TPC8401

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (UMOSII)

TPC8401
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PCs

Unit: mm

Low drainsource ON resistance

: P Channel RDS (ON) = 27 m (typ.)
N Channel RDS (ON) = 14 m (typ.)
High forward transfer admittance
: P Channel |Yfs| = 7 S (typ.)
N Channel |Yfs| = 8 S (typ.)
Low leakage current
: P Channel IDSS = 10 A (VDS = 30 V)
N Channel IDSS = 10 A (VDS = 30 V)
Enhancementmode
: P Channel Vth = 0.8~ 2.0 V (VDS = 10 V, ID = 1mA)
N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1mA)

Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating
P Channel N Channel

Unit

Drain-source voltage

VDSS

30

30

Drain-gate voltage (RGS = 20 k)

VDGR

30

30

Gate-source voltage

VGSS

20

20

Drain current

DC

(Note 1)

ID

4.5

Pulse

(Note 1)

IDP

18

24

PD (1)

1.5

1.5

PD (2)

1.0

1.0

PD (1)

0.75

0.75

PD (2)

0.45

0.45

Drain power Single-device operation

(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2a) dual operation (Note 3b)
Drain power Single-device operation
(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2b) dual operation (Note 3b)

JEDEC

JEITA

TOSHIBA

2-6J1E

Weight: 0.080 g (typ.)

A

Circuit Configuration
W

26.3
(Note 4a)

46.8
(Note 4b)

Single pulse avalanche energy

EAS

Avalanche current

IAR

Repetitive avalanche energy

Single-device value at operation
(Note 2a, 3b, 5)

EAR

0.10

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

55~150

4.5

mJ
A

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.

2002-05-17

TPC8401
Thermal Characteristics
Characteristics
Single-device operation
(Note 3a)

Thermal resistance, channel to ambient

(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)

Thermal resistance, channel to ambient

(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)

Symbol

Max

Rth (ch-a) (1)

83.3

Rth (ch-a) (2)

125

Unit

C/W
Rth (ch-a) (1)

167

Rth (ch-a) (2)

278

Marking

TPC8401

Type

Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2:
a) Device mounted on a glass-epoxy board (a)

b) Device mounted on a glass-epoxy board (b)

FR-4
25.4 25.4 0.8
(unit: mm)

FR-4
25.4 25.4 0.8
(unit: mm)

(a)

(b)

Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4:
a) VDD = 24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = 4.5 A
b) VDD = 24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = 6.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: on lower left of the marking indicates Pin 1.
* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)

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TPC8401
P-ch
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 16 V, VDS = 0 V

10

Drain cutOFF current

IDSS

VDS = 30 V, VGS = 0 V

10

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

V (BR) DSX

ID = 10 mA, VGS = 20 V

15

Vth

VDS = 10 V, ID = 1 mA

0.8

2.0

RDS (ON)

VGS = 4 V, ID = 2.2 A

51

65

RDS (ON)

VGS = 10 V, ID = 2.2 A

25

35

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.2 A

3.5

Input capacitance

Ciss

970

Reverse transfer capacitance

Crss

180

Output capacitance

Coss

370

tr

17

ton

20

tf

75

toff

160

Qg

28

12

Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance

Rise time
TurnON time

VDS = 10 V, VGS = 0 V, f = 1 MHz

V
V
m
S

pF

ns

Switching time
Fall time

TurnOFF time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge 1

Qgs1

Gatedrain (miller) charge

Qgd

VDD 24 V, VGS = 10 V, ID = 4.5 A

nC

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristics
Drain reverse
current

Pulse (Note 1)

Forward voltage (diode)

Symbol

Test Condition

Min

Typ.

Max

Unit

IDRP

18

1.2

VDSF

IDR = 4.5 A, VGS = 0 V

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TPC8401
N-ch
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 16 V, VDS = 0 V

10

Drain cutOFF current

IDSS

VDS = 30 V, VGS = 0 V

10

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

V (BR) DSX

ID = 10 mA, VGS = 20 V

15

VDS = 10 V, ID = 1 mA

0.8

2.5

RDS (ON)

VGS = 4 V, ID = 3 A

21

32

RDS (ON)

VGS = 10 V, ID = 3 A

14

21

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 3 A

Input capacitance

Ciss

1700

260

Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance

Vth

VDS = 10 V, VGS = 0 V, f = 1 MHz

Reverse transfer capacitance

Crss

Output capacitance

Coss

380

tr

10

ton

20

Rise time

TurnON time

V
V
m
S

pF

ns

Switching time
Fall time

TurnOFF time
Total gate charge (Gatesource
plus gatedrain)

tf

35

toff

120

Qg

40

28

12

Gatesource charge 1

Qgs1

Gatedrain (miller) charge

Qgd

VDD 24 V, VGS = 10 V, ID = 6 A

nC

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristics
Drain reverse
current

Pulse (Note 1)

Forward voltage (diode)

Symbol

Test Condition

Min

Typ.

Max

Unit

IDRP

24

1.2

VDSF

IDR = 6 A, VGS = 0 V

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TPC8401
P-ch

DRAIN POWER DISSIPATION PD

(W)

PD Ta
2.0

1.5

(1)

(2)
1.0
(3)

0.5

0
0

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)

(NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY
BOARD (b)
(NOTE 2b)
(3) SINGLE-DEVICE OPERATION
(NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL
OPERATION
(NOTE 3b)
t = 10 s

(4)

50

100

150

200

AMBIENT TEMPERATURE Ta (C)

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TPC8401
P-ch

DRAIN POWER DISSIPATION PD

(W)

PD Ta
2.0

1.5

(1)

(2)
1.0
(3)

0.5

0
0

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)

(NOTE 2a)
(1) SINGLE-DEVICE OPERATION
(NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY
BOARD (b)
(NOTE 2b)
(3) SINGLE-DEVICE OPERATION
(NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL
OPERATION
(NOTE 3b)
t = 10 s

(4)

50

100

150

200

AMBIENT TEMPERATURE Ta (C)

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TPC8401
P-ch

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TPC8401
N-ch

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TPC8401
N-ch

DRAIN POWER DISSIPATION PD

(W)

PD Ta
2.0

1.5

(1)

(2)
1.0
(3)

0.5

0
0

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)

(NOTE 2a)
(1) SINGLE-DEVICE OPERATION
(NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY
BOARD (b)
(NOTE 2b)
(3) SINGLE-DEVICE OPERATION
(NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL
OPERATION
(NOTE 3b)
t = 10 s

(4)

50

100

150

200

AMBIENT TEMPERATURE Ta (C)

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TPC8401
N-ch

10

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TPC8401

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.

11

2002-05-17