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Application
Power switching
Outline
TO-220AB
2 3
1. Base
2. Collector
(Flange)
3. Emitter
ID
1.5 k
(Typ)
130
(Typ)
3
2SD1127(K)
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
VCBO
120
VCEO
120
VEBO
Collector current
IC
10
IC(peak)
15
50
150
55 to +150
10
PC*
Junction temperature
Tj
Storage temperature
Tstg
ID *
1. Value at TC = 25C.
Symbol
Min
Typ
Max
Unit
Test conditions
VCEO(sus)
120
V(BR)EBO
IE = 200 mA, IC = 0
ICBO
100
VCB = 120 V, IE = 0
hFE
1000
VCE(sat)
1.5
VBE(sat)
2.0
Turn on time
ton
0.8
toff
8.0
Note:
1. Pulse test.
VCE = 2 V, IC = 10 A*
IC = 10 A, IB = 25 mA*
IC = 5 A, IB1 = IB2 = 10 mA
2SD1127(K)
Maximum Collector Dissipation Curve
Collector power dissipation Pc (W)
60
40
20
50
100
Case temperature TC (C)
150
iC (peak)
1
m
s
10
ot
ot
ra
sh
pe
1.0
sh
IC (max)
3
PW
PW
10
tio
(T C
=
0.3
25
Ta = 25C
0.1
0.03
10
30
100
300
Collector to emitter voltage VCE (V)
10
TC = 25C
2.0
1.5
1.0
0.8
0.7
0.6
0.5 mA
IB = 0
1
2
3
4
Collector to emitter voltage VCE (V)
2SD1127(K)
DC Current Transfer Ratio
vs. Collector Current
30,000
VCE = 2 V
Pulse
10,000
3,000
TC
5C
=7
25 25
1,000
300
100
30
0.3
1.0
3
10
Collector current IC (A)
30
3
VBE (sat)
1.0
VCE (sat)
200
400
0.3
0.1
0.03
0.01
0.3
TC = 25C
Pulse
1.0
3
10
Collector current IC (A)
30
2SD1127(K)
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207