548B
548C

110
110
200
420

0.58

SMALL SIGNAL CHARACTERISTICS


hfe

Small-Signal Current Gain

NF

Noise Figure

IC = 2.0 mA, VCE = 5.0 V,


f = 1.0 kHz
VCE = 5.0 V, IC = 200 A,
RS = 2.0 k, f = 1.0 kHz,
BW = 200 Hz

125

900
10

dB

BC548 / BC548A / BC548B / BC548C

NPN General Purpose Amplifier

BC327/328

BC327/328
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC337/BC338
TO-92

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor


Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol
VCES

Parameter
Collector-Emitter Voltage
: BC327
: BC328

Value

Units

-50
-30

V
V

-45
-25

V
V

Collector-Emitter Voltage
: BC327
: BC328

VCEO

VEBO

Emitter-Base Voltage

-5

IC

Collector Current (DC)

-800

mA

PC

Collector Power Dissipation

625

mW

TJ

Junction Temperature

150

TSTG

Storage Temperature

-55 ~ 150

Electrical Characteristics Ta=25C unless otherwise noted


Symbol
BVCEO

Parameter
Collector-Emitter Breakdown Voltage
: BC327
: BC328

Test Condition
IC= -10mA, IB=0

Collector-Emitter Breakdown Voltage


: BC327
: BC328

IC= -0.1mA, VBE=0

BVEBO

Emitter-Base Breakdown Voltage

IE= -10A, IC=0

ICES

Collector Cut-off Current


: BC327
: BC328

VCE= -45V, VBE=0


VCE= -25V, VBE=0

BVCES

hFE1
hFE2

Min.

Typ.

VCE= -1V, IC= -100mA


VCE= -1V, IC= -300mA

Units

-45
-25

V
V

-50
-30

V
V

-5

V
-2
-2

DC Current Gain

Max.

100
40

-100
-100

nA
nA

630

VCE (sat)

Collector-Emitter Saturation Voltage

IC= -500mA, IB= -50mA

-0.7

VBE (on)

Base-Emitter On Voltage

VCE= -1V, IC= -300mA

-1.2

fT

Current Gain Bandwidth Product

VCE= -5V, IC= -10mA, f=20MHz

100

MHz

Cob

Output Capacitance

VCB= -10V, IE=0, f=1MHz

12

pF

V
V

hFE Classification
Classification

16

25

40

hFE1

100 ~ 250

160 ~ 400

250 ~ 630

hFE2

60-

100-

170-

2002 Fairchild Semiconductor Corporation

Rev. B1, August 2002

BC327/328

Typical Characteristics

-20

mA
- 5.0 A
I B = - 4.5m
I B = 4.0mA
A
I B = - 3.5m A
I B = - 3.0m A
I B = - 2.5m
mA
IB =
- 2.0
IB =

-400

-300

1.5
IB = -

IB=

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

-500

mA

-200

PT = 60
0mW

IB = - 1.0mA
IB = - 0.5mA

-100

A
- 80
A
- 70
I =
B

-16

IB=

A
- 60
IB=

-12

IB=

- 40

IB = -

-8

30A

0A
IB = - 2
-4

IB = - 10A
IB = 0

IB = 0

-0
-1

-2

-3

-4

-5

-10

VCE[V], COLLECTOR-EMITTER VOLTAGE

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

PULSE

hFE, DC CURRENT GAIN

V CE = - 2.0V
100

- 1.0V

10

-1

-10

-100

-30

-40

-50

Figure 2. Static Characteristic

1000

1
-0.1

-20

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-1000

-10

IC = 10 IB
PULSE
V CE(sat)

-1

-0.1

V BE(sat)

-0.01
-0.1

IC[mA], COLLECTOR CURRENT

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage


Collector-Emitter Saturation Voltage

-1000

1000

fT[MHz], GAIN-BANDWIDTH PRODUCT

IC[mA], COLLECTOR CURRENT

=6
00
mW

A
- 50

VCE = -1V
PULSE
-100

-10

-1

-0.1
-0.4

VCE = -5.0V

100

10
-0.5

-0.6

-0.7

-0.8

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage

2002 Fairchild Semiconductor Corporation

-0.9

-1

-10

-100

IC[mA], COLLECTOR CURRENT

Figure 6. Gain Bandwidth Product

Rev. B1, August 2002

BC327/328

Package Dimensions

TO-92
+0.25

4.58 0.20

4.58 0.15

0.10

14.47 0.40

0.46

1.27TYP
[1.27 0.20]

1.27TYP
[1.27 0.20]
0.20

(0.25)

+0.10

0.38 0.05

1.02 0.10

3.86MAX

3.60

+0.10

0.38 0.05

(R2.29)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. B1, August 2002

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx
FACT
ActiveArray
FACT Quiet series
Bottomless
FAST
FASTr
CoolFET
CROSSVOLT FRFET
GlobalOptoisolator
DOME
EcoSPARK
GTO
E2CMOS
HiSeC
EnSigna
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop

ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC
OPTOPLANAR

PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHER
SMART START

SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support


device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for


product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild


Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2002 Fairchild Semiconductor Corporation

Rev. I1

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

GENERAL
DATA

500 mW DO-35 Glass


Zener Voltage Regulator Diodes

500 mW
DO-35 GLASS

GENERAL DATA APPLICABLE TO ALL SERIES IN


THIS GROUP

500 Milliwatt
Hermetically Sealed
Glass Silicon Zener Diodes

GLASS ZENER DIODES


500 MILLIWATTS
1.8200 VOLTS

Specification Features:
Complete Voltage Range 1.8 to 200 Volts
DO-204AH Package Smaller than Conventional DO-204AA Package
Double Slug Type Construction
Metallurgically Bonded Construction
Mechanical Characteristics:
CASE 299
DO-204AH
GLASS

CASE: Double slug type, hermetically sealed glass


MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230C, 1/16 from
case for 10 seconds
FINISH: All external surfaces are corrosion resistant with readily solderable leads
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION: Any
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea
MAXIMUM RATINGS (Motorola Devices)*
Rating

Symbol

DC Power Dissipation and TL 75C


Lead Length = 3/8
Derate above TL = 75C

Value

Unit

500
4

mW
mW/C

65 to +200

PD

Operating and Storage Temperature Range

TJ, Tstg

PD , MAXIMUM POWER DISSIPATION (WATTS)

* Some part number series have lower JEDEC registered ratings.

0.7
HEAT
SINKS

0.6
0.5
0.4

3/8

3/8

0.3
0.2
0.1
0

20

40

60

80

100

120

140

160

180 200

TL, LEAD TEMPERATURE (C)

Figure 1. Steady State Power Derating

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet


6-97

APPLICATION NOTE ZENER VOLTAGE


Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order
to calculate its value. The following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = LAPD + TA.
LA is the lead-to-ambient thermal resistance (C/W) and PD is
the power dissipation. The value for LA will vary and depends
on the device mounting method. LA is generally 30 to 40C/W
for the various clips and tie points in common use and for
printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by:

JL , JUNCTION-TO-LEAD THERMAL RESISTANCE (C/W)

GENERAL DATA 500 mW DO-35 GLASS

VZ, the zener voltage temperature coefficient, is found from


Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Surge limitations are given in Figure 7. They are lower than
would be expected by considering only junction temperature,
as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation
should the limits of Figure 7 be exceeded.

300
2.460 V
200
62200 V

100
0

0.2

0.4

0.6

0.8

L, LEAD LENGTH TO HEAT SINK (INCH)

1000
7000
5000

TYPICAL LEAKAGE CURRENT


AT 80% OF NOMINAL
BREAKDOWN VOLTAGE

2000
1000
700
500
200

I R , LEAKAGE CURRENT ( A)

V = VZTJ.

400

Figure 2. Typical Thermal Resistance

TJ = TL + TJL.
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
TJL = JLPD.
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ(TJ) may be estimated. Changes in
voltage, VZ, can then be found from:

500

100
70
50
20
10
7
5
2
1
0.7
0.5

+125C

0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005

+25C

0.002
0.001

10

11

12

13

14

15

VZ, NOMINAL ZENER VOLTAGE (VOLTS)

Figure 3. Typical Leakage Current

500 mW DO-35 Glass Data Sheet


6-98

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS


TEMPERATURE COEFFICIENTS

VZ , TEMPERATURE COEFFICIENT (mV/ C)

VZ , TEMPERATURE COEFFICIENT (mV/ C)

(55C to +150C temperature range; 90% of the units are in the ranges indicated.)
+12
+10
+8
+6
+4
+2
RANGE

VZ @ IZT
(NOTE 2)

0
2
4

5
6
7
8
9
VZ, ZENER VOLTAGE (VOLTS)

10

11

12

100
70
50
30
20

3
2
1
10

200
180
160

140
VZ @ IZT
(NOTE 2)

100
120

130

140

150

160

170

180

190

20

+2
20 mA
0
0.01 mA
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS

2
4

200

100
70
50
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

200
1 V BIAS

20
10

50% OF
VZ BIAS

Figure 5. Effect of Zener Current

0 V BIAS

50

VZ, ZENER VOLTAGE (VOLTS)

TA = 25C

100

100

VZ @ IZ
TA = 25C

+4

Figure 4c. Range for Units 120 to 200 Volts

500

70

+6

VZ, ZENER VOLTAGE (VOLTS)

1000

30
50
VZ, ZENER VOLTAGE (VOLTS)

Figure 4b. Range for Units 12 to 100 Volts

VZ , TEMPERATURE COEFFICIENT (mV/ C)

VZ , TEMPERATURE COEFFICIENT (mV/ C)

Figure 4a. Range for Units to 12 Volts

120

VZ @ IZ (NOTE 2)

RANGE

10
7
5

TA = 25C
0 BIAS

30
20
1 VOLT BIAS
10
7
5

50% OF VZ BIAS

3
2

1
1

10

20

50

100

VZ, ZENER VOLTAGE (VOLTS)

Figure 6a. Typical Capacitance 2.4100 Volts

Motorola TVS/Zener Device Data

120

140

160

180

190

200

220

VZ, ZENER VOLTAGE (VOLTS)

Figure 6b. Typical Capacitance 120200 Volts

500 mW DO-35 Glass Data Sheet


6-99

Ppk , PEAK SURGE POWER (WATTS)

GENERAL DATA 500 mW DO-35 GLASS


100
70
50

RECTANGULAR
WAVEFORM
TJ = 25C PRIOR TO
INITIAL PULSE

11 V91 V NONREPETITIVE

30

5% DUTY CYCLE

1.8 V10 V NONREPETITIVE

20
10
7
5

10% DUTY CYCLE

20% DUTY CYCLE

3
2
1
0.01

0.02

0.05

0.1

0.2

0.5

10

20

50

100

200

500

1000

PW, PULSE WIDTH (ms)

1000
500

1000
700
500
300
200

RECTANGULAR
WAVEFORM, TJ = 25C

100
70
50
30
20

100200 VOLTS NONREPETITIVE

10
7
5
3
2
1
0.01

ZZ , DYNAMIC IMPEDANCE (OHMS)

Ppk , PEAK SURGE POWER (WATTS)

Figure 7a. Maximum Surge Power 1.891 Volts

200
47 V

100

27 V

50
20

6.2 V

10
5
2
1

0.1

10

100

0.1

1000

0.2

0.5

PW, PULSE WIDTH (ms)

100
70
50

5 mA

20

20 mA

1000

TJ = 25C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz

IZ = 1 mA

10

20

50

100

Figure 8. Effect of Zener Current on


Zener Impedance

MAXIMUM
MINIMUM

500
I F , FORWARD CURRENT (mA)

ZZ , DYNAMIC IMPEDANCE (OHMS)

1000
700
500

IZ, ZENER CURRENT (mA)

Figure 7b. Maximum Surge Power DO-204AH


100200 Volts

200

TJ = 25C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz

VZ = 2.7 V

10
7
5
2

200
100
50
20

75C

10
25C

5 150C

0C

1
1

10

20

30

50

70 100

VZ, ZENER VOLTAGE (VOLTS)

Figure 9. Effect of Zener Voltage on Zener Impedance

500 mW DO-35 Glass Data Sheet


6-100

0.4

0.5

0.6

0.7

0.8

0.9

1.1

VF, FORWARD VOLTAGE (VOLTS)

Figure 10. Typical Forward Characteristics

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS


20
10

I Z , ZENER CURRENT (mA)

TA = 25

0.1

0.01
1

10

11

12

13

14

15

16

29

30

VZ, ZENER VOLTAGE (VOLTS)

Figure 11. Zener Voltage versus Zener Current VZ = 1 thru 16 Volts

10

I Z , ZENER CURRENT (mA)

TA = 25

0.1

0.01
15

16

17

18

19

20

21

22

23

24

25

26

27

28

VZ, ZENER VOLTAGE (VOLTS)

Figure 12. Zener Voltage versus Zener Current VZ = 15 thru 30 Volts

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet


6-101

GENERAL DATA 500 mW DO-35 GLASS

I Z , ZENER CURRENT (mA)

10

TA = 25

0.1

0.01
30

35

40

45

50

55

60

65

70

75

80

85

90

95

100

105

250

260

VZ, ZENER VOLTAGE (VOLTS)

Figure 13. Zener Voltage versus Zener Current VZ = 30 thru 105 Volts

I Z , ZENER CURRENT (mA)

10

0.1

0.01
110

120

130

140

150

160

170

180

190

200

210

220

230

240

VZ, ZENER VOLTAGE (VOLTS)

Figure 14. Zener Voltage versus Zener Current VZ = 110 thru 220 Volts

500 mW DO-35 Glass Data Sheet


6-102

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS (TA = 25C, VF = 1.5 V Max at 200 mA for all types)

T
Type
Number
(Note 1)

Nominal
Zener Voltage
VZ @ IZT
(Note 2)
Volts

Test
Current
IZT
mA

Maximum Zener Impedance


ZZT @ IZT
(Note 3)
Ohms

Maximum
DC Zener Current
IZM
(Note 4)
mA

1N4370A
1N4371A
1N4372A
1N746A
1N747A
1N748A

2.4
2.7
3
3.3
3.6
3.9

20
20
20
20
20
20

30
30
29
28
24
23

1N749A
1N750A
1N751A
1N752A
1N753A
1N754A

4.3
4.7
5.1
5.6
6.2
6.8

20
20
20
20
20
20

1N755A
1N756A
1N757A
1N758A
1N759A

7.5
8.2
9.1
10
12

20
20
20
20
20

Type
Number
(Note 1)

Nominal
Zener Voltage
VZ
(Note 2)
Volts

Test
Current
IZT
mA

1N957B
1N958B
1N959B
1N960B
1N961B
1N962B

6.8
7.5
8.2
9.1
10
11

18.5
16.5
15
14
12.5
11.5

4.5
5.5
6.5
7.5
8.5
9.5

1N963B
1N964B
1N965B
1N966B
1N967B
1N968B

12
13
15
16
18
20

10.5
9.5
8.5
7.8
7
6.2

1N969B
1N970B
1N971B
1N972B
1N973B
1N974B

22
24
27
30
33
36

1N975B
1N976B
1N977B
1N978B
1N979B
1N980B

39
43
47
51
56
62

Maximum Reverse Leakage Current


TA = 25C
IR @ VR = 1 V
A

TA = 150C
IR @ VR = 1 V
A

150
135
120
110
100
95

100
75
50
10
10
10

200
150
100
30
30
30

22
19
17
11
7
5

85
75
70
65
60
55

2
2
1
1
0.1
0.1

30
30
20
20
20
20

6
8
10
17
30

50
45
40
35
30

0.1
0.1
0.1
0.1
0.1

20
20
20
20
20

Maximum Zener Impedance


(Note 3)
IZK
mA

Maximum
DC Zener Current
IZM
(Note 4)
mA

IR Maximum
A

Test Voltage Vdc


VR

700
700
700
700
700
700

1
0.5
0.5
0.5
0.25
0.25

47
42
38
35
32
28

150
75
50
25
10
5

5.2
5.7
6.2
6.9
7.6
8.4

11.5
13
16
17
21
25

700
700
700
700
750
750

0.25
0.25
0.25
0.25
0.25
0.25

26
24
21
19
17
15

5
5
5
5
5
5

9.1
9.9
11.4
12.2
13.7
15.2

5.6
5.2
4.6
4.2
3.8
3.4

29
33
41
49
58
70

750
750
750
1000
1000
1000

0.25
0.25
0.25
0.25
0.25
0.25

14
13
11
10
9.2
8.5

5
5
5
5
5
5

16.7
18.2
20.6
22.8
25.1
27.4

3.2
3
2.7
2.5
2.2
2

80
93
105
125
150
185

1000
1500
1500
1500
2000
2000

0.25
0.25
0.25
0.25
0.25
0.25

7.8
7
6.4
5.9
5.4
4.9

5
5
5
5
5
5

29.7
32.7
35.8
38.8
42.6
47.1

Motorola TVS/Zener Device Data

ZZT @ IZT ZZK @ IZK


Ohms
Ohms

Maximum Reverse Current

500 mW DO-35 Glass Data Sheet


6-103

GENERAL DATA 500 mW DO-35 GLASS

Type
Number
(Note 1)

Nominal
Zener Voltage
VZ
(Note 2)
Volts

Test
Current
IZT
mA

1N981B
1N982B
1N983B
1N984B
1N985B
1N986B

68
75
82
91
100
110

1.8
1.7
1.5
1.4
1.3
1.1

230
270
330
400
500
750

1N987B
1N988B
1N989B
1N990B
1N991B
1N992B

120
130
150
160
180
200

1
0.95
0.85
0.8
0.68
0.65

900
1100
1500
1700
2200
2500

IZK
mA

Maximum
DC Zener Current
IZM
(Note 4)
mA

2000
2000
3000
3000
3000
4000

0.25
0.25
0.25
0.25
0.25
0.25

4500
5000
6000
6500
7100
8000

0.25
0.25
0.25
0.25
0.25
0.25

Maximum Zener Impedance


(Note 3)
ZZT @ IZT ZZK @ IZK
Ohms
Ohms

Maximum Reverse Leakage Current


IR Maximum
A

Test Voltage Vdc


VR

4.5
4.1
3.7
3.3
3
2.7

5
5
5
5
5
5

51.7
56
62.2
69.2
76
83.6

2.5
2.3
2
1.9
1.7
1.5

5
5
5
5
5
5

91.2
98.8
114
121.6
136.8
152

NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION

NOTE 3. ZENER IMPEDANCE (ZZ) DERIVATION

Tolerance Designation
The type numbers shown have tolerance designations as follows:
1N4370A series: 5% units, C for 2%, D for 1%.
1N746A series: 5% units, C for 2%, D for 1%.
1N957B series: 5% units, C for 2%, D for 1%.

ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.

NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT

NOTE 4. MAXIMUM ZENER CURRENT RATINGS (IZM)


Values shown are based on the JEDEC rating of 400 mW. Where the actual zener voltage
(VZ) is known at the operating point, the maximum zener current may be increased and is
limited by the derating curve.

Nominal zener voltage is measured with the device junction in thermal equilibrium at the lead
temperature of 30C 1C and 3/8 lead length.

500 mW DO-35 Glass Data Sheet


6-104

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS


Low level oxide passivated zener diodes for applications requiring extremely low operating currents, low leakage, and
sharp breakdown voltage.

Zener Voltage Specified @ IZT = 50 A


Maximum Delta VZ Given from 10 to 100 A

ELECTRICAL CHARACTERISTICS (TA = 25C, VF = 1.5 V Max at IF = 100 mA for all types)
Zener Voltage
VZ @ IZT = 50 A
Volts

Maximum
Reverse Current
IR A

Test
Voltage
VR Volts

Maximum
Zener Current
IZM mA
(Note 2)

Maximum
Voltage Change
VZ Volts
(Note 4)

1
1
1
1
1

120
110
100
95
90

0.7
0.7
0.75
0.8
0.85

0.8
7.5
7.5
5
4

1
1.5
2
2
2

85
80
75
70
65

0.9
0.95
0.95
0.97
0.99

4.935
5.355
5.88
6.51
7.14

10
10
10
10
10

3
3
4
5
5.1

60
55
50
45
35

0.99
0.97
0.96
0.95
0.9

7.125
7.79
8.265
8.645
9.5

7.875
8.61
9.135
9.555
10.5

10
1
1
1
1

5.7
6.2
6.6
6.9
7.6

31.8
29
27.4
26.2
24.8

0.75
0.5
0.1
0.08
0.1

11
12
13
14
15

10.45
11.4
12.35
13.3
14.25

11.55
12.6
13.65
14.7
15.75

0.05
0.05
0.05
0.05
0.05

8.4
9.1
9.8
10.6
11.4

21.6
20.4
19
17.5
16.3

0.11
0.12
0.13
0.14
0.15

1N4703
1N4704
1N4705
1N4706
1N4707

16
17
18
19
20

15.2
16.15
17.1
18.05
19

16.8
17.85
18.9
19.95
21

0.05
0.05
0.05
0.05
0.01

12.1
12.9
13.6
14.4
15.2

15.4
14.5
13.2
12.5
11.9

0.16
0.17
0.18
0.19
0.2

1N4708
1N4709
1N4710
1N4711
1N4712

22
24
25
27
28

20.9
22.8
23.75
25.65
26.6

23.1
25.2
26.25
28.35
29.4

0.01
0.01
0.01
0.01
0.01

16.7
18.2
19
20.4
21.2

10.8
9.9
9.5
8.8
8.5

0.22
0.24
0.25
0.27
0.28

1N4713
1N4714
1N4715
1N4716
1N4717

30
33
36
39
43

28.5
31.35
34.2
37.05
40.85

31.5
34.65
37.8
40.95
45.15

0.01
0.01
0.01
0.01
0.01

22.8
25
27.3
29.6
32.6

7.9
7.2
6.6
6.1
5.5

0.3
0.33
0.36
0.39
0.43

Type
Number
(Note 1)

Nom (Note 1)

Min

Max

1N4678
1N4679
1N4680
1N4681
1N4682

1.8
2
2.2
2.4
2.7

1.71
1.9
2.09
2.28
2.565

1.89
2.1
2.31
2.52
2.835

7.5
5
4
2
1

1N4683
1N4684
1N4685
1N4686
1N4687

3
3.3
3.6
3.9
4.3

2.85
3.135
3.42
3.705
4.085

3.15
3.465
3.78
4.095
4.515

1N4688
1N4689
1N4690
1N4691
1N4692

4.7
5.1
5.6
6.2
6.8

4.465
4.845
5.32
5.89
6.46

1N4693
1N4694
1N4695
1N4696
1N4697

7.5
8.2
8.7
9.1
10

1N4698
1N4699
1N4700
1N4701
1N4702

(Note 3)

NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION (VZ)

Reverse leakage currents are guaranteed and measured at VR as shown on the table.

The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage,
C for 2%, D for 1%.

NOTE 4. MAXIMUM VOLTAGE CHANGE (VZ)

NOTE 2. MAXIMUM ZENER CURRENT RATINGS (IZM)

NOTE 5. ZENER VOLTAGE (VZ) MEASUREMENT

Maximum Zener current ratings are based on maximum Zener voltage of the individual units
and JEDEC 250 mW rating.

Nominal Zener voltage is measured with the device junction in thermal equilibrium at the lead
temperature at 30C 1C and 3/8 lead length.

Voltage change is equal to the difference between VZ at 100 A and VZ at 10 A.

NOTE 3. REVERSE LEAKAGE CURRENT (IR)

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet


6-105

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted. Based on dc measurements at thermal equilibrium; lead length
= 3/8; thermal resistance of heat sink = 30C/W) VF = 1.1 Max @ IF = 200 mA for all types.

JEDEC
Type No.
(Note 1)

Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 3)

Test
Current
IZT
mA

ZZT @ IZT
Ohms

ZZK @ IZK = 0.25 mA


Ohms

IR
A

VR
Volts

Max Zener Voltage


Temperature Coeff.
Coeff
VZ (%/C)
(Note 2)

1N5221B
1N5222B
1N5223B
1N5224B
1N5225B

2.4
2.5
2.7
2.8
3

20
20
20
20
20

30
30
30
30
29

1200
1250
1300
1400
1600

100
100
75
75
50

1
1
1
1
1

0.085
0.085
0.08
0.08
0.075

1N5226B
1N5227B
1N5228B
1N5229B
1N5230B

3.3
3.6
3.9
4.3
4.7

20
20
20
20
20

28
24
23
22
19

1600
1700
1900
2000
1900

25
15
10
5
5

1
1
1
1
2

0.07
0.065
0.06
0.055
0.03

1N5231B
1N5232B
1N5233B
1N5234B
1N5235B

5.1
5.6
6
6.2
6.8

20
20
20
20
20

17
11
7
7
5

1600
1600
1600
1000
750

5
5
5
5
3

2
3
3.5
4
5

0.03
+0.038
+0.038
+0.045
+0.05

1N5236B
1N5237B
1N5238B
1N5239B
1N5240B

7.5
8.2
8.7
9.1
10

20
20
20
20
20

6
8
8
10
17

500
500
600
600
600

3
3
3
3
3

6
6.5
6.5
7
8

+0.058
+0.062
+0.065
+0.068
+0.075

1N5241B
1N5242B
1N5243B
1N5244B
1N5245B

11
12
13
14
15

20
20
9.5
9
8.5

22
30
13
15
16

600
600
600
600
600

2
1
0.5
0.1
0.1

8.4
9.1
9.9
10
11

+0.076
+0.077
+0.079
+0.082
+0.082

1N5246B
1N5247B
1N5248B
1N5249B
1N5250B

16
17
18
19
20

7.8
7.4
7
6.6
6.2

17
19
21
23
25

600
600
600
600
600

0.1
0.1
0.1
0.1
0.1

12
13
14
14
15

+0.083
+0.084
+0.085
+0.086
+0.086

1N5251B
1N5252B
1N5253B
1N5254B
1N5255B

22
24
25
27
28

5.6
5.2
5
4.6
4.5

29
33
35
41
44

600
600
600
600
600

0.1
0.1
0.1
0.1
0.1

17
18
19
21
21

+0.087
+0.088
+0.089
+0.09
+0.091

1N5256B
1N5257B
1N5258B
1N5259B
1N5260B

30
33
36
39
43

4.2
3.8
3.4
3.2
3

49
58
70
80
93

600
700
700
800
900

0.1
0.1
0.1
0.1
0.1

23
25
27
30
33

+0.091
+0.092
+0.093
+0.094
+0.095

1N5261B
1N5262B
1N5263B
1N5264B
1N5265B

47
51
56
60
62

2.7
2.5
2.2
2.1
2

105
125
150
170
185

1000
1100
1300
1400
1400

0.1
0.1
0.1
0.1
0.1

36
39
43
46
47

+0.095
+0.096
+0.096
+0.097
+0.097

Max Zener Impedance


(Note 4)

Max Reverse
Leakage Current

(continued)

500 mW DO-35 Glass Data Sheet


6-106

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS continued (TA = 25C unless otherwise noted. Based on dc measurements at thermal equilibrium; lead length = 3/8; thermal resistance of heat sink = 30C/W) VF = 1.1 Max @ IF = 200 mA for all types.

JEDEC
Type No.
(Note 1)

Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 3)

Test
Current
IZT
mA

ZZT @ IZT
Ohms

ZZK @ IZK = 0.25 mA


Ohms

IR
A

VR
Volts

Max Zener Voltage


Temperature Coeff.
Coeff
VZ (%/C)
(Note 2)

1N5266B
1N5267B
1N5268B
1N5269B
1N5270B

68
75
82
87
91

1.8
1.7
1.5
1.4
1.4

230
270
330
370
400

1600
1700
2000
2200
2300

0.1
0.1
0.1
0.1
0.1

52
56
62
68
69

+0.097
+0.098
+0.098
+0.099
+0.099

1N5271B
1N5272B
1N5273B
1N5274B
1N5275B

100
110
120
130
140

1.3
1.1
1
0.95
0.9

500
750
900
1100
1300

2600
3000
4000
4500
4500

0.1
0.1
0.1
0.1
0.1

76
84
91
99
106

+0.11
+0.11
+0.11
+0.11
+0.11

1N5276B
1N5277B
1N5278B
1N5279B
1N5280B
1N5281B

150
160
170
180
190
200

0.85
0.8
0.74
0.68
0.66
0.65

1500
1700
1900
2200
2400
2500

5000
5500
5500
6000
6500
7000

0.1
0.1
0.1
0.1
0.1
0.1

114
122
129
137
144
152

+0.11
+0.11
+0.11
+0.11
+0.11
+0.11

Max Zener Impedance


(Note 4)

NOTE 1. TOLERANCE
The JEDEC type numbers shown indicate a tolerance of 5%. For tighter tolerance devices
use suffixes C for 2% and D for 1%.
NOTE 2. TEMPERATURE COEFFICIENT (VZ)
Test conditions for temperature coefficient are as follows:
a. IZT = 7.5 mA, T1 = 25C,
a. T2 = 125C (1N5221B through 1N5242B).
b. IZT = Rated IZT, T1 = 25C,
a. T2 = 125C (1N5243B through 1N5281B).
Device to be temperature stabilized with current applied prior to reading breakdown voltage
at the specified ambient temperature.

Motorola TVS/Zener Device Data

Max Reverse
Leakage Current

NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT


Nominal zener voltage is measured with the device junction in thermal equilibrium at the lead
temperature of 30C 1C and 3/8 lead length.
NOTE 4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.

For more information on special selections contact your nearest Motorola representative.

500 mW DO-35 Glass Data Sheet


6-107

GENERAL DATA 500 mW DO-35 GLASS

*ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted.) (VF = 1.5 Volts Max @ IF = 100 mAdc for all types.)
Motorola
Type
Number
(Note 1)

Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 4)

Test
Current
IZT
mA

VR
Volts

Max DC
Zener
Current
IZM
(Note 2)

ZZT @ IZT
Ohms

ZZK @ IZK =
Ohms 0.25 mA

IR
A

1N5985B
1N5986B
1N5987B
1N5988B
1N5989B

2.4
2.7
3
3.3
3.6

5
5
5
5
5

100
100
95
95
90

1800
1900
2000
2200
2300

100
75
50
25
15

1
1
1
1
1

208
185
167
152
139

1N5990B
1N5991B
1N5992B
1N5993B
1N5994B

3.9
4.3
4.7
5.1
5.6

5
5
5
5
5

90
88
70
50
25

2400
2500
2200
2050
1800

10
5
3
2
2

1
1
1.5
2
3

128
116
106
98
89

1N5995B
1N5996B
1N5997B
1N5998B
1N5999B

6.2
6.8
7.5
8.2
9.1

5
5
5
5
5

10
8
7
7
10

1300
750
600
600
600

1
1
0.5
0.5
0.1

4
5.2
6
6.5
7

81
74
67
61
55

1N6000B
1N6001B
1N6002B
1N6003B
1N6004B

10
11
12
13
15

5
5
5
5
5

15
18
22
25
32

600
600
600
600
600

0.1
0.1
0.1
0.1
0.1

8
8.4
9.1
9.9
11

50
45
42
38
33

1N6005B
1N6006B
1N6007B
1N6008B
1N6009B

16
18
20
22
24

5
5
5
5
5

36
42
48
55
62

600
600
600
600
600

0.1
0.1
0.1
0.1
0.1

12
14
15
17
18

31
28
25
23
21

1N6010B
1N6011B
1N6012B
1N6013B
1N6014B

27
30
33
36
39

5
5
5
5
2

70
78
88
95
130

600
600
700
700
800

0.1
0.1
0.1
0.1
0.1

21
23
25
27
30

19
17
15
14
13

1N6015B
1N6016B
1N6017B
1N6018B
1N6019B

43
47
51
56
62

2
2
2
2
2

150
170
180
200
225

900
1000
1300
1400
1400

0.1
0.1
0.1
0.1
0.1

33
36
39
43
47

12
11
9.8
8.9
8

1N6020B
1N6021B
1N6022B
1N6023B
1N6024B
1N6025B

68
75
82
91
100
110

2
2
2
2
1
1

240
265
280
300
500
650

1600
1700
2000
2300
2600
3000

0.1
0.1
0.1
0.1
0.1
0.1

52
56
62
69
76
84

7.4
6.7
6.1
5.5
5
4.5

Max Zener Impedance (Note 3)

Max Reverse Leakage Current


@

*Indicates JEDEC Registered Data


NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION
Tolerance designation Device tolerances of 5% are indicated by a B suffix, 2% by a
C suffix, 1% by a D suffix.

NOTE 3.
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz.

NOTE 2.
This data was calculated using nominal voltages. The maximum current handling capability
on a worst case basis is limited by the actual zener voltage at the operating point and the power derating curve.

500 mW DO-35 Glass Data Sheet


6-108

NOTE 4.
Nominal Zener Voltage (VZ) is measured with the device junction in thermal equilibrium at the
lead temperature of 30C 1C and 3/8 lead length.

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted.) (VF = 1.3 Volts Max, IF = 100 mAdc for all types.)
Max Reverse
Leakage Current
IR at VR
(A)

Motorola
Type
Number

Min
(Note 1)

Max
(Note 1)

Max Zener
Impedance
(Note 3)
ZZT @ IZT
(Ohms)
Max

BZX55C2V4RL
BZX55C2V7RL
BZX55C3V0RL
BZX55C3V3RL
BZX55C3V6RL

2.28
2.5
2.8
3.1
3.4

2.56
2.9
3.2
3.5
3.8

85
85
85
85
85

5
5
5
5
5

50
10
4
2
2

100
50
40
40
40

1
1
1
1
1

155
135
125
115
105

BZX55C3V9RL
BZX55C4V3RL
BZX55C4V7RL
BZX55C5V1RL
BZX55C5V6RL

3.7
4
4.4
4.8
5.2

4.1
4.6
5
5.4
6

85
75
60
35
25

5
5
5
5
5

2
1
0.5
0.1
0.1

40
20
10
2
2

1
1
1
1
1

95
90
85
80
70

BZX55C6V2RL
BZX55C6V8RL
BZX55C7V5RL
BZX55C8V2RL
BZX55C9V1RL

5.8
6.4
7
7.7
8.5

6.6
7.2
7.9
8.7
9.6

10
8
7
7
10

5
5
5
5
5

0.1
0.1
0.1
0.1
0.1

2
2
2
2
2

2
3
5
6
7

64
58
53
47
43

BZX55C10RL
BZX55C11RL
BZX55C12RL
BZX55C13RL
BZX55C15RL

9.4
10.4
11.4
12.4
13.8

10.6
11.6
12.7
14.1
15.6

15
20
20
26
30

5
5
5
5
5

0.1
0.1
0.1
0.1
0.1

2
2
2
2
2

7.5
8.5
9
10
11

40
36
32
29
27

BZX55C16RL
BZX55C18RL
BZX55C20RL
BZX55C22RL
BZX55C24RL

15.3
16.8
18.8
20.8
22.8

17.1
19.1
21.1
23.3
25.6

40
50
55
55
80

5
5
5
5
5

0.1
0.1
0.1
0.1
0.1

2
2
2
2
2

12
14
15
17
18

24
21
20
18
16

BZX55C27RL
BZX55C30RL
BZX55C33RL
BZX55C36RL
BZX55C39RL

25.1
28
31
34
37

28.9
32
35
38
41

80
80
80
80
90

5
5
5
5
2.5

0.1
0.1
0.1
0.1
0.1

2
2
2
2
5

20
22
24
27
28

14
13
12
11
10

BZX55C43RL
BZX55C47RL
BZX55C51RL
BZX55C56RL
BZX55C62RL

40
44
48
52
58

46
50
54
60
66

90
110
125
135
150

2.5
2.5
2.5
2.5
2.5

0.1
0.1
0.1
0.1
0.1

5
5
10
10
10

32
35
38
42
47

9.2
8.5
7.8
7
6.4

BZX55C68RL
BZX55C75RL
BZX55C82RL
BZX55C91RL

64
70
77
85

72
80
87
96

160
170
200
250

2.5
2.5
2.5
1

0.1
0.1
0.1
0.1

10
10
10
10

51
56
62
69

5.9
5.3
4.8
4.3

VZT at IZT
(V)

NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION


Tolerance designation The type numbers listed have zener voltage min/max limits as
shown. Device tolerance of 2% are indicated by a B instead of a C. Zener voltage is measured with the device junction in thermal equilibrium at the lead temperature of 30C 1C
and 3/8 lead length.
NOTE 2.

IZT
(mA)

Tamb
25C
Max

Tamb
125C
Max

VR
(V)

IZM
(mA)
(Note 2)

on a worst case basis is limited by the actual zener voltage at the operating point and the power derating curve.
NOTE 3.
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limtis are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz.

This data was calculated using nominal voltages. The maximum current handling capability

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet


6-109

GENERAL DATA 500 mW DO-35 GLASS

*ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted.) (VF = 1.5 Volts Max @ IF = 100 mAdc for all types.)
Impedance (Ohm)
@ IZT
f = 1000 Hz

Temp. Coefficient
(Typical)
(mV/C)

Device
D
i Type
T
(Note 2)

Min

Max

IZT =
(mA)

Max
(Note 3)

Max

@ VR =
(Volt)

Min

Max

Capacitance
(Typical)
(pF)
VR = 0,
f = 1.0 MHz

BZX79C2V4RL
BZX79C2V7RL
BZX79C3V0RL
BZX79C3V3RL
BZX79C3V6RL

2.2
2.5
2.8
3.1
3.4

2.6
2.9
3.2
3.5
3.8

5
5
5
5
5

100
100
95
95
90

100
75
50
25
15

1
1
1
1
1

3.5
3.5
3.5
3.5
3.5

0
0
0
0
0

255
230
215
200
185

BZX79C3V9RL
BZX79C4V3RL
BZX79C4V7RL
BZX79C5V1RL
BZX79C5V6RL

3.7
4
4.4
4.8
5.2

4.1
4.6
5
5.4
6

5
5
5
5
5

90
90
80
60
40

10
5
3
2
1

1
1
2
2
2

3.5
3.5
3.5
2.7
2

+0.3
+1
+0.2
+1.2
+2.5

175
160
130
110
95

BZX79C6V2RL
BZX79C6V8RL
BZX79C7V5RL
BZX79C8V2RL
BZX79C9V1RL

5.8
6.4
7
7.7
8.5

6.6
7.2
7.9
8.7
9.6

5
5
5
5
5

10
15
15
15
15

3
2
1
0.7
0.5

4
4
5
5
6

0.4
1.2
2.5
3.2
3.8

3.7
4.5
5.3
6.2
7

90
85
80
75
70

BZX79C10RL
BZX79C11RL
BZX79C12RL
BZX79C13RL
BZX79C15RL

9.4
10.4
11.4
12.4
13.8

10.6
11.6
12.7
14.1
15.6

5
5
5
5
5

20
20
25
30
30

0.2
0.1
0.1
0.1
0.05

7
8
8
8
10.5

4.5
5.4
6
7
9.2

8
9
10
11
13

70
65
65
60
55

BZX79C16RL
BZX79C18RL
BZX79C20RL
BZX79C22RL
BZX79C24RL

15.3
16.8
18.8
20.8
22.8

17.1
19.1
21.2
23.3
25.6

5
5
5
5
5

40
45
55
55
70

0.05
0.05
0.05
0.05
0.05

11.2
12.6
14
15.4
16.8

10.4
12.9
14.4
16.4
18.4

14
16
18
20
22

52
47
36
34
33

BZX79C27RL
BZX79C30RL
BZX79C33RL
BZX79C36RL
BZX79C39RL

25.1
28
31
34
37

28.9
32
35
38
41

2
2
2
2
2

80
80
80
90
130

0.05
0.05
0.05
0.05
0.05

18.9
21
23.1
25.2
27.3

23.5
26
29
31
34

30
27
25
23
21

BZX79C43RL
BZX79C47RL
BZX79C51RL
BZX79C56RL
BZX79C62RL

40
44
48
52
58

46
50
54
60
66

2
2
2
2
2

150
170
180
200
215

0.05
0.05
0.05
0.05
0.05

30.1
32.9
35.7
39.2
43.4

37
40
44
47
51

21
19
19
18
17

BZX79C68RL
BZX79C75RL
BZX79C82RL
BZX79C91RL
BZX79C100RL

64
70
77
85
94

72
79
87
96
106

2
2
2
2
1

240
255
280
300
500

0.05
0.05
0.1
0.1
0.1

47.6
52.5
62
69
76

46
51
57

56
60
95
107
119

17
16.5
29
28
27

BZX79C110RL
BZX79C120RL
BZX79C130RL
BZX79C150RL
BZX79C160RL

104
114
124
138
153

116
127
141
156
171

1
1
1
1
1

650
800
950
1250
1400

0.1
0.1
0.1
0.1
0.1

84
91
99
114
122

63
69
75
87
93

131
144
158
185
200

26
24
23
21
20

BZX79C180RL
BZX79C200RL

168
188

191
212

1
1

1700
2000

0.1
0.1

137
152

105
120

228
255

18
17

Zener Voltage

(Note 1)
(Note 4)

Leakage Current
(A)

NOTE 1. Zener voltage is measured under pulse conditions such that TJ is no more than 2C
above TA.

shown. Device tolerances of 2% are indicated by a B instead of a C, and 1% by A.

NOTE 2. TOLERANCE AND VOLTAGE DESIGNATION

NOTE 3. ZZT is measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz.

Tolerance designation The type numbers listed have zener voltage min/max limits as

500 mW DO-35 Glass Data Sheet


6-110

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS (at TA = 25C)


Motorola ZPD and BZX83C series. Forward Voltage VF = 1 Volt Max at IF = 50 mA.
Zener Voltage (Note 1)
at IZT = 5.0 mA

Impedance ()
Max (Note 2)

VR Min

Nominal

Min

Max

at IZT

BZX83

ZPD

Typ.
yp Temp.
p
C ff
Coeff.
at IZT
% per C

at IZ = 1 mA
Device Type

V
BZX83

ZPD

at IR

BZX83C2V7RL
BZX83C3V0RL
BZX83C3V3RL
BZX83C3V6RL
BZX83C3V9RL

ZPD2.7RL
ZPD3.0RL
ZPD3.3RL
ZPD3.6RL
ZPD3.9RL

2.7
3
3.3
3.6
3.9

2.5
2.8
3.1
3.4
3.7

2.9
3.2
3.5
3.8
4.1

85
90
90
90
85

600
600
600
600
600

500
500
500
500
500

0.09...0.04
0.09...0.03
0.08...0.03
0.08...0.03
0.07...0.03

1
1
1
1
1

100 mA
160 mA
130 mA
120 mA
110 mA

BZX83C4V3RL
BZX83C4V7RL
BZX83C5V1RL
BZX83C5V6RL
BZX83C6V2RL

ZPD4.3RL
ZPD4.7RL
ZPD5.1RL
ZPD5.6RL
ZPD6.2RL

4.3
4.7
5.1
5.6
6.2

4
4.4
4.8
5.2
5.8

4.6
5
5.4
6
6.6

80
78
60
40
10

600
600
550
450

500
500
480
400

1
1

200

0.06...0.01
0.05...+0.02
0.03...+0.04
0.02...+0.06
0.01...+0.07

0.8
1
2

115 mA
112 mA
100 nA
100 nA
100 nA

BZX83C6V8RL
BZX83C7V5RL
BZX83C8V2RL
BZX83C9V1RL
BZX83C10RL

ZPD6.8RL
ZPD7.5RL
ZPD8.2RL
ZPD9.1RL
ZPD10RL

6.8
7.5
8.2
9.1
10

6.4
7
7.7
8.5
9.4

7.2
7.9
8.7
9.6
10.6

8
7
7
10
15

150
50
50
50
70

+0.02...+0.07
+0.03...+0.07
+0.04...+0.07
+0.05...+0.08
+0.05...+0.08

3
5
6
7
7.5

100 nA
100 nA
100 nA
100 nA
100 nA

BZX83C11RL
BZX83C12RL
BZX83C13RL
BZX83C15RL
BZX83C16RL

ZPD11RL
ZPD12RL
ZPD13RL
ZPD15RL
ZPD16RL

11
12
13
15
16

10.4
11.4
12.4
13.8
15.3

11.6
12.7
14.1
15.6
17.1

20
20
25
30
40

70
90
110
110
170

+0.05...+0.09
+0.06...+0.09
+0.07...+0.09
+0.07...+0.09
+0.08...+0.095

8.5
9
10
11
12

100 nA
100 nA
100 nA
100 nA
100 nA

BZX83C18RL
BZX83C20RL
BZX83C22RL
BZX83C24RL
BZX83C27RL
BZX83C30RL
BZX83C33RL

ZPD18RL
ZPD20RL
ZPD22RL
ZPD24RL
ZPD27RL
ZPD30RL
ZPD33RL

18
20
22
24
27
30
33

16.8
18.8
20.8
22.8
25.1
28
31

19.1
21.2
23.3
25.6
28.9
32
35

50
55
55
80
80
80
80

170
220
220
220
250
250
250

+0.08...+0.10
+0.08...+0.10
+0.08...+0.10
+0.08...+0.10
+0.08...+0.10
+0.08...+0.10
+0.08...+0.10

14
15
17
18
20
22
24

100 nA
100 nA
100 nA
100 nA
100 nA
100 nA
100 nA

NOTE 1. Pulse test.


NOTE 2. f = 1.0 kHz, IZ(ac) = 0.1 IZ(dc).

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet


6-111

GENERAL DATA 500 mW DO-35 GLASS


Designed for 250 mW applications requiring low leakage,
low impedance. Same as 1N4099 through 1N4104 and
1N4614 through 1N4627 except low noise test omitted.

Voltage Range from 1.8 to 10 Volts


Zener Impedance and Zener Voltage Specified for LowLevel Operation at IZT = 250 A

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified. IZT = 250 A and VF = 1 V Max @ IF = 200 mA for all
ELECTRICAL CHARACTERISTICS types)

Type
Number
(Note 1)

Nominal
Zener Voltage
VZ
(Note 2)
(Volts)

Max Zener
Impedance
ZZT
(Note 3)
(Ohms)

Max
Reverse
Current
IR
(A)

MZ4614
MZ4615
MZ4616
MZ4617
MZ4618

1.8
2
2.2
2.4
2.7

1200
1250
1300
1400
1500

MZ4619
MZ4620
MZ4621
MZ4622
MZ4623

3
3.3
3.6
3.9
4.3

MZ4624
MZ4625
MZ4626
MZ4627
MZ4099
MZ4100
MZ4101
MZ4102
MZ4103
MZ4104

Test
Voltage
VR
(Volts)

Max Zener Current


IZM
(Note 4)
(mA)

7.5
5
4
2
1

1
1
1
1
1

120
110
100
95
90

1600
1650
1700
1650
1600

0.8
7.5
7.5
5
4

1
1.5
2
2
2

85
80
75
70
65

4.7
5.1
5.6
6.2
6.8

1550
1500
1400
1200
200

10
10
10
10
10

3
3
4
5
5.2

60
55
50
45
35

7.5
8.2
8.7
9.1
10

200
200
200
200
200

10
1
1
1
1

5.7
6.3
6.7
7
7.6

31.8
29
27.4
26.2
24.8

NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION


The type numbers shown have a standard tolerance of 5% on the nominal zener voltage.
NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal Zener Voltage is measured with the device junction in the thermal equilibrium with
ambient temperature of 25C.
NOTE 3. ZENER IMPEDANCE (ZZT) DERIVATION
The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT) is superimposed on IZT.

500 mW DO-35 Glass Data Sheet


6-112

@
(Note 5)

NOTE 4. MAXIMUM ZENER CURRENT RATINGS (IZM)


Maximum zener current ratings are based on maximum zener voltage of the individual units.
NOTE 5. REVERSE LEAKAGE CURRENT IR
Reverse leakage currents are guaranteed and are measured at VR as shown on the table.
NOTE 6. SPECIAL SELECTORS AVAILABLE INCLUDE:
A) Tighter voltage tolerances. Contact your nearest Motorola representative for more information.

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

Low Voltage Avalanche Passivated


Silicon Oxide Zener Regulator Diodes
Same as 1N5520B through 1N5530B except low noise test
spec omitted.
Low Maximum Regulation Factor
Low Zener Impedance
Low Leakage Current
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified. Based on dc measurements at thermal equilibrium;
ELECTRICAL CHARACTERISTICS VF = 1.1 Max @ IF = 200 mA for all types.)

M
l
Motorola
Type No.
(Note 1)

Nominal
Zener
Voltage
VZ @ IZT
Volts
(Note 2)

MZ5520B
MZ5521B
MZ5522B
MZ5523B
MZ5524B
MZ5525B
MZ5526B
MZ5527B
MZ5528B
MZ5529B
MZ5530B

VR Volts

Maximum
DC Zener
Current
IZM
mAdc
(Note 5)

Regulation
Factor
VZ
Volts
(Note 6)

Low
VZ
Current
IZL
mAdc

1
3
2
2
2

1
1.5
2
2.5
3.5

98
88
81
75
68

0.85
0.75
0.6
0.65
0.3

2.0
2.0
1.0
0.25
0.25

1
1
0.5
0.5
0.1
0.05

5
6.2
6.8
7.5
8.2
9.1

61
56
51
46
42
38

0.2
0.1
0.05
0.05
0.05
0.1

0.01
0.01
0.01
0.01
0.01
0.01

Max Reverse Leakage Current


Test
T
Current
IZT
mAdc

Max Zener
Impedance
ZZT @ IZT
Ohms
(Note 3)

IR
Adc
(Note 4)

3.9
4.3
4.7
5.1
5.6

20
20
10
5
3

22
18
22
26
30

6.2
6.8
7.5
8.2
9.1
10

1
1
1
1
1
1

30
30
35
40
45
60

NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION

NOTE 5. MAXIMUM REGULATOR CURRENT (IZM)

The B suffix type numbers listed are 5% tolerance of nominal VZ.

The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
it applies only to the B suffix device. The actual IZM for any device may not exceed the value
of 400 milliwatts divided by the actual VZ of the device.

NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT


Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25C.
NOTE 3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current
having an rms value equal to 10% of the dc zener current (IZT) is superimposed on IZT.
NOTE 4. REVERSE LEAKAGE CURRENT IR
Reverse leakage currents are guaranteed and are measured at VR as shown on the table.

Motorola TVS/Zener Device Data

NOTE 6. MAXIMUM REGULATION FACTOR (VZ)


VZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device
junction in thermal equilibrium.
NOTE 7. SPECIAL SELECTORS AVAILABLE INCLUDE:
A) Tighter voltage tolerances. Contact your nearest Motorola representative for more information.

500 mW DO-35 Glass Data Sheet


6-113

GENERAL DATA 500 mW DO-35 GLASS

Zener Voltage Regulator Diodes Axial Leaded


500 mW DO-35 Glass

NOTES:
1. PACKAGE CONTOUR OPTIONAL WITHIN A AND B
HEAT SLUGS, IF ANY, SHALL BE INCLUDED
WITHIN THIS CYLINDER, BUT NOT SUBJECT TO
THE MINIMUM LIMIT OF B.
2. LEAD DIAMETER NOT CONTROLLED IN ZONE F
TO ALLOW FOR FLASH, LEAD FINISH BUILDUP
AND MINOR IRREGULARITIES OTHER THAN
HEAT SLUGS.
3. POLARITY DENOTED BY CATHODE BAND.
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

B
D
F

DIM
A
B
D
F
K

MILLIMETERS
MIN
MAX
3.05
5.08
1.52
2.29
0.46
0.56

1.27
25.40
38.10

INCHES
MIN
MAX
0.120 0.200
0.060 0.090
0.018 0.022

0.050
1.000 1.500

All JEDEC dimensions and notes apply.

CASE 299-02
DO-204AH
GLASS
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)

MULTIPLE PACKAGE QUANTITY (MPQ)


REQUIREMENTS
Package Option

Type No. Suffix

MPQ (Units)

Tape and Reel

RL, RL2(1)

5K

Tape and Ammo

TA, TA2(1)

5K

NOTES: 1. The 2 suffix refers to 26 mm tape spacing.


NOTES: 2. Radial Tape and Reel may be available. Please contact your Motorola
NOTES: 2. representative.

Refer to Section 10 for more information on Packaging Specifications.

500 mW DO-35 Glass Data Sheet


6-114

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

GENERAL
DATA

11.3 Watt DO-41 Glass


Zener Voltage Regulator Diodes

11.3 WATT
DO-41 GLASS

GENERAL DATA APPLICABLE TO ALL SERIES IN


THIS GROUP

One Watt Hermetically Sealed Glass


Silicon Zener Diodes

1 WATT
ZENER REGULATOR
DIODES
3.3100 VOLTS

Specification Features:
Complete Voltage Range 3.3 to 100 Volts
DO-41 Package
Double Slug Type Construction
Metallurgically Bonded Construction
Oxide Passivated Die
Mechanical Characteristics:
CASE: Double slug type, hermetically sealed glass
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230C, 1/16 from
case for 10 seconds
FINISH: All external surfaces are corrosion resistant with readily solderable leads
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION: Any
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea

CASE 59-03
DO-41
GLASS

MAXIMUM RATINGS
Rating
DC Power Dissipation @ TA = 50C
Derate above 50C
Operating and Storage Junction Temperature Range

Symbol

Value

Unit

PD

1
6.67

Watt
mW/C

TJ, Tstg

65 to +200

PD, MAXIMUM DISSIPATION (WATTS)

1.25
L = 1
L = 1/8

L = LEAD LENGTH
TO HEAT SINK

L = 3/8
0.75

0.5

0.25

20

40

60
80 100 120 140 160
TL, LEAD TEMPERATURE (C)

180

200

Figure 1. Power Temperature Derating Curve

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet


6-115

GENERAL DATA 500 mW DO-35 GLASS


b. Range for Units to 12 to 100 Volts
VZ , TEMPERATURE COEFFICIENT (mV/C)

VZ , TEMPERATURE COEFFICIENT (mV/C)

a. Range for Units to 12 Volts


+12
+10
+8
+6
+4
+2
VZ @ IZT

RANGE
0
2
4
2

5
6
7
8
9
VZ, ZENER VOLTAGE (VOLTS)

10

11

12

100
70
50
30
20
RANGE

10
7
5

VZ @ IZT

3
2
1
10

20
30
50
VZ, ZENER VOLTAGE (VOLTS)

70

100

Ppk , PEAK SURGE POWER (WATTS)

175

VZ , TEMPERATURE COEFFICIENT (mV/C)

JL , JUNCTION-TO-LEAD THERMAL RESISTANCE (mV/C/W)

Figure 2. Temperature Coefficients


(55C to +150C temperature range; 90% of the units are in the ranges indicated.)

150
125
100
75
50
25
0
0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.9

VZ @ IZ
TA = 25C

+4
+2

20 mA

0
0.01 mA
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS

2
4

L, LEAD LENGTH TO HEAT SINK (INCHES)

VZ, ZENER VOLTAGE (VOLTS)

Figure 3. Typical Thermal Resistance


versus Lead Length

Figure 4. Effect of Zener Current

100
70
50
30

0.8

+6

RECTANGULAR
WAVEFORM
TJ = 25C PRIOR TO
INITIAL PULSE

11 V100 V NONREPETITIVE
5% DUTY CYCLE

3.3 V10 V NONREPETITIVE

20
10
7
5

10% DUTY CYCLE


20% DUTY CYCLE

3
2
1
0.01

0.02

0.05

0.1

0.2

0.5

This graph represents 90 percentile data points.


For worst case design characteristics, multiply surge power by 2/3.

1
2
5
PW, PULSE WIDTH (ms)

10

20

50

100

200

500

1000

Figure 5. Maximum Surge Power

500 mW DO-35 Glass Data Sheet


6-116

Motorola TVS/Zener Device Data

1000
500

1000
700
500

TJ = 25C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz

VZ = 2.7 V

Z Z , DYNAMIC IMPEDANCE (OHMS)

Z Z , DYNAMIC IMPEDANCE (OHMS)

GENERAL DATA 500 mW DO-35 GLASS

200
47 V

100

27 V

50
20
10

6.2 V

5
2

IZ = 1 mA

200
100
70
50

5 mA

20

20 mA

10
7
5
2

1
0.1

0.2

0.5

1
2
5
10
IZ, ZENER CURRENT (mA)

20

50

100

Figure 6. Effect of Zener Current


on Zener Impedance

5
7 10
20 30
VZ, ZENER CURRENT (mA)

50

70 100

Figure 7. Effect of Zener Voltage


on Zener Impedance

10000
7000
5000

400
300
200

TYPICAL LEAKAGE CURRENT


AT 80% OF NOMINAL
BREAKDOWN VOLTAGE

1000
700
500

0 V BIAS
100

C, CAPACITANCE (pF)

2000

200
100
70
50
I R , LEAKAGE CURRENT ( A)

TJ = 25C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz

1 V BIAS
50

20
10
8

50% OF BREAKDOWN BIAS

20
4

10
7
5

5
10
20
VZ, NOMINAL VZ (VOLTS)

50

100

Figure 9. Typical Capacitance versus VZ


2
1
0.7
0.5

1000
500

+125C

I F , FORWARD CURRENT (mA)

0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005

+25C

0.002

MINIMUM
MAXIMUM

200
100
50
20

75C

10
25C

5 150C

0C

0.001

1
3

10

11

12

13

14

15

0.4

0.5

0.6

0.7

0.8

0.9

VZ, NOMINAL ZENER VOLTAGE (VOLTS)

VF, FORWARD VOLTAGE (VOLTS)

Figure 8. Typical Leakage Current

Figure 10. Typical Forward Characteristics

Motorola TVS/Zener Device Data

1.1

500 mW DO-35 Glass Data Sheet


6-117

GENERAL DATA 500 mW DO-35 GLASS


APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order
to calculate its value. The following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = LAPD + TA.
LA is the lead-to-ambient thermal resistance (C/W) and PD is
the power dissipation. The value for LA will vary and depends
on the device mounting method. LA is generally 30 to 40C/W
for the various clips and tie points in common use and for
printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by:
TJ = TL + TJL.
TJL is the increase in junction temperature above the lead

500 mW DO-35 Glass Data Sheet


6-118

temperature and may be found as follows:


TJL = JLPD.
JL may be determined from Figure 3 for dc power conditions. For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
V = VZ TJ.
VZ, the zener voltage temperature coefficient, is found from
Figure 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Surge limitations are given in Figure 5. They are lower than
would be expected by considering only junction temperature,
as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation
should the limits of Figure 5 be exceeded.

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

*ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 1.2 V Max, IF = 200 mA for all types.

JEDEC
Type No.
(Note 1)

Nominal
Zener Voltage
VZ @ IZT
Volts
(Notes 2 and 3)

Test
Current
IZT
mA

ZZT @ IZT
Ohms

ZZK @ IZK
Ohms

IZK
mA

IR
A Max

VR
Volts

Surge Current @
TA = 25C
ir mA
(Note 5)

1N4728A
1N4729A
1N4730A
1N4731A
1N4732A

3.3
3.6
3.9
4.3
4.7

76
69
64
58
53

10
10
9
9
8

400
400
400
400
500

1
1
1
1
1

100
100
50
10
10

1
1
1
1
1

1380
1260
1190
1070
970

1N4733A
1N4734A
1N4735A
1N4736A
1N4737A

5.1
5.6
6.2
6.8
7.5

49
45
41
37
34

7
5
2
3.5
4

550
600
700
700
700

1
1
1
1
0.5

10
10
10
10
10

1
2
3
4
5

890
810
730
660
605

1N4738A
1N4739A
1N4740A
1N4741A
1N4742A

8.2
9.1
10
11
12

31
28
25
23
21

4.5
5
7
8
9

700
700
700
700
700

0.5
0.5
0.25
0.25
0.25

10
10
10
5
5

6
7
7.6
8.4
9.1

550
500
454
414
380

1N4743A
1N4744A
1N4745A
1N4746A
1N4747A

13
15
16
18
20

19
17
15.5
14
12.5

10
14
16
20
22

700
700
700
750
750

0.25
0.25
0.25
0.25
0.25

5
5
5
5
5

9.9
11.4
12.2
13.7
15.2

344
304
285
250
225

1N4748A
1N4749A
1N4750A
1N4751A
1N4752A

22
24
27
30
33

11.5
10.5
9.5
8.5
7.5

23
25
35
40
45

750
750
750
1000
1000

0.25
0.25
0.25
0.25
0.25

5
5
5
5
5

16.7
18.2
20.6
22.8
25.1

205
190
170
150
135

1N4753A
1N4754A
1N4755A
1N4756A
1N4757A

36
39
43
47
51

7
6.5
6
5.5
5

50
60
70
80
95

1000
1000
1500
1500
1500

0.25
0.25
0.25
0.25
0.25

5
5
5
5
5

27.4
29.7
32.7
35.8
38.8

125
115
110
95
90

1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4763A
1N4764A

56
62
68
75
82
91
100

4.5
4
3.7
3.3
3
2.8
2.5

110
125
150
175
200
250
350

2000
2000
2000
2000
3000
3000
3000

0.25
0.25
0.25
0.25
0.25
0.25
0.25

5
5
5
5
5
5
5

42.6
47.1
51.7
56
62.2
69.2
76

80
70
65
60
55
50
45

Maximum Zener Impedance (Note 4)

Leakage Current

*Indicates JEDEC Registered Data.


NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION

NOTE 4. ZENER IMPEDANCE (ZZ) DERIVATION

The JEDEC type numbers listed have a standard tolerance on the nominal zener voltage of
5%. C for 2%, D for 1%.

The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed
on IZT or IZK.

NOTE 2. SPECIALS AVAILABLE INCLUDE:


Nominal zener voltages between the voltages shown and tighter voltage tolerances.
For detailed information on price, availability, and delivery, contact your nearest Motorola representative.
NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT
Motorola guarantees the zener voltage when measured at 90 seconds while maintaining the
lead temperature (TL) at 30C 1C, 3/8 from the diode body.

Motorola TVS/Zener Device Data

NOTE 5. SURGE CURRENT (ir) NON-REPETITIVE


The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device
capability is as described in Figure 5 of the General Data DO-41 Glass.

500 mW DO-35 Glass Data Sheet


6-119

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) (VF = 1.2 V Max, IF = 200 mA for all types.)
Zener Voltage
VZT (V)
(Notes 2 and 3)

Zener Impedance
ZZ (ohms)
(Note 4)

Leakage
Current
(A)

(mA)

VR (V)

IR
Max

Surge
Current
TA = 25
25C
C
ir (mA)
(Note 5)

400
500
500
500
600

1
1
1
1
1

1
1
1
1
1.5

60
30
5
3
3

1380
1260
1190
1070
970

10
7
4
3.5
3

500
400
300
300
200

1
1
1
1
0.5

2
2
3
4
4.5

1
1
1
1
1

890
810
730
660
605

25
25
25
20
20

5
5
7
8
9

200
200
200
300
350

0.5
0.5
0.5
0.5
0.5

5
6.5
7
7.7
8.4

1
1
0.5
0.5
0.5

550
500
454
414
380

14.1
15.6
17.1
19.1
21.2

20
15
15
15
10

10
15
15
20
24

400
500
500
500
600

0.5
0.5
0.5
0.5
0.5

9.1
10.5
11
12.5
14

0.5
0.5
0.5
0.5
0.5

344
304
285
250
225

20.8
22.8
25.1
28
31

23.3
25.6
28.9
32
35

10
10
8
8
8

25
25
30
30
35

600
600
750
1000
1000

0.5
0.5
0.25
0.25
0.25

15.5
17
19
21
23

0.5
0.5
0.5
0.5
0.5

205
190
170
150
135

BZX85C36RL
BZX85C39RL
BZX85C43RL
BZX85C47RL
BZX85C51RL

34
37
40
44
48

38
41
46
50
54

8
6
6
4
4

40
45
50
90
115

1000
1000
1000
1500
1500

0.25
0.25
0.25
0.25
0.25

25
27
30
33
36

0.5
0.5
0.5
0.5
0.5

125
115
110
95
90

BZX85C56RL
BZX85C62RL
BZX85C68RL
BZX85C75RL
BZX85C82RL

52
58
64
70
77

60
66
72
80
87

4
4
4
4
2.7

120
125
130
150
200

2000
2000
2000
2000
3000

0.25
0.25
0.25
0.25
0.25

39
43
47
51
56

0.5
0.5
0.5
0.5
0.5

80
70
65
60
55

BZX85C91RL
BZX85C100RL

85
96

96
106

2.7
2.7

250
350

3000
3000

0.25
0.25

62
68

0.5
0.5

50
45

T
Type
(Note 1)

VZ
Min

VZ
Max

Test
C
Current
t
IZT
(mA)

BZX85C3V3RL
BZX85C3V6RL
BZX85C3V9RL
BZX85C4V3RL
BZX85C4V7RL

3.1
3.4
3.7
4
4.4

3.5
3.8
4.1
4.6
5

80
60
60
50
45

20
15
15
13
13

BZX85C5V1RL
BZX85C5V6RL
BZX85C6V2RL
BZX85C6V8RL
BZX85C7V5RL

4.8
5.2
5.8
6.4
7

5.4
6
6.6
7.2
7.9

45
45
35
35
35

BZX85C8V2RL
BZX85C9V1RL
BZX85C10RL
BZX85C11RL
BZX85C12RL

7.7
8.5
9.4
10.4
11.4

8.7
9.6
10.6
11.6
12.7

BZX85C13RL
BZX85C15RL
BZX85C16RL
BZX85C18RL
BZX85C20RL

12.4
13.8
15.3
16.8
18.8

BZX85C22RL
BZX85C24RL
BZX85C27RL
BZX85C30RL
BZX85C33RL

Max
at IZT

NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION


The type numbers listed have zener voltage min/max limits as shown. Device tolerance of
2% are indicated by a B instead of C.
NOTE 2. SPECIALS AVAILABLE INCLUDE:

Max at IZ

NOTE 4. ZENER IMPEDANCE (ZZ) DERIVATION


The zener impedance is derived from the 1 kHz cycle ac voltage, which results when an ac
current having an rms value equal to 10% of the dc zener current (IZT) or (IZK) is superimposed on IZT or IZK.

Nominal zener voltages between the voltages shown and tighter voltage tolerances.
For detailed information on price, availability, and delivery, contact your nearest Motorola representative.

NOTE 5. SURGE CURRENT (ir) NON-REPETITIVE

NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT


VZ is measured after the test current has been applied to 40 10 msec., while maintaining
the lead temperature (TL) at 30C 1C, 3/8 from the diode body.

The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current IZT. However, actual device capability is as described
in Figure 5 of General Data DO-41 glass.

500 mW DO-35 Glass Data Sheet


6-120

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 1.2 V Max, IF = 200 mA for all types.

VZ Max

Test Current
IZT
(mA)

Typ

Max

IR = 1 A

Surge
Current
TA = 25C
ir (ma)
(Note 5)

3.7
4
4.4
4.8
5.2

4.1
4.6
5
5.4
6

100
100
100
100
100

4
4
4
2
1

7
7
7
5
2

0.7
1.5

1190
1070
970
890
810

MZPY6.2RL
MZPY6.8RL
MZPY7.5RL
MZPY8.2RL
MZPY9.1RL

5.8
6.4
7
7.7
8.5

6.6
7.2
7.9
8.7
9.6

100
100
100
100
50

1
1
1
1
2

2
2
2
2
4

2
3
5
6
7

730
660
605
550
500

MZPY10RL
MZPY11RL
MZPY12RL
MZPY13RL
MZPY15RL

9.4
10.4
11.4
12.4
14.2

10.6
11.6
12.7
14.1
15.8

50
50
50
50
50

2
3
3
4
4

4
7
7
9
9

7.5
8.5
9
10
11

454
414
380
344
304

MZPY16RL
MZPY18RL
MZPY20RL
MZPY22RL
MZPY24RL

15.3
16.8
18.8
20.8
22.8

17.1
19.1
21.2
23.3
25.6

25
25
25
25
25

5
5
6
7
8

10
11
12
13
14

12
14
15
17
18

285
250
225
205
190

MZPY27RL
MZPY30RL
MZPY33RL
MZPY36RL
MZPY39RL

25.1
28
31
34
37

28.9
32
35
38
41

25
25
25
10
10

9
10
11
25
30

15
20
20
60
60

20
22.5
25
27
29

170
150
135
125
115

MZPY43RL
MZPY47RL
MZPY51RL
MZPY56RL
MZPY62RL

40
44
48
52
58

46
50
54
60
66

10
10
10
10
10

35
40
45
50
60

80
80
100
100
130

32
35
38
42
47

110
95
90
80
70

MZPY68RL
MZPY75RL
MZPY82RL
MZPY91RL
MZPY100RL

64
70
77
85
94

72
79
88
96
106

10
10
10
5
5

65
70
80
120
130

130
160
160
250
250

51
56
61
68
75

65
60
55
50
45

Zener Voltage (V)


(Notes 2 and 3)
Type No.
No
(Note 1)

VZ Min

MZPY3.9RL
MZPY4.3RL
MZPY4.7RL
MZPY5.1RL
MZPY5.6RL

NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION


The type numbers listed have zener voltage min/max limits as shown. Device tolerance of
2% are indicated by a C and 1% by a D suffix.
NOTE 2. SPECIALS AVAILABLE INCLUDE:

Zener Impedance
(Note 4)
f = 1 kHz (ohms)

Blocking
Volt Min (V)

NOTE 4. ZENER IMPEDANCE (ZZ) DERIVATION


The zener impedance is derived from the 1 kHz cycle ac voltage, which results when an ac
current having an rms value equal to 10% of the dc zener current (IZT) of (IZK) is superimposed on IZT or IZK.

Nominal zener voltages between the voltages shown and tighter voltage tolerances.
For detailed information on price, availability, and delivery, contact your nearest Motorola representative.

NOTE 5. SURGE CURRENT (ir) NON-REPETITIVE

NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT


VZ is measured after the test current has been applied to 40 10 msec., while maintaining
the lead temperature (TL) at 30C 1C, 3/8 from the diode body.

The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current IZT, however, actual device capability is as described
in Figure 5 of General Data DO-41 glass.

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet


6-121

GENERAL DATA 500 mW DO-35 GLASS

Zener Voltage Regulator Diodes Axial Leaded


11.3 Watt DO-41 Glass

B
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.

K
F

DIM
A
B
D
F
K

A
F
K

MILLIMETERS
MIN
MAX
4.07
5.20
2.04
2.71
0.71
0.86

1.27
27.94

INCHES
MIN
MAX
0.160 0.205
0.080 0.107
0.028 0.034

0.050
1.100

CASE 59-03
DO-41
GLASS
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)

MULTIPLE PACKAGE QUANTITY (MPQ)


REQUIREMENTS
Package Option

Type No. Suffix

MPQ (Units)

Tape and Reel

RL, RL2

6K

Tape and Ammo

TA, TA2

4K

NOTE: 1. The 2 suffix refers to 26 mm tape spacing.

(Refer to Section 10 for more information on Packaging Specifications.)

500 mW DO-35 Glass Data Sheet


6-122

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

GENERAL
DATA

1 to 3 Watt DO-41 Surmetic 30


Zener Voltage Regulator Diodes

13 WATT
DO-41
SURMETIC 30

GENERAL DATA APPLICABLE TO ALL SERIES IN


THIS GROUP

1 to 3 Watt Surmetic 30
Silicon Zener Diodes

1 TO 3 WATT
ZENER REGULATOR
DIODES
3.3400 VOLTS

. . . a complete series of 1 to 3 Watt Zener Diodes with limits and operating characteristics
that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an
axial-lead, transfer-molded plastic package offering protection in all common environmental conditions.
Specification Features:
Surge Rating of 98 Watts @ 1 ms
Maximum Limits Guaranteed On Up To Six Electrical Parameters
Package No Larger Than the Conventional 1 Watt Package
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION: Any
WEIGHT: 0.4 gram (approx)
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea

CASE 59-03
DO-41
PLASTIC

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

DC Power Dissipation @ TL = 75C


Lead Length = 3/8
Derate above 75C

PD

Watts

24

mW/C

DC Power Dissipation @ TA = 50C


Derate above 50C

PD

1
6.67

Watt
mW/C

TJ, Tstg

65 to +200

Operating and Storage Junction Temperature Range

PD, MAXIMUM DISSIPATION (WATTS)

5
L = 1/8

L = LEAD LENGTH
TO HEAT SINK

4
L = 3/8
3

L = 1

20

40

60
80 100 120 140 160
TL, LEAD TEMPERATURE (C)

180

200

Figure 1. Power Temperature Derating Curve

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet


6-123

JL (t, D) TRANSIENT THERMAL RESISTANCE


JUNCTION-TO-LEAD (C/W)

GENERAL DATA 500 mW DO-35 GLASS

30
20
10
7
5
3
2
1
0.7
0.5

D =0.5
0.2
0.1
t2
DUTY CYCLE, D =t1/t2

0.02
0.01

NOTE: BELOW 0.1 SECOND, THERMAL


RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).

D=0

0.3
0.0001 0.0002

t1

PPK

0.05

0.0005

0.001

0.002

0.005

0.01

0.02
0.05
t, TIME (SECONDS)

0.1

0.2

SINGLE PULSE TJL = JL (t)PPK


REPETITIVE PULSES TJL = JL (t,D)PPK
0.5

10

Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch

IR , REVERSE LEAKAGE ( Adc) @ VR


AS SPECIFIED IN ELEC. CHAR. TABLE

PPK , PEAK SURGE POWER (WATTS)

1K
RECTANGULAR
NONREPETITIVE
WAVEFORM
TJ = 25C PRIOR
TO INITIAL PULSE

500
300
200
100
50
30
20
10
0.1

0.2 0.3 0.5

1
2 3
5
10
PW, PULSE WIDTH (ms)

20 30 50

100

Figure 3. Maximum Surge Power

3
2
1
0.5

TA = 125C

0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0005
0.0003

TA = 125C

10
20
50 100
NOMINAL VZ (VOLTS)

200

400

1000

Figure 4. Typical Reverse Leakage

APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order
to calculate its value. The following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = LA PD + TA
LA is the lead-to-ambient thermal resistance (C/W) and
PD is the power dissipation. The value for LA will vary and
depends on the device mounting method. LA is generally
3040C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by:
TJ = TL + TJL
500 mW DO-35 Glass Data Sheet
6-124

TJL is the increase in junction temperature above the lead


temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
TJL = JL PD
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ (TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
V = VZ TJ
VZ, the zener voltage temperature coefficient, is found from
Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Data of Figure 2 should not be used to compute surge capability. Surge limitations are given in Figure 3. They are lower
than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation
should the limits of Figure 3 be exceeded.
Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS


TEMPERATURE COEFFICIENT RANGES
10
8
6
4
RANGE

2
0
2
4
3

6
7
8
9
10
VZ, ZENER VOLTAGE @ IZT (VOLTS)

11

12

VZ, TEMPERATURE COEFFICIENT (mV/ C) @ I ZT

VZ, TEMPERATURE COEFFICIENT (mV/ C) @ I ZT

(90% of the Units are in the Ranges Indicated)


1000
500

200
100
50

20
10
10

20

50
100
200
400
VZ, ZENER VOLTAGE @ IZT (VOLTS)

Figure 5. Units To 12 Volts

1000

Figure 6. Units 10 To 400 Volts

ZENER VOLTAGE versus ZENER CURRENT


100

50
30
20

50
30
20

IZ , ZENER CURRENT (mA)

IZ, ZENER CURRENT (mA)

(Figures 7, 8 and 9)
100

10
5
3
2
1
0.5
0.3
0.2
0.1

3
4
5
6
7
VZ, ZENER VOLTAGE (VOLTS)

10

10
5
3
2
1
0.5
0.3
0.2
0.1
0

10

10

IZ , ZENER CURRENT (mA)

2
1
0.5

0.2
0.1
100

150

200
250
300
350
VZ, ZENER VOLTAGE (VOLTS)

Figure 9. VZ = 100 thru 400 Volts

Motorola TVS/Zener Device Data

30
40
50
60
70
80
VZ, ZENER VOLTAGE (VOLTS)

90

100

Figure 8. VZ = 12 thru 82 Volts

400

JL, JUNCTION-TO-LEAD THERMAL RESISTANCE ( C/W)

Figure 7. VZ = 3.3 thru 10 Volts

20

80
70
60
50
L

40

30
TL

20

PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD

10
0

1/8

1/4
3/8
1/2
5/8
3/4
L, LEAD LENGTH TO HEAT SINK (INCH)

7/8

Figure 10. Typical Thermal Resistance

500 mW DO-35 Glass Data Sheet


6-125

GENERAL DATA 500 mW DO-35 GLASS

*MAXIMUM RATINGS
Rating

Symbol

Value

Unit

DC Power Dissipation @ TL = 75C, Lead Length = 3/8


Derate above 75C

PD

1.5
12

Watts
mW/C

*ELECTRICAL CHARACTERISTICS (TL = 30C unless otherwise noted. VF = 1.5 Volts Max @ lF = 200 mAdc for all types.)
Motorola
Type
Number
(Note 1)

Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 2 and 3)

Test
Current
IZT
mA

ZZT @ IZT
Ohms

ZZK
Ohms

1N5913B
1N5914B
1N5915B
1N5916B
1N5917B

3.3
3.6
3.9
4.3
4.7

113.6
104.2
96.1
87.2
79.8

10
9
7.5
6
5

1N5918B
1N5919B
1N5920B
1N5921B
1N5922B

5.1
5.6
6.2
6.8
7.5

73.5
66.9
60.5
55.1
50

1N5923B
1N5924B
1N5925B
1N5926B
1N5927B

8.2
9.1
10
11
12

1N5928B
1N5929B
1N5930B
1N5931B
1N5932B

Max. Zener Impedance (Note 4)

Max. Reverse
Leakage Current

IZK
mA

IR
A

500
500
500
500
500

1
1
1
1
1

100
75
25
5
5

1
1
1
1
1.5

454
416
384
348
319

4
2
2
2.5
3

350
250
200
200
400

1
1
1
1
0.5

5
5
5
5
5

2
3
4
5.2
6

294
267
241
220
200

45.7
41.2
37.5
34.1
31.2

3.5
4
4.5
5.5
6.5

400
500
500
550
550

0.5
0.5
0.25
0.25
0.25

5
5
5
1
1

6.5
7
8
8.4
9.1

182
164
150
136
125

13
15
16
18
20

28.8
25
23.4
20.8
18.7

7
9
10
12
14

550
600
600
650
650

0.25
0.25
0.25
0.25
0.25

1
1
1
1
1

9.9
11.4
12.2
13.7
15.2

115
100
93
83
75

1N5933B
1N5934B
1N5935B
1N5936B
1N5937B

22
24
27
30
33

17
15.6
13.9
12.5
11.4

17.5
19
23
26
33

650
700
700
750
800

0.25
0.25
0.25
0.25
0.25

1
1
1
1
1

16.7
18.2
20.6
22.8
25.1

68
62
55
50
45

1N5938B
1N5939B
1N5940B
1N5941B
1N5942B

36
39
43
47
51

10.4
9.6
8.7
8
7.3

38
45
53
67
70

850
900
950
1000
1100

0.25
0.25
0.25
0.25
0.25

1
1
1
1
1

27.4
29.7
32.7
35.8
38.8

41
38
34
31
29

1N5943B
1N5944B
1N5945B
1N5946B
1N5947B

56
62
68
75
82

6.7
6
5.5
5
4.6

86
100
120
140
160

1300
1500
1700
2000
2500

0.25
0.25
0.25
0.25
0.25

1
1
1
1
1

42.6
47.1
51.7
56
62.2

26
24
22
20
18

@ VR
Volts

Maximum DC
Zener
Current
IZM
mAdc

(continued)
*Indicates JEDEC Registered Data.

500 mW DO-35 Glass Data Sheet


6-126

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

*ELECTRICAL CHARACTERISTICS continued (TL = 30C unless otherwise noted. VF = 1.5 Volts Max @ lF = 200 mAdc for all
types.)

Motorola
Type
Number
(Note 1)

Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 2 and 3)

Test
Current
IZT
mA

ZZT @ IZT
Ohms

ZZK
Ohms

1N5948B
1N5949B
1N5950B
1N5951B
1N5952B

91
100
110
120
130

4.1
3.7
3.4
3.1
2.9

200
250
300
380
450

1N5953B
1N5954B
1N5955B
1N5956B

150
160
180
200

2.5
2.3
2.1
1.9

600
700
900
1200

Max. Zener Impedance (Note 4)

Max. Reverse
Leakage Current

IZK
mA

IR
A

3000
3100
4000
4500
5000

0.25
0.25
0.25
0.25
0.25

1
1
1
1
1

69.2
76
83.6
91.2
98.8

16
15
13
12
11

6000
6500
7000
8000

0.25
0.25
0.25
0.25

1
1
1
1

114
121.6
136.8
152

10
9
8
7

@ VR
Volts

Maximum DC
Zener
Current
IZM
mAdc

*Indicates JEDEC Registered Data.


NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION
Tolerance designation Device tolerances of 5% are indicated by a B suffix.

NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT


Motorola guarantees the zener voltage when meausred at 90 seconds while maintaining the
lead temperature (TL) at 30C 1C, 3/8 from the diode body.
NOTE 4. ZENER IMPEDANCE (ZZ) DERIVATION

NOTE 2. SPECIAL SELECTIONS AVAILABLE INCLUDE:


Nominal zener voltages between those shown and 1% and 2% tight voltage tolerances.
Consult factory.

Motorola TVS/Zener Device Data

The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed
on IZT or IZK.

500 mW DO-35 Glass Data Sheet


6-127

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 1.5 V Max, IF = 200 mA for all types)

Motorola
Type No.
(Note 1)

Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 2)

Test
Current
IZT
mA

Maximum
Zener
Current
IZM
mA

Surge
Current
@ TA = 25C
ir mA
(Note 4)

ZZT @ IZT
Ohms

ZZK @ IZK
Ohms

IZK
mA

3EZ3.9D5
3EZ4.3D5
3EZ4.7D5
3EZ5.1D5

3.9
4.3
4.7
5.1

192
174
160
147

4.5
4.5
4
3.5

400
400
500
550

1
1
1
1

80
30
20
5

1
1
1
1

630
590
550
520

4.4
4.1
3.8
3.5

3EZ5.6D5
3EZ6.2D5
3EZ6.8D5
3EZ7.5D5

5.6
6.2
6.8
7.5

134
121
110
100

2.5
1.5
2
2

600
700
700
700

1
1
1
0.5

5
5
5
5

2
3
4
5

480
435
393
360

3.3
3.1
2.9
2.66

3EZ8.2D5
3EZ9.1D5
3EZ10D5
3EZ11D5

8.2
9.1
10
11

91
82
75
68

2.3
2.5
3.5
4

700
700
700
700

0.5
0.5
0.25
0.25

5
3
3
1

6
7
7.6
8.4

330
297
270
245

2.44
2.2
2
1.82

3EZ12D5
3EZ13D5
3EZ14D5
3EZ15D5

12
13
14
15

63
58
53
50

4.5
4.5
5
5.5

700
700
700
700

0.25
0.25
0.25
0.25

1
0.5
0.5
0.5

9.1
9.9
10.6
11.4

225
208
193
180

1.66
1.54
1.43
1.33

3EZ16D5
3EZ17D5
3EZ18D5
3EZ19D5

16
17
18
19

47
44
42
40

5.5
6
6
7

700
750
750
750

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

12.2
13
13.7
14.4

169
159
150
142

1.25
1.18
1.11
1.05

3EZ20D5
3EZ22D5
3EZ24D5
3EZ27D5

20
22
24
27

37
34
31
28

7
8
9
10

750
750
750
750

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

15.2
16.7
18.2
20.6

135
123
112
100

1
0.91
0.83
0.74

3EZ28D5
3EZ30D5
3EZ33D5
3EZ36D5

28
30
33
36

27
25
23
21

12
16
20
22

750
1000
1000
1000

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

21
22.5
25.1
27.4

96
90
82
75

0.71
0.67
0.61
0.56

3EZ39D5
3EZ43D5
3EZ47D5
3EZ51D5

39
43
47
51

19
17
16
15

28
33
38
45

1000
1500
1500
1500

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

29.7
32.7
35.6
38.8

69
63
57
53

0.51
0.45
0.42
0.39

3EZ56D5
3EZ62D5
3EZ68D5
3EZ75D5

56
62
68
75

13
12
11
10

50
55
70
85

2000
2000
2000
2000

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

42.6
47.1
51.7
56

48
44
40
36

0.36
0.32
0.29
0.27

3EZ82D5
3EZ91D5
3EZ100D5
3EZ110D5

82
91
100
110

9.1
8.2
7.5
6.8

95
115
160
225

3000
3000
3000
4000

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

62.2
69.2
76
83.6

33
30
27
25

0.24
0.22
0.2
0.18

3EZ120D5
3EZ130D5
3EZ140D5
3EZ150D5

120
130
140
150

6.3
5.8
5.3
5

300
375
475
550

4500
5000
5000
6000

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

91.2
98.8
106.4
114

22
21
19
18

0.16
0.15
0.14
0.13

3EZ160D5
3EZ170D5
3EZ180D5
3EZ190D5

160
170
180
190

4.7
4.4
4.2
4

625
650
700
800

6500
7000
7000
8000

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

121.6
130.4
136.8
144.8

17
16
15
14

0.12
0.12
0.11
0.1

Max Zener Impedance


(Note 3)

Leakage
Current
IR @ VR
A Max
Volts

(continued)

500 mW DO-35 Glass Data Sheet


6-128

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS continued (TA = 25C unless otherwise noted) VF = 1.5 V Max, IF = 200 mA for all types)

Motorola
Type No.
(Note 1)

Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 2)

Test
Current
IZT
mA

ZZT @ IZT
Ohms

ZZK @ IZK
Ohms

IZK
mA

3EZ200D5
3EZ220D5
3EZ240D5
3EZ270D5

200
220
240
270

3.7
3.4
3.1
2.8

875
1600
1700
1800

8000
9000
9000
9000

0.25
0.25
0.25
0.25

0.5
1
1
1

3EZ300D5
3EZ330D5
3EZ360D5
3EZ400D5

300
330
360
400

2.5
2.3
2.1
1.9

1900
2200
2700
3500

9000
9000
9000
9000

0.25
0.25
0.25
0.25

1
1
1
1

Max Zener Impedance


(Note 3)

NOTE 1. TOLERANCES
Suffix 5 indicates 5% tolerance. Any other tolerance will be considered as a special device.
NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT
Motorola guarantees the zener voltage when measured at 40 ms 10 ms 3/8 from the diode
body, and an ambient temperature of 25C (+8C, 2C)

Maximum
Zener
Current
IZM
mA

Surge
Current
@ TA = 25C
ir mA
(Note 4)

152
167
182
205

13
12
11
10

0.1
0.09
0.09
0.08

228
251
274
304

9
8
8
7

0.07
0.06
0.06
0.06

Leakage
Current
IR @ VR
A Max
Volts

NOTE 4. SURGE CURRENT (ir) NON-REPETITIVE


The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual device capability is as described in Figure 3 of General Data sheet for Surmetic 30s.

NOTE 3. ZENER IMPEDANCE (ZZ) DERIVATION


The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed
on IZT or IZK.

Motorola TVS/Zener Device Data

NOTE 5. SPECIAL SELECTIONS AVAILABLE INCLUDE:


Nominal zener voltages between those shown. Tight voltage tolerances such as 1% and
2%. Consult factory.

500 mW DO-35 Glass Data Sheet


6-129

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) VF = 1.5 V Max, IF = 200 mA for all types.

Type No.
(Note 1)

Min

Max

Test
Current
IZT
mA

MZD3.9
MZD4.3
MZD4.7
MZD5.1
MZD5.6

3.7
4
4.4
4.8
5.2

4.1
4.6
5
5.4
6

MZD6.2
MZD6.8
MZD7.5
MZD8.2
MZD9.1

5.8
6.4
7
7.7
8.5

MZD10
MZD11
MZD12
MZD13
MZD15

Zener Voltage
(Note 2)

Zener Impedance at IZT


f = 1000 Hz (Ohm)

Surge Current
@ TL = 25C
ir mA
(Note 3)

Typ

Max

Blocking Voltage
IR = 1 A

Typical
TC
%/C

100
100
100
100
100

3.8
3.8
3.8
2
1

7
7
7
5
2

1.5

0.06
+0.055
+0.03
+0.03
+0.038

1380
1260
1190
1070
970

6.6
7.2
7.9
8.7
9.6

100
100
100
100
50

1
1
1
1
2

2
2
2
2
4

1.5
2
2
3.5
3.5

+0.045
+0.05
+0.058
+0.062
+0.068

890
810
730
660
605

9.4
10.4
11.4
12.4
13.8

10.6
11.6
12.7
14.1
15.8

50
50
50
50
50

2
4
4
5
5

4
7
7
10
10

5
5
7
7
10

+0.075
+0.076
+0.077
+0.079
+0.082

550
500
454
414
380

MZD16
MZD18
MZD20
MZD22
MZD24

15.3
16.8
18.8
20.8
22.8

17.1
19.1
21.2
23.3
25.6

25
25
25
25
25

6
6
6
6
7

15
15
15
15
15

10
10
10
12
12

+0.083
+0.085
+0.086
+0.087
+0.088

344
304
285
250
225

MZD27
MZD30
MZD33
MZD36
MZD39

25.1
28
31
34
37

28.9
32
35
38
41

25
25
25
10
10

7
8
8
21
21

15
15
15
40
40

14
14
17
17
20

+0.09
+0.091
+0.092
+0.093
+0.094

205
190
170
150
135

MZD43
MZD47
MZD51
MZD56
MZD62

40
44
48
52
58

46
50
54
60
66

10
10
10
10
10

24
24
25
25
25

45
45
60
60
80

20
24
24
28
28

+0.095
+0.095
+0.096
+0.096
+0.097

125
115
110
95
90

MZD68
MZD75
MZD82
MZD91
MZD100

64
70
77
85
94

72
79
88
96
106

10
10
10
5
5

25
30
30
60
60

80
100
100
200
200

34
34
41
41
50

+0.097
+0.098
+0.098
+0.099
+0.11

80
70
65
60
55

MZD110
MZD120
MZD130
MZD150
MZD160

104
114
124
138
153

116
127
141
156
171

5
5
5
5
5

80
80
110
110
150

250
250
300
300
350

50
60
60
75
75

+0.11
+0.11
+0.11
+0.11
+0.11

50
45

MZD180
MZD200

168
188

191
212

5
5

150
150

350
350

90
90

+0.11
+0.11

NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION


The type numbers listed have zener voltage min/max limits as shown.

NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT


The zener voltage is measured after the test current (IZT) has been applied for 40 10 milliseconds, while maintaining a lead temperautre (TL) of 30C at a point of 10 mm from the diode
body.

500 mW DO-35 Glass Data Sheet


6-130

NOTE 3. (ir) NON-REPETITIVE SURGE CURRENT


Maximum peak, non-repetitive reverse surge current of half square wave or equivalent sine
wave pulse of 50 ms duration, superimposed on the test current (IZT).

NOTE 4. SPECIAL SELECTIONS AVAILABLE INCLUDE:


Nominal zener voltages between those shown. Tight voltage tolerances such as 1% and
2%. Consult factory.

Motorola TVS/Zener Device Data

GENERAL DATA 500 mW DO-35 GLASS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 1.5 V Max, lF = 200 mA for all types

Motorola
Type No.
(Note 1)

Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 2)

VR
Volts

Surge
Current
@ TA = 25C
ir mA
(Note 4)

Test Current
IZT
mA

ZZT @ IZT
Ohms

ZZK @ IZK
Ohms

IZK
mA

MZP4728A
MZP4729A
MZP4730A
MZP4731A
MZP4732A

3.3
3.6
3.9
4.3
4.7

76
69
64
58
53

10
10
9
9
8

400
400
400
400
500

1
1
1
1
1

100
100
50
10
10

1
1
1
1
1

1380
1260
1190
1070
970

MZP4733A
MZP4734A
MZP4735A
MZP4736A
MZP4737A

5.1
5.6
6.2
6.8
7.5

49
45
41
37
34

7
5
2
3.5
4

550
600
700
700
700

1
1
1
1
0.5

10
10
10
10
10

1
2
3
4
5

890
810
730
660
605

MZP4738A
MZP4739A
MZP4740A
MZP4741A
MZP4742A

8.2
9.1
10
11
12

31
28
25
23
21

4.5
5
7
8
9

700
700
700
700
700

0.5
0.5
0.25
0.25
0.25

10
10
10
5
5

6
7
7.6
8.4
9.1

550
500
454
414
380

MZP4743A
MZP4744A
MZP4745A
MZP4746A
MZP4747A

13
15
16
18
20

19
17
15.5
14
12.5

10
14
16
20
22

700
700
700
750
750

0.25
0.25
0.25
0.25
0.25

5
5
5
5
5

9.9
11.4
12.2
13.7
15.2

344
304
285
250
225

MZP4748A
MZP4749A
MZP4750A
MZP4751A
MZP4752A

22
24
27
30
33

11.5
10.5
9.5
8.5
7.5

23
25
35
40
45

750
750
750
1000
1000

0.25
0.25
0.25
0.25
0.25

5
5
5
5
5

16.7
18.2
20.6
22.8
25.1

205
190
170
150
135

MZP4753A
MZP4754A
MZP4755A
MZP4756A
MZP4757A

36
39
43
47
51

7
6.5
6
5.5
5

50
60
70
80
95

1000
1000
1500
1500
1500

0.25
0.25
0.25
0.25
0.25

5
5
5
5
5

27.4
29.7
32.7
35.8
38.8

125
115
110
95
90

MZP4758A
MZP4759A
MZP4760A
MZP4761A
MZP4762A

56
62
68
75
82

4.5
4
3.7
3.3
3

110
125
150
175
200

2000
2000
2000
2000
3000

0.25
0.25
0.25
0.25
0.25

5
5
5
5
5

42.6
47.1
51.7
56
62.2

80
70
65
60
55

MZP4763A
MZP4764A
1M110ZS5
1M120ZS5
1M130ZS5

91
100
110
120
130

2.8
2.5
2.3
2
1.9

250
350
450
550
700

3000
3000
4000
4500
5000

0.25
0.25
0.25
0.25
0.25

5
5
5
5
5

69.2
76
83.6
91.2
98.8

50
45

1M150ZS5
1M160ZS5
1M180ZS5
1M200ZS5

150
160
180
200

1.7
1.6
1.4
1.2

1000
1100
1200
1500

6000
6500
7000
8000

0.25
0.25
0.25
0.25

5
5
5
5

114
121.6
136.8
152

Max Zener Impedance


(Note 3)

NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION


The type numbers listed have a standard tolerance on the nominal zener voltage of 5%. The
tolerance on the 1M type numbers is indicated by the digits following ZS in the part number.
5 indicates a 5% VZ tolerance.
NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT
Motorola guarantees the zener voltage when measured at 90 seconds while maintaining the
lead temperature (TL) at 30C 1C, 3/8 from the diode body.
NOTE 3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from the 60 cycle ac voltage, which results when an ac

Motorola TVS/Zener Device Data

Leakage
Current
IR
@
A Max

current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed
on IZT or IZK.
NOTE 4. SURGE CURRENT (ir) NON-REPETITIVE
The rating listed in the electrical characteristics table is maximum peak, non-repetitive,
reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second
duration superimposed on the test current, IZT, however, actual device capability is as
described in Figure 3 of General Data Surmetic 30.
NOTE 5. SPECIAL SELECTIONS AVAILABLE INCLUDE:
Nominal zener voltages between those shown. Tight voltage tolerances such as 1% and
2%. Consult factory.

500 mW DO-35 Glass Data Sheet


6-131

GENERAL DATA 500 mW DO-35 GLASS

Zener Voltage Regulator Diodes Axial Leaded


13 Watt DO-41 Surmetic 30

B
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.

K
F

DIM
A
B
D
F
K

A
F
K

MILLIMETERS
MIN
MAX
4.07
5.20
2.04
2.71
0.71
0.86

1.27
27.94

INCHES
MIN
MAX
0.160 0.205
0.080 0.107
0.028 0.034

0.050
1.100

CASE 59-03
DO-41
PLASTIC
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)

MULTIPLE PACKAGE QUANTITY (MPQ)


REQUIREMENTS
Package Option

Type No. Suffix

MPQ (Units)

Tape and Reel

RL

6K

Tape and Ammo

TA

4K

(Refer to Section 10 for more information on Packaging Specifications.)

500 mW DO-35 Glass Data Sheet


6-132

Motorola TVS/Zener Device Data

MOTOROLA

SEMICONDUCTOR
TECHNICAL DATA

1N5333B
through
1N5388B

5 Watt Surmetic 40
Silicon Zener Diodes
This is a complete series of 5 Watt Zener Diodes with tight limits and better operating
characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.
All this is in an axial-lead, transfer-molded plastic package that offers protection in all common environmental conditions.

5 WATT
ZENER REGULATOR
DIODES
3.3200 VOLTS

Specification Features:

Up to 180 Watt Surge Rating @ 8.3 ms


Maximum Limits Guaranteed on Seven Electrical Parameters
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION: Any
WEIGHT: 0.7 gram (approx)
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea

CASE 17
PLASTIC

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

PD

Watts

40

mW/C

65 to +200

DC Power Dissipation @ TL = 75C


Lead Length = 3/8
Derate above 75C

P D , MAXIMUM POWER DISSIPATION (WATTS)

Operating and Storage Junction Temperature Range

TJ, Tstg

8
L = LEAD LENGTH
L = TO HEAT SINK
L = (SEE FIGURE 5)

L = 1/8
6
L = 3/8
4
L = 1
2

0
0

20

40

60

80

100

120

140

160

180

200

TL, LEAD TEMPERATURE (C)

Figure 1. Power Temperature Derating Curve

5 Watt Surmetic 40 Data Sheet


6-133

Motorola TVS/Zener Device Data

1N5333B through 1N5388B

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.2 Max @ IF = 1 A for all types)

JEDEC
Type No.
(Note 1)

Nominal
Zener
Voltage
VZ @ IZT
Volts
(Note 2)

Test
Current
IZT
mA

ZZT @IZT
Ohms
(Note 2)

ZZK @ IZK = 1 mA
Ohms
(Note 2)

IR
A

1N5333B
1N5334B
1N5335B
1N5336B
1N5337B

3.3
3.6
3.9
4.3
4.7

380
350
320
290
260

3
2.5
2
2
2

400
500
500
500
450

1N5338B
1N5339B
1N5340B
1N5341B
1N5342B

5.1
5.6
6
6.2
6.8

240
220
200
200
175

1.5
1
1
1
1

1N5343B
1N5344B
1N5345B
1N5346B
1N5347B

7.5
8.2
8.7
9.1
10

175
150
150
150
125

1N5348B
1N5349B
1N5350B
1N5351B
1N5352B

11
12
13
14
15

1N5353B
1N5354B
1N5355B
1N5356B
1N5357B

Max Reverse
Leakage Current

Maximum
Regulator
Current
Max Voltage
IZM
Regulation
mA
VZ, Volt
(Note 5)
(Note 4)

VR
Volts

Max
Surge
Current
ir, Amps
(Note 3)

300
150
50
10
5

1
1
1
1
1

20
18.7
17.6
16.4
15.3

0.85
0.8
0.54
0.49
0.44

1440
1320
1220
1100
1010

400
400
300
200
200

1
1
1
1
10

1
2
3
3
5.2

14.4
13.4
12.7
12.4
11.5

0.39
0.25
0.19
0.1
0.15

930
865
790
765
700

1.5
1.5
2
2
2

200
200
200
150
125

10
10
10
7.5
5

5.7
6.2
6.6
6.9
7.6

10.7
10
9.5
9.2
8.6

0.15
0.2
0.2
0.22
0.22

630
580
545
520
475

125
100
100
100
75

2.5
2.5
2.5
2.5
2.5

125
125
100
75
75

5
2
1
1
1

8.4
9.1
9.9
10.6
11.5

8
7.5
7
6.7
6.3

0.25
0.25
0.25
0.25
0.25

430
395
365
340
315

16
17
18
19
20

75
70
65
65
65

2.5
2.5
2.5
3
3

75
75
75
75
75

1
0.5
0.5
0.5
0.5

12.2
12.9
13.7
14.4
15.2

6
5.8
5.5
5.3
5.1

0.3
0.35
0.4
0.4
0.4

295
280
265
250
237

1N5358B
1N5359B
1N5360B
1N5361B
1N5362B

22
24
25
27
28

50
50
50
50
50

3.5
3.5
4
5
6

75
100
110
120
130

0.5
0.5
0.5
0.5
0.5

16.7
18.2
19
20.6
21.2

4.7
4.4
4.3
4.1
3.9

0.45
0.55
0.55
0.6
0.6

216
198
190
176
170

1N5363B
1N5364B
1N5365B
1N5366B
1N5367B

30
33
36
39
43

40
40
30
30
30

8
10
11
14
20

140
150
160
170
190

0.5
0.5
0.5
0.5
0.5

22.8
25.1
27.4
29.7
32.7

3.7
3.5
3.3
3.1
2.8

0.6
0.6
0.65
0.65
0.7

158
144
132
122
110

1N5368B
1N5369B
1N5370B
1N5371B
1N5372B

47
51
56
60
62

25
25
20
20
20

25
27
35
40
42

210
230
280
350
400

0.5
0.5
0.5
0.5
0.5

35.8
38.8
42.6
42.5
47.1

2.7
2.5
2.3
2.2
2.1

0.8
0.9
1
1.2
1.35

100
93
86
79
76

1N5373B
1N5374B
1N5375B
1N5376B
1N5377B

68
75
82
87
91

20
20
15
15
15

44
45
65
75
75

500
620
720
760
760

0.5
0.5
0.5
0.5
0.5

51.7
56
62.2
66
69.2

2
1.9
1.8
1.7
1.6

1.5
1.6
1.8
2
2.2

70
63
58
54.5
52.5

1N5378B
1N5379B
1N5380B
1N5381B
1N5382B

100
110
120
130
140

12
12
10
10
8

90
125
170
190
230

800
1000
1150
1250
1500

0.5
0.5
0.5
0.5
0.5

76
83.6
91.2
98.8
106

1.5
1.4
1.3
1.2
1.2

2.5
2.5
2.5
2.5
2.5

47.5
43
39.5
36.6
34

Max Zener Impedance

(continued)

Devices listed in bold, italic are Motorola preferred devices.

5 Watt Surmetic 40 Data Sheet


6-134

Motorola TVS/Zener Device Data

1N5333B through 1N5388B

ELECTRICAL CHARACTERISTICS continued (TA = 25C unless otherwise noted, VF = 1.2 Max @ IF = 1 A for all types)

JEDEC
Type No.
(Note 1)

Nominal
Zener
Voltage
VZ @ IZT
Volts
(Note 2)

Test
Current
IZT
mA

ZZT @IZT
Ohms
(Note 2)

ZZK @ IZK = 1 mA
Ohms
(Note 2)

IR
A

1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
1N5388B

150
160
170
180
190
200

8
8
8
5
5
5

330
350
380
430
450
480

1500
1650
1750
1750
1850
1850

0.5
0.5
0.5
0.5
0.5
0.5

Max Reverse
Leakage Current

Max Zener Impedance

NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION


The JEDEC type numbers shown indicate a tolerance of 5%.

VR
Volts

Max
Surge
Current
ir, Amps
(Note 3)

114
122
129
137
144
152

1.1
1.1
1
1
0.9
0.9

Maximum
Regulator
Current
Max Voltage
IZM
Regulation
mA
VZ, Volt
(Note 5)
(Note 4)

3
3
3
4
5
5

31.6
29.4
28
26.4
25
23.6

NOTE 4. VOLTAGE REGULATION (VZ)

NOTE 2. ZENER VOLTAGE (VZ) AND IMPEDANCE (ZZT & ZZK)

Test conditions for voltage regulation are as follows: VZ measurements are made at 10% and
then at 50% of the IZ max value listed in the electrical characteristics table. The test current
time duration for each VZ measurement is 40 10 ms. (TA = 25C +8, 2C). Mounting contact
located as specified in Note 2.

Test conditions for zener voltage and impedance are as follows: IZ is applied 40 10 ms prior
to reading. Mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips
to the body of the diode. (TA = 25C +8, 2C).

NOTE 5. MAXIMUM REGULATOR CURRENT (IZM)

NOTE 3. SURGE CURRENT (ir)


Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width, PW, of 8.3 ms. The data given in Figure 6 may be used to find the
maximum surge current for a square wave of any pulse width between 1ms and 1000 ms by
plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and
200 V zeners, are shown in Figure 7. Mounting contact located as specified in Note 3. (TA =
25C +8, 2C.)

The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
it applies only to the B-suffix device. The actual IZM for any device may not exceed the value
of 5 watts divided by the actual VZ of the device. TL = 75C at 3/8 maximum from the device
body.

NOTE 6. SPECIALS AVAILABLE INCLUDE:


Nominal zener voltages between the voltages shown and tighter voltage tolerance such as
1% and 2%. Consult factory.

300
200

10

VZ , TEMPERATURE COEFFICIENT
(mV/C) @ I ZT

VZ , TEMPERATURE COEFFICIENT
(mV/C) @ I ZT

TEMPERATURE COEFFICIENTS

100

6
4
2
RANGE
0
2
3

7
5
6
8
VZ, ZENER VOLTAGE @ IZT (VOLTS)

Figure 2. Temperature Coefficient-Range


for Units 3 to 10 Volts

10

RANGE

50
30
20
10
5
0

20

40

60 80 100 120 140 160 180


VZ, ZENER VOLTAGE @ IZT (VOLTS)

200 220

Figure 3. Temperature Coefficient-Range


for Units 10 to 220 Volts

Devices listed in bold, italic are Motorola preferred devices.

Motorola TVS/Zener Device Data

5 Watt Surmetic 40 Data Sheet


6-135

JL (t, D), TRANSIENT THERMAL RESISTANCE


JUNCTION-TO-LEAD ( C/W)

1N5333B through 1N5388B

20
10

D = 0.5

D = 0.2

2
1

PPK

t1

D = 0.1

t2

D = 0.05
D = 0.01

0.5
D=0
0.2
0.00
1

DUTY CYCLE, D = t1/t2


SINGLE PULSE TJL = JL(t)PPK
REPETITIVE PULSES TJL = JL(t, D)PPK

NOTE: BELOW 0.1 SECOND, THERMAL


NOTE: RESPONSE CURVE IS APPLICABLE
NOTE: TO ANY LEAD LENGTH (L).
0.00
5

0.01

0.05

0.1

0.5

10

20

50

100

t, TIME (SECONDS)

40

40
i r , PEAK SURGE CURRENT (AMPS)

JL, JUNCTION-TO-LEAD THERMAL RESISTANCE (C/W)

Figure 4. Typical Thermal Response


L, Lead Length = 3/8 Inch

30

20
L

10
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0

0.2

0.4
0.6
0.8
L, LEAD LENGTH TO HEAT SINK (INCH)

20
PW = 1 ms*
10
PW = 8.3 ms*

4
2
1
0.4

*SQUARE WAVE

0.2
0.1

PW = 1000 ms*
3

8 10

20

30

40

60 80 100

200

NOMINAL VZ (V)

Figure 5. Typical Thermal Resistance

Figure 6. Maximum Non-Repetitive Surge Current


versus Nominal Zener Voltage
(See Note 3)

30
20

T = 25C

10

1000

VZ = 3.3 V
I Z , ZENER CURRENT (mA)

i r , PEAK SURGE CURRENT (AMPS)

PW = 100 ms*

5
2
1
0.5

VZ = 200 V
PLOTTED FROM INFORMATION
GIVEN IN FIGURE 6

0.2
0.1

TC = 25C

100

10

1
0.1

10

100
PW, PULSE WIDTH (ms)

100
0

Figure 7. Peak Surge Current versus Pulse Width


(See Note 3)

4
5
6
7
8
VZ, ZENER VOLTAGE (VOLTS)

10

Figure 8. Zener Voltage versus Zener Current


VZ = 3.3 thru 10 Volts

Devices listed in bold, italic are Motorola preferred devices.

5 Watt Surmetic 40 Data Sheet


6-136

Motorola TVS/Zener Device Data

1N5333B through 1N5388B

1000

I Z , ZENER CURRENT (mA)

I Z , ZENER CURRENT (mA)

T = 25C
100

10

0.1

100

10

0.1
10

20

30
40
50
60
VZ, ZENER VOLTAGE (VOLTS)

70

80

Figure 9. Zener Voltage versus Zener Current


VZ = 11 thru 75 Volts

80

100

120

140
160
180
VZ, ZENER VOLTAGE (VOLTS)

200

220

Figure 10. Zener Voltage versus Zener Current


VZ = 82 thru 200 Volts

APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order
to calculate its value. The following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = LA PD + TA
LA is the lead-to-ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL + TJL
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 5 for dc power.
TJL = JL PD

For worst-case design, using expected limits of IZ, limits of


PD and the extremes of TJ (TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
V = VZ TJ
VZ, the zener voltage temperature coefficient, is found from
Figures 2 and 3.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Data of Figure 4 should not be used to compute surge capability. Surge limitations are given in Figure 6. They are lower
than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation
should the limits of Figure 6 be exceeded.

Devices listed in bold, italic are Motorola preferred devices.

Motorola TVS/Zener Device Data

5 Watt Surmetic 40 Data Sheet


6-137

Zener Voltage Regulator Diodes Axial Leaded


5 Watt Surmetic 40

B
NOTE:
1. LEAD DIAMETER & FINISH NOT CONTROLLED
WITHIN DIM F.

D
K
2

DIM
A
B
D
F
K

INCHES
MIN
MAX
0.330 0.350
0.130 0.145
0.037 0.043

0.050
1.000 1.250

MILLIMETERS
MIN
MAX
8.38
8.89
3.30
3.68
0.94
1.09

1.27
25.40 31.75

F
K

CASE 17-02
PLASTIC
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)

MULTIPLE PACKAGE QUANTITY (MPQ)


REQUIREMENTS
Package Option

Type No. Suffix

MPQ (Units)

Tape and Reel

RL

4K

Tape and Ammo

TA

2K

(Refer to Section 10 for more information on Packaging Specifications.)

Motorola TVS/Zener Device Data

5 Watt Surmetic 40 Data Sheet


6-138

Chaves ticas

CROMAX ELETRNICA LTDA.

PASTILHA
AlGaAs Emissor
NPN Fototransistor

ATUAO
Refletiva

ELEMENTOS
Emissor Hialino
Sensor Fume

ESPECIFICAES TCNICAS
If = 100mA
If = 20mA
Vr = 4V

1,3V
1,2V

1,7V
1,5V
10A

9,70,2

If = 100mA

940nm

Ic = 100A
Ib = 0
Ie = 100A
Ib = 0
Vce = 10V
Vce = 5V
If = 40mA

5,10,2

18,350,4

Tenso Reversa
(Vf)
Corrente Reversa
(If)
Comprimento de
onda
TensodeRuptura
C E (Vbceo)
Tenso deRuptura
E C (Vbeco)
Corrente Escuro
(Iceo)
Corrente Claro
(IL)

30V
5V
0,1A
50A

10,00,4
Ponto indica o Fototransistor

CHAVE DE CODIGO

C 7L3

CROMAX ELETRNICA LTDA.

RUA PEREIRO, 13 BAIRRO VILA NOVA CUMBICA CEP 07231-010 GUARULHOS SP


Fone: (0xx11) 6462-2100 Fax: (0xx11) 6462-2111 Site: www.cromatek.com.br Email: cromatek@cromatek.com.br

3,80,2

18,10,2

Min.

.6
R1

OUT

Mx.

Cond. Teste

2,650,2

IN

Tp.

Parmetro

LM117/217
LM317

1.2V TO 37V VOLTAGE REGULATOR

OUTPUT VOLTAGE RANGE : 1.2 TO 37V


OUTPUT CURRENT IN EXCESS OF 1.5A
0.1% LINE AND LOAD REGULATION
FLOATING OPERATION FOR HIGH
VOLTAGES
COMPLETE SERIES OF PROTECTIONS :
CURRENT LIMITING, THERMAL
SHUTDOWN AND SOA CONTROL

DESCRIPTION
The LM117/LM217/LM317 are
monolithic
integrated circuit in TO-220, ISOWATT220, TO-3
and D2PAK packages intended for use as
positive adjustable voltage regulators.
They are designed to supply more than 1.5A of
load current with an output voltage adjustable
over a 1.2 to 37V range.
The nominal output voltage is selected by means
of only a resistive divider, making the device
exceptionally easy to use and eliminating the
stocking of many fixed regulators.

TO-3

D2PAK

TO-220

ISOWATT220

ABSOLUTE MAXIMUM RATING


Symbol
V i-o

Parameter

Value

Unit

40

Input-output Differential Voltage

IO

Output Current

T op

Operating Junction Temperature for: LM117


LM217
LM317

Intenrally Limited

P tot

Power Dissipation

T st g

Storage Temperature

-55 to 150
-25 to 150
0 to 125

C
C
o
C
o

Internally Limited
o

- 65 to 150

THERMAL DATA
Symbol

Parameter

R thj- ca se Thermal Resistance Junction-case


R thj- amb Thermal Resistance Junction-ambient

November 1999

TO-3
Max
Max

4
35

TO-220
3
50

ISOWATT220
4
60

D2PAK
3
62.5

Unit
o
o

C/W
C/W

1/11

LM117/217/317
CONNECTION DIAGRAM AND ORDERING NUMBERS (top view)

TO-220

ISOWATT220

D2PAK

Type

TO-3

LM117

LM117K

LM217

LM217K

LM217T

LM317

LM317K

LM317T

SCHEMATIC DIAGRAM

2/11

TO-3

TO-220

ISOWATT220

D PAK
LM217D2T

LM317P

LM317D2T

LM117/217/317
BASIC ADJUSTABLE REGULATOR

ELECTRICAL CHARACTERISTICS (Vi - Vo = 5 V, Io = 500 mA, IMAX = 1.5A and PMAX = 20W, unless
otherwise specified)
Symbol

Parameter

Test Conditions

LM117/LM217
Min.

V o
V o

Line Regulation
Load Regulation

Vi - Vo = 3 to 40 V
Vo 5V
Io = 10 mA to IMAX

T j = 25 o C
o

Max.

LM317
Min.

Unit

Typ.

Max.

0.01

0.02

0.01

0.04

%/V

0.02

0.05

0.02

0.07

%/V

15

25

mV

20

50

20

70

mV

0.1

0.3

0.1

0.5

0.3

0.3

1.5

Adjustment Pin Current

50

100

50

100

I ADJ

Adjustment Pin Current Vi - Vo = 2.5 to 40 V


Io = 10 mA to IMAX

0.2

0.2

V REF

Reference Voltage
Vi - Vo = 2.5 to 40 V
(between pin 3 and pin Io = 10 mA to IMAX
1)
PD PMAX
Output Voltage
Temperature Stability

1.25

1.3

1.25

1.3

Vo 5V
Io = 10 mA to IMAX
I ADJ

Vo
Vo
I o (m in)

Minimum Load Current Vi - Vo = 40 V

I o (max )

Maximum Load
Current

T j = 25 C

Typ.

T j = 25 C

1.2

1
3.5

Vi - Vo 15 V
PD < PMAX

1.5

Vi - Vo = 40 V
PD < PMAX
o
Tj = 25 C
eN
SVR

Output Noise Voltage


(percentance of VO)

B = 10Hz to 10KHz
Tj = 25 oC

Supply Voltage
Rejection (*)

Tj = 25 oC
f = 120 Hz

1.2

C ADJ =0
C ADJ =10F

66

2.2

1
5

3.5

10

mA

2.2

0.4

0.4

0.003

0.003

65

65

dB

80

dB

80

1.5

66

(*) CADJ is connected between pin 1 and ground.


Note:
(1) Unless otherwise specified the above specs, apply over the following conditions : LM 117 Tj = 55 to 150C;
LM 217 Tj = 25 to 150C ; LM 317 Tj = 0 to 125C.

3/11

LM117/217/317
Figure 1 : Output Current vs. Input-output
Differential Voltage.

Figure 2 : Dropout Voltage vs. Junction


Temperature.

Figure 3 : Reference Voltage vs. Junction

Figure 4 : Basic Adjustable Regulator.

APPLICATION INFORMATION
The LM117/217/317 provides an internal
reference voltage of 1.25V between the output
and adjustments terminals. This is used to set a
constant current flow across an external resistor
divider (see fig. 4), giving an output voltage VO of:
R2
VO = VREF ( 1 + ) + IADJ R2
R1
The device was designed to minimize the term
IADJ (100A max) and to maintain it very constant
with line and load changes. Usually, the error
term IADJ R2 can be neglected. To obtain the
previous requirement, all the regulator quiescent
current is returned to the output terminal,
imposing a minimum load current condition. If the
load is insufficient, the output voltage will rise.
Since the LM117/217317 is a floating regulator
and sees only the input-to-output differential
4/11

voltage, supplies of very high voltage with respect


to ground can be regulated as long as the
maximum input-to-output differential is not
exceeded. Furthermore, programmable regulator
are easily obtainable and, by connecting a fixed
resistor between the adjustment and output, the
device can be used as a precision current
regulator.
In order to optimise the load regulation, the
current set resistor R1 (see fig. 4) should be tied
as close as possible to the regulator, while the
ground terminal of R2 should be near the ground
of the load to provide remote ground sensing.
Performance may be improved with added
capacitance as follow:
An input bypass capacitor of 0.1F
An adjustment terminal to ground 10F capacitor

LM117/217/317
to improve the ripple rejection of about 15 dB
(CADJ).
An 1F tantalium (or 25FAluminium electrolitic)
capacitor on the output to improve transient
response.
In additional to external capacitors, it is good

practice to add protection diodes, as shown in


fig.5.
D1 protect the device against input short circuit,
while D2 protect against output short circuit for
capacitance discharging.

Figure 5 : Voltage Regulator with Protection Diodes.

D1 protect the device against input short circuit, while D2 protects against output short circuit for capacitors discharging

Figure 6 : Slow Turn-on 15V Regulator.

Figure 7 : Current Regulator.

Io =

Vr ef
R1

+ IADJ

1.25V
R1

5/11

LM117/217/317
Figure 8 : 5V Electronic Shut-down Regulator

Figure 9 : Digitally Selected Outputs

(R2 sets maximum Vo)

Figure 10 : Battery Charger (12V)

* RS sets output impedance of charger


R2
Zo = RS (1 + )
R1
Use of RS allows low charging rates with fully charged battery.

6/11

Figure 11 : Current Limited 6V Charger

* R3 sets peak current (0.6A for 1).


** C1 recommended to filter out input transients.

LM117/217/317

TO-3 (R) MECHANICAL DATA


mm

DIM.
MIN.
A

inch

TYP.

MAX.

MIN.

TYP.

11.7

MAX.

0.460

0.96

1.10

0.037

0.043

1.70

0.066

8.7

0.342

20.0

0.787

10.9

0.429

16.9

0.665

26.2

3.88

1.031

4.09

0.152

39.50

1.555

30.10

1.185

0.161

P003N
7/11

LM117/217/317

TO-220 MECHANICAL DATA


mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

4.40

4.60

0.173

0.181

1.23

1.32

0.048

0.051

2.40

2.72

0.094

D1

0.107

1.27

0.050

0.49

0.70

0.019

0.027

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.067

F2

1.14

1.70

0.044

0.067

4.95

5.15

0.194

0.203

G1

2.4

2.7

0.094

0.106

H2

10.0

10.40

0.393

0.409

14.0

0.511

L2

16.4

L4

0.645

13.0

0.551

2.65

2.95

0.104

0.116

L6

15.25

15.75

0.600

0.620

L7

6.2

6.6

0.244

0.260

L9

3.5

3.93

0.137

0.154

DIA.

3.75

3.85

0.147

0.151

D1

L5

H2

G1

F1

L2

F2

Dia.

L5

L9
L7
L6

8/11

L4

P011C

LM117/217/317

ISOWATT220 MECHANICAL DATA


mm

DIM.
MIN.
A

4.4

inch

TYP.

MAX.

MIN.

TYP.

MAX.

4.6

0.173

0.181

2.5

2.7

0.098

0.106

2.5

2.75

0.098

0.108

0.4

0.7

0.015

0.027

0.75

0.030

0.039

F1

1.15

1.7

0.045

0.067

F2

1.15

1.7

0.045

0.067

4.95

5.2

0.195

0.204

G1

2.4

2.7

0.094

0.106

10

10.4

0.393

0.409

L2

16

0.630

28.6

30.6

1.126

1.204

L4

9.8

10.6

0.385

0.417

L6

15.9

16.4

0.626

0.645

L7

9.3

0.354

0.366

3.2

0.118

0.126

L3

L3
L6

F1

L7

F2

G1

1 2 3
L2

L4

P011G

9/11

LM117/217/317

TO-263 (D2PAK) MECHANICAL DATA


mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

4.4

4.6

0.173

0.181

A1

2.49

2.69

0.098

0.106

0.7

0.93

0.027

0.036

B2

1.14

1.7

0.044

0.067

0.45

0.6

0.017

0.023

C2

1.23

1.36

0.048

0.053

8.95

9.35

0.352

0.368

10

10.4

0.393

0.409

4.88

5.28

0.192

0.208

15

15.85

0.590

0.624

L2

1.27

1.4

0.050

0.055

L3

1.4

1.75

0.055

0.068

C2

A2

A
C

DETAILA

DETAILA
A1
B2

L2

L3
P011P6/F

10/11

LM117/217/317

Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.

11/11

LM137/LM337
3-Terminal Adjustable Negative Regulators
General Description
The LM137/LM337 are adjustable 3-terminal negative voltage regulators capable of supplying in excess of 1.5A over
an output voltage range of 1.2V to 37V. These regulators
are exceptionally easy to apply, requiring only 2 external
resistors to set the output voltage and 1 output capacitor for
frequency compensation. The circuit design has been optimized for excellent regulation and low thermal transients.
Further, the LM137 series features internal current limiting,
thermal shutdown and safe-area compensation, making
them virtually blowout-proof against overloads.
The LM137/LM337 serve a wide variety of applications including local on-card regulation, programmable-output voltage regulation or precision current regulation. The LM137/
LM337 are ideal complements to the LM117/LM317
adjustable positive regulators.

n
n
n
n
n
n
n
n
n

Excellent thermal regulation, 0.002%/W


77 dB ripple rejection
Excellent rejection of thermal transients
50 ppm/C temperature coefficient
Temperature-independent current limit
Internal thermal overload protection
P+ Product Enhancement tested
Standard 3-lead transistor package
Output is short circuit protected
LM137 Series Packages and Power Capability

Device
LM137/337

Output voltage adjustable from 1.2V to 37V


1.5A output current guaranteed, 55C to +150C
Line regulation typically 0.01%/V
Load regulation typically 0.3%

Typical Applications

Design
Load

Dissipation

Current

TO-3 (K)

20W

1.5A

TO-39 (H)

2W

0.5A

LM337

TO-220 (T)

15W

1.5A

LM337

SOT-223
(MP)

2W

1A

Features
n
n
n
n

Rated
Power

Package

Comparison between SOT-223 and


D-Pak (TO-252) Packages

Adjustable Negative Voltage Regulator

00906731

Scale 1:1

00906701

Full output current not available at high input-output voltages

C1 = 1 F solid tantalum or 10 F aluminum electrolytic required for


stability

*C2 = 1 F solid tantalum is required only if regulator is more than 4" from
power-supply filter capacitor
Output capacitors in the range of 1 F to 1000 F of aluminum or tantalum
electrolytic are commonly used to provide improved output impedance and
rejection of transients

2001 National Semiconductor Corporation

DS009067

www.national.com

LM137/LM337 3-Terminal Adjustable Negative Regulators

November 2001

LM137/LM337

Absolute Maximum Ratings

(Notes 1,

4)

Internally Limited

Input-Output Voltage Differential

40V

Operating Junction Temperature


Range
LM137

55C to +150C

0C to +125C

LM337I

40C to +125C

Storage Temperature

If Military/Aerospace specified devices are required,


please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Dissipation

LM337

65C to +150C

Lead Temperature (Soldering, 10 sec.)

300C

Plastic Package (Soldering, 4 sec.)

260C

ESD Rating

2k Volts

Electrical Characteristics (Note 1)


Parameter

Conditions

LM137
Min

Line Regulation

Tj = 25C, 3V |VIN VOUT| 40V

Load Regulation

Tj = 25C, 10 mA IOUT IMAX

Thermal Regulation

Tj = 25C, 10 ms Pulse

LM337

Typ

Max

0.01

0.02

Min

Units

Typ

Max

0.01

0.04

%/V

(Note 2) IL = 10 mA

Adjustment Pin Current


Adjustment Pin Current Charge

10 mA IL IMAX

0.3

0.5

0.3

1.0

0.002

0.02

0.003

0.04

%/W

65

100

65

100

3.0V |VIN VOUT| 40V,


TA = 25C
Reference Voltage

Tj = 25C (Note 3)

1.225 1.250 1.275 1.213 1.250 1.287

3V |VIN VOUT| 40V, (Note 3)

1.200 1.250 1.300 1.200 1.250 1.300

10 mA IOUT IMAX, P PMAX


Line Regulation

3V |VIN VOUT| 40V, (Note 2)

0.02

0.05

0.02

0.07

Load Regulation

10 mA IOUT IMAX, (Note 2)

0.3

0.3

1.5

Temperature Stability

TMIN Tj TMAX

0.6

|VIN VOUT| 40V

2.5

2.5

10

mA

|VIN VOUT| 10V

1.2

1.5

mA

Minimum Load Current


Current Limit

0.6

%/V
%
%

|VIN VOUT| 15V


K, MP and T Package

1.5

2.2

3.5

1.5

2.2

3.7

H Package

0.5

0.8

1.8

0.5

0.8

1.9

K, MP and T Package

0.24

0.4

0.15

0.4

H Package

0.15

0.17

0.10

|VIN VOUT| = 40V, Tj = 25C

RMS Output Noise, % of VOUT


Ripple Rejection Ratio

Tj = 25C, 10 Hz f 10 kHz

0.003

VOUT = 10V, f = 120 Hz

60

CADJ = 10 F

66

77

66

0.17

0.003

60

dB

77

dB

Long-Term Stability

Tj = 125C, 1000 Hours

0.3

0.3

Thermal Resistance, Junction to


Case

H Package

12

15

12

15

C/W

K Package

2.3

2.3

C/W

T Package
Thermal Resistance, Junction to
Ambient (No Heat Sink)

C/W

H Package

140

140

C/W

K Package

35

35

C/W

50
170

C/W
C/W

T Package
MP Package

Note 1: Unless otherwise specified, these specifications apply 55C Tj +150C for the LM137, 0C Tj +125C for the LM337; VIN VOUT = 5V; and IOUT
= 0.1A for the TO-39 package and IOUT = 0.5A for the TO-3, SOT-223 and TO-220 packages. Although power dissipation is internally limited, these specifications
are applicable for power dissipations of 2W for the TO-39 and SOT-223 (see Application Hints), and 20W for the TO-3, and TO-220. IMAX is 1.5A for the TO-3,
SOT-223 and TO-220 packages, and 0.2A for the TO-39 package.
Note 2: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to heating effects are
covered under the specification for thermal regulation. Load regulation is measured on the output pin at a point 18" below the base of the TO-3 and TO-39 packages.

www.national.com

LM137/LM337

Electrical Characteristics (Note 1)

(Continued)

Note 3: Selected devices with tightened tolerance reference voltage available.


Note 4: Refer to RETS137H drawing for LM137H or RETS137K drawing for LM137K military specifications.

Schematic Diagram

00906702

Thermal Regulation
When power is dissipated in an IC, a temperature gradient
occurs across the IC chip affecting the individual IC circuit
components. With an IC regulator, this gradient can be especially severe since power dissipation is large. Thermal
regulation is the effect of these temperature gradients on
output voltage (in percentage output change) per Watt of
power change in a specified time. Thermal regulation error is
independent of electrical regulation or temperature coefficient, and occurs within 5 ms to 50 ms after a change in
power dissipation. Thermal regulation depends on IC layout
as well as electrical design. The thermal regulation of a
voltage regulator is defined as the percentage change of
VOUT, per Watt, within the first 10 ms after a step of power is
applied. The LM137s specification is 0.02%/W, max.

00906703

LM137, VOUT = 10V


VIN VOUT = 40V
IIL = 0A 0.25A 0A
Vertical sensitivity, 5 mV/div

FIGURE 1.

www.national.com

LM137/LM337

Thermal Regulation

(Continued)

In Figure 1, a typical LM137s output drifts only 3 mV (or


0.03% of VOUT = 10V) when a 10W pulse is applied for
10 ms. This performance is thus well inside the specification
limit of 0.02%/W x 10W = 0.2% max. When the 10W pulse is
ended, the thermal regulation again shows a 3 mV step at
the LM137 chip cools off. Note that the load regulation error
of about 8 mV (0.08%) is additional to the thermal regulation
error. In Figure 2, when the 10W pulse is applied for 100 ms,
the output drifts only slightly beyond the drift in the first
10 ms, and the thermal error stays well within 0.1% (10 mV).
00906704

LM137, VOUT = 10V


VIN VOUT = 40V
IL = 0A 0.25A 0A
Horizontal sensitivity, 20 ms/div

FIGURE 2.

Connection Diagrams
TO-3
Metal Can Package

TO-220
Plastic Package

00906705

Bottom View
Order Number LM137K/883
LM137KPQML and LM137KPQMLV(Note 5)
See NS Package Number K02C
Order Number LM337K STEEL
See NS Package Number K02A
Case is Input

TO-39
Metal Can Package

00906707

Front View
Order Number LM337T
See NS Package Number T03B
3-Lead SOT-223

00906706

Bottom View
Order Number LM137H, LM137H/883 or LM337H
LM137HPQML and LM137HPQMLV(Note 5)
See NS Package Number H03A

00906734

Front View
Order Number LM337IMP
Package Marked N02ASee NS Package Number MA04A

Case Is Input
Note 5: See STD Mil DWG 5962P99517 for Radiation Tolerant Devices

www.national.com

LM137/LM337

Application Hints

Typical Applications

When a value for (HA) is found using the equation shown,


a heatsink must be selected that has a value that is less than
or equal to this number.

Adjustable Lab Voltage Regulator

HEATSINKING SOT-223 PACKAGE PARTS


The SOT-223 (MP) packages use a copper plane on the
PCB and the PCB itself as a heatsink. To optimize the heat
sinking ability of the plane and PCB, solder the tab of the
package to the plane.

Figures 3, 4 show the information for the SOT-223 package.


Figure 4 assumes a (JA) of 75C/W for 1 ounce copper and
51C/W for 2 ounce copper and a maximum junction temperature of 125C.

00906709

Full output current not available


at high input-output voltages
*The 10 F capacitors are optional to improve ripple rejection

Current Regulator

00906732

FIGURE 3. (JA) vs Copper (2 ounce) Area for the


SOT-223 Package

00906711

Negative Regulator with Protection Diodes

00906733

FIGURE 4. Maximum Power Dissipation vs. TAMB for


the SOT-223 Package
Please see AN1028 for power enhancement techniques to
be used with the SOT-223 package.

00906713

*When CL is larger than 20 F, D1 protects the LM137 in case the input

supply is shorted
**When C2 is larger than 10 F and VOUT is larger than 25V, D2
protects the LM137 in case the output is shorted

www.national.com

LM137/LM337

Typical Applications

(Continued)

High Stability 10V Regulator

5.2V Regulator with Electronic Shutdown*

00906714

00906710

*Minimum output . 1.3V when control input is low

Adjustable Current Regulator

00906712

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LM137/LM337

Typical Performance Characteristics

(K Steel and T Packages)

Load Regulation

Current Limit

00906716

00906717

Adjustment Current

Dropout Voltage

00906718

00906719

Temperature Stability

Minimum Operating Current

00906720

00906721

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LM137/LM337

Typical Performance Characteristics

(K Steel and T Packages) (Continued)

Ripple Rejection

Ripple Rejection

00906722

00906723

Ripple Rejection

Output Impedance

00906724

00906725

Line Transient Response

Load Transient Response

00906726

www.national.com

00906727

LM137/LM337

Physical Dimensions

inches (millimeters)

unless otherwise noted

Metal Can Package (H)


Order Number LM137H, LM137H/883 or LM337H
NS Package Number H03A

www.national.com

LM137/LM337

Physical Dimensions

inches (millimeters) unless otherwise noted (Continued)

Metal Can Package (K)


Order Number LM337K STEEL
NS Package Number K02A

Mil-Aero Metal Can Package (K)


Order Number LM137K/883
NS Package Number K02C

www.national.com

10

LM137/LM337

Physical Dimensions

inches (millimeters) unless otherwise noted (Continued)

3-Lead SOT-223 Package


Order Number LM337IMP
NS Package Number M04A

11

www.national.com

LM137/LM337 3-Terminal Adjustable Negative Regulators

Physical Dimensions

inches (millimeters) unless otherwise noted (Continued)

TO-220 Plastic Package (T)


Order Number LM337T
NS Package Number T03B

LIFE SUPPORT POLICY


NATIONALS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
National Semiconductor
Corporation
Americas
Email: support@nsc.com

www.national.com

National Semiconductor
Europe
Fax: +49 (0) 180-530 85 86
Email: europe.support@nsc.com
Deutsch Tel: +49 (0) 69 9508 6208
English Tel: +44 (0) 870 24 0 2171
Franais Tel: +33 (0) 1 41 91 8790

2. A critical component is any component of a life


support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.

National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: ap.support@nsc.com

National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

www.fairchildsemi.com

MC78XX/LM78XX/MC78XXA

3-Terminal 1A Positive Voltage Regulator


Features

Description

The MC78XX/LM78XX/MC78XXA series of three


terminal positive regulators are available in the
TO-220/D-PAK package and with several fixed output
voltages, making them useful in a wide range of
applications. Each type employs internal current limiting,
thermal shut down and safe operating area protection,
making it essentially indestructible. If adequate heat sinking
is provided, they can deliver over 1A output current.
Although designed primarily as fixed voltage regulators,
these devices can be used with external components to
obtain adjustable voltages and currents.

Output Current up to 1A
Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24V
Thermal Overload Protection
Short Circuit Protection
Output Transistor Safe Operating Area Protection

TO-220

1
D-PAK

1
1. Input 2. GND 3. Output

Internal Block Digram

Rev. 1.0.0
2001 Fairchild Semiconductor Corporation

MC78XX/LM78XX/MC78XXA

Absolute Maximum Ratings


Parameter

Symbol

Value

Unit

VI
VI

35
40

V
V

RJC

Input Voltage (for VO = 5V to 18V)


(for VO = 24V)
Thermal Resistance Junction-Cases (TO-220)

C/W

oC/W

Thermal Resistance Junction-Air (TO-220)

RJA

65

Operating Temperature Range

TOPR

0 ~ +125

-65 ~ +150

Storage Temperature Range

TSTG

C
C

Electrical Characteristics (MC7805/LM7805)


(Refer to test circuit ,0C < TJ < 125C, IO = 500mA, VI = 10V, CI= 0.33F, CO= 0.1F, unless otherwise specified)
Parameter

Output Voltage

Symbol

VO

Conditions

MC7805/LM7805
Min.

Typ.

Max.

TJ =+25 oC

4.8

5.0

5.2

5.0mA Io 1.0A, PO 15W


VI = 7V to 20V

4.75

5.0

5.25

VO = 7V to 25V

4.0

100

VI = 8V to 12V

1.6

50

IO = 5.0mA to1.5A

100

IO =250mA to
750mA

50

Unit

Line Regulation (Note1)

Regline

TJ=+25 oC

Load Regulation (Note1)

Regload

TJ=+25 oC

IQ

TJ =+25 oC

5.0

8.0

IO = 5mA to 1.0A

0.03

0.5

VI= 7V to 25V

0.3

1.3

IO= 5mA

-0.8

mV/ oC

42

V/Vo

62

73

dB

IO = 1A, TJ =+25 oC

f = 1KHz

15

230

mA

2.2

Quiescent Current
Quiescent Current Change
Output Voltage Drift

IQ
VO/T

Output Noise Voltage

VN

f = 10Hz to 100KHz, TA=+25 oC

Ripple Rejection

RR

f = 120Hz
VO = 8V to 18V

Dropout Voltage

VDrop

Output Resistance
Short Circuit Current
Peak Current

rO
ISC

VI = 35V, TA =+25

IPK

TJ =+25 C

oC

mV

mV
mA
mA

Note:
1. Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7806)


(Refer to test circuit ,0C < TJ < 125C, IO = 500mA, VI =11V, CI= 0.33F, CO= 0.1F, unless otherwise specified)
Parameter

Output Voltage

Symbol

VO

Conditions

MC7806
Min.

Typ.

Max.

TJ =+25 oC

5.75

6.0

6.25

5.0mA IO 1.0A, PO 15W


VI = 8.0V to 21V

5.7

6.0

6.3

VI = 8V to 25V

120

VI = 9V to 13V

1.5

60

IO =5mA to 1.5A

120

IO =250mA to750A

60

Unit

Line Regulation (Note1)

Regline

TJ =+25 oC

Load Regulation (Note1)

Regload

TJ =+25 oC

IQ

TJ =+25 oC

5.0

8.0

IO = 5mA to 1A

0.5

VI = 8V to 25V

1.3

IO = 5mA

-0.8

mV/ oC

VN

f = 10Hz to 100KHz, TA =+25 oC

45

V/Vo

Ripple Rejection

RR

f = 120Hz
VI = 9V to 19V

59

75

dB

Dropout Voltage

VDrop

IO = 1A, TJ =+25 oC

f = 1KHz

19

250

mA

2.2

Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage

Output Resistance

IQ
VO/T

rO

Short Circuit Current

ISC

VI= 35V, TA

Peak Current

IPK

TJ =+25 oC

=+25 oC

mV
mV
mA
mA

Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7808)


(Refer to test circuit ,0C < TJ < 125C, IO = 500mA, VI =14V, CI= 0.33F, CO= 0.1F, unless otherwise specified)
Parameter

Output Voltage

Symbol

VO

Conditions

MC7808
Min.

Typ. Max.

TJ =+25 oC

7.7

8.0

8.3

5.0mA IO 1.0A, PO 15W


VI = 10.5V to 23V

7.6

8.0

8.4

VI = 10.5V to 25V

5.0

160

VI = 11.5V to 17V

2.0

80

IO = 5.0mA to 1.5A

10

160

IO= 250mA to 750mA

5.0

80

Unit

Line Regulation (Note1)

Regline

TJ =+25 oC

Load Regulation (Note1)

Regload

TJ =+25 oC

IQ

TJ =+25 oC

5.0

8.0

IO = 5mA to 1.0A

0.05

0.5

VI = 10.5A to 25V

0.5

1.0

IO = 5mA

-0.8

mV/ oC

Quiescent Current
Quiescent Current Change
Output Voltage Drift

IQ
VO/T

mV
mV
mA
mA

Output Noise Voltage

VN

f = 10Hz to 100KHz, TA =+25 oC

52

V/Vo

Ripple Rejection

RR

f = 120Hz, VI= 11.5V to 21.5V

56

73

dB

IO = 1A, TJ=+25 C

f = 1KHz

17

230

mA

2.2

Dropout Voltage
Output Resistance
Short Circuit Current
Peak Current

VDrop
rO
ISC
IPK

VI= 35V, TA
o

TJ =+25 C

=+25 oC

Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7809)


(Refer to test circuit ,0C < TJ < 125C, IO = 500mA, VI =15V, CI= 0.33F, CO= 0.1F, unless otherwise specified)
Parameter

Output Voltage

Symbol

VO

Conditions

MC7809
Min.

Typ.

Max.

TJ =+25C

8.65

9.35

5.0mA IO 1.0A, PO 15W


VI= 11.5V to 24V

8.6

9.4

VI = 11.5V to 25V

180

VI = 12V to 17V

90

IO = 5mA to 1.5A

12

180

IO = 250mA to 750mA

90

Unit

V
mV

Line Regulation (Note1)

Regline

TJ=+25C

Load Regulation (Note1)

Regload

TJ=+25C

IQ

TJ=+25C

5.0

8.0

IO = 5mA to 1.0A

0.5

VI = 11.5V to 26V

1.3

IO = 5mA

-1

mV/ C

VN

f = 10Hz to 100KHz, TA =+25 C

58

V/Vo

RR

f = 120Hz
VI = 13V to 23V

56

71

dB

IO = 1A, TJ=+25C

17

Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage
Ripple Rejection
Dropout Voltage

IQ
VO/T

VDrop

mV
mA
mA

Output Resistance

rO

f = 1KHz

Short Circuit Current

ISC

VI= 35V, TA =+25C

250

mA

Peak Current

IPK

TJ= +25C

2.2

Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7810)


(Refer to test circuit ,0C< TJ < 125C, IO = 500mA, VI =16V, CI= 0.33F, CO=0.1F, unless otherwise specified)
Parameter

Output Voltage

Symbol

VO

Conditions

MC7810
Min.

Typ.

Max.

TJ =+25 C

9.6

10

10.4

5.0mA IO1.0A, PO 15W


VI = 12.5V to 25V

9.5

10

10.5

VI = 12.5V to 25V

10

200

VI = 13V to 25V

100

IO = 5mA to 1.5A

12

200

IO = 250mA to 750mA

400

Unit

V
mV

Line Regulation (Note1)

Regline

TJ =+25C

Load Regulation (Note1)

Regload

TJ =+25C

IQ

TJ =+25C

5.1

8.0

IO = 5mA to 1.0A

0.5

VI = 12.5V to 29V

1.0

IO = 5mA

-1

mV/C

VN

f = 10Hz to 100KHz, TA =+25 C

58

V/Vo

Ripple Rejection

RR

f = 120Hz
VI = 13V to 23V

56

71

dB

Dropout Voltage

VDrop

IO = 1A, TJ=+25 C

Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage

IQ
VO/T

mV
mA
mA

Output Resistance

rO

f = 1KHz

17

Short Circuit Current

ISC

VI = 35V, TA=+25 C

250

mA

Peak Current

IPK

TJ =+25 C

2.2

Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7812)


(Refer to test circuit ,0C < TJ < 125C, IO = 500mA, VI =19V, CI= 0.33F, CO=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

MC7812
Min.

Typ. Max.

Unit

TJ =+25 oC

11.5

12

12.5

5.0mA IO1.0A, PO15W


VI = 14.5V to 27V

11.4

12

12.6

VI = 14.5V to 30V

10

240

VI = 16V to 22V

3.0

120

IO = 5mA to 1.5A

11

240

IO = 250mA to 750mA

5.0

120

TJ =+25 oC

5.1

8.0

IO = 5mA to 1.0A

0.1

0.5

VI = 14.5V to 30V

0.5

1.0

IO = 5mA

-1

mV/ oC

VN

f = 10Hz to 100KHz, TA =+25 oC

76

V/Vo

Ripple Rejection

RR

f = 120Hz
VI = 15V to 25V

55

71

dB

Dropout Voltage

VDrop

IO = 1A, TJ=+25 oC

f = 1KHz

18

230

mA

2.2

Output Voltage

VO

TJ =+25 oC

Line Regulation (Note1)

Regline

Load Regulation (Note1)

Regload TJ =+25 oC

Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage

Output Resistance

IQ
IQ
VO/T

rO

Short Circuit Current

ISC

VI = 35V, TA

Peak Current

IPK

TJ = +25 oC

=+25 oC

V
mV
mV
mA
mA

Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7815)


(Refer to test circuit ,0C < TJ < 125C, IO = 500mA, VI =23V, CI= 0.33F, CO=0.1F, unless otherwise specified)
Parameter

Output Voltage

Symbol

VO

MC7815

Conditions

Min.

Typ.

Max.

TJ =+25 oC

14.4

15

15.6

5.0mA IO 1.0A, PO 15W


VI = 17.5V to 30V

14.25

15

15.75

VI = 17.5V to 30V

11

300

VI = 20V to 26V

150

IO = 5mA to 1.5A

12

300

IO = 250mA to
750mA

150

Unit

Line Regulation (Note1)

Regline

TJ =+25 oC

Load Regulation (Note1)

Regload

TJ =+25 oC

IQ

TJ =+25 oC

5.2

8.0

IO = 5mA to 1.0A

0.5

VI = 17.5V to 30V

1.0

-1

mV/ oC

90

V/Vo

Quiescent Current
Quiescent Current Change
Output Voltage Drift

IQ
VO/T

IO = 5mA
o

mV

mV
mA
mA

Output Noise Voltage

VN

f = 10Hz to 100KHz, TA =+25 C

Ripple Rejection

RR

f = 120Hz
VI = 18.5V to 28.5V

54

70

dB

Dropout Voltage

VDrop

IO = 1A, TJ=+25 oC

Output Resistance

rO

f = 1KHz

19

Short Circuit Current

ISC

VI = 35V, TA=+25 oC

250

mA

2.2

Peak Current

IPK

TJ =+25 C

Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7818)


(Refer to test circuit ,0C < TJ < 125C, IO = 500mA, VI =27V, CI= 0.33F, CO=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

MC7818
Min.

Typ. Max.

Unit

TJ =+25 oC

17.3

18

18.7

5.0mA IO 1.0A, PO 15W


VI = 21V to 33V

17.1

18

18.9

VI = 21V to 33V

15

360

VI = 24V to 30V

180

IO = 5mA to 1.5A

15

360

IO = 250mA to 750mA

5.0

180

TJ =+25 oC

5.2

8.0

IO = 5mA to 1.0A

0.5

VI = 21V to 33V

IO = 5mA

-1

mV/ oC

VN

f = 10Hz to 100KHz, TA =+25 oC

110

V/Vo

Ripple Rejection

RR

f = 120Hz
VI = 22V to 32V

53

69

dB

Dropout Voltage

VDrop

IO = 1A, TJ=+25 oC

f = 1KHz

22

250

mA

2.2

Output Voltage

VO

TJ =+25 oC

Line Regulation (Note1)

Regline

Load Regulation (Note1)

Regload TJ =+25 oC

Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage

Output Resistance

IQ
IQ
VO/T

rO

Short Circuit Current

ISC

VI = 35V, TA

Peak Current

IPK

TJ =+25 oC

=+25 oC

V
mV
mV
mA
mA

Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7824)


(Refer to test circuit ,0C < TJ < 125C, IO = 500mA, VI =33V, CI= 0.33F, CO=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions
TJ =+25 oC

Output Voltage

VO

MC7824
Min.

Typ. Max.

23

24

25

22.8

24

25.25

VI = 27V to 38V

17

480

VI = 30V to 36V

240

IO = 5mA to 1.5A

15

480

IO = 250mA to 750mA

5.0

240

5.0mA IO 1.0A, PO 15W


VI = 27V to 38V

Unit

Line Regulation (Note1)

Regline

TJ =+25 oC

Load Regulation (Note1)

Regload

TJ =+25 oC

IQ

TJ =+25 oC

5.2

8.0

IO = 5mA to 1.0A

0.1

0.5

VI = 27V to 38V

0.5

IO = 5mA

-1.5

mV/ oC

VN

f = 10Hz to 100KHz, TA =+25 oC

60

V/Vo

Ripple Rejection

RR

f = 120Hz
VI = 28V to 38V

50

67

dB

Dropout Voltage

VDrop

IO = 1A, TJ=+25 oC

f = 1KHz

28

230

mA

2.2

Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage

Output Resistance

IQ
VO/T

rO

Short Circuit Current

ISC

VI = 35V, TA=+25

Peak Current

IPK

TJ =+25 oC

oC

mV
mV
mA
mA

Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

10

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7805A)


(Refer to the test circuits. 0C < TJ < 125C, Io =1A, V I = 10V, C I=0.33F, C O=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

Min.

Typ.

Max.

4.9

5.1

4.8

5.2

VI = 7.5V to 25V
IO = 500mA

50

VI = 8V to 12V

50

VI= 7.3V to 20V

50

VI= 8V to 12V

TJ =+25
Output Voltage

Line Regulation (Note1)

VO

Regline

oC

IO = 5mA to 1A, PO 15W


VI = 7.5V to 20V

TJ =+25 oC

Load Regulation (Note1)

Quiescent Current
Quiescent Current
Change

Regload

IQ

1.5

25

TJ =+25 oC
IO = 5mA to 1.5A

100

IO = 5mA to 1A

100

IO = 250mA to 750mA

50

TJ =+25

oC

V/T

mV

mV

5.0

0.5

0.8

0.8

Io = 5mA

-0.8

mV/ oC

VI = 8 V to 25V, IO = 500mA
VI = 7.5V to 20V, TJ =+25

Output Voltage Drift

IO = 5mA to 1A
IQ

Unit

oC

mA
mA

Output Noise Voltage

VN

f = 10Hz to 100KHz
TA =+25 oC

10

V/Vo

Ripple Rejection

RR

f = 120Hz, IO = 500mA
VI = 8V to 18V

68

dB

Dropout Voltage

VDrop

IO = 1A, TJ =+25 oC

f = 1KHz

17

250

mA

2.2

Output Resistance

rO

Short Circuit Current

ISC

VI= 35V, TA

Peak Current

IPK

TJ= +25 oC

=+25 oC

Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

11

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7806A)


(Refer to the test circuits. 0C < TJ < 125C, Io =1A, V I =11V, C I=0.33F, C O=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

Min.

Typ.

Max.

5.58

6.12

5.76

6.24

VI= 8.6V to 25V


IO = 500mA

60

VI= 9V to 13V

60

VI= 8.3V to 21V

60

VI= 9V to 13V

TJ =+25
Output Voltage

Line Regulation (Note1)

VO

Regline

oC

IO = 5mA to 1A, PO 15W


VI = 8.6V to 21V

TJ =+25 oC

Load Regulation (Note1)

Quiescent Current

Regload

IQ

1.5

30

TJ =+25 oC
IO = 5mA to 1.5A

100

IO = 5mA to 1A

100

IO = 250mA to 750mA

5.0

50

TJ =+25

oC

IQ
V/T

mV

mV

4.3

0.5

VI = 9V to 25V, IO = 500mA

0.8

=+25 oC

0.8

IO = 5mA

-0.8

mV/ oC

VI= 8.5V to 21V, TJ


Output Voltage Drift

IO = 5mA to 1A
Quiescent Current Change

Unit

mA
mA

Output Noise Voltage

VN

f = 10Hz to 100KHz
TA =+25 oC

10

V/Vo

Ripple Rejection

RR

f = 120Hz, IO = 500mA
VI = 9V to 19V

65

dB

Dropout Voltage

VDrop

IO = 1A, TJ =+25 oC

f = 1KHz

17

250

mA

2.2

Output Resistance

rO

Short Circuit Current

ISC

VI= 35V, TA

Peak Current

IPK

TJ=+25 oC

=+25 oC

Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

12

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7808A)


(Refer to the test circuits. 0C < TJ < 125C, Io =1A, V I = 14V, C I=0.33F, C O=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

Min.

Typ.

Max.

TJ =+25 C

7.84

8.16

IO = 5mA to 1A, PO 15W


VI = 10.6V to 23V

7.7

8.3

80

Output Voltage

VO

VI= 10.6V to 25V


IO = 500mA
Line Regulation (Note1)

Regline

VI= 11V to 17V

80

VI= 10.4V to 23V

80

VI= 11V to 17V

40

TJ =+25 C
IO = 5mA to 1.5A

12

100

IO = 5mA to 1A

12

100

IO = 250mA to 750mA

50

TJ =+25 C

5.0

IO = 5mA to 1A

0.5

0.8

TJ =+25 oC

Unit
V

mV

Load Regulation (Note1)

Quiescent Current
Quiescent Current Change

Regload

IQ
IQ

VI = 11V to 25V, IO = 500mA


o

Output Voltage Drift

V/T

mV

mA
mA

VI= 10.6V to 23V, TJ =+25 C

0.8

IO = 5mA

-0.8

mV/ oC

Output Noise Voltage

VN

f = 10Hz to 100KHz
TA =+25 oC

10

V/Vo

Ripple Rejection

RR

f = 120Hz, IO = 500mA
VI = 11.5V to 21.5V

62

dB

Dropout Voltage

VDrop

IO = 1A, TJ =+25 oC

Output Resistance

rO

f = 1KHz

18

Short Circuit Current

ISC

VI= 35V, TA =+25 oC

250

mA

2.2

Peak Current

IPK

TJ=+25 C

Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

13

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7809A)


(Refer to the test circuits. 0C < TJ < 125C, Io =1A, V I = 15V, C I=0.33F, C O=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

Min.

Typ.

Max.

8.82

9.0

9.18

8.65

9.0

9.35

VI= 11.7V to 25V


IO = 500mA

90

VI= 12.5V to 19V

45

VI= 11.5V to 24V

90

VI= 12.5V to 19V

TJ
Output Voltage

Line Regulation (Note1)

VO

Regline

=+25C

IO = 5mA to 1A, PO15W


VI = 11.2V to 24V

TJ =+25C

Load Regulation (Note1)

Quiescent Current
Quiescent Current Change
Output Voltage Drift

Regload

IQ
IQ
V/T

45

TJ =+25C
IO = 5mA to 1.0A

12

100

IO = 5mA to 1.0A

12

100

IO = 250mA to 750mA

50

TJ

=+25 C

Unit
V

mV

mV

5.0

6.0

VI = 11.7V to 25V, TJ=+25 C

0.8

mA

VI = 12V to 25V, IO = 500mA

0.8

IO = 5mA to 1.0A

0.5

IO = 5mA

-1.0

mV/ C

mA

Output Noise Voltage

VN

f = 10Hz to 100KHz
TA =+25 C

10

V/Vo

Ripple Rejection

RR

f = 120Hz, IO = 500mA
VI = 12V to 22V

62

dB

Dropout Voltage

VDrop

IO = 1A, TJ =+25 C

2.0

f = 1KHz

17

250

mA

2.2

Output Resistance

rO

Short Circuit Current

ISC

VI= 35V, TA

Peak Current

IPK

TJ=+25C

=+25 C

Note:
1. Load and line regulation are specified at constant, junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

14

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7810A)


(Refer to the test circuits. 0C < TJ < 125C, Io =1A, V I = 16V, C I=0.33F, C O=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

Min.

Typ.

Max.

9.8

10

10.2

9.6

10

10.4

VI= 12.8V to 26V


IO = 500mA

100

VI= 13V to 20V

50

VI= 12.5V to 25V

100

VI= 13V to 20V

TJ
Output Voltage

Line Regulation (Note1)

VO

Regline

=+25C

IO = 5mA to 1A, PO 15W


VI =12.8V to 25V

TJ =+25 C

Load Regulation (Note1)

Quiescent Current
Quiescent Current Change
Output Voltage Drift

Regload

IQ
IQ
V/T

50

TJ =+25 C
IO = 5mA to 1.5A

12

100

IO = 5mA to 1.0A

12

100

IO = 250mA to 750mA

50

TJ

=+25 C

5.0

6.0

VI = 13V to 26V, TJ=+25 C

0.5

VI = 12.8V to 25V, IO = 500mA

0.8

IO = 5mA to 1.0A

0.5

IO = 5mA

-1.0

Unit
V

mV

mV

mA
mA
mV/ C
V/Vo

Output Noise Voltage

VN

f = 10Hz to 100KHz
TA =+25 C

10

Ripple Rejection

RR

f = 120Hz, IO = 500mA
VI = 14V to 24V

62

dB

Dropout Voltage

VDrop

IO = 1A, TJ =+25C

2.0

f = 1KHz

17

250

mA

2.2

Output Resistance

rO

Short Circuit Current

ISC

VI= 35V, TA

Peak Current

IPK

TJ=+25 C

=+25 C

Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

15

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7812A)


(Refer to the test circuits. 0C < TJ < 125C, Io =1A, V I = 19V, C I=0.33F, C O=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

Min.

Typ.

Max.

11.75

12

12.25

11.5

12

12.5

VI= 14.8V to 30V


IO = 500mA

10

120

VI= 16V to 22V

120

VI= 14.5V to 27V

10

120

VI= 16V to 22V

TJ
Output Voltage

Line Regulation (Note1)

VO

Regline

=+25 C

IO = 5mA to 1A, PO 15W


VI = 14.8V to 27V

TJ =+25 C

Load Regulation (Note1)

Quiescent Current
Quiescent Current Change
Output Voltage Drift

Regload

IQ
IQ
V/T

60

TJ =+25 C
IO = 5mA to 1.5A

12

100

IO = 5mA to 1.0A

12

100

IO = 250mA to 750mA

50

5.1

6.0

TJ

=+25C

Unit
V

mV

mV

mA

VI = 15V to 30V, TJ=+25 C

0.8

VI = 14V to 27V, IO = 500mA

0.8

IO = 5mA to 1.0A

0.5

IO = 5mA

-1.0

mV/C

mA

Output Noise Voltage

VN

f = 10Hz to 100KHz
TA =+25C

10

V/Vo

Ripple Rejection

RR

f = 120Hz, IO = 500mA
VI = 14V to 24V

60

dB

Dropout Voltage

VDrop

IO = 1A, TJ =+25C

2.0

f = 1KHz

18

250

mA

2.2

Output Resistance

rO

Short Circuit Current

ISC

VI= 35V, TA

Peak Current

IPK

TJ=+25 C

=+25 C

Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

16

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7815A)


(Refer to the test circuits. 0C < TJ < 125C, Io =1A, V I =23V, C I=0.33F, C O=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

Min.

Typ.

Max.

14.7

15

15.3

14.4

15

15.6

VI= 17.9V to 30V


IO = 500mA

10

150

VI= 20V to 26V

150

VI= 17.5V to 30V

11

150

VI= 20V to 26V

TJ
Output Voltage

Line Regulation (Note1)

VO

Regline

=+25 C

IO = 5mA to 1A, PO 15W


VI = 17.7V to 30V

TJ =+25C

Load Regulation (Note1)

Quiescent Current
Quiescent Current Change
Output Voltage Drift

Regload

IQ
IQ
V/T

75

TJ =+25 C
IO = 5mA to 1.5A

12

100

IO = 5mA to 1.0A

12

100

IO = 250mA to 750mA

50

TJ

=+25 C

Unit
V

mV

mV

5.2

6.0

VI = 17.5V to 30V, TJ =+25 C

0.8

mA

VI = 17.5V to 30V, IO = 500mA

0.8

IO = 5mA to 1.0A

0.5

IO = 5mA

-1.0

mV/C

mA

Output Noise Voltage

VN

f = 10Hz to 100KHz
TA =+25 C

10

V/Vo

Ripple Rejection

RR

f = 120Hz, IO = 500mA
VI = 18.5V to 28.5V

58

dB

Dropout Voltage

VDrop

IO = 1A, TJ =+25 C

2.0

f = 1KHz

19

250

mA

2.2

Output Resistance

rO

Short Circuit Current

ISC

VI= 35V, TA

Peak Current

IPK

TJ=+25C

=+25 C

Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

17

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7818A)


(Refer to the test circuits. 0C < TJ < 125C, Io =1A, V I = 27V, C I=0.33F, C O=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

Min.

Typ.

Max.

17.64

18

18.36

17.3

18

18.7

VI= 21V to 33V


IO = 500mA

15

180

VI= 21V to 33V

180

VI= 20.6V to 33V

15

180

VI= 24V to 30V

TJ
Output Voltage

Line Regulation (Note1)

VO

Regline

=+25 C

IO = 5mA to 1A, PO 15W


VI = 21V to 33V

TJ =+25 C

Load Regulation (Note1)

Quiescent Current
Quiescent Current Change
Output Voltage Drift

Regload

IQ
IQ
V/T

90

TJ =+25C
IO = 5mA to 1.5A

15

100

IO = 5mA to 1.0A

15

100

IO = 250mA to 750mA

50

TJ

=+25 C

5.2

6.0

VI = 21V to 33V, TJ=+25 C

0.8

VI = 21V to 33V, IO = 500mA

0.8

IO = 5mA to 1.0A

0.5

IO = 5mA

-1.0

Unit
V

mV

mV

mA
mA
mV/ C
V/Vo

Output Noise Voltage

VN

f = 10Hz to 100KHz
TA =+25C

10

Ripple Rejection

RR

f = 120Hz, IO = 500mA
VI = 22V to 32V

57

dB

Dropout Voltage

VDrop

IO = 1A, TJ =+25C

2.0

f = 1KHz

19

250

mA

2.2

Output Resistance

rO

Short Circuit Current

ISC

VI= 35V, TA

Peak Current

IPK

TJ=+25 C

=+25C

Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

18

MC78XX/LM78XX/MC78XXA

Electrical Characteristics (MC7824A)


(Refer to the test circuits. 0C < TJ < 125C, Io =1A, V I = 33V, C I=0.33F, C O=0.1F, unless otherwise specified)
Parameter

Symbol

Conditions

Min.

Typ.

Max.

23.5

24

24.5

23

24

25

VI= 27V to 38V


IO = 500mA

18

240

VI= 21V to 33V

240

VI= 26.7V to 38V

18

240

VI= 30V to 36V

TJ
Output Voltage

Line Regulation (Note1)

VO

Regline

=+25 C

IO = 5mA to 1A, PO 15W


VI = 27.3V to 38V

TJ =+25 C

Load Regulation (Note1)

Quiescent Current
Quiescent Current Change
Output Voltage Drift

Regload

IQ
IQ
V/T

120

TJ =+25 C
IO = 5mA to 1.5A

15

100

IO = 5mA to 1.0A

15

100

IO = 250mA to 750mA

50

TJ

=+25 C

Unit
V

mV

mV

5.2

6.0

VI = 27.3V to 38V, TJ =+25 C

0.8

mA

VI = 27.3V to 38V, IO = 500mA

0.8

IO = 5mA to 1.0A

0.5

IO = 5mA

-1.5

mV/ C

mA

Output Noise Voltage

VN

f = 10Hz to 100KHz
TA = 25 C

10

V/Vo

Ripple Rejection

RR

f = 120Hz, IO = 500mA
VI = 28V to 38V

54

dB

Dropout Voltage

VDrop

IO = 1A, TJ =+25 C

2.0

f = 1KHz

20

250

mA

2.2

Output Resistance

rO

Short Circuit Current

ISC

VI= 35V, TA

Peak Current

IPK

TJ=+25 C

=+25 C

Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
into account separately. Pulse testing with low duty is used.

19

MC78XX/LM78XX/MC78XXA

Typical Perfomance Characteristics

20

Figure 1. Quiescent Current

Figure 2. Peak Output Current

Figure 3. Output Voltage

Figure 4. Quiescent Current

MC78XX/LM78XX/MC78XXA

Typical Applications

MC78XX/LM78XX
Input

Output

Figure 5. DC Parameters

MC78XX/LM78XX
Input

Output

Figure 6. Load Regulation

MC78XX/LM78XX
Input

Output

Figure 7. Ripple Rejection

Input

MC78XX/LM78XX

Output

Figure 8. Fixed Output Regulator

21

MC78XX/LM78XX/MC78XXA

MC78XX/LM78XX

Input

Output

CI
Co

Figure 9. Constant Current Regulator


Notes:
(1) To specify an output voltage. substitute voltage value for "XX." A common ground is required between the input and the
Output voltage. The input voltage must remain typically 2.0V above the output voltage even during the low point on the input
ripple voltage.
(2) CI is required if regulator is located an appreciable distance from power Supply filter.
(3) CO improves stability and transient response.

Output

Input
MC78XX/LM78XX
CI
Co

I RI 5IQ
VO = VXX(1+R2/R1)+IQR2
Figure 10. Circuit for Increasing Output Voltage

Input

CI

Output

MC7805
LM7805

LM741
Co

IRI 5 IQ
VO = VXX(1+R2/R1)+IQR2
Figure 11. Adjustable Output Regulator (7 to 30V)

22

MC78XX/LM78XX/MC78XXA

Input

Output
MC78XX/LM78XX

Figure 12. High Current Voltage Regulator

Input

MC78XX/LM78XX

Output

Figure 13. High Output Current with Short Circuit Protection

MC78XX/LM78XX

LM741

Figure 14. Tracking Voltage Regulator

23

MC78XX/LM78XX/MC78XXA

MC7815

MC7915

Figure 15. Split Power Supply ( 15V-1A)

Output
Input

MC78XX/LM78XX

Figure 16. Negative Output Voltage Circuit

Output

Input

MC78XX/LM78XX

Figure 17. Switching Regulator

24

MC78XX/LM78XX/MC78XXA

Mechanical Dimensions
Package

TO-220
4.50 0.20
2.80 0.10
(3.00)

+0.10

1.30 0.05

18.95MAX.

(3.70)

3.60 0.10

15.90 0.20

1.30 0.10

(8.70)

(1.46)

9.20 0.20

(1.70)

9.90 0.20

(45
1.52 0.10

0.80 0.10
2.54TYP
[2.54 0.20]

10.08 0.30

(1.00)

13.08 0.20

1.27 0.10

+0.10

0.50 0.05

2.40 0.20

2.54TYP
[2.54 0.20]

10.00 0.20

25

MC78XX/LM78XX/MC78XXA

Mechancal Dimensions (Continued)


Package

D-PAK

MIN0.55

0.91 0.10

9.50 0.30

0.50 0.10

0.76 0.10

0.50 0.10
1.02 0.20

2.30TYP
[2.300.20]

(3.05)

(2XR0.25)

(0.10)

2.70 0.20

6.10 0.20

9.50 0.30

0.76 0.10

26

(1.00)

6.60 0.20
(5.34)
(5.04)
(1.50)

(0.90)

2.30 0.20

(0.70)

2.30TYP
[2.300.20]

(0.50)

2.30 0.10

0.89 0.10

MAX0.96

(4.34)

2.70 0.20

0.80 0.20

0.60 0.20

(0.50)

6.10 0.20

5.34 0.30

0.70 0.20

6.60 0.20

MC78XX/LM78XX/MC78XXA

Ordering Information
Product Number

Output Voltage Tolerance

Package

Operating Temperature

LM7805CT

4%

TO-220

0 ~ + 125C

Product Number

Output Voltage Tolerance

Package

Operating Temperature

MC7805CT
MC7806CT
MC7808CT
MC7809CT
MC7810CT

TO-220

MC7812CT
MC7815CT
MC7818CT
MC7824CT
MC7805CDT

4%

MC7806CDT
MC7808CDT
MC7809CDT
D-PAK

MC7810CDT

0 ~ + 125C

MC7812CDT
MC7815CDT
MC7818CDT
MC7824CDT
MC7805ACT
MC7806ACT
MC7808ACT
MC7809ACT
MC7810ACT

2%

TO-220

MC7812ACT
MC7815ACT
MC7818ACT
MC7824ACT

27

MC78XX/LM78XX/MC78XXA

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

2. A critical component in any component of a life support


device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com
6/1/01 0.0m 001
Stock#DSxxxxxxxx
2001 Fairchild Semiconductor Corporation

LM35/LM35A/LM35C/LM35CA/LM35D
Precision Centigrade Temperature Sensors
General Description
The LM35 series are precision integrated-circuit temperature sensors, whose output voltage is linearly proportional to
the Celsius (Centigrade) temperature. The LM35 thus has
an advantage over linear temperature sensors calibrated in
Kelvin, as the user is not required to subtract a large constant voltage from its output to obtain convenient Centigrade scaling. The LM35 does not require any external calibration or trimming to provide typical accuracies of g (/4 C
at room temperature and g */4 C over a full b55 to a 150 C
temperature range. Low cost is assured by trimming and
calibration at the wafer level. The LM35s low output impedance, linear output, and precise inherent calibration make
interfacing to readout or control circuitry especially easy. It
can be used with single power supplies, or with plus and
minus supplies. As it draws only 60 mA from its supply, it has
very low self-heating, less than 0.1 C in still air. The LM35 is
rated to operate over a b55 to a 150 C temperature
range, while the LM35C is rated for a b40 to a 110 C
range (b10 with improved accuracy). The LM35 series is

available packaged in hermetic TO-46 transistor packages,


while the LM35C, LM35CA, and LM35D are also available in
the plastic TO-92 transistor package. The LM35D is also
available in an 8-lead surface mount small outline package
and a plastic TO-202 package.

Features
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y

Calibrated directly in Celsius (Centigrade)


Linear a 10.0 mV/ C scale factor
0.5 C accuracy guaranteeable (at a 25 C)
Rated for full b55 to a 150 C range
Suitable for remote applications
Low cost due to wafer-level trimming
Operates from 4 to 30 volts
Less than 60 mA current drain
Low self-heating, 0.08 C in still air
Nonlinearity only g (/4 C typical
Low impedance output, 0.1 X for 1 mA load

Connection Diagrams
TO-92
Plastic Package

TO-46
Metal Can Package*

SO-8
Small Outline Molded Package

TL/H/5516 2
TL/H/55161

*Case is connected to negative pin (GND)

Order Number LM35H, LM35AH,


LM35CH, LM35CAH or LM35DH
See NS Package Number H03H
TO-202
Plastic Package

TL/H/5516 21

Order Number LM35CZ,


LM35CAZ or LM35DZ
See NS Package Number Z03A

Top View
N.C. e No Connection

Order Number LM35DM


See NS Package Number M08A

Typical Applications

TL/H/5516 3

FIGURE 1. Basic Centigrade


Temperature
Sensor ( a 2 C to a 150 C)

TL/H/5516 4

Choose R1 e b VS/50 mA
VOUT e a 1,500 mV at a 150 C
e a 250 mV at a 25 C

TL/H/551624

Order Number LM35DP


See NS Package Number P03A

eb 550 mV at b 55 C

FIGURE 2. Full-Range Centigrade


Temperature Sensor

TRI-STATE is a registered trademark of National Semiconductor Corporation.


C1995 National Semiconductor Corporation

TL/H/5516

RRD-B30M75/Printed in U. S. A.

LM35/LM35A/LM35C/LM35CA/LM35D
Precision Centigrade Temperature Sensors

December 1994

Absolute Maximum Ratings (Note 10)


SO Package (Note 12):

If Military/Aerospace specified devices are required,


please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage

Vapor Phase (60 seconds)

215 C

Infrared (15 seconds)


220 C
ESD Susceptibility (Note 11)
2500V
Specified Operating Temperature Range: TMIN to TMAX
(Note 2)
b 55 C to a 150 C
LM35, LM35A
b 40 C to a 110 C
LM35C, LM35CA
LM35D
0 C to a 100 C

a 35V to b 0.2V

a 6V to b 1.0V
Output Voltage
Output Current
10 mA
b 60 C to a 180 C
Storage Temp., TO-46 Package,
b 60 C to a 150 C
TO-92 Package,
b 65 C to a 150 C
SO-8 Package,
b 65 C to a 150 C
TO-202 Package,
Lead Temp.:
TO-46 Package, (Soldering, 10 seconds)
300 C
TO-92 Package, (Soldering, 10 seconds)
260 C
a 230 C
TO-202 Package, (Soldering, 10 seconds)

Electrical Characteristics (Note 1) (Note 6)


LM35A
Parameter

Accuracy
(Note 7)

Conditions

TA e a 25 C
TA eb10 C
TA e TMAX
TA e TMIN

Typical

Tested
Limit
(Note 4)

g 0.2

g 0.5

g 0.2

g 0.5

Design
Limit
(Note 5)

Units
(Max.)

g 0.4

g 1.0

g 0.4

g 0.4

g 1.0

g 0.4

g 1.5

g 0.15

g 0.3

a 10.0

a 9.9,
a 10.1

mV/ C

g 0.18

Sensor Gain
(Average Slope)

TMINsTAsTMAX

a 10.0

a 9.9,
a 10.1

Load Regulation
(Note 3) 0sILs1 mA

TA e a 25 C
TMINsTAsTMAX

g 0.4

g 1.0

g 0.5

Line Regulation
(Note 3)

TA e a 25 C
4VsVSs30V

g 0.02

Quiescent Current
(Note 9)

VS e a 5V, a 25 C
VS e a 5V
VS e a 30V, a 25 C
VS e a 30V

56
105
56.2
105.5

Temperature
Coefficient of
Quiescent Current

Tested
Limit
(Note 4)

g 0.3

TMINsTAsTMAX

4VsVSs30V, a 25 C
4VsVSs30V

Typical

C
C
C
C

g 0.3

Nonlinearity
(Note 8)

Change of
Quiescent Current
(Note 3)

LM35CA
Design
Limit
(Note 5)

g 0.01

g 0.35

g 0.4
g 3.0

g 0.5

g 0.1

g 0.02

g 0.05

g 0.01

133

56
91
56.2
91.5

2.0

0.2
0.5

a 0.39

a 0.5

a 2.0

0.2
0.5

Minimum Temperature
for Rated Accuracy

In circuit of
Figure 1 , IL e 0

a 1.5

Long Term Stability

TJ e TMAX, for
1000 hours

g 0.08

67
131
68
1.0

g 1.0
g 1.0

g 1.0
g 3.0

mV/mA
mV/mA

g 0.1

mV/V
mV/V

g 0.05

67

116

mA
mA
mA
mA

2.0

mA
mA

a 0.39

a 0.5

mA/ C

a 1.5

a 2.0

g 0.08

114
68
1.0

Note 1: Unless otherwise noted, these specifications apply: b 55 C s TJ s a 150 C for the LM35 and LM35A; b 40 s TJ s a 110 C for the LM35C and LM35CA; and
0 s TJ s a 100 C for the LM35D. VS e a 5Vdc and ILOAD e 50 mA, in the circuit of Figure 2. These specifications also apply from a 2 C to TMAX in the circuit of
Figure 1 . Specifications in boldface apply over the full rated temperature range.
Note 2: Thermal resistance of the TO-46 package is 400 C/W, junction to ambient, and 24 C/W junction to case. Thermal resistance of the TO-92 package is
180 C/W junction to ambient. Thermal resistance of the small outline molded package is 220 C/W junction to ambient. Thermal resistance of the TO-202 package
is 85 C/W junction to ambient. For additional thermal resistance information see table in the Applications section.

Electrical Characteristics (Note 1) (Note 6)

(Continued)
LM35

Parameter

Accuracy,
LM35, LM35C
(Note 7)

Conditions

TA e a 25 C
TA eb10 C
TA e TMAX
TA e TMIN

Typical

Tested
Limit
(Note 4)

g 0.4

g 1.0

g 0.5
g 0.8

g 1.5

g 0.8

g 1.5

Accuracy,
LM35D
(Note 7)

TA e a 25 C
TA e TMAX
TA e TMIN

Nonlinearity
(Note 8)

TMINsTAsTMAX

g 0.3

Sensor Gain
(Average Slope)

TMINsTAsTMAX

a 10.0

a 9.8,
a 10.2

Load Regulation
(Note 3) 0sILs1 mA

TA e a 25 C
TMINsTAsTMAX

g 0.4

g 2.0

g 0.5

Line Regulation
(Note 3)

TA e a 25 C
4VsVSs30V

g 0.02

Quiescent Current
(Note 9)

VS e a 5V, a 25 C
VS e a 5V
VS e a 30V, a 25 C
VS e a 30V

56
105
56.2
105.5

Change of
Quiescent Current
(Note 3)

4VsVSs30V, a 25 C
4VsVSs30V

Temperature
Coefficient of
Quiescent Current

LM35C, LM35D
Design
Limit
(Note 5)

Typical

Tested
Limit
(Note 4)

g 0.4

g 1.0

g 0.5

g 1.5

g 0.8

g 1.5

g 0.8
g 0.6

g 2.0
g 1.5

g 0.01

g 0.9

g 2.0
g 0.5

a 10.0

a 9.8,
a 10.2

mV/ C

g 0.4
g 0.5

g 0.2

g 0.02

g 0.01

161

56
91
56.2
91.5

3.0

0.2
0.5

a 0.39

a 0.7

a 2.0

0.2
0.5

Minimum Temperature
for Rated Accuracy

In circuit of
Figure 1 , IL e 0

a 1.5

Long Term Stability

TJ e TMAX, for
1000 hours

g 0.08

80
158
82
2.0

C
C
C
C

g 0.2

g 5.0
g 0.1

Units
(Max.)

C
C
C

g 0.9

g 0.5

Design
Limit
(Note 5)

g 2.0

g 2.0
g 5.0

mV/mA
mV/mA

g 0.2

mV/V
mV/V

g 0.1

80

141

mA
mA
mA
mA

3.0

mA
mA

a 0.39

a 0.7

mA/ C

a 1.5

a 2.0

g 0.08

138
82
2.0

Note 3: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be
computed by multiplying the internal dissipation by the thermal resistance.
Note 4: Tested Limits are guaranteed and 100% tested in production.
Note 5: Design Limits are guaranteed (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to
calculate outgoing quality levels.
Note 6: Specifications in boldface apply over the full rated temperature range.
Note 7: Accuracy is defined as the error between the output voltage and 10mv/ C times the devices case temperature, at specified conditions of voltage, current,
and temperature (expressed in C).
Note 8: Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the devices rated temperature
range.
Note 9: Quiescent current is defined in the circuit of Figure 1 .
Note 10: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when
operating the device beyond its rated operating conditions. See Note 1.
Note 11: Human body model, 100 pF discharged through a 1.5 kX resistor.
Note 12: See AN-450 Surface Mounting Methods and Their Effect on Product Reliability or the section titled Surface Mount found in a current National
Semiconductor Linear Data Book for other methods of soldering surface mount devices.

Typical Performance Characteristics


Thermal Resistance
Junction to Air

Thermal Time Constant

Thermal Response
in Still Air

Thermal Response in
Stirred Oil Bath

Minimum Supply
Voltage vs. Temperature

Quiescent Current
vs. Temperature
(In Circuit of Figure 1 .)

TL/H/5516 17

Quiescent Current
vs. Temperature
(In Circuit of Figure 2 .)

Accuracy vs. Temperature


(Guaranteed)

Accuracy vs. Temperature


(Guaranteed)

TL/H/5516 18

Noise Voltage

Start-Up Response

TL/H/5516 22

Applications
The TO-46 metal package can also be soldered to a metal
surface or pipe without damage. Of course, in that case the
Vb terminal of the circuit will be grounded to that metal.
Alternatively, the LM35 can be mounted inside a sealed-end
metal tube, and can then be dipped into a bath or screwed
into a threaded hole in a tank. As with any IC, the LM35 and
accompanying wiring and circuits must be kept insulated
and dry, to avoid leakage and corrosion. This is especially
true if the circuit may operate at cold temperatures where
condensation can occur. Printed-circuit coatings and varnishes such as Humiseal and epoxy paints or dips are often
used to insure that moisture cannot corrode the LM35 or its
connections.
These devices are sometimes soldered to a small lightweight heat fin, to decrease the thermal time constant and
speed up the response in slowly-moving air. On the other
hand, a small thermal mass may be added to the sensor, to
give the steadiest reading despite small deviations in the air
temperature.

The LM35 can be applied easily in the same way as other


integrated-circuit temperature sensors. It can be glued or
cemented to a surface and its temperature will be within
about 0.01 C of the surface temperature.
This presumes that the ambient air temperature is almost
the same as the surface temperature; if the air temperature
were much higher or lower than the surface temperature,
the actual temperature of the LM35 die would be at an intermediate temperature between the surface temperature and
the air temperature. This is expecially true for the TO-92
plastic package, where the copper leads are the principal
thermal path to carry heat into the device, so its temperature might be closer to the air temperature than to the surface temperature.
To minimize this problem, be sure that the wiring to the
LM35, as it leaves the device, is held at the same temperature as the surface of interest. The easiest way to do this is
to cover up these wires with a bead of epoxy which will
insure that the leads and wires are all at the same temperature as the surface, and that the LM35 dies temperature will
not be affected by the air temperature.

Temperature Rise of LM35 Due To Self-heating (Thermal Resistance)

Still air
Moving air
Still oil
Stirred oil
(Clamped to metal,
Infinite heat sink)

TO-46,
TO-46,
TO-92,
TO-92,
SO-8
SO-8
TO-202
TO-202 ***
no heat sink small heat fin* no heat sink small heat fin** no heat sink small heat fin** no heat sink small heat fin
100 C/W
180 C/W
140 C/W
220 C/W
110 C/W
85 C/W
60 C/W
400 C/W
40 C/W
90 C/W
70 C/W
105 C/W
90 C/W
25 C/W
40 C/W
100 C/W
40 C/W
90 C/W
70 C/W
100 C/W
30 C/W
45 C/W
40 C/W
50 C/W
(24 C/W)

(55 C/W)

(23 C/W)

* Wakefield type 201, or 1 disc of 0.020 sheet brass, soldered to case, or similar.
** TO-92 and SO-8 packages glued and leads soldered to 1 square of (/16 printed circuit board with 2 oz. foil or similar.

Typical Applications (Continued)

TL/H/5516 19

FIGURE 3. LM35 with Decoupling from Capacitive Load


TL/H/5516 20

FIGURE 4. LM35 with R-C Damper


capacitance because the capacitance forms a bypass from
ground to input, not on the output. However, as with any
linear circuit connected to wires in a hostile environment, its
performance can be affected adversely by intense electromagnetic sources such as relays, radio transmitters, motors
with arcing brushes, SCR transients, etc, as its wiring can
act as a receiving antenna and its internal junctions can act
as rectifiers. For best results in such cases, a bypass capacitor from VIN to ground and a series R-C damper such as
75X in series with 0.2 or 1 mF from output to ground are
often useful. These are shown in Figures 13, 14, and 16.

CAPACITIVE LOADS
Like most micropower circuits, the LM35 has a limited ability
to drive heavy capacitive loads. The LM35 by itself is able to
drive 50 pf without special precautions. If heavier loads are
anticipated, it is easy to isolate or decouple the load with a
resistor; see Figure 3 . Or you can improve the tolerance of
capacitance with a series R-C damper from output to
ground; see Figure 4 .
When the LM35 is applied with a 200X load resistor as
shown in Figure 5, 6, or 8, it is relatively immune to wiring

Typical Applications (Continued)

TL/H/5516 6

FIGURE 6. Two-Wire Remote Temperature Sensor


(Output Referred to Ground)
TL/H/55165

FIGURE 5. Two-Wire Remote Temperature Sensor


(Grounded Sensor)

TL/H/55167

FIGURE 7. Temperature Sensor, Single Supply, b55 to


a 150 C

TL/H/5516 8

FIGURE 8. Two-Wire Remote Temperature Sensor


(Output Referred to Ground)

TL/H/55169

FIGURE 9. 4-To-20 mA Current Source (0 C to a 100 C)

TL/H/5516 10

FIGURE 10. Fahrenheit Thermometer

Typical Applications (Continued)

TL/H/5516 11

FIGURE 11. Centigrade Thermometer (Analog Meter)

TL/H/5516 12

FIGURE 12. Expanded Scale Thermometer


(50 to 80 Fahrenheit, for Example Shown)

TL/H/5516 13

FIGURE 13. Temperature To Digital Converter (Serial Output) ( a 128 C Full Scale)

TL/H/5516 14

FIGURE 14. Temperature To Digital Converter (Parallel TRI-STATE Outputs for


Standard Data Bus to mP Interface) (128 C Full Scale)

Typical Applications (Continued)

TL/H/5516 16

* e 1% or 2% film resistor
-Trim RB for VB e 3.075V
-Trim RC for VC e 1.955V
-Trim RA for VA e 0.075V a 100mV/ C c Tambient
-Example, VA e 2.275V at 22 C

FIGURE 15. Bar-Graph Temperature Display (Dot Mode)

TL/H/5516 15

FIGURE 16. LM35 With Voltage-To-Frequency Converter And Isolated Output


(2 C to a 150 C; 20 Hz to 1500 Hz)

Block Diagram

TL/H/5516 23

Physical Dimensions inches (millimeters)

TO-46 Metal Can Package (H)


Order Number LM35H, LM35AH, LM35CH,
LM35CAH, or LM35DH
NS Package Number H03H

SO-8 Molded Small Outline Package (M)


Order Number LM35DM
NS Package Number M08A

10

Physical Dimensions inches (millimeters) (Continued)

Power Package TO-202 (P)


Order Number LM35DP
NS Package Number P03A

11

LM35/LM35A/LM35C/LM35CA/LM35D
Precision Centigrade Temperature Sensors

Physical Dimensions inches (millimeters) (Continued)

TO-92 Plastic Package (Z)


Order Number LM35CZ, LM35CAZ or LM35DZ
NS Package Number Z03A

LIFE SUPPORT POLICY


NATIONALS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
National Semiconductor
Corporation
2900 Semiconductor Drive
P.O. Box 58090
Santa Clara, CA 95052-8090
Tel: 1(800) 272-9959
TWX: (910) 339-9240

National Semiconductor
GmbH
Livry-Gargan-Str. 10
D-82256 F4urstenfeldbruck
Germany
Tel: (81-41) 35-0
Telex: 527649
Fax: (81-41) 35-1

National Semiconductor
Japan Ltd.
Sumitomo Chemical
Engineering Center
Bldg. 7F
1-7-1, Nakase, Mihama-Ku
Chiba-City,
Ciba Prefecture 261
Tel: (043) 299-2300
Fax: (043) 299-2500

2. A critical component is any component of a life


support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.

National Semiconductor
Hong Kong Ltd.
13th Floor, Straight Block,
Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
Hong Kong
Tel: (852) 2737-1600
Fax: (852) 2736-9960

National Semiconductores
Do Brazil Ltda.
Rue Deputado Lacorda Franco
120-3A
Sao Paulo-SP
Brazil 05418-000
Tel: (55-11) 212-5066
Telex: 391-1131931 NSBR BR
Fax: (55-11) 212-1181

National Semiconductor
(Australia) Pty, Ltd.
Building 16
Business Park Drive
Monash Business Park
Nottinghill, Melbourne
Victoria 3168 Australia
Tel: (3) 558-9999
Fax: (3) 558-9998

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

TDA2030
14W Hi-Fi AUDIO AMPLIFIER
DESCRIPTION
The TDA2030 is a monolithic integrated circuit in
Pentawatt package, intended for use as a low
frequency class AB amplifier. Typically it provides
14W output power (d = 0.5%) at 14V/4; at 14V
the guaranteed output power is 12W on a 4 load
and 8W on a 8 (DIN45500).
The TDA2030 provides high output current and has
very low harmonic and cross-over distortion.
Further the device incorporates an original (and
patented) short circuit protection system comprising an arrangement for automatically limiting the
dissipated power so as to keep the working point
of the output transistors within their safe operating
area. A conventional thermal shut-down system is
also included.

Pentawatt

ORDERING NUMBERS : TDA2030H


TDA2030V

ABSOLUTE MAXIMUM RATINGS


Symbol

Parameter

Value

Unit

18

Vs

Supply voltage

Vi

Input voltage

Vi

Differential input voltage

15

Io

Output peak current (internally limited)

3.5

Power dissipation at Tcase = 90C

20

-40 to 150

Ptot
Tstg, Tj

Stoprage and junction temperature

Vs

TYPICAL APPLICATION

March 1993

1/11

TDA2030
PIN CONNECTION (top view)

+VS
OUTPUT
-VS
INVERTING INPUT
NON INVERTING INPUT

TEST CIRCUIT

2/11

TDA2030
THERMAL DATA
Symbol
R th j-case

Parameter
Thermal resistance junction-case

Value

Unit

C/W

max

ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Vs = 14V, T amb = 25C unless otherwise
specified)
Symbol

Parameter

Vs

Supply voltage

Id

Quiescent drain current

Ib

Input bias current

Vos

Input offset voltage

Ios

Input offset current

Po

Output power

Test conditions

Distortion

Power Bandwidth
(-3 dB)

Ri

Input resistance (pin 1)

Gv

Voltage gain (open loop)

Gv

Voltage gain (closed loop)

eN

Input noise voltage

iN

Input noise current

SVR

Typ.

Max.

Unit

18

40

60

mA

0.2

20

mV

20

200

nA

Vs = 18V

d = 0.5%
Gv = 30 dB
f = 40 to 15,000 Hz
RL = 4
RL = 8
d = 10%
f = 1 KHz
RL = 4
RL = 8

Min.

12
8

14
9

W
W

18
11

W
W

Gv = 30 dB

Po = 0.1 to 12W
RL = 4
Gv = 30 dB
f = 40 to 15,000 Hz

0.2

0.5

Po = 0.1 to 8W
RL = 8
Gv = 30 dB
f = 40 to 15,000 Hz

0.1

0.5

Gv = 30 dB
Po = 12W

R L = 4
0.5

f = 1 kHz

29.5

B = 22 Hz to 22 KHz

Supply voltage rejection

RL = 4
Gv = 30 dB
Rg = 22 k
Vripple = 0.5 Veff
fripple = 100 Hz

Id

Drain current

Po = 14W
Po = W

Tj

Thermal shut-down junction


temperature

R L = 4
R L = 8

40

10 to 140,000

Hz

90

dB

30

30.5

dB

10

80

200

pA

50

dB

900
500

mA
mA

145

3/11

TDA2030
Figure 1. Output power vs.
supply voltage

Figure 2. Output power vs.


supply voltage

F ig u re 3 . Di stor ti on v s.
output power

Fi gur e 4. Di stortion v s.
output power

F ig ure 5. Di stortion vs.


output power

F ig u re 6 . Di stor ti on v s.
frequency

F igu r e 7. Di stor ti on vs .
frequency

4/11

Fig ure 8. Fre que nc y re sponse with different values


of the rolloff capacitor C8
(see fig. 13)

Figure 9. Quiescent current


vs. supply voltage

TDA2030
Figure 10. Supply voltage
rejection vs. voltage gain

Figure 11. Power dissipation and efficiency vs. output


power

Figure 12. Maximum power


dissipation vs. supply voltage (sine wave operation)

APPLICATION INFORMATION
Figure 13. Typical amplifier
with split power supply

Figure 14. P.C. board and component layout for


the circuit of fig. 13 (1 : 1 scale)

5/11

TDA2030
APPLICATION INFORMATION (continued)

Figure 15. Typical amplifier


with single power supply

Figure 16. P.C. board and component layout for


the circuit of fig. 15 (1 : 1 scale)

Figure 17. Bridge amplifier configuration with split power supply (Po = 28W, Vs = 14V)

6/11

TDA2030
PRACTICAL CONSIDERATIONS
Printed circuit board
The layout shown in Fig. 16 should be adopted by
the designers. If different layouts are used, the
ground points of input 1 and input 2 must be well
decoupled from the ground return of the output in
which a high current flows.
Assembly suggestion
No electrical isolation is needed between the

packageand the heatsinkwith singlesupply voltage


configuration.
Application suggestions
The recommended values of the components are
those shown on application circuit of fig. 13.
Different values can be used. The following table
can help the designer.

Component

Recomm.
value

R1

22 k

Closed loop gain


setting

Increase of gain

Decrease of gain (*)

R2

680

Closed loop gain


setting

Decrease of gain (*)

Increase of gain

R3

22 k

Non inverting input


biasing

Increase of input
impedance

Decrease of input
impedance

R4

Frequency stability

Danger of osccilat. at
high frequencies
with induct. loads

R5

3 R2

Upper frequency
cutoff

Poor high frequencies


attenuation

C1

1 F

Input DC
decoupling

Increase of low
frequencies cutoff

C2

22 F

Inverting DC
decoupling

Increase of low
frequencies cutoff

C3, C4

0.1 F

Supply voltage
bypass

Danger of
oscillation

C5, C6

100 F

Supply voltage
bypass

Danger of
oscillation

C7

0.22 F

Frequency stability

Danger of oscillation

1
2 B R1

Upper frequency
cutoff

C8

D1, D2

1N4001

Purpose

Larger than
recommended value

Smaller bandwidth

Smaller than
recommended value

Danger of
oscillation

Larger bandwidth

To protect the device against output voltage spikes

(*) Closed loop gain must be higher than 24dB

7/11

TDA2030
SHORT CIRCUIT PROTECTION
The TDA2030 has an original circuit which limits the
current of the output transistors. Fig. 18 shows that
the maximum output current is a function of the
collector emitter voltage; hence the output transistors work within their safe operating area (Fig. 2).
This function can therefore be considered as being

F i gu r e 1 8. Ma ximum
o u tpu t c urr en t v s .
voltage [VCEsat ] across
each output transistor

peak power limiting rather than simple current limiting.


It reduces the possibility that the device gets damaged during an accidental short circuit from AC
output to ground.

Figure 19. Safe operating area and


collector characteristics of the
protected power transistor

THERMAL SHUT-DOWN
The presence of a thermal limiting circuit offers the
following advantages:
1. An overload on the output (even if it is permanent), or an abovelimit ambient temperaturecan
be easily supported since the Tj cannot be
higher than 150C.
2. The heatsink can have a smaller factor of safety
compared with that of a conventional circuit.
There is no possibility of device damage due to
high junction temperature.If for any reason, the

8/11

junction temperature increases up to 150C, the


thermal shut-down simply reduces the power
dissipation at the current consumption.
The maximum allowable power dissipation depends upon the size of the external heatsink (i.e. its
thermal resistance); fig. 22 shows this dissipable
power as a function of ambient temperature for
different thermal resistance.

TDA2030
Figure 20. Output power and
d ra i n cu r ren t vs. c ase
temperature (RL = 4)

Figure 23. Example of heat-sink

Figure 21. Output power and


d r a i n c u rr en t vs. c as e
temperature (RL = 8)

F i gu r e
2 2.
Ma ximum
allowable power dissipation
vs. ambient temperature

Dimension : suggestion.
The following table shows the length that
the heatsink in fig.23 must have for several
values of Ptot and Rth.
Ptot (W)
Length of heatsink
(mm)
Rth of heatsink
( C/W)

12

60

40

30

4.2

6.2

8.3

9/11

TDA2030
PENTAWATT PACKAGE MECHANICAL DATA
mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

4.8

0.189

1.37

0.054

2.4

2.8

0.094

0.110

D1

1.2

1.35

0.047

0.053

0.35

0.55

0.014

0.022

0.8

1.05

0.031

0.041

F1

1.4

3.4

G1

6.8

H2
H3

0.039

0.055

0.126

0.134

0.142

0.260

0.268

0.276

10.4
10.05

0.409

10.4

0.396

0.409

17.85

0.703

L1

15.75

0.620

L2

21.4

0.843

L3

22.5

0.886

L5

2.6

0.102

0.118

L6

15.1

15.8

0.594

0.622

L7

6.6

0.236

0.260

4.5

M1

0.177

Dia

0.157

3.65

3.85

0.144

0.152

D1

M1

L1

L2

G
L7
L6

F
H2

F1

Dia.

G1

L3

H3

L5

10/11

MAX.

TDA2030

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain
- Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.

11/11

LM3914
Dot/Bar Display Driver
General Description
The LM3914 is a monolithic integrated circuit that senses
analog voltage levels and drives 10 LEDs, providing a linear
analog display. A single pin changes the display from a moving dot to a bar graph. Current drive to the LEDs is regulated
and programmable, eliminating the need for resistors. This
feature is one that allows operation of the whole system from
less than 3V.
The circuit contains its own adjustable reference and accurate 10-step voltage divider. The low-bias-current input
buffer accepts signals down to ground, or V, yet needs no
protection against inputs of 35V above or below ground. The
buffer drives 10 individual comparators referenced to the
precision divider. Indication non-linearity can thus be held
typically to 12%, even over a wide temperature range.
Versatility was designed into the LM3914 so that controller,
visual alarm, and expanded scale functions are easily added
on to the display system. The circuit can drive LEDs of many
colors, or low-current incandescent lamps. Many LM3914s
can be chained to form displays of 20 to over 100 segments. Both ends of the voltage divider are externally available so that 2 drivers can be made into a zero-center meter.
The LM3914 is very easy to apply as an analog meter circuit.
A 1.2V full-scale meter requires only 1 resistor and a single
3V to 15V supply in addition to the 10 display LEDs. If the 1
resistor is a pot, it becomes the LED brightness control. The
simplified block diagram illustrates this extremely simple external circuitry.
When in the dot mode, there is a small amount of overlap or
fade (about 1 mV) between segments. This assures that at
no time will all LEDs be OFF, and thus any ambiguous display is avoided. Various novel displays are possible.

2000 National Semiconductor Corporation

DS007970

Much of the display flexibility derives from the fact that all
outputs are individual, DC regulated currents. Various effects
can be achieved by modulating these currents. The individual outputs can drive a transistor as well as a LED at the
same time, so controller functions including staging control
can be performed. The LM3914 can also act as a programmer, or sequencer.
The LM3914 is rated for operation from 0C to +70C. The
LM3914N-1 is available in an 18-lead molded (N) package.
The following typical application illustrates adjusting of the
reference to a desired value, and proper grounding for accurate operation, and avoiding oscillations.

Features
Drives LEDs, LCDs or vacuum fluorescents
Bar or dot display mode externally selectable by user
Expandable to displays of 100 steps
Internal voltage reference from 1.2V to 12V
Operates with single supply of less than 3V
Inputs operate down to ground
Output current programmable from 2 mA to 30 mA
No multiplex switching or interaction between outputs
Input withstands 35V without damage or false outputs
LED driver outputs are current regulated,
open-collectors
n Outputs can interface with TTL or CMOS logic
n The internal 10-step divider is floating and can be
referenced to a wide range of voltages

n
n
n
n
n
n
n
n
n
n

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LM3914 Dot/Bar Display Driver

January 2000

LM3914

Typical Applications
0V to 5V Bar Graph Meter

DS007970-1

Note: Grounding method is typical of all uses. The 2.2 F tantalum or 10 F aluminum electrolytic capacitor is needed if leads to the LED supply are 6" or
longer.

www.national.com

Reference Load Current


10 mA
Storage Temperature Range
55C to +150C
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
260C
Plastic Chip Carrier Package
Vapor Phase (60 seconds)
215C
Infrared (15 seconds)
220C
See AN-450 Surface Mounting Methods and Their Effect
on Product Reliability for other methods of soldering
surface mount devices.

If Military/Aerospace specified devices are required,


please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Dissipation (Note 6)
Molded DIP (N)
Supply Voltage
Voltage on Output Drivers
Input Signal Overvoltage (Note 4)
Divider Voltage

1365 mW
25V
25V
35V
100 mV to V+

Electrical Characteristics (Notes 2, 4)


Parameter

Conditions (Note 2)

Min

Typ

Max

Units

10

mV

15

mV

COMPARATOR

Gain (ILED/VIN)

0V VRLO = VRHI 12V,


ILED = 1 mA
0V VRLO = VRHI 12V,
ILED = 1 mA
IL(REF) = 2 mA, ILED = 10 mA

Input Bias Current (at Pin 5)

0V VIN V+ 1.5V

Input Signal Overvoltage

No Change in Display

Offset Voltage, Buffer and First


Comparator
Offset Voltage, Buffer and Any Other
Comparator

8
25

35

mA/mV
100

nA

35

VOLTAGE-DIVIDER
Divider Resistance

Total, Pin 6 to 4

Accuracy

(Note 3)

12

17

0.5

1.28

1.34

VOLTAGE REFERENCE
Output Voltage

0.1 mA IL(REF) 4 mA,


V+ = VLED = 5V

Line Regulation

3V V+ 18V

0.01

0.03

%/V

Load Regulation

0.1 mA IL(REF) 4 mA,


V+ = VLED = 5V

0.4

Output Voltage Change with


Temperature

0C TA +70C, IL(REF) = 1 mA,


V+ = 5V

1.2

Adjust Pin Current

75

120

A
mA

OUTPUT DRIVERS
LED Current
LED Current Difference (Between
Largest and Smallest LED Currents)
LED Current Regulation
Dropout Voltage
Saturation Voltage

V+ = VLED = 5V, IL(REF) = 1 mA


ILED = 2 mA
VLED = 5V

ILED = 20 mA
ILED = 2 mA
ILED = 20 mA

2V VLED 17V

ILED(ON) = 20 mA, VLED = 5V,


ILED = 2 mA
ILED = 2.0 mA, IL(REF) = 0.4 mA

Output Leakage, Each Collector

(Bar Mode) (Note 5)

Output Leakage

(Dot Mode)
(Note 5)

13
0.4

1.2

0.1

0.25

0.15

Pins 1018
Pin 1

10
0.12

60

mA
mA

1.5

0.4

0.1

10

0.1

10

150

450

2.4

4.2

mA

6.1

9.2

mA

SUPPLY CURRENT
Standby Supply Current
(All Outputs Off)

V+ = 5V,
IL(REF) = 0.2 mA
V+ = 20V,
IL(REF) = 1.0 mA

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.

www.national.com

LM3914

Absolute Maximum Ratings (Note 1)

LM3914

Electrical Characteristics (Notes 2, 4)

(Continued)

Note 2: Unless otherwise stated, all specifications apply with the following conditions:
3 VDC V+ 20 VDC

VREF, VRHI, VRLO (V+ 1.5V)

3 VDC VLED V+
0V VIN V+ 1.5V
0.015V VRLO 12 VDC
TA = +25C, IL(REF) = 0.2 mA, VLED = 3.0V, pin 9 connected to pin 3 (Bar Mode).
0.015V VRHI 12 VDC
For higher power dissipations, pulse testing is used.
Note 3: Accuracy is measured referred to +10.000 VDC at pin 6, with 0.000 VDC at pin 4. At lower full-scale voltages, buffer and comparator offset voltage may add
significant error.
Note 4: Pin 5 input current must be limited to 3 mA. The addition of a 39k resistor in series with pin 5 allows 100V signals without damage.
Note 5: Bar mode results when pin 9 is within 20 mV of V+. Dot mode results when pin 9 is pulled at least 200 mV below V+ or left open circuit. LED No. 10 (pin
10 output current) is disabled if pin 9 is pulled 0.9V or more below VLED.
Note 6: The maximum junction temperature of the LM3914 is 100C. Devices must be derated for operation at elevated temperatures. Junction to ambient thermal
resistance is 55C/W for the molded DIP (N package).

LED Current Regulation: The change in output current


over the specified range of LED supply voltage (VLED) as
measured at the current source outputs. As the forward voltage of an LED does not change significantly with a small
change in forward current, this is equivalent to changing the
voltage at the LED anodes by the same amount.
Line Regulation: The average change in reference output
voltage over the specified range of supply voltage (V+).
Load Regulation: The change in reference output voltage
(VREF) over the specified range of load current (IL(REF)).
Offset Voltage: The differential input voltage which must be
applied to each comparator to bias the output in the linear region. Most significant error when the voltage across the internal voltage divider is small. Specified and tested with pin
6 voltage (VRHI) equal to pin 4 voltage (VRLO).

Definition of Terms
Accuracy: The difference between the observed threshold
voltage and the ideal threshold voltage for each comparator.
Specified and tested with 10V across the internal voltage divider so that resistor ratio matching error predominates over
comparator offset voltage.
Adjust Pin Current: Current flowing out of the reference adjust pin when the reference amplifier is in the linear region.
Comparator Gain: The ratio of the change in output current
(ILED) to the change in input voltage (VIN) required to produce it for a comparator in the linear region.
Dropout Voltage: The voltage measured at the current
source outputs required to make the output current fall by
10%.
Input Bias Current: Current flowing out of the signal input
when the input buffer is in the linear region.

Typical Performance Characteristics


Supply Current vs
Temperature

Operating Input Bias


Current vs Temperature

DS007970-2

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Reference Voltage vs
Temperature

DS007970-20

DS007970-21

Reference Adjust Pin


Current vs Temperature

LM3914

Typical Performance Characteristics

(Continued)

LED Current-Regulation
Dropout

DS007970-22

LED Driver Saturation


Voltage

DS007970-23
DS007970-24

Input Current Beyond


Signal Range (Pin 5)

LED Current vs
Reference Loading

LED Driver Current


Regulation

DS007970-25
DS007970-26

Total Divider Resistance


vs Temperature

Common-Mode Limits

DS007970-27

Output Characteristics

DS007970-29

DS007970-30

DS007970-28

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LM3914

Block Diagram

(Showing Simplest Application)

DS007970-3

www.national.com

MODE PIN USE

The simplifed LM3914 block diagram is to give the general


idea of the circuits operation. A high input impedance buffer
operates with signals from ground to 12V, and is protected
against reverse and overvoltage signals. The signal is then
applied to a series of 10 comparators; each of which is biased to a different comparison level by the resistor string.
In the example illustrated, the resistor string is connected to
the internal 1.25V reference voltage. In this case, for each
125 mV that the input signal increases, a comparator will
switch on another indicating LED. This resistor divider can
be connected between any 2 voltages, providing that they
are 1.5V below V+ and no less than V. If an expanded scale
meter display is desired, the total divider voltage can be as
little as 200 mV. Expanded-scale meter displays are more
accurate and the segments light uniformly only if bar mode is
used. At 50 mV or more per step, dot mode is usable.

Pin 9, the Mode Select input controls chaining of multiple


LM3914s, and controls bar or dot mode operation. The following tabulation shows the basic ways of using this input.
Other more complex uses will be illustrated in the applications.
Bar Graph Display: Wire Mode Select (pin 9) directly to pin
3 (V+ pin).
Dot Display, Single LM3914 Driver: Leave the Mode Select
pin open circuit.
Dot Display, 20 or More LEDs: Connect pin 9 of the first
driver in the series (i.e., the one with the lowest input voltage
comparison points) to pin 1 of the next higher LM3914 driver.
Continue connecting pin 9 of lower input drivers to pin 1 of
higher input drivers for 30, 40, or more LED displays. The
last LM3914 driver in the chain will have pin 9 wired to pin 11.
All previous drivers should have a 20k resistor in parallel with
LED No. 9 (pin 11 to VLED).

INTERNAL VOLTAGE REFERENCE


The reference is designed to be adjustable and develops a
nominal 1.25V between the REF OUT (pin 7) and REF ADJ
(pin 8) terminals. The reference voltage is impressed across
program resistor R1 and, since the voltage is constant, a
constant current I1 then flows through the output set resistor
R2 giving an output voltage of:

Mode Pin Functional Description


This pin actually performs two functions. Refer to the simplified block diagram below.
Block Diagram of Mode Pin Description

DS007970-4

Since the 120 A current (max) from the adjust terminal represents an error term, the reference was designed to minimize changes of this current with V+ and load changes.

DS007970-5

*High for bar

DOT OR BAR MODE SELECTION


The voltage at pin 9 is sensed by comparator C1, nominally
referenced to (V+ 100 mV). The chip is in bar mode when
pin 9 is above this level; otherwise its in dot mode. The comparator is designed so that pin 9 can be left open circuit for
dot mode.
Taking into account comparator gain and variation in the
100 mV reference level, pin 9 should be no more than 20 mV
below V+ for bar mode and more than 200 mV below V+ (or
open circuit) for dot mode. In most applications, pin 9 is either open (dot mode) or tied to V+ (bar mode). In bar mode,
pin 9 should be connected directly to pin 3. Large currents
drawn from the power supply (LED current, for example)
should not share this path so that large IR drops are avoided.

CURRENT PROGRAMMING
A feature not completely illustrated by the block diagram is
the LED brightness control. The current drawn out of the reference voltage pin (pin 7) determines LED current. Approximately 10 times this current will be drawn through each
lighted LED, and this current will be relatively constant despite supply voltage and temperature changes. Current
drawn by the internal 10-resistor divider, as well as by the external current and voltage-setting divider should be included
in calculating LED drive current. The ability to modulate LED
brightness with time, or in proportion to input voltage and
other signals can lead to a number of novel displays or ways
of indicating input overvoltages, alarms, etc.

DOT MODE CARRY


In order for the display to make sense when multiple
LM3914s are cascaded in dot mode, special circuitry has
been included to shut off LED No. 10 of the first device when
7

www.national.com

LM3914

Functional Description

LM3914

Mode Pin Functional Description

LEDs OFF) is 1.6 mA (2.5 mA max). However, any reference


loading adds 4 times that current drain to the V+ (pin 3) supply input. For example, an LM3914 with a 1 mA reference pin
load (1.3k), would supply almost 10 mA to every LED while
drawing only 10 mA from its V+ pin supply. At full-scale, the
IC is typically drawing less than 10% of the current supplied
to the display.

(Continued)
LED No. 1 of the second device comes on. The connection
for cascading in dot mode has already been described and is
depicted below.
As long as the input signal voltage is below the threshold of
the second LM3914, LED No. 11 is off. Pin 9 of LM3914
No. 1 thus sees effectively an open circuit so the chip is in
dot mode. As soon as the input voltage reaches the threshold of LED No. 11, pin 9 of LM3914 No. 1 is pulled an LED
drop (1.5V or more) below VLED. This condition is sensed by
comparator C2, referenced 600 mV below VLED. This forces
the output of C2 low, which shuts off output transistor Q2, extinguishing LED No. 10.
VLED is sensed via the 20k resistor connected to pin 11. The
very small current (less than 100 A) that is diverted from
LED No. 9 does not noticeably affect its intensity.
An auxiliary current source at pin 1 keeps at least 100 A
flowing through LED No. 11 even if the input voltage rises
high enough to extinguish the LED. This ensures that pin 9 of
LM3914 No. 1 is held low enough to force LED No. 10 off
when any higher LED is illuminated. While 100 A does not
normally produce significant LED illumination, it may be noticeable when using high-efficiency LEDs in a dark environment. If this is bothersome, the simple cure is to shunt LED
No. 11 with a 10k resistor. The 1V IR drop is more than the
900 mV worst case required to hold off LED No. 10 yet small
enough that LED No. 11 does not conduct significantly.

The display driver does not have built-in hysteresis so that


the display does not jump instantly from one LED to the next.
Under rapidly changing signal conditions, this cuts down
high frequency noise and often an annoying flicker. An overlap is built in so that at no time between segments are all
LEDs completely OFF in the dot mode. Generally 1 LED
fades in while the other fades out over a mV or more of
range (Note 3). The change may be much more rapid between LED No. 10 of one device and LED No. 1 of a second
device chained to the first.
The LM3914 features individually current regulated LED
driver transistors. Further internal circuitry detects when any
driver transistor goes into saturation, and prevents other circuitry from drawing excess current. This results in the ability
of the LM3914 to drive and regulate LEDs powered from a
pulsating DC power source, i.e., largely unfiltered. (Due to
possible oscillations at low voltages a nominal bypass capacitor consisting of a 2.2 F solid tantalum connected from
the pulsating LED supply to pin 2 of the LM3914 is recommended.) This ability to operate with low or fluctuating voltages also allows the display driver to interface with logic circuitry, opto-coupled solid-state relays, and low-current
incandescent lamps.

OTHER DEVICE CHARACTERISTICS


The LM3914 is relatively low-powered itself, and since any
number of LEDs can be powered from about 3V, it is a very
efficient display driver. Typical standby supply current (all
Cascading LM3914s in Dot Mode

DS007970-6

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LM3914

Typical Applications
Zero-Center Meter, 20-Segment

DS007970-7

www.national.com

LM3914

Typical Applications

(Continued)
Expanded Scale Meter, Dot or Bar

DS007970-8

*This application illustrates that the LED supply needs practically no filtering

Calibration: With a precision meter between pins 4 and 6 adjust R1 for voltage VD of 1.20V. Apply 4.94V to pin 5, and adjust R4 until LED No. 5 just lights.
The adjustments are non-interacting.

Application Example:
Grading 5V Regulators
Highest No.
LED on

Color

VOUT(MIN)

10

Red

5.54

Red

5.42

Yellow

5.30

Green

5.18

Green

5.06

5V
5

Green

4.94

Green

4.82

Yellow

4.7

Red

4.58

Red

4.46

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10

LM3914

Typical Applications

(Continued)
Exclamation Point Display

DS007970-9

LEDs light up as illustrated with the upper lit LED indicating the actual input voltage. The display appears to increase resolution and provides an analog
indication of overrange.

Indicator and Alarm, Full-Scale Changes Display from Dot to Bar

DS007970-10

*The input to the Dot-Bar Switch may be taken from cathodes of other LEDs. Display will change to bar as soon as the LED so selected begins to light.

11

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LM3914

Typical Applications

(Continued)
Bar Display with Alarm Flasher

DS007970-11

Full-scale causes the full bar display to flash. If the junction of R1 and C1 is connected to a different LED cathode, the display will flash when that LED lights,
and at any higher input signal.

Adding Hysteresis (Single Supply, Bar Mode Only)

DS007970-12

Hysteresis is 0.5 mV to 1 mV

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12

LM3914

Typical Applications

(Continued)

Operating with a High Voltage Supply (Dot Mode Only)

DS007970-13

The LED currents are approximately 10 mA, and the LM3914 outputs operate in saturation for minimum dissipation.
*This point is partially regulated and decreases in voltage with temperature. Voltage requirements of the LM3914 also decrease with temperature.

13

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LM3914

Typical Applications

(Continued)
20-Segment Meter with Mode Switch

DS007970-14

*The exact wiring arrangement of this schematic shows the need for Mode Select (pin 9) to sense the V+ voltage exactly as it appears on pin 3.

Programs LEDs to 10 mA

tively high value resistors. These high-impedance ends


should be bypassed to pin 2 with at least a 0.001 F capacitor, or up to 0.1 F in noisy environments.
Power dissipation, especially in bar mode should be given
consideration. For example, with a 5V supply and all LEDs
programmed to 20 mA the driver will dissipate over 600 mW.
In this case a 7.5 resistor in series with the LED supply will
cut device heating in half. The negative end of the resistor
should be bypassed with a 2.2 F solid tantalum capacitor to
pin 2 of the LM3914.
Turning OFF of most of the internal current sources is accomplished by pulling positive on the reference with a current source or resistance supplying 100 A or so. Alternately,
the input signal can be gated OFF with a transistor switch.
Other special features and applications characteristics will
be illustrated in the following applications schematics. Notes
have been added in many cases, attempting to cover any
special procedures or unusual characteristics of these applications. A special section called Application Tips for the
LM3914 Adjustable Reference has been included with
these schematics.

Application Hints
Three of the most commonly needed precautions for using
the LM3914 are shown in the first typical application drawing
showing a 0V5V bar graph meter. The most difficult problem occurs when large LED currents are being drawn, especially in bar graph mode. These currents flowing out of the
ground pin cause voltage drops in external wiring, and thus
errors and oscillations. Bringing the return wires from signal
sources, reference ground and bottom of the resistor string
(as illustrated) to a single point very near pin 2 is the best solution.
Long wires from VLED to LED anode common can cause oscillations. Depending on the severity of the problem 0.05 F
to 2.2 F decoupling capacitors from LED anode common to
pin 2 will damp the circuit. If LED anode line wiring is inaccessible, often similar decoupling from pin 1 to pin 2 will be
sufficient.
If LED turn ON seems slow (bar mode) or several LEDs light
(dot mode), oscillation or excessive noise is usually the problem. In cases where proper wiring and bypassing fail to stop
oscillations, V+ voltage at pin 3 is usually below suggested
limits. Expanded scale meter applications may have one or
both ends of the internal voltage divider terminated at rela-

www.national.com

14

(Continued)
Greatly Expanded Scale (Bar Mode Only)

APPLICATION TIPS FOR THE LM3914 ADJUSTABLE


REFERENCE
GREATLY EXPANDED SCALE (BAR MODE ONLY)
Placing the LM3914 internal resistor divider in parallel with a
section ( 230) of a stable, low resistance divider greatly
reduces voltage changes due to IC resistor value changes
with temperature. Voltage V1 should be trimmed to 1.1V first
by use of R2. Then the voltage V2 across the IC divider string
can be adjusted to 200 mV, using R5 without affecting V1.
LED current will be approximately 10 mA.
NON-INTERACTING ADJUSTMENTS FOR EXPANDED
SCALE METER (4.5V to 5V, Bar or Dot Mode)
This arrangement allows independent adjustment of LED
brightness regardless of meter span and zero adjustments.
First, V1 is adjusted to 5V, using R2. Then the span (voltage
across R4) can be adjusted to exactly 0.5V using R6 without
affecting the previous adjustment.
R9 programs LED currents within a range of 2.2 mA to 20 mA
after the above settings are made.

DS007970-15

ADJUSTING LINEARITY OF SEVERAL STACKED


DIVIDERS
Three internal voltage dividers are shown connected in series to provide a 30-step display. If the resulting analog meter
is to be accurate and linear the voltage on each divider must
be adjusted, preferably without affecting any other adjustments. To do this, adjust R2 first, so that the voltage across
R5 is exactly 1V. Then the voltages across R3 and R4 can
be independently adjusted by shunting each with selected
resistors of 6 k or higher resistance. This is possible because the reference of LM3914 No. 3 is acting as a constant
current source.
The references associated with LM3914s No. 1 and No. 2
should have their Ref Adj pins (pin 8) wired to ground, and
their Ref Outputs loaded by a 620 resistor to ground. This
makes available similar 20 mA current outputs to all the
LEDs in the system.
If an independent LED brightness control is desired (as in
the previous application), a unity gain buffer, such as the
LM310, should be placed between pin 7 and R1, similar to
the previous application.

15

www.national.com

LM3914

Application Hints

LM3914

Application Hints

(Continued)

Non-Interacting Adjustments for Expanded Scale Meter (4.5V to 5V, Bar or Dot Mode)

DS007970-16

Other Applications

Adjusting Linearity of Several Stacked Dividers

DS007970-17

www.national.com

16

Slow fade bar or dot display (doubles resolution)

Electronic meter-relay display could be circle or


semi-circle

Moving hole display indicator LED is dark, rest of bar


lit

Drives vacuum-fluorescent and LCDs using added passive parts

20-step meter with single pot brightness control


10-step (or multiples) programmer
Multi-step or staging controller
Combined controller and process deviation meter
Direction and rate indicator (to add to DVMs)
Exclamation point display for power saving
Graduations can be added to dot displays. Dimly light every other LED using a resistor to ground

LM3914

Connection Diagrams
Plastic Chip Carrier Package

Dual-in-Line Package

DS007970-18

Top View
Order Number LM3914V
See NS Package Number V20A

DS007970-19

Top View
Order Number LM3914N-1
See NS Package Number NA18A
Order Number LM3914N *
See NS Package Number N18A
* Discontinued, Life Time Buy date 12/20/99

17

www.national.com

LM3914

Physical Dimensions

inches (millimeters) unless otherwise noted

Note: Unless otherwise specified.


1. Standard Lead Finish:
200 microinches /5.08 micrometer minimum
lead/tin 37/63 or 15/85 on alloy 42 or equivalent or copper
2. Reference JEDEC registration MS-001, Variation AC, dated May 1993.
Dual-In-Line Package (N)
Order Number LM3914N-1
NS Package Number NA18A

Plastic Chip Carrier Package (V)


Order Number LM3914V
NS Package Number V20A

www.national.com

18

LM3914 Dot/Bar Display Driver

Physical Dimensions

inches (millimeters) unless otherwise noted (Continued)

Dual-In-Line Package (N)


Order Number LM3914N *
NS Package Number N18A
* Discontinued, Life Time Buy date 12/20/99

LIFE SUPPORT POLICY


NATIONALS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
National Semiconductor
Corporation
Americas
Tel: 1-800-272-9959
Fax: 1-800-737-7018
Email: support@nsc.com
www.national.com

National Semiconductor
Europe
Fax: +49 (0) 1 80-530 85 86
Email: europe.support@nsc.com
Deutsch Tel: +49 (0) 1 80-530 85 85
English Tel: +49 (0) 1 80-532 78 32
Franais Tel: +49 (0) 1 80-532 93 58
Italiano Tel: +49 (0) 1 80-534 16 80

2. A critical component is any component of a life


support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.

National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: sea.support@nsc.com

National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

Order this document


by 4N25/D

4N25
4N26
4N27
4N28

GlobalOptoisolator

The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix V must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing

Solid State Relays

STANDARD THRU HOLE

MAXIMUM RATINGS (TA = 25C unless otherwise noted)


Rating

Symbol

Value

Unit

Reverse Voltage

VR

Volts

Forward Current Continuous

IF

60

mA

LED Power Dissipation @ TA = 25C


with Negligible Power in Output Detector
Derate above 25C

PD

120

mW

1.41

mW/C

INPUT LED

OUTPUT TRANSISTOR
CollectorEmitter Voltage

VCEO

30

Volts

EmitterCollector Voltage
CollectorBase Voltage

VECO

Volts

VCBO

70

Volts

Collector Current Continuous

IC

150

mA

Detector Power Dissipation @ TA = 25C


with Negligible Power in Input LED
Derate above 25C

PD

150

mW

1.76

mW/C

VISO

7500

Vac(pk)

Total Device Power Dissipation @ TA = 25C


Derate above 25C

PD

250
2.94

mW
mW/C

Ambient Operating Temperature Range

TA

55 to +100

Tstg

55 to +150

TL

260

TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)

Storage Temperature Range


Soldering Temperature (10 sec, 1/16 from case)

1. Isolation surge voltage is an internal device dielectric breakdown rating.


1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

SCHEMATIC

4
PIN 1.
2.
3.
4.
5.
6.

LED ANODE
LED CATHODE
N.C.
EMITTER
COLLECTOR
BASE

4N25 4N26 4N27 4N28


ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)(1)
Symbol

Min

Typ(1)

Max

Unit

VF

1.15
1.3
1.05

1.5

Volts

Reverse Leakage Current (VR = 3 V)

IR

100

Capacitance (V = 0 V, f = 1 MHz)

CJ

18

pF

Characteristic
INPUT LED
Forward Voltage (IF = 10 mA)

TA = 25C
TA = 55C
TA = 100C

OUTPUT TRANSISTOR
CollectorEmitter Dark Current
(VCE = 10 V, TA = 25C

4N25,26,27
4N28

ICEO

1
1

50
100

nA

(VCE = 10 V, TA = 100C)

All Devices

ICEO

ICBO

0.2

nA

CollectorEmitter Breakdown Voltage (IC = 1 mA)

V(BR)CEO

30

45

Volts

CollectorBase Breakdown Voltage (IC = 100 A)

V(BR)CBO

70

100

Volts

EmitterCollector Breakdown Voltage (IE = 100 A)

V(BR)ECO

7.8

Volts

DC Current Gain (IC = 2 mA, VCE = 5 V)

hFE

500

CollectorEmitter Capacitance (f = 1 MHz, VCE = 0)

CCE

pF

CollectorBase Capacitance (f = 1 MHz, VCB = 0)

CCB

19

pF

EmitterBase Capacitance (f = 1 MHz, VEB = 0)

CEB

pF

2 (20)
1 (10)

7 (70)
5 (50)

VCE(sat)

0.15

0.5

Volts

TurnOn Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)

ton

2.8

TurnOff Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)

toff

4.5

tr

1.2

CollectorBase Dark Current (VCB = 10 V)

COUPLED
IC (CTR)(2)

Output Collector Current (IF = 10 mA, VCE = 10 V)


4N25,26
4N27,28
CollectorEmitter Saturation Voltage (IC = 2 mA, IF = 50 mA)

Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)


Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)

mA (%)

tf

1.3

Isolation Voltage (f = 60 Hz, t = 1 sec)(4)

VISO

7500

Vac(pk)

Isolation Resistance (V = 500 V)(4)

RISO

1011

Isolation Capacitance (V = 0 V, f = 1 MHz)(4)

CISO

0.2

pF

1.
2.
3.
4.

Always design to the specified minimum/maximum electrical limits (where applicable).


Current Transfer Ratio (CTR) = IC/IF x 100%.
For test circuit setup and waveforms, refer to Figure 11.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

4N25 4N26 4N27 4N28

VF, FORWARD VOLTAGE (VOLTS)

2
PULSE ONLY
PULSE OR DC
1.8

1.6
1.4
TA = 55C
1.2

25C
100C

1
1

10
100
IF, LED FORWARD CURRENT (mA)

1000

I C , OUTPUT COLLECTOR CURRENT (NORMALIZED)

TYPICAL CHARACTERISTICS
10
NORMALIZED TO:
IF = 10 mA
1

0.1

0.01

IF = 10 mA

20
16
5 mA
12
8
2 mA

1 mA
0

10

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

50

10
7
5

NORMALIZED TO TA = 25C

2
1
0.7
0.5
0.2
0.1
60

40

20

20

40

60

80

100

TA, AMBIENT TEMPERATURE (C)

Figure 4. Output Current versus Ambient Temperature

100
NORMALIZED TO:
VCE = 10 V
TA = 25C

100

50

VCC = 10 V

20
t, TIME (s)

ICEO, COLLECTOREMITTER DARK CURRENT


(NORMALIZED)

Figure 3. Collector Current versus


CollectorEmitter Voltage

I C , OUTPUT COLLECTOR CURRENT (NORMALIZED)

IC , COLLECTOR CURRENT (mA)

24

1
2
5
10
20
IF, LED INPUT CURRENT (mA)

Figure 2. Output Current versus Input Current

Figure 1. LED Forward Voltage versus Forward Current

28

0.5

10
VCE = 30 V

10

RL = 1000

RL = 100

0.1
20

40

60

80

100

TA, AMBIENT TEMPERATURE (C)

Figure 5. Dark Current versus Ambient Temperature

1
0.1

tf

10 V
0

{
tf

tr

tr
0.2

0.5

1
2
5
10
20
IF, LED INPUT CURRENT (mA)

Figure 6. Rise and Fall Times


(Typical Values)

50

100

4N25 4N26 4N27 4N28


100
70
50

VCC = 10 V

t off, TURN OFF TIME ( s)

t on, TURN ON TIME ( s)

100
70
50
RL = 1000

20
10
7
5

100
10

VCC = 10 V

20
RL = 1000
10
7
5

100
10

2
1
0.1

0.2

0.5 0.7 1

5 7 10

20

1
0.1

50 70 100

0.2

0.5 0.7 1

IF, LED INPUT CURRENT (mA)

Figure 7. TurnOn Switching Times


(Typical Values)

5 7 10

20

50 70 100

Figure 8. TurnOff Switching Times


(Typical Values)
20

4
IF = 0

IB = 7 A

18

6 A

16

5 A
4 A

3 A
1

10

12

14

16

C, CAPACITANCE (pF)

I , TYPICAL COLLECTOR CURRENT (mA)


C

IF, LED INPUT CURRENT (mA)

12
10

CEB

8
6
4

1 A

20

f = 1 MHz

CCB

14

2 A

18

CLED

CCE

0
0.05 0.1

0.2

0.5

10

20

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

Figure 9. DC Current Gain (Detector Only)

Figure 10. Capacitances versus Voltage

TEST CIRCUIT

WAVEFORMS
INPUT PULSE

VCC = 10 V
IF = 10 mA

RL = 100
10%

INPUT

OUTPUT

OUTPUT PULSE
90%
tr
ton

Figure 11. Switching Time Test Circuit and Waveforms

tf
toff

50

4N25 4N26 4N27 4N28


PACKAGE DIMENSIONS

A
6

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.

B
1

F 4 PL

SEATING
PLANE

J 6 PL
0.13 (0.005)

G
M

E 6 PL
D 6 PL
0.13 (0.005)

T A

T B

DIM
A
B
C
D
E
F
G
J
K
L
M
N

INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.300 BSC
0
15
0.015
0.100

STYLE 1:
PIN 1.
2.
3.
4.
5.
6.

MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
7.62 BSC
0
15
0.38
2.54

ANODE
CATHODE
NC
EMITTER
COLLECTOR
BASE

THRU HOLE

A
6

B
1

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

F 4 PL

H
C

T
G

J
K 6 PL

E 6 PL

0.13 (0.005)

D 6 PL
0.13 (0.005)

T A

SEATING
PLANE

T B

SURFACE MOUNT

DIM
A
B
C
D
E
F
G
H
J
K
L
S

INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.020
0.025
0.008
0.012
0.006
0.035
0.320 BSC
0.332
0.390

MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.51
0.63
0.20
0.30
0.16
0.88
8.13 BSC
8.43
9.90

*Consult factory for leadform


option availability

4N25 4N26 4N27 4N28

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.

A
6

B
1

F 4 PL

C
T
SEATING
PLANE

DIM
A
B
C
D
E
F
G
J
K
L
N

INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.400
0.425
0.015
0.040

MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
10.16
10.80
0.38
1.02

D 6 PL
E 6 PL

0.13 (0.005)

T A

0.4" LEAD SPACING

*Consult factory for leadform


option availability

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

www.fairchildsemi.com

2. A critical component in any component of a life support


device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

2000 Fairchild Semiconductor Corporation

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