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Semiconductor materials
Introduction of p-n junction
Forward-biased and Reversed-biased p-n junction
IV characteristics of forward-biased and reversedbiased p-n junction
Learning Outcome
At the end of this topic, you should be able to:
1. Describe the types of semiconductor materials
2. Explain how the p-n junction is formed
3. Explain the operation of forward-biased and reversed
bias of p-n junctions
4. Extract the information from i-v characteristic of p-n
junction
Revision on chemistry
Atomic structure
When protons = electrons, the atom is
electrically neutral; otherwise it is an ion
and has a net positive or negative
charge.
The number of protons determines
the type of atoms
Energy Levels
Electrons are always in motion.
They move around the nucleus within their
specific shells. Each within the path has a specific
amount of energy.
To jump from one path to another, an electron
needs to receive specific amount
of energy measured in
electron volt (eV).
1 eV = 1.6 x 10-19 Joules
Energy Band
When these atoms combines, the electron of atoms
interact with one another energy level for single
atom form band of energy or energy band.
The amount of energy separating the bands
determines the electrical characteristics of the
material.
Insulator
Semiconductor
Conductor
Trivial Questions
Gallium has 31 protons. How many
electrons does it have in each shell?
[Hint: 2n2]
INTRODUCTION
Semiconductor
Most important material in the study of
electronics.
The ability to conduct electricity is intermediate.
At room temperature -> not a good conductor.
As temperature , the conductivity as the
resistivity .
e.g. Si (resistivity = 1.69x10-6 /cm), Ge
(All these tetravalent material i.e. they have 4
valence electrons -> covalent bond between
atoms)
GaAs
Intrinsic Semiconductor
For pure semiconductor, very few unattached
electrons available at room temperature.
As temperature , kinetic energy and number of
free electrons . Resistivity .
Semiconductor has a negative temperature
coefficient.
Doping process
Doping is process of adding an impurity
(concentration: 1 part/10 million) to the
semiconductor as such it will be a better
conductor.
form extrinsic semiconductor
Impurity material is known as dopant. 2 types:
Acceptor to form P type material
Donor to form N type material
N-type material
When pentavalent atoms (e.g. phosphorus,
arsenic and antimony) are used as dopants,
there will be many free electrons available for
conductivity.
this dopant is known as donor
This extrinsic semiconductor
is known as N-type because
it contains many electrons
which are negatively charged.
Majority carriers are electrons. Minority carriers are holes.
P-type material
When trivalent atoms (e.g. boron, aluminum
and gallium) are used as dopants, there will be
many holes available for conductivity by
attracting free electron.
this dopant is known as acceptor
This extrinsic semiconductor
is known as P-type because
it contains many holes
which are positively charged.
Majority carriers are holes. Minority carriers are electrons.
Drift
Occurs when an electric field is applied across a piece of Si
Gives rise to drift current
Drift current and applied electric field -> represents one form of
Ohms Law
Initially, the depletion region will shrink as the voltage increases. Once the
voltage value reaches the barrier potential, an appreciable current will flow
through the p-n junction.
Vk
Vk = 0.7V for Silicon,
0.3 V for Germanium
Shockleys Equation
This equation is used to describe the p-n junction
characteristic.
ID = IS e
VD nVT
kT
VT =
q
Reference
Abraham Pallas, Electronic Devices and
Circuit Analysis, Delmar Publishers, 1986
Robert L. Boylestad and Louis Nashelsky,
Electronic Devices and Circuit Theory, 9th
Edition, Prentice Hall, 2006
Denton J. Dailey, Electronic Devices and
Circuits: Discrete and Integrated, Prentice
Hall, 2001