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TIP31A / TIP31C

NPN Epitaxial Silicon Transistor


Features
Medium Power Linear Switching Applications
Complementary to TIP32 Series

TO-220

1.Base

2.Collector

3.Emitter

Ordering Information
Part Number

Top Mark

Package

Packing Method

TIP31A

TIP31A

TO-220 3L (Single Gauge)

Bulk

TIP31C

TIP31C

TO-220 3L (Single Gauge)

Bulk

TIP31CTU

TIP31C

TO-220 3L (Single Gauge)

Rail

Absolute Maximum Ratings


Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted.

Symbol

Parameter

Value
TIP31A

60

TIP31C

100

TIP31A

60

TIP31C

100

Unit

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

Collector Current (Pulse)

IB

Base Current

TJ

Junction Temperature

TSTG

Storage Temperature Range

2000 Fairchild Semiconductor Corporation


TIP31A / TIP31C Rev. 1.1.0

V
V

150

-65 to 150

www.fairchildsemi.com

TIP31A / TIP31C NPN Epitaxial Silicon Transistor

November 2014

Values are at TC = 25C unless otherwise noted.

Symbol
PC

Parameter

Value

Collector Dissipation (TA = 25C)

Collector Dissipation (TC = 25C)

40

Unit
W

Electrical Characteristics
Values are at TC = 25C unless otherwise noted.

Symbol
VCEO(sus)

Parameter

Collector Cut-Off Current

ICES

Collector Cut-Off Current

IEBO

Emitter Cut-Off Current

hFE

DC Current Gain(1)

VBE(on)
fT

TIP31A

Collector-Emitter Sustaining
Voltage(1)

ICEO

VCE(sat)

Conditions

Collector-Emitter Saturation
Base-Emitter On

TIP31C

IC = 30 mA, IB = 0

Min.

Max.

60

100

TIP31A

VCE = 30 V, IB = 0

0.3

TIP31C

VCE = 60 V, IB = 0

0.3

TIP31A

VCE = 60 V, VEB = 0

200

TIP31C

VCE = 100 V, VEB = 0

200

VEB = 5 V, IC = 0

Voltage(1)

Voltage(1)

Current Gain Bandwidth Product

VCE = 4 V, IC = 1 A

25

VCE = 4 V, IC = 3 A

10

Unit

mA
A
mA

50

IC = 3 A, IB = 375 mA

1.2

VCE = 4 V, IC = 3 A

1.8

VCE = 10 V, IC = 500 mA,


f = 1 MHz

3.0

MHz

Note:
1. Pulse test: pw 300 s, duty cycle 2%.

2000 Fairchild Semiconductor Corporation


TIP31A / TIP31C Rev. 1.1.0

www.fairchildsemi.com
2

TIP31A / TIP31C NPN Epitaxial Silicon Transistor

Thermal Characteristics

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

1000

hFE, DC CURRENT GAIN

VCE = 4V

100

10

1
1

10

100

1000

10000

IC/IB = 10

1000

VBE(sat)

100

VCE(sat)

10
1

10000

10

1000

10000

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 1. DC Current Gain

Figure 2. Base-Emitter Saturation Voltage and


Collector-Emitter Saturation Voltage

50

10

IC(MAX) (PULSE)

45

IC(MAX) (DC)
s
1m

PC[W], POWER DISSIPATION

100s
s
5m

IC[A], COLLECTOR CURRENT

100

TIP31 VCEO MAX.


TIP31A VCEO MAX.
TIP31B VCEO MAX.
TIP31C VCEO MAX.

30
25
20
15
10

0
0

100

25

50

75

100

125

150

175

200

TC[ C], CASE TEMPERATURE

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Safe Operating Area

2000 Fairchild Semiconductor Corporation


TIP31A / TIP31C Rev. 1.1.0

35

0.1
10

40

Figure 4. Power Derating

www.fairchildsemi.com
3

TIP31A / TIP31C NPN Epitaxial Silicon Transistor

Typical Performance Characteristics

TIP31A / TIP31C NPN Epitaxial Silicon Transistor

Physical Dimensions

Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

2000 Fairchild Semiconductor Corporation


TIP31A / TIP31C Rev. 1.1.0

www.fairchildsemi.com
4

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Datasheet contains the design specifications for product development. Specifications may change
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The datasheet is for reference information only.
Rev. I72

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