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2N5551- MMBT5551
tm
MMBT5551
2N5551
3
2
1 SOT-23
Marking: 3S
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
160
VCBO
Collector-Base Voltage
180
VEBO
Emitter-Base Voltage
6.0
IC
600
mA
TJ, Tstg
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Max
Parameter
2N5551
*MMBT5551
350
2.8
PD
625
5.0
RJA
83.3
RJA
200
Units
mW
mW/C
C/W
357
C/W
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
IC = 1.0mA, IB = 0
160
V(BR)CBO
IC = 100A, IE = 0
180
V(BR)EBO
IE = 10uA, IC = 0
6.0
ICBO
VCB = 120V, IE = 0
VCB = 120V, IE = 0, Ta = 100C
50
50
nA
A
IEBO
VEB = 4.0V, IC = 0
50
nA
On Characteristics
hFE
DC Current Gain
80
80
30
250
VCE(sat)
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.15
0.20
V
V
VBE(sat)
Base-Emitter On Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
1.0
1.0
V
V
300
MHz
6.0
pF
20
pF
Cobo
Output Capacitance
Cibo
Input Capacitance
Hfe
NF
Noise Figure
100
50
250
8.0
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1
Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)
dB
Electrical Characteristics
250
0.5
125 C
200
150
0.3
25 C
100
25 C
0.2
-40 C
50
VCE = 5V
0
0.1
0.2
0.5
10
20
50
- 40 C
0.0
100
100
1.0
o
1.0
- 40 C
0.8
- 40 C
0.8
25 C
0.6
0.6
125 C
0.4
25 C
o
125 C
0.4
0.2
0.2
10
100
VCE = 5V
0.0
0.1
0.0
1
200
10
100
50
30
VCB = 100V
f = 1.0 MHz
25
CAPACITANCE (pF)
10
125 C
0.1
= 10
0.4
10
20
15
C ib
10
1
25
50
75
100
TA - AMBIE NT TEMP ERATURE ( C)
0
0.1
125
C cb
1
10
100
(Continued)
Between Emitter-Base
I C = 1.0 mA
240
220
200
180
160
0.1
10
100
1000
RESISTANCE (k )
700
600
500
TO-92
SOT-23
400
300
200
100
0
25
50
75
100
TEMPERATURE ( o C)
125
150
vs Collector Current
16
FREG = 20 MHz
V CE = 10V
12
10
I C - COLLECTOR CURRENT (mA)
50