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Zhao
Y. C. Shin1
e-mail: shin@purdue.edu
Center for Laser-Based Manufacturing,
School of Mechanical Engineering,
Purdue University,
West Lafayette, IN 47907
Introduction
@Te 1 @
@Te
@ 2 Te
ke r
2 GTe Ti S
Ce
r @r
@t
@r
@z
Ci
2.1 Energy Transfer Inside the Target. For ultrashort lasermaterial interactions, the electron and lattice temperatures are different before the thermodynamic equilibrium is reached, and
hence the energy transfer inside the target can be described by the
well-known two-temperature model [10,11]
@ne
@t
(3)
(4)
where J~ is the electric current density including both drift and diffusion terms
~ eDe rne
J~ ene lE
(5)
In above equation, l and De are the electron mobility and diffu~ is the electric field generated because
sivity, respectively, and E
of breaking of local neutrality inside the target. In Eq. (4), Ge and
Re represent the electron generation and loss term, respectively.
The term Ge is given by [1214]
Ge
1
Corresponding author.
Manuscript received April 29, 2013; final manuscript received October 18, 2013;
published online November 18, 2013. Editor: Y. Lawrence Yao.
(2)
where Ce ; Ci ; Te ; Ti are the volumetric heat capacities and temperatures of electrons and lattice, respectively, ke is the electron thermal conductivity, G is the electron-lattice coupling term, all the
values of which are obtained from QEOS model, and S is the laser
absorption term.
Theoretical Model
@Ti
GTe Ti
@t
(1)
1 RaI 1 R2 bI 2
na
dne
hv
2hv
na ni
(6)
The term Re denotes the three photon Auger recombination process given by [15]
Re cn3e
(7)
Experimental Setup
Experiments were carried out to measure ablation depth of silicon at different laser intensities. The experimental setup is shown
in Fig. 2. A regeneratively amplified Ti:sapphire laser (Spitfire,
Spectra Physics) was used, which has the characteristics of 100 fs
pulse duration, the central wavelength of 800 nm and the repetition rate of 1 kHz. The pulse energy could be adjusted from 5 lJ
to 1 mJ by a half waveplate and a polarizer. A 10 microscope
objective was used to focus the laser beam onto the target for ablation. A commercial grade silicon wafer was used as the target, and
it was irradiated by a single pulse for every spot. The ablation
depth and crater shape were measured by an optical surface profilometer (ADE MicroXAM).
(10)
(11)
(12)
Fig. 2
Experimental setup
2=3
q0
qc
I
L l ln H
Ith
(15)
(13)
where Tc , qc , and q0 are the critical temperature (7925 K for silicon [22]), critical density (0.76 g/cm3 for silicon [22]), and normal
density (2.33 g/cm3 for silicon [22]), respectively. Therefore, the
separation temperature of silicon is calculated to be 16,724 K.
Figure 3 shows the spatial distribution of the lattice temperature
inside the target at 10 ps during the ablation process. The laser fluence is 2.5 J/cm2, with the wavelength of 800 nm, and the pulse
duration of 100 fs. With this result, the crater geometry and the
ablation depth can be determined by the locations where the maximum local temperature exceeds the separation temperature.
Figures 4(a) and 4(b) present the predicted crater geometry at the
fluence of 2.5 J/cm2 and 20 J/cm2, respectively. The experimental
measurements by the optical surface profilometer are also shown
for comparison. It can be seen that the simulation results predict
the crater shape very well compared with the experimental results,
except for some fluctuations on the crater wall and the ridges at
the edge.
Figure 5 represents the calculation of the ablation depth from
low to high laser fluence, validated by the experimental measurement. The ablation depth shows logarithmic dependence on the
laser pulse fluence, and two distinct regimes have been experimentally observed for both metals [1,4] and semiconductors
[23,24]. The dependence of the ablation rate could be expressed
based on the experimental data by two different logarithmic
functions [4,23]
I
(14)
L d ln M
Ith
Journal of Manufacturing Science and Engineering
Fig. 6 Ablation efficiency versus laser fluence. Laser pulse duration: 100 fs, wavelength: 800 nm.
Conclusions
Acknowledgment
The authors wish to gratefully acknowledge the financial support provided for this study by the National Science Foundation
(Grant No: 0853890-CBET and CMMI-1030786).
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