TIP35A, TIP35B, TIP35C

(NPN); TIP36A, TIP36B,

TIP36C (PNP)
Complementary Silicon
High-Power Transistors
Designed for generalpurpose power amplifier and switching
applications.
Features

25 A Collector Current
Low Leakage Current

ICEO = 1.0 mA @ 30 and 60 V

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25 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60100 VOLTS, 125 WATTS

Excellent DC Gain

hFE = 40 Typ @ 15 A

High Current Gain Bandwidth Product

hfe = 3.0 min @ IC

= 1.0 A, f = 1.0 MHz
These are PbFree Devices*

SOT93 (TO218)
CASE 340D
STYLE 1

MAXIMUM RATINGS
Rating

Symbol

TIP35A
TIP36A

TIP35B
TIP36B

TIP35C
TIP36C

Unit

Collector Emitter Voltage

VCEO

60

80

100

Vdc

Collector Base Voltage

VCB

60

80

100

Vdc

Emitter Base Voltage

VEB

Collector Current
Continuous
Peak (Note 1)

IC

5.0

IB

5.0

Total Power Dissipation

@ TC = 25_C
Derate above 25_C

PD

125

TJ, Tstg

65 to +150

Unclamped Inductive Load

ESB

Adc

25
40

Base Current Continuous

Operating and Storage

Junction Temperature Range

Vdc

Adc
W
W/_C
_C

90

mJ

Symbol

Max

Unit

Thermal Resistance,
JunctiontoCase

RqJC

1.0

C/W

JunctionToFreeAir
Thermal Resistance

RqJA

35.7

C/W

THERMAL CHARACTERISTICS
Characteristic

TO247
CASE 340L
STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO247
package. Reference FPCN# 16827.

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%.

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2012

May, 2012 Rev. 6

Publication Order Number:

TIP35/D

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)

MARKING DIAGRAMS
TO247
TO218

TIP3xx
AYWWG

AYWWG
TIP3xx

1 BASE

3 EMITTER

1 BASE

2 COLLECTOR
TIP3xx
A
Y
WW
G

3 EMITTER
2 COLLECTOR

=
=
=
=
=

Device Code
Assembly Location
Year
Work Week
PbFree Package

ORDERING INFORMATION
Device

Package

Shipping

TIP35AG

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP35BG

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP35CG

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP36AG

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP36BG

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP36CG

SOT93 (TO218)
(PbFree)

30 Units / Rail

TIP35AG

TO247
(PbFree)

30 Units / Rail

TIP35BG

TO247
(PbFree)

30 Units / Rail

TIP35CG

TO247
(PbFree)

30 Units / Rail

TIP36AG

TO247
(PbFree)

30 Units / Rail

TIP36BG

TO247
(PbFree)

30 Units / Rail

TIP36CG

TO247
(PbFree)

30 Units / Rail

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2

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

60
80
100

1.0
1.0

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (Note 2)

(IC = 30 mA, IB = 0)

CollectorEmitter Cutoff Current

(VCE = 30 V, IB = 0)
(VCE = 60 V, IB = 0)

TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C

TIP35A, TIP36A
TIP35B, TIP35C, TIP36B, TIP36C

VCEO(sus)

Vdc

ICEO

mA

CollectorEmitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ICES

0.7

mA

EmitterBase Cutoff Current

(VEB = 5.0 V, IC = 0)

IEBO

1.0

mA

25
15

75

1.8
4.0

2.0
4.0

ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 1.5 A, VCE = 4.0 V)
(IC = 15 A, VCE = 4.0 V)

hFE

CollectorEmitter Saturation Voltage

(IC = 15 A, IB = 1.5 A)
(IC = 25 A, IB = 5.0 A)

VCE(sat)

BaseEmitter On Voltage
(IC = 15 A, VCE = 4.0 V)
(IC = 25 A, VCE = 4.0 V)

VBE(on)

Vdc

Vdc

DYNAMIC CHARACTERISTICS

SmallSignal Current Gain

(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)

hfe

25

CurrentGain Bandwidth Product

(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)

fT

3.0

MHz

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

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TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)

PD, POWER DISSIPATION (WATTS)

125

100

75

50

25
0

25

50
75
125
100
TC, CASE TEMPERATURE (C)

150

175

Figure 1. Power Derating

VCC

TURNON TIME

RL
+2.0 V
0

RB

VCC

TURNOFF TIME
+9.0 V

RB
-11.0 V

10 TO 100 mS
DUTY CYCLE 2.0%

tr 20 ns

10 to 100 ms
DUTY CYCLE 2.0%
FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.

Figure 2. Switching Time Equivalent Test Circuits

2.0
TJ = 25C
IC/IB = 10
VCC = 30 V
VBE(off) = 2 V

1.0

t, TIME (s)

0.7
0.5
tr

0.2
0.1

(PNP)
(NPN)

td

0.07
0.05
0.03
0.02
0.3

0.5 0.7 1.0

5.0 7.0 10
2.0 3.0
IC, COLLECTOR CURRENT (AMPERES)

Figure 3. TurnOn Time

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4

20

30

VBB

-30 V
3.0
TO SCOPE
tr 20 ns

10

-11.0 V

0.3

RL

3.0
TO SCOPE
tr 20 ns

10

tr
20 ns

-30 V

+4.0 V

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)

1000
(PNP)
(NPN)

3.0

ts

t, TIME (s)

2.0

500
200

TJ = 25C
VCC = 30 V
IC/IB = 10
IB1 = IB2

hFE , DC CURRENT GAIN

10
7.0
5.0

ts

1.0
0.7
0.5

tf

0.3
0.2
0.1
0.3 0.5 0.7

VCE = 4.0 V
TJ = 25C

100
50
20
10
PNP
NPN

5.0

tf

2.0
1.0
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)

20

0.1

30

0.2

0.5 1.0
2.0
5.0 10
20
IC, COLLECTOR CURRENT (AMPS)

50

100

Figure 5. DC Current Gain

Figure 4. TurnOff Time

FORWARD BIAS

100
IC, COLLECTOR CURRENT (AMPS)

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC w 25_C. Second breakdown limitations do
not derate the same as thermal limitations.
For inductive loads, high voltage and high current must be
sustained simultaneously during turnoff, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent conditions during
reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives RBSOA characteristics.

TC = 25C
1.0ms

10
10ms
5.0
2.0

dc
SECONDARY BREAKDOWN
THERMAL LIMIT
BONDING WIRE LIMIT

1.0
0.5
0.3
0.2
0

REVERSE BIAS

300ms

50
30
20

TIP35A, 36A
TIP35B, 36B
TIP35C, 36C
1.0

20 30
50 70 100
2.0 3.0
5.0 7.0 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Maximum Rated Forward Bias

Safe Operating Area

IC, COLLECTOR CURRENT (AMPS)

40
TJ 100C

30
25
20

TIP35C
TIP36C

15
TIP35B
TIP36B

10
TIP35A
TIP36A

5.0
0

10

40
60
80
20
30
50
70
90
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Maximum Rated Forward Bias

Safe Operating Area

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5

100

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)

TEST CIRCUIT
VCE MONITOR

L1
(SEE NOTE A)
RBB1

MJE180

TUT
20

INPUT

L2
(SEE NOTE A)

50

RBB2 = 100

50

VCC = 10 V
+

IC MONITOR

VBB2 = 0
RS = 0.1 W

VBB1 = 10 V
+

VOLTAGE AND CURRENT WAVEFORMS

tw = 6.0 ms
(SEE NOTE B)
5.0 V
INPUT
VOLTAGE
0
100 ms

COLLECTOR
CURRENT

-3.0 A

0
-10 V

COLLECTOR
VOLTAGE

V(BR)CER
NOTES:
A. L1 and L2 are 10 mH, 0.11 W, Chicago Standard Transformer Corporation C2688, or equivalent.
B. Input pulse width is increased until ICM = 3.0 A.
C. For NPN, reverse all polarities.

Figure 8. Inductive Load Switching

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6

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)

PACKAGE DIMENSIONS
SOT93 (TO218)
CASE 340D02
ISSUE E

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

C
Q

DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V

J
H

MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF

STYLE 1:
PIN 1.
2.
3.
4.

V
G

INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069

BASE
COLLECTOR
EMITTER
COLLECTOR

TO247
CASE 340L02
ISSUE F
T

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

E
U

L
4

Q
1

0.63 (0.025)

P
Y
K

F 2 PL

D 3 PL
0.25 (0.010)

Y Q

T B

STYLE 3:
PIN 1.
2.
3.
4.

DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W

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7

MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
BASE
COLLECTOR
EMITTER
COLLECTOR

INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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TIP35/D